An interface micro-crack damage evaluation method and device based on complex dielectric response

Abstract

The application provides an interface microcrack damage evaluation method and device based on complex dielectric response, which is used for building a damage evaluation architecture based on the electromagnetic scattering response-effective complex dielectric response mapping relationship caused by the interface microcrack concerned, the equivalent inversion process and the damage evaluation process based on the multi-index joint determination, so as to realize quantitative or semi-quantitative evaluation of the interface microcrack geometric state, filling state and damage degree, solve the problem that the prior art mainly faces the overall dielectric measurement of homogeneous materials or conventional multiphase medium, and is difficult to stably characterize, parameter inversion and damage evaluation of the interface microcrack which is a millimeter level and smaller scale defect, has good recognition ability, state interpretation ability and engineering applicability to the interface microdamage, and can provide good data support for underground engineering.

Description

Technical Field

[0001] This application relates to the field of geology, specifically to a method and apparatus for assessing interfacial microcrack damage based on complex dielectric response. Background Technology

[0002] In underground engineering, interfaces such as the cement sheath-stratum interface, lining-surrounding rock interface, grout-bedrock interface, and other layered composite structures are widely present. During long-term service, these interfaces are susceptible to damage such as local debonding, peeling, and microcracks due to factors such as load disturbance, environmental erosion, cyclic action, and material mismatch. Therefore, the corresponding interface detection work, or geological exploration work, is an important emerging and specialized surveying service.

[0003] Since microcracks at the interface are typically small in size, highly concealed, have significant interface properties, and complex internal filling states, their formation and evolution are often accompanied by the development of local leakage channels, redistribution of the medium, and changes in the mechanical and electromagnetic properties of the interface, which in turn have an adverse effect on the structural sealing, service stability, and long-term safety.

[0004] Unlike general volume defects, interface cracks typically have characteristics such as millimeter-scale or even smaller size, thin layer, small aperture, strong interface properties, and high concealment. Their electromagnetic response is easily affected by the differences in media on both sides of the interface, multiple reflection interference, and changes in the state of the filling medium inside the crack.

[0005] Existing methods for detecting interface damage mainly include ultrasound, X-ray, CT, and conventional electromagnetic testing. Among them, the waveguide method combined with a vector network analyzer can measure material scattering parameters in a specific frequency band and further invert the material's complex dielectric parameters, which has become an important means of electromagnetic parameter characterization.

[0006] However, existing technologies are mainly geared towards overall dielectric measurement of homogeneous materials or conventional multiphase media. For small-scale interfacial cracks, there is still a lack of dedicated technical solutions for damage identification and condition assessment. In particular, under the combined effects of crack geometry, spatial distribution and filling medium, traditional methods are unable to effectively distinguish different influencing factors and lack an interfacial microcrack damage assessment mechanism based on multi-index joint judgment, which limits the identification capability and assessment accuracy. Summary of the Invention

[0007] This application provides a method and apparatus for assessing interface microcrack damage based on complex dielectric response. It establishes a damage assessment framework based on the mapping relationship between the electromagnetic scattering response and effective complex dielectric response caused by the interface microcrack, the equivalent inversion process, and a damage assessment process based on multi-index joint judgment. This framework enables quantitative or semi-quantitative assessment of the geometric state, filling state, and damage degree of interface microcracks. It solves the problem that existing technologies mainly focus on the overall dielectric measurement of homogeneous materials or conventional multiphase media, and are difficult to stably characterize, invert parameters, and assess the damage of millimeter-scale and smaller defects such as interface microcracks. It has good identification ability, state interpretation ability, and engineering applicability for interface micro-damage, and can provide good data support for underground engineering.

[0008] Firstly, this application provides a method for assessing interfacial microcrack damage based on complex dielectric response, the method comprising: For the target underground project, layered or composite structures with interfaces are selected as test objects. The test objects include complete interface reference samples and test samples with microcracks at the interfaces. The test object was tested by the band test device in the main mode TE10 mode to obtain the measured scattering parameters. Based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks, and with an inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters, the effective complex dielectric parameters of the interface microcracks are inverted point by point at each frequency. The response index characterizing the state of microcracks at the interface was calculated using measured scattering parameters and effective complex dielectric parameters. The geometric damage characterization and filling loss characterization of the microcracks at the interface are calculated using response indices. By combining geometric damage characterization quantity, filling loss characterization quantity, geometric damage characterization quantity threshold, and filling loss characterization quantity threshold, the damage state of the sample under test is determined, and the loss state determination result corresponding to the microcracks at the interface is obtained.

[0009] Secondly, this application provides a device for assessing interfacial microcrack damage based on complex dielectric response, the device comprising: The selection unit is used to select layered or composite structures with interfaces as test objects for the target underground project. The test objects include complete interface reference samples and test samples with microcracks at the interfaces. The test unit is used to test the test object by the band test device in the main mode TE10 mode to obtain the measured scattering parameters. The inversion unit is used to invert the effective complex dielectric parameters of the interface microcracks on a frequency-by-frequency basis, based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks, and the inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters. The computational unit is used to calculate the response index characterizing the state of microcracks at the interface using measured scattering parameters and effective complex dielectric parameters. The calculation unit is also used to calculate the geometric damage characterization and filling loss characterization of the microcracks at the interface through response indices. The determination unit is used to combine geometric damage characterization quantity, filling loss characterization quantity, geometric damage characterization quantity threshold and filling loss characterization quantity threshold to determine the damage state of the sample under test and obtain the loss state determination result corresponding to the microcrack at the interface.

[0010] Thirdly, this application provides a processing device, including a processor and a memory, wherein a computer program is stored in the memory, and the processor executes the method provided in the first aspect of this application when it invokes the computer program in the memory.

[0011] Fourthly, this application provides a computer-readable storage medium storing a plurality of instructions adapted for loading by a processor to execute the method provided in the first aspect of this application.

