A large-area Mg-doped NiO hole transport layer magnetron sputtering preparation device

Abstract

The application provides a large-area Mg-doped NiO hole transport layer magnetron sputtering preparation device, and relates to the technical field of perovskite solar cell production. The target material of the first magnetron sputtering target is NiO target material, the target material of the second magnetron sputtering target is MgO target material, and the first magnetron sputtering target and the second magnetron sputtering target are both arranged in the process cavity and are adapted to be electrically connected with the power supply. The target material below the first magnetron sputtering target, the target material below the second magnetron sputtering target and the process cavity jointly form a sputtering area, and the substrate is pivotally installed in the sputtering area and is used for placing a substrate so that a sputtering thin film can be formed on the substrate. The application adopts a double-target co-sputtering structure to prepare Mg: NiO x The multi-element composite oxide thin film can effectively solve the problem that the composition of a single alloy plate target is fixed and it is difficult to finely adjust the Mg doping ratio.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cell manufacturing technology, and in particular to a magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer. Background Technology

[0002] The core hole transport layer (HTL) of trans-pin perovskites is mainly composed of organic polymers, small molecules, self-assembled monolayers (SAMs), and inorganic oxides, among which Mg-doped NiO x (Mg:NiO) x ( ) is one of the main types of inorganic hole transport layers in inverted perovskites, characterized by precise energy level downshifting, improved conductivity, interface passivation and crystallization optimization, as well as enhanced film quality and stability.

[0003] In related technologies, NiO is doped with Mg x There are generally two methods for preparing inorganic hole transport layers in trans-perovskites:

[0004] 1. Spin coating method: This method has poor uniformity, large-area spin coating is uncontrollable, and there are many pinholes and large leakage current, resulting in poor repeatability and obvious batch production differences. 2. Magnetron sputtering can effectively solve the above-mentioned defects of spin coating, but in actual use, there are still problems such as uncontrollable doping ratio, high film stress, and insufficient uniformity of large-area preparation. Summary of the Invention

[0005] The present invention aims to at least partially solve one of the technical problems in the related art.

[0006] Therefore, embodiments of the present invention propose a magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer. This apparatus employs a dual-target co-sputtering structure to prepare Mg:NiO. x Multi-component composite oxide thin films can effectively solve the problem of fixed target composition in single alloy plates, making it difficult to fine-tune the Mg doping ratio.

[0007] According to an embodiment of the present invention, a magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer includes a body, a vacuum unit, a first magnetron sputtering target, a second magnetron sputtering target, and a substrate. The body has a process cavity, and the vacuum unit is connected to the process cavity and is capable of evacuating the process cavity. The first magnetron sputtering target is made of NiO, and the second magnetron sputtering target is made of MgO. Both the first and second magnetron sputtering targets are disposed in the process cavity and are adapted to be electrically connected to a power supply. The first and second magnetron sputtering targets are mirror-symmetrical with respect to a reference plane, which is parallel to the vertical direction. The center of the process cavity is coplanar with the reference plane. The area below the target material of the first and second magnetron sputtering targets and the process cavity together constitute a sputtering region. The substrate is pivotally mounted in the sputtering region and is used to place a substrate so that a sputtered thin film can be formed on the substrate. The pivot axis of the substrate is in the same direction as the vertical direction.

[0008] According to an embodiment of the present invention, the magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer can perform vacuum treatment on the process chamber to create a magnetron sputtering environment. Then, a power supply is used to energize the first and second magnetron sputtering targets, and sputtering gas is introduced into the process chamber. The sputtering gas is ionized and accelerated under an electric field. A portion of the ions collide at high speed with the NiO target of the first magnetron sputtering target to sputter Ni and O particles, while another portion of the ions collide at high speed with the MgO target of the second magnetron sputtering target to sputter Mg and O particles. The Ni, Mg, and O particles are then sputtered. Particles mix above the substrate and then react and deposit on the substrate. Simultaneously, the substrate pivots relative to the process cavity, allowing the formation of a large-area, low-roughness, highly conductive, and highly transparent Mg-doped NiO composite film on the substrate. During this process, the Mg doping level in the Mg-doped NiO composite film can be precisely adjusted in real time by controlling the sputtering power ratio of the first and second magnetron sputtering targets. This ensures that a hole transport layer meeting the production process requirements can be obtained after subsequent processing. Therefore, compared to related technologies, this invention uses a dual-target co-sputtering structure to prepare Mg:NiO. x Multi-component composite oxide thin films can effectively solve the problem of fixed target composition in single alloy plates, making it difficult to fine-tune the Mg doping ratio.

