Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device includes a lead frame and a semiconductor component fixed to a predetermined position on the lead frame via a bonding material, the lead frame having at least one protrusion disposed on a side peripheral surface facing the semiconductor component.

Description

Technical Field

[0001] This invention relates to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology

[0002] As a technology related to semiconductor devices and methods of manufacturing semiconductor devices, there is the technology disclosed in Patent Document 1. Patent Document 1 describes a method of "bonding a semiconductor chip to a chip pad by fitting a protrusion of a chip pad provided on a lead frame with a recess provided on the back side of the semiconductor chip", thereby "making it possible to accurately mount the semiconductor chip at a predetermined position on the chip pad and fix it directly".

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 03-284857 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] However, in the technology of the aforementioned Patent Document 1, special processing is required to provide recesses, protrusions, etc. on both sides of the lead frame and semiconductor chip, which is the main reason for the increase in the number of manufacturing steps and costs.

[0008] Therefore, the object of the present invention is to provide a semiconductor device and a method for manufacturing the same, which suppresses the increase in the number of manufacturing steps and costs, and accurately aligns and fixes the semiconductor components relative to the lead frame.

[0009] Methods for solving problems

[0010] To address the aforementioned issues, for example, the structure described in the claims may be employed.

[0011] This application includes several means of solving the above-mentioned problems. One example is a semiconductor device having a lead frame and a semiconductor component fixed to a predetermined position on the lead frame by a bonding material. The lead frame has at least one protrusion disposed on a side peripheral surface facing the semiconductor component.

[0012] Invention Effects

[0013] According to the present invention, a semiconductor device and a method thereof can be provided that suppresses the increase in the number of manufacturing steps and costs, and accurately aligns and fixes the semiconductor components relative to the lead frame. Attached Figure Description

[0014] Figure 1 This is a cross-sectional view showing the structure of the semiconductor device according to the first embodiment.

[0015] Figure 2 This is a top view showing the structure of the semiconductor device according to the first embodiment.

[0016] Figure 3 This is a perspective view showing an application example of the semiconductor device according to the first embodiment.

[0017] Figure 4 This is a top view showing a modified application example of the semiconductor device according to the first embodiment.

[0018] Figure 5 This is a process diagram (1) illustrating the manufacturing method of the semiconductor device according to the first embodiment.

[0019] Figure 6 This is a process diagram (2) illustrating the manufacturing method of the semiconductor device according to the first embodiment.

[0020] Figure 7 This is a cross-sectional view showing a modified example 1 of the semiconductor device according to the first embodiment.

[0021] Figure 8 This is a top view showing a modified example 2 of the semiconductor device according to the first embodiment.

[0022] Figure 9 This is a cross-sectional view showing a second example of a protrusion in a semiconductor device according to the first embodiment.

[0023] Figure 10 This is a cross-sectional view showing a third example of a protrusion in a semiconductor device according to the first embodiment.

[0024] Figure 11 This is a cross-sectional view showing a fourth example of a protrusion in a semiconductor device according to the first embodiment.

[0025] Figure 12 This is a cross-sectional view showing a fifth example of a protrusion in a semiconductor device according to the first embodiment.

[0026] Figure 13 This is a cross-sectional view showing a sixth example of a protrusion in a semiconductor device according to the first embodiment.

[0027] Figure 14 This is a cross-sectional view showing the structure of the semiconductor device according to the second embodiment.

[0028] Figure 15 This is a cross-sectional view showing the structure of the semiconductor device according to the third embodiment.

[0029] Figure 16This is a cross-sectional view showing the structure of the semiconductor device according to the fourth embodiment. Detailed Implementation

[0030] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, in the embodiments described below, the same reference numerals will be used to refer to the same constituent elements, and repeated descriptions will be omitted.

[0031] First Implementation Method

[0032] <Structure of Semiconductor Devices>

[0033] Figure 1 This is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment. Additionally, Figure 2 This is a top view showing the structure of the semiconductor device according to the first embodiment, corresponding to viewing from the direction of the arrow. Figure 1 The images. Figure 1 and Figure 2 The semiconductor device 1 of the first embodiment shown includes a lead frame 100 and a semiconductor component 300 fixed to a chip pad 100a of the lead frame 100 via a bonding material 200. Furthermore, only the main portion of the lead frame 100 is shown in the drawings.

