Semiconductor processing apparatus for dielectric window temperature control

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a semiconductor processing equipment for medium window temperature control, which comprises a reaction chamber, a shell, a gas pipeline, an acid discharge pipeline, a flow adjusting part, an opening adjusting part, a temperature sensor and a control module; the flow adjusting part is arranged in the gas pipeline; the temperature sensor is used for collecting temperature information of the medium window body; the control module is connected with the temperature sensor, the flow adjusting part and the opening adjusting part respectively; the control module controls the flow adjusting part to adjust the gas inlet amount of cooling gas and / or controls the opening adjusting part to adjust the gas outlet amount of heated gas according to the temperature information; through the partitioned independent gas pipeline and acid discharge pipeline, the linkage regulation and control mechanism of the flow adjusting part, the opening adjusting part and the control module can synchronously adjust the gas inlet amount of cooling gas and the gas outlet amount of heated gas according to the real-time temperature of the medium window body.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a semiconductor processing equipment for dielectric window temperature control. Background Technology

[0002] In semiconductor plasma equipment, the ceramic dielectric window above the reaction chamber is a key component for radio frequency energy coupling. Existing technologies generally use a single clean dry air (CDA) to continuously purge the back of the dielectric window for temperature control. Not only do different processes require different fixed CDA flow rates, but even machines in the same batch need to be specially tuned one by one due to hardware differences, resulting in a huge amount of debugging work. Moreover, for processes with dynamically changing heat loads, the fixed flow rate mode simply cannot maintain a constant temperature. Although there have been attempts to improve the system by introducing acid drain lines to assist in regulation, the existing solutions still lack a structural design that coordinates the regulation of acid drain pumping speed with the regulation of CDA gas supply, and cannot balance the temperature control accuracy under a wide dielectric window with equipment maintenance costs. Summary of the Invention

[0003] This invention relates to a semiconductor processing device for dielectric window temperature control. The purpose is to solve the problems of cumbersome debugging of existing dielectric window body temperature control, large temperature fluctuations under dynamic operating conditions, and insufficient temperature control accuracy by using a coordinated and adjustable design of cooling gas input and heated gas discharge. This achieves precise and stable control of the dielectric window body temperature and reduces equipment debugging and maintenance costs.

[0004] To achieve the above objectives, the present invention provides a semiconductor processing apparatus for dielectric window temperature control, comprising: The reaction chamber has a medium window body at the top; The outer casing is located outside the reaction chamber. A gas pipeline passes through the outer casing and extends above the medium window body to input cooling gas to cool the medium window body; An acid discharge pipeline passes through the outer shell and extends to the top of the medium window body and is located near the top of the medium window body to output the heated gas after heat exchange through the medium window body. A flow regulator is provided in the gas pipeline; An opening adjustment element is provided in the acid discharge pipeline; A temperature sensor is used to collect temperature information of the medium window body; The control module is connected to the temperature sensor, the flow regulator, and the opening regulator, respectively. The control module controls the flow regulator to adjust the intake volume of cooling gas and / or controls the opening regulator to adjust the exhaust volume of heated gas, so as to maintain the temperature of the medium window body within a preset range.

[0005] Optionally, the semiconductor processing device for dielectric window temperature control further includes a central gathering ring and an edge gathering ring; Both the central convergence ring and the edge convergence ring are located at the top of the medium window body. The central convergence ring is arranged between the central region and the edge region of the medium window body to enclose the central region therein. The edge convergence ring is arranged outside the edge region and located at the top edge of the medium window body to enclose the edge region between the central convergence ring and the edge convergence ring.

[0006] Optionally, the semiconductor processing device for dielectric window temperature control further includes a first retractor; The first gathering member is circumferentially disposed at the opening end of the central gathering ring and close to the inner ring wall of the central gathering ring. The enclosing inner diameter of the first gathering member gradually narrows in the direction away from the surface of the central region, so as to guide and gather the heated gas rebounding from the central region to the gas collection space enclosed below the first gathering member.

[0007] Optionally, the interior of the central gathering ring is provided with a gathering groove extending in the circumferential direction, and a first suction hole communicating with the gathering groove is recessed on its inner ring wall. The first suction hole is located near the bottom of the first gathering member, and there are several first suction holes arranged at intervals in the circumferential direction. The acid discharge pipeline includes a first branch pipe, which extends to the central gathering ring and communicates with the gathering groove to discharge the heated gas that gathers in the gas collection space formed below the first gathering member.

[0008] Optionally, the medium window body includes: The first flow channel is connected to the gathering groove and extends radially in the central region; The second flow channel is provided in several parts, with one end extending axially through the top of the central region and the other end communicating with the first flow channel, so as to input cooling gas into the interior of the central region through the second flow channel and output heated gas into the collection groove through the first flow channel.

