A high-performance photoelectric conversion bio-optical chip, a preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LIANGZHUN WUHAN LIFE SCI CO LTD
- Filing Date
- 2026-04-08
- Publication Date
- 2026-08-07
AI Technical Summary
[0008]本发明的目的在于提供一种高性能光电转换生物光学芯片及其制备方法与应用,用于解决现有技术中CdS基芯片存在层间结合力弱、结构稳定性差、光电性能固定且不可调的问题
1、本发明涉及的一种高性能光电转换生物光学芯片创新的采用 “钛连接层 + 双层金属层 + 光电转化材料功能层” 的多层异质结构,通过金属层与光电转化材料功能层的界面作用形成高效肖特基势垒,同时利用金属层的表面等离激元共振(SPR)效应激发高能热电子,通过新增钛连接层和双层金属层的协同设计,从结构层面优化层间作用。
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Abstract
Description
Technical Field
[0001] This invention relates to the field of optoelectronic functional materials and sensor technology, specifically to a high-performance photoelectric conversion bio-optical chip, its fabrication method, and its application. Background Technology
[0002] Cadmium sulfide (CdS), as an important group II-VI semiconductor material, has shown broad application potential in photocatalysis, solar cells, and photoelectrochemical sensors due to its excellent light absorption characteristics in the visible light range, suitable band structure, and good photoelectrochemical performance. However, the inherent defects of CdS itself severely restrict its practical applications. To address this, various strategies have been developed to optimize the photoelectric properties of CdS, including precise control of its morphology and crystal structure, construction of heterostructures with metals or other semiconductors, and doping with heteroatoms to control the electronic structure. Among these, constructing heterostructures has been proven to be an effective way to enhance photoactivity, as it can regulate charge separation and transport processes through interfacial interactions.
[0003] Currently, most common CdS-based optoelectronic chips adopt a simple three-layer configuration: substrate-metal layer-CdS functional layer-metal layer. The metal layer material is typically a single metal such as gold (Au) or aluminum (Al), and the thickness of the CdS layer is often fixed at specific dimensions such as 30nm or 50nm. These structures are mainly fabricated using magnetron sputtering and conventional vacuum evaporation methods. Their core working principle is based on the generation of electron-hole pairs in CdS under photoexcitation, which are then efficiently collected by the two metal layers, thereby completing the photoelectric conversion process.
[0004] Under visible light irradiation, valence band (VB) electrons in CdS are excited to transition to the conduction band (CB), forming photogenerated electron-hole pairs. Conduction band electrons then transfer to the surface of the FTO metal layer, generating a detectable photoelectric signal. Simultaneously, the metal nanostructures loaded on the CdS surface are excited to generate high-energy hot electrons under visible light irradiation due to surface plasmon resonance (SPR). These hot electrons possess energies higher than the conduction band bottom of CdS, enabling them to efficiently transfer across the Schottky junction formed at the CdS-metal interface to the CdS conduction band. These hot electrons then transfer together with the CdS's own photogenerated electrons to the FTO metal layer surface, providing an additional contribution to the photocurrent of the composite material. The key to this process lies in the Schottky barrier formed between CdS and the metal: this barrier causes the energy band of CdS to bend upward, forming a unidirectional charge transport channel. This effectively prevents photogenerated electrons in the CdS conduction band from transferring back to the metal, thus avoiding carrier recombination, and also promotes the directional injection of hot electrons generated on the metal surface into the CdS conduction band, thereby achieving efficient separation of hot electrons and holes and significantly improving carrier utilization and overall photoelectric conversion performance.
[0005] However, this traditional structure has the following obvious drawbacks: 1. Weak interfacial adhesion: The substrate is simply cleaned without activation, and there is no transition structure between the metal layer and the CdS layer, resulting in insufficient adhesion between the layers. Under complex environments, the metal layer is prone to peeling off, resulting in a short lifespan.
[0006] 2. Limited and unadjustable photoelectric performance: A fixed CdS layer thickness makes it difficult to balance light absorption and carrier transport. If it is too thin, the light absorption is insufficient and the signal is weak; if it is too thick, the probability of recombination of photogenerated carriers increases and the efficiency decreases, making it difficult to adapt to high-precision detection scenarios.
