Wafer processing apparatus and CVD reaction apparatus

CN122522218APending Publication Date: 2026-08-07WUXI LEADPRO TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
WUXI LEADPRO TECH CO LTD
Filing Date
2025-02-06
Publication Date
2026-08-07

AI Technical Summary

Technical Problem

[0004]发明目的:本申请实施例提供一种晶圆处理装置,旨在克服目前处理室结构布局复杂,预设的传输路径容易对反应腔的完整性或者反应腔内部件的洁净度产生影响的技术问题;本申请实施例的另一目的是提供一种CVD反应设备

Benefits of technology

[0019] Beneficial Effects: The wafer processing apparatus of this application includes a processing chamber, an air intake body, and a drive assembly. The processing chamber has a reaction chamber and an air intake channel communicating with the reaction chamber. The air intake channel and the reaction chamber extend along a first direction. The processing chamber has an air intake port communicating with the air intake channel. The air intake body is connected to the air intake port of the processing chamber to introduce external gas into the reaction chamber in a direction parallel to the first direction. The drive assembly is connected to the air intake body and can drive the air intake body so that the air intake body has at least a first position and a second position relative to the processing chamber. In the first position, the air intake body docks with the processing chamber and seals the air intake port. In the second position, the air intake body moves away from the processing chamber and opens the air intake port in the first direction. When the air intake body seals the air intake port, the air outlet of the air intake body communicates with the air intake channel. The intake body is switched between a first position and a second position by a drive component. When the intake body is in the first position, it docks with the processing chamber and seals the intake port, ensuring the airtightness of the transmission path during the gas transfer from the intake body to the reaction chamber of the processing chamber. When the intake body is in the second position, it moves away from the processing chamber and opens the intake port, allowing wafer replacement operations to be performed inside the processing chamber through the existing intake channel. This eliminates the need for lifting and lowering of internal cavity components and the need for additional transmission channels, avoiding any impact on the environment or integrity of the reaction chamber and facilitating operation and maintenance.

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Abstract

This application discloses a wafer processing apparatus and a CVD reaction device, belonging to the field of semiconductor technology. The wafer processing apparatus includes a processing chamber, an inlet body, and a drive assembly. The processing chamber has a reaction chamber and an inlet channel communicating with the reaction chamber. The inlet channel and the reaction chamber extend along a first direction, and the processing chamber has an inlet port communicating with the inlet channel. The inlet body is connected to the inlet port to introduce external gas into the reaction chamber. The drive assembly is connected to the inlet body and can drive the inlet body to have at least a first position and a second position relative to the processing chamber. In the first position, the inlet body is aligned with the processing chamber and seals the inlet port, and the outlet of the inlet body is communicating with the inlet channel. In the second position, the inlet body is away from the processing chamber and the inlet port is open in the first direction. This application reduces the number of openings in the processing chamber, improves the functionality of the inlet body, and facilitates maintenance.
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Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a wafer processing apparatus and CVD reaction equipment. Background Technology

[0002] Currently, wafer processing equipment includes a processing chamber and an air intake body (nozzle). The processing chamber forms a processing space for performing surface treatment processes on the substrate and has an inlet and outlet for the substrate to enter and exit the processing space. The inlet and outlet are opened and closed by setting a gate valve structure. The processing chamber also has an assembly port for installing the air intake body.

[0003] Typically, the air intake direction of the main air intake body intersects with the transfer direction of the substrate to avoid interference. However, this complex layout of the processing chamber with numerous openings can easily affect the integrity of the reaction chamber and consequently the uniformity of the gas field. Alternatively, a new transfer path can be created by raising or lowering the base or the cover to transfer the substrate. However, since the base or cover is part of the reaction chamber, it is prone to contamination during the raising or lowering process. This can lead to a decrease in the cleanliness of the chamber environment and a longer recovery time after the transfer operation. Summary of the Invention

[0004] Purpose of the invention: The embodiments of this application provide a wafer processing apparatus, which aims to overcome the technical problems of complex processing chamber structure layout and the fact that the preset transmission path can easily affect the integrity of the reaction chamber or the cleanliness of the components inside the reaction chamber; another purpose of the embodiments of this application is to provide a CVD reaction device.

