Hybrid bonding structure and method of forming the same

Abstract

The application discloses a hybrid bonding structure and a forming method thereof. The forming method comprises the following steps: providing a first bonding structure, which comprises a first substrate and a first bonding layer on the first substrate, the first bonding layer comprising a first metal layer, a first inorganic medium layer and a first organic medium layer, the first inorganic medium layer covering the side surface of the corresponding first metal layer in a circumferential direction, and the first organic medium layer covering the side surface of the first inorganic medium layer and filling the space between adjacent first inorganic medium layers; providing a second bonding structure, which comprises a second substrate and a second bonding layer on the second substrate, the second bonding layer comprising a second bonding medium layer and a second metal layer in the second bonding medium layer, and the top surface of the second bonding medium layer exposing the top surface of the second metal layer; and bonding the second bonding layer of the second bonding structure and the first bonding layer of the first bonding structure. The formed hybrid bonding structure has low particle sensitivity and good heat dissipation performance.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging, and more particularly to a hybrid bonding structure and a method for forming the same. Background Technology

[0002] Electronic devices are rapidly evolving towards higher integration, higher assembly density, and higher operating speeds. Hybrid bonding technology is a core technology in advanced semiconductor packaging, specifically 3D / 2.5D packaging. Hybrid bonding combines metal-to-metal bonding (e.g., Cu-Cu bonding) and dielectric-to-dielectric bonding in the same process step to achieve wafer-level or chip-level bonding. Eliminating the need for solder bumps, hybrid bonding directly integrates electrical interconnection, mechanical bonding, and thermal conduction between two wafers or chips, overcoming the connection density bottleneck of traditional bonding technologies and making it suitable for high-performance computing (HPC) and other high-end applications.

[0003] However, hybrid bonding structures formed using existing hybrid bonding processes are difficult to achieve both low particle sensitivity and good heat dissipation performance. Summary of the Invention

[0004] The purpose of this application is to provide a hybrid bonding structure and a method for forming the same, which combines low particle sensitivity and good heat dissipation performance, thereby improving bonding reliability and bonding strength.

[0005] To achieve the above objectives, firstly, embodiments of this application provide a method for forming a hybrid bonding structure, comprising:

[0006] A first bonding structure is provided, the first bonding structure including a first substrate and a first bonding layer located on the first substrate, the first bonding layer including: a first metal layer, a first inorganic dielectric layer and a first organic dielectric layer, the first metal layer being a plurality of discrete components, the first inorganic dielectric layer being a plurality of discrete components, each of the first inorganic dielectric layers covering the side surface of a corresponding first metal layer in the circumferential direction, the first organic dielectric layer covering the side surface of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers, and the thermal conductivity of the first inorganic dielectric layer being greater than the thermal conductivity of the first organic dielectric layer; A second bonding structure is provided, the second bonding structure including a second substrate and a second bonding layer located on the second substrate, the second bonding layer including a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer, the top surface of the second bonding dielectric layer exposing the top surface of the second metal layers; The second bonding layer of the second bonding structure is bonded to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to the corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

[0007] In some embodiments of this application, the top surface of the first inorganic dielectric layer is higher than the top surface of the first metal layer, and the top surface of the first organic dielectric layer is lower than the top surface of the first metal layer. The density of the first inorganic dielectric layer is greater than that of the first organic dielectric layer.

[0008] In some embodiments of this application, the formation process of the first bonding layer includes: Multiple discrete first inorganic dielectric layers are formed on the first substrate; A first organic dielectric material layer covering the first inorganic dielectric layer is formed on the first substrate; A first opening is formed in the first organic dielectric material layer and the corresponding first inorganic dielectric layer, and the first opening penetrates the first organic dielectric material layer and the first inorganic dielectric layer. A first metallic material layer is formed within the first opening; The first organic dielectric material layer, the first metal material layer, and the first inorganic dielectric layer are thinned using a chemical mechanical polishing process to form a first organic dielectric layer and a first metal layer. The top surface of the first inorganic dielectric layer is higher than the top surface of the first metal layer, and the top surface of the first organic dielectric layer is lower than the top surface of the first metal layer.

[0009] In some embodiments of this application, before forming the first metal material layer, the method further includes: A first seed layer is formed on the inner wall surface of the first opening and on the top surface of the first organic medium material layer; A first metal material layer is formed on the surface of the first seed layer using a first electroplating process, wherein the top surface of the first metal material layer inside the first opening is higher than the top surface of the first inorganic dielectric layer. When the first organic dielectric material layer, the first metal material layer, and the first inorganic dielectric layer are thinned using a chemical mechanical polishing process, the first seed layer on the top surface of the first organic dielectric material layer is simultaneously removed by polishing.

[0010] In some embodiments of this application, the material of the first inorganic dielectric layer includes silicon oxide, silicon nitride, or silicon carbide nitride.

[0011] In some embodiments of this application, the process of forming the first inorganic dielectric layer includes: A first inorganic dielectric material layer is formed on the top surface of the first substrate using a chemical vapor deposition process; Photolithography and etching processes are used to remove part of the first inorganic dielectric material layer to form multiple discrete first inorganic dielectric layers.

[0012] In some embodiments of this application, the material of the first organic dielectric material layer includes a photosensitive organic material.

[0013] In some embodiments of this application, the photosensitive organic material includes photosensitive polyimide resin, photosensitive polybenzoxazole resin, photosensitive benzocyclobutene resin, or photosensitive fluorinated polyimide resin.

[0014] In some embodiments of this application, the process of forming the first opening includes: The first opening includes a first sub-opening and a second sub-opening that are connected, with the first sub-opening located above the second sub-opening; A first sub-opening is formed in the first organic dielectric material layer using a photolithography process, and the first sub-opening exposes a portion of the top surface of the first inorganic dielectric layer. Using the first organic dielectric material layer as a mask, the first inorganic dielectric layer is etched along the first sub-opening to form a second sub-opening in the first inorganic dielectric layer.

[0015] In some embodiments of this application, the process of forming the first organic dielectric material layer includes: A first organic dielectric material layer is formed on the first substrate by using a spin coating process and a curing process, covering the sides of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers.

[0016] In some embodiments of this application, the second bonding dielectric layer includes a second inorganic dielectric layer and a second organic dielectric layer. The second inorganic dielectric layer is a plurality of discrete layers, each of which covers the side surface of a corresponding second metal layer in the circumferential direction, and the thermal conductivity of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

[0017] In some embodiments of this application, the bonding of the second bonding medium layer with the first organic medium layer and the first inorganic medium layer includes: the second organic medium layer being bonded to a corresponding first organic medium layer, and the second inorganic medium layer being bonded to a corresponding first inorganic medium layer.

[0018] In some embodiments of this application, the top surface of the second inorganic dielectric layer is higher than the top surface of the second metal layer, and the top surface of the second organic dielectric layer is lower than the top surface of the second metal layer; The density of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

[0019] In some embodiments of this application, the second bonding dielectric layer comprises only a third organic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the top surface of the third organic dielectric layer is lower than the top surface of the second metal layer.

[0020] In some embodiments of this application, the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer, including: The third organic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer; The third organic dielectric layer in the second bonding layer is bonded to the first inorganic dielectric layer in the first bonding layer.

[0021] In some embodiments of this application, the second bonding dielectric layer comprises only a third inorganic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the top surface of the third inorganic dielectric layer is higher than the top surface of the second metal layer.

[0022] In some embodiments of this application, the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer, including: The third inorganic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer; The third inorganic dielectric layer in the second bonding layer is bonded to the first inorganic dielectric layer in the first bonding layer.

[0023] In some embodiments of this application, the second bonding dielectric layer includes a fourth inorganic dielectric layer and a fourth organic dielectric layer. The fourth organic dielectric layer is a plurality of discrete layers, each of which circumferentially covers the side surface of a corresponding second metal layer. The fourth inorganic dielectric layer covers the side surface of the fourth organic dielectric layer and fills the space between adjacent fourth inorganic dielectric layers. The thermal conductivity of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer. The top surface of the fourth inorganic dielectric layer is higher than the top surface of the second metal layer, and the top surface of the fourth organic dielectric layer is lower than the top surface of the second metal layer. The density of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer.