[0007] Therefore, developing a high-performance photoelectric conversion bio-optical chip with stable structure, optimized interface, tunable photoelectric performance, and efficient synergistic utilization of the SPR effect is of great significance for promoting the development of high-performance photoelectric biochemical sensors. Summary of the Invention
[0008] The purpose of this invention is to provide a high-performance photoelectric conversion bio-optical chip, its preparation method and application, to solve the problems of weak interlayer bonding, poor structural stability and fixed and unadjustable photoelectric properties in existing CdS-based chips.
[0009] To achieve the above objectives, the present invention provides the following technical solution: a high-performance photoelectric conversion bio-optical chip, wherein the chip comprises, from bottom to top: Polymer substrate; Titanium bonding layer; First metal layer; Functional layers of photoelectric conversion materials and The second metal layer.
[0010] The photoelectric conversion material functional layer was chosen because it possesses a high refractive index and low extinction coefficient in the visible light range, while the metal layer provides strong electromagnetic field confinement at the nanoscale. Titanium is used as a transition layer, leveraging its excellent wettability with the polymer substrate, the two metal layers, and the photoelectric conversion material functional layer to fill the gap between the traditional single metal layer and the photoelectric conversion material functional layer, reducing contact resistance. Simultaneously, the titanium connecting layer enhances interlayer chemical bonding, improving the adhesion of the overall chip structure, preventing metal layer peeling under complex environments, and extending chip lifespan.
[0011] Preferably, the polymer substrate is a polyethylene terephthalate (PET) substrate.
[0012] Preferably, the photoelectric conversion material functional layer is a semiconductor thin film deposited on the first metal layer.
[0013] Preferably, based on the goal of optimizing photoelectric performance, the optimal combination of thickness parameters for each functional layer is determined: the thickness of the titanium connecting layer is 5–50 nm, the thickness of the photoelectric conversion material functional layer is 20–100 nm, and the thicknesses of the first and second metal layers are both 10–100 nm. This thickness combination ensures that the photoelectric conversion material functional layer can fully capture visible light and generate sufficient photogenerated electron-hole pairs, while also enhancing the surface plasmon resonance (SPR) effect through metal layer thickness control, thus achieving performance adaptation under different detection scenarios.
[0014] Preferably, the thickness of the titanium connecting layer is 9 nm, the thickness of the photoelectric conversion material functional layer is 25 nm, the thickness of the first metal layer is 15 nm, and the thickness of the second metal layer is 20 nm.
[0015] Preferably, the thickness of the titanium connecting layer is 9 nm, the thickness of the photoelectric conversion material functional layer is 25 nm, the thickness of the first metal layer is 15 nm, and the thickness of the second metal layer is 40 nm.
[0016] Preferably, the surface of the polymer substrate is a nanocup array with periodic nanopatterns.
[0017] A high-performance photoelectric conversion bio-optical chip and its fabrication method include the following steps: S1. Prepare a mold with periodic nanopatterns on its surface and perform hydrophobic treatment on the mold; S2. Apply UV-curable adhesive to the surface of the mold, cover with a polymer film, cure with ultraviolet light, and then peel the polymer substrate with nanocup array structure formed after curing from the mold. S3. Using ion beam vacuum evaporation deposition technology, a titanium connecting layer, a first metal layer, a photoelectric conversion material functional layer, and a second metal layer are sequentially deposited on the surface of the nanocup array structure on the polymer substrate to obtain the MetaSPR sensor chip with nanocup array structure.
[0018] Preferably, in step S1, the mold with a nano-conical pattern is prepared on a quartz substrate using laser interference lithography; wherein, the original surface of the quartz substrate has a periodic array of conical nanopillars.
[0019] Preferably, in step S3, during the preparation of the photoelectric conversion material functional layer, the solid semiconductor material is converted into a gaseous state by vacuum evaporation with an ion beam, and the gaseous particles nucleate, grow, and merge on the surface of the polymer substrate to form a continuous thin film.
[0020] Application of a high-performance photoelectric conversion bio-optical chip in biomolecular detection: using the photoelectrochemical properties of the chip to detect the concentration of target molecules in solution or to analyze intermolecular affinity.
