A method for manufacturing a gas dispersion nozzle for a semiconductor process chamber

Abstract

The present application relates to the field of semiconductor wafer preparation, and particularly relates to a preparation method of a gas dispersion nozzle for a semiconductor process chamber, comprising: a first step of screening: selecting semiconductor-grade high-purity quartz sand with a purity of greater than or equal to 99.999%, and obtaining two particle sizes of 400-500 mesh and 500-600 mesh quartz sand through a vibrating screen, and taking the two particle sizes as substrates respectively. The present application prepares a dispersion ceramic head, the ceramic head is hollow inside, the top end is a cap-shaped structure, and is composed of a quartz sintered body with a pore structure inside, and the internal structure is strengthened through gradient sintering to achieve high strength. The hollow structure is beneficial to the dispersion of gas in the maximum area, and the nozzle is welded on a quartz tube, and the quartz tube can be bent into various shapes according to different equipment requirements.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wafer fabrication, specifically to a method for fabricating a gas dispersion nozzle for semiconductor process chambers. Background Technology

[0002] In the manufacturing process of semiconductor integrated circuits, wafer fabrication is a crucial step that determines device performance. Processes such as chemical vapor deposition, physical vapor deposition, etching, and oxidation all require specific reaction chambers. These processes are used to achieve purposes such as thin film deposition, pattern etching, or surface modification.

[0003] In the manufacturing process, it is often necessary to inject various gases into the reaction chamber or to break the vacuum environment of the container before opening it after the reaction. The traditional method is to directly introduce a quartz tube into the container to inject the reaction gas. In this way, the gas flow cannot be well dispersed on the wafer in the reaction chamber, causing internal turbulence and uneven coating on the wafer surface, which can easily lead to unstable product quality in the container. Although some existing nozzles have a porous sintered structure, they have low mechanical strength and are prone to shedding small particles in high-temperature environments, which cannot meet the requirements of high cleanliness and long life of semiconductors. Summary of the Invention

[0004] According to embodiments of the present invention, a method for fabricating a gas dispersion nozzle for semiconductor process chambers is provided. This addresses the problems existing in the prior art.

[0005] The method for fabricating a gas dispersing nozzle for a semiconductor process chamber includes:

[0006] The first step is screening: semiconductor-grade high-purity quartz sand with a silica purity of ≥99.999% is selected and screened by a vibrating screen to obtain two particle sizes of quartz sand: 400~500 mesh and 500~600 mesh, which are used as base materials respectively.

[0007] The second step is weighing: according to the size and specifications of the target nozzle ceramic head, the two particle sizes of quartz sand after screening are weighed quantitatively.

[0008] The third step is pure water preparation: the water is filtered through multiple media to remove silt, rust and suspended solids, activated carbon adsorption to remove residual chlorine, reverse osmosis membrane separation to remove ions, organic matter and bacteria, and then continuous desalination by electro-deionization to obtain high-purity pure water.

[0009] Step 4, pulping: The quartz sand weighed in step 2 and the high-purity water prepared in step 3 are mixed and stirred evenly according to a preset ratio to obtain quartz pulp material;

[0010] Step 5, molding: The quartz slurry obtained in step 4 is placed in a preset mold for pressure molding to obtain a cap-shaped part A;

[0011] Step 6, sintering: Place the molded part A obtained in step 5 into a heating furnace for gradient sintering;

[0012] Step 7, Strengthening: Fix the molded part A obtained in step 6, and use an oxyhydrogen flame to rotate and heat the entire molded part A, so that the quartz particles inside the ceramic head are further fused, strengthening the surface and internal structure.

[0013] Step 8, Cutting: Semiconductor-grade high-purity quartz sand with a silica purity of ≥99.999% is selected as raw material. After being formed into a tubular preform through melting and drawing processes, it is cut to a fixed length using diamond cutting technology to obtain tubular structure component B.

