A high-energy scintillator array cutting method and system based on visual positioning

Abstract

The application discloses a high-energy scintillator array cutting method and system based on visual positioning, relates to the technical field of scintillator array cutting, and comprises the following steps: generating a cutting path based on selected and set cutting parameters to perform array cutting on a scintillating material workpiece; performing coordinate serial number identification processing on a scintillator array structure image, and performing crack feature identification processing and quality identification processing; generating a scintillator array glue filling path based on the quality identification processing result and a cutting line spacing to perform scintillator array glue filling and packaging; performing feature identification and extraction processing on the scintillator array structure image, and performing packaging glue thickness detection and quality identification processing; based on the glue thickness quality identification processing result, scintillator array edge features and packaging glue edge feature identification and extraction processing result, generating a glue thickness cutting path and an edge glue cutting path and cutting the packaging glue; and the production quality and efficiency of the high-energy scintillator array are significantly improved.

Description

Technical Field

[0001] This invention relates to the field of scintillator array cutting technology, and in particular to a method and system for cutting high-energy scintillator arrays based on visual positioning. Background Technology

[0002] In fields such as high-energy physics experiments, nuclear medicine imaging, and radiation detection, high-energy scintillator arrays serve as core detection components, and their cutting accuracy and quality directly impact the performance of the entire detection system. Traditional scintillator array cutting methods often rely on mechanical positioning or manual experience, resulting in problems such as inaccurate cutting path planning, difficulty in efficiently inspecting and screening the cut array structure, and poor consistency in adhesive thickness and edge treatment after encapsulation. For example, during the array cutting stage, unreasonable cutting parameters or inaccurate cutting path generation can easily lead to defects such as cracks and dimensional deviations in individual scintillators. After cutting, there is a lack of rapid and accurate identification and marking methods for defective products with cracks in the array, affecting the targeting and efficiency of subsequent encapsulation. During encapsulation, the inability to dynamically adjust the encapsulation path based on the cutting line spacing and previous quality marking results may lead to adhesive waste or insufficient encapsulation. Furthermore, the lack of accurate visual positioning and feature recognition often results in uneven adhesive thickness and inconsistent edge widths after encapsulation, thus affecting the light output efficiency and structural stability of the scintillator array. These problems severely restrict the large-scale production and application performance improvement of high-energy scintillator arrays.

[0003] Therefore, a high-energy scintillator array cutting method and system based on visual positioning is needed, which effectively solves the problems of insufficient cutting accuracy, low quality inspection efficiency, inaccurate glue path planning, and poor consistency of glue treatment after encapsulation in traditional cutting methods, and significantly improves the production quality and efficiency of high-energy scintillator arrays. Summary of the Invention

[0004] To overcome the shortcomings of existing technologies, this invention provides a method and system for cutting high-energy scintillator arrays based on visual positioning. This method enables the detection of cutting quality, potting and encapsulation, and precise cutting of excess adhesive in high-energy scintillator arrays through image visual positioning, significantly improving the production quality and efficiency of high-energy scintillator arrays.

[0005] To achieve the above-mentioned objectives, the present invention adopts the following technical solution:

[0006] The first aspect of this application provides a method for cutting a high-energy scintillator array based on visual positioning, including the following steps: S101. Generate a cutting path based on the selected cutting parameters to perform array cutting on the scintillating material workpiece to obtain a scintillator array structure. S102. Perform coordinate number marking processing on the scintillator array structure image, and perform crack feature recognition processing and quality marking processing. S103. Generate the scintillator array potting path based on the quality identification processing result and the cutting line spacing, and perform scintillator array potting and encapsulation on the scintillator array structure based on the scintillator array potting path. S104. Perform edge feature recognition and extraction processing on the image of the scintillator array structure after it has been potted and encapsulated with scintillator array, and perform encapsulation adhesive thickness detection and adhesive thickness quality marking processing. S105. Based on the results of the colloid thickness quality identification processing, the scintillator array edge features and the encapsulated colloid edge feature recognition and extraction processing, generate the colloid thickness cutting path and the edge adhesive cutting path, and cut the encapsulated colloid.