[0012] From the above, it can be concluded that this application has the following beneficial effects: Under the objective of evaluating interfacial microcracks, this application establishes a damage assessment framework based on the mapping relationship between electromagnetic scattering response and effective complex dielectric response caused by interfacial microcracks, the equivalent inversion process, and the damage assessment process based on multi-index joint judgment. This framework enables quantitative or semi-quantitative assessment of the geometric state, filling state, and damage degree of interfacial microcracks. It solves the problem that existing technologies are mainly aimed at the overall dielectric measurement of homogeneous materials or conventional multiphase media, and are difficult to stably characterize, invert parameters, and assess the damage of interfacial microcracks at the millimeter scale and smaller. It has good identification ability, state interpretation ability, and engineering applicability for interfacial micro-damage and can provide good data support for underground engineering. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1This is a schematic diagram of a method for assessing interfacial microcrack damage based on complex dielectric response, as described in this application. Figure 2 This is a schematic diagram of an example of the band testing device of this application; Figure 3 This is a schematic diagram illustrating an example of the measured scattering parameter test results of this application; Figure 4 A schematic diagram illustrating an example of the effective complex permittivity parameter inversion result of this application; Figure 5 This is a schematic diagram of a structural device for assessing interface microcrack damage based on complex dielectric response, as described in this application. Figure 6 This is a schematic diagram of one type of processing equipment used in this application. Detailed Implementation

[0015] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0016] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than that illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules is not necessarily limited to those explicitly listed, but may include other steps or modules not explicitly listed or inherent to such processes, methods, products, or devices. The naming or numbering of steps appearing in this application does not imply that the steps in the method flow must be performed in the chronological / logical order indicated by the naming or numbering. The execution order of named or numbered process steps can be changed according to the desired technical purpose, as long as the same or similar technical effect is achieved.

[0017] The module division described in this application is a logical division. In practical applications, there may be other division methods. For example, multiple modules may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the shown or discussed mutual coupling, direct coupling, or communication connections may be through interfaces, and the indirect coupling or communication connections between modules may be electrical or other similar forms, none of which are limited in this application. Moreover, the modules or sub-modules described as separate components may or may not be physically separated, may or may not be physical modules, or may be distributed across multiple circuit modules. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution in this application.

[0018] Before introducing the interface microcrack damage assessment method based on complex dielectric response provided in this application, we will first introduce the background content involved in this application.

[0019] The method, apparatus, and computer-readable storage medium for assessing interfacial microcrack damage based on complex dielectric response provided in this application can be applied to processing equipment. Based on the mapping relationship between the electromagnetic scattering response and effective complex dielectric response caused by the interfacial microcracks of interest, the equivalent inversion process, and the damage assessment process based on multi-index joint judgment, a damage assessment framework is established. This enables quantitative or semi-quantitative assessment of the geometric state, filling state, and damage degree of interfacial microcracks. It solves the problem that existing technologies mainly focus on the overall dielectric measurement of homogeneous materials or conventional multiphase media, and are difficult to stably characterize, parametrically invert, and assess the damage of millimeter-scale and smaller defects such as interfacial microcracks. It has good identification ability, state interpretation ability, and engineering applicability for interfacial micro-damage, and can provide good data support for underground engineering.

[0020] The interface microcrack damage assessment method based on complex dielectric response mentioned in this application can be implemented by an interface microcrack damage assessment device based on complex dielectric response, or by different types of processing devices such as servers, physical hosts, or user equipment (UE) that integrate the interface microcrack damage assessment device based on complex dielectric response. The interface microcrack damage assessment device based on complex dielectric response can be implemented in hardware or software. The UE can be a terminal device such as a smartphone, tablet, laptop, desktop computer, or personal digital assistant (PDA). The processing devices can be configured in a device cluster.

[0021] It is understandable that the solution in this application is usually based on existing data or data that has already been collected. Therefore, the processing equipment that implements the interface microcrack damage assessment method based on complex dielectric response of this application or that is equipped with the corresponding application service of the interface microcrack damage assessment method based on complex dielectric response of this application usually only needs to meet the required data processing capabilities, and its specific equipment type and equipment deployment form are quite flexible.

[0022] If there is a need to display the processing progress (including the processing results), the processing device itself can be configured with the required display screen (including touch screen) to display the specific content. Of course, the processing device can also display the specific content through an external display device or other devices with a display screen.

[0023] The following section introduces the interface microcrack damage assessment method based on complex dielectric response provided in this application.

[0024] First, refer to Figure 1 , Figure 1 This paper illustrates a flowchart of the interface microcrack damage assessment method based on complex dielectric response according to this application. The interface microcrack damage assessment method based on complex dielectric response provided by this application may specifically include the following steps S101 to S104: Step S101: For the target underground project, select a layered structure or composite structure with an interface as the test object. The test object includes a complete interface reference sample and a test sample with microcracks at the interface. Understandably, this application is a scheme processing that is carried out after the target underground project (such as related underground energy project) that needs to be evaluated has been determined. Correspondingly, in practical applications, it may involve the triggering of related work tasks, namely the interface microcrack damage assessment task. This task can be initiated manually or autonomously by the system according to the corresponding task initiation strategy.

[0025] The interfacial microcracks involved in this application are characterized by having a scale of millimeters or even smaller, thin layer, small opening, strong interfacial properties, and high concealment.

[0026] As can be seen, the specific operation may involve sampling operations of layered or composite structures with interfaces, and involves two specific samples: a complete interface reference sample and a sample to be tested with microcracks at the interface, which are used as the specific test objects for this evaluation work.

[0027] As an example, taking the sandstone-cement bilayer composite interface, commonly found in underground engineering, as the object of study, in terms of sample construction, sandstone and cement can be selected as representative materials on both sides of the bilayer interface, and the overall size of the prepared sample is [missing information]. The test specimens consist of two layers, forming a composite interface along the contact surface of the two materials. One set of specimens maintains an intact interface and serves as a reference specimen for the complete interface; the other set of specimens has microcracks pre-formed at the interface between the two layers and serves as the test specimen.

[0028] Meanwhile, the interfacial microcracks are preferably millimeter-sized or smaller cracks formed by interfacial peeling, debonding, or local damage.

[0029] As an example, the interface microcracks are preferably set with an aperture of 1 mm, a width of 15 mm, and a length of 10 mm to characterize the thin-layer crack damage formed by millimeter-scale interface peeling or debonding.

[0030] Depending on the needs, different crack inclination angles can be further set to simulate different interface damage morphologies, with the preferred inclination angle being [value missing]. .