[0009] Optionally, the semiconductor processing apparatus for dielectric window temperature control further includes a second retractor; The second gathering member is circumferentially disposed at the opening end of the edge gathering ring and close to the inner ring wall of the edge gathering ring. The enclosing inner diameter of the second gathering member gradually narrows in the direction away from the edge region, so as to guide and gather the heated gas rebounding from the edge region to the gas collection space enclosed below the second gathering member.

[0010] Optionally, the inner side of the edge gathering ring is provided with a gathering groove extending in the circumferential direction, and a second suction hole communicating with the gathering groove is recessed on its inner ring wall. The second suction hole is provided near the bottom of the second gathering member, and a plurality of the second suction holes are provided and arranged at intervals in the circumferential direction. The acid discharge pipeline includes a second branch pipe, which extends to the edge gathering ring and communicates with the gathering groove to discharge the heated gas that gathers in the gas collection space formed below the second gathering member.

[0011] Optionally, the medium window body includes: The third flow channel is connected to the second gathering groove and extends radially within the edge region; The fourth flow channel is provided in several parts, with one end extending axially through the top of the edge region and the other end communicating with the third flow channel, so that cooling gas is input into the interior of the edge region through the fourth flow channel and heated gas is output into the second collection groove through the third flow channel.

[0012] Optionally, the airway may further include a central guide tube and an edge guide tube; The central guide pipe extends directly above the central region of the medium window body; the edge guide pipe extends directly above the edge region of the medium window body; and the exhaust end of the edge guide pipe is arranged around the exhaust end of the central guide pipe, so as to input cooling gas into the central region and the edge region through the central guide pipe and the edge guide pipe respectively.

[0013] Optionally, the gas pipeline also includes a main output pipe connected to the central guide pipe and the edge guide pipe, and the main output pipe is connected to an external gas source; The flow regulating component includes a first sub-component, a second sub-component, and a third sub-component; The first sub-component is located on the main output pipe to adjust the total amount of cooling gas entering the central guide pipe and the edge guide pipe; The second sub-component is disposed inside the central guide tube to adjust the intake volume of cooling gas in the central region; The third component is disposed inside the edge guide tube to adjust the intake volume of cooling gas in the edge region.

[0014] Optionally, the opening adjustment component includes a sub-adjustment component; The sub-regulator is located in the first branch pipe. The control module controls the sub-regulator to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the central area of ​​the medium window body within a preset range.

[0015] Optionally, the opening adjustment component further includes a second sub-adjustment component; The second sub-regulator is located in the second branch pipe. The control module controls the second sub-regulator to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the edge area of ​​the medium window body within a preset range.

[0016] The beneficial effects of this invention are as follows: This invention, through the independent gas pipeline and acid discharge pipeline, combined with the linkage control mechanism of flow regulator, opening regulator and control module, can synchronously adjust the cooling gas intake and heated gas exhaust volume according to the real-time temperature of the medium window body. It does not require repeated debugging of fixed parameters for different processes and different hardware differences, and can adapt to process scenarios with dynamic changes in heat load, always maintaining the temperature of the medium window body within the preset range. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in some embodiments of the present invention; Figure 2 for Figure 1 An enlarged structural diagram of position A in the diagram.

[0018] Explanation of reference numerals in the attached figures: 1. Outer shell; 2. Medium window body; 21. First flow channel; 22. Second flow channel; 23. Third flow channel; 24. Fourth flow channel; 3. Gas pipeline; 4. Flow regulating component; 5. Acid discharge pipeline; 6. Opening regulating component; 61. Sub-regulatory component one; 62. Sub-regulatory component two; 7. Central guide tube; 8. Edge guide tube; 9. Central gathering ring; 91. Gathering groove one; 92. First suction hole; 10. Edge gathering ring; 101. Gathering groove two; 102. Second suction hole; 11. First gathering component; 12. Second gathering component; 13. First branch pipe; 14. Second branch pipe; 15. Reaction chamber. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0020] This invention relates to a semiconductor processing device for dielectric window temperature control. The purpose is to solve the problems of cumbersome debugging of existing dielectric window body temperature control, large temperature fluctuations under dynamic operating conditions, and insufficient temperature control accuracy by using a coordinated and adjustable design of cooling gas input and heated gas discharge. This achieves precise and stable control of the dielectric window body temperature and reduces equipment debugging and maintenance costs.

[0021] To address the problems existing in the prior art, embodiments of the present invention provide a semiconductor processing device for dielectric window temperature control, such as... Figure 1 As shown, the semiconductor processing equipment for dielectric window temperature control includes a reaction chamber 15, a shell 1, a gas pipeline 3, an acid discharge pipeline 5, a flow regulator 4, an opening regulator 6, a temperature sensor, and a control module.

