Semiconductor element and semiconductor device
By employing multi-layer contact layers and redistribution recesses in semiconductor devices, the contact area is increased, solving the problem of high resistance values in conductive paths in existing technologies, thereby reducing resistance values and improving connection stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ROHM CO LTD
- Filing Date
- 2024-12-17
- Publication Date
- 2026-07-31
AI Technical Summary
In existing semiconductor devices, the small contact area between Cu redistribution wiring and pad terminals leads to an increase in the resistance value of the conductive path.
In semiconductor devices, a multilayer contact layer structure is adopted, including a first contact layer, a second contact layer and terminals. The terminals overlap with the contact layers in a first direction, and the contact area is increased by the recessed design of the rewiring. Combined with the anchoring effect of the polyimide protective film, the connection is ensured to be stable.
It effectively reduces the resistance value of the conductive path from the electrode to the terminal, while improving the stability of the connection and the resistance to thermal stress, and reducing the risk of cracking of the protective film.
Smart Images
Figure CN122498294A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a semiconductor element and a semiconductor device incorporating the semiconductor element. Background Technology
[0002] Patent Document 1 discloses an example of a semiconductor element (a semiconductor device in Patent Document 1). This semiconductor element includes: a substrate having an element forming surface; pad terminals disposed on the element forming surface; Cu redistribution wiring extending from the pad terminals; an organic coating covering the Cu redistribution wiring; a resin film covering the organic coating; and external connection terminals electrically connected to the Cu redistribution wiring. The surface of the Cu redistribution wiring includes a roughened surface. The organic coating is in contact with the roughened surface. By employing this structure, an anchoring effect is exhibited in the organic coating for the Cu redistribution wiring. Furthermore, since the organic coating has a strong affinity for the resin film, the adhesion of the resin film to the organic coating becomes stronger. Therefore, peeling of the resin film from the Cu redistribution layer can be suppressed.
[0003] In the semiconductor device disclosed in Patent Document 1, the Cu redistribution wiring is electrically connected to the pad terminals. If the contact area of the Cu redistribution wiring relative to the pad terminals is relatively small, there is a concern that the resistance value of the conductive path from the pad terminals to the external connection terminals may increase.
[0004] Existing technical documents
[0005] Patent documents
[0006] Patent Document 1: Japanese Patent Application Publication No. 2014-165335 Summary of the Invention
[0007] One objective of this disclosure is to provide an improved semiconductor device compared to previous implementations. In particular, in view of the above, one objective of this disclosure is to provide a semiconductor element capable of reducing the resistance value of the conductive path from the electrode to the terminal.
[0008] A semiconductor element provided by a first aspect of this disclosure includes: a body comprising a semiconductor layer; an electrode conductive to the semiconductor layer; a first contact layer and a second contact layer conductive to the electrode; and a terminal conductive to the first contact layer and the second contact layer. The electrode is located on one side of the body in a first direction. The terminal is located on the side opposite to the electrode in the first direction, with reference to the first contact layer. The first contact layer and the second contact layer are separated from each other in a direction orthogonal to the first direction. When viewed in the first direction, the terminal overlaps with both the first contact layer and the second contact layer.
[0009] The semiconductor device provided by the second aspect of this disclosure includes a semiconductor element provided by the first aspect of this disclosure and a substrate including a conductive portion. The semiconductor element is mounted on the substrate. The terminals are electrically connected to the conductive portion.
[0010] Other features and advantages of this disclosure will become more apparent from the following detailed description based on the accompanying drawings. Attached Figure Description
[0011] Figure 1 This is a partially enlarged top view of a semiconductor device according to the first embodiment of the present disclosure, showing the second protective film, the third protective film, the terminal, and the bonding layer.
[0012] Figure 2 It is along Figure 1 A sectional view along line II-II.
[0013] Figure 3 It is equipped with Figure 1 A cross-sectional view of a semiconductor device showing semiconductor elements.
[0014] Figure 4 This is a partially enlarged top view of a semiconductor device according to the second embodiment of the present disclosure, showing the second protective film, the third protective film, the terminal, and the bonding layer.
[0015] Figure 5 It is along Figure 4 A cross-sectional view of the VV line.
[0016] Figure 6 This is a partially enlarged top view of a semiconductor device according to the third embodiment of this disclosure, showing the second protective film, the third protective film, the terminal, and the bonding layer.
[0017] Figure 7 This is a partially enlarged top view of a semiconductor device according to the fourth embodiment of the present disclosure, showing the second protective film, the third protective film, the rewiring, multiple contact layers, terminals, and bonding layers.