[0007] Furthermore, generating a cutting path based on the selected cutting parameters to perform array cutting on the scintillator material workpiece to obtain a scintillator array structure includes the following steps: Select cutting parameters from the workpiece array cutting library, or set cutting parameters according to actual process requirements, and generate an array cutting path based on the selected cutting parameters. Cutting parameters include cutting line spacing, cutting depth and cutting speed. The cutting speed is determined based on the scintillation material workpiece to avoid excessive cutting speed that could cause cracks on the cut surface; Based on the array cutting path, the scintillating material workpiece is cut sequentially in the X-axis direction. After the X-axis cutting is completed, the scintillating material workpiece is cut sequentially in the Y-axis direction. In the process of array cutting of scintillating material workpieces, the gap width between scintillators is controlled by adjusting the diameter of the diamond wire.

[0008] Furthermore, the coordinate indexing process for the scintillator array structure image, along with crack feature recognition and quality labeling, includes the following steps: Each individual scintillator in the scintillator array structure image is labeled with a coordinate index, which is (i,j). Crack feature identification processing is performed on each individual scintillator in the scintillator array structure image; Quality labeling is performed based on the crack feature identification results; specifically, scintillators with crack features are labeled as defective products (i,j,0), and scintillators without cracks are labeled as good products (i,j,1).

[0009] Furthermore, the process of generating a scintillator array potting path based on the quality identification processing results and the cutting line spacing, and then encapsulating the scintillator array structure with potting adhesive based on the scintillator array potting path includes the following steps: Based on the quality identification processing results, scintillators with cracks and those without cracks are quickly screened out; Based on the coordinate sequence identifier of the scintillator without cracks, the X-axis cutting line spacing and the Y-axis cutting line spacing, an array potting path is generated, which includes an X-axis potting path and a Y-axis potting path. Based on the coordinate sequence of the scintillator with cracks, the X-axis tangent spacing and the Y-axis tangent spacing, an array of non-plastered paths is generated, which includes an X-axis non-plastered path and a Y-axis non-plastered path. The scintillator array structure is encapsulated using array potting path and array non-potting path.

[0010] Furthermore, the image of the scintillator array structure encapsulated with encapsulant is processed by identifying and extracting the edge features of the scintillator array and the encapsulant, and the encapsulant thickness is detected and the encapsulant thickness quality is marked, including the following steps: Image contrast adjustment processing is performed on the image signal of the scintillator array structure to highlight the edges of the scintillator and the encapsulating colloid; The edge features of the scintillator array and the encapsulated colloid are identified and extracted from the image of the scintillator array structure after image contrast adjustment. The thickness of the encapsulated colloid is detected and processed using an ultrasonic ranging unit, and the colloid thickness quality is then marked.

[0011] Furthermore, the process of detecting and marking the thickness of the encapsulating colloid using an ultrasonic ranging unit includes the following steps: If the thickness of the encapsulated colloid corresponding to the scintillator is within the standard thickness threshold range, then its colloid thickness quality is identified as (i,j,1,A). If the thickness of the encapsulated colloid corresponding to the scintillator is less than the lower limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,B). If the thickness of the encapsulated colloid corresponding to the scintillator is greater than the upper limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,C).

[0012] Furthermore, based on the results of the colloid thickness quality identification processing, the scintillator array edge features, and the encapsulated colloid edge feature recognition and extraction processing, the colloid thickness cutting path and the edge adhesive cutting path are generated, and the encapsulated colloid is cut, including the following steps: Generate colloid thickness cutting path based on colloid thickness quality labeling processing results; Based on the results of edge feature recognition and extraction of the scintillator array and the results of edge feature recognition and extraction of the encapsulating colloid, an edge adhesive cutting path is generated. The encapsulation colloid is cut based on the colloid thickness cutting path, and the encapsulation colloid is cut based on the edge adhesive cutting path to achieve the colloid edge width.

[0013] Furthermore, generating the colloid thickness cutting path based on the colloid thickness quality identification processing results includes the following steps: Scintillators with colloid thickness quality identifier (i,j,1,C) are selected (i.e. scintillators whose encapsulation colloid thickness is greater than the standard threshold range of encapsulation colloid thickness), and the difference between the colloid thickness and the standard thickness is calculated by comparing their colloid thickness with the standard thickness threshold of encapsulation colloid. The colloid thickness cutting path is generated based on the difference between the colloid thickness and the standard thickness to determine the colloid area to be cut and the cutting depth.