[0022] In some embodiments, such as Figure 1 As shown, the top of the reaction chamber 15 is provided with a medium window body 2.

[0023] In some embodiments, such as Figure 1 As shown, the outer shell 1 covers the outside of the reaction chamber 15 to provide a sealed cooling space around the reaction chamber 15 for cooling the medium window body 2.

[0024] In some embodiments, such as Figure 1 As shown, the gas pipe 3 penetrates the outer casing 1 and extends above the medium window body 2 to input cooling gas to cool the medium window body 2, specifically acting on the top surface of the medium window body 2. Specifically, as... Figure 1 As shown, the air pipe 3 is located on the right side wall of the outer casing 1 and is positioned near the top of the outer casing 1.

[0025] In some embodiments, such as Figure 1 As shown, the acid discharge pipe 5 penetrates the outer casing 1 and extends above the medium window body 2, near the top of the medium window body 2, to output the heated gas after heat exchange through the medium window body 2. Figure 1 As shown, specifically, the acid discharge pipe 5 is located on the left side wall of the outer casing 1 and is positioned near the top of the outer casing 1; preferably, the acid discharge pipe 5 and the gas pipe 3 are positioned opposite each other on opposite side walls of the outer casing 1.

[0026] In some embodiments, such as Figure 1 As shown, the flow regulating component 4 is located in the gas pipeline 3; it is used to regulate the intake volume of cooling gas. The flow regulating component 4 can be an electric proportional valve, an electronic expansion valve, or a flow controller, and its specific selection can be determined according to the required flow regulation accuracy and response speed of the process.

[0027] In some embodiments, such as Figure 1 As shown, the opening adjustment component 6 is located in the acid discharge pipeline 5; it is used to adjust the intake volume of the heated gas. The opening adjustment component 6 can be an electric air valve, a pneumatic butterfly valve, or an adjustable throttle valve, and the specific selection can be determined according to the pumping capacity and response requirements of the acid discharge system.

[0028] In some embodiments, the temperature sensor is used to collect temperature information of the medium window body 2; the temperature sensor can be a contact thermocouple, platinum resistance thermometer, or a non-contact infrared temperature sensor, and the specific selection can be determined according to the material characteristics of the medium window body 2, the installation space, and the temperature measurement accuracy requirements.

[0029] In some embodiments, the control module is connected to the temperature sensor, the flow regulator 4 and the opening regulator 6 respectively. The control module controls the flow regulator 4 to adjust the intake volume of cooling gas according to the temperature information, and / or controls the opening regulator 6 to adjust the exhaust volume of heated gas, so that the temperature of the medium window body 2 is maintained within a preset range.

[0030] Through the closed-loop linkage of the control module with the temperature sensor, flow regulator 4, and opening regulator 6, the intake volume of cooling gas and the exhaust volume of heated gas can be dynamically and collaboratively adjusted based on the real-time temperature of the medium window body 2. This eliminates the need for repeated debugging of fixed parameters for different processes and hardware differences, adapting to complex process scenarios with dynamic temperature changes at the top of the medium window body 2. While quickly suppressing temperature fluctuations, it also ensures temperature consistency at the top of the medium window body 2, consistently maintaining the temperature of the medium window body 2 within the preset range. This effectively avoids the problems of insufficient temperature control accuracy and temperature drift in a single fixed flow mode, and eliminates the need for redundant hardware design and repeated debugging costs, significantly improving the temperature control reliability and maintenance efficiency of the equipment under different operating conditions.

[0031] It is worth noting that maintaining the temperature of the medium window body 2 within the preset range can be achieved either by controlling the intake of cooling gas alone or by controlling the exhaust of heated gas alone, or by both working together. This setting gives the temperature control strategy of the medium window body 2 great flexibility and adaptability to operating conditions. In process stages where the temperature fluctuation on the medium window body 2 is small or the response speed requirement is not high, temperature control can be achieved simply by adjusting the intake of cooling gas (e.g., changing the opening of the flow regulator) or simply by adjusting the exhaust of heated gas (e.g., changing the opening of the opening regulator), simplifying the control logic and reducing energy consumption. However, in process scenarios where the temperature on the medium window body 2 changes drastically or the temperature control accuracy requirement is extremely high, the coordinated adjustment mode of the two is activated. The control module calculates the optimal "intake and exhaust" ratio in real time, which can quickly suppress temperature fluctuations and avoid excessive thermal stress or airflow disturbance in the medium window body 2 caused by excessive adjustment of a single variable. Thus, while ensuring that the temperature of the medium window body 2 is quickly leveled and stabilized within the preset range, process stability and equipment operation reliability are also taken into account.