[0014] In the ninth step, part B obtained in the eighth step is coaxially connected with part A strengthened in the seventh step, and the two are welded together using an oxyhydrogen flame welding process to form a gas dispersion nozzle semi-finished product.

[0015] Step 10, Inspection: After flow testing, microscopic inspection, and cleaning and drying, the semi-finished gas diffusion nozzles are individually clean-packaged in a Class 1000 cleanroom.

[0016] Step 11, bending: The gas dispersion nozzle semi-finished product obtained in step 10 is bent. According to the installation requirements of downstream semiconductor equipment, hydrogen-oxygen flame heating is used in conjunction with bending mold to bend the quartz tube section of the welded quartz filter assembly to the target angle. After bending, it is cleaned to obtain a gas dispersion nozzle for semiconductor process chambers.

[0017] Preferably, the gradient sintering in the sixth step specifically includes:

[0018] First heating stage: The temperature is increased from room temperature to 750℃ at a heating rate of 15℃ / min to remove moisture from the inside of the billet;

[0019] First heat preservation stage: heat preservation at 750℃ for 1~2 hours to make the temperature inside and outside the billet uniform and the quartz particles undergo preliminary solid-phase reaction.

[0020] The second heating stage: the temperature is increased from 750℃ to 1350℃ at a heating rate of 20℃ / min, quickly crossing the medium temperature zone to avoid unnecessary crystal phase transformation and allowing the material to enter the densification sintering stage.

[0021] The second heat preservation stage: heat preservation at 1350℃ for 8~10 hours, allowing the fine quartz particles to melt and flow, and adjacent quartz particles to fuse to form a high-strength skeleton, thus completing the sintering.

[0022] Preferably, the traffic test in the tenth step specifically includes:

[0023] Connect the gas dispersion nozzle to the test pipeline, introduce high-purity nitrogen, adjust the pipeline pressure to the set value, and read the electronic flow meter reading. A flow rate ≥ 40 L / min is considered qualified, while a flow rate below this value is considered unqualified.

[0024] Preferably, the microscopic examination in the tenth step specifically includes:

[0025] Microscopic inspection is performed, and the structure is observed under 100x magnification. Defective products are removed, and qualified products are cleaned and packaged.

[0026] Preferably, the cleaning in the tenth step specifically includes:

[0027] Immerse the gas dispersing nozzle that has passed the flow test in a 10% hydrofluoric acid solution for 30 minutes.

[0028] Subsequently, the high-purity water prepared in the third step was used to ultrasonically clean the acid-washed nozzle to remove residual acid and impurities from the surface.

[0029] Preferably, the packaging in the tenth step specifically includes:

[0030] After cleaning, the gas diffusion nozzles are dried in a clean environment and then individually packaged in a Class 1000 cleanroom.

[0031] Preferably, in the first step, the mass proportion of 500-600 mesh quartz sand is 60%-70% of the total raw material mass of the ceramic head, and the mass proportion of 400-500 mesh quartz sand is 30%-40%. By using dual particle size distribution, the porosity uniformity of the sintered body is controlled.

[0032] Preferably, the 500-600 mesh quartz sand sintered in the first step can enable the ceramic head to form a diffuse pore structure with a maximum pore size ≤30μm, an average pore size of 25-30μm, and a filtration accuracy of 15-30μm.

[0033] Preferably, in step seven, the flame temperature of the hydrogen-oxygen flame heating is 1900~2200℃, the rotation speed of the rotating mechanism is 5~10 r / min, and the heating time is 3~5 min, so as to ensure surface melting and strengthening while avoiding pore structure blockage.

[0034] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0035] This invention involves preparing a dispersion ceramic head with a hollow interior and a cap-shaped top. The head is composed of a sintered quartz body with an internal porous structure, and its internal structure is strengthened through gradient sintering to achieve high strength. This hollow structure facilitates the dispersion of gas over a maximum area. The nozzle is welded to a quartz tube, which can be bent into various shapes to meet different equipment requirements.