[0018] Figure 8 This is a partially enlarged cross-sectional view of a semiconductor device according to the fifth embodiment of this disclosure. Detailed Implementation
[0019] The details of this disclosure are described with reference to the accompanying drawings.
[0020] First implementation method:
[0021] based on Figure 1 and Figure 2The semiconductor element A10 according to the first embodiment of this disclosure will be described below. The semiconductor element A10 is an LSI (Large Scale Integration) or similar device, referred to as a Wafer Level-Chip Size Package (WL-CSP). The semiconductor element A10 includes a body 11, electrodes 12, a first protective film 20, a second protective film 31, a third protective film 32, redistribution 41, multiple contact layers 42, terminals 50, and a bonding layer 60. Here, for ease of understanding... Figure 1 Through the second protective film 31, the third protective film 32, the terminal 50, and the bonding layer 60. In Figure 1 In the diagram, the third protective film 32 and the terminal 50 are represented by an imaginary line (double-dotted line).
[0022] In the description of semiconductor element A10 and semiconductor device B (described later), for convenience, the normal direction of the main surface 11A of the main body 11 (described later) is referred to as the "first direction z". The direction orthogonal to the first direction z is referred to as the "second direction x". The third direction y is referred to as the "third direction y" which is orthogonal to both the first direction z and the second direction x.
[0023] like Figure 2 As shown, the main body 11 includes a semiconductor substrate 111 and a semiconductor layer 112 located on one side of the semiconductor substrate 111 in a first direction z. The main body 11 has a main surface 11A facing the first direction z. The semiconductor layer 112 includes the main surface 11A. The semiconductor substrate 111 is obtained, for example, from a silicon wafer. Various semiconductor circuits such as transistors and diodes are formed on and near the main surface 11A of the semiconductor layer 112.
[0024] like Figure 2 As shown, electrode 12 is located on one side of the body 11 in the first direction z. Electrode 12 is in contact with the main surface 11A of the body 11. Electrode 12 is conductive to any of the various semiconductor circuits formed in the semiconductor layer 112. Electrode 12 contains, for example, aluminum (Al).
[0025] like Figure 2 As shown, electrode 12 has a connection surface 121. The connection surface 121 faces the same side as the main surface 11A of body 11 in the first direction z. A portion of the connection surface 121 is covered by a first protective film 20.
[0026] like Figure 2 As shown, the first protective film 20 covers the main surface 11A of the body 11 and a portion of the electrode 12. The first protective film 20 is a thin film containing silicon dioxide (SiO2) or silicon nitride (Si3N4), or a stack of these thin films.
[0027] like Figure 1 and Figure 2 As shown, the first protective film 20 has a plurality of first openings 21. The plurality of first openings 21 penetrate the first protective film 20 in the first direction z. The connection surface 121 of the electrode 12 is exposed from the plurality of first openings 21. When viewed in the first direction z, the plurality of first openings 21 are located inside the periphery of the connection surface 121.
[0028] like Figure 2 As shown, the second protective film 31 is located between the body 11 and the third protective film 32 in the first direction z. The second protective film 31 covers a portion of the electrode 12 and the first protective film 20. The second protective film 31 is an insulator containing an organic compound. The second protective film 31 is made of a material containing polyimide. The second protective film 31 includes a portion located between the first protective film 20 and the rewiring 41. The second protective film 31 is received in each of the plurality of first openings 21 of the first protective film 20 and includes a portion in contact with the first protective film 20 and the rewiring 41.
[0029] like Figure 2 As shown, the rewiring 41 is located between multiple contact layers 42 and terminals 50 in the first direction z. Figure 1 As shown, the rewiring 41 extends in the second direction x. The rewiring 41 is connected to the electrode 12 via a plurality of contact layers 42. The rewiring 41 includes a barrier layer in contact with the second protective film 31, a seed layer stacked on the barrier layer, and a plating layer stacked on the seed layer. The barrier layer comprises titanium (Ti). The seed layer and the plating layer each comprise copper (Cu).
[0030] like Figure 2 As shown, the rewiring 41 is sandwiched between the second protective film 31 and the third protective film 32. The rewiring 41 has a plurality of recesses 411. The plurality of recesses 411 are recessed from the side opposite to the third protective film 32 along a first direction z. Viewed in the first direction z, the plurality of recesses 411 overlap with the plurality of contact layers 42 respectively. The terminal 50 is recessed into the plurality of recesses 411.