[0021] Compared with the prior art, the beneficial effects of the present invention are: 1. The present invention relates to a high-performance photoelectric conversion bio-optical chip that innovatively adopts a multilayer heterostructure of "titanium connecting layer + double metal layer + photoelectric conversion material functional layer". The efficient Schottky barrier is formed through the interface interaction between the metal layer and the photoelectric conversion material functional layer. At the same time, the surface plasmon resonance (SPR) effect of the metal layer is used to excite high-energy hot electrons. Through the synergistic design of the newly added titanium connecting layer and double metal layer, the interlayer interaction is optimized from the structural level.
[0022] 2. The high-performance photoelectric conversion bio-optical chip of the present invention adopts a "titanium interconnect layer" design. Through its excellent interface wettability and possible chemical bonding, it transforms the traditional "weak bonding" physical stacking into a "strong bonding" heterogeneous structure, which greatly enhances the adhesion between the layers of the chip, effectively solves the problem of metal layer peeling, and extends the service life of the device.
[0023] 3. The present invention relates to a high-performance photoelectric conversion bio-optical chip and its fabrication method, which breaks through the limitation of fixed thickness of the functional layer of photoelectric conversion material in the prior art. The exciton resonance and plasmon resonance of the photoelectric conversion material are coupled to enhance the monitoring sensitivity. Through process optimization, the thickness of the functional layer and metal layer of photoelectric conversion material can be precisely controlled to adapt to the requirements of different detection scenarios for light absorption efficiency and carrier transport rate. Attached Figure Description
[0024] Figure 1 This is a schematic diagram of the structure of a high-performance photoelectric conversion bio-optical chip according to the present invention.
[0025] Figure 2 This is a sensor response characteristic diagram of the first chip in Embodiment 3 of the present invention used in sucrose aqueous solutions of different concentrations.
[0026] Figure 3 This is a sensor response characteristic diagram of the second type of chip in Embodiment 3 of the present invention used for sucrose aqueous solutions of different concentrations.
[0027] Figure 4 This is a sensor response characteristic diagram of the first chip in Embodiment 4 of the present invention used in sucrose aqueous solutions of different concentrations.
[0028] Figure 5 This is a sensor response characteristic diagram of the second type of chip used in sucrose aqueous solution of different concentrations in Embodiment 4 of the present invention.
[0029] Figure 6 This is a dose-response curve of the first chip used in Embodiment 5 of the present invention for detecting the affinity of different concentrations of IgG with ProteinA.
[0030] Figure 7 This is a dose-response curve of the second chip used in Embodiment 5 of the present invention for detecting the affinity of different concentrations of IgG with ProteinA.
[0031] Figure 8 This is a response characteristic diagram of the first chip used in Embodiment 6 of the present invention for detecting the affinity of different concentrations of IgG with Protein A.
[0032] Figure 9 This is a response characteristic diagram of the second type of chip used in Embodiment 6 of the present invention for detecting the affinity of different concentrations of IgG with ProteinA.
[0033] Figure 10 The MetaSPR sensor chip, as selected in Embodiment 7 of the present invention, is used for Protein A detection of different concentrations of IgG sensor response characteristics. Detailed Implementation
[0034] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0035] Example 1: A method for fabricating a high-performance photoelectric conversion bio-optical chip, comprising the following steps: S1. A mold with a nanoconical pattern is fabricated on a quartz substrate using laser interference lithography. The original quartz substrate surface has a periodic array of conical nanopillars.
[0036] S2. Use silane to hydrophobize the mold surface.
[0037] S3. Spin-coat the UV-curable adhesive evenly onto the template surface and attach a layer of PET film. Then, cure by irradiation with a UV light source (intensity approximately 105 mW / cm²) for 45 seconds. After curing, carefully peel the PET substrate with the inverted nanocup array structure from the template. The PET substrate surface forms a regularly arranged array of nanocups, providing a template for subsequent metal deposition to form specific plasmonic nanostructures.
[0038] S4. The MetaSPR nanocup array sensor chip was prepared by depositing heavy metals with plasmon resonance effect on a polymer nanocup array using an electron beam evaporator. The nanocup array was then cut into 13cm×8.5cm segments and fixed on a 96-well plate with an opening at the bottom to assemble a 96-well chip sensor configuration.
[0039] Example 2: As Figure 1 As shown, a high-performance photoelectric conversion bio-optical chip comprises, from bottom to top: Polymer substrate; Titanium bonding layer; First metal layer; Functional layers of photoelectric conversion materials and The second metal layer.