[0036] When gas passes through the diffused ceramic head, it can form a maximum pore size of 30μm, an average pore size of 25~30μm, and a filtration accuracy of 15~30μm, achieving a ventilation rate of ≥40L / min.

[0037] When gas passes through the nozzle, it is broken into countless tiny bubbles through the tiny pores inside the dispersing ceramic head, thus achieving a dispersion effect at the outlet.

[0038] It should be understood that the description in the Summary of the Invention is not intended to limit the key or essential features of the embodiments of the present invention, nor is it intended to restrict the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0039] The above and other features, advantages, and aspects of the various embodiments of the present invention will become more apparent from the accompanying drawings and the following detailed description. In the drawings, the same or similar reference numerals denote the same or similar elements, wherein:

[0040] Figure 1 A schematic diagram of a method for fabricating a gas dispersing nozzle for a semiconductor process chamber according to the present invention is shown;

[0041] Figure 2 A schematic diagram showing the inspection of a method for fabricating a gas dispersing nozzle for a semiconductor process chamber according to the present invention is shown;

[0042] Figure 3 A microscopically enlarged schematic diagram of a gas dispersing nozzle according to the present invention is shown;

[0043] Figure 4 A schematic diagram of the connection structure between the frame and the worktable according to the present invention is shown;

[0044] Figure 5 A schematic diagram of the connection structure of the workbench according to the present invention is shown;

[0045] Figure 6 A schematic diagram of the connection structure of the adjustment component according to the present invention is shown;

[0046] Figure 7 A schematic diagram of the second-view connection structure of the adjustment component according to the present invention is shown;

[0047] Figure 8 A schematic diagram of the connection structure between the frame and the waste guide plate according to the present invention is shown;

[0048] Figure 9 A schematic diagram of the connection structure of the rotating assembly according to the present invention is shown;

[0049] Figure 10A schematic diagram of the second-view connection structure of the rotating component according to the present invention is shown;

[0050] Figure 11 A schematic diagram of the planar structure of the rotating assembly according to the present invention is shown;

[0051] Figure 12 A second-view planar structural schematic diagram of the rotating component according to the present invention is shown.

[0052] The attached figures are labeled as follows:

[0053] 1-Frame, 2-Workbench, 3-First slide, 4-Second slide, 5-Adjustment assembly, 51-Support plate, 52-First side plate, 53-Second side plate, 54-Bearing seat, 55-Rotating shaft, 56-First bevel gear, 57-Handle, 58-Lead screw, 59-Second bevel gear, 510-Slider, 511-Guide rod, 512-Sleeve block, 513-Positioning plate, 514-Outer shell, 6-Rotating assembly, 61-Cylinder, 62-First rotating shaft, 63-External gear, 64-Rotating rod, 65-Internal gear, 66-Second rotating shaft, 67-Internal rod, 68-Third rotating shaft, 69-Outer shell, 610-Placement seat, 611-Connecting rod, 612-Servo motor, 7-Frame, 8-Waste guide plate, 9-Slanted support. Detailed Implementation

[0054] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0055] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0056] Example 1

[0057] This invention provides a method for preparing a gas dispersion nozzle for semiconductor process chambers, the specific implementation process of which is as follows:

[0058] Screening: Refining and pretreatment of raw materials. Semiconductor-grade high-purity quartz sand with a silica purity of not less than 99.999% is selected as the base material and is precisely screened into two particle sizes: 400-500 mesh and 500-600 mesh, using a vibrating screen.

[0059] Of the total raw materials used in the ceramic head, 500-600 mesh quartz sand accounts for 70% and 400-500 mesh quartz sand accounts for 30%. This ratio is designed to create a high-density porous framework through a high proportion of fine particles.

[0060] Weighing: Based on the size and specifications of the target nozzle ceramic head, the two particle sizes of quartz sand after sieving are weighed quantitatively.

[0061] Pure water preparation: High-purity water with a conductivity of less than 0.1 μS / cm is prepared by multi-media filtration, activated carbon adsorption, reverse osmosis membrane separation and continuous desalination by electro-deionization. This pure water is used as a subsequent dispersion and cleaning medium to prevent metal ion contamination.