[0031] like Figure 2 As shown, a plurality of contact layers 42 are located between the electrode 12 and the redistribution network 41 in the first direction z. The plurality of contact layers 42 are electrically connected to both the electrode 12 and the redistribution network 41. Thus, the redistribution network 41 and the plurality of contact layers 42 are electrically connected to the electrode 12. Each of the plurality of contact layers 42 includes a barrier layer in contact with the electrode 12 and the second protective film 31, a seed layer stacked on the barrier layer, and a plating layer stacked on the seed layer. The barrier layer comprises titanium. The seed layer and the plating layer each comprise copper.
[0032] like Figure 1 and Figure 2As shown, the plurality of contact layers 42 include a first contact layer 421 and a second contact layer 422. The first contact layer 421 and the second contact layer 422 are separated from each other in the second direction x. At least a portion of each of the first contact layer 421 and the second contact layer 422 is respectively housed in a plurality of first openings 21 of the first protective film 20.
[0033] like Figure 2 As shown, a third protective film 32 covers the second protective film 31 and the rewiring 41. The third protective film 32 is an insulator containing an organic compound. The third protective film 32 is made of a material containing polyimide. In the semiconductor device A10, the composition of the third protective film 32 is the same as that of the second protective film 31. The third protective film 32 is connected to the terminal 50. The dimension of the third protective film 32 in the first direction z is larger than that of the second protective film 31 in the first direction z. The third protective film 32 has a second opening 321. The second opening 321 penetrates the third protective film 32 in the first direction z. The rewiring 41 is exposed from the second opening 321.
[0034] like Figure 2 As shown, terminal 50 is located on the side opposite to the plurality of contact layers 42 in the first direction z, with reference to the redistribution 41. Terminal 50 is electrically connected to the redistribution 41. Thus, terminal 50 is conductive to the plurality of contact layers 42. A portion of terminal 50 is housed in the second opening 321 of the third protective film 32. Figure 1 As shown, viewed from the first direction z, terminal 50 extends outward from the second opening 321. Terminal 50 is exposed from the third protective film 32. In semiconductor element A10, a portion of terminal 50 protrudes from the third protective film 32 in the first direction z. Terminal 50 comprises copper.
[0035] like Figure 1 As shown, when viewed in the first direction z, terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. When viewed in the first direction z, the area of each of the first contact layer 421 and the second contact layer 422 is smaller than the area of terminal 50. In semiconductor device A10, when viewed in the first direction z, terminal 50 completely overlaps with each of the first contact layer 421 and the second contact layer 422.
[0036] like Figure 3 As shown, the bonding layer 60 is located on the side opposite to the rewiring 41 in the first direction z, with reference to the terminal 50. The bonding layer 60 is electrically connected to the terminal 50. The bonding layer 60 is solder. Therefore, the composition of the bonding layer 60 includes tin. The melting point of the bonding layer 60 is lower than that of the terminal 50.
[0037] Next, based on Figure 3 The semiconductor device B, which is equipped with semiconductor element A10, will be described.
[0038] like Figure 3 As shown, semiconductor device B includes a semiconductor element A10 and a substrate 71. The semiconductor element A10 is mounted on the substrate 71. The substrate 71 includes a substrate 711 and a conductive portion 712. The substrate 711 is an insulator. The conductive portion 712 includes, for example, copper. The terminals 50 of the semiconductor element A10 are electrically bonded to the conductive portion 712 via a bonding layer 60.
[0039] In semiconductor device B, substrate 71 is a wiring substrate. Alternatively, substrate 71 may consist only of conductive portions 712 serving as leads. Furthermore, substrate 71 may include external terminals located on the side opposite to the conductive portions 712, with reference to substrate 711 in the first direction z. In semiconductor device B, semiconductor element A10 may also be covered by a sealing resin such as bottom filler.
[0040] Next, the function and effect of semiconductor element A10 will be explained.
[0041] Semiconductor element A10 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are separated from each other in a direction orthogonal to a first direction z. When viewed in the first direction z, the terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. By adopting this structure, the cross-sectional area in the direction orthogonal to the first direction z in the conductive path of semiconductor element A10 from electrode 12 to terminal 50 is further increased. Therefore, according to this structure, the resistance value of the conductive path from electrode 12 to terminal 50 in semiconductor element A10 can be reduced.
[0042] Viewed in the first direction z, the areas of the first contact layer 421 and the second contact layer 422 are each smaller than the area of the terminal 50. By adopting this structure, the resistance value of the conductive path from the electrode 12 to the terminal 50 can be reduced without increasing the size of the first contact layer 421 and the second contact layer 422.
[0043] When viewed in the first direction z, terminal 50 overlaps entirely with the first contact layer 421 and the second contact layer 422. By employing this structure, the elongation of the conductive path from electrode 12 to terminal 50 can be suppressed, thus effectively reducing the resistance value of the conductive path from electrode 12 to terminal 50.