[0009] In some embodiments, at least one of the first magnetron sputtering target and the second magnetron sputtering target is detachably connected to the body.

[0010] In some embodiments, both the first magnetron sputtering target and the second magnetron sputtering target include a water-cooled backplate, a magnet assembly, a target holder, and a target material connected sequentially from top to bottom. The water-cooled backplate is adapted to be connected to an external water chiller so that the external water chiller can provide cooling circulating water. The water-cooled backplate can transfer heat with the target material to dissipate heat from the target material.

[0011] In some embodiments, both the first magnetron sputtering target and the second magnetron sputtering target further include a shield, the shield being connected to the target holder and having a first state and a second state. In the first state, the shield covers the target material to prevent deposition and contamination of the target material. In the second state, the shield exposes the target material so that the target material can perform magnetron sputtering on the substrate.

[0012] In some embodiments, the substrate is a temperature-controlled substrate, the temperature-controlled substrate having a working surface facing the first magnetron sputtering target and the second magnetron sputtering target, the working surface being used to place the substrate and to contact the substrate surface; The working surface is provided with an insulating coating.

[0013] In some embodiments, the magnetron sputtering preparation apparatus further includes a first gas source and a second gas source, wherein one of the first gas source and the second gas source is an argon gas source and the other is a mixed gas source formed by argon and oxygen. The argon gas source is used to supply gas to the side of the process cavity where the first magnetron sputtering target is located, and the mixed gas source is used to supply gas to the side of the process cavity where the second magnetron sputtering target is located.

[0014] In some embodiments, the magnetron sputtering fabrication apparatus further includes a distributed gas distribution structure, which includes an inlet pipe and a gas distribution box. The inlet of the inlet pipe is connected to the first gas source or the second gas source, and the outlet of the inlet pipe is connected to the gas distribution box. The gas distribution box is disposed in the process chamber and has a first side facing the sputtering area. The first side is provided with spray holes. The nozzles extend from top to bottom and are arranged at an angle toward the substrate. There are multiple nozzles arranged in an array on the first side.

[0015] In some embodiments, the axial direction of the nozzle forms an angle α with the reference plane, and α is 30°-50°.

[0016] In some embodiments, the magnetron sputtering fabrication apparatus further includes an online film thickness monitoring component, which includes a first QCM sensor and a film thickness gauge. The first QCM sensor is installed in the process cavity and arranged adjacent to the sputtering area. The film thickness gauge is located outside the machine body and can communicate with the first QCM sensor to obtain film thickness information of the sputtered thin film on the substrate.

[0017] In some embodiments, the magnetron sputtering fabrication apparatus further includes a second online film thickness monitoring component, which is a laser interferometry monitoring component installed in the process cavity. The laser interferometry monitoring component is used to monitor the film thickness information of the sputtered thin film on the substrate.

[0018] In some embodiments, the online film thickness monitoring component further includes a second QCM sensor, which is installed in the process chamber and arranged adjacent to the sputtering area, and the second QCM sensor and the first QCM sensor are arranged at intervals in the vertical direction. One of the first QCM sensor and the second QCM sensor is used to monitor the film thickness at the center of the sputtered film on the substrate, and the other is used to monitor the film thickness at the edge of the sputtered film on the substrate.

[0019] In some embodiments, at least one of the online film thickness monitoring components one and the online film thickness monitoring components two is two in number and is respectively arranged adjacent to the first magnetron sputtering target and the second magnetron sputtering target.