[0014] Furthermore, based on the results of edge feature recognition and extraction of the scintillator array and the results of edge feature recognition and extraction of the encapsulating colloid, the generation of the edge adhesive cutting path includes the following steps: The minimum width of the edge of the encapsulated colloid in the X-axis direction is used as the edge cutting width in the X-axis direction, and an edge cutting path in the X-axis direction is generated. The minimum width of the edge of the encapsulated colloid in the Y-axis direction is used as the edge cutting width in the Y-axis direction, and a cutting path for the edge width in the Y-axis direction is generated.

[0015] A second aspect of this application provides a high-energy scintillator array cutting system based on visual positioning, comprising: The first data processing unit is used to generate a cutting path based on the selected cutting parameters in order to perform array cutting on the scintillation material workpiece. The second data processing unit is used to perform coordinate sequence marking processing on the scintillator array structure image, as well as crack feature recognition processing and quality marking processing. The third data processing unit is used to generate a scintillator array potting path based on the quality identification processing result and the cutting line spacing, so as to encapsulate the scintillator array structure with scintillator array potting. The fourth data processing unit is used to perform edge feature recognition and extraction processing of the scintillator array and encapsulation glue edge features on the image of the scintillator array structure after encapsulation glue, and to perform encapsulation glue thickness detection and glue thickness quality marking processing. The fifth data processing unit is used to generate colloid thickness cutting paths and edge adhesive cutting paths to cut the encapsulated colloid based on the colloid thickness quality identification processing results, scintillator array edge features and encapsulated colloid edge feature identification and extraction processing results.

[0016] The beneficial effects of this application are as follows: By generating precise array cutting paths, it ensures that the scintillator material workpieces form a structurally regular scintillator array after cutting; by using image recognition to identify the coordinate sequence, crack features, and quality of the cut array, good and defective products can be quickly distinguished; based on the quality identification results and the cutting line spacing, a potting path is dynamically generated to achieve precise potting and encapsulation of good product areas, avoiding waste of adhesive in defective product areas; after potting, the thickness and edges of the encapsulated adhesive are comprehensively inspected and quality-identified by combining image edge feature extraction and ultrasonic thickness detection; finally, based on the detection results, adhesive thickness cutting paths and edge adhesive cutting paths are generated to perform targeted thickness cutting of ultra-thick adhesive areas and uniformly trim the adhesive edge width to ensure that the adhesive thickness of the encapsulated scintillator array is uniform and the edges are neat. The entire process is carried out through image vision positioning technology, realizing the precision and automation of cutting path planning, quality inspection, potting path generation, and adhesive cutting, effectively improving the cutting accuracy, product yield, and production efficiency of the scintillator array. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the steps of a high-energy scintillator array cutting method based on visual positioning according to the present invention. Detailed Implementation

[0019] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0020] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0021] Example 1 A method for cutting high-energy scintillator arrays based on visual localization includes the following steps: S101. Generate a cutting path based on the selected cutting parameters to perform array cutting on the scintillating material workpiece to obtain a scintillator array structure. The scintillating material workpiece to be cut is fixed on the cutting platform. A cutting path is generated based on the cutting parameters, and the cutting mechanism cuts the workpiece to obtain a scintillator array structure. Optionally, the cutting parameters can be selected from a workpiece array cutting library, or the operator can set the cutting parameters according to actual process requirements. Cutting parameters include cutting line spacing, cutting depth, and cutting speed. The cutting line spacing controls the size of individual scintillators in the scintillator array; the cutting depth ensures the cutting completely penetrates the scintillating material workpiece, avoiding uncut joints; and the cutting speed prevents excessive speed from causing cracks on the cut surface. The cutting line spacing includes X-axis and Y-axis spacing, which determine the size of individual scintillators in the scintillator array. An appropriate cutting speed is selected based on the thickness of the scintillating material workpiece to avoid excessive speed causing cracks on the cut surface; that is, the cutting speed decreases as the thickness of the scintillating material workpiece increases. Optionally, when performing array cutting on scintillating material workpieces, the gap width between scintillators (i.e., the intergranular gap width) can be controlled by adjusting the diameter of the diamond wire.

[0022] The process of generating a cutting path based on the selected cutting parameters to perform array cutting on the scintillator material workpiece and obtain a scintillator array structure includes the following steps: Select cutting parameters from the workpiece array cutting library, or set cutting parameters according to actual process requirements, and generate an array cutting path based on the selected cutting parameters. Cutting parameters include cutting line spacing, cutting depth and cutting speed. The cutting speed is determined based on the scintillation material workpiece to avoid excessive cutting speed that could cause cracks on the cut surface; Based on the array cutting path, the scintillating material workpiece is cut sequentially in the X-axis direction. After the X-axis cutting is completed, the scintillating material workpiece is cut sequentially in the Y-axis direction. In the process of array cutting of scintillating material workpieces, the gap width between scintillators is controlled by adjusting the diameter of the diamond wire.