[0044] The redistribution 41 has multiple recesses 411. The terminal 50 is recessed into the multiple recesses 411. By adopting this structure, the contact area of the terminal 50 relative to the redistribution 41 is increased, thus enabling a more effective reduction in the resistance value of the conductive path from the electrode 12 to the terminal 50.
[0045] Second implementation method:
[0046] based on Figure 4 and Figure 5 The semiconductor element A20 according to the second embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to the semiconductor element A10 described above are labeled with the same reference numerals, and repeated descriptions are omitted. Here, for ease of understanding, Figure 4 Through the second protective film 31, the third protective film 32, the terminal 50, and the bonding layer 60. In Figure 4 In the middle, the third protective film 32 and the terminal 50 are represented by imaginary lines. Figure 4 Corresponding to the semiconductor element A10 Figure 1 .
[0047] In semiconductor element A20, the structure of the multiple contact layers 42 and the third protective film 32 is different from that of semiconductor element A10.
[0048] like Figure 4 and Figure 5 As shown, the plurality of contact layers 42 includes a first contact layer 421, a second contact layer 422, and a third contact layer 423. The third contact layer 423 is separated from the first contact layer 421 and the second contact layer 422 in the second direction x. The third contact layer 423 is located between the first contact layer 421 and the second contact layer 422 in the second direction x.
[0049] like Figure 4 As shown, when viewed in the first direction z, the first contact layer 421 and the second contact layer 422 extend outward from the terminal 50, respectively. When viewed in the first direction z, the terminal 50 and the third contact layer 423 completely overlap. When viewed in the first direction z, the area of the third contact layer 423 is smaller than the area of the terminal 50.
[0050] like Figure 5 As shown, the third protective film 32 is embedded in at least one of the plurality of recesses 411 of the rewiring 41.
[0051] Next, the function and effect of semiconductor element A20 will be explained.
[0052] Semiconductor element A20 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are separated from each other in a direction orthogonal to a first direction z. When viewed in the first direction z, the terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. Therefore, according to this structure, the resistance value of the conductive path from the electrode 12 to the terminal 50 can also be reduced in semiconductor element A20. Furthermore, by having a structure common to semiconductor element A10, semiconductor element A20 achieves the same functional effect as semiconductor element A10.
[0053] The semiconductor element A20 also includes a third contact layer 423. The third contact layer 423 separates from the first contact layer 421 in a direction orthogonal to the first direction z. Viewed in the first direction z, the terminal 50 overlaps with the third contact layer 423. By employing this structure, the cross-sectional area in the direction orthogonal to the first direction z in the conductive path of the semiconductor element A20 from the electrode 12 to the terminal 50 is further increased. Consequently, the resistance value of the conductive path from the electrode 12 to the terminal 50 is further reduced.
[0054] In semiconductor element A20, visible in the first direction z, the first contact layer 421 and the second contact layer 422 extend outward from the terminal 50, respectively. Even with this structure, by further increasing the sum of the contact areas of the multiple contact layers 42 relative to the electrode 12, the resistance value of the conductive path from the electrode 12 to the terminal 50 can be reduced compared to the past.
[0055] In semiconductor device A20, a third protective film 32 is embedded in at least one of the plurality of recesses 411 of the redistribution wiring 41. By employing this structure, the third protective film 32 exhibits an anchoring effect on the redistribution wiring 41. As a result, peeling of the third protective film 32 relative to the redistribution wiring 41 is suppressed.
[0056] Third implementation method:
[0057] based on Figure 6 The semiconductor element A30 according to the third embodiment of this disclosure will be described. In this figure, elements that are the same as or similar to the aforementioned semiconductor element A10 are labeled with the same reference numerals, and repeated descriptions are omitted. For ease of understanding, Figure 6 Through the second protective film 31, the third protective film 32, the terminal 50, and the bonding layer 60. In Figure 6 In the middle, the third protective film 32 and the terminal 50 are represented by imaginary lines. Figure 6 Corresponding to the semiconductor element A10 Figure 1 .
[0058] In semiconductor element A30, the structure of the plurality of contact layers 42 is different from that of semiconductor element A20 described above.
[0059] like Figure 6As shown, the plurality of contact layers 42 includes two first contact layers 421, two second contact layers 422, and two third contact layers 423. The two first contact layers 421 are separated from each other in the third direction y. The two second contact layers 422 are separated from each other in the third direction y. The two third contact layers 423 are separated from each other in the third direction y. Viewed along the first direction z, the two first contact layers 421 and the two second contact layers 422 extend outward from the terminal 50. Viewed along the first direction z, the entirety of each of the two third contact layers 423 overlaps with the terminal 50.