[0031] Furthermore, to reflect the differences in electromagnetic response of interfacial microcracks under different media conditions, the cracks can be configured to be filled with air, water, and salt water of different concentrations, with air filling, water filling, and salt water of different concentrations being preferred. , and The NaCl (sodium chloride) solution is used as a brine solution.

[0032] For the materials used, the real parts of the measured relative permittivity of sandstone and cement monomers can be taken as 6.6 and 5.2, respectively.

[0033] Step S102: The test object is tested by the band test device in the main mode TE10 mode to obtain the measured scattering parameters; It should be noted that the waveguide testing equipment involved here (belonging to the category of electromagnetic detection technology) is usually readily available. The purpose of this application is to obtain the parameters required for the scheme based on the waveguide testing conducted by the waveguide testing equipment. Therefore, the waveguide testing equipment can be an externally connected or externally called device, or it can be a device incorporated into a system equipment cluster. Even the device executing this application can itself be the control device / part of the waveguide testing equipment, which is quite flexible. The same applies to the sample preparation equipment involved if the selection of test objects in the previous details involves real-time sample preparation operations, as well as the subsequent result output (including display) equipment.

[0034] The band testing equipment here can also be combined with Figure 2 The schematic diagram of one example of the band testing device of this application is shown for a more intuitive understanding.

[0035] Under these conditions, having obtained both the complete interface reference sample and the test sample containing interfacial microcracks, the band testing device can then perform tests in the TE10 mode (an existing or mature operating mode of the band testing device) to obtain the measured scattering parameters. In terms of details, regarding the setup of the test system, a test platform can be constructed using a rectangular waveguide test fixture and a vector network analyzer, with the WR-137 rectangular waveguide fixture being the preferred choice. Testing should be conducted under constant room temperature conditions. Before testing, a reference system can be established, which includes at least an air reference, a complete interface reference, and a metal short-circuit reference. If necessary, a short-circuit reference can also be included. The air reference can be used to verify the consistency between the test chain and the inversion chain. The air reference and the metal short-circuit reference are used for benchmark calibration or response verification of the vector network analyzer-waveguide fixture system. The complete interface reference can be used as a benchmark object for subsequent differential characterization.

[0036] During testing, a complete interface sample or a sample with cracks is inserted into the rectangular waveguide test section, and the sample is made to fit as closely as possible to the inner wall of the waveguide to reduce the impact of additional air gaps, clamping deviations and end-face contact errors on the test results, thereby obtaining the measured scattering parameters at the corresponding frequency.

[0037] Preferably, the test frequency band is set to 5.35GHz-8.17GHz. To improve the stability of the results, the test can be repeated 5 times for each crack inclination angle and filling condition, and the repeatability of the test can be evaluated accordingly.

[0038] Furthermore, the test object is tested here by a band testing device in the main mode TE10 mode to obtain measured scattering parameters, which may include: The test object is placed in the rectangular waveguide test section of the band test device. Excitation and reception are performed using the dominant mode TE10 within the preset frequency band. Complex scattering parameters at each frequency point are obtained, and the corresponding scattering relationships are expressed as follows: , in, The normalized complex amplitude of the output from port 1 of the band test device. The normalized complex amplitude emitted from port 2 of the band test device. The incident normalized complex amplitude at port 1 of the band test device. The incident normalized complex amplitude at port 2 of the band test device. These are the measured scattering parameters. The reflection coefficient is for the complete interface reference style. The transmission coefficient is for a complete interface reference pattern. Let be the reflection coefficient of the sample to be tested. Let be the transmission coefficient of the sample to be tested. Under single-ended excitation conditions, let ,have: , .

[0039] This provides the raw scattering response data as input for subsequent inversion of the equivalent complex permittivity parameters.

[0040] Step S103: Based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks and the inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters, the effective complex dielectric parameters of the interface microcracks are inverted point by point at each frequency. Understandably, this application involves an equivalent inversion model for interface microcracks, which is established based on a physical forward calculation process under waveguide dominant mode conditions. Using the effective complex dielectric parameter and relevant known structural parameters as inputs, it obtains the model-predicted reflection coefficient and model-predicted transmission coefficient. By minimizing the mismatch between the model-predicted scattering parameters and the measured scattering parameters, it achieves the inversion of the effective complex dielectric parameter of the interface microcracks. Correspondingly, this application also configures an inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters, thereby assisting in the model inversion work.

[0041] Furthermore, for the equivalent inversion model of the microcracks at the interface, this application may have the following specific configurations: The heterogeneous interface structure containing interfacial microcracks is equivalent to a homogeneous equivalent dielectric segment of the same length d as the original test segment in the electromagnetic propagation direction. The effective complex relative permittivity of the homogeneous equivalent dielectric segment can be defined as follows: , in, For the effective complex relative permittivity, For effective energy storage characteristics, and For different effective loss characteristics, Angular frequency, , For frequency, The dielectric constant of air is (To ensure that the inversion results conform to physical realizability, it is preferable to apply this passive constraint to keep the loss term non-negative, thereby eliminating non-physical understanding.) The imaginary unit in complex numbers. In the TE10 master mode, let the waveguide width dimension be... Then the cutoff wavenumber Complex wavenumber in the corresponding homogeneous equivalent medium segment With complex propagation constant It can be represented as: , , , in, The attenuation constant is The phase constant, The permeability of free space, The equivalent wave impedance corresponding to TE mode (similar to TE10 mode above, which is the current operating mode) can be expressed as: , Based on the above original test segment length d and complex propagation constant and equivalent wave impedance The transmission matrix of a uniform equivalent medium segment It can be represented as: , At the port reference impedance is Under the given conditions, the two models predict the scattering parameters. It can be represented as: , , in, For different coefficients to be measured (or undetermined coefficients); Accordingly, the inversion objective function is constructed with the goal of minimizing the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters. It can be represented as: , in, These are different weighting coefficients.

[0042] By solving the above optimization problem at each frequency point, the effective complex dielectric parameters of the interface microcracks under the test configuration can be obtained point by point.

[0043] Furthermore, the self-consistency of the inversion chain can be verified first using an air reference operating condition. When the real part obtained from the inversion under the air operating condition is close to 1 and the imaginary part is close to 0, it can be considered that the testing and inversion process has good stability and reliability.