[0034] Semiconductor component 300 is, for example, a structure in which a semiconductor chip 301 is sealed within a molded resin package 302, having a lower electrode 303 to which the semiconductor chip 301 is bonded and an upper electrode 304 disposed opposite to the lower electrode 303. The lower electrode 303 and the upper electrode 304 form the outer peripheral surface of the package 302, and the lower electrode 303 is bonded to the lead frame 100 by a bonding material 200.

[0035] Here, the bonding material 200 is, for example, a conductive bonding material such as solder, metal paste, metal powder, or anisotropic conductive material.

[0036] In the semiconductor device 1 with the structure described above, the lead frame 100 has at least one protrusion 101 erected facing the side peripheral surface 300a of the semiconductor component 300. Here, as an example, a structure is illustrated in which protrusions 101 are provided at two locations sandwiching the semiconductor component 300. Each protrusion 101 is composed of a portion of a slice cut from a part of the lead frame 100 erected toward the side where the semiconductor component 300 is fixed.

[0037] The protrusion 101 formed by such a slice has a shape in which the middle portion of the slice protrudes toward the side peripheral surface 300a of the semiconductor component 300 in the upright direction. Furthermore, such a protrusion 101 is preferably curved along the upright direction of the slice. In such a protrusion 101, taking into account the thickness of the bonding material 200, the height [H1] to the convex end 101a closest to the semiconductor component 300 is the height reaching the semiconductor component 300. Therefore, the semiconductor component 300 can be more accurately aligned with the protrusion 101.

[0038] Furthermore, the minimum opening width [W1] between the protrusions 101 that sandwich the semiconductor component 300 is slightly larger than the width [W3] of the semiconductor component 300, allowing it to slide freely up and down between the protrusions 101. Therefore, in the manufacture of the semiconductor device described later, when the bonding material 200 is fluidized by heat treatment, for example, when the solder of the bonding material is reflowed, the semiconductor component 300 can be recessed into the lead frame 100 side.

[0039] Furthermore, the protrusion 101 of this shape has a shape that separates from the side peripheral surface 300a of the semiconductor component 300 from the convex end 101a toward the front end side of the protrusion 101. Therefore, in the manufacture of the semiconductor device described later, it is easy to fit the semiconductor component 300 between the two protrusions 101. Moreover, even when the lead frame 100 has only one protrusion 101, the shape of the protrusion 101 makes it easy to position the semiconductor component 300 adjacent to the protrusion 101.

[0040] Furthermore, the lead frame 100 has a hole 100b formed by cutting a slice. Here, the slice constituting the protrusion 101 is a portion of the lead frame 100 formed by cutting from near the periphery of the semiconductor component 300 in a direction overlapping with the semiconductor component 300 when viewed from above. The cut slice faces outward from the semiconductor component 300 and stands upright in a direction away from the semiconductor component 300, forming the protrusion 101. Therefore, the hole 100b formed by cutting the slice is provided at a position that overlaps with the peripheral edge of the semiconductor component 300 when viewed from above. Such a hole 100b is preferably shaped to overlap with the edge of the lower electrode 303 of the semiconductor component 300 when viewed from above. As a result, the wettability and spread of the bonding material 200 relative to the lower electrode 303 can be easily confirmed.

[0041] In addition, considering the dissipation of heat from the semiconductor component 300 from the lead frame 100, the width of the slice constituting the protrusion 101 along the direction of the semiconductor component 300 is preferably smaller.

[0042] Figure 3This is a perspective view showing an application example of the semiconductor device 1 according to the first embodiment, which is equivalent to an exploded view of the semiconductor device 1. Furthermore, the previously shown... Figure 1 as well as Figure 2 It also means Figure 3 A diagram showing the main parts of the semiconductor device 1.

[0043] like Figure 3 As shown, the semiconductor device 1 has a plurality of (e.g., four) electrically independent lead frames 100, and a plurality of semiconductor components 300 are fixed to several (e.g., two) of the lead frames 100. The fixing state of the semiconductor components 300 relative to the lead frames 100 is as follows: Figure 1 and Figure 2 As explained, the bonding material 200 (omitted in the illustration) is used for fixing. In addition, the lead frame 100 has a protrusion 101 that is erected facing the side peripheral surface 300a of each semiconductor component 300, and each semiconductor component 300 is held by the protrusion 101.

