Heater and plasma generator for gas activation and associated chamber for semiconductor manufacturing

Abstract

The present disclosure relates to heaters for gas activation and plasma generation, and related chamber components, methods, and processing chambers for semiconductor manufacturing. The processing chamber includes a chamber body including a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially define a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed within the processing volume. The plasma generator is disposed at least partially about the processing volume. The window further includes a flange. The flange includes an opaque material. An induction coil is embedded in the opaque material of the flange.

Description

Technical Field

[0001] This disclosure relates to heaters and plasma generators for gas activation, as well as related chamber components, methods, and processing chambers for semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process in which a film of various materials is deposited on the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be time-consuming, expensive, and inefficient, and may have limited capacity and throughput. Furthermore, the hardware can involve relatively large dimensions, occupying a significant portion of the manufacturing facility's footprint. Additionally, the process can involve non-uniformity, which can lead to reduced device performance and / or reduced throughput. For example, gas activation can be restricted and / or involve non-uniform activation, which can result in restricted and / or non-uniform film growth and / or dopant concentration. For instance, gas activation can be limited at relatively low processing temperatures for device fabrication (such as complementary field-effect transistor (CFET) devices). Furthermore, relatively high processing temperatures may result in undesirable dopant diffusion and / or reduced device performance.

[0004] Therefore, there is a need for improved equipment and methods in semiconductor processing. Summary of the Invention

[0005] This disclosure relates to heaters and plasma generators for gas activation, as well as related chamber components, methods, and processing chambers for semiconductor manufacturing.

[0006] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body comprising a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially define a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed within the processing volume. The plasma generator is disposed at least partially around the processing volume.

[0007] In one or more embodiments, a chamber component suitable for semiconductor manufacturing is disclosed. The chamber component includes a flange. The flange comprises an opaque material. An induction coil is embedded in the opaque material of the flange.

[0008] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a source reactor, a substrate support, and a plasma reactor. The substrate support is operable to clamp a substrate. The plasma reactor includes a cover, sidewalls, an extraction plate, and a processing volume at least partially defined by the cover, sidewalls, and extraction plate; and a plasma generator disposed around the processing volume. The plasma generator is an induction coil. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it will be noted that the drawings illustrate only exemplary embodiments and are not intended to limit the scope of the disclosure, and may allow for other equivalent and effective embodiments.

[0010] Figure 1 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2A It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 2B It is based on one or more implementation methods. Figure 2A A schematic side cross-sectional view of the plasma reactor in the processing chamber.

[0013] Figure 3 It is a schematic block diagram view of a substrate processing method for semiconductor manufacturing according to one or more embodiments.

[0014] To facilitate understanding, the same reference numerals have been used where possible to identify common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0015] This disclosure relates to heaters and plasma generators for gas activation, as well as related chamber components, methods, and processing chambers for semiconductor manufacturing.

[0016] This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, joining, embedding, welding, mixing, melting together, interfering with fit, and / or fastening, such as by using bolts, threaded connections, pins, and / or screws. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components (such as links, blocks, and / or frames).

[0017] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a precursor crossflow across the top surface 150 of the substrate 102.

[0018] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Within the chamber body are disposed a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), and one or more heat sources 141, 143. The one or more heat sources 141, 143 include multiple upper heat sources 141 and multiple lower heat sources 143. The multiple upper heat sources 141 and lower heat sources 143 include light-emitting diodes (LEDs) or laser diodes (e.g., vertical-cavity surface-emitting lasers (VCSELs)). The LEDs are operable to generate spikes at a target wavelength. The target wavelength is in the range of about 100 nm to about 1000 μm, such as about 400 nm to 500 nm, such as about 450 nm. In one or more embodiments that include LEDs as upper heat source 141 and lower heat source 143, the wavelength of the light emitted from the LEDs can be changed during processing to enable the deposition process. For example, light of a first wavelength can be emitted from the LED to activate the process gas P1, and light of a second wavelength can be emitted during the cleaning process of the processing chamber. In addition, partly due to the LED emitting light of a specific wavelength rather than a broadband spectrum, the LED enables more efficient metrology and high-temperature measurement of the substrate 102 and components of the processing chamber 100, such as the substrate support 106. By emitting light of a more specific wavelength, the amount of noise from other wavelengths of light in the system is reduced, making it easier for sensors (e.g., pyrometers and other metrological tools) to more accurately measure the temperature (and other properties) of the substrate 102.