[0044] It is worth emphasizing that, in terms of the effective complex permittivity parameter inversion here, this application equates the heterogeneous bilayer structure containing interfacial microcracks to a uniform equivalent dielectric segment of the same length as the original test segment in the electromagnetic propagation direction, and takes the effective complex permittivity parameter of this equivalent dielectric segment as the target to be inverted. In other words, what this application inverts is not the intrinsic permittivity parameter of the locally filling medium of the crack or a certain composition, but the equivalent complex permittivity parameter that can reproduce the scattering response of the two ports of the cracked structure under a specific waveguide test configuration.

[0045] Furthermore, continuing with the previously mentioned sandstone-cement bilayer composite interface example, the measured scattering parameters and the inverted effective complex permittivity parameters obtained from the tests can also be combined with... Figure 3 The diagram shown is an example of the measured scattering parameter test results of this application. Figure 4 The diagram shown is an example of the inversion results of the effective complex permittivity parameters of this application, for a more intuitive understanding.

[0046] Step S104: Calculate the response index characterizing the state of microcracks at the interface using measured scattering parameters and effective complex dielectric parameters. Understandably, the series of response indices calculated here using measured scattering parameters and effective complex permittivity parameters are used to characterize the multi-dimensional state of the interface microcracks.

[0047] Furthermore, this involves the response index system constructed in this application. Specifically, the response indexes involved may include three main aspects: scattering response index, complex permittivity inversion index, and differential characterization index.

[0048] As can be seen, in terms of index construction, this application does not use a single dielectric parameter or a single scattering quantity as the judgment basis, but constructs a multi-index joint characterization system including scattering response index, complex dielectric inversion index and differential judgment index.

[0049] The corresponding ones are: 1) Scattering response indicators include reflectivity transmittance With absorption rate This is used to directly reflect the influence of microcracks at the interface on the reflection, transmission, and absorption behavior of electromagnetic waves, and includes: , , ; It should be noted that the scattering response indicators here include reflectivity. transmittance With absorption rate The configuration allows the influence of interfacial microcracks on electromagnetic wave propagation behavior to be characterized as energy distribution features such as enhanced reflection, attenuation of transmission, and changes in absorption, providing a basis for subsequent parameter inversion and damage assessment. For air-filled, water-filled, and brine-filled conditions, the distribution relationship between reflection, transmission, and absorption typically differs significantly. Air-filled cracks exhibit more scattering modulation, while water- and brine-filled cracks are more likely to show reduced transmission and enhanced absorption.

[0050] 2) Complex permittivity inversion indices include , , and , It is used to transform complex scattering phenomena into energy storage and dissipation characteristics with clear physical meaning; in, , , The effective energy storage characteristics and different effective loss characteristics mentioned above, This is an additional composite indicator.

[0051] 3) Differential characterization indicators include , , , and The corresponding ones are: , , , , , In this context, the subscript 'c' represents the sample to be tested, and the subscript '0' represents the complete interface reference sample.

[0052] It should be noted that the differential characterization index here is the result of the complete interface comparison and differential characterization introduced in this application, which can effectively reduce the influence of systematic errors, clamping errors and sample baseline differences, and make the real response changes caused by microcracks at the interface more prominent.

[0053] Furthermore, in terms of details, to achieve robust characterization at the frequency band level, this application can also construct frequency band statistics for any index within the effective evaluation frequency band, such as the mean-type index and integral-type index shown below: , , in, It is a mean-type indicator. To effectively assess the number of frequency points, It is an integral-type indicator, [ .

[0054] Understandably, the above treatment expands the characterization of the complex dielectric response of the microcracks at the interface from "single frequency point, single parameter" to a comprehensive characterization of "frequency band, multiple parameters, and differential characteristics".

[0055] Step S105: Calculate the geometric damage characterization and filling loss characterization of the interfacial microcracks using response indices. Understandably, this application focuses on the different dominant roles of the geometry of the interfacial microcracks and the filling medium on the response. Based on the series of response indices obtained above, a geometric damage characterization quantity reflecting the structural modulation of the interfacial microcracks and a filling loss characterization quantity reflecting the degree of geometric damage of the interfacial microcracks are constructed.

[0056] Specifically, this application further constructs a feature expression for joint determination, whereby the crack geometry state is related to... The differential component is quite sensitive, and liquid, especially brine filling, affects dielectric loss characteristics. or More sensitive.

[0057] Based on this, the geometric damage characterization quantity can be specifically expressed as: , in, This is a geometric damage characterization quantity. For different non-negative weighting coefficients; The specific characterization of filling loss can be expressed as: , in, As a characterizing quantity of filling loss, For different non-negative weight coefficients, The value can be determined by assignment or normalization based on calibration samples, numerical simulation databases, or engineering experience.

[0058] Thus, the above expression forms a joint judgment framework of dual main indicators and multiple sub-indicators.

[0059] Step S106: Combining geometric damage characterization quantity, filling loss characterization quantity, geometric damage characterization quantity threshold, and filling loss characterization quantity threshold, the damage state of the sample under test is determined, and the loss state determination result corresponding to the microcrack at the interface is obtained.

[0060] In obtaining geometric damage characterization and filling loss characterization quantity Subsequently, to achieve a unified assessment of damage status and to avoid ambiguity in the judgment threshold, this application may further define: This is the threshold for determining geometric damage, used to distinguish between the intact interface state and the geometrically damaged dominant state. This is the filling loss judgment threshold (or filling / loss judgment threshold), used to distinguish between weak loss state and liquid or high loss filling state.

[0061] In practice, the two thresholds mentioned above can be determined by the reference sample set or the calibration sample set, rather than being arbitrarily specified.

[0062] Furthermore, the threshold values ​​for geometric damage characterization and filling loss characterization can be specifically expressed as follows: , , , , in, The threshold for geometric damage characterization. For complete interface reference style The mean, For complete interface reference style standard deviation and Different confidence coefficients can be used (or optimized based on the classification accuracy, misclassification rate, or separation of the calibrated sample set). The number of samples for the complete interface reference style. for Each sample is in the effective evaluation frequency band The geometric damage characterization quantity obtained in the process, The threshold for characterizing filling loss. For complete interface reference style The mean, For complete interface reference style standard deviation for Each sample is in the effective evaluation frequency band The filling loss characterization quantity obtained in the process.