[0062] Slurry preparation: The process moves to the slurry preparation and molding stage. A measured amount of graded quartz sand and high-purity water are mixed in a specific ratio and then vacuum-stirred to form a quartz slurry with good fluidity. This slurry is then injected into a pre-designed mold for pressure molding, resulting in part A with a cap-like structure. The key to this stage is controlling the solid content and viscosity of the slurry to ensure the uniformity of the green body's density.

[0063] Molding: The quartz slurry is placed in a pre-set mold and pressure molded to obtain a cap-shaped part A.

[0064] Sintering: Multi-stage gradient sintering is performed on part A;

[0065] First heating stage: Heating from room temperature to 750℃ at a heating rate of 15℃ / min;

[0066] First heat preservation stage: heat preservation at 750℃ for 1~2 hours. This stage mainly removes the physically adsorbed water and structural water inside the billet and homogenizes the internal temperature field of the billet, inducing the initial solid-phase reaction of the quartz particles.

[0067] The second heating stage: the temperature is increased from 750℃ to 1350℃ at a heating rate of 20℃ / min. The rapid transition across the medium temperature zone aims to suppress the precipitation of harmful crystalline phases such as cristobalite, while the long-term liquid phase sintering promotes the melting and flow of fine particles.

[0068] The second heat preservation stage involves heat preservation at 1350℃ for 10 hours. This process allows the fine particles to fully melt, forming a dense and dispersed structure with a maximum pore size ≤25μm, an average pore size of 25~28μm, and a filtration accuracy of 15~20μm.

[0069] Strengthening: The sintered part A is subjected to oxyhydrogen flame rotational strengthening treatment. Part A is fixed on a rotating mechanism, with the rotation speed controlled at 5~10 r / min, the flame temperature controlled at 2000~2200℃, the rotation speed of the rotating mechanism at 8 r / min, and the heating time at 3 min. The high-temperature instantaneous heating causes the surface particles to fuse, strengthening the structure without clogging the micropores.

[0070] This process causes controlled remelting and flow on the surface of the quartz particles, which not only heals the microcracks formed during sintering but also further integrates the bonding forces between the particles. At the same time, while ensuring the interconnection of internal pores, it significantly improves the surface hardness and thermal shock resistance of the ceramic head.

[0071] Cutting: Preparation of tubular component B. Semiconductor-grade quartz sand of equal purity is selected, and a tubular preform is formed by high-temperature melting and drawing process. Then, a diamond wire cutting process is used to cut it to a fixed length to obtain a tubular structure with precise dimensions and high cross-sectional quality.

[0072] Component assembly and cleaning are performed. Using an oxyhydrogen flame welding process, component B and the reinforced component A are coaxially joined and sealed to form an integrated quartz filter assembly. Based on the three-dimensional installation requirements of downstream semiconductor equipment, a bending die combined with localized oxyhydrogen flame heating is used to bend the quartz tube section of the filter assembly to the target angle.

[0073] Inspection: Connect the finished product to the test pipeline, introduce high-purity nitrogen gas and adjust the pressure to the set value, and measure the gas flow rate. The qualified standard is a flow rate ≥ 40 L / min. Subsequently, the microstructure of the nozzle is inspected under a 100x microscope, and defective products with structural defects are rejected.

[0074] The qualified products were then immersed in a 10% hydrofluoric acid solution for 30 minutes to etch surface impurities, and then ultrasonically cleaned with the aforementioned high-purity water to remove residual acid and particles.

[0075] After cleaning, the products are dried in a clean environment and then individually vacuum-packed in a Class 1000 cleanroom to ensure that they meet the cleanliness requirements of semiconductor processes upon delivery.