[0005] Technical solution: This application provides a wafer processing apparatus, including:

[0006] The processing chamber has a reaction chamber and an air inlet channel communicating with the reaction chamber. The air inlet channel and the reaction chamber extend along a first direction. The processing chamber has an air inlet communicating with the air inlet channel.

[0007] An air intake body is connected to the air inlet of the processing chamber to introduce external gas into the reaction chamber in a direction parallel to the first direction;

[0008] A drive assembly is connected to the air intake body, which is capable of driving the air intake body to have at least a first position and a second position relative to the processing chamber. In the first position, the air intake body is docked with the processing chamber and covers the air inlet. In the second position, the air intake body is away from the processing chamber and opens the air inlet in the first direction.

[0009] When the air intake body covers the air intake port, the air outlet of the air intake body is connected to the air intake channel.

[0010] In some embodiments, the drive assembly includes a lifting member and a translating member, the translating member being connected to the telescopic end of the lifting member, the lifting member being able to drive the air intake body to move in a second direction, and the translating member being able to drive the air intake body to move in a first direction, the first direction being perpendicular to the second direction.

[0011] In some embodiments, the wafer processing apparatus further includes a seal disposed on the mating surface of the air intake body and / or on the mating surface of the processing chamber, the seal being disposed around the air intake port, and when the air intake body is in the first position, the seal is sandwiched between the air intake body and the processing chamber to form a seal between the air intake body and the processing chamber.

[0012] In some embodiments, the processing chamber further includes a connector fixedly disposed outside the air inlet. The connector includes a first channel that communicates with the air inlet channel through the air inlet. In the first position, the air inlet body is connected to the connector to cover the air inlet.

[0013] In some embodiments, the mating body has a guide groove on the side opposite to the processing chamber, and the driving assembly can drive the air intake body to contact the groove wall of the guide groove and fit with the mating body under the guidance of the groove wall.

[0014] In some embodiments, the adapter includes an air intake panel that docks with the air intake body, and the air intake body includes an adapter panel corresponding to the air intake panel. In the first position, the air intake panel and the adapter panel are sealed together.

[0015] In some embodiments, the mating panel is provided with multiple sets of second channels, the second channels being connected to the air outlet. The mating body further includes multiple air inlet connectors and air outlet connectors connected to each of the air inlet connectors. The air inlet connectors are connected to external gas pipelines, and the air outlet connectors pass through the air inlet panel. When the air inlet body is in the first position, the air outlet connectors are partially inserted into the second channels so that multiple external gases can be independently introduced into the air inlet body through the mating body.

[0016] In some embodiments, the wafer processing apparatus further includes a housing and a pressure control assembly. The housing has a receiving cavity, the air intake body and the air inlet are located in the receiving cavity, the pressure control assembly is in communication with the receiving cavity, and when the air intake body is in the first position, the air pressure in the receiving cavity is not less than the air pressure in the reaction chamber.

[0017] In some embodiments, the housing includes a valve assembly, the valve assembly, the air inlet, the air intake channel, and the reaction chamber are arranged sequentially on a straight line parallel to the first direction, and when the air intake body is in the second position, the wafer processing apparatus forms at least one transmission channel from the valve assembly to the reaction chamber.

[0018] This application also discloses a CVD reaction apparatus, including a transport module and a wafer processing device as described in the above embodiments. The transport module includes a transfer chamber located on the side of the wafer processing device near the air inlet.