[0063] Understandably, the two thresholds mentioned above... The optimal distribution is determined based on the statistical distribution of the complete interface reference sample set.

[0064] Under the above design, two thresholds It has a clear statistical source and can reflect the normal upper limit of fluctuation of geometric and loss indicators under complete interface conditions.

[0065] Meanwhile, when a calibration sample set of known states is available, the two thresholds It can also be determined by the boundary position between the complete interface sample and the crack sample.

[0066] Preferably, if the mean of the geometric damage characterization quantity corresponding to the known geometric damage calibration sample set is... The mean value of the filling / loss characterization parameters corresponding to the liquid filling calibration sample set is Then it can also be expressed as: , , Of the two threshold determination methods mentioned above, the former is suitable for statistical judgment scenarios based on complete interface reference samples, while the latter is suitable for quantitative identification scenarios where a calibration sample database has been established.

[0067] After obtaining two thresholds Then, further damage assessment can be carried out on test specimens containing interfacial microcracks.

[0068] In this further design, the determination of damage status may specifically include: 1) When and When the test sample is in a complete interface state or a near-complete interface state, it is determined that the test sample is in a complete interface state. 2) When and When the test sample is determined to have interfacial microcracks dominated by geometric damage, it corresponds to an air-filled state or a weakly loss-filled state. 3) When and When the test sample is found to have interfacial microcracks, and the cracks are filled with liquid or significantly depleting medium; 4) When If the liquid filling medium continues to increase further and exceeds the loss level threshold determined based on different salinity calibration samples, it is determined that the crack filling medium of the test sample has evolved from a low-loss liquid to a high-conductivity liquid.

[0069] More specifically, in determining the damage state, this application uses an intact interface sample as a reference to comprehensively compare the multi-index responses of each test sample within the target frequency band. When the test sample exhibits the following characteristics relative to the intact interface... When there is a systematic decrease, but the absorption enhancement is not obvious and the response change is mainly reflected in scattering modulation, it can be determined that the microcracks at the interface are biased towards air-filled or weakly loss-filled states; when the test sample shows a significant decrease in S21 and a significant increase in A, and , or When the concentration increases synchronously, it can be determined that the microcracks at the interface are biased towards a liquid-filled state. If, based on the liquid-filled state, the loss-related indicators further increase continuously with increasing salinity, and the absorption rate increases overall within the frequency band and tends to have a more gradual distribution, then it can be further determined that the crack is in a state of high salinity or strong conductivity loss. For geometric state determination, priority can be given to... The difference components are used for characterization because these indicators are more sensitive to changes in interface structure and geometric damage; for determining the filling state, priority can be given to using... , , And loss-related indicators such as absorption rate, because these indicators are more sensitive to liquid and brine filling. Therefore, it is possible to distinguish between the geometric damage effect of interfacial microcracks and the effect of the filling medium.

[0070] Furthermore, in further extended design schemes, to achieve a unified damage assessment, this application can also construct an overall damage index based on the above. In this regard, the method of this application may further include: Construct the overall damage index, which corresponds to: , , , in, The overall damage index, For different weighting coefficients, , , , As a geometric damage construction index, Two reference values ​​are used to construct an index for filling loss. Determined by a reference sample library, numerical simulation database, or prior calibration results; Based on the range of the overall damage index, the overall damage degree of the interface microcrack damage is matched within the range of overall damage degree including mild, moderate and severe, or the engineering risk level of the interface microcrack damage is matched within the range of different engineering risk levels.

[0071] At this point, it can be understood that, in terms of specific output, this application can output at least one of the following results: 1) Determine whether there are microcracks or damage at the interface; 2) Determine the degree of damage or risk level of microcracks; 3) Identify the geometric state of microcracks, including dip angle, aperture, extension degree, or spatial distribution characteristics; 4) Identify the filling state of microcracks, including air, water, salt water, or different levels of conductivity loss.

[0072] As for specific application scenarios, as an example, this application can be specifically applied to the identification of microcracks and damage assessment of interfaces such as well shaft cement sheath-formation interface, lining-surrounding rock interface, grouting body-bedrock interface, and other layered composite structure interfaces.

[0073] Furthermore, when there are deep sags, strong oscillations (or sharp oscillations) or resonant-like abnormal responses in the test frequency band (or test frequency range), the inversion results may be highly sensitive to small errors, resulting in local spikes or abnormal fluctuations in the effective complex dielectric parameters.

[0074] To address this, this application can first define a set of low-confidence frequency points, mark the corresponding frequency points as low-confidence frequency points, and use the spectral smoothing region as the main evaluation interval, that is, the effective evaluation frequency band after removing low-confidence frequency points. As the , , and The computational basis can be used to reduce the amplified impact of pathological frequencies on damage assessment results, or quantitative assessment results in the high-confidence frequency band and abnormal response results in the low-confidence frequency band can be output separately to balance damage sensitivity and assessment robustness.

[0075] Existing experiments and analyses have shown that in the narrow band region around 7 GHz, deep sag and strong interference effects can easily cause inversion pathology. Therefore, marking, eliminating, or interpreting such frequency bands separately can help to further improve the reliability of the quantitative identification results of this application.

[0076] In conclusion, regarding the above solutions, under the objective of assessing interfacial microcracks, this application establishes a damage assessment framework based on the mapping relationship between electromagnetic scattering response and effective complex dielectric response caused by interfacial microcracks, the equivalent inversion process, and the damage assessment process based on multi-index joint judgment. This framework enables quantitative or semi-quantitative assessment of the geometric state, filling state, and damage degree of interfacial microcracks. It solves the problem that existing technologies mainly focus on the overall dielectric measurement of homogeneous materials or conventional multiphase media, and are difficult to stably characterize, invert parameters, and assess the damage of millimeter-scale and smaller defects such as interfacial microcracks. It has good identification ability, state interpretation ability, and engineering applicability for interfacial micro-damage and can provide good data support for underground engineering.