[0020] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer according to an embodiment of the present invention.

[0022] Figure 2 This is a schematic diagram of the structure of the first magnetron sputtering target in the magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer according to an embodiment of the present invention.

[0023] Figure label: 1. Main body; 11. Process cavity; 12. Sputtering area; 13. Observation window; 2. Vacuum unit; 3. First magnetron sputtering target; 31. Water-cooled backplate; 32. Magnet assembly; 33. Target mount; 34. Target material; 35. Shielding cover; 4. Second magnetron sputtering target; 5. Substrate; 51. Working surface; 511. Insulating coating; 6. First gas source; 61. First argon gas tank; 62. First mass flow controller; 7. Second gas source; 71. Second argon gas tank; 72. Oxygen tank; 73. Mixing tank; 74. Second mass flow controller; 8. Distributed air distribution structure; 81. Air inlet pipe; 82. Air distribution box; 821. First side surface; 822. Nozzle; 9. Film thickness online monitoring component one; 91. First QCM sensor; 92. Film thickness gauge; 93. Film thickness online monitoring component two; 94. Second QCM sensor. Detailed Implementation

[0024] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0025] like Figure 1 As shown, an embodiment of the present invention discloses a magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer, comprising a body 1, a vacuum unit 2, a first magnetron sputtering target 3, a second magnetron sputtering target 4, and a substrate 5. The body 1 has a process cavity 11, and the vacuum unit 2 is connected to the process cavity 11 and is capable of evacuating the process cavity 11. The target material of the first magnetron sputtering target 3 is a NiO target, and the target material of the second magnetron sputtering target 4 is a MgO target. Both the first magnetron sputtering target 3 and the second magnetron sputtering target 4 are disposed on the process cavity 5. Cavity 11 is adapted to be electrically connected to a power source. The first magnetron sputtering target 3 and the second magnetron sputtering target 4 are mirror-symmetrical with respect to the reference plane, which is parallel to the vertical direction. The center of the process cavity 11 is coplanar with the reference plane. The area below the target material of the first magnetron sputtering target 3, the area below the target material of the second magnetron sputtering target 4, and the process cavity 11 together constitute the sputtering region 12. The substrate 5 is pivotally mounted in the sputtering region 12 and is used to place the substrate so that a sputtered thin film can be formed on the substrate. The pivot axis of the substrate 5 is in the same direction as the vertical direction.

[0026] According to an embodiment of the present invention, the magnetron sputtering fabrication apparatus for a large-area Mg-doped NiO hole transport layer can perform vacuum treatment on the process chamber 11 through the vacuum unit 2 to construct a magnetron sputtering environment. Then, the power supply energizes the first magnetron sputtering target 3 and the second magnetron sputtering target 4, introducing sputtering gas into the process chamber 11. The sputtering gas is ionized and accelerated under the electric field. A portion of the ions collide at high speed with the NiO target material of the first magnetron sputtering target 3 to sputter out Ni and O particles, while another portion of the ions collide at high speed with the MgO target material of the second magnetron sputtering target 4 to sputter out Mg and O particles. The Ni and Mg particles... O particles are mixed above the substrate and then reacted and deposited on the substrate. Simultaneously, the substrate 5 pivots relative to the process cavity 11, allowing a large-area, low-roughness, highly conductive, and highly transparent Mg-doped NiO composite film to be formed on the substrate. During this process, the amount of Mg doping in the Mg-doped NiO composite film can be precisely adjusted in real time by controlling the sputtering power ratio of the first magnetron sputtering target 3 and the second magnetron sputtering target 4, so that a hole transport layer that meets the production process requirements can be obtained after subsequent processing. Therefore, compared with related technologies, this invention uses a dual-target co-sputtering structure to prepare Mg:NiO. x Multi-component composite oxide thin films can effectively solve the problem of fixed target composition in single alloy plates, making it difficult to fine-tune the Mg doping ratio.