[0032] In some embodiments, the control module can be an embedded controller independent of the reaction chamber, or it can be integrated into the central control system of the semiconductor processing equipment; its hardware can be equipped with temperature control logic such as PID algorithm, fuzzy control or model predictive control, and it can receive temperature sensor signals from the medium window body 2 in real time.

[0033] In some embodiments, the semiconductor processing apparatus further includes a suction device (not shown) connected to the outlet end of the acid discharge pipe 5 to extract heated gas from the housing 1 through the acid discharge pipe 5 when the suction device is in operation.

[0034] In some embodiments, the semiconductor processing device further includes a gas supply source (not shown) connected to the inlet end of the gas pipeline 3 to introduce cooling gas into the housing 1 through the gas pipeline 3.

[0035] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor processing device for dielectric window temperature control also includes a central gathering ring 9 and an edge gathering ring 10.

[0036] In some embodiments, such as Figure 1 and Figure 2As shown, the central gathering ring 9 and the edge gathering ring 10 are both disposed on the top of the medium window body 2. The central gathering ring 9 is disposed around the central area and the edge area of ​​the medium window body 2 to enclose the central area therein. The edge gathering ring 10 is disposed around the outside of the edge area and located at the top edge of the medium window body 2 to enclose the edge area between the central gathering ring 9 and the edge gathering ring 10.

[0037] The central convergence ring 9 and the edge convergence ring 10 divide the top of the medium window body 2 into two independent temperature control zones: a central region and an edge region. This structurally blocks the flow of hot air between the central and edge regions, allowing the cooling gas to act directionally on the corresponding areas and exchange heat effectively with the top of the medium window body 2. This avoids the uneven temperature problem caused by interference between the central and edge regions in traditional overall temperature control modes.

[0038] In some embodiments, such as Figure 2 As shown, the semiconductor processing device for dielectric window temperature control also includes a first retractor 11.

[0039] In some embodiments, such as Figure 2 As shown, the first gathering member 11 is circumferentially disposed at the opening end of the central gathering ring 9 and close to the inner ring wall of the central gathering ring 9. The enclosing inner diameter of the first gathering member 11 gradually narrows in the direction away from the surface of the central region (i.e., the axial upward direction) so as to guide the heated gas rebounded from the central region and gather it into the gas collection space enclosed below the first gathering member 11.

[0040] The first gathering member 11 is designed as a gradually narrowing enclosure structure close to the inner wall of the central gathering ring 9, which can form a directional flow channel. It can constrain and gather the heated gas rebounding from the central region into the gas collection space below it, effectively avoiding the disorderly diffusion of hot air flow at the top of the medium window body 2 or mutual interference with the thermal field of the edge region, and significantly improving the collection efficiency and controllability of the heated gas in the central region.

[0041] In some embodiments, the shape of the first gathering member 11 can be a tapered cone structure with a circular cross-section. Its inner wall surface is preferably designed as a smooth arc-shaped flow guide surface, and the enclosing inner diameter gradually narrows in the direction away from the central region (i.e., in the axial direction). This specific shape can allow the heated gas to converge smoothly along the flow guide surface without occupying additional internal space of the outer shell 1. This avoids the airflow vortex and heat dissipation dead angle that are easy to generate in right-angle structures, and significantly reduces flow resistance.

[0042] In some embodiments, such as Figure 2As shown, the interior of the central gathering ring 9 is provided with a circumferentially extending gathering groove 91, and a first suction hole 92 communicating with the gathering groove 91 is recessed on its inner ring wall. The first suction hole 92 is located near the bottom of the first gathering member 11, and there are several first suction holes 92 arranged at circumferential intervals, preferably at equal intervals. It is worth noting that the cavity of the first suction hole 92 is inclined and is obliquely upward from the air inlet end to the air outlet end, that is, the air outlet end is located above the air inlet end, and works in conjunction with the air extraction device connected to the acid discharge pipe 5 (i.e., the first branch pipe 13) to extract the heated gas in the central gathering ring 9.

[0043] In some embodiments, the cavity of the gathering groove 91 can be understood as having a ring-shaped structure.

[0044] In some embodiments, such as Figure 2 As shown, the acid discharge pipeline 5 includes a first branch pipe 13, which extends to the central gathering ring 9 and communicates with the gathering groove 91 to discharge the heated gas that gathers in the gas collection space formed below the first gathering member 11.