[0044] The semiconductor components 300 fixed to each lead frame 100 and the selected lead frame 100 are connected by a conductive clamp 400 and sealed by a molded resin encapsulation body (not shown here). Furthermore, each lead frame 100 has an external lead 100c extending outward from the encapsulation body, at which it is connected to the wiring of the mounting substrate.

[0045] Figure 4 This is a top view showing a variation of an application example of the semiconductor device 1' according to the first embodiment. The semiconductor device 1' shown in this figure is... Figure 3 The semiconductor device 1 shown differs only in the arrangement of the protrusion 101; all other aspects are the same. For example... Figure 3 as well as Figure 4 As shown, the direction in which the semiconductor component 300 is clamped is not limited by the protrusion 101; an appropriate direction can be selected based on the layout of each semiconductor device 1, 1'. Furthermore, in Figure 4 In the middle, the following was omitted. Figure 3 The illustration shows a clamp 400, which is a molded resin encapsulation 500 that seals multiple lead frames 100.

[0046] <Methods for Manufacturing Semiconductor Devices>

[0047] Figure 5 as well as Figure 6 These are process diagrams (1) and (2) illustrating the manufacturing method of the semiconductor device according to the first embodiment. Hereinafter, according to... Figure 5 as well as Figure 6 The order shown illustrates Figures 1-4 The method for manufacturing the semiconductor device shown.

[0048] First of all, Figure 5 In the first step (1) shown, lead frame material 100' is prepared, and bonding material 200 is disposed in the area corresponding to chip pad 100a. The placement of bonding material 200 is performed, for example, by coating. Then, in the second step (2), a protrusion 101 is formed next to the bonding material 200, for example, at a position where the bonding material 200 is sandwiched. The protrusion 101 is formed by cutting a portion of lead frame material 100', punching the cut slice from the opposite side of the bonding material 200 and erecting it towards the bonding material 200 side, and then bending or folding the slice into a desired shape as needed. Thus, the preparation of lead frame 100 with protrusion 101 next to bonding material 200 disposed on chip pad 100a is completed. In addition, the step of cutting lead frame material 100' can also be performed simultaneously with the step of cutting lead frame material 100' into the shape of lead frame. Alternatively, the arrangement of bonding material 200 on the chip pad 100a of lead frame 100 can also be implemented after the protrusion 101 is formed, as long as it is implemented in a process appropriately selected according to the material of bonding material 200.

[0049] In the next third step (3), the semiconductor component 300 is aligned relative to the lead frame 100. Here, alignment is performed such that the semiconductor component 300 overlaps with the bonding material 200 and the side peripheral surface 300a of the semiconductor component 300 abuts against the protrusion 101. At this time, if the protrusion 101 is disposed on both sides of the bonding material 200, the semiconductor component 300 only needs to be disposed between the two protrusions 101, so alignment is easy. In addition, since the protrusion 101 has a shape that is spaced apart from the side peripheral surface 300a of the semiconductor component 300 toward the front end, the front end of the protrusion 101 is not stuck by the semiconductor component 300, and the semiconductor component 300 can be easily guided between the protrusions 101.

[0050] Next, in Figure 6 In the fourth process (4) shown, a semiconductor component 300 is placed on the chip pad 100a of the lead frame 100 via a bonding material 200. In this state, the semiconductor component 300 is arranged between the protrusions 101. Therefore, for example, by pressing the semiconductor component 300 with the protrusions 101, it is possible to prevent the semiconductor component 300 from falling off during transport before fixing it. In addition, as shown, if the protrusions 101 have a shape that protrudes towards the side peripheral surface 300a of the semiconductor component 300 in the upright direction of the slice, the semiconductor component 300 can be pressed with the protruding middle portion, thus preventing damage to the semiconductor component 300 at the tip of the slice.

[0051] Subsequently, by heat treating the bonding material 200, the semiconductor component 300 is fixed to the chip pad 100a of the lead frame 100. Thus, a... Figure 1 The semiconductor device 1 shown. In this heat treatment, when the bonding material 200 softens or melts and flows, the lower electrode 303 of the semiconductor component 300 is covered by the bonding material 200. At this time, if the hole 100b has a shape that overlaps with the end edge of the lower electrode 303 of the semiconductor component 300 when viewed from above, it can be easily confirmed that the lower electrode 303 is covered by the bonding material 200 as described above. On the other hand, if there is a problem with the wettability and spread of the bonding material 200 relative to the lower electrode 303, or if the amount of bonding material 200 is small, it is possible to confirm the exposure of the end edge of the lower electrode 303 in the hole 100b.