[0027] Specifically, the machine body 1 may also be equipped with an observation window 13 for online observation and real-time monitoring of the phase change process. For example, the front panel of the machine body 1 may have an observation window 13. The vacuum unit 2 can evacuate the process chamber 11 to a vacuum level of <5×10⁻⁶. -4 Pa. The power supply is not limited to DC or RF power. The substrate 5 can be rotated relative to the process cavity 11 by a rotary motor, rotary cylinder or other rotating components to ensure the film quality of the sputtered film on the substrate, and also facilitate the preparation of large-area Mg-doped NiO composite films. The top surface of the substrate 5 can be used to place the substrate.

[0028] It should be noted that the substrate is not limited to ITO glass, FTO glass, or quartz glass. Furthermore, the aforementioned "sputtering gas" refers to the gas supplied to the process chamber 11 by the first gas source 6 and the second gas source 7 described below.

[0029] like Figure 1As shown, in some embodiments, at least one of the first magnetron sputtering target 3 and the second magnetron sputtering target 4 is detachably connected to the body 1. In other words, the first magnetron sputtering target 3 is detachably connected to the body 1; or, the second magnetron sputtering target 4 is detachably connected to the body 1; or, both the first magnetron sputtering target 3 and the second magnetron sputtering target 4 are detachably connected to the body 1, so as to facilitate the disassembly and maintenance of the first magnetron sputtering target 3 and the second magnetron sputtering target 4, and also to replace only the damaged parts, thus ensuring the service life of the magnetron sputtering preparation apparatus.

[0030] For example, as shown in the figure, the first magnetron sputtering target 3 and the second magnetron sputtering target 4 can both be connected to the inner top wall of the body 1 through the mounting base. The end of the mounting base away from the inner top wall of the body 1 can contact the surface of the first magnetron sputtering target 3 or the second magnetron sputtering target 4 to increase the contact area and ensure the reliability of the connection between the two.

[0031] like Figure 2 As shown, in some embodiments, the first magnetron sputtering target 3 and the second magnetron sputtering target 4 both include a water-cooled backplate 31, a magnet assembly 32, a target holder 33 and a target material 34 connected sequentially from top to bottom. The water-cooled backplate 31 is adapted to be connected to an external water chiller so that the external water chiller can provide cooling circulating water. The water-cooled backplate 31 can transfer heat with the target material 34 to dissipate heat from the target material 34.

[0032] Understandably, with the above structural design, the water-cooled backplate 31 can cool the target 34 to prevent it from overheating, melting, deforming, or debonding. The magnet assembly 32 can form a magnetic field to confine electrons, thereby improving the sputtering efficiency of the target 34. The target holder 33 is used to mount the target 34.

[0033] Specifically, on a projection surface that is parallel to the vertical direction and orthogonal to the reference plane, the projection of the target 34 is arranged at an angle to the projection of the substrate, so that the target 34 can sputter onto the substrate at an angle downwards.

[0034] like Figure 2 As shown, in some embodiments, the first magnetron sputtering target 3 and the second magnetron sputtering target 4 both include a shield 35. The shield 35 is connected to the target base 33 and has a first state and a second state. In the first state, the shield 35 covers the target material 34 to prevent deposition and contamination of the target material 34. In the second state, the shield 35 exposes the target material 34 so that the target material 34 can perform magnetron sputtering on the substrate.

[0035] Specifically, the end of the shield 35 away from the target base 33 can be an open end, the size of which is adapted to the size of the target 34 to meet the sputtering requirements of the target 34. The open end can be closed or opened by a cover plate. That is, in the first state, the cover plate closes the open end to shield the target 34, while in the second state, the cover plate opens the open end to expose the target 34.

[0036] Furthermore, the shield 35 can automatically switch between the first and second states to improve the process efficiency and automation of the magnetron sputtering preparation apparatus.