[0023] For example, when the X-axis parameter of the cutting line spacing is set to 0.5mm and the Y-axis parameter is set to 0.8mm, the generated array cutting path will sequentially cut along the X-axis at 0.5mm intervals, and after completing the X-axis cutting, it will sequentially cut along the Y-axis at 0.8mm intervals. The final individual scintillator will be a cuboid structure with dimensions of 0.5mm × 0.8mm. The cutting depth is set to 5mm, while the thickness of the scintillator material to be cut is 4.5mm. At this depth, the cutting depth completely covers the workpiece thickness, ensuring that there are no connecting parts between the individual scintillators after cutting. The cutting speed is set to 2mm / s. This speed ensures smooth operation of the cutting mechanism, reduces thermal stress concentration caused by high-speed cutting, and thus reduces the risk of cracks appearing on the cut surface. In practice, the operator retrieves preset cutting parameter combinations from the workpiece array cutting library through a human-machine interface. For example, for a commonly used scintillator array, the library stores parameters such as 0.6mm on the X-axis, 0.7mm on the Y-axis, 4mm in cutting depth, and 1.8mm / s in cutting speed. The corresponding cutting path can be generated simply by selecting these parameters. If special process requirements arise, such as the need to customize larger individual scintillators, the operator can manually adjust the X-axis cutting line spacing to 1.0mm and the Y-axis cutting line spacing to 1.2mm. Simultaneously, the cutting depth is set to 5.5mm based on the workpiece thickness, and the cutting speed is appropriately reduced to 1.5mm / s to ensure cutting quality.

[0024] S102. Perform coordinate number marking processing on the scintillator array structure image, and perform crack feature recognition processing and quality marking processing. Image signals of the scintillator array structure are acquired through an image acquisition unit. The image is then processed by coordinate indexing, meaning each individual scintillator in the array is individually indexed as (i, j), where i represents the i-th position on the X-axis and j represents the j-th position on the Y-axis. Crack feature recognition processing is then performed on the indexed scintillator array image to identify scintillators with cracks. Based on the crack feature recognition results, quality labeling is performed, including defective and good product labeling. Scintillators with cracks are labeled as defective (i, j, 0), while those without cracks are labeled as good (i, j, 1). This quality labeling process allows for the rapid differentiation between scintillators with and without cracks.

[0025] The process of assigning coordinates to the scintillator array structure image, and then performing crack feature identification and quality labeling includes the following steps: Each individual scintillator in the scintillator array structure image is labeled with a coordinate index, which is (i,j). Crack feature identification processing is performed on each individual scintillator in the scintillator array structure image; Quality labeling is performed based on the crack feature identification results; specifically, scintillators with crack features are labeled as defective products (i,j,0), and scintillators without cracks are labeled as good products (i,j,1).

[0026] For example, an image of the scintillator array structure is acquired through an image acquisition unit, and each individual scintillator in the image is labeled with a coordinate number. For instance, the first individual scintillator in the upper left corner is labeled as (1,1), its right neighbor is labeled as (2,1), its lower neighbor is labeled as (1,2), and so on. By processing the image of the individual scintillator corresponding to each (i,j) coordinate with crack feature recognition, if a crack longer than 0.1mm is detected on the edge of the individual scintillator at position (3,4), it is labeled as a defective product as (3,4,0); while no crack is detected in the individual scintillator at position (5,2), it is labeled as a good product as (5,2,1). The quality labeling process quickly distinguishes between scintillators with cracks and those without cracks.

[0027] S103. Generate the scintillator array potting path based on the quality identification processing result and the cutting line spacing, and perform scintillator array potting and encapsulation on the scintillator array structure based on the scintillator array potting path. Based on the quality identification processing results and the cutting line spacing, a scintillator array potting path is generated. This path includes both potting and non-potting paths. The cutting line spacing includes X-axis and Y-axis cutting line spacing. Based on the quality identification processing results, scintillators with and without cracks are quickly identified. For scintillators without cracks, a potting path is generated based on the cutting line spacing, including both X-axis and Y-axis potting paths. For scintillators with cracks, a non-potting path is generated based on the cutting line spacing, also including both X-axis and Y-axis non-potting paths. By potting the scintillator array structure according to these paths, precise potting is achieved for scintillators with cracks, preventing potting and potting only those without cracks, thus reducing waste of potting material.