[0045] A circumferentially extending collection groove 91 is provided inside the central collection ring 9, and together with the first suction holes 92 arranged at intervals along the circumference, a 360° evenly distributed negative pressure suction end is formed, which can simultaneously collect and gather the heated gas in the gas collection space below the first collection component 11, avoiding local hot gas residue; at the same time, the design of the cavity of the first suction hole 92 tilting towards the gas collection space increases the capture angle and suction efficiency of the rising heated gas, reduces the return of heated gas and eddy current resistance, and allows the heated gas to quickly and smoothly flow into the collection groove 91 and be centrally discharged through the first branch pipe 13.

[0046] In some embodiments, such as Figure 2 As shown, the medium window body 2 is provided with a first flow channel 21 and a second flow channel 22.

[0047] In some embodiments, such as Figure 2 As shown, the first flow channel 21 is connected to the gathering groove 91 and extends radially in the central region; the second flow channel 22 is provided in a plurality of such channels, one end of which extends axially through the top of the central region, and the other end is connected to the first flow channel 21, so as to introduce cooling gas into the interior of the central region through the second flow channel 22 to cool the interior of the central region, and to export the heated gas in the first flow channel 21 into the gathering groove 91.

[0048] The radial extension of the first flow channel 21 in the central region, in conjunction with the second flow channel 22, constructs a highly efficient heat exchange circuit of "axial injection, radial diffusion, and axial exhaust" for the cooling gas. This allows the cooling gas to penetrate deep into the interior of the central region for direct heat exchange, significantly increasing the heat exchange area and efficiency, and avoiding temperature control lag caused by surface purging of only the central region.

[0049] In some embodiments, the number of first flow channels 21 is set to a plurality of them, and the plurality of first flow channels 21 are arranged at equal intervals along the circumference. At the same time, the cavity of each first flow channel 21 extends radially from the center position of the central region to the edge position of the central region, and each first flow channel 21 forms a radial structure in the central region. The same first flow channel 21 is connected to a plurality of second flow channels 22, and the plurality of second flow channels 22 are arranged at equal intervals along the extension direction of the first flow channel 21.

[0050] In some embodiments, such as Figure 2 As shown, the semiconductor processing device for dielectric window temperature control further includes a second gathering member 12; the second gathering member 12 is circumferentially disposed at the opening end of the edge gathering ring 10 and close to the inner ring wall of the edge gathering ring 10, and the enclosing inner diameter of the second gathering member 12 gradually narrows in the direction away from the surface of the edge region (i.e., the axial upward direction) so as to guide the heated gas rebounded from the edge region and gather it into the gas collection space enclosed below the second gathering member 12.

[0051] The second gathering member 12 forms a tapered flow guiding structure at the opening end of the edge gathering ring 10, which can directionally constrain the heated gas rebounding from the edge area and efficiently gather it into the gas collection space below it, effectively blocking the heated gas from diffusing outward or flowing into the central area, and avoiding the generation of local high temperature in the edge area due to heat accumulation.

[0052] In some embodiments, the shape of the second gathering member 12 can be a tapered cone structure with a circular cross-section. Its inner wall surface is preferably designed as a smooth arc-shaped flow guide surface, and the enclosing inner diameter gradually narrows away from the edge area (i.e., in the axial direction). This specific shape can allow the heated gas to converge smoothly along the flow guide surface without occupying additional internal space of the outer shell 1. This avoids the airflow vortex and heat dissipation dead angle that are easy to generate by right-angle structures, and significantly reduces flow resistance.

[0053] In some embodiments, such as Figure 2As shown, the edge gathering ring 10 has a second gathering groove 101 extending circumferentially inside, and a second suction hole 102 communicating with the second gathering groove 101 is recessed on its inner ring wall. The second suction hole 102 is located near the bottom of the second gathering member 12, and there are several second suction holes 102 arranged at circumferential intervals, preferably at equal intervals. The acid discharge pipeline 5 includes a second branch pipe 14, which extends to the edge gathering ring 10 and communicates with the second gathering groove 101 to discharge the heated gas gathered in the gas collection space formed below the second gathering member 12. It is worth noting that the cavity of the second suction hole 102 is inclined and is obliquely upward from the air inlet end to the air outlet end, that is, the air outlet end is located above the air inlet end, which, together with the air extraction device connected to the acid discharge pipeline 5 (i.e., the second branch pipe 14), extracts the heated gas in the edge gathering ring 10.

[0054] By setting a circumferentially through-hole 101 and second suction holes 102 arranged at intervals along the circumference inside the edge gathering ring 10, a uniform negative pressure suction end covering the edge area is constructed. This can synchronously and efficiently collect the heated gas in the gas collection space below the second gathering member 12 and merge it into the gathering groove 101, avoiding the stagnation of heated gas or local overheating in the edge area. At the same time, the direct connection design between the second branch pipe 14 and the gathering groove 101 realizes the centralized export of heated gas. Combined with the independent flow regulation of the edge area by the acid discharge pipe 5, it can accurately match the heat load changes in the edge area, which not only improves the heat removal efficiency and temperature control response speed of the edge area, but also avoids the interference of edge hot airflow to the central area.