[0077] In terms of details, the above-mentioned solution in this application has the following beneficial effects: 1) A small-scale damage assessment method for interfacial microcracks is proposed. This application is not for the overall dielectric measurement of homogeneous materials or conventional multiphase media, but for millimeter-scale and smaller microcracks formed by interfacial peeling, debonding or local damage. It establishes a dedicated technical solution for the identification and assessment of interfacial micro-damage, which can more effectively serve the non-destructive testing needs of composite interfaces in underground engineering.

[0078] 2) A complete technical chain of "scattering parameter testing - effective complex permittivity parameter inversion - damage state determination" has been established. This application obtains scattering parameters through the waveguide method, equating the heterogeneous structure containing interfacial microcracks to a homogeneous dielectric segment, inverting to obtain the effective complex permittivity parameters, and further using them for damage state assessment. This method transforms the complex scattering response into complex permittivity response parameters with clear physical meaning, improving the physical interpretability and assessment reliability of interfacial microcrack damage identification.

[0079] 3) A multi-index joint judgment mechanism for complex dielectric response based on complete interface comparison was constructed. This application uses the complete interface as a reference baseline and conducts comprehensive analysis by combining scattering response index, complex dielectric inversion index and differential judgment index. This can more effectively distinguish the geometric damage effect and filling medium effect of microcracks at the interface, and improve the identification ability and assessment accuracy of different damage states, different filling states and different risk levels.

[0080] The above is an introduction to the interface microcrack damage assessment method based on complex dielectric response provided in this application. To facilitate better implementation of the interface microcrack damage assessment method based on complex dielectric response provided in this application, this application also provides an interface microcrack damage assessment device based on complex dielectric response from the perspective of functional modules.

[0081] See Figure 5 , Figure 5 This is a schematic diagram of a structure of the interface microcrack damage assessment device based on complex dielectric response according to this application. In this application, the interface microcrack damage assessment device 500 based on complex dielectric response may specifically include the following structure: Unit 501 is selected for selecting layered or composite structures with interfaces as test objects for the target underground project. The test objects include complete interface reference samples and test samples with microcracks at the interfaces. Test unit 502 is used to test the test object by the band test device in the main mode TE10 mode to obtain the measured scattering parameters; Inversion unit 503 is used to invert the effective complex dielectric parameters of the interface microcracks on a frequency-by-frequency basis, based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks, and the inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters. The calculation unit 504 is used to calculate the response index characterizing the state of microcracks at the interface using measured scattering parameters and effective complex dielectric parameters. The calculation unit 504 is also used to calculate the geometric damage characterization and filling loss characterization of the microcracks at the interface through response indices. The determination unit 505 is used to combine geometric damage characterization quantity, filling loss characterization quantity, geometric damage characterization quantity threshold and filling loss characterization quantity threshold to determine the damage state of the sample under test and obtain the loss state determination result corresponding to the microcrack at the interface.

[0082] In one exemplary embodiment, the test unit 502 is specifically used for: The test object is placed in the rectangular waveguide test section of the band test device. Excitation and reception are performed using the dominant mode TE10 within the preset frequency band. Complex scattering parameters at each frequency point are obtained, and the corresponding scattering relationships are expressed as follows: , in, The normalized complex amplitude of the output from port 1 of the band test device. The normalized complex amplitude emitted from port 2 of the band test device. The incident normalized complex amplitude at port 1 of the band test device. The incident normalized complex amplitude at port 2 of the band test device. These are the measured scattering parameters. The reflection coefficient is for the complete interface reference style. The transmission coefficient is for a complete interface reference pattern. Let be the reflection coefficient of the sample to be tested. Let be the transmission coefficient of the sample to be tested. Under single-ended excitation conditions, let ,have: , .

[0083] In yet another exemplary embodiment, the equivalent inversion model for interface microcracks has the following configuration: The heterogeneous interface structure containing interfacial microcracks is equivalent to a homogeneous equivalent dielectric segment of the same length d as the original test segment in the electromagnetic propagation direction, and the effective complex relative permittivity of the homogeneous equivalent dielectric segment is defined as: , in, For the effective complex relative permittivity, For effective energy storage characteristics, and For different effective loss characteristics, Angular frequency, , For frequency, The dielectric constant of air is , The imaginary unit in complex numbers. In the TE10 master mode, let the waveguide width dimension be... Then the cutoff wavenumber Complex wavenumber in the corresponding homogeneous equivalent medium segment With complex propagation constant for: , , , in, The attenuation constant is The phase constant, The permeability of free space, The equivalent impedance corresponding to the TE mode is expressed as: , Transmission matrix of uniform equivalent medium segment for: , At the port reference impedance is Under the given conditions, the two models predict the scattering parameters. for: , , in, For different coefficients to be measured; Inversion objective function for: , in, These are different weighting coefficients.

[0084] In yet another exemplary embodiment, the response index includes a scattering response index, a complex permittivity inversion index, and a differential characterization index. Scattering response metrics include reflectivity transmittance With absorption rate The corresponding ones are: , , ; Complex permittivity inversion indices include , , and , ; Differential characterization metrics include , , , and The corresponding ones are: , , , , , In this context, the subscript 'c' represents the sample to be tested, and the subscript '0' represents the complete interface reference sample.

[0085] In yet another exemplary embodiment, the geometric damage characterization quantity is expressed as: , in, This is a geometric damage characterization quantity. For different non-negative weighting coefficients; The filling loss characterization quantity is expressed as: , in, As a characterizing quantity of filling loss, For different non-negative weighting coefficients.

[0086] In yet another exemplary embodiment, the geometric damage characterization threshold and the filling loss characterization threshold are expressed as follows: , , , , in, The threshold for geometric damage characterization. For complete interface reference style The mean, For complete interface reference style standard deviation and For different confidence coefficients, The number of samples for the complete interface reference style. for Each sample is in the effective evaluation frequency band The geometric damage characterization quantity obtained in the process, The threshold for characterizing filling loss. For complete interface reference style The mean, For complete interface reference style standard deviation for Each sample is in the effective evaluation frequency band The filling loss characterization quantity obtained in the process; The criteria for determining the damage status include: when and When the test sample is in a complete interface state or a near-complete interface state, it is determined that the test sample is in a complete interface state. when and When the test sample is determined to have interfacial microcracks dominated by geometric damage, it corresponds to an air-filled state or a weakly loss-filled state. when and When the test sample is found to have interfacial microcracks, and the cracks are filled with liquid or significantly depleting medium; when If the liquid filling medium continues to increase further and exceeds the loss level threshold determined based on different salinity calibration samples, it is determined that the crack filling medium of the test sample has evolved from a low-loss liquid to a high-conductivity liquid.