[0037] like Figure 1 As shown, in some embodiments, the substrate 5 is a temperature-controlled substrate. The temperature-controlled substrate has a working surface 51 facing the first magnetron sputtering target 3 and the second magnetron sputtering target 4. The working surface 51 is used to place the substrate and contact the substrate surface. The temperature-controlled substrate can make the temperature of the working surface 51 controllable, so as to effectively reduce the stress of the substrate film layer on the working surface 51 and ensure the film quality. At the same time, since the substrate is in contact with the working surface 51, the substrate can be reliably installed on the working surface 51, further ensuring the placement stability of the substrate during the magnetron sputtering process.

[0038] The working surface 51 is provided with an insulating coating 511, which adopts an insulating design to reduce the influence of other factors on the formation process of the Mg-doped NiO composite film on the substrate.

[0039] Specifically, the temperature control substrate may include a cover plate, a heating plate, a temperature sensor, a heat insulation plate, etc. (that is, this part of the temperature control substrate may adopt the existing technology in the field). The cover plate has a working surface 51, and the heating plate may be a heating rod, a heating core, etc. In addition, the cover plate of the temperature control substrate may also have a vacuum adsorption channel so that the substrate can be reliably placed on the working surface 51 by vacuum adsorption.

[0040] like Figure 1 As shown, in some embodiments, the magnetron sputtering preparation apparatus further includes a first gas source 6 and a second gas source 7. One of the first gas source 6 and the second gas source 7 is an argon gas source, and the other is a mixed gas source formed by argon and oxygen. The argon gas source is used to supply gas to the side of the first magnetron sputtering target 3 in the process chamber 11, and the mixed gas source is used to supply gas to the side of the second magnetron sputtering target 4 in the process chamber 11, so as to independently supply gas to the first magnetron sputtering target 3 and the second magnetron sputtering target 4. Under this structural design, oxygen will not interfere with the sputtering of NiO target material, thereby improving the stability of the atmosphere composition during sputtering and the quality of the Mg-doped NiO composite film.

[0041] like Figure 1 As shown, in some embodiments, the magnetron sputtering preparation apparatus further includes a distributed gas distribution structure 8, which includes an inlet pipe 81 and a gas distribution box 82. The inlet of the inlet pipe 81 is connected to a first gas source 6 or a second gas source 7, and the outlet of the inlet pipe 81 is connected to the gas distribution box 82. The gas distribution box 82 is located in the process chamber 11 and has a first side 821 facing the sputtering area 12. The first side 821 is provided with nozzles 822.

[0042] The nozzles 822 extend from top to bottom and are arranged at an angle toward the substrate 5. There are multiple nozzles 822 and they are arranged in an array on the first side 821.

[0043] Understandably, the use of a distributed gas distribution structure 8 can improve the uniformity of gas distribution during the preparation of a large-area Mg-doped NiO hole transport layer. At the same time, the downward-sloping nozzles 822 can prevent the jet from impacting the substrate.

[0044] Specifically, the gas distribution box 82 can be connected to the inner wall of the body 1. There can be two distributed gas distribution structures 8, which are respectively connected to the first gas source 6 and the second gas source 7. For example, as shown in the figure, the body 1 is a cuboid structure. In each distributed gas distribution structure 8, there can be three gas distribution boxes 82, which are respectively installed on the front wall, side wall and rear wall of the body 1. There are three air inlet pipes 81, which correspond one-to-one with the gas distribution boxes 82, so as to evenly distribute gas around the process cavity 11 and ensure that the process gas is uniform during the hole transport layer preparation process.

[0045] In addition, the first gas source 6 may include a first argon tank 61, the outlet of which is connected to the inlet of the inlet pipe 81. The second gas source 7 may include a second argon tank 71, an oxygen tank 72, and a mixing tank 73. The outlets of the second argon tank 71 and the oxygen tank 72 are both connected to the inlet of the mixing tank 73. The outlet of the mixing tank 73 is connected to the inlet of the inlet pipe 81 so that argon and oxygen are mixed and then enter the gas distribution box 82 through the inlet pipe 81. A first mass flow controller 62 may be installed between the outlet of the first argon tank 61 and the inlet of the inlet pipe 81 to precisely control the gas supply of the first gas source 6 to the process chamber 11. Similarly, a second mass flow controller 74 may be installed between the outlet of the mixing tank 73 and the inlet of the inlet pipe 81 to control the gas supply of the second gas source 7 to the process chamber 11, which is beneficial to further optimize the overall working performance of the magnetron sputtering preparation device.