[0019] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. Other substrate supports (including, for example, substrate carriers and / or one or more annular segments supporting one or more external regions of the substrate 102) are contemplated by this disclosure. A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of the upper heat source module 155. A plurality of lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The plurality of lower heat sources 143 form part of the lower heat source module 145.

[0020] The upper window 108 may be an upper dome having a first segment 108A and a second segment 108B. The first segment 108A (e.g., a transparent segment) is formed of an energy-transmitting material (such as quartz). The second segment 108B of the upper window 108 (e.g., an opaque segment or flange) is formed of an opaque material. The opaque material includes opaque quartz (e.g., gray quartz, white quartz, and / or black quartz), graphite, or silicon carbide. In one or more embodiments, the second segment 108B is formed of an energy-transmitting material (such as quartz). The second segment 108B includes a curved inner surface 165. The lower window 110 is a lower dome and / or formed of an energy-transmitting material (such as transparent quartz).

[0021] Processing volume 136 and purification volume 138 are formed between upper window 108 and lower window 110. Processing volume 136 and purification volume 138 are portions of an internal volume at least partially defined by upper window 108, lower window 110, and one or more gaskets 111, 163. In one or more embodiments, processing volume 136 is the processing volume. One or more gaskets 111, 163 are disposed inwardly from the chamber body.

[0022] The internal volume includes a substrate support 106 disposed therein. The substrate support 106 includes a top surface 123 on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices within the processing volume 136 for providing movement and / or adjustment of the shaft 118 and / or the substrate support 106.

[0023] The substrate support 106 may include lifting rod holes 107 therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 is lowered from a processing position to a transfer position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0024] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas outlets 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the sides of the flow module 112 opposite to the one or more gas outlets 116. One or more gaskets 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and the purge gas inlets 164 are each positioned such that a corresponding process gas P1 and a corresponding purge gas P2 flow parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 152. One or more gas discharge outlets 116 are fluidly connected to discharge pump 157. One or more treatment gases P1 supplied using one or more treatment gas sources 151 may include one or more reactive gases (such as silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as nitrogen (N2) and / or hydrogen (H2)). One or more purification gases P2 supplied using one or more purification gas sources 152 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more clean gas sources 153 may include one or more hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more treatment gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0025] One or more gas exhaust outlets 116 are further connected to and include an exhaust system 109. The exhaust system 109 is fluidly connected to one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 109 may facilitate controlled deposition of layers on the substrate 102. The exhaust system 109 is disposed on the opposite side of the processing chamber 100 relative to the flow module 112.

[0026] The processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). A flow module 112 (which may be at least a portion of the sidewall of the processing chamber 100) includes one or more gas inlets 114 in fluid communication with the processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper gasket 163 and the lower gasket 111. In some embodiments, one or more second gas inlets are in fluid communication with one or more inlet openings of the upper gasket 163.

[0027] A plasma generator is disposed around the processing volume 136. In one or more embodiments, the upper liner 163 further includes the plasma generator. In one or more embodiments, the plasma generator includes an induction coil 130. The induction coil 130 is operable to allow radio frequency (RF) power to flow through it for generating plasma in an inductively coupled plasma (ICP) manner. In one or more embodiments, the induction coil 130 is embedded in the upper liner 163 and / or the upper window 108. This disclosure contemplates that multiple induction coils 130 may be embedded in the upper liner 163 and / or the upper window 108. In one or more embodiments, a second segment 108B of the upper liner 163 and / or the upper window 108 includes one or more recesses in which the induction coil 130 is disposed. Plasma may be generated in the processing volume 136 by the induction coil 130. The induction coil 130 is coupled to the RF power generator 133 via a matching network 137. When the induction coil 130 is excited by RF power from the RF power generator 133, plasma is generated in the processing volume 136. In one or more embodiments, the plasma is generated using the induction coil 130 in an inductively coupled plasma (ICP) manner. In one or more embodiments, RF power of about 1 kW to about 15 kW, such as about 3 kW to about 10 kW, is supplied to the coil 130. The induction coil 130 can ignite and sustain the plasma over a wide range of pressures and flow rates.