[0024] In some embodiments of this application, the bonding of the second bonding medium layer with the first organic medium layer and the first inorganic medium layer includes: the fourth organic medium layer being bonded to the corresponding first inorganic medium layer, and the fourth inorganic medium layer being bonded to the corresponding first organic medium layer.

[0025] In some embodiments of this application, it also includes: The surface of the first substrate near the first bonding layer has a plurality of discrete first pads, and the plurality of discrete first pads are electrically connected to the corresponding first metal layer. The second substrate has a plurality of discrete second pads on the surface near the second bonding layer, and the plurality of discrete second pads are electrically connected to the corresponding second metal layer.

[0026] In some embodiments of this application, bonding the second bonding layer of the second bonding structure to the first bonding layer of the first bonding structure includes: The surfaces of the first bonding layer and the second bonding layer are activated using plasma, wherein the plasma material includes one of oxygen, argon or nitrogen. The second bonding structure is aligned and bonded to the first bonding structure. The bonding process employs a hybrid bonding process with a time range of 1-2 hours and a temperature range of 200℃-400℃.

[0027] Secondly, embodiments of this application also provide a hybrid bonding structure, including: A first bonding structure includes a first substrate and a first bonding layer located on the first substrate. The first bonding layer includes a first metal layer, a first inorganic dielectric layer, and a first organic dielectric layer. The first metal layer is a plurality of discrete components, and the first inorganic dielectric layer is a plurality of discrete components. Each first inorganic dielectric layer covers the side of a corresponding first metal layer in the circumferential direction. The first organic dielectric layer covers the side of the first inorganic dielectric layer and fills the space between adjacent first inorganic dielectric layers. The thermal conductivity of the first inorganic dielectric layer is greater than that of the first organic dielectric layer, and the density of the first inorganic dielectric layer is greater than that of the first organic dielectric layer. The second bonding structure includes a second substrate and a second bonding layer located on the second substrate. The second bonding layer includes a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer. The top surface of the second bonding dielectric layer exposes the top surface of the second metal layers. The second bonding layer of the second bonding structure is bonded to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to the corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

[0028] In some embodiments of this application, the second bonding dielectric layer includes a second inorganic dielectric layer and a second organic dielectric layer. The second inorganic dielectric layer is a plurality of discrete layers, and each second inorganic dielectric layer covers the side surface of a corresponding second metal layer in the circumferential direction. The second organic dielectric layer is bonded to a corresponding first organic dielectric layer, and the second inorganic dielectric layer is bonded to a corresponding first inorganic dielectric layer. The thermal conductivity of the second inorganic dielectric layer is greater than that of the second organic dielectric layer, and the density of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

[0029] In some embodiments of this application, the second bonding medium layer includes only a third organic medium layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the third organic medium layer in the second bonding layer is bonded to the first organic medium layer in the first bonding layer; and the third organic medium layer in the second bonding layer is bonded to the first inorganic medium layer in the first bonding layer.

[0030] In some embodiments of this application, the second bonding dielectric layer includes only a third inorganic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the third inorganic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer; the third inorganic dielectric layer in the second bonding layer is bonded to the first inorganic dielectric layer in the first bonding layer.

[0031] In some embodiments of this application, the second bonding dielectric layer includes a fourth inorganic dielectric layer and a fourth organic dielectric layer. The fourth organic dielectric layer is a plurality of discrete layers, each of which circumferentially covers the side surface of a corresponding second metal layer. The fourth inorganic dielectric layer covers the side surface of the fourth organic dielectric layer and fills the space between adjacent fourth inorganic dielectric layers. The fourth organic dielectric layer is bonded to a corresponding first inorganic dielectric layer, and the thermal conductivity of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer. The density of the fourth inorganic dielectric layer is also greater than that of the fourth organic dielectric layer.

[0032] In some embodiments of this application, the materials of the first metal layer and the second metal layer include one or more of Cu, Au, Al, Ag, Ti, W, Pt, and Ni.

[0033] In some embodiments of this application, it also includes: First pads, a plurality of discrete first pads are disposed on the surface of the first substrate near the first bonding layer, and the plurality of discrete first pads are electrically connected to the corresponding first metal layer. The second pads, a plurality of discrete second pads, are disposed on the surface of the second substrate near the second bonding layer, and the plurality of discrete second pads are electrically connected to the corresponding second metal layer.

[0034] The beneficial effects of this application are: The hybrid bonding structure and its formation method of this application, wherein the formation method includes: A first bonding structure is provided, the first bonding structure including a first substrate and a first bonding layer located on the first substrate, the first bonding layer including: a first metal layer, a first inorganic dielectric layer and a first organic dielectric layer, the first metal layer being a plurality of discrete components, the first inorganic dielectric layer being a plurality of discrete components, each of the first inorganic dielectric layers covering the side surface of a corresponding first metal layer in the circumferential direction, the first organic dielectric layer covering the side surface of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers, and the thermal conductivity of the first inorganic dielectric layer being greater than the thermal conductivity of the first organic dielectric layer; A second bonding structure is provided, the second bonding structure including a second substrate and a second bonding layer located on the second substrate, the second bonding layer including a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer, the top surface of the second bonding dielectric layer exposing the top surface of the second metal layers; the second bonding layer of the second bonding structure is bonded to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to a corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

[0035] In the method for forming the hybrid bonding structure described above in this application, each of the first inorganic dielectric layers in the first bonding structure circumferentially covers the side surface of a corresponding first metal layer. The first organic dielectric layer covers the side surface of the first inorganic dielectric layer and fills the space between adjacent first inorganic dielectric layers. On the one hand, the side surface of the first metal layer is covered by the first inorganic dielectric layer. Since the thermal conductivity of the first inorganic dielectric layer (and the first metal layer) is greater than that of the first organic dielectric layer, the heat generated by the first metal layer can be quickly conducted outward through the first inorganic dielectric layer when the first bonding structure and the second bonding structure interact, thereby ensuring the hybrid bonding structure... The first inorganic dielectric layer has better heat dissipation performance than the first organic dielectric layer. Furthermore, compared to the first organic dielectric layer, the first inorganic dielectric layer has higher density and stronger resistance to moisture, temperature, and radiation. It can better prevent the outward diffusion of metal elements from the first metal layer, reducing the risk of leakage or short circuit in the first metal layer, thereby improving the electrical performance of the hybrid bonding structure. On the other hand, by covering the sides of the first inorganic dielectric layer with the first organic dielectric layer and filling the space between adjacent first inorganic dielectric layers, the first organic dielectric layer can tolerate microparticle contamination during the bonding process, thereby reducing particle sensitivity during the hybrid bonding process and reducing particle-induced voids at the bonding interface, thus improving the bonding reliability and bonding strength of the hybrid bonding structure. In summary, the hybrid bonding structure obtained using the aforementioned formation method of this application combines low particle sensitivity with good heat dissipation performance. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort. In addition, in the following drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.

[0037] Figure 1 This is a schematic diagram of the structure after a first inorganic dielectric material layer is formed on the top surface of a first substrate in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 2 This is a schematic diagram of the structure after forming multiple discrete first inorganic dielectric layers in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 3 This is a schematic diagram of the structure after forming a first organic dielectric material layer covering a first inorganic dielectric layer in the method for forming a hybrid bonded structure provided in some embodiments of this application; Figure 4 This is a schematic diagram of the structure after the first sub-opening is formed in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 5 This is a schematic diagram of the structure after the second sub-opening is formed in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 6 This is a schematic diagram of the structure after the formation of the first metal layer in the method for forming the hybrid bonding structure provided in some embodiments of this application; Figure 7 This is a schematic diagram of the structure after the formation of the first bonding structure in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 8 This is a schematic diagram of the second bonding structure of the hybrid bonding structure provided in some embodiments of this application; Figure 9 This is a schematic diagram of the structure after the first bonding structure and the second bonding structure are aligned in the method for forming a hybrid bonding structure provided in some embodiments of this application; Figure 10 This is a schematic diagram of the structure after the formation of the hybrid bonding structure in some embodiments of this application; Figure 11 This is a schematic diagram of the second bonding structure of the hybrid bonding structure provided in some embodiments of this application; Figure 12 This is a schematic diagram of the hybrid bonding structure provided in some embodiments of this application; Figure 13 This is a schematic diagram of the second bonding structure of the hybrid bonding structure provided in some embodiments of this application; Figure 14 This is a schematic diagram of the hybrid bonding structure provided in some embodiments of this application; Figure 15 This is a schematic diagram of the second bonding structure of the hybrid bonding structure provided in some embodiments of this application; Figure 16 This is a schematic diagram of the hybrid bonding structure provided in some embodiments of this application; Figure 17 This is a schematic diagram of the process for forming a hybrid bonding structure provided in some embodiments of this application.