[0019] Beneficial Effects: The wafer processing apparatus of this application includes a processing chamber, an air intake body, and a drive assembly. The processing chamber has a reaction chamber and an air intake channel communicating with the reaction chamber. The air intake channel and the reaction chamber extend along a first direction. The processing chamber has an air intake port communicating with the air intake channel. The air intake body is connected to the air intake port of the processing chamber to introduce external gas into the reaction chamber in a direction parallel to the first direction. The drive assembly is connected to the air intake body and can drive the air intake body so that the air intake body has at least a first position and a second position relative to the processing chamber. In the first position, the air intake body docks with the processing chamber and seals the air intake port. In the second position, the air intake body moves away from the processing chamber and opens the air intake port in the first direction. When the air intake body seals the air intake port, the air outlet of the air intake body communicates with the air intake channel. The intake body is switched between a first position and a second position by a drive component. When the intake body is in the first position, it docks with the processing chamber and seals the intake port, ensuring the airtightness of the transmission path during the gas transfer from the intake body to the reaction chamber of the processing chamber. When the intake body is in the second position, it moves away from the processing chamber and opens the intake port, allowing wafer replacement operations to be performed inside the processing chamber through the existing intake channel. This eliminates the need for lifting and lowering of internal cavity components and the need for additional transmission channels, avoiding any impact on the environment or integrity of the reaction chamber and facilitating operation and maintenance.

[0020] The CVD reaction apparatus of this application includes the wafer processing apparatus as described in the above embodiments, and therefore can have all the technical features and effects of the above wafer processing apparatus, which will not be repeated here. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of a wafer processing apparatus according to the present application, in which the air intake body is located at the first position;

[0023] Figure 2 This is a schematic diagram of a wafer processing apparatus according to the present application, in which the air intake body moves along a first direction;

[0024] Figure 3 This is a schematic diagram of a wafer processing apparatus according to the present application, in which the air intake body is located in the second position;

[0025] Figure 4 This is a schematic diagram showing the assembly relationship between the air intake body and the drive assembly in a wafer processing apparatus according to this application;

[0026] Figure 5 for Figure 2 A magnified view of a portion of point A in the middle;

[0027] Figure 6 This is a schematic diagram of a wafer processing apparatus according to another embodiment of the present application, in which the air intake body is located in the first position and is sealed and fitted with the mating body;

[0028] Figure 7 This is a schematic diagram of the structure of the air intake body of a wafer processing apparatus according to another embodiment of this application, and the driving component is also shown in the figure;

[0029] Figure 8 This is a schematic diagram of a wafer processing apparatus according to another embodiment of the present application, in which the air intake body is located in the second position;

[0030] Figure 9 This is a schematic diagram of the structure of the connector in an embodiment of this application;

[0031] Reference numerals: 1. Processing chamber; 10. Reaction chamber; 11. Air inlet channel; X. First direction; 100. Air inlet; 2. Air inlet body; 3. Drive assembly; a. First position; b. Second position; 200. Air outlet; 31. Lifting component; 32. Translation component; 311. Telescopic end; Y. Second direction; 4. Sealing component; 201. Butt joint surface; 101. Mating surface; 12. Mating body; 120. First channel; 121. Guide groove; 122. Air inlet connector; 123. Air inlet panel; 124. Air outlet connector; 202. Mating panel; 2020. Second channel; 5. Housing; 50. Receiving cavity; 6. Valve assembly; 7. Transport module. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0033] In the description of this application, it should be understood that the terms "upper," "lower," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," and "third," etc., are only for the convenience of description and are used to name parts or embodiments by number, and do not imply any order of importance between the parts or embodiments.

[0034] It should also be noted that in the accompanying drawings of this application, an arrow marked X indicates the first direction, and an arrow marked Y indicates the second direction. The introduction of the first and second directions in the description of this application is to more clearly define the structure and relative positional relationships of the components in a wafer processing apparatus and CVD reaction equipment. In actual implementation, the first direction is generally horizontal, and the second direction is generally vertical, with the first and second directions perpendicular to each other, to optimize the layout of a wafer processing apparatus and CVD reaction equipment. In the description of this application, "perpendicular" means completely perpendicular to 90° or almost completely perpendicular; for example, an angle between 80° and 100° is considered perpendicular. Similarly, "parallel" means completely parallel or almost completely parallel; for example, a completely parallel angle within 10° is considered parallel.