[0052] <Effects of the First Implementation Method>

[0053] The semiconductor device 1 of the first embodiment described above has a configuration in which the lead frame 100 has a protrusion 101 facing the side peripheral surface 300a of the semiconductor component 300. Therefore, without performing special processing on the semiconductor component 300, a semiconductor device 1 in which the semiconductor component 300 is accurately aligned with the lead frame 100 can be provided. Thus, compared to a semiconductor device in which the semiconductor component 300 also undergoes alignment processing, the semiconductor device 1 can be provided with fewer processing steps and at a lower cost.

[0054] <Variation Example 1>

[0055] The semiconductor device 1 of the first embodiment described above can be illustrated by the following variations. Figure 7 This is a cross-sectional view showing a modified example 1 of the semiconductor device according to the first embodiment. Figure 7 In the semiconductor device 1” shown, the semiconductor component 300' is not encapsulated in a molded resin package, but is made of a semiconductor chip. Even with such a semiconductor device 1”, the same effect can be achieved.

[0056] <Variation Example 2>

[0057] in addition, Figure 8 These are top views illustrating a modified example 2 of the semiconductor device according to the first embodiment. As shown in these figures, the protrusions 101 of the lead frame 100 are configured in various ways relative to the side peripheral surface of the semiconductor component 300. For example, semiconductor device 1a, which is an example of the first embodiment described above, is an example in which the protrusions 101 of the lead frame 100 are configured in such a way that the semiconductor component 300 is clamped from two directions.

[0058] Furthermore, the semiconductor device 1b is an example in which the protrusion 101 of the lead frame 100 is arranged to clamp the semiconductor component 300 from four directions. With such a semiconductor device 1b, the semiconductor component 300 can be aligned with the lead frame 100 in two directions in the planar direction. Additionally, in the manufacture of this semiconductor device 1b, when the bonding material 200 (see reference...) is... Figure 6 Before the reflow process, it can prevent the semiconductor component 300, which is placed on the lead frame 100 via bonding material 200, from falling off in four directions.

[0059] Furthermore, the semiconductor device 1c has a lead frame 100 with a plurality of protrusions 101 arranged on one side peripheral surface of the semiconductor component 300 facing one direction. The illustrated semiconductor device 1c illustrates a structure with two protrusions 101 arranged on one side peripheral surface of the semiconductor component 300, but three or more protrusions 101 may also be arranged. In this case, it is preferable to arrange the protrusions 101 at a separated position on one side peripheral surface. As a result, tilting of the rotational direction of the semiconductor component 300 can be prevented during the alignment of the semiconductor component 300 with respect to the lead frame 100. In addition, in this case, it is also preferable to arrange the protrusions 101 at the position where the semiconductor component 300 is clamped.

[0060] Furthermore, the semiconductor device 1d includes a semiconductor component 300 having a rectangular shape in a plan view. In this case, the protrusion 101 is preferably provided at a position that clamps the semiconductor component 300 in the middle on the short side of the rectangular shape of the semiconductor component 300. This prevents tilting of the rotational direction of the semiconductor component 300 during alignment with the lead frame 100. Furthermore, the above-described modifications 2 can also be applied to the above-described modification 1, and the same applies when using a semiconductor component 300' made of a semiconductor chip.

[0061] <Example of the shape of a protrusion in a semiconductor device>

[0062] Figures 9-13 These are cross-sectional views showing the second to sixth examples of the protrusions in the semiconductor device according to the first embodiment. Hereinafter, based on... Figures 9-13 An example of the shape of the protrusion in the semiconductor device of the first embodiment will be described.

[0063] Figure 9 The protrusion 102 shown is Figure 1 The difference in the protrusion 101 shown is that the slice constituting the protrusion 102 is bent at the middle in the standing direction from the lead frame 100, but the other structures are the same. Even with this structure, the same effects as in the first embodiment can be obtained.

[0064] like Figure 10 As shown, the protrusion 103 can also be a structure in which a slice formed by cutting a portion of the lead frame 100 stands upright approximately vertically from the lead frame 100. Additionally, as... Figure 11 As shown, the protrusion 104 can also be formed by cutting a portion of the lead frame 100 into a slice that stands upright relative to the lead frame 100 at an obtuse angle θ1. Figure 10 and Figure 11 In any of the structures shown, when the protrusions 103 and 1045 are configured to hold the semiconductor component 300, the minimum width [W1] between the protrusions 103 or between the protrusions 104 is set taking into account the width [W3] of the semiconductor component 300. Thus, the semiconductor component 300 can be aligned with the lead frame 100 without requiring special processing of the semiconductor component 300.