[0046] like Figure 1 As shown, in some embodiments, the axial direction of the nozzle 822 forms an angle α with the reference plane, and α is 30°-50°. For example, α can be 30°, 35°, 40°, 45°, 50°, etc., but is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0047] like Figure 1 As shown, in some embodiments, the magnetron sputtering fabrication apparatus further includes an online film thickness monitoring component 9, which includes a first QCM sensor 91 and a film thickness gauge 92. The first QCM sensor 91 is installed in the process cavity 11 and arranged near the sputtering area 12. The film thickness gauge 92 is located outside the body 1 and can communicate with the first QCM sensor 91 to obtain film thickness information of the sputtered thin film on the substrate.

[0048] like Figure 1 As shown, in some embodiments, the magnetron sputtering fabrication apparatus further includes a second film thickness monitoring component 93, which is a laser interferometry monitoring component and is installed in the process cavity 11. The laser interferometry monitoring component is used to monitor the film thickness information of the sputtered thin film on the substrate.

[0049] It is understandable that the combination of film thickness online monitoring component 19 and film thickness online monitoring component 293 can form a dual system for film thickness online monitoring, which is beneficial to ensure the accuracy of film thickness detection, improve the batch consistency of hole transport layers in trans-perovskite, and is suitable for batch preparation of trans-perovskite.

[0050] Specifically, the probe of the first QCM sensor 91 is positioned directly opposite the sputtering area 12 and angled downwards. The first QCM sensor 91 can be connected to the inner top wall of the housing 1 via a mounting bracket. The first QCM sensor 91 is located below the first magnetron sputtering target 3 and the second magnetron sputtering target 4, and above the substrate. Its specific installation position can be designed and determined according to actual monitoring requirements, ensuring that it does not interfere with the normal operation of the sputtering area 12, and will not be elaborated further here. The specific structure and working principle of the first QCM sensor 91, the film thickness gauge 92, and the laser interferometry monitoring component can adopt existing technologies in this field.

[0051] like Figure 1 As shown, in some embodiments, the online film thickness monitoring component 9 further includes a second QCM sensor 94, which is installed in the process cavity 11 and arranged adjacent to the sputtering area 12. The second QCM sensor 94 and the first QCM sensor 91 are arranged at intervals in the vertical direction.

[0052] One of the first QCM sensor 91 and the second QCM sensor 94 is used to monitor the film thickness at the center of the sputtered film on the substrate, and the other is used to monitor the film thickness at the edge of the sputtered film on the substrate.

[0053] It is understandable that by adopting the above structural design, the first QCM sensor 91 and the second QCM sensor 94 can monitor the substrate from near and far, respectively, so as to accurately obtain the film thickness information of the sputtered thin film on the substrate.

[0054] like Figure 1As shown, in some embodiments, at least one of the film thickness online monitoring component 1 9 and the film thickness online monitoring component 2 93 is two and is respectively arranged adjacent to the first magnetron sputtering target 3 and the second magnetron sputtering target 4. In other words, at least one of the film thickness online monitoring component 1 9 and the film thickness online monitoring component 2 93 can be arranged adjacent to the first magnetron sputtering target 3. At the same time, at least one of the film thickness online monitoring component 1 9 and the film thickness online monitoring component 2 93 can also be arranged adjacent to the second magnetron sputtering target 4, so as to obtain multiple sets of film thickness monitoring data and further ensure the reliability of film thickness monitoring results.