[0038] Explanation of reference numerals in the attached figures: 1: First substrate; 2: First bonding layer; 21: First metal layer; 22: First inorganic dielectric layer; 23: First organic dielectric layer; 24: First inorganic dielectric material layer; 25: First organic dielectric material layer; 26: First metal material layer; 3: First opening; 31: First sub-opening; 32: Second sub-opening; 4: Second substrate; 5: Second bonding layer; 51: Second metal layer; 52: Second inorganic dielectric layer; 53: Second organic dielectric layer; 61: First pad; 62: Second pad; 71: Third inorganic dielectric layer; 72: Third organic dielectric layer; 81: Fourth inorganic dielectric layer; 82: Fourth organic dielectric layer. Detailed Implementation

[0039] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0040] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0041] In the description of this application, it should be noted that the use of terms such as "first" and "second" to define objects (such as elements, components, regions, layers, doping types and / or parts) is merely for the purpose of distinguishing different objects, and is not necessarily used to describe a specific order or sequence, unless the context clearly indicates otherwise.

[0042] In the description of this application, it should be understood that the singular forms “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “compose” and / or “comprise” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0043] In the description of this application, it should also be noted that when a component is referred to as "on another component," "connected to another component," or "in contact with another component," it can mean not only that a component is directly on, directly connected to, or directly in contact with the other component, but also that an intermediate component can be inserted between the two components. Furthermore, "connection" includes not only fixed connections but also detachable connections or integral connections. Similarly, when an element is referred to as "electrically connected," "electrically contacted," "electrically coupled," or "electrically coupled to" another element, the two elements can be in direct electrical contact or electrical coupling, or they can be in electrical contact or electrical coupling through an intermediate component.

[0044] In the description of this application, it should also be noted that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0045] Furthermore, in the description of this application, spatial relation terms such as "below," "under," "below," "below," "below," "above," "on the upper surface of," "above," etc., can be used to describe the spatial positional relationship between one element or feature shown in the figures and other elements or features. It should be understood that spatial relation terms, in addition to the orientation shown in the figures, also include different orientations of elements or features in use and operation. For example, if an element or feature in the figures is flipped or inverted, an element or feature described as "below" or "below" other elements or features will be oriented "above" other elements or features. Furthermore, elements may also include other orientations (e.g., rotated by an angle or other orientations).

[0046] The structure of the embodiments of this application should not be limited to the specific shape shown in the accompanying drawings, but includes shape deviations due to, for example, manufacturing techniques.

[0047] It is understood that in some of the accompanying drawings of this application, adjacent films with the same processing material are drawn as connected to make them resemble the actual structure.

[0048] Existing hybrid bonding processes utilize bonding media materials including organic materials (such as polyimide resin) or inorganic materials (such as silicon oxide). When using inorganic materials like silicon oxide for hybrid bonding, although these materials possess high thermal conductivity, the bonding interface is highly sensitive to particulate contamination. Particulate contamination easily leads to voids at the bonding interface, affecting the bond strength. Conversely, while using organic materials like polyimide effectively mitigates particulate contamination, the lower thermal conductivity of organic materials becomes a significant factor limiting device heat dissipation performance. Therefore, hybrid bonding structures formed using existing hybrid bonding processes struggle to simultaneously achieve low particulate sensitivity and good heat dissipation performance.

[0049] Therefore, this application first provides a method for forming a hybrid bonding structure. Figure 17 This is a flowchart illustrating the method for forming hybrid bonding structures provided in some embodiments of this application. (Refer to...) Figure 17 The method for forming the hybrid bonding structure includes the following steps: Step S101: Provide a first bonding structure, the first bonding structure including a first substrate and a first bonding layer located on the first substrate, the first bonding layer including: a first metal layer, a first inorganic dielectric layer and a first organic dielectric layer, the first metal layer being a plurality of discrete components, the first inorganic dielectric layer being a plurality of discrete components, each of the first inorganic dielectric layers covering the side of a corresponding first metal layer in the circumferential direction, the first organic dielectric layer covering the side of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers, and the thermal conductivity of the first inorganic dielectric layer being greater than the thermal conductivity of the first organic dielectric layer; Step S102, providing a second bonding structure, the second bonding structure including a second substrate and a second bonding layer located on the second substrate, the second bonding layer including a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer, the top surface of the second bonding dielectric layer exposing the top surface of the second metal layer; Step S103: Bond the second bonding layer of the second bonding structure to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to the corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

[0050] The method for forming the aforementioned hybrid bonding structure will be described in detail below with reference to the accompanying drawings in some embodiments.

[0051] First, refer to Figure 17 In conjunction with references Figure 7In step S101, a first bonding structure is provided. The first bonding structure includes a first substrate 1 and a first bonding layer 2 located on the first substrate 1. The first bonding layer 2 includes a first metal layer 21, a first inorganic dielectric layer 22, and a first organic dielectric layer 23. The first metal layer 21 is a plurality of discrete components, and the first inorganic dielectric layer 22 is a plurality of discrete components. Each first inorganic dielectric layer 22 covers the side of a corresponding first metal layer 21 in the circumferential direction. The first organic dielectric layer 23 covers the side of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22. The thermal conductivity of the first inorganic dielectric layer 22 is greater than that of the first organic dielectric layer 23.

[0052] In the first bonding structure, each of the first inorganic dielectric layers 22 circumferentially covers the side of a corresponding first metal layer 21. The first organic dielectric layer 23 covers the side of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22. On the one hand, since the side of the first metal layer 21 is covered by the first inorganic dielectric layer 22, and the thermal conductivity of the first inorganic dielectric layer 22 (and the first metal layer 21) is greater than that of the first organic dielectric layer 23, when the first bonding structure and the second bonding structure interact, the heat generated by the first metal layer 21 can be conducted outward more quickly through the first inorganic dielectric layer 22, so as to ensure the heat dissipation performance of the hybrid bonding structure. On the other hand, by covering the side of the first inorganic dielectric layer 22 with the first organic dielectric layer 23 and filling the space between adjacent first inorganic dielectric layers 22, the first organic dielectric layer 23 can tolerate microparticle contamination during the bonding process, thereby reducing particle sensitivity during the hybrid bonding process, reducing voids at the bonding interface caused by particles, and improving the bonding reliability and bonding strength of the hybrid bonding structure. In summary, the first bonded structure obtained by the aforementioned formation method of this application has both low particle sensitivity and good heat dissipation performance.

[0053] The first bonding structure includes a first substrate 1 and a first bonding layer 2 located on the first substrate 1. The first substrate 1 can be one of a silicon substrate, wafer, chip, or substrate with a redistribution layer (RDL) and metal pads fabricated on its surface. The first bonding layer 2 includes a first metal layer 21, a first inorganic dielectric layer 22, and a first organic dielectric layer 23. After the first bonding structure is bonded to the second bonding structure, multiple first metal layers 21 are discretely designed to realize electrical signal transmission. The first inorganic dielectric layer 22 covers the side surface of the first metal layer 21 circumferentially. The dielectric layer 22 is used to improve the heat dissipation efficiency of the first metal layer 21. After the first bonding layer 2 and the second bonding layer 5 are pre-bonded, the first inorganic dielectric layer 22 and the second bonding dielectric layer provide a closed oxygen-free environment for the first metal layer 21 and the second metal layer 51 to prevent oxidation. The first organic dielectric layer 23 fills the gap between the first inorganic dielectric layer 22, improves the structural integrity of the first bonding layer 2 itself, reduces particle contamination of the first inorganic dielectric layer 22, reduces the generation of voids at the bonding interface, improves the yield of the bonding interface, and is compatible with the small size deviations caused by particle contamination.