[0040] The polymer substrate has a PET substrate with a periodic nanocup array on its surface. The titanium connecting layer has a thickness of 5–50 nm, the photoelectric conversion material functional layer has a thickness of 20–100 nm, and the first and second metal layers each have a thickness of 10–100 nm.
[0041] Example 3: A high-performance photoelectric conversion bio-optical chip for the detection of sucrose aqueous solutions of different concentrations. Two types of chips are used. The first type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first gold metal layer with a thickness of 15nm, and a second gold metal layer with a thickness of 20nm. The second type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first gold metal layer with a thickness of 15nm, and a second gold metal layer with a thickness of 40nm.
[0042] Ultrapure water and sucrose aqueous solutions of different concentrations (concentration gradient: 50%, 40%, 30%, 20%, 10%, 5%, 2.5%, 1.25%, 0.625%, 0.3125%, 0.156%, 0%) were added to the detection area of the chip. The photocurrent or reflectance spectrum response values of the chip were measured under visible light irradiation at a fixed wavelength.
[0043] Experimental results are as follows Figure 2 and Figure 3 As shown.
[0044] The results showed that both chips responded to different concentrations of sucrose solution, and the response values exhibited a good gradient with concentration. In particular, the response signal intensity of the second chip (with a second gold metal layer thickness of 40 nm) was significantly higher than that of the first chip (with a second gold metal layer thickness of 20 nm), indicating that the thicker second gold metal layer nanostructure generated a stronger SPR effect, thus resulting in higher detection sensitivity.
[0045] Example 4: A high-performance photoelectric conversion bio-optical chip for the detection of sucrose aqueous solutions of different concentrations. Two types of chips are used. The first type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first silver metal layer with a thickness of 15nm, and a second silver metal layer with a thickness of 40nm. The second type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first platinum metal layer with a thickness of 15nm, and a second platinum metal layer with a thickness of 40nm.
[0046] Ultrapure water and sucrose aqueous solutions of different concentrations (concentration gradient: 50%, 40%, 30%, 20%, 10%, 5%, 2.5%, 1.25%, 0.625%, 0.3125%, 0.156%, 0%) were added to the detection area of the chip. The photocurrent or reflectance spectrum response values of the chip were measured under visible light irradiation at a fixed wavelength.
[0047] Experimental results are as follows Figure 5 As shown: The results showed that both chips responded to different concentrations of sucrose solution, and the response values exhibited a good gradient with concentration. In particular, the response signal intensity was significantly higher when silver was used as the metal layer than when platinum was used as the metal layer, indicating that the silver metal layer nanostructure generated a stronger SPR effect, thereby improving the detection sensitivity.
[0048] Combination Figure 3 , Figure 4 , Figure 5 The results show that, under the same parameters, when gold, silver, and platinum are selected as the metal layers of a high-performance photoelectric conversion bio-optical chip, the response values from high to low are: gold > silver > platinum.
[0049] Example 5: A high-performance photoelectric conversion bio-optical chip for detecting the affinity of different concentrations of IgG with Protein A Two types of chips are used. The first type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first gold metal layer with a thickness of 15nm, and a second gold metal layer with a thickness of 20nm. The second type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first gold metal layer with a thickness of 15nm, and a second gold metal layer with a thickness of 40nm.
[0050] Chip modification: Dilute Protein A to 10 μg / mL with phosphate-buffered saline (PBS) at pH 7.4, add 50 μL to each well of the chip, and incubate at 4°C for 14–16 h to immobilize Protein A on the chip surface. Then rinse with buffer to remove unbound Protein A.
[0051] Affinity assay: Different concentrations of IgG solutions (20 μg / mL, 10 μg / mL, 5 μg / mL, 2.5 μg / mL, 1.25 μg / mL, 0.625 μg / mL, 0.3125 μg / mL, 0.156 μg / mL, 0.078 μg / mL, 0 μg / mL) were prepared using PBS.
[0052] Different concentrations of IgG solutions were sequentially added to the wells of a chip modified with Protein A. After a period of reaction, the changes in the photoelectric response signal of the chip were detected to characterize the binding of Protein A and IgG.