[0055] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0056] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0057] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0058] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "beneath" of the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0059] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0060] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer, characterized in that, include: The machine body and the vacuum unit, wherein the machine body has a process chamber and the vacuum unit is connected to the process chamber and is capable of evacuating the process chamber; A first magnetron sputtering target and a second magnetron sputtering target, wherein the target material of the first magnetron sputtering target is NiO and the target material of the second magnetron sputtering target is MgO, both the first and second magnetron sputtering targets are disposed in the process cavity and are adapted to be electrically connected to a power supply, the first and second magnetron sputtering targets are mirror-symmetrical with respect to a reference plane, the reference plane is parallel to the vertical direction, and the center of the process cavity is coplanar with the reference plane; The substrate, the area below the target of the first magnetron sputtering target, the area below the target of the second magnetron sputtering target, and the process cavity together constitute a sputtering region. The substrate is pivotally mounted in the sputtering region and is used to place a substrate so that a sputtered thin film can be formed on the substrate. The pivot axis of the substrate is in the same direction as the up and down direction.

2. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 1, characterized in that, At least one of the first magnetron sputtering target and the second magnetron sputtering target is detachably connected to the body.

3. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 1, characterized in that, Both the first magnetron sputtering target and the second magnetron sputtering target include a water-cooled backplate, a magnet assembly, a target base, and a target material connected in sequence from top to bottom. The water-cooled backplate is adapted to be connected to an external water chiller so that the external water chiller can provide cooling circulating water. The water-cooled backplate can transfer heat with the target material to dissipate heat from the target material.

4. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 3, characterized in that, Both the first magnetron sputtering target and the second magnetron sputtering target include a shield. The shield is connected to the target base and has a first state and a second state. In the first state, the shield covers the target material to prevent deposition and contamination of the target material. In the second state, the shield exposes the target material so that the target material can perform magnetron sputtering on the substrate.

5. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 1, characterized in that, The substrate is a temperature-controlled substrate, which has a working surface facing the first magnetron sputtering target and the second magnetron sputtering target. The working surface is used to place the substrate and contact the substrate surface. The working surface is provided with an insulating coating.

6. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 1, characterized in that, It also includes a first gas source and a second gas source, one of which is an argon gas source and the other is a mixed gas source formed by argon and oxygen. The argon gas source is used to supply gas to the side of the process cavity where the first magnetron sputtering target is located, and the mixed gas source is used to supply gas to the side of the process cavity where the second magnetron sputtering target is located.

7. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 6, characterized in that, It also includes a distributed gas distribution structure, which includes an air inlet pipe and a gas distribution box. The inlet of the air inlet pipe is connected to the first gas source or the second gas source, and the outlet of the air inlet pipe is connected to the gas distribution box. The gas distribution box is located in the process chamber and has a first side facing the sputtering area. The first side is provided with spray holes. The nozzles extend from top to bottom and are arranged at an angle toward the substrate. There are multiple nozzles arranged in an array on the first side.

8. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 7, characterized in that, The axial direction of the nozzle forms an angle α with the reference plane, and α is 30°-50°.

9. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 1, characterized in that, Also includes: A film thickness online monitoring component 1 includes a first QCM sensor and a film thickness gauge. The first QCM sensor is installed in the process cavity and arranged near the sputtering area. The film thickness gauge is located outside the machine body and can communicate with the first QCM sensor to obtain film thickness information of the sputtered thin film on the substrate. And / or, The second online film thickness monitoring component is a laser interferometry monitoring component installed in the process cavity. The laser interferometry monitoring component is used to monitor the film thickness information of the sputtered thin film on the substrate.

10. The magnetron sputtering apparatus for preparing a large-area Mg-doped NiO hole transport layer according to claim 9, characterized in that, The online film thickness monitoring component also includes a second QCM sensor, which is installed in the process chamber and arranged adjacent to the sputtering area. The second QCM sensor and the first QCM sensor are arranged at intervals in the vertical direction. One of the first QCM sensor and the second QCM sensor is used to monitor the film thickness at the center of the sputtered film on the substrate, and the other is used to monitor the film thickness at the edge of the sputtered film on the substrate.

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