[0060] Next, the function and effect of semiconductor element A30 will be explained.
[0061] Semiconductor element A30 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are separated from each other in a direction orthogonal to a first direction z. When viewed in the first direction z, the terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. Therefore, according to this structure, the resistance value of the conductive path from the electrode 12 to the terminal 50 can also be reduced in semiconductor element A30. Furthermore, by having a structure common to semiconductor element A10, semiconductor element A30 achieves the same functional effect as semiconductor element A10.
[0062] Semiconductor element A30 includes two first contact layers 421, two second contact layers 422, and two third contact layers 423. By employing this structure, the cross-sectional area in the direction orthogonal to the first direction z in the conductive path of semiconductor element A30 from electrode 12 to terminal 50 is further increased compared to the case of semiconductor element A20. Consequently, the resistance value of the conductive path from electrode 12 to terminal 50 is further reduced compared to the case of semiconductor element A20.
[0063] Fourth implementation method:
[0064] based on Figure 7 The semiconductor element A40 according to the fourth embodiment of this disclosure will be described. In this figure, elements that are the same as or similar to the aforementioned semiconductor element A10 are labeled with the same reference numerals, and repeated descriptions are omitted. For ease of understanding, Figure 7 Through the second protective film 31, the third protective film 32, the rewiring 41, multiple contact layers 42, the terminal 50, and the bonding layer 60. Figure 7 The multiple contact layers 42 are represented by imaginary lines.
[0065] In semiconductor element A40, the structure of the first protective film 20 is different from that of semiconductor element A10.
[0066] like Figure 7 As shown, viewed along the first direction z, the periphery of each of the plurality of first openings 21 includes a first edge 211, a second edge 212, a third edge 213, a first connecting edge 214, and a second connecting edge 215. The first edge 211 extends in the second direction x. The second edge 212 and the third edge 213 extend in the third direction y, respectively. Therefore, the directions in which the second edge 212 and the third edge 213 extend are different from the direction in which the first edge 211 extends. The third edge 213 is located on the opposite side to the second edge 212, separated from the first edge 211. The lengths L2 and L3 of the second edge 212 and the third edge 213 are less than or equal to the length L1 of the first edge 211. In the semiconductor element A40, the lengths L2 and L3 are equal to the length L1, respectively.
[0067] like Figure 7 As shown, the first connecting edge 214 is connected to the first edge 211 and the second edge 212. The first connecting edge 214 is a curve. The radius of curvature r1 of the first connecting edge 214 is more than 20% of the length L1 of the first edge 211. When viewed in the first direction z, the first connecting edge 214 is separated from the extension of the first edge 211 and the extension of the second edge 212.
[0068] like Figure 7 As shown, the second connecting edge 215 is connected to the first edge 211 and the third edge 213. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is more than 20% of the length L1 of the first edge 211. In the semiconductor element A40, the radius of curvature r2 is equal to the radius of curvature r1 of the first connecting edge 214. When viewed in the first direction z, the second connecting edge 215 is separated from the extensions of the first edge 211 and the third edge 213.
[0069] Next, the function and effect of semiconductor element A40 will be explained.
[0070] Semiconductor element A40 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are separated from each other in a direction orthogonal to a first direction z. When viewed in the first direction z, the terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. Therefore, according to this structure, the resistance value of the conductive path from the electrode 12 to the terminal 50 can also be reduced in semiconductor element A40. Furthermore, by having a structure common to semiconductor element A10, semiconductor element A40 achieves the same functional effect as semiconductor element A10.
[0071] In semiconductor element A40, viewed along the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The second edge 212 extends in a different direction than the first edge 211. The first connecting edge 214 is curved. Here, when using semiconductor element A40, thermal stress caused by heat conducted from the body 11 to the electrode 12 acts on the first protective film 20. Therefore, by adopting this structure, the concentration of thermal stress acting on the periphery of the first opening 21 can be reduced. As a result, the generation of cracks in the first protective film 20 can be suppressed.
[0072] Based on the above structure, the length L2 of the second edge 212 is less than or equal to the length L1 of the first edge 211. The radius of curvature r1 of the first connecting edge 214 is more than 20% of the length L1. By adopting this structure, the concentration of thermal stress acting on the periphery of the first opening 21 can be effectively reduced.
[0073] Fifth implementation method:
[0074] based on Figure 8 The semiconductor element A50 according to the fifth embodiment of this disclosure will be described. In this figure, the same reference numerals are used for elements that are the same as or similar to those of the semiconductor element A10 described above, and repeated descriptions are omitted.