[0035] As a preamble to the embodiments of this application, the wafer processing apparatus includes a processing chamber and an air intake body (nozzle). The processing chamber forms a processing space for performing surface treatment processes on a substrate and has inlets and outlets for the substrate to enter and exit the processing space. A valve structure is used to open and close the inlets and outlets. The processing chamber also has an assembly port for mounting the air intake body. Typically, the air intake direction of the air intake body intersects with the substrate's transport direction to avoid interference. However, this processing chamber has a complex structural layout and numerous openings, which can easily affect the integrity of the reaction chamber and consequently the uniformity of the gas field. Alternatively, a new transport path can be formed by raising or lowering the base or the cover to transport the substrate. However, in this method, since the base or cover is part of the reaction chamber, contamination of the reaction chamber is easily caused during the raising and lowering process. After the transport operation, this can lead to a decrease in the cleanliness of the chamber environment and a longer recovery time.

[0036] In view of this, embodiments of this application provide a wafer processing apparatus aimed at solving at least one of the above-mentioned technical problems.

[0037] Please see Figures 1 to 9 As shown in the embodiment of this application, the wafer processing apparatus includes a processing chamber 1, an air intake body 2, and a drive assembly 3. The processing chamber 1 has a reaction chamber 10 and an air intake channel 11 communicating with the reaction chamber 10. The air intake channel 11 and the reaction chamber 10 extend along a first direction X. The processing chamber 1 has an air inlet 100 communicating with the air intake channel 11. The processing chamber 1 is the core enclosed space in the wafer processing apparatus for performing various wafer processing operations. Its main function is to provide a relatively independent, stable, and controlled environment to ensure that the wafer is not contaminated by external impurities (such as dust, particles, etc.) during processing. The air intake body 2 is connected to the air inlet 100 of the processing chamber 1 to introduce external gas into the reaction chamber 10 in a direction parallel to the first direction X. The air intake body 2 can provide the processing chamber 1 with various gases required for the wafer processing process; these gases may be reactive gases, protective gases, or cleaning gases, etc. The drive assembly 3 is connected to the air intake body 2. The drive assembly 3 can drive the air intake body 2 so that the air intake body 2 has at least a first position a and a second position b relative to the processing chamber 1. In the first position a, the air intake body 2 is connected to the processing chamber 1 and the air inlet 100 is covered. In the second position b, the air intake body 2 is away from the processing chamber 1 and the air inlet 100 is open in the first direction X. When the air intake body 2 covers the air inlet 100, the air outlet 200 of the air intake body 2 is connected to the air intake channel 11.

[0038] It is important to understand that the air inlet channel 11 of the processing chamber 1 and the reaction chamber 10 extend along the first direction X, and the air inlet 100 is connected to the air inlet channel 11. This allows the gas introduced by the air inlet body 2 to enter the reaction chamber 10 relatively smoothly along the specific first direction X, which is beneficial for forming a relatively stable and uniform gas flow field within the reaction chamber 10. The air inlet body 2 is driven by the drive assembly 3, so that the air inlet body 2 has at least a first position a and a second position b relative to the processing chamber 1. When the air inlet body 2 is in the first position a, the air inlet body 2 is connected to the processing chamber 1 and the air inlet 100 is sealed. On the one hand, this facilitates gas transmission and processing operations, improving operational flexibility. On the other hand, it ensures the airtightness of the gas during the transmission from the air inlet body 2 to the reaction chamber 10 of the processing chamber 1, reducing the possibility of gas leakage and avoiding instability in the processing environment and potential hazards to operators caused by gas leakage. At the same time, good connection also helps to maintain stable gas pressure within the reaction chamber 10. For some pressure-sensitive processes (such as chemical vapor deposition), a stable gas pressure environment is beneficial for improving processing quality.