[0076] Bending: The semi-finished gas dispersing nozzle is bent. According to the installation requirements of downstream semiconductor equipment, hydrogen-oxygen flame heating is used in conjunction with bending mold to bend the quartz tube section of the welded quartz filter assembly to the target angle to obtain a gas dispersing nozzle for semiconductor process chambers.

[0077] Example 2

[0078] The method for fabricating a gas dispersion nozzle for a semiconductor process chamber includes the following steps, with the following modifications based on the method disclosed in Example 1:

[0079] Screening: The raw material screening stage is the same as in Example 1, but the gradation ratio is adjusted as follows: 500-600 mesh quartz sand accounts for 60% of the total raw material mass of the ceramic head, and 400-500 mesh quartz sand accounts for 40%. The increased proportion of coarse particles is intended to form larger interconnected pores and reduce gas penetration resistance.

[0080] Slurry preparation and molding: The slurry preparation and molding steps are the same as in Example 1. During the sintering stage, the holding time is shortened to 8 hours to promote neck growth between particles and avoid excessive vitrification that could lead to pore closure.

[0081] Strengthening: During the strengthening stage, the heat input should be appropriately reduced to prevent excessive pore shrinkage. The temperature of the oxyhydrogen flame should be controlled at 1900~2000℃, the heating time at 5min, and the rotation speed at 5r / min.

[0082] Testing revealed that the ceramic head fabricated in this embodiment possesses a pore structure with a maximum pore size of 30 μm, an average pore size of 28–30 μm, and a filtration accuracy of 25–30 μm. Although the filtration accuracy is slightly relaxed, gas permeability is significantly improved, and flow rate tests show that the airflow rate can reach over 55 L / min, meeting the requirements of high-flow-rate processes.

[0083] Example 3

[0084] The method for fabricating a gas dispersion nozzle for a semiconductor process chamber includes the following steps, with the following modifications based on the method disclosed in Example 1:

[0085] Screening: The raw material screening stage is the same as in Example 1, but the gradation ratio is adjusted to: 500~600 mesh quartz sand accounts for 65% of the total raw material mass of the ceramic head, and 400~500 mesh quartz sand accounts for 35%. This ratio achieves the best balance between porosity and structural strength.

[0086] Sintering and strengthening: The process parameters are basically the same as those in Example 1, but adjustments are made in the second heat preservation stage, which is heat preservation at 1350℃ for 10 hours;

[0087] The oxyhydrogen flame temperature was set at approximately 2100℃, the rotation speed at 6 r / min, and the heating time at 4 min. These parameters effectively heal surface microcracks while maintaining the integrity of the pore structure, with a maximum pore size ≤28 μm, an average pore size of 26~29 μm, a filtration accuracy of 20~25 μm, and a stable gas flow rate of approximately 45 L / min. The nozzle prepared in this embodiment exhibits excellent thermal shock resistance and gas uniformity, representing the optimal implementation of this invention.

[0088] Table 1. Record of Experimental Results for Examples 1 to 3

[0089] Percentage of fine particles (500~600 mesh) 70% 60% 65% Coarse particle ratio (400~500 mesh) 30% 40% 35% Average aperture 25~28 μm 28~30 μm 26~29 μm Filtration accuracy 15~20 μm 25~30 μm 20~25 μm Ventilation rate (typical value) ≥40 L / min ≥55 L / min ~45 L / min Application scenarios High-precision etching and cleaning Large-area CVD, oxidation General-purpose process chamber

[0090] like Figures 1 to 12 As shown, it further includes a frame 1, a worktable 2, a first slide 3, a second slide 4, an adjustment assembly 5, a rotating assembly 6, and a slant support 9;

[0091] A worktable 2 is fixedly connected to the upper surface of the frame 1. An inclined support 9 is fixedly fixed to the surface of the worktable 2. A first slide 3 is fixedly installed on the surface of the inclined support 9. A second slide 4 is fixedly connected to the sliding part of the first slide 3. The guiding direction of the first slide 3 and the guiding direction of the second slide 4 are perpendicular to each other, so as to form an XY two-dimensional planar moving mechanism.