[0054] In some embodiments, reference Figure 7 The top surface of the first inorganic dielectric layer 22 is higher than the top surface of the first metal layer 21, and the top surface of the first organic dielectric layer 23 is lower than the top surface of the first metal layer 21. The density of the first inorganic dielectric layer 22 is greater than that of the first organic dielectric layer 23.

[0055] During the bonding process, because the coefficient of thermal expansion of the first inorganic dielectric layer 22 is less than that of the first metal layer 21, and the coefficient of thermal expansion of the first metal layer 21 is less than that of the first organic dielectric layer 23, the expansion rate and amount of the first inorganic dielectric layer 22 are less than those of the first metal layer 21, and the expansion rate and amount of the first metal layer 21 are less than those of the first organic dielectric layer 23. If the top surfaces of all three are flush, or if the top surface of the first inorganic dielectric layer 22 is higher than the top surface of the first metal layer 21, the first inorganic dielectric layer 22 and the second bonding layer 5 cannot effectively contact and bond during the bonding process. This will lead to the mixed bond... In the event of bonding failure or ineffectiveness of the bonding structure, in this application, when the top surface of the first inorganic dielectric layer 22 is higher than the top surface of the first metal layer 21 and the top surface of the first organic dielectric layer 23 is lower than the top surface of the first metal layer 21, during the bonding process, the height of the expanded top surface of the first organic dielectric layer 23 is consistent with the height of the expanded top surface of the first metal layer 21. Therefore, when the first metal layer 21 contacts and bonds with the second metal layer 51, the first inorganic dielectric layer 22 and the first organic dielectric layer 23 can also contact and bond with the second bonding dielectric layer, thereby improving the bonding strength, reducing the lateral displacement of the first metal layer 21, improving the accuracy of the bonding position of the first metal layer 21 and the second metal layer 51, and further improving the bonding strength.

[0056] The density of the first inorganic dielectric layer 22 is greater than that of the first organic dielectric layer 23. The higher density of the first inorganic dielectric layer 22 results in stronger resistance to moisture, temperature, and radiation, and it can better prevent the metal elements in the first metal layer 21 from diffusing outward, reducing the risk of leakage or short circuit in the first metal layer 21, thereby improving the electrical performance of the hybrid bonding structure. The sides of the first metal layer 21 are first covered by the first inorganic dielectric layer 22 to prevent the first metal layer 21 from being oxidized. Then, the first organic dielectric layer 23 covers the sides of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22. The first organic dielectric layer 23 can tolerate microparticle contamination during the bonding process, reducing voids at the bonding interface caused by particles, and improving the bonding reliability and bonding strength of the hybrid bonding structure.

[0057] In some embodiments, the process of forming the first inorganic dielectric layer 22 includes: refer to Figure 1 A first inorganic dielectric material layer 24 is formed on the top surface of the first substrate 1 using a chemical vapor deposition process. refer to Figure 2A portion of the first inorganic dielectric material layer 24 is removed using photolithography and etching processes to form multiple discrete first inorganic dielectric layers 22.

[0058] In some embodiments, the formation process of the first bonding layer 2 includes: refer to Figure 2 A plurality of discrete first inorganic dielectric layers 22 are formed on the first substrate 1; refer to Figure 3 A first organic dielectric material layer 25 covering the first inorganic dielectric layer 22 is formed on the first substrate 1; refer to Figure 5 A first opening 3 is formed in the first organic dielectric material layer 25 and the corresponding first inorganic dielectric layer 22, and the first opening 3 penetrates the first organic dielectric material layer 25 and the first inorganic dielectric layer 22. refer to Figure 6 A first metal material layer 26 is formed within the first opening 3; refer to Figure 6 The first organic dielectric material layer 25, the first metal material layer 26, and the first inorganic dielectric layer 22 are thinned using a chemical mechanical polishing process to form a first organic dielectric layer 23 and a first metal layer 21. The top surface of the first inorganic dielectric layer 22 is higher than the top surface of the first metal layer 21, and the top surface of the first organic dielectric layer 23 is lower than the top surface of the first metal layer 21.

[0059] After the first organic dielectric material layer 25, the first metal material layer 26 and the first inorganic dielectric layer 22 are thinned by chemical mechanical polishing, the remaining first organic dielectric material layer 25 is used as the first organic dielectric layer 23 and the remaining first metal material layer 26 is used as the first metal layer 21.

[0060] In some embodiments, before forming the first metal material layer 26, the method further includes: A first seed layer (not shown in the figure) is formed on the inner wall surface of the first opening 3 and the top surface of the first organic medium material layer 25. A first metal material layer 26 is formed on the surface of the first seed layer using a first electroplating process, and the top surface of the first metal material layer 26 inside the first opening 3 is higher than the top surface of the first inorganic dielectric layer 22. When the first organic dielectric material layer 25, the first metal material layer 26 and the first inorganic dielectric layer 22 are thinned using a chemical mechanical polishing process, the first seed layer on the top surface of the first organic dielectric material layer 25 is simultaneously removed by polishing.

[0061] In one example, the first seed layer includes a seed crystal layer and a barrier layer. The barrier layer is formed on the first substrate 1 and the first organic dielectric material layer 25 by one of chemical vapor deposition, physical vapor deposition, or atomic layer deposition. The barrier layer is Ti, TiN, Ta, or TaN. The barrier layer is a dense, continuous thin film that prevents metal atoms of the subsequently formed first metal material layer 26 from diffusing to the underlying first substrate 1 and the surrounding first inorganic dielectric layer 22. The seed crystal layer is formed on the side of the barrier layer away from the first substrate 1 using a physical vapor deposition process. The seed crystal layer is made of metal. The seed crystal layer provides a conductive path for the subsequent first electroplating process and serves as a seed layer for metal growth during the first electroplating process, ensuring the uniform and complete formation of the first metal layer 21.

[0062] In some embodiments, the material of the first inorganic dielectric layer 22 includes silicon oxide, silicon nitride, or silicon carbide nitride.

[0063] The first inorganic dielectric layer 22 is made of silicon oxide, silicon nitride, or silicon carbide nitride. Silicon oxide has a thermal conductivity of 1.0–1.5 W / (m·K) and a density of 2.2–2.4 g / cm³ at room temperature; silicon nitride has a thermal conductivity of 20–30 W / (m·K) at room temperature. Silicon carbide (K) has a density of 2.8–3.0 g / cm³; its thermal conductivity at room temperature is 10–15 W / (m²). K), with a density of 2.5~2.7 g / cm³; while in the prior art, an organic dielectric layer is used to cover the first metal layer 21, and the thermal conductivity of the organic material in the organic dielectric layer at room temperature is generally 0.10~0.20 W / (m²). With a density of approximately 1.4~1.5 g / cm³, organic dielectric materials are not as effective as the first inorganic dielectric layer 22 in terms of heat transfer and preventing the outward diffusion of metal elements. Therefore, the first inorganic dielectric layer 22 is applied to the side of the first metal layer 21. On the one hand, this allows the heat generated by the first metal layer 21 to be quickly conducted outward through the first inorganic dielectric layer 22 when the first and second bonded structures interact, thus ensuring the heat dissipation performance of the hybrid bonded structure. On the other hand, the high density of the first inorganic dielectric layer 22 results in extremely low internal porosity, which effectively prevents the outward diffusion of metal elements in the first metal layer 21, reducing the risk of leakage or short circuit in the first metal layer 21, thereby improving the electrical performance of the hybrid bonded structure.

[0064] In some embodiments, the material of the first organic dielectric material layer 25 includes a photosensitive organic material.

[0065] In some embodiments, the photosensitive organic material includes a photosensitive polyimide resin, a photosensitive polybenzoxazole resin, a photosensitive benzocyclobutene resin, or a photosensitive fluorinated polyimide resin.

[0066] On the one hand, when the aforementioned first organic dielectric layer 23 is used for subsequent processing to form a first opening 3 in the first organic dielectric material layer 25 and the corresponding first inorganic dielectric layer 22, the material of the first organic dielectric material layer 25 is a photosensitive organic material. The first opening 3 is directly processed by photolithography, exposure and development, eliminating the need for mask preparation using non-photosensitive materials, dry etching and other steps, improving the overall preparation efficiency of the first bonding layer 2. Dry etching is not required, protecting the surrounding components from process damage and improving the preparation yield of the first bonding layer 2. On the other hand, the high fluidity of the photosensitive organic material allows the formation of a first organic dielectric material layer 25 on the first substrate 1 using spin coating and curing processes. This layer covers the side of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22. The subsequently formed first organic dielectric layer 23 can tolerate microparticle contamination during the bonding process, thereby reducing particle sensitivity during the mixed bonding process and reducing bonding interface voids caused by particles, thus improving the bonding reliability and bonding strength of the mixed bonding structure.