[0087] In yet another exemplary embodiment, the apparatus further includes: Construction unit 506 is used to construct the overall damage index, and the corresponding components are: , , , in, The overall damage index, For different weighting coefficients, , , , As a geometric damage construction index, Two reference values ​​are used to construct an index for filling loss. Determined by a reference sample library, numerical simulation database, or prior calibration results; The matching unit 507 is used to match the overall damage degree of the interface microcrack damage within the range of overall damage degree, including mild, moderate and severe, according to the range of the overall damage index, or to match the interface microcrack damage within the range of different engineering risk levels.

[0088] This application also provides a processing device from a hardware architecture perspective. As mentioned earlier, in practice, a processing device may exist as a device cluster. In this case, each device in the device cluster can also be referred to as a processing device. See [reference needed]. Figure 6 , Figure 6 This diagram illustrates a structural schematic of the processing device of this application. Specifically, the processing device may include a processor 601, a memory 602, and an input / output device 603. The processor 601 executes the computer program stored in the memory 602 to implement, for example... Figure 1 The corresponding embodiments of the interface microcrack damage assessment method based on complex dielectric response in the embodiments; or, when the processor 601 executes the computer program stored in the memory 602, it implements as follows: Figure 5 Corresponding to the functions of each unit in the embodiment, the memory 602 is used to store the functions executed by the processor 601 as described above. Figure 1 The computer program required for the interface microcrack damage assessment method based on complex dielectric response in the corresponding embodiment.

[0089] For example, a computer program may be divided into one or more modules / units, one or more of which are stored in memory 602 and executed by processor 601 to complete this application. One or more modules / units may be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of the computer program in a computer device.

[0090] The processing device may include, but is not limited to, processor 601, memory 602, and input / output device 603. Those skilled in the art will understand that the illustrations are merely examples of the processing device and do not constitute a limitation on the processing device. It may include more or fewer components than illustrated, or combine certain components, or different components. For example, the processing device may also include network access devices, buses, etc., and processor 601, memory 602, input / output device 603, etc., are connected via a bus.

[0091] Processor 601 can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor. The processor is the control center of the processing device, connecting various parts of the device through various interfaces and lines.

[0092] The memory 602 can be used to store computer programs and / or modules. The processor 601 implements various functions of the computer device by running or executing the computer programs and / or modules stored in the memory 602 and by calling data stored in the memory 602. The memory 602 may mainly include a program storage area and a data storage area. The program storage area may store the operating system, at least one application program required for a function, etc.; the data storage area may store data created according to the use of the processing device, etc. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as hard disk, RAM, plug-in hard disk, smart media card (SMC), secure digital card (SD), flash card, at least one disk storage device, flash memory device, or other volatile solid-state storage device.

[0093] When processor 601 executes a computer program stored in memory 602, it can specifically perform the following functions: For the target underground project, layered or composite structures with interfaces are selected as test objects. The test objects include complete interface reference samples and test samples with microcracks at the interfaces. The test object was tested by the band test device in the main mode TE10 mode to obtain the measured scattering parameters. Based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks, and with an inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters, the effective complex dielectric parameters of the interface microcracks are inverted point by point at each frequency. The response index characterizing the state of microcracks at the interface was calculated using measured scattering parameters and effective complex dielectric parameters. The geometric damage characterization and filling loss characterization of the microcracks at the interface are calculated using response indices. By combining geometric damage characterization quantity, filling loss characterization quantity, geometric damage characterization quantity threshold, and filling loss characterization quantity threshold, the damage state of the sample under test is determined, and the loss state determination result corresponding to the microcracks at the interface is obtained.

[0094] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the interface microcrack damage assessment device, processing equipment, and its corresponding units based on complex dielectric response described above can be found in the following reference: Figure 1 The description of the interface microcrack damage assessment method based on complex dielectric response in the corresponding embodiments will not be repeated here.

[0095] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be performed by instructions, or by instructions controlling related hardware. These instructions can be stored in a computer-readable storage medium and loaded and executed by a processor.

[0096] Therefore, this application provides a computer-readable storage medium storing a plurality of instructions that can be loaded by a processor to execute the present application. Figure 1 The steps of the interface microcrack damage assessment method based on complex dielectric response in the corresponding embodiment can be referred to as follows for specific operations. Figure 1 The description of the interface microcrack damage assessment method based on complex dielectric response in the corresponding embodiments will not be repeated here.

[0097] The computer-readable storage medium may include: read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0098] Because of the instructions stored in the computer-readable storage medium, the present application can be executed as described above. Figure 1 The steps of the interface microcrack damage assessment method based on complex dielectric response in the corresponding embodiment can therefore achieve the results of this application. Figure 1 The beneficial effects that the interface microcrack damage assessment method based on complex dielectric response can achieve in the corresponding embodiments are detailed in the preceding description and will not be repeated here.

[0099] The foregoing has provided a detailed description of the interface microcrack damage assessment method, apparatus, processing equipment, and computer-readable storage medium based on complex dielectric response provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the core ideas of this application; furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for assessing interfacial microcrack damage based on complex dielectric response, characterized in that, The method includes: For the target underground project, a layered or composite structure containing interfaces is selected as the test object, wherein the test object includes a complete interface reference sample and a test sample containing microcracks at the interface; The test object was tested by a band test device in the main mode TE10 mode to obtain the measured scattering parameters. Based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcrack, and with an inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters, the effective complex dielectric parameters of the interface microcrack are inverted point by point at each frequency. The response index characterizing the state of the microcracks at the interface is calculated using the measured scattering parameters and the effective complex dielectric parameters. The geometric damage characterization and filling loss characterization of the microcracks at the interface are calculated using the response index. By combining the geometric damage characterization quantity, the filling loss characterization quantity, the geometric damage characterization quantity threshold, and the filling loss characterization quantity threshold, the damage state of the sample under test is determined, and the loss state determination result corresponding to the microcrack at the interface is obtained.