[0028] The following steps are involved in generating a scintillator array potting path based on the quality identification processing results and the cutting line spacing, and then encapsulating the scintillator array structure with potting material based on the scintillator array potting path: Based on the quality identification processing results, scintillators with cracks and those without cracks are quickly screened out; Based on the coordinate sequence identifier of the scintillator without cracks, the X-axis cutting line spacing and the Y-axis cutting line spacing, an array potting path is generated, which includes an X-axis potting path and a Y-axis potting path. Based on the coordinate sequence of the scintillator with cracks, the X-axis tangent spacing and the Y-axis tangent spacing, an array of non-plastered paths is generated, which includes an X-axis non-plastered path and a Y-axis non-plastered path. The scintillator array structure is encapsulated using array potting path and array non-potting path.

[0029] For example, suppose that in a certain scintillator array structure, the quality identification results show that the individual scintillators at coordinates (2,3,0) and (4,5,0) have cracks, while the rest are good (identified as (i,j,1)). The X-axis cutting line spacing is known to be 0.5mm, and the Y-axis cutting line spacing is 0.8mm. When generating the array potting path, firstly, all good scintillators, such as (1,1,1), (1,2,1), etc., are selected. Based on the good scintillator (i,j,1), and combined with the X-axis and Y-axis cutting line spacing, the potting path for all good scintillators is determined. Then, defective scintillators are selected, and based on the defective scintillators at coordinates (2,3) and (4,5), the non-potting path for the array is determined. When performing the dispensing operation, the dispensing mechanism will strictly follow the generated array dispensing path and array non-dispensing path. When it moves to coordinates (2,3) and (4,5), the dispensing needle stops dispensing glue, thereby avoiding dispensing glue to the defective flashing bodies with quality marks at (2,3,0) and (4,5,0). This achieves precise dispensing of glue only to other good products, effectively reducing the ineffective consumption of dispensing material on defective products.

[0030] S104. Perform edge feature recognition and extraction processing on the image of the scintillator array structure after it has been potted and encapsulated with scintillator array, and perform encapsulation adhesive thickness detection and adhesive thickness quality marking processing. Image signals of the scintillator array structure are acquired through an image acquisition unit. Image contrast adjustment is performed on the scintillator array structure image to highlight the edge contours of the scintillator and the encapsulating colloid, facilitating the identification of scintillator and encapsulating colloid edge features. The contrast-adjusted scintillator array structure image then undergoes edge feature extraction and identification processing to identify the edge features of the scintillator array and the encapsulating colloid, enabling precise cutting of excess colloid. It should be noted that because the scintillator and the encapsulating colloid have color differences (e.g., the scintillator is yellow, and the encapsulating colloid is white), image contrast adjustment can be used to identify the edge features of the scintillator array structure image. Optionally, the thickness of the encapsulating colloid can be detected using an ultrasonic ranging unit to identify areas where the encapsulating colloid thickness is too thick or too thin, and colloid thickness quality marking processing can be performed to quickly screen whether the encapsulating colloid thickness of the scintillator is too thick or too thin. Colloidal thickness quality labeling includes labels indicating that the colloidal thickness meets the standard, that the colloidal thickness does not meet the standard, and that the colloidal thickness is too thick.

[0031] The process of identifying and extracting edge features of the scintillator array and the encapsulating adhesive from an image of a scintillator array structure encapsulated with adhesive, and then performing adhesive thickness detection and quality labeling, includes the following steps: Image contrast adjustment processing is performed on the image signal of the scintillator array structure to highlight the edges of the scintillator and the encapsulating colloid; The edge features of the scintillator array and the encapsulated colloid are identified and extracted from the image of the scintillator array structure after image contrast adjustment. The thickness of the encapsulated colloid is detected and processed using an ultrasonic ranging unit, and the colloid thickness quality is then marked.

[0032] The process of detecting and marking the thickness of the encapsulating colloid using an ultrasonic ranging unit includes the following steps: If the thickness of the encapsulated colloid corresponding to the scintillator is within the standard thickness threshold range, then its colloid thickness quality is identified as (i,j,1,A). If the thickness of the encapsulated colloid corresponding to the scintillator is less than the lower limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,B). If the thickness of the encapsulated colloid corresponding to the scintillator is greater than the upper limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,C).