[0055] In some embodiments, the cavity of the gathering groove 101 can be understood as having an annular structure.

[0056] In some embodiments, such as Figure 2 As shown, the medium window body 2 is provided with a third flow channel 23 and a fourth flow channel 24.

[0057] In some embodiments, such as Figure 2 As shown, the third flow channel 23 is connected to the second collection groove 101 and extends radially in the edge region; the fourth flow channel 24 is provided in several forms, and one end of the fourth flow channel 24 extends axially through the top of the edge region, and the other end is connected to the third flow channel 23, so as to introduce cooling gas into the interior of the edge region through the fourth flow channel 24 and output heated gas into the second collection groove 101 through the third flow channel 23.

[0058] The radial extension of the third flow channel 23 in the edge region and the axial array distribution of the fourth flow channel 24 construct a closed-loop heat exchange path of "axial injection, radial diffusion, and axial exhaust" in the edge region. This allows the cooling gas to penetrate deep into the edge region for direct contact heat exchange, significantly improving the heat exchange efficiency and temperature response speed of the edge region. This avoids the temperature control lag and overheating problems in the edge region caused by relying solely on external purging. At the same time, the heated gas can flow in the reverse direction through the fourth flow channel 24 into the collection groove 101 and be centrally discharged through the second branch pipe 14. This achieves coordinated control of cooling intake and heated exhaust in the edge region, effectively suppressing temperature drift caused by concentrated heat load in the edge region, and reducing the impact of external airflow disturbance on the process environment through the internal flow channel design.

[0059] In some embodiments, a plurality of third flow channels 23 are provided, and the plurality of third flow channels 23 are arranged at equal intervals along the circumference. At the same time, the cavity of each third flow channel 23 extends radially from the center position of the edge region to the edge position of the edge region, and each third flow channel 23 forms a radial structure in the central region. A plurality of fourth flow channels 24 are correspondingly connected to the same third flow channel 23, and the plurality of fourth flow channels 24 are arranged at equal intervals along the extension direction of the third flow channel 23.

[0060] In some embodiments, the third flow channel 23 is not connected to the first flow channel 21. By isolating the third flow channel 23 from the first flow channel 21, the cooling flow paths of the edge region and the central region are completely independent, structurally blocking the mutual interference of heated gases in the two regions, so that the heat exchange processes of the central region and the edge region can be carried out independently without interference. This design allows the edge region and the central region to configure differentiated cooling strategies and cooling gas flow parameters according to their respective heat (e.g., the central region has a higher temperature and the edge region dissipates heat faster). This avoids the problem of "thermal short circuit" or uneven distribution of cooling resources caused by sharing flow channels, and improves the flexibility and accuracy of zoned temperature control, ensuring that both the central region and the edge region can be maintained within the preset temperature range efficiently and stably.

[0061] In some embodiments, such as Figure 1 As shown, the gas pipeline 3 also includes a central guide pipe 7 and an edge guide pipe 8; the central guide pipe 7 extends directly above the central region of the medium window body 2; the edge guide pipe 8 extends directly above the edge region of the medium window body 2; and the exhaust end of the edge guide pipe 8 is arranged around the exhaust end of the central guide pipe 7, so as to input cooling gas into the central region and the edge region through the central guide pipe 7 and the edge guide pipe 8 respectively.

[0062] The independent arrangement of the central guide pipe 7 and the edge guide pipe 8 enables precise directional delivery of cooling gas to the central and edge regions, avoiding the imbalance in cooling intensity between the central and edge regions caused by uneven airflow distribution when delivering air through a single straight pipe. At the same time, the exhaust end of the edge guide pipe 8 is arranged around the exhaust end of the central guide pipe 7, forming a uniform air curtain covering the entire area on the top of the medium window body 2. This ensures that both the central and edge regions can obtain a matching amount of cooling gas according to the temperature of each region, and also blocks direct interference between the cooling gas or heated gas in the central and edge regions through physical partitioning.

[0063] In some embodiments, such as Figure 1 As shown, the gas pipeline 3 also includes a main output pipe (unlabeled) connected to the central guide pipe 7 and the edge guide pipe 8, and the main output pipe is connected to an external gas source; the flow regulating component 4 includes a first sub-component (unlabeled), a second sub-component (unlabeled) and a third sub-component (unlabeled); the first sub-component is located on the main output pipe to regulate the total amount of cooling gas entering the central guide pipe 7 and the edge guide pipe 8; the second sub-component is located on the central guide pipe 7 to regulate the amount of cooling gas entering the central region; the third sub-component is located on the edge guide pipe 8 to regulate the amount of cooling gas entering the edge region.