2. The method according to claim 1, characterized in that, The step of testing the test object using a band testing device in the primary mode TE10 mode to obtain measured scattering parameters includes: The test object is placed in the rectangular waveguide test section of the band test device, and excited and received using the main mode TE10 method within the preset frequency band. The complex scattering parameters at each frequency point are obtained, and the corresponding scattering relationship is expressed as follows: ， in, The normalized complex amplitude of the output from port 1 of the band test device. The normalized complex amplitude of the output from port 2 of the band test device. The incident normalized complex amplitude at port 1 of the band testing device. The incident normalized complex amplitude at port 2 of the band test device. The measured scattering parameters are... The reflection coefficient of the complete interface reference pattern. The transmittance coefficient of the complete interface reference pattern. Let be the reflection coefficient of the sample to be tested. Let be the transmission coefficient of the sample to be tested. Under single-ended excitation conditions, let ,have: ， 。 3. The method according to claim 2, characterized in that, The equivalent inversion model for the microcracks at the interface has the following configuration: The heterogeneous interface structure containing the microcracks at the interface is equivalent to a homogeneous equivalent dielectric segment with the same length d as the original test segment in the electromagnetic propagation direction, and the effective complex relative permittivity of the homogeneous equivalent dielectric segment is defined as: ， in, The effective complex relative permittivity, For effective energy storage characteristics, and For different effective loss characteristics, Angular frequency, , For frequency, The dielectric constant of air is , The imaginary unit in complex numbers. In the master mode TE10 mode, the waveguide width dimension is set to... Then the cutoff wavenumber The complex wavenumber corresponding to the homogeneous equivalent medium segment With complex propagation constant for: ， ， ， in, The attenuation constant is The phase constant, The permeability of free space, The equivalent impedance corresponding to the TE mode is expressed as: ， The transmission matrix of the uniform equivalent medium segment for: ， At the port reference impedance is Under the given conditions, the two models predict the scattering parameters. for: ， ， in, For different coefficients to be measured; Inversion objective function for: ， in, These are different weighting coefficients.

4. The method according to claim 3, characterized in that, The response index includes scattering response index, complex permittivity inversion index, and differential characterization index; The scattering response index includes reflectivity. transmittance With absorption rate The corresponding ones are: ， ， ； The complex dielectric inversion index includes , , and , ; The difference characterization index includes , , , and The corresponding ones are: ， ， ， ， ， In this context, the subscript 'c' represents the test sample, and the subscript '0' represents the complete interface reference sample.

5. The method according to claim 4, characterized in that, The geometric damage characterization quantity is expressed as: ， in, The geometric damage characterization quantity is... For different non-negative weighting coefficients; The filling loss characterization quantity is expressed as: ， in, This is the quantity characterizing the filling loss. For different non-negative weighting coefficients.

6. The method according to claim 5, characterized in that, The threshold values ​​for geometric damage characterization and filling loss characterization are expressed as follows: ， ， ， ， in, The threshold value for the geometric damage characterization quantity is... Corresponding to the complete interface reference style The mean, Corresponding to the complete interface reference style standard deviation and For different confidence coefficients, This refers to the number of samples of the complete interface reference style. for Each sample is in the effective evaluation frequency band The geometric damage characterization quantity obtained in the process, The threshold value for the filling loss characterization quantity. Corresponding to the complete interface reference style The mean, Corresponding to the complete interface reference style standard deviation for The samples are in the effective evaluation frequency band The filling loss characterization quantity obtained in the process; The determination of the damage status includes: when and When the test sample is in a complete interface state or a near-complete interface state, it is determined that the test sample is in a complete interface state or a near-complete interface state. when and When the test sample is determined to have interfacial microcracks dominated by geometric damage, it corresponds to an air-filled state or a weakly loss-filled state. when and When the test sample is found to have interfacial microcracks, and the cracks are filled with liquid or significantly degradable medium; when If the liquid filling level continues to increase further and exceeds the loss level threshold determined based on different salinity calibration samples, it is determined that the crack filling medium of the test sample has evolved from a low-loss liquid to a high-conductivity liquid.

7. The method according to claim 6, characterized in that, The method further includes: Construct the overall damage index, which corresponds to: ， ， ， in, The overall damage index, For different weighting coefficients, , , , As a geometric damage construction index, Two reference values ​​are used to construct an index for filling loss. Determined by a reference sample library, numerical simulation database, or prior calibration results; Based on the range of the overall damage index, the overall damage degree of the interface microcrack damage is matched within the range of overall damage degree including mild, moderate and severe, or the engineering risk level of the interface microcrack damage is matched within different engineering risk level ranges.

8. A device for assessing interfacial microcrack damage based on complex dielectric response, characterized in that, The device includes: The selection unit is used to select a layered or composite structure containing interfaces as a test object for a target underground project. The test object includes a complete interface reference sample and a test sample containing microcracks at the interface. The test unit is used to test the test object by the band test device in the main mode TE10 mode to obtain the measured scattering parameters; The inversion unit is used to invert the effective complex dielectric parameters of the interface microcracks on a frequency-by-frequency basis, based on the measured scattering parameters, combined with the constructed equivalent inversion model of the interface microcracks, and an inversion objective function that aims to minimize the complex mismatch between the model-predicted scattering parameters and the measured scattering parameters. The calculation unit is used to calculate the response index characterizing the state of the microcracks at the interface using the measured scattering parameters and the effective complex dielectric parameters. The calculation unit is also used to calculate the geometric damage characterization and filling loss characterization of the interface microcracks through the response index. The determination unit is used to combine the geometric damage characterization quantity, the filling loss characterization quantity, the geometric damage characterization quantity threshold, and the filling loss characterization quantity threshold to determine the damage state of the sample to be tested, and obtain the loss state determination result corresponding to the microcrack at the interface.

9. A processing device, characterized in that, The method includes a processor and a memory, wherein the memory stores a computer program, and the processor executes the method as described in any one of claims 1 to 7 when it invokes the computer program in the memory.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a plurality of instructions adapted for loading by a processor to perform the method of any one of claims 1 to 7.

Images