[0028] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into a process volume 136 to flow over a substrate 102. Gas G1 also flows into the process volume 136. An induction coil 130 ignites the gas G1 into plasma. The induction coil 130 can ionize and dissociate the gas G1 to facilitate deposition onto the substrate 102. For example, plasma can be used to assist deposition by breaking the bonds of one or more process gases P1. The gas G1 used to generate the plasma may include, but is not limited to, one or more of the following: hydrogen (H2), xenon (Xe2), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixture thereof (such as xenon and / or neon). In one or more embodiments, gas G1 comprises one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, gas G1 comprises one or more dopant gases, such as germanane, diborane, and / or phosphorus. Other gases may be considered for use in gas G1.

[0029] A conductive plate (e.g., an ion filter, such as an ion blocking plate) may be disposed in the processing chamber 100. The conductive plate can block ions in the plasma to remove ions from the plasma. The conductive plate may include silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (such as anodized aluminum).

[0030] This disclosure also anticipates that one or more purge gases P2 can be supplied to and discharged from the purge volume 138 during deposition operations (through one or more purge gas inlets 164). The flow of one or more purge gases P2 is simultaneous with the flow of one or more process gases P1. One or more process gases P1 pass through the gap between the upper liner 163 and the lower liner 111 and are discharged through one or more gas discharge outlets 116. One or more purge gases P2 can pass through one or more outlet openings and be discharged through the same one or more gas discharge outlets 116 as the one or more process gases P1. This disclosure anticipates that one or more purge gases P2 can be discharged separately through one or more second gas discharge outlets separate from the one or more gas discharge outlets 116.

[0031] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the processing volume 136.

[0032] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameters (e.g., temperature) within the processing chamber 100. In one or more embodiments, the one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. A controller 190 (described below) can control one or more sensor devices 195, 196, 197, 198 and can perform methods for analyzing the uniformity of substrate processing using at least one of the one or more sensor devices 195, 196, 197, 198. In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, each sensor device 195, 196, 197, 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer. This disclosure contemplates the use of sensor devices other than pyrometers, and / or one or more of sensor devices 195, 196, 197, 198 that can measure properties other than temperature (such as metrological properties). For example, one or more of sensor devices 195, 196, 197, 198 can measure one or more gas parameters and / or one or more plasma parameters (such as ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, radical density, and / or absorption). In one or more embodiments, one or more of the sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0033] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed on the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the bottom plate 152. This disclosure contemplates that at least one of the lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 197 (such as the external sensor device 197).

[0034] Each sensor device 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensor devices besides the sensor devices 195, 196, 197, 198. In one or more embodiments, the processing chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, 198.

[0035] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or inputs as sensor readings from sensors, such as one or more sensor devices 195, 196, 197, 198. For example, sensor devices may include: sensor devices monitoring layer growth on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, a plurality of upper heat sources 141, a plurality of lower heat sources 143, substrate support 106, and / or pads 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 may measure the temperature of the plurality of upper heat sources 141 and the plurality of lower heat sources 143, and may control the power to the plurality of upper heat sources 141 and the plurality of lower heat sources 143 based on the measured temperature (e.g., using feedback control). As described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, one or more thermocouples (e.g., adjacent thermocouples) are configured to measure the temperature of one or more components of the processing chamber 100 (such as substrate support 106 and / or preheating ring 117), and the power to the plurality of upper heat sources 141 and the plurality of lower heat sources 143 can be controlled based on the measured temperature (e.g., using feedback control).

[0036] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), instruction-containing memory 191, and support circuitry 192 for the CPU 193. Controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 functions as a central controller.