[0075] In semiconductor element A50, the structure of the first protective film 20 is different from that of semiconductor element A10.
[0076] like Figure 8 As shown, the first protective film 20 has a cover portion 22 covering the electrode 12. Viewed in the first direction z, the cover portion 22 overlaps entirely with the electrode 12. The cover portion 22 defines each of a plurality of first openings 21. The dimension t2 of the cover portion 22 in the first direction z is larger than the dimension t1 of the electrode 12 in the first direction z.
[0077] Next, the function and effect of semiconductor element A50 will be explained.
[0078] Semiconductor element A50 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are separated from each other in a direction orthogonal to the first direction z. When viewed in the first direction z, the terminal 50 overlaps with the first contact layer 421 and the second contact layer 422, respectively. Therefore, according to this structure, the resistance value of the conductive path from the electrode 12 to the terminal 50 can also be reduced in semiconductor element A50. Furthermore, by having a structure common to semiconductor element A10, semiconductor element A50 achieves the same functional effect as semiconductor element A10.
[0079] In the semiconductor element A50, the first protective film 20 has a cover portion 22 covering the electrode 12. Viewed in the first direction z, the cover portion 22 overlaps entirely with the electrode 12. The dimension t2 of the cover portion 22 in the first direction z is larger than the dimension t1 of the electrode 12 in the first direction z. Here, when using the semiconductor element A50, thermal stress caused by heat conducted from the body 11 to the electrode 12 acts on the first protective film 20. Therefore, by adopting this structure, the concentration of thermal stress in the cover portion 22 is reduced, thereby suppressing the generation of cracks in the first protective film 20.
[0080] This disclosure is not limited to the embodiments described. The specific structure of each part of this disclosure can be freely modified in various ways.
[0081] This disclosure includes the embodiments described in the following notes.
[0082] Appendix 1. A semiconductor device comprising:
[0083] The main body includes a semiconductor layer;
[0084] An electrode is located on one side of the body in a first direction and is in communication with the semiconductor layer;
[0085] A first contact layer and a second contact layer, which are conductive to the electrode; and
[0086] A terminal, located on the side opposite to the electrode in the first direction with reference to the first contact layer, and connected to both the first and second contact layers.
[0087] The first contact layer and the second contact layer are separated from each other in a direction orthogonal to the first direction.
[0088] When viewed in the first direction, the terminal overlaps with the first contact layer and the second contact layer, respectively.
[0089] Note 2. The semiconductor element according to Note 1, wherein,
[0090] When viewed in the first direction, the area of each of the first contact layer and the second contact layer is smaller than the area of the terminal.
[0091] Note 3. The semiconductor element according to Note 2, wherein,
[0092] When viewed in the first direction, the terminal overlaps entirely with both the first contact layer and the second contact layer.
[0093] Appendix 4. The semiconductor element according to Appendix 2, wherein,
[0094] When viewed in the first direction, the first contact layer extends outward from the terminal.
[0095] Note 5. The semiconductor element according to Note 4, wherein,
[0096] When viewed in the first direction, the second contact layer extends outward from the terminal.
[0097] Note 6. The semiconductor element according to Note 2, wherein,
[0098] It also has a third contact layer, which is conductive to the electrode.
[0099] The third contact layer separates from the first contact layer in a direction orthogonal to the first direction.
[0100] When viewed in the first direction, the terminal overlaps with the third contact layer.
[0101] When viewed in the first direction, the area of the third contact layer is smaller than the area of the terminal.
[0102] Note 7. The semiconductor element according to any one of Notes 2 to 6, wherein,
[0103] The first contact layer and the second contact layer are electrically connected to the electrode.
[0104] Note 8. The semiconductor element according to Note 7, wherein,
[0105] It also includes a first protective film, which is located on the same side as the electrode with respect to the main body, and covers a portion of the electrode and the main body.
[0106] The first protective film has a plurality of first openings extending through in the first direction and exposing the electrode.
[0107] At least a portion of each of the first contact layer and the second contact layer is housed within the plurality of first openings.
[0108] Note 9. The semiconductor device according to Note 8, wherein,
[0109] The first protective film comprises at least one of silicon dioxide and silicon nitride.
[0110] Note 10. The semiconductor element according to Note 9, wherein,
[0111] When viewed in the first direction, the periphery of each of the plurality of first openings includes a first edge and a second edge extending in a direction orthogonal to the first direction, and a first connecting edge connecting the first edge and the second edge.
[0112] The direction in which the second edge extends is different from the direction in which the first edge extends.