[0067] In some embodiments, the process of forming the first opening 3 includes: The first opening 3 includes a first sub-opening 31 and a second sub-opening 32 that are connected, with the first sub-opening 31 located above the second sub-opening 32; refer to Figure 4 A first sub-opening 31 is formed in the first organic dielectric material layer 25 using photolithography, and the first sub-opening 31 exposes part of the top surface of the first inorganic dielectric layer 22. refer to Figure 5 Using the first organic dielectric material layer 25 as a mask, the first inorganic dielectric layer 22 is etched along the first sub-opening 31 to form a second sub-opening 32 in the first inorganic dielectric layer 22.

[0068] In some embodiments, the process of forming the first organic dielectric material layer 25 includes: A first organic dielectric material layer 25 is formed on the first substrate 1 using a spin coating process and a curing process. This layer covers the sides of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22.

[0069] In one example, the curing process is performed at a temperature of 150°C to 220°C.

[0070] Next, refer to Figure 17In conjunction with references Figure 8 In step S102, a second bonding structure is provided. The second bonding structure includes a second substrate 4 and a second bonding layer 5 located on the second substrate 4. The second bonding layer 5 includes a second bonding dielectric layer and a plurality of discrete second metal layers 51 located in the second bonding dielectric layer. The top surface of the second bonding dielectric layer exposes the top surface of the second metal layers 51.

[0071] The second bonding structure includes a second substrate 4 and a second bonding layer 5 located on the second substrate 4. The second substrate 4 can be one of a silicon substrate, wafer, chip, or substrate with a surface redistribution layer (RDL) and metal pads. The second bonding layer 5 includes a second bonding dielectric layer and a plurality of discrete second metal layers 51 located in the second bonding dielectric layer. After the first bonding structure and the second bonding structure are bonded, the second metal layer 51 is used to realize electrical signal transmission. The discrete design of the plurality of second metal layers 51 is used to improve the high-density interconnect density of the hybrid bonding structure. The second bonding dielectric layer covers the side of the second metal layer 51. The second dielectric layer fixes the position of the second metal layer 51 to prevent the second metal layer 51 from shifting. The top surface of the second bonding dielectric layer is exposed. During bonding, the second bonding dielectric layer and the first bonding layer 2 are easily aligned, reducing the risk of misalignment and improving the yield of the hybrid bonding structure.

[0072] In some embodiments, reference Figure 8 The second bonding dielectric layer includes a second inorganic dielectric layer 52 and a second organic dielectric layer 53. The second inorganic dielectric layer 52 is a plurality of discrete layers, and each second inorganic dielectric layer 52 covers the side of a corresponding second metal layer 51 in the circumferential direction. The thermal conductivity of the second inorganic dielectric layer 52 is greater than that of the second organic dielectric layer 53.

[0073] In the second bonding structure, each of the second inorganic dielectric layers 52 circumferentially covers the side of a corresponding second metal layer 51. The second organic dielectric layer 53 covers the side of the second inorganic dielectric layer 52 and fills the space between adjacent second inorganic dielectric layers 52. On the one hand, since the side of the second metal layer 51 is covered by the second inorganic dielectric layer 52, and the thermal conductivity of the second inorganic dielectric layer 52 (and the second metal layer 51) is greater than that of the second organic dielectric layer 53, when the second bonding structure and the first bonding structure interact, the heat generated by the second metal layer 51 can be conducted outward more quickly through the second inorganic dielectric layer 52, thus ensuring the heat dissipation performance of the hybrid bonding structure. On the other hand, by covering the side of the second inorganic dielectric layer 52 with the second organic dielectric layer 53 and filling the space between adjacent second inorganic dielectric layers 52, the second organic dielectric layer 53 can tolerate microparticle contamination during the bonding process, thereby reducing particle sensitivity during the hybrid bonding process, reducing particle-induced voids at the bonding interface, and improving the bonding reliability and bonding strength of the hybrid bonding structure. In summary, the second bonded structure obtained by the aforementioned formation method of this application has both low particle sensitivity and good heat dissipation performance.

[0074] In some embodiments, the bonding of the second bonding medium layer with the first organic medium layer 23 and the first inorganic medium layer 22 includes: the second organic medium layer 53 being bonded to the corresponding first organic medium layer 23, and the second inorganic medium layer 52 being bonded to the corresponding first inorganic medium layer 22.

[0075] The second inorganic dielectric layer 52 is bonded to the corresponding first inorganic dielectric layer 22. The first inorganic dielectric layer 22 and the second inorganic dielectric layer 52 are made of the same material. Through precise corresponding bonding, a supporting skeleton of the hybrid bonding structure is formed. The first inorganic dielectric layer 22 and the second inorganic dielectric layer 52 cover the first metal layer 21 and the second metal layer 51 to form an oxygen-free environment, preventing metal oxidation. Combining the advantages of the high thermal conductivity of inorganic dielectrics, the heat dissipation area and performance are improved. The second organic dielectric layer 53 is bonded to the corresponding first organic dielectric layer 23. The first organic dielectric layer 23 and the second organic dielectric layer 53 are made of the same material. Through precise corresponding bonding, the low Young's modulus and particle tolerance of organic dielectrics are utilized to tolerate small dimensional deviations and particle contamination during the bonding process, reducing bonding voids between the first inorganic dielectric layer 22 and the second inorganic dielectric layer 52. At the same time, a continuous organic dielectric buffer layer is formed to alleviate thermal stress and structural stress and avoid interlayer cracking.

[0076] Compared with existing hybrid bonding processes that use only organic materials (such as polyimide resin) or inorganic materials (such as silicon oxide) as the bonding medium, after the first metal layer 21 and the second metal layer 51 are bonded, the first metal layer 21 and the second metal layer 51 are sequentially covered with an inorganic medium layer (the first inorganic medium layer 22 and the second inorganic medium layer 52 are bonded) and an organic medium layer (the first organic medium layer 23 and the second organic medium layer 53 are bonded), so that the hybrid bonding structure of this application has both low particle sensitivity and good heat dissipation performance.

[0077] In some embodiments, the top surface of the second inorganic dielectric layer 52 is higher than the top surface of the second metal layer 51, and the top surface of the second organic dielectric layer 53 is lower than the top surface of the second metal layer 51. The density of the second inorganic dielectric layer 52 is greater than that of the second organic dielectric layer 53.

[0078] During the bonding process, because the coefficient of thermal expansion of the second inorganic dielectric layer 52 is smaller than that of the second metal layer 51, and the coefficient of thermal expansion of the second metal layer 51 is smaller than that of the second organic dielectric layer 53, the expansion rate and amount of the second inorganic dielectric layer 52 are less than those of the second metal layer 51, and the expansion rate and amount of the second metal layer 51 are less than those of the second organic dielectric layer 53. If the top surfaces of all three are flush, or if the top surface of the second inorganic dielectric layer 52 is higher than the top surface of the second metal layer 51, the second inorganic dielectric layer 52 and the first inorganic dielectric layer 22 will not be able to effectively contact and bond during the bonding process. This will lead to the failure of the bonding in the hybrid bonding structure. In this application, when the top surface of the second inorganic dielectric layer 52 is higher than the top surface of the second metal layer 51, and the top surface of the second organic dielectric layer 53 is lower than the top surface of the second metal layer 51, during the bonding process, the height of the expanded top surface of the second organic dielectric layer 53 is consistent with the height of the expanded top surface of the second metal layer 51. Therefore, when the first metal layer 21 contacts and bonds with the second metal layer 51, the first inorganic dielectric layer 22 and the first organic dielectric layer 23 can also contact and bond with the second inorganic dielectric layer 52 and the second organic dielectric layer 53 respectively, thereby improving the bonding strength, reducing the lateral displacement of the second metal layer 51, improving the accuracy of the bonding position of the first metal layer 21 and the second metal layer 51, and further improving the bonding strength.