[0065] And, as Figure 12 As shown, the protrusion 105 can also be formed by cutting a portion of the lead frame 100 and erecting it at an acute angle θ2 relative to the lead frame 100. In such a structure, when the protrusion 105 is arranged to hold the semiconductor component 300, the minimum width [W1] between the protrusions 105 is set in a way that does not obstruct the fixing of the lead frame 100 and the semiconductor component 300 via the bonding material 200. Even with a protrusion 105 of this shape, the semiconductor component 300 can be aligned with the lead frame 100 without special processing of the semiconductor component 300.

[0066] In addition, such as Figure 13 As shown, the semiconductor component 300 can also be disposed between protrusions 101 and 103 of different shapes. The protrusions 101 and 103 of different shapes can also be replaced with... Figures 9-12 Any one of the protrusions 102 to 105 shown. Even with this structure, the semiconductor component 300 can be aligned with the lead frame 100 without special processing. Furthermore, in this case, by using a protrusion 101 (or protrusion 102) having a shape that faces the front end and is spaced apart from the side peripheral surface 300a of the semiconductor component 300, it is also possible to easily guide the semiconductor component 300 between the protrusions 101 when aligning the semiconductor component 300 with the lead frame 100.

[0067] Furthermore, the shapes of the protrusions described above can also be applied to the aforementioned modified example 1. Figure 7 ) and variation example 2 ( Figure 8 ).

[0068] Second Implementation Method

[0069] Figure 14This is a cross-sectional view showing the structure of the semiconductor device 2 according to the second embodiment. The semiconductor device 2 shown in this figure differs from the semiconductor device 1 of the first embodiment in that the cutting direction of the slice constituting the protrusion 101' and the arrangement position of the hole 100b' formed therefrom are the same in other structures.

[0070] That is, the slice constituting the protrusion 101' is a portion formed by cutting the lead frame 100 from near the periphery of the semiconductor component 300 towards the outside of the semiconductor component 300 when viewed from above. The cut slice stands upright in the direction close to the semiconductor component 300, forming the protrusion 101'. Therefore, the hole 100b' formed by cutting the slice does not overlap with the semiconductor component 300 in the plan view and is provided on the outside of the semiconductor component 300.

[0071] The manufacturing method of the semiconductor device 2 in the second embodiment of such a structure applies the same steps as the manufacturing method of the semiconductor device 1 in the first embodiment.

[0072] Even a semiconductor device 2 with the structure described above can achieve the same effect as the semiconductor device 1 of the first embodiment. However, since the hole 100b' does not overlap with the semiconductor component 300 when viewed from above, it is impossible to confirm the wetting and spreading properties of the bonding material 200 relative to the lower electrode 303 from the hole 100b'.

[0073] Furthermore, this second embodiment can also be applied in the same way to the variation 1 of the first embodiment described above ( Figure 7 ), Variation Example 2 ( Figure 8 ) and examples of the various shapes of the protrusions ( Figures 9-13 ).

[0074] Third Implementation Method

[0075] Figure 15 This is a cross-sectional view showing the structure of the semiconductor device 3 according to the third embodiment. The semiconductor device 3 shown in this figure is a structure combining the first and second embodiments. That is, the semiconductor device 3 has a protrusion 101 formed by cutting the lead frame 100 from near the periphery of the semiconductor component 300 in a direction overlapping with the semiconductor component 300 when viewed from above, and a protrusion 101' formed by cutting the lead frame 100 in a direction outward from the semiconductor component 300. The structure of each protrusion 101, 101' is the same as in the embodiment described above.

[0076] The manufacturing method of the semiconductor device 3 in the third embodiment of such a structure applies the same steps as the manufacturing method of the semiconductor device 1 in the first embodiment.

[0077] Even a semiconductor device 3 with the structure described above can achieve the same effect as the semiconductor device 1 of the first embodiment.

[0078] Furthermore, this third embodiment can also be applied in the same way to the variation 1 of the first embodiment described above ( Figure 7 ), Variation Example 2 ( Figure 8 ) and examples of the various shapes of the protrusions ( Figures 9-13 ).