[0113] The first connection edge is curved.
[0114] Note 11. The semiconductor element according to Note 10, wherein,
[0115] When viewed in the first direction, the first connecting edge separates from the extension line of the first edge and the extension line of the second edge.
[0116] Note 12. The semiconductor element according to Note 11, wherein,
[0117] The length of the second edge is less than or equal to the length of the first edge.
[0118] The radius of curvature of the first connecting edge is more than 20% of the length of the first edge.
[0119] Note 13. The semiconductor element according to Note 9, wherein,
[0120] The first protective film has a covering portion that covers the electrode.
[0121] When viewed in the first direction, the entire covering overlaps with the electrode.
[0122] The dimension of the cover portion in the first direction is larger than the dimension of the electrode in the first direction.
[0123] Note 14. The semiconductor element according to Note 9 further comprises:
[0124] A second protective film, which covers the first protective film; and
[0125] Rewiring, which is located between the first contact layer and the terminal in the first direction,
[0126] The rewiring is electrically connected to the first contact layer, the second contact layer, and the terminal.
[0127] The second protective film includes a portion sandwiched between the first protective film and the rewiring.
[0128] Note 15. The semiconductor element according to Note 14, wherein,
[0129] The second protective film includes a portion housed in each of the plurality of first openings and in contact with the first protective film.
[0130] Note 16. The semiconductor element according to Note 15, wherein,
[0131] It also includes a third protective film that covers the second protective film and the rewiring.
[0132] The third protective film is connected to the terminal.
[0133] The terminal is exposed from the third protective film.
[0134] Note 17. The semiconductor element according to Note 16, wherein,
[0135] The third protective film has a second opening that extends through the first direction and exposes the rewiring.
[0136] A portion of the terminal is housed within the second opening.
[0137] Note 18. The semiconductor element according to Note 17, wherein,
[0138] A portion of the terminal protrudes from the second opening.
[0139] When viewed in the first direction, the terminal extends outward from the second opening.
[0140] Note 19. The semiconductor element according to Note 18, wherein,
[0141] It also includes a bonding layer that is electrically connected to the terminal.
[0142] The bonding layer is located on the side opposite to the rewiring, with the terminal as a reference.
[0143] The melting point of the bonding layer is lower than that of the terminal.
[0144] Appendix 20. A semiconductor device comprising:
[0145] The semiconductor element described in Appendix 7; and
[0146] Substrate, including conductive parts,
[0147] The semiconductor element is mounted on the substrate.
[0148] The terminal is electrically connected to the conductive part.
[0149] Note 21. The semiconductor element according to Note 11, wherein,
[0150] The direction in which the second edge extends is orthogonal to the direction in which the first edge extends.
[0151] Note 22. The semiconductor element according to Note 21, wherein,
[0152] When viewed along the first direction, the periphery of the first opening includes: a third edge located on the side that sandwiches the first edge in the middle and is opposite to the second edge; and a second connecting edge connected to the first edge and the third edge.
[0153] The third edge extends in the same direction as the second edge.
[0154] The second connection edge is curved.
[0155] Note 23. The semiconductor element according to Note 22, wherein,
[0156] The length of the third edge is less than or equal to the length of the first edge.
[0157] The radius of curvature of the second connecting edge is more than 20% of the length of the first edge.
[0158] Note 24. The semiconductor element according to Note 16, wherein,
[0159] The rewiring has a plurality of recesses that are recessed in the first direction from the side where the terminal is located toward the first direction.
[0160] When viewed in the first direction, the multiple recesses overlap with both the first contact layer and the second contact layer.
[0161] The terminal is recessed into the plurality of recesses.
[0162] Note 25. The semiconductor element according to Note 24, wherein,
[0163] The third protective film is embedded in any one of the plurality of recesses.
[0164] Note 26. The semiconductor element according to Note 16, wherein,
[0165] The second protective film and the third protective film each contain polyimide.
[0166] Note 27. The semiconductor element according to Note 16, wherein,
[0167] The dimension of the third protective film in the first direction is larger than the dimension of the second protective film in the first direction.
[0168] Symbol Explanation
[0169] A10~A50—Semiconductor element; B—Semiconductor device; 11—Main body; 11A—Main surface; 111—Semiconductor substrate; 112—Semiconductor layer; 12—Electrode; 121—Connection surface; 20—First protective film; 21—First opening; 211~213—First edge~Third edge; 214, 215—First connecting edge, Second connecting edge; 22—Covering portion; 31—Second protective film; 32—Third protective film; 321—Second opening; 41—Rewiring; 411—Recess; 42—Contact layer; 421~423—First contact layer~Third contact layer; 50—Terminal; 60—Bonding layer; 71—Substrate; 711—Substrate; 712—Conductive portion; z—First direction; x—Second direction; y—Third direction.