[0033] For example, an image of the encapsulated scintillator array structure is acquired by an image acquisition unit. Contrast adjustment is applied to the image to enhance the edges of the yellow scintillators and the white encapsulated material, which were originally blurry in color, making their boundaries clearer and more distinguishable. This facilitates the identification of the edge features of the scintillator array and the encapsulated material. An ultrasonic ranging unit is used to detect the thickness of the encapsulated material, determining the thickness of the encapsulated material corresponding to each scintillator without cracks. For example, for a good scintillator at coordinates (1,1,1), ultrasonic testing shows that the thickness of its encapsulating colloid is 0.25mm on the left edge and 0.24mm on the right edge in the X-axis direction, and 0.26mm on the upper edge and 0.25mm on the lower edge in the Y-axis direction. Based on this, the colloid thickness is determined to be uniform and within the standard range of 0.23mm-0.27mm, thus it is marked as (1,1,1,A). For a good scintillator at coordinates (3,2,1), if ultrasonic testing reveals that the colloid thickness in a certain area is only 0.18mm, below the lower limit of the standard, it is marked as (3,2,1,B). If the local thickness of the colloid in another scintillator (5,5,1) reaches 0.30mm, exceeding the upper limit of the standard, it is marked as (5,5,1,C), thereby achieving accurate detection and quality classification of the encapsulating colloid thickness.

[0034] S105. Based on the results of the colloid thickness quality identification processing, the results of the scintillator array edge feature and the results of the encapsulated colloid edge feature recognition and extraction processing, generate the colloid thickness cutting path and the edge glue cutting path and cut the encapsulated colloid. Based on the colloid thickness quality identification processing results, a colloid thickness cutting path is generated. The portion of colloid thickness exceeding the upper limit of the thickness standard threshold is cut according to this path to remove excess colloid. The edge feature recognition and extraction results of the scintillator array and the encapsulated colloid are used to generate an edge colloid cutting path. Based on this path, the colloid in the X and Y axes of the scintillator is cut to ensure smooth edge features of the encapsulated colloid. By cutting the encapsulated colloid according to both the colloid thickness cutting path and the edge colloid cutting path, dual optimization of the encapsulated colloid's thickness and edge contour is achieved, ensuring that the encapsulated colloid thickness meets the standard and the edges are neat.

[0035] Based on the results of colloid thickness quality identification processing, scintillator array edge feature recognition and extraction processing, and encapsulated colloid edge feature recognition, the following steps are taken to generate colloid thickness cutting paths and edge adhesive cutting paths and cut the encapsulated colloid: Generate colloid thickness cutting path based on colloid thickness quality labeling processing results; Based on the results of edge feature recognition and extraction of the scintillator array and the results of edge feature recognition and extraction of the encapsulating colloid, an edge adhesive cutting path is generated. The encapsulation colloid is cut based on the colloid thickness cutting path, and the encapsulation colloid is cut based on the edge adhesive cutting path to achieve the colloid edge width.

[0036] Generating the colloid thickness cutting path based on the colloid thickness quality labeling processing results includes the following steps: Scintillators with colloid thickness quality identifier (i,j,1,C) are selected (i.e. scintillators whose encapsulation colloid thickness is greater than the standard threshold range of encapsulation colloid thickness), and the difference between the colloid thickness and the standard thickness is calculated by comparing their colloid thickness with the standard thickness threshold of encapsulation colloid. The colloid thickness cutting path is generated based on the difference between the colloid thickness and the standard thickness to determine the colloid area to be cut and the cutting depth.

[0037] Based on the results of edge feature recognition and extraction of the scintillator array and the results of edge feature recognition and extraction of the encapsulating colloid, the generation of the edge adhesive cutting path includes the following steps: The minimum width of the edge of the encapsulated colloid in the X-axis direction is used as the edge cutting width in the X-axis direction, and an edge cutting path in the X-axis direction is generated. The minimum width of the edge of the encapsulated colloid in the Y-axis direction is used as the edge cutting width in the Y-axis direction, and a cutting path for the edge width in the Y-axis direction is generated.