[0064] Through a three-level hierarchical adjustment architecture consisting of a first sub-component, a second sub-component, and a third sub-component, the "total quantity, zone, and region" coordinated control of cooling gas supply is achieved. The first sub-component can quickly respond to changes in the overall process heat load and uniformly adjust the total amount of cooling gas intake. The second and third sub-components can independently fine-tune the intake volume of the central and peripheral regions, respectively, to accurately adapt to the thermal field differences between the central and peripheral regions. This hierarchical adjustment mechanism avoids the problem of global and local demand conflicts in traditional single valve adjustment, and can flexibly match the asymmetric temperature control requirements of the central and peripheral regions under different process conditions. It significantly improves the temperature control accuracy, dynamic response speed, and process adaptability of the entire medium window body 2, while reducing unnecessary gas consumption and optimizing operating costs.

[0065] In some embodiments, such as Figure 1 As shown, the opening adjustment component 6 includes a sub-adjustment component 61; the sub-adjustment component 61 is disposed on the first branch pipe 13, and the control module controls the sub-adjustment component 61 to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the central area of ​​the medium window body 2 within a preset range.

[0066] By independently setting the sub-regulator 61 on the first branch pipe 13, the exhaust volume of the heated gas in the central area is individually controllable. This allows the control module to perform precise closed-loop regulation based on the real-time temperature feedback of the central area. It can increase the exhaust volume to accelerate heat dissipation when the temperature in the central area is too high, and decrease the exhaust volume to maintain thermal balance when the temperature is too low. This avoids the problem of crosstalk between the heated gas in the central area and the edge area in the traditional overall acid exhaust regulation. This design effectively improves the temperature control response speed and steady-state accuracy of the central area, enabling it to independently adapt to the unique temperature change pattern of the central area.

[0067] In some embodiments, the opening adjustment member 6 further includes a sub-adjustment member 62; the sub-adjustment member 62 is disposed on the second branch pipe 14, and the control module controls the sub-adjustment member 62 to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the edge area of ​​the medium window body 2 within a preset range.

[0068] By adding an independent sub-regulator 62 to the second branch pipe 14, the independent closed-loop regulation of the exhaust volume of the heated gas in the edge area is realized. This allows the control module to accurately match the heat load changes in the edge area based on the real-time temperature feedback. It can increase the exhaust volume to dissipate heat quickly when the temperature in the edge area is high due to heat accumulation, and decrease the exhaust volume to maintain thermal balance when the temperature is low. This effectively solves the problem of lagging temperature control in the edge area and difficulty in adapting to local thermal field fluctuations in traditional overall acid exhaust regulation. This design further enhances the independent temperature control capability of the central area and the edge area, avoiding mutual interference between the two areas during thermal field regulation.

[0069] In some embodiments, the semiconductor processing equipment can be an etching equipment, a resist stripping equipment, or a deposition equipment, specifically including but not limited to capacitively coupled plasma etching machines, inductively coupled plasma etching machines, ashing resist stripping machines, chemical vapor deposition equipment, and atomic layer deposition equipment, etc., which utilize radio frequency energy to excite plasma through a dielectric window. Since such equipment generally experiences dynamic temperature changes in the dielectric window during the process, it is highly susceptible to temperature fluctuations that could lead to a decrease in process uniformity or even breakage of the dielectric window. Integrating the aforementioned reaction chamber with zoned and coordinated temperature control capabilities into such equipment can effectively maintain the temperature stability of the dielectric window throughout the entire process cycle, significantly improving etching rate, resist stripping efficiency, uniformity of film deposition thickness, and process yield.

[0070] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor processing apparatus for dielectric window temperature control, characterized in that, include: The reaction chamber has a medium window body at the top; The outer casing is located outside the reaction chamber. A gas pipeline passes through the outer casing and extends above the medium window body to input cooling gas to cool the medium window body; An acid discharge pipeline passes through the outer shell and extends to the top of the medium window body and is located near the top of the medium window body to output the heated gas after heat exchange through the medium window body. A flow regulator is provided in the gas pipeline; An opening adjustment element is provided in the acid discharge pipeline; A temperature sensor is used to collect temperature information of the medium window body; The control module is connected to the temperature sensor, the flow regulator and the opening regulator respectively. The control module controls the flow regulator to adjust the intake volume of cooling gas according to the temperature information, and / or controls the opening regulator to adjust the exhaust volume of heated gas, so as to maintain the temperature of the medium window body within a preset range. A central convergence ring is provided at the top of the medium window body, and the central convergence ring is arranged between the central area and the edge area of ​​the medium window body to enclose the central area therein; The first gathering member is circumferentially disposed at the opening end of the central gathering ring and close to the inner ring wall of the central gathering ring. The enclosing inner diameter of the first gathering member gradually narrows in the direction away from the surface of the central region, so as to guide and gather the heated gas rebounding from the central region to the gas collection space enclosed below the first gathering member.