Claims
1. A semiconductor element characterized by comprising: have: The main body includes a semiconductor layer; An electrode is located on one side of the body in a first direction and is in communication with the semiconductor layer; The first contact layer and the second contact layer are in communication with the electrode; as well as A terminal, located on the side opposite to the electrode in the first direction with reference to the first contact layer, and connected to both the first and second contact layers. The first contact layer and the second contact layer are separated from each other in a direction orthogonal to the first direction. When viewed in the first direction, the terminal overlaps with the first contact layer and the second contact layer, respectively.
2. The semiconductor device according to claim 1, characterized in that, When viewed in the first direction, the area of each of the first contact layer and the second contact layer is smaller than the area of the terminal.
3. The semiconductor element according to claim 2, characterized in that, When viewed in the first direction, the terminal overlaps entirely with both the first contact layer and the second contact layer.
4. The semiconductor element according to claim 2, characterized in that, When viewed in the first direction, the first contact layer extends outward from the terminal.
5. The semiconductor element according to claim 4, characterized in that, When viewed in the first direction, the second contact layer extends outward from the terminal.
6. The semiconductor element according to claim 2, characterized in that, It also has a third contact layer, which is conductive to the electrode. The third contact layer separates from the first contact layer in a direction orthogonal to the first direction. When viewed in the first direction, the terminal overlaps with the third contact layer. When viewed in the first direction, the area of the third contact layer is smaller than the area of the terminal.
7. The semiconductor element according to any one of claims 2 to 6, characterized in that, The first contact layer and the second contact layer are electrically connected to the electrode.
8. The semiconductor element according to claim 7, characterized in that, It also includes a first protective film, which is located on the same side as the electrode with respect to the main body, and covers a portion of the electrode and the main body. The first protective film has a plurality of first openings extending through in the first direction and exposing the electrode. At least a portion of each of the first contact layer and the second contact layer is housed within the plurality of first openings.
9. The semiconductor element according to claim 8, characterized in that, The first protective film comprises at least one of silicon dioxide and silicon nitride.
10. The semiconductor element according to claim 9, characterized in that, When viewed in the first direction, the periphery of each of the plurality of first openings includes a first edge and a second edge extending in a direction orthogonal to the first direction, and a first connecting edge connecting the first edge and the second edge. The direction in which the second edge extends is different from the direction in which the first edge extends. The first connection edge is curved.
11. The semiconductor device according to claim 10, characterized in that, When viewed in the first direction, the first connecting edge separates from the extension line of the first edge and the extension line of the second edge.
12. The semiconductor device according to claim 11, characterized in that, The length of the second edge is less than or equal to the length of the first edge. The radius of curvature of the first connecting edge is more than 20% of the length of the first edge.
13. The semiconductor element according to claim 9, characterized in that, The first protective film has a covering portion that covers the electrode. When viewed in the first direction, the entire covering overlaps with the electrode. The dimension of the cover portion in the first direction is larger than the dimension of the electrode in the first direction.
14. The semiconductor element according to claim 9, characterized in that, It also has: A second protective film, which covers the first protective film; and Rewiring, which is located between the first contact layer and the terminal in the first direction, The rewiring is electrically connected to the first contact layer, the second contact layer, and the terminal. The second protective film includes a portion sandwiched between the first protective film and the rewiring.
15. The semiconductor element according to claim 14, characterized in that, The second protective film includes a portion housed in each of the plurality of first openings and in contact with the first protective film.
16. The semiconductor element according to claim 15, characterized in that, It also includes a third protective film that covers the second protective film and the rewiring. The third protective film is connected to the terminal. The terminal is exposed from the third protective film.
17. The semiconductor element according to claim 16, characterized in that, The third protective film has a second opening that extends through the first direction and exposes the rewiring. A portion of the terminal is housed within the second opening.
18. The semiconductor element according to claim 17, characterized in that, A portion of the terminal protrudes from the second opening. When viewed in the first direction, the terminal extends outward from the second opening.
19. The semiconductor element according to claim 18, characterized in that, It also includes a bonding layer that is electrically connected to the terminal. The bonding layer is located on the side opposite to the rewiring, with the terminal as a reference. The melting point of the bonding layer is lower than that of the terminal.
20. A semiconductor device, characterized in that, have: The semiconductor element as claimed in claim 7; and Substrate, including conductive parts, The semiconductor element is mounted on the substrate. The terminal is electrically connected to the conductive part.