[0092] An adjustment component 5 is fixedly connected to the sliding part of the second slide table 4. The lifting and lowering execution end of the adjustment component 5 is set in a direction perpendicular to the worktable 2, and is used to adjust the vertical height of the processing tool.

[0093] The surface of the worktable 2 is also fixed with a rotating component 6. The rotation center axis of the rotating component 6 is coaxially opposite to the lifting execution end of the adjustment component 5, and the clamping position of the rotating component 6 corresponds to the execution end of the adjustment component 5 in space, so as to realize rotational processing.

[0094] The surface array of the workbench 2 has several mounting holes for modular expansion installation. The mounting holes are arranged according to the standard hole spacing, and the inner wall of the mounting holes is threaded or inlaid with bushing structures for locking nuts to pass through, so as to adapt to the disassembly, assembly and position adjustment of components of different specifications.

[0095] In actual use, the supporting base is the frame 1. The upper surface of the frame 1 is fixedly connected to the worktable 2 by bolts. The worktable 2 not only serves as the installation reference, but its surface is also arrayed with several standard-spec mounting holes. The inner walls of these holes are fitted with threaded bushings or toothed structures, which facilitates the quick locking of various functional components using T-nuts.

[0096] A first slide 3 is fixedly mounted on the surface of the inclined bracket 9. The first slide 3 is preferably a manual or electric linear guide rail. A second slide 4 is vertically fixed to the slider of the first slide 3, and the guide direction of the second slide 4 is perpendicular to the guide direction of the first slide 3. This orthogonal arrangement constitutes a classic XY two-dimensional planar movement mechanism. The first slide 3 controls the forward and backward position of the machining tool, while the second slide 4 controls its left and right position; together, they achieve planar positioning of the machining end.

[0097] In this embodiment, the adjustment assembly 5 includes a support plate 51, a first side plate 52, a second side plate 53, a bearing seat 54, a rotating shaft 55, a first bevel gear 56, a crank handle 57, a lead screw 58, a second bevel gear 59, a slider 510, a guide rod 511, a sleeve block 512, a positioning plate 513, and a housing 514.

[0098] The support plate 51 is fixedly installed on the slider of the second slide table 4, and the first side plate 52 and the second side plate 53 are respectively vertically fixed on both sides of the upper surface of the support plate 51.

[0099] A lead screw 58 and a parallel guide rod 511 are mounted between the first side plate 52 and the second side plate 53. The two ends of the lead screw 58 are rotatably connected to the first side plate 52 and the second side plate 53 respectively through bearings. The shaft end of the lead screw 58 passes through the second side plate 53 and is fixed with a second bevel gear 59.

[0100] A slider 510 is screwed onto the lead screw 58, and a sleeve block 512 is sleeved onto the guide rod 511. The slider 510 and the sleeve block 512 together support and fix the positioning plate 513. The surface of the positioning plate 513 has a mounting hole for fixing the machining tool.

[0101] A bearing seat 54 is symmetrically fixed on the outer side wall of the second side plate 53. A rotating shaft 55 is supported inside the bearing seat 54. A first bevel gear 56 is fixed on the rotating shaft 55. The first bevel gear 56 meshes with the second bevel gear 59. A crank handle 57 is fixedly connected to the extended end of the rotating shaft 55.

[0102] The top of the first side plate 52 and the second side plate 53 are jointly fixed with a housing 514. The housing 514 covers the lead screw 58 and the guide rod 511 in the inner cavity to form a dustproof structure.

[0103] In actual use, when the operator rotates the crank handle 57, power is transmitted to the second bevel gear 59 via the first bevel gear 56, driving the lead screw 58 to rotate. The lead screw 58 converts the rotational motion into the linear motion of the slider 510, thereby causing the positioning plate 513 to rise and fall vertically. The cooperation between the guide rod 511 and the sleeve block 512 ensures the rigidity and straightness of the lifting process. The outer casing 514 covers the transmission components, and this structure allows adjustment of the distance between the flame nozzle and the workpiece.