[0038] For example, the encapsulation thickness of the scintillator array is 0.30mm, while the standard thickness threshold range is 0.23mm-0.27mm. After differential processing, the required cutting thickness is 0.03mm. Based on this, a cutting path for the encapsulation thickness of the scintillator array is generated, precisely controlling the cutting mechanism to cut to a depth of 0.03mm in the excessively thick area of ​​the encapsulation corresponding to the scintillator array. Regarding the generation of the edge adhesive cutting path, by identifying and extracting the edge features of the scintillator array and the encapsulation adhesive, assuming that the minimum edge width of all encapsulation adhesive edges in the X-axis direction is 0.3mm, the edge cutting width in the X-axis direction is set to 0.3mm, and an edge width cutting path in the X-axis direction is generated accordingly, ensuring that the edge adhesive width in the X-axis direction is uniformly 0.3mm after cutting. Similarly, if the minimum edge width of the encapsulation adhesive in the Y-axis direction is 0.4mm, the edge cutting width in the Y-axis direction is set to 0.4mm, generating an edge width cutting path in the Y-axis direction.

[0039] Example 2 The above is a high-energy scintillator array cutting method based on visual positioning provided in the embodiments of this application. The following is a high-energy scintillator array cutting system based on visual positioning provided in the embodiments of this application.

[0040] A high-energy scintillator array cutting system based on visual localization includes: The first data processing unit is used to generate a cutting path based on the selected cutting parameters in order to perform array cutting on the scintillation material workpiece. The second data processing unit is used to perform coordinate sequence marking processing on the scintillator array structure image, as well as crack feature recognition processing and quality marking processing. The third data processing unit is used to generate a scintillator array potting path based on the quality identification processing result and the cutting line spacing, so as to encapsulate the scintillator array structure with scintillator array potting. The fourth data processing unit is used to perform edge feature recognition and extraction processing of the scintillator array and encapsulation glue edge features on the image of the scintillator array structure after encapsulation glue, and to perform encapsulation glue thickness detection and glue thickness quality marking processing. The fifth data processing unit is used to generate colloid thickness cutting paths and edge adhesive cutting paths to cut the encapsulated colloid based on the colloid thickness quality identification processing results, scintillator array edge features and encapsulated colloid edge feature identification and extraction processing results.

[0041] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0042] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A method for cutting a high-energy scintillator array based on visual positioning, characterized in that, Includes the following steps: S101. Generate a cutting path based on the selected cutting parameters to perform array cutting on the scintillating material workpiece to obtain a scintillator array structure. S102. Perform coordinate number marking processing on the scintillator array structure image, and perform crack feature recognition processing and quality marking processing. S103. Generate the scintillator array potting path based on the quality identification processing result and the cutting line spacing, and perform scintillator array potting and encapsulation on the scintillator array structure based on the scintillator array potting path. S104. Perform edge feature recognition and extraction processing on the image of the scintillator array structure after it has been potted and encapsulated with scintillator array, and perform encapsulation adhesive thickness detection and adhesive thickness quality marking processing. S105. Based on the results of the colloid thickness quality identification processing, the scintillator array edge features and the encapsulated colloid edge feature recognition and extraction processing, generate the colloid thickness cutting path and the edge adhesive cutting path, and cut the encapsulated colloid.

2. The high-energy scintillator array cutting method based on visual positioning according to claim 1, characterized in that, Step S101 includes the following steps: Select cutting parameters from the workpiece array cutting library, or set cutting parameters according to actual process requirements, and generate an array cutting path based on the selected cutting parameters. Cutting parameters include cutting line spacing, cutting depth and cutting speed. The cutting speed is determined based on the scintillation material workpiece to avoid excessive cutting speed that could cause cracks on the cut surface; Based on the array cutting path, the scintillating material workpiece is cut sequentially in the X-axis direction. After the X-axis cutting is completed, the scintillating material workpiece is cut sequentially in the Y-axis direction. In the process of array cutting of scintillating material workpieces, the gap width between scintillators is controlled by adjusting the diameter of the diamond wire.

3. The high-energy scintillator array cutting method based on visual positioning according to claim 1, characterized in that, Step S102 includes the following steps: Each individual scintillator in the scintillator array structure image is labeled with a coordinate index, which is (i,j). Crack feature identification processing is performed on each individual scintillator in the scintillator array structure image; Quality labeling is performed based on the crack feature identification results; specifically, scintillators with crack features are labeled as defective products (i,j,0), and scintillators without cracks are labeled as good products (i,j,1).