[0039] When the air intake body 2 is in the second position b, it is away from the processing chamber 1 and the air inlet 100 is open, facilitating simple maintenance, cleaning, or wafer replacement operations inside the processing chamber 1. This flexible position switching design improves the ease of operation and maintenance efficiency of the wafer processing device. The position of the air intake body 2 is controlled by the drive assembly 3, enabling the sealing and opening of the air inlet 100. This quick-release docking method facilitates rapid response in position switching of the air intake body 2. Simultaneously, precise position control helps ensure the sealing and gas transmission stability each time the air intake body 2 docks with the processing chamber 1, further improving the consistency of processing quality.

[0040] Please see Figure 4 As shown, in some embodiments, the drive assembly 3 includes a lifting member 31 and a translating member 32. The translating member 32 is connected to the telescopic end 311 of the lifting member 31. The lifting member 31 can drive the air intake body 2 to move in the second direction Y, and the translating member 32 can drive the air intake body 2 to move in the first direction X. It should be understood that by precisely controlling the movement of the lifting member 31 and the translating member 32 through a preset drive path, the position of the air intake body 2 can be automatically adjusted, thereby improving production efficiency, reducing errors caused by manual operation, and making the entire wafer processing process more standardized and repeatable, which helps to improve product consistency and yield. On the other hand, through the coordinated work of the lifting member 31 and the translating member 32, the air intake body 2 is provided with motion control capabilities in two different directions, enabling the air intake body 2 to achieve more comprehensive and precise position adjustment in three-dimensional space, improving operational flexibility.

[0041] Please see Figure 2 and Figure 5 As shown, in some embodiments, the wafer processing apparatus further includes a seal 4. The seal 4 is disposed on the mating surface 201 of the air intake body 2 and / or on the mating surface 101 of the processing chamber 1. The seal 4 surrounds the air inlet 100. When the air intake body 2 is in the first position a, the seal 4 is sandwiched between the air intake body 2 and the processing chamber 1 to form a seal between the air intake body 2 and the processing chamber 1. It should be understood that by sandwiching the seal 4 between the air intake body 2 and the processing chamber 1, and by surrounding the air inlet 100, a tight seal is formed between the two, which helps to maintain stable environmental conditions in the processing chamber 1. At the same time, the seal 4 effectively prevents gas from contacting the connection parts, reduces equipment damage caused by gas corrosion, extends the service life of the air intake body 2 and the processing chamber 1, and reduces the maintenance and replacement costs of the equipment. Through the elastic deformation and sealing characteristics of the seal 4 itself, a good sealing effect is maintained between the air intake body 2 and the processing chamber 1, ensuring that no gas leakage occurs under different pressure conditions, and enhancing the adaptability of the equipment to different processes.

[0042] Please see Figure 6 and Figure 9 As shown, in some embodiments, the processing chamber 1 further includes a coupling body 12, which is fixedly disposed outside the air inlet 100. The coupling body 12 includes a first channel 120, which communicates with the air inlet channel 11 through the air inlet 100. In the first position a, the air intake body 2 is coupled with the coupling body 12 to cover the air inlet 100. It should be understood that by fixing the coupling body 12 on the processing chamber 1, compared to the air intake body 2 directly docking with the processing chamber 1 body, the coupling body 12 shares part of the pressure borne by the connection between the air intake body 2 and the processing chamber 1, reducing the wear and deformation that may occur around the air inlet 100 of the processing chamber 1 due to long-term docking and separation operations, and improving the stability and durability of the entire connection structure. At the same time, the coupling body 12 can provide positioning for the precise docking of the air intake body 2, improving docking efficiency.

[0043] Specifically, the first channel 120 of the connector 12 is connected to the intake channel 11 through the air inlet 100, providing a smoother flow path and buffer space for gas to enter the reaction chamber 10 of the processing chamber 1 from the intake body 2. Furthermore, the first channel 120 can, to a certain extent, isolate and protect the intake channel 11. When the intake body 2 is in a non-connected state, external impurities and dust are less likely to directly enter the intake channel 11 through the air inlet 100, reducing the risk of contamination of the intake channel 11. Simultaneously, during the connection and separation of the intake body 2 and the processing chamber 1, the first channel 120 can also reduce damage to the intake channel 11 that may be caused by operation, ensuring the integrity of the intake channel 11 and the stability of gas transmission performance.