[0104] In this embodiment, the rotating assembly 6 includes a cylinder 61, a first rotating shaft 62, an external gear 63, a rotating rod 64, an internal gear 65, a second rotating shaft 66, an inner rod 67, a third rotating shaft 68, a housing 69, a storage seat 610, a connecting rod 611, and a servo motor 612.

[0105] The cylinder 61 is vertically fixed to the surface of the workbench 2. The inner wall of the cylinder 61 is symmetrically fixed with a first rotating shaft 62. An external gear 63 is rotatably supported on the first rotating shaft 62. A rotating rod 64 is fixedly connected between the two external gears 63. The middle part of the rotating rod 64 is connected to the sleeve 69 through a third rotating shaft 68.

[0106] An internal gear 65 meshes between the two external gears 63. The internal gear 65 is rotatably supported on the inner wall of the housing 69 via the second rotating shaft 66. An internal rod 67 fixed on the cylinder 61 passes through the center of the internal gear 65 and the internal rod 67 penetrates the housing 69.

[0107] Any of the rotating rods 64 has a straight rod-shaped storage seat 610 for clamping the workpiece fixedly connected to its extended end. The end of the storage seat 610 is provided with rounded corners to prevent scratching the surface of the workpiece.

[0108] The side wall of the housing 69 is connected to the servo motor 612 fixedly installed on the cylinder 61 via the connecting rod 611. The servo motor 612 drives the housing 69 to swing, and drives the internal gear 65 and the external gear 63 to mesh and drive the second rotating shaft 66, thereby driving the rotating rod 64 and the placement seat 610 to achieve rotational movement.

[0109] In practical use, the servo motor 612 drives the housing 69 to rotate as a rotating arm. Since the inner rod 67 is fixed, the inner gear 65 is forced to rotate on its own axis while revolving around the center. The inner gear 65 meshes with the outer gear 63, thereby driving the outer gear 63 to rotate slowly and smoothly around the first rotating shaft 62. This transmission method has a very high reduction ratio, which can convert the high-speed rotation of the servo motor into the low-speed, high-torque rotation of the rotating rod 64. The mounting base 610 rotates synchronously, driving a 360° uniform rotation. This low-speed, heavy-load characteristic is extremely suitable for quartz machining, ensuring that the workpiece is heated evenly during oxyhydrogen flame heating, avoiding local overheating or stress concentration that could lead to cracking.

[0110] In this embodiment, a gate-shaped or rectangular frame 7 is fixedly connected to the surface of the workbench 2. A waste guide plate 8 is fixedly inclined inside the frame 7. The waste guide plate 8 is located below the rotating assembly 6 and the adjusting assembly 5 and is used to concentrate and guide the quartz chips and molten residue generated during the processing to the chip discharge port or external collection container on the surface of the workbench 2.