[0079] The density of the second inorganic dielectric layer 52 is greater than that of the second organic dielectric layer 53. The higher density of the second inorganic dielectric layer 52 results in stronger resistance to moisture, temperature, and radiation, and it can better prevent the metal elements in the second metal layer 51 from diffusing outward, reducing the risk of leakage or short circuit in the second metal layer 51, thereby improving the electrical performance of the hybrid bonding structure. The sides of the second metal layer 51 are first covered by the second inorganic dielectric layer 52 to prevent the second metal layer 51 from being oxidized. Then, the second organic dielectric layer 53 covers the sides of the second inorganic dielectric layer 52 and fills the space between adjacent second inorganic dielectric layers 52. The second organic dielectric layer 53 can tolerate microparticle contamination during the bonding process, reducing voids at the bonding interface caused by particles, and improving the bonding reliability and bonding strength of the hybrid bonding structure.

[0080] In some embodiments, reference Figure 11 The second bonding medium layer includes only a third organic medium layer 72, which fills the space between adjacent second metal layers 51 and covers the side surface of each second metal layer 51 circumferentially, wherein the top surface of the third organic medium layer 72 is lower than the top surface of the second metal layer 51.

[0081] The third organic dielectric layer 72 fills the space between adjacent second metal layers 51 and covers the side surface of each second metal layer 51 circumferentially. The third organic dielectric layer 72 circumferentially covers the side surface of the second metal layers 51 to prevent the second metal layers 51 from shifting during bonding. The third organic dielectric layer 72 fills the space between adjacent second metal layers 51, making the second bonding layer 5 a stable whole and reducing the impact of vibration on the second bonding structure. The material of the third organic dielectric layer 72 has the characteristic of low Young's modulus, which tolerates small dimensional deviations and particle contamination during the bonding process, reduces bonding voids between the third organic dielectric layer 72 and the first inorganic dielectric layer 22 and the first organic dielectric layer 23 in the first bonding layer 2, and forms a continuous organic dielectric buffer layer to effectively buffer the structural stress and thermal stress generated by temperature changes during the bonding process and avoid interlayer cracking.

[0082] In some embodiments, reference Figure 12 The second bonding dielectric layer is bonded to the first organic dielectric layer 23 and the first inorganic dielectric layer 22, including: The third organic dielectric layer 72 in the second bonding layer is bonded to the first organic dielectric layer 23 in the first bonding layer 2; The third organic dielectric layer 72 in the second bonding layer is bonded to the first inorganic dielectric layer 22 in the first bonding layer 2.

[0083] In some embodiments, reference Figure 13 The second bonding dielectric layer includes only a third inorganic dielectric layer 71, which fills the space between adjacent second metal layers 51 and covers the side surface of each second metal layer 51 circumferentially, wherein the top surface of the third inorganic dielectric layer 71 is higher than the top surface of the second metal layer 51.

[0084] The third inorganic dielectric layer 71 fills the space between adjacent second metal layers 51 and covers the side surface of each second metal layer 51 circumferentially. The third inorganic dielectric layer 71 circumferentially covers the side surface of the second metal layers 51 to prevent the second metal layers 51 from shifting during bonding. The third inorganic dielectric layer 71 fills the space between adjacent second metal layers 51, making the second bonding layer 5 form a stable whole and reducing the impact of vibration on the second bonding structure. The material of the third inorganic dielectric layer 71 has high thermal conductivity. The third inorganic dielectric layer 71 is bonded to the first inorganic dielectric layer 22 and the first organic dielectric layer 23 of the first bonding layer 2 to form a continuous thermally conductive network, which quickly dissipates the heat generated by the first metal layer 21 and the second metal layer 51 during operation, effectively isolates oxygen and pollutants, and prevents the first metal layer 21 and the second metal layer 51 from oxidizing. The third inorganic dielectric layer 71 utilizes the high hardness and high rigidity of the inorganic dielectric to provide a rigid skeleton support for the second bonding layer 5 and the hybrid bonding structure.

[0085] In some embodiments, reference Figure 14 The second bonding dielectric layer is bonded to the first organic dielectric layer 23 and the first inorganic dielectric layer 22, including: The third inorganic dielectric layer 71 in the second bonding layer is bonded to the first organic dielectric layer 23 in the first bonding layer 2; The third inorganic dielectric layer 71 in the second bonding layer is bonded to the first inorganic dielectric layer 22 in the first bonding layer 2.

[0086] In some embodiments, reference Figure 15The second bonding dielectric layer includes a fourth inorganic dielectric layer 81 and a fourth organic dielectric layer 82. The fourth organic dielectric layer 82 is a plurality of discrete layers, each of which circumferentially covers one side of a corresponding second metal layer 51. The fourth inorganic dielectric layer 81 covers the side of the fourth organic dielectric layer 82 and fills the space between adjacent fourth inorganic dielectric layers 81. The thermal conductivity of the fourth inorganic dielectric layer 81 is greater than that of the fourth organic dielectric layer 82. The top surface of the fourth inorganic dielectric layer 81 is higher than the top surface of the second metal layer 51, and the top surface of the fourth organic dielectric layer 82 is lower than the top surface of the second metal layer 51. The density of the fourth inorganic dielectric layer 81 is greater than that of the fourth organic dielectric layer 82.

[0087] In some embodiments, reference Figure 16 The second bonding medium layer is bonded to the first organic medium layer 23 and the first inorganic medium layer 22, including: the fourth organic medium layer 82 is bonded to the corresponding first inorganic medium layer 22, and the fourth inorganic medium layer 81 is bonded to the corresponding first organic medium layer 23.

[0088] Finally, refer to Figure 17 In conjunction with references Figure 9 and Figure 10 In step S103, the second bonding layer 5 of the second bonding structure is bonded to the first bonding layer 2 of the first bonding structure, wherein the second metal layer 51 in the second bonding layer 5 is bonded to the corresponding first metal layer 21 in the first bonding layer 2, and the second bonding dielectric layer is bonded to the first organic dielectric layer 23 and the first inorganic dielectric layer 22.

[0089] The second metal layer 51 in the second bonding layer 5 is bonded to the corresponding first metal layer 21 in the first bonding layer 2 to form a dielectric-free conductive channel, ensuring efficient transmission of electrical signals. Multiple discrete first metal layers 21 are bonded to the second metal layer 51 to avoid crosstalk and interference of multi-channel electrical signals, thereby improving the stability of the hybrid bonding structure.

[0090] In some embodiments, it also includes: The first substrate 1 has a plurality of discrete first pads 61 on the surface near the first bonding layer 2, and the plurality of discrete first pads 61 are electrically connected to the corresponding first metal layer 21. The second substrate 4 has a plurality of discrete second pads 62 on the surface near the second bonding layer 5, and the plurality of discrete second pads 62 are electrically connected to the corresponding second metal layer 51.

[0091] In one example, the materials of the first pad 61 and the second pad 62 are metals, specifically one or more of aluminum, copper, nickel, tin, titanium, tungsten, platinum, chromium, tantalum, gold, and silver.

[0092] In some embodiments, bonding the second bonding layer 5 of the second bonding structure to the first bonding layer 2 of the first bonding structure includes: The surfaces of the first bonding layer 2 and the second bonding layer 5 are activated using plasma, wherein the plasma material includes one of oxygen, argon or nitrogen. The second bonding structure is aligned and bonded to the first bonding structure. The bonding process employs a hybrid bonding process with a time range of 1-2 hours and a temperature range of 200℃-400℃.