2. The semiconductor processing apparatus for dielectric window temperature control according to claim 1, characterized in that, It also includes the edge-gathering circle; The edge gathering ring is disposed at the top of the medium window body, and the edge gathering ring is arranged around the outside of the edge region and located at the top edge of the medium window body, so as to surround the edge region between the central gathering ring and the edge gathering ring.

3. The semiconductor processing apparatus for dielectric window temperature control according to claim 2, characterized in that, The center gathering ring has a gathering groove extending circumferentially inside, and a first suction hole communicating with the gathering groove is recessed on its inner ring wall. The first suction hole is located near the bottom of the first gathering member, and there are several first suction holes arranged at intervals along the circumferential direction. The acid discharge pipeline includes a first branch pipe, which extends to the central gathering ring and communicates with the gathering groove to discharge the heated gas that gathers in the gas collection space formed below the first gathering member.

4. The semiconductor processing apparatus for dielectric window temperature control according to claim 3, characterized in that, The medium window body is provided with: The first flow channel is connected to the gathering groove and extends radially in the central region; The second flow channel is provided in several parts, with one end extending axially through the top of the central region and the other end communicating with the first flow channel, so as to introduce cooling gas into the interior of the central region through the second flow channel and output heated gas into the collection groove through the first flow channel.

5. The semiconductor processing apparatus for dielectric window temperature control according to claim 2, characterized in that, It also includes a second gathering component; The second gathering member is circumferentially disposed at the opening end of the edge gathering ring and close to the inner ring wall of the edge gathering ring. The enclosing inner diameter of the second gathering member gradually narrows in the direction away from the surface of the edge region, so as to guide and gather the heated gas rebounded from the edge region to the gas collection space enclosed below the second gathering member.

6. The semiconductor processing apparatus for dielectric window temperature control according to claim 5, characterized in that, The inner side of the edge gathering ring is provided with a gathering groove extending in the circumferential direction, and a second suction hole communicating with the gathering groove is recessed on its inner ring wall. The second suction hole is located near the bottom of the second gathering member, and there are several second suction holes arranged at intervals in the circumferential direction. The acid discharge pipeline includes a second branch pipe, which extends to the edge gathering ring and communicates with the gathering groove to discharge the heated gas that gathers in the gas collection space formed below the second gathering member.

7. The semiconductor processing apparatus for dielectric window temperature control according to claim 6, characterized in that, The medium window body is provided with: The third flow channel is connected to the second gathering groove and extends radially within the edge region; The fourth flow channel is provided in several parts, with one end extending axially through the top of the edge region and the other end communicating with the third flow channel, so as to introduce cooling gas into the interior of the edge region through the fourth flow channel and output heated gas into the second collection groove through the third flow channel.

8. The semiconductor processing apparatus for dielectric window temperature control according to claim 2, characterized in that, The airway also includes a central guide tube and an edge guide tube; The central guide pipe extends directly above the central region of the medium window body; the edge guide pipe extends directly above the edge region of the medium window body; and the exhaust end of the edge guide pipe is arranged around the exhaust end of the central guide pipe, so as to input cooling gas into the central region and the edge region through the central guide pipe and the edge guide pipe respectively.

9. The semiconductor processing apparatus for dielectric window temperature control according to claim 8, characterized in that, The gas pipeline also includes a main output pipe connected to the central guide pipe and the edge guide pipe, and the main output pipe is connected to an external gas source; The flow regulating component includes a first sub-component, a second sub-component, and a third sub-component; The first sub-component is located on the main output pipe to adjust the total amount of cooling gas entering the central guide pipe and the edge guide pipe; The second sub-component is disposed inside the central guide tube to adjust the intake volume of cooling gas in the central region; The third component is disposed inside the edge guide tube to adjust the intake volume of cooling gas in the edge region.

10. The semiconductor processing apparatus for dielectric window temperature control according to claim 3, characterized in that, The opening adjustment component includes a sub-adjustment component one; The sub-regulator is located in the first branch pipe. The control module controls the sub-regulator to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the central area of ​​the medium window body within a preset range.

11. The semiconductor processing apparatus for dielectric window temperature control according to claim 6, characterized in that, The opening adjustment component also includes a second sub-adjustment component; The second sub-regulator is located in the second branch pipe. The control module controls the second sub-regulator to adjust the exhaust volume of the heated gas according to the temperature information, so as to maintain the temperature of the edge area of ​​the medium window body within a preset range.

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