4. The high-energy scintillator array cutting method based on visual positioning according to claim 1, characterized in that, Step S103 includes the following steps: Based on the quality identification processing results, scintillators with cracks and those without cracks are quickly screened out; Based on the coordinate sequence identifier of the scintillator without cracks, the X-axis cutting line spacing and the Y-axis cutting line spacing, an array potting path is generated, which includes an X-axis potting path and a Y-axis potting path. Based on the coordinate sequence of the scintillator with cracks, the X-axis tangent spacing and the Y-axis tangent spacing, an array of non-plastered paths is generated, which includes an X-axis non-plastered path and a Y-axis non-plastered path. The scintillator array structure is encapsulated using array potting path and array non-potting path.

5. The high-energy scintillator array cutting method based on visual positioning according to claim 1, characterized in that, Step S104 includes the following steps: Image contrast adjustment processing is performed on the image signal of the scintillator array structure to highlight the edges of the scintillator and the encapsulating colloid; The edge features of the scintillator array and the encapsulated colloid are identified and extracted from the image of the scintillator array structure after image contrast adjustment. The thickness of the encapsulated colloid is detected and processed using an ultrasonic ranging unit, and the colloid thickness quality is then marked.

6. The high-energy scintillator array cutting method based on visual positioning according to claim 5, characterized in that, The process of detecting and marking the thickness of the encapsulating colloid using an ultrasonic ranging unit includes the following steps: If the thickness of the encapsulated colloid corresponding to the scintillator is within the standard thickness threshold range, then its colloid thickness quality is identified as (i,j,1,A). If the thickness of the encapsulated colloid corresponding to the scintillator is less than the lower limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,B). If the thickness of the encapsulated colloid corresponding to the scintillator is greater than the upper limit of the thickness standard threshold, then its colloid thickness quality is identified as (i,j,1,C).

7. The high-energy scintillator array cutting method based on visual positioning according to claim 1, characterized in that, Step S105 includes the following steps: Generate colloid thickness cutting path based on colloid thickness quality labeling processing results; Based on the results of edge feature recognition and extraction of the scintillator array and the results of edge feature recognition and extraction of the encapsulating colloid, an edge adhesive cutting path is generated. The encapsulation colloid is cut based on the colloid thickness cutting path, and the encapsulation colloid is cut based on the edge adhesive cutting path to achieve the colloid edge width.

8. The high-energy scintillator array cutting method based on visual positioning according to claim 7, characterized in that, The process of generating the colloid thickness cutting path based on the colloid thickness quality identification processing result includes the following steps: Scintillators with colloid thickness quality identifier (i,j,1,C) are selected, and the difference between their colloid thickness and the standard thickness threshold of the encapsulated colloid is calculated. The colloid thickness cutting path is generated based on the difference between the colloid thickness and the standard thickness to determine the colloid area to be cut and the cutting depth.

9. The high-energy scintillator array cutting method based on visual positioning according to claim 7, characterized in that, The process of generating the edge adhesive cutting path based on the scintillator array edge feature recognition and extraction results and the encapsulating colloid edge feature recognition and extraction results includes the following steps: The minimum width of the edge of the encapsulated colloid in the X-axis direction is used as the edge cutting width in the X-axis direction, and an edge cutting path in the X-axis direction is generated. The minimum width of the edge of the encapsulated colloid in the Y-axis direction is used as the edge cutting width in the Y-axis direction, and a cutting path for the edge width in the Y-axis direction is generated.

10. A high-energy scintillator array cutting system based on visual positioning, used to implement the high-energy scintillator array cutting method based on visual positioning as described in any one of claims 1-9, characterized in that, include: The first data processing unit is used to generate a cutting path based on the selected cutting parameters in order to perform array cutting on the scintillation material workpiece. The second data processing unit is used to perform coordinate sequence marking processing on the scintillator array structure image, as well as crack feature recognition processing and quality marking processing. The third data processing unit is used to generate a scintillator array potting path based on the quality identification processing result and the cutting line spacing, so as to encapsulate the scintillator array structure with scintillator array potting. The fourth data processing unit is used to perform edge feature recognition and extraction processing of the scintillator array and encapsulation glue edge features on the image of the scintillator array structure after encapsulation glue, and to perform encapsulation glue thickness detection and glue thickness quality marking processing. The fifth data processing unit is used to generate colloid thickness cutting paths and edge adhesive cutting paths to cut the encapsulated colloid based on the colloid thickness quality identification processing results, scintillator array edge features and encapsulated colloid edge feature identification and extraction processing results.

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