[0037] Controller 190 has any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191, or non-transitory computer-readable medium, is one or more readily available types of memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage (local or remote). Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry systems and subsystems, and the like. Operating parameters (e.g., power applied to heat sources 141, 143, cleaning formula, and / or processing formula) and operations are stored as software routines in memory 191. These software routines are executed or invoked to transform controller 190 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. When executed, instructions stored in memory cause one or more of the operations described herein to be performed with respect to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0038] The various operations described herein can be performed automatically using the controller 190, or they can be performed automatically or manually using certain operations performed by the user.

[0039] The controller 190 is configured to control the power, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing output to the sensor devices 195, 196, 197, 198, upper heat source 141, lower heat source 143, processing gas source 151, purified gas source 152, motion component 121, and / or exhaust pump 157.

[0040] During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 400 degrees Celsius or higher, or 600 degrees Celsius or lower. In one or more embodiments, the target temperature of substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is below 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is 400 degrees Celsius or lower, such as below 200 degrees Celsius (e.g., about 150 degrees Celsius).

[0041] Figure 2A This is a schematic cross-sectional view of a processing chamber 200 according to one or more embodiments. In one or more embodiments, the processing chamber 200 is an ion beam chamber, such as an ion beam etching chamber. The processing chamber is adapted to supply deposition gases, ions, free radicals, dopants, and / or etchants to a substrate 222 to react with material from the substrate 222 and deposit the material onto the substrate 222, supply ions, free radicals, and / or dopants to the substrate 222, and / or etch the substrate 222. Figure 2B This is a schematic cross-sectional view of the plasma reactor 202 in the processing chamber.

[0042] Processing chamber 200 includes a plasma reactor 202 that can supply plasma 204 through its internal volume. Plasma reactor 202 includes an outer sidewall 201, a cover 203, an upper inner sidewall 205, a dielectric sidewall 209, and a lower inner sidewall 211. The dielectric sidewall 209 is disposed between the plasma source sidewall 207 and the upper inner sidewall 205. The processing volume is defined by the cover 203, the upper inner sidewall 205, and the lower inner sidewall 211. The upper inner sidewall 205 and the lower inner sidewall 211 comprise a quartz material to withstand elevated temperatures and reduce epitaxial growth contamination. The dielectric sidewall 209 comprises a quartz tube. Processing chamber 200 may include at least one gas source 208 to supply processing gases to plasma reactor 202. Processing chamber 200 may further include an RF power source 233 via a matching network 235 to generate power for igniting and sustaining plasma 204. The plasma power source may be an inductively coupled plasma (ICP) source (e.g., induction coil 214). When induction coil 214 is excited with RF power from RF power generator 233, plasma is generated in processing volume 236. In one or more embodiments, RF power of about 1 kW to about 15 kW, such as about 3 kW to about 10 kW, is provided to coil 130. Induction coil 214 can ignite and sustain plasma over a wide pressure and flow range. In one or more embodiments, induction coil 214 is disposed in plasma source sidewall 207. This disclosure contemplates that plasma source sidewall 207 may be omitted.

[0043] The plasma reactor 202 of the processing chamber 200 can be maintained at ground potential, and the substrate 222 and substrate support 224 can be positively biased relative to ground potential. The substrate 222 is configured to be clamped to the substrate support 224 by a substrate support clamp 224a. In one or more embodiments, the substrate support 224 includes a heater disposed within the substrate support 224 for heating the substrate 222. A bias power supply 216 can be configured to generate a voltage difference between the plasma reactor 202 and the substrate support 224 disposed in the source reactor 206 through a matching network 215. The bias power supply 216 can positively bias the plasma reactor 202 relative to ground potential, while the source reactor 206 and substrate support 224 are maintained at ground potential. The processing chamber 200 can be maintained at ultra-high vacuum (e.g., in the range of about 1 mTorr to about 1000 mTorr). When plasma 204 is present in plasma reactor 202 and the bias power supply 216 positively biases plasma reactor 202 relative to ground potential, an ion beam including positive ions can be extracted from plasma 204. The ion beam including ions can assist in depositing films on substrate 222, etching substrate 222 (e.g., using molecular beam etching (MBE)), or supplying ions into substrate 222.