[0044] Please see Figure 6 and Figure 9 As shown, in some embodiments, the mating body 12 has a guide groove 121 on the side facing away from the processing chamber 1. The drive assembly 3 can drive the air intake body 2 to contact the groove wall of the guide groove 121 and fit with the mating body 12 under the guidance of the groove wall of the guide groove 121. It should be understood that by setting the guide groove 121 on the mating body 12, a guiding path is provided for the movement of the air intake body 2, limiting the range of movement of the air intake body 2, and avoiding collisions with the mating body 12 or other components of the processing chamber 1 due to excessive movement or directional deviation during the docking process. This effectively avoids the air intake body 2 from shifting or misaligning during the docking process, ensuring that each docking is completed accurately, and making the path and position of each docking highly repeatable, which helps to maintain the consistency of gas transmission, sealing and other conditions, thereby improving the product yield and production efficiency. Furthermore, the guide groove 121 simplifies the driving trajectory of the drive assembly 3 and improves the docking efficiency.

[0045] Please see Figure 7 and Figure 9 As shown, in some embodiments, the mating body 12 includes an air intake panel 123 that docks with the air intake body 2, and the air intake body 2 includes a mating panel 202 corresponding to the air intake panel 123. In the first position a, the air intake panel 123 and the mating panel 202 are sealed together. It should be understood that by sealing the air intake panel 123 and the mating panel 202 in the first position a, on the one hand, the planar sealing structure is easier to achieve a good sealing effect compared to other complex or irregular sealing forms; on the other hand, the air intake panel 123 and the mating panel 202 are parallel to each other and fit together over a large area. Under the action of external forces such as the movement of the air intake body 2 driven by the drive component 3 and the vibration generated during the operation of the equipment, the seal is less likely to be misaligned or deformed, thus improving the operating efficiency and stability of the equipment. In some embodiments, the air intake panel 123 and the mating panel 202 are parallel and both are inclined relative to the first direction X. It should be understood that the inclined arrangement can save space, increase the airflow conduction surface, and reduce the conduction path.

[0046] Please see Figures 7 to 9As shown, in some embodiments, the mating panel 202 is provided with multiple sets of second channels 2020, which are connected to the air outlet 200. The mating body 12 also includes multiple air inlet connectors 122 and multiple air outlet connectors 124, each connected to one of the air inlet connectors 122. The air inlet connectors 122 are connected to external gas pipelines, and the air outlet connectors 124 pass through the air inlet panel 123. When the air inlet body 2 is in the first position a, the air outlet connectors 124 are partially inserted into the second channels 2020, so that multiple external gases can be independently introduced into the air inlet body 2 through the mating body 12. This prevents the gas pipeline from moving along with the air inlet body 2 when it moves, increasing the convenience of switching the air inlet body 2 between the first position a and the second position b. It should be understood that different wafer processing technologies have different requirements for the type, flow rate, pressure, and sequence of gases. The structure of multiple sets of second channels 2020 and multiple air inlet connectors 122 can be flexibly configured and adjusted according to different process requirements. By adjusting parameters such as the gas source connected to the air inlet connector 122 and the flow control of the second channel 2020, different process modes can be quickly switched, enabling the wafer processing unit to quickly switch between different processes, thereby improving the equipment's process adaptability and production efficiency.

[0047] Specifically, when the outlet connector 124 is partially inserted into the second channel 2020, this insertion-type connection can employ a sealing structure, such as a sealing ring or sealant at the connection between the outlet connector 124 and the second channel 2020. Because the insertion-type connection is relatively stable, it effectively prevents gas leakage during device operation. Furthermore, the insertion of the outlet connector 124 into the second channel 2020 provides a stable connection structure between the air intake body 2 and the connecting body 12.