[0111] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A method for preparing a gas dispersing nozzle for a semiconductor process chamber, characterized in that, include: The first step is screening: semiconductor-grade high-purity quartz sand with a silica purity of ≥99.999% is selected and screened by a vibrating screen to obtain two particle sizes of quartz sand: 400~500 mesh and 500~600 mesh, which are used as base materials respectively. The second step is weighing: according to the size and specifications of the target nozzle ceramic head, the two particle sizes of quartz sand after screening are weighed quantitatively. The third step is pure water preparation: the water is filtered through multiple media to remove silt, rust and suspended solids, activated carbon adsorption to remove residual chlorine, reverse osmosis membrane separation to remove ions, organic matter and bacteria, and then continuous desalination by electro-deionization to obtain high-purity pure water. Step 4, pulping: The quartz sand weighed in step 2 and the high-purity water prepared in step 3 are mixed and stirred evenly according to a preset ratio to obtain quartz pulp material; Step 5, molding: The quartz slurry obtained in step 4 is placed in a preset mold for pressure molding to obtain a cap-shaped part A; Step 6, sintering: Place the molded part A obtained in step 5 into a heating furnace for gradient sintering; Step 7, Strengthening: Fix the molded part A obtained in step 6, and use an oxyhydrogen flame to rotate and heat the entire molded part A, so that the quartz particles inside the ceramic head are further fused, strengthening the surface and internal structure. Step 8, Cutting: Semiconductor-grade high-purity quartz sand with a silica purity of ≥99.999% is selected as raw material. After being formed into a tubular preform through melting and drawing processes, it is cut to a fixed length using diamond cutting technology to obtain tubular structure component B. In the ninth step, part B obtained in the eighth step is coaxially connected with part A strengthened in the seventh step, and the two are welded together using an oxyhydrogen flame welding process to form a gas dispersion nozzle semi-finished product. Step 10, Inspection: After flow testing, microscopic inspection, and cleaning and drying, the semi-finished gas diffusion nozzles are individually clean-packaged in a Class 1000 cleanroom. Step 11, bending: The gas dispersion nozzle semi-finished product obtained in step 10 is bent. According to the installation requirements of downstream semiconductor equipment, hydrogen-oxygen flame heating is used in conjunction with bending mold to bend the quartz tube section of the welded quartz filter assembly to the target angle. After bending, it is cleaned to obtain a gas dispersion nozzle for semiconductor process chambers.

2. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The gradient sintering in the sixth step specifically refers to: First heating stage: The temperature is increased from room temperature to 750℃ at a heating rate of 15℃ / min to remove moisture from the inside of the billet; First heat preservation stage: heat preservation at 750℃ for 1~2 hours to make the temperature inside and outside the billet uniform and the quartz particles undergo preliminary solid-phase reaction. The second heating stage: the temperature is increased from 750℃ to 1350℃ at a heating rate of 20℃ / min, quickly crossing the medium temperature zone to avoid unnecessary crystal phase transformation and allowing the material to enter the densification sintering stage. The second heat preservation stage: heat preservation at 1350℃ for 8~10 hours, allowing the fine quartz particles to melt and flow, and adjacent quartz particles to fuse to form a high-strength skeleton, thus completing the sintering.

3. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The traffic test in step ten specifically involves: Connect the gas dispersion nozzle to the test pipeline, introduce high-purity nitrogen, adjust the pipeline pressure to the set value, and read the electronic flow meter reading. A flow rate ≥ 40 L / min is considered qualified, while a flow rate below this value is considered unqualified.

4. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The microscopic examination in the tenth step specifically involves: Microscopic inspection is performed, and the structure is observed under 100x magnification. Defective products are removed, and qualified products are cleaned and packaged.

5. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The cleaning process in step ten specifically involves: Immerse the gas dispersing nozzle that has passed the flow test in a 10% hydrofluoric acid solution for 30 minutes. Subsequently, the high-purity water prepared in the third step was used to ultrasonically clean the acid-washed nozzle to remove residual acid and impurities from the surface.

6. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The packaging in step ten specifically refers to: After cleaning, the gas diffusion nozzles are dried in a clean environment and then individually packaged in a Class 1000 cleanroom.

7. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, In the first step, the mass proportion of 500-600 mesh quartz sand is 60%-70% of the total raw material mass of the ceramic head, and the mass proportion of 400-500 mesh quartz sand is 30%-40%. By using dual particle size distribution, the porosity uniformity of the sintered body is controlled.

8. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, The 500-600 mesh quartz sand mentioned in the first step, after sintering, can make the ceramic head form a diffuse pore structure with a maximum pore size ≤30μm, an average pore size of 25-30μm, and a filtration accuracy of 15-30μm.

9. The method for preparing a gas dispersing nozzle for a semiconductor process chamber according to claim 1, characterized in that, In step seven, the flame temperature of the hydrogen-oxygen flame heating is 1900~2200℃, the rotation speed of the rotating mechanism is 5~10r / min, and the heating time is 3~5min, so as to ensure surface melting and strengthening while avoiding pore structure blockage.

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