[0093] This application also provides a hybrid bonding structure, see reference. Figure 10 ,include: A first bonding structure includes a first substrate 1 and a first bonding layer 2 located on the first substrate 1. The first bonding layer 2 includes a first metal layer 21, a first inorganic dielectric layer 22, and a first organic dielectric layer 23. The first metal layer 21 is a plurality of discrete components, and the first inorganic dielectric layer 22 is a plurality of discrete components. Each first inorganic dielectric layer 22 covers the side of a corresponding first metal layer 21 circumferentially. The first organic dielectric layer 23 covers the side of the first inorganic dielectric layer 22 and fills the space between adjacent first inorganic dielectric layers 22. The thermal conductivity of the first inorganic dielectric layer 22 is greater than that of the first organic dielectric layer 23, and the density of the first inorganic dielectric layer 22 is greater than that of the first organic dielectric layer 23. The second bonding structure includes a second substrate 4 and a second bonding layer 5 located on the second substrate 4. The second bonding layer 5 includes a second bonding dielectric layer and a plurality of discrete second metal layers 51 located in the second bonding dielectric layer. The top surface of the second bonding dielectric layer exposes the top surface of the second metal layers 51. The second bonding layer 5 of the second bonding structure is bonded to the first bonding layer 2 of the first bonding structure, wherein the second metal layer 51 in the second bonding layer 5 is bonded to the corresponding first metal layer 21 in the first bonding layer 2, and the second bonding dielectric layer is bonded to the first organic dielectric layer 23 and the first inorganic dielectric layer 22.

[0094] In some embodiments, reference Figure 10The second bonding dielectric layer includes a second inorganic dielectric layer 52 and a second organic dielectric layer 53. The second inorganic dielectric layer 52 is a plurality of discrete components. Each second inorganic dielectric layer 52 covers the side surface of a corresponding second metal layer 51 in the circumferential direction. The second organic dielectric layer 53 is bonded to a corresponding first organic dielectric layer 23, and the second inorganic dielectric layer 52 is bonded to a corresponding first inorganic dielectric layer 22. The thermal conductivity of the second inorganic dielectric layer 52 is greater than that of the second organic dielectric layer 53, and the density of the second inorganic dielectric layer 52 is greater than that of the second organic dielectric layer 53.

[0095] In some embodiments, reference Figure 12 The second bonding medium layer includes only a third organic medium layer 72, which fills the space between adjacent second metal layers 51 and covers the side of each second metal layer 51 circumferentially. The third organic medium layer 72 in the second bonding layer 5 is bonded to the first organic medium layer 23 in the first bonding layer 2; the third organic medium layer 72 in the second bonding layer 5 is bonded to the first inorganic medium layer 22 in the first bonding layer 2.

[0096] In some embodiments, reference Figure 14 The second bonding dielectric layer includes only a third inorganic dielectric layer 71, which fills the space between adjacent second metal layers 51 and covers the side of each second metal layer 51 circumferentially. The third inorganic dielectric layer 71 in the second bonding layer 5 is bonded to the first organic dielectric layer 23 in the first bonding layer 2; the third inorganic dielectric layer 71 in the second bonding layer 5 is bonded to the first inorganic dielectric layer 22 in the first bonding layer 2.

[0097] In some embodiments, reference Figure 16 The second bonding dielectric layer includes a fourth inorganic dielectric layer 81 and a fourth organic dielectric layer 82. The fourth organic dielectric layer 82 is a plurality of discrete layers, each of which circumferentially covers the side surface of a corresponding second metal layer 51. The fourth inorganic dielectric layer 81 covers the side surface of the fourth organic dielectric layer 82 and fills the space between adjacent fourth inorganic dielectric layers 81. The fourth organic dielectric layer 82 is bonded to a corresponding first inorganic dielectric layer 22, and the fourth inorganic dielectric layer 81 is bonded to a corresponding first organic dielectric layer 23. The thermal conductivity of the fourth inorganic dielectric layer 81 is greater than that of the fourth organic dielectric layer 82, and the density of the fourth inorganic dielectric layer 81 is greater than that of the fourth organic dielectric layer 82.

[0098] In some embodiments, the materials of the first metal layer 21 and the second metal layer 51 include one or more of Cu, Au, Al, Ag, Ti, W, Pt, and Ni.

[0099] In some embodiments, it also includes: First pad 61, a plurality of discrete first pads 61 are disposed on the surface of the first substrate 1 near the first bonding layer 2, and the plurality of discrete first pads 61 are electrically connected to the corresponding first metal layer 21. Second pad 62, a plurality of discrete second pads 62 are disposed on the surface of the second substrate 4 near the second bonding layer 5, and the plurality of discrete second pads 62 are electrically connected to the corresponding second metal layer 51.

[0100] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0101] It should be noted that, unless otherwise specified, the features in the different embodiments of this application described above can be combined with each other. Furthermore, in each of the above embodiments, the focus is on describing the differences from other embodiments; other specific descriptions of the same / similar parts between the embodiments can be referred to (or referenced) interchangeably. In addition, descriptions of well-known components and technologies have been omitted in the above description to avoid unnecessarily obscuring the concepts of this application.

[0102] Although this application has been disclosed above with reference to preferred embodiments, it is not intended to limit this application. Any person skilled in the art can make possible changes and modifications to the technical solutions of this application by utilizing the methods and techniques disclosed above without departing from the spirit and scope of this application. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall fall within the protection scope of the technical solutions of this application.

Claims

1. A method for forming a hybrid bonding structure, characterized in that, include: A first bonding structure is provided, the first bonding structure including a first substrate and a first bonding layer located on the first substrate, the first bonding layer including: a first metal layer, a first inorganic dielectric layer and a first organic dielectric layer, the first metal layer being a plurality of discrete components, the first inorganic dielectric layer being a plurality of discrete components, each of the first inorganic dielectric layers covering the side surface of a corresponding first metal layer in the circumferential direction, the first organic dielectric layer covering the side surface of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers, and the thermal conductivity of the first inorganic dielectric layer being greater than that of the first organic dielectric layer, the top surface of the first inorganic dielectric layer being higher than that of the first metal layer, the top surface of the first organic dielectric layer being lower than that of the first metal layer, and the density of the first inorganic dielectric layer being greater than that of the first organic dielectric layer; A second bonding structure is provided, the second bonding structure including a second substrate and a second bonding layer located on the second substrate, the second bonding layer including a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer, the top surface of the second bonding dielectric layer exposing the top surface of the second metal layers; The second bonding layer of the second bonding structure is bonded to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to the corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

2. The method for forming a hybrid bonding structure according to claim 1, characterized in that, The formation process of the first bonding layer includes: Multiple discrete first inorganic dielectric layers are formed on the first substrate; A first organic dielectric material layer covering the first inorganic dielectric layer is formed on the first substrate; A first opening is formed in the first organic dielectric material layer and the corresponding first inorganic dielectric layer, and the first opening penetrates the first organic dielectric material layer and the first inorganic dielectric layer. A first metallic material layer is formed within the first opening; The first organic dielectric material layer, the first metal material layer, and the first inorganic dielectric layer are thinned using a chemical mechanical polishing process to form a first organic dielectric layer and a first metal layer. The top surface of the first inorganic dielectric layer is higher than the top surface of the first metal layer, and the top surface of the first organic dielectric layer is lower than the top surface of the first metal layer.

3. The method for forming a hybrid bonding structure according to claim 2, characterized in that, Before forming the first metal material layer, the method further includes: A first seed layer is formed on the inner wall surface of the first opening and on the top surface of the first organic medium material layer; A first metal material layer is formed on the surface of the first seed layer using a first electroplating process, wherein the top surface of the first metal material layer inside the first opening is higher than the top surface of the first inorganic dielectric layer. When the first organic dielectric material layer, the first metal material layer, and the first inorganic dielectric layer are thinned using a chemical mechanical polishing process, the first seed layer on the top surface of the first organic dielectric material layer is simultaneously removed by polishing.

4. The method for forming a hybrid bonding structure according to claim 3, characterized in that, The material of the first inorganic dielectric layer includes silicon oxide, silicon nitride, or silicon carbide nitride.

5. The method for forming a hybrid bonding structure according to claim 4, characterized in that, The process of forming the first inorganic dielectric layer includes: A first inorganic dielectric material layer is formed on the top surface of the first substrate using a chemical vapor deposition process; Photolithography and etching processes are used to remove part of the first inorganic dielectric material layer to form multiple discrete first inorganic dielectric layers.

6. The method for forming a hybrid bonding structure according to claim 4, characterized in that, The material of the first organic dielectric material layer includes a photosensitive organic material.

7. The method for forming a hybrid bonding structure according to claim 6, characterized in that, The photosensitive organic material includes photosensitive polyimide resin, photosensitive polybenzoxazole resin, photosensitive benzocyclobutene resin, or photosensitive fluorinated polyimide resin.