[0048] Please see Figures 1 to 3 As shown, see reference Figure 6 and Figure 8 As shown, in some embodiments, the wafer processing apparatus further includes a housing 5 and a pressure control assembly (not shown). The housing 5 has a receiving cavity 50, and the air inlet body 2 and air inlet 100 are located within the receiving cavity 50. The pressure control assembly is connected to the receiving cavity 50. When the air inlet body 2 is in the first position a, the air pressure in the receiving cavity 50 is not less than the air pressure in the reaction chamber 10. It should be understood that the above design can ensure that when the sealing between the air inlet body 2 and the processing chamber is poor, the reaction gas is prevented from leaking out of the reaction chamber 10, thus avoiding contamination of the external structure of the processing chamber and improving the safety of the equipment. Specifically, the pressure control assembly is connected to the receiving cavity 50 and can precisely control the air pressure within the receiving cavity 50. Through the pressure control assembly, the air pressure within the receiving cavity 50 can be adjusted according to specific process requirements, providing a safe and good processing environment for the implementation of different processes.

[0049] Please see Figure 8 As shown, in some embodiments, the housing 5 includes a valve assembly 6. The valve assembly 6, the air inlet 100, the air intake channel 11, and the reaction chamber 10 are arranged sequentially on a straight line parallel to the first direction X. When the air intake body 2 is in the second position b, the wafer processing apparatus forms at least one transmission channel from the valve assembly 6 to the reaction chamber 10. It should be understood that when the air intake body 2 is in the second position b, the transmission channel formed from the valve assembly 6 to the reaction chamber 10 is more efficient and direct, improving the wafer transmission efficiency, reducing obstacles and time consumption during transmission, thereby improving the overall production efficiency of the wafer processing apparatus. During equipment maintenance, the transmission channel makes the inspection and maintenance of the inside of the reaction chamber 10 and related components more convenient. Specifically, the valve assembly 6, as the starting end of the transmission channel, has a safety protection function and can effectively control the opening and closing of the transmission channel under different process conditions.

[0050] This application also discloses a CVD reaction apparatus, including a transport module 7 and the wafer processing device described in the above embodiments. The transport module 7 includes a transfer chamber located on the side of the wafer processing device near the air inlet 100. It should be understood that the location of the transfer chamber of the transport module 7 on the side of the wafer processing device near the air inlet 100 achieves seamless connection between the wafer transport and processing stages. The close cooperation between the transport module 7 and the wafer processing device makes the process flow within the CVD reaction apparatus smoother, improves overall production efficiency, and reduces the production cycle. Simultaneously, it helps reduce interference from the external environment during wafer transport, thereby improving the stability of the CVD reaction and the product yield. Combining the transport module 7 with the wafer processing device results in a relatively compact overall layout with clearly defined functional areas. This facilitates equipment maintenance and centralized management. Due to their proximity, the operational space limitations during maintenance are reduced, improving maintenance efficiency and lowering maintenance costs. Furthermore, the CVD reaction apparatus of this application embodiment can possess all the technical features and effects of the aforementioned wafer processing device, which will not be elaborated upon here.

[0051] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0052] The wafer processing apparatus and CVD reaction equipment provided in the embodiments of this application have been described in detail above, and specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A wafer processing apparatus, characterized in that, include: The processing chamber (1) has a reaction chamber (10) and an air inlet channel (11) communicating with the reaction chamber (10). The air inlet channel (11) and the reaction chamber (10) extend along a first direction (X). The processing chamber (1) has an air inlet (100) communicating with the air inlet channel (11). The air intake body (2) is connected to the air inlet (100) of the processing chamber (1) to introduce external gas into the reaction chamber (10) in a direction parallel to the first direction (X); A drive assembly (3) is connected to the air intake body (2). The drive assembly (3) is capable of driving the air intake body (2) so that the air intake body (2) has at least a first position (a) and a second position (b) relative to the processing chamber (1). In the first position (a), the air intake body (2) is docked with the processing chamber (1) and the air inlet (100) is covered. In the second position (b), the air intake body (2) is away from the processing chamber (1) and the air inlet (100) is open in the first direction (X). When the air intake body (2) covers the air intake port (100), the air outlet (200) of the air intake body (2) is connected to the air intake channel (11).