[0053] Experimental results are as follows Figure 6 , Figure 7 As shown: Both chips responded to different concentrations of IgG, and the response values exhibited a good gradient with concentration. Figure 7 As shown, the second type of chip exhibits a clear concentration-dependent response, capable of detecting IgG concentrations as low as 0.078 μg / mL, and can be used to fit binding kinetic parameters.
[0054] The experimental results above show that the thicker the second gold metal layer, the better the photoelectrochemical performance of the chip. This is mainly due to the AuNPs loaded on its surface, which improves the conductivity of the semiconductor material.
[0055] Example 6: A high-performance photoelectric conversion bio-optical chip for detecting the affinity of different concentrations of IgG with Protein A Two types of chips are used. The first type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first silver metal layer with a thickness of 15nm, and a second silver metal layer with a thickness of 40nm. The second type has a titanium interconnect layer with a thickness of 9nm, a photoelectric conversion material functional layer with a thickness of 25nm, a first platinum metal layer with a thickness of 15nm, and a second platinum metal layer with a thickness of 40nm.
[0056] Chip modification: Dilute Protein A to 10 μg / mL with phosphate-buffered saline (PBS) at pH 7.4, add 50 μL to each well of the chip, and incubate at 4°C for 14–16 h to immobilize Protein A on the chip surface. Then rinse with buffer to remove unbound Protein A.
[0057] Affinity assay: Different concentrations of IgG solutions (20 μg / mL, 10 μg / mL, 5 μg / mL, 2.5 μg / mL, 1.25 μg / mL, 0.625 μg / mL, 0.3125 μg / mL, 0.156 μg / mL, 0.078 μg / mL, 0 μg / mL) were prepared using PBS.
[0058] Different concentrations of IgG solutions were sequentially added to the wells of a chip modified with Protein A. After a period of reaction, the changes in the photoelectric response signal of the chip were detected to characterize the binding of Protein A and IgG.
[0059] Experimental results are as follows Figure 8 , Figure 9 As shown: Both chips responded to different concentrations of IgG, and the response values exhibited a good gradient with concentration. Figure 8 The first chip shown exhibits a higher response value, capable of detecting IgG concentrations as low as 0.078 μg / mL, demonstrating superior photoelectrochemical performance.
[0060] Combination Figure 7 , Figure 8 , Figure 9 The results show that, under the same parameters, when gold, silver, and platinum are selected as the metal layers of a high-performance photoelectric conversion bio-optical chip, the photoelectric chemical performance, from high to low, is: gold > silver > platinum.
[0061] Example 7: A preferred MetaSPR chip was used for Protein A detection of affinity for different concentrations of IgG. The preferred MetaSPR chip has a titanium interconnect layer with a thickness of 9 nm, a photoelectric conversion material functional layer with a thickness of 25 nm, a first gold metal layer with a thickness of 15 nm, and a second gold metal layer with a thickness of 40 nm.
[0062] Chip modification: Dilute Protein A to 10 μg / mL with phosphate-buffered saline (PBS) at pH 7.4, add 50 μL to the chip reaction wells, and incubate at 4 °C for 14–16 h to immobilize Protein A on the chip surface. Then rinse with buffer to remove unbound Protein A.
[0063] Affinity test: IgG solutions of different concentrations (32 μg / mL, 16 μg / mL, 8 μg / mL, 4 μg / mL, 2 μg / mL, 1 μg / mL, 0.5 μg / mL, 0 μg / mL) were prepared using PBS.
[0064] Different concentrations of IgG solutions were sequentially added to the wells of a chip modified with Protein A. After a period of reaction, the changes in the photoelectric response signal of the chip were detected to characterize the binding of Protein A and IgG.
[0065] Experimental results are as follows Figure 10As shown: The preferred MetaSPR chip produces high response values for Protein A detection of different concentrations of IgG, with a sensitivity increase of 50 times compared to the response values of existing SPR chips.
[0066] It should be noted that in this article, relational terms such as first and second are only used to refer to... Distinguishing one entity or operation from another does not necessarily require or imply any such actual relationship or order between those entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0067] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A high-performance photoelectric conversion bio-optical chip, characterized in that, The chip, from bottom to top, comprises: Polymer substrate; Titanium bonding layer; First metal layer; Functional layers of photoelectric conversion materials and The second