[0079] Fourth Implementation Method

[0080] Figure 16 This is a cross-sectional view showing the structure of the semiconductor device 4 according to the fourth embodiment. The semiconductor device 4 shown in this figure differs from the semiconductor device 1 of the first embodiment in that a protrusion 110 is formed by partial deformation of the lead frame 100, and the lead frame 100 does not have a hole accompanying the formation of the protrusion 110. The protrusion 110 is provided facing the side peripheral surface of the semiconductor component 300, which is the same as in other embodiments.

[0081] The manufacturing method of the semiconductor device 4 in the fourth embodiment of this structure, except for the process of forming the protrusion 110, applies the same steps as the manufacturing method of the semiconductor device 1 in the first embodiment.

[0082] Even with such a structure, the semiconductor device 4 can be aligned with the lead frame 100 without special processing of the semiconductor component 300.

[0083] Furthermore, in this fourth embodiment, the protrusion 110 is formed by a partial deformation of the lead frame 100. However, the protrusion 110 may also be fixed to the lead frame 100. Additionally, this fourth embodiment can also be applied in the same way to the variation 1 of the first embodiment described above (…). Figure 7 ), Variation Example 2 ( Figure 8 ) and examples of the various shapes of the protrusions ( Figures 9-13 ).

[0084] Furthermore, the present invention is not limited to the embodiments and modifications described above, but also includes various modifications. For example, the embodiments described above are examples that have been explained in detail for the purpose of easily understanding the present invention, and are not necessarily limited to having all the structures described. In addition, a part of the structure of a certain embodiment can be replaced with the structure of another embodiment, and it is also possible to add the structure of another embodiment to the structure of a certain embodiment.

[0085] Furthermore, regarding a portion of the structure of each embodiment, other structures can be added, deleted, or replaced.

[0086] Symbol Explanation

[0087] 1, 1', 1" 1a~1d, 2~4: Semiconductor device, 100: Lead frame, 100a: Chip pad, 100b, 100b': Hole, 101, 101', 102~105: Protrusion (slice), 110: Protrusion, 200: Bonding material, 300, 30': Semiconductor component, 300a: Side peripheral surface, 303: Lower electrode.

Claims

1. A semiconductor device comprising: a lead frame; and A semiconductor component, which is fixed to a predetermined position in the lead frame via a bonding material. The semiconductor device is characterized in that... The lead frame has at least one protrusion on its side peripheral surface facing the semiconductor component.

2. The semiconductor device according to claim 1, characterized in that, The protrusion is formed by a slice made by cutting a portion of the lead frame and standing it up toward the side where the semiconductor component is fixed.

3. The semiconductor device according to claim 2, characterized in that, The protrusion has a shape in which the middle portion of the slice protrudes toward the peripheral side of the semiconductor component in the upright direction.

4. The semiconductor device according to claim 2, characterized in that, The slice is positioned facing outwards from the semiconductor component. The lead frame has a hole formed by cutting the slice at the position where it overlaps with the semiconductor component when viewed from above.

5. The semiconductor device according to claim 4, characterized in that, The semiconductor component has electrodes on the surface opposite to the lead frame. The edge of the electrode is configured to overlap with the hole when viewed from above.

6. The semiconductor device according to claim 1, characterized in that, The protrusion is positioned at the location where the semiconductor component is clamped.

7. The semiconductor device according to claim 1, characterized in that, The protrusion has a shape that is separated from the side peripheral surface of the semiconductor component, facing the front end.

8. The semiconductor device according to claim 1, characterized in that, The semiconductor component has a rectangular shape when viewed from above. The protrusion is positioned on the short side of the rectangular shape of the semiconductor component, at a location that clamps the semiconductor component.

9. The semiconductor device according to claim 1, characterized in that, A plurality of semiconductor components are fixed on the lead frame via the bonding material. The protrusions are respectively positioned facing the side peripheral surfaces of the plurality of semiconductor components.

10. A method for manufacturing a semiconductor device, characterized in that, Prepare a lead frame with protrusions next to the bonding material placed on the chip pads. With the semiconductor component aligned relative to the lead frame in such a manner that the semiconductor component overlaps with the bonding material and the side peripheral surface of the semiconductor component abuts against the protrusion, the semiconductor component is placed on the lead frame via the bonding material. The semiconductor component is fixed to the lead frame by heat treatment of the bonding material.

Images