2. The wafer processing apparatus according to claim 1, characterized in that, The drive assembly (3) includes a lifting member (31) and a translating member (32). The translating member (32) is connected to the telescopic end (311) of the lifting member (31). The lifting member (31) can drive the air intake body (2) to move in the second direction (Y). The translating member (32) can drive the air intake body (2) to move in the first direction (X). The first direction (X) is perpendicular to the second direction (Y).

3. The wafer processing apparatus according to claim 1, characterized in that, The wafer processing apparatus further includes a sealing element (4), which is disposed on the mating surface (201) of the air intake body (2) and / or on the mating surface (101) of the processing chamber (1). The sealing element (4) is disposed around the air inlet (100). When the air intake body (2) is located in the first position (a), the sealing element (4) is sandwiched between the air intake body (2) and the processing chamber (1) to form a seal between the air intake body (2) and the processing chamber (1).

4. The wafer processing apparatus according to claim 1, characterized in that, The processing chamber (1) further includes a connector (12), which is fixedly disposed outside the air inlet (100). The connector (12) includes a first channel (120), which is connected to the air intake channel (11) through the air inlet (100). In the first position (a), the air intake body (2) is connected to the connector (12) to cover the air inlet (100).

5. The wafer processing apparatus according to claim 4, characterized in that, The adapter (12) has a guide groove (121) on the side away from the processing chamber (1). The drive assembly (3) can drive the air intake body (2) to contact the groove wall of the guide groove (121) and fit with the adapter (12) under the guidance of the groove wall of the guide groove (121).

6. The wafer processing apparatus according to claim 4, characterized in that, The adapter (12) includes an air intake panel (123) that docks with the air intake body (2). The air intake body (2) includes an adapter panel (202) corresponding to the air intake panel (123). In the first position (a), the air intake panel (123) and the adapter panel (202) are sealed together.

7. The wafer processing apparatus according to claim 6, characterized in that, The adapter panel (202) is provided with multiple sets of second channels (2020), which are connected to the air outlet (200). The adapter body (12) also includes multiple air inlet connectors (122) and air outlet connectors (124) connected to each air inlet connector (122). The air inlet connectors (122) are connected to external gas pipelines. The air outlet connectors (124) pass through the air inlet panel (123). When the air inlet body (2) is in the first position (a), the air outlet connectors (124) are partially inserted into the second channels (2020) so that multiple external gases can be independently introduced into the air inlet body (2) through the adapter body (12).

8. The wafer processing apparatus according to any one of claims 1 to 7, characterized in that, The wafer processing apparatus further includes a housing (5) and a pressure control component. The housing (5) has a receiving cavity (50). The air intake body (2) and the air inlet (100) are located in the receiving cavity (50). The pressure control component is connected to the receiving cavity (50). When the air intake body (2) is located in the first position (a), the air pressure in the receiving cavity (50) is not less than the air pressure in the reaction chamber (10).

9. The wafer processing apparatus according to claim 8, characterized in that, The housing (5) includes a valve assembly (6), the valve assembly (6), the air inlet (100), the air inlet channel (11) and the reaction chamber (10) are arranged in sequence on a straight line parallel to the first direction (X). When the air inlet body (2) is in the second position (b), the wafer processing device forms at least one transmission channel from the valve assembly (6) to the reaction chamber (10).

10. A CVD reaction apparatus, characterized in that, The device includes a transport module (7) and a wafer processing apparatus as described in any one of claims 1 to 9, wherein the transport module (7) includes a transmission chamber located on the side of the wafer processing apparatus near the air inlet (100).