[0044] An ion beam can be extracted through holes 219 in the extraction plate 218 and guided to the substrate 222 held on the substrate support 224. In one or more embodiments, the substrate support 224 may be movable relative to the extraction plate 218. For example, the substrate support 224 may be movable in a direction parallel to the Z-axis of the illustrated Cartesian coordinate system, as indicated by arrow 225. In this way, the distance between the surface of the substrate 222 and the extraction plate 218 can vary. In one or more embodiments, the substrate support 224 may be configured to scan the substrate 222 relative to the extraction plate 218 in a direction parallel to the plane of the substrate 222. The substrate support 224 may be movable perpendicularly to the Y-axis, as indicated by arrow 226.

[0045] In one or more embodiments, the gas source 208 of the processing chamber 200 may supply a plurality of processing gases P1 and / or gas G1 to the plasma reactor 202 for generating plasma 204 and / or processing substrate 222. Such feed gases may include the exemplary gases described above with respect to gas G1 and / or one or more processing gases P1. An ion beam extracted from the plasma formed from one or more previously mentioned inert gases can be effectively used to etch various substrate materials, including silicon. Gas G1 and / or one or more processing gases P1 can generate a positive pressure in the processing volume 236, thereby preventing potential sputtering atoms from substrate 222 from entering the processing volume 236.

[0046] The processing chamber 200 does not require a separate spray head structure as in the source reactor 206. As a result, the source reactor 206 can be made smaller, and the processing chamber 200 can therefore have a smaller overall size compared to chambers using other spray head gas delivery systems.

[0047] Processing 200 may include a controller 190 operatively connected to a gas source 208 for controlling the delivery of residue removal gas and processing gas to extraction plate 218 in a predetermined manner. Controller 190 is operatively connected to a drive mechanism 297 that drives a substrate support 224 (via support arm 295) during scanning of substrate 222, and controller 190 may be programmed to coordinate the delivery of residue removal gas and processing gas to extraction plate 218, and thus coordinate the emission of residue removal gas and processing gas, wherein the position and movement of substrate support 224 delivers residue removal gas and processing gas to substrate 222 in a desired manner and receives signals / confirmations / commands from endpoint detectors. In one or more embodiments, controller 190 may control the rate of delivery of residue removal gas and processing gas to extraction plate 218 to cause pressure variations.

[0048] Figure 3 This is a schematic block diagram view of a substrate processing method 300 applicable to semiconductor manufacturing. Method 300 can be used to process substrates within processing chamber 100 and / or processing chamber 200.

[0049] In operation 301, a substrate positioned on a substrate support within the processing chamber is heated by one or more heat sources. In one or more embodiments, the heat sources include multiple upper heat sources and multiple lower heat sources. The upper heat sources are disposed above the substrate. In one or more embodiments, the heat sources may be embedded in the substrate support. Heating includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is below 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or lower.

[0050] Operation 302 includes supplying plasma into the processing volume of the processing chamber via a plasma generator. The plasma generator may include induction coils. In one or more embodiments, the induction coils are configured to surround the processing volume.

[0051] Operation 303 includes maintaining the processed volume under a pressure. In one or more embodiments, the pressure is maintained at less than 60 Torr, such as in the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained at less than 1 Torr, such as in the range of 0 Torr to 5 mTorr.

[0052] Operation 304 includes flowing one or more process gases over a substrate. In one or more embodiments, the plasma of operation 302 is supplied during the flow of the one or more process gases in operation 304, and the plasma flows over the substrate. In one or more embodiments, the plasma of operation 302 is supplied before or after the flow of the one or more process gases in operation 304.

[0053] Operation 305 includes depositing one or more layers on a substrate. In one or more embodiments, the plasma of operation 302 is supplied during the deposition of operation 305. In one or more embodiments, the plasma of operation 302 is supplied before or after the deposition of operation 305.

[0054] The benefits of this disclosure include reliable gas activation (e.g., at relatively low processing temperatures); adjustable gas activation; modularity for chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. As an example, ions and / or free radicals can be used to activate the gas for processing, in addition to or as a substitute for electromagnetic radiation (such as infrared and / or ultraviolet radiation).