8. The method for forming a hybrid bonding structure according to claim 6, characterized in that, The process of forming the first opening includes: The first opening includes a first sub-opening and a second sub-opening that are connected, with the first sub-opening located above the second sub-opening; A first sub-opening is formed in the first organic dielectric material layer using a photolithography process, and the first sub-opening exposes a portion of the top surface of the first inorganic dielectric layer. Using the first organic dielectric material layer as a mask, the first inorganic dielectric layer is etched along the first sub-opening to form a second sub-opening in the first inorganic dielectric layer.

9. The method for forming a hybrid bonding structure according to claim 6, characterized in that, The process of forming the first organic dielectric material layer includes: A first organic dielectric material layer is formed on the first substrate by using a spin coating process and a curing process, covering the sides of the first inorganic dielectric layer and filling the space between adjacent first inorganic dielectric layers.

10. The method for forming a hybrid bonding structure according to claim 1, characterized in that, The second bonding dielectric layer includes a second inorganic dielectric layer and a second organic dielectric layer. The second inorganic dielectric layer is a plurality of discrete layers. Each second inorganic dielectric layer covers the side of a corresponding second metal layer in the circumferential direction, and the thermal conductivity of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

11. The method for forming a hybrid bonding structure according to claim 10, characterized in that, The second bonding medium layer is bonded to the first organic medium layer and the first inorganic medium layer, including: the second organic medium layer is bonded to the corresponding first organic medium layer, and the second inorganic medium layer is bonded to the corresponding first inorganic medium layer.

12. The method for forming a hybrid bonding structure according to claim 10, characterized in that, The top surface of the second inorganic dielectric layer is higher than the top surface of the second metal layer, and the top surface of the second organic dielectric layer is lower than the top surface of the second metal layer; The density of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

13. The method for forming a hybrid bonding structure according to claim 1, characterized in that, The second bonding dielectric layer includes only a third organic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the top surface of the third organic dielectric layer is lower than the top surface of the second metal layer.

14. The method for forming a hybrid bonding structure according to claim 13, characterized in that, The second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer, including: The third organic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer; The third organic dielectric layer in the second bonding layer is bonded to the first inorganic dielectric layer in the first bonding layer.

15. The method for forming a hybrid bonding structure according to claim 1, characterized in that, The second bonding dielectric layer includes only a third inorganic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the top surface of the third inorganic dielectric layer is higher than the top surface of the second metal layer.

16. The method for forming a hybrid bonding structure according to claim 15, characterized in that, The second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer, including: The third inorganic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer; The third inorganic dielectric layer in the second bonding layer is bonded to the first inorganic dielectric layer in the first bonding layer.

17. The method for forming a hybrid bonding structure according to claim 1, characterized in that, The second bonding dielectric layer includes a fourth inorganic dielectric layer and a fourth organic dielectric layer. The fourth organic dielectric layer is a plurality of discrete layers, each of which circumferentially covers the side surface of a corresponding second metal layer. The fourth inorganic dielectric layer covers the side surface of the fourth organic dielectric layer and fills the space between adjacent fourth inorganic dielectric layers. The thermal conductivity of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer. The top surface of the fourth inorganic dielectric layer is higher than the top surface of the second metal layer, and the top surface of the fourth organic dielectric layer is lower than the top surface of the second metal layer. The density of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer.

18. The method for forming a hybrid bonding structure according to claim 17, characterized in that, The second bonding medium layer is bonded to the first organic medium layer and the first inorganic medium layer, including: the fourth organic medium layer is bonded to the corresponding first inorganic medium layer, and the fourth inorganic medium layer is bonded to the corresponding first organic medium layer.

19. The method for forming a hybrid bonding structure according to claim 1, characterized in that, Also includes: The surface of the first substrate near the first bonding layer has a plurality of discrete first pads, and the plurality of discrete first pads are electrically connected to the corresponding first metal layer. The second substrate has a plurality of discrete second pads on its surface near the second bonding layer, and the plurality of discrete second pads are electrically connected to the corresponding second metal layer.

20. The method for forming a hybrid bonding structure according to claim 1, characterized in that, Bonding the second bonding layer of the second bonding structure to the first bonding layer of the first bonding structure includes: The surfaces of the first bonding layer and the second bonding layer are activated using plasma, wherein the plasma material includes one of oxygen, argon or nitrogen. The second bonding structure is aligned and bonded to the first bonding structure. The bonding process employs a hybrid bonding process with a time range of 1-2 hours and a temperature range of 200℃-400℃.

21. A hybrid bonding structure, characterized in that, include: A first bonding structure includes a first substrate and a first bonding layer located on the first substrate. The first bonding layer includes a first metal layer, a first inorganic dielectric layer, and a first organic dielectric layer. The first metal layer is a plurality of discrete components, and the first inorganic dielectric layer is a plurality of discrete components. Each first inorganic dielectric layer covers the side of a corresponding first metal layer circumferentially. The first organic dielectric layer covers the side of the first inorganic dielectric layer and fills the space between adjacent first inorganic dielectric layers. The thermal conductivity of the first inorganic dielectric layer is greater than that of the first organic dielectric layer, and the density of the first inorganic dielectric layer is greater than that of the first organic dielectric layer. The second bonding structure includes a second substrate and a second bonding layer located on the second substrate. The second bonding layer includes a second bonding dielectric layer and a plurality of discrete second metal layers located in the second bonding dielectric layer. The top surface of the second bonding dielectric layer exposes the top surface of the second metal layers. The second bonding layer of the second bonding structure is bonded to the first bonding layer of the first bonding structure, wherein the second metal layer in the second bonding layer is bonded to the corresponding first metal layer in the first bonding layer, and the second bonding dielectric layer is bonded to the first organic dielectric layer and the first inorganic dielectric layer.

22. The hybrid bonding structure according to claim 21, characterized in that, The second bonding dielectric layer includes a second inorganic dielectric layer and a second organic dielectric layer. The second inorganic dielectric layer is a plurality of discrete layers, and each second inorganic dielectric layer covers the side of a corresponding second metal layer in the circumferential direction. The second organic dielectric layer is bonded to a corresponding first organic dielectric layer, and the second inorganic dielectric layer is bonded to a corresponding first inorganic dielectric layer. The thermal conductivity of the second inorganic dielectric layer is greater than that of the second organic dielectric layer, and the density of the second inorganic dielectric layer is greater than that of the second organic dielectric layer.

23. The hybrid bonding structure according to claim 21, characterized in that, The second bonding medium layer includes only a third organic medium layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially, wherein the third organic medium layer in the second bonding layer is bonded to the first organic medium layer in the first bonding layer; the third organic medium layer in the second bonding layer is bonded to the first inorganic medium layer in the first bonding layer.

24. The hybrid bonding structure according to claim 21, characterized in that, The second bonding dielectric layer includes only a third inorganic dielectric layer, which fills the space between adjacent second metal layers and covers the side surface of each second metal layer circumferentially. The third inorganic dielectric layer in the second bonding layer is bonded to the first organic dielectric layer in the first bonding layer.

25. The hybrid bonding structure according to claim 21, characterized in that, The second bonding dielectric layer includes a fourth inorganic dielectric layer and a fourth organic dielectric layer. The fourth organic dielectric layer is a plurality of discrete layers, each of which circumferentially covers the side surface of a corresponding second metal layer. The fourth inorganic dielectric layer covers the side surface of the fourth organic dielectric layer and fills the space between adjacent fourth inorganic dielectric layers. The fourth organic dielectric layer is bonded to a corresponding first inorganic dielectric layer, and the thermal conductivity of the fourth inorganic dielectric layer is greater than that of the fourth organic dielectric layer. The density of the fourth inorganic dielectric layer is also greater than that of the fourth organic dielectric layer.

26. The hybrid bonding structure according to claim 21, characterized in that, The materials of the first metal layer and the second metal layer include one or more of Cu, Au, Al, Ag, Ti, W, Pt, and Ni.

27. The hybrid bonding structure according to claim 21, characterized in that, Also includes: First pads, a plurality of discrete first pads are disposed on the surface of the first substrate near the first bonding layer, and the plurality of discrete first pads are electrically connected to the corresponding first metal layer. The second pads, a plurality of discrete second pads, are disposed on the surface of the second substrate near the second bonding layer, and the plurality of discrete second pads are electrically connected to the corresponding second metal layer.

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