[0055] Benefits also include enhanced device performance; reduced or eliminated unintended dopant diffusion; efficient processing; and increased throughput. For example, for substrate target temperatures below 500 degrees Celsius, such as target temperatures in the range of 380 to 500 degrees Celsius, gas activation is promoted. For instance, when the substrate is at approximately 400 degrees Celsius, gases can be activated above the substrate to approximately 500 degrees Celsius or higher.

[0056] It is anticipated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or properties of processing chamber 100; controller 190; one or more sensor devices 195, 196, 197, 198; induction coil 130; processing chamber 200; and / or method 300 may be combined. Furthermore, it is anticipated that one or more aspects disclosed herein may include some or all of the previously mentioned benefits.

[0057] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope, which is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: A chamber body, the chamber body comprising a flow module; A window, the chamber body and the window at least partially define the processing volume; One or more heat sources, said one or more heat sources being operable to heat the processing volume; A substrate support member disposed within the processing volume; as well as A plasma generator, which is disposed at least partially around the processing volume.

2. The processing chamber of claim 1, wherein the plasma generator includes an induction coil arranged circumferentially around the processing volume.

3. The processing chamber of claim 2, wherein the flow module is operable to supply one or more processing gases to the processing volume.

4. The processing chamber of claim 2, wherein the processing chamber further comprises: A liner comprising one or more flow gaps communicating with one or more gas inlets of the flow module, wherein the plasma generator is embedded in the liner.

5. The processing chamber of claim 2, wherein the window further comprises: A first segment, the first segment comprising an energy-transmitting material; and The second section, comprising an opaque material, wherein the plasma generator is embedded in the second section of the window.

6. The processing volume as claimed in claim 3, wherein the one or more processing gases comprise silicon (Si), phosphorus (P), germanium (Ge), phosphide (SiP), phosphine (PH3), nitrogen (N2), hydrogen (H2), or combinations thereof.

7. The processing chamber of claim 1, wherein the one or more heat sources comprise light-emitting diodes (LEDs).

8. The processing chamber of claim 7, wherein the LED is operable to generate a spike at a target wavelength.

9. The processing chamber of claim 8, wherein the target wavelength is in the range of 400 nm to 500 nm.

10. A chamber component suitable for semiconductor manufacturing, the chamber component comprising: Body, the body including a flange, the flange comprising an opaque material; and An induction coil is embedded in the opaque material of the flange.

11. The chamber component of claim 10, further comprising a transparent segment formed of an energy-transmitting material, wherein the transparent segment extends radially inward from the flange.

12. The chamber component of claim 11, wherein the energy-transmitting material comprises transparent quartz, and the opaque material comprises one or more of opaque quartz, graphite, or silicon carbide.

13. The chamber component of claim 10, wherein the chamber component further comprises one or more flow gaps.

14. The chamber component of claim 10, wherein the transparent section includes a curved inner surface.

15. The chamber component of claim 10, wherein the opaque material comprises one or more of opaque quartz, graphite, or silicon carbide.

16. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: Source reactor, the source reactor comprising: A substrate support member, operable to clamp a substrate; and A plasma reactor, the plasma reactor comprising: build; Sidewall; Extraction plate; The processing volume is defined at least in part by the cover, the sidewalls, and the extraction plate; as well as A plasma generator, which is arranged around the processing volume, wherein the plasma generator is an induction coil.

17. The processing chamber of claim 16, wherein the sidewall comprises: Outer wall; Upper inner wall; Dielectric sidewalls; Plasma generator sidewalls; and Lower inner wall.

18. The processing chamber of claim 17, wherein the induction coil is disposed in the sidewall of the plasma generator.

19. The processing chamber of claim 16, wherein the substrate support is operable to be positively biased relative to ground potential and to generate a voltage difference between the plasma reactor and the substrate support.

20. The processing chamber of claim 19, wherein the voltage difference between the plasma reactor and the substrate support is configured to generate an ion beam to deposit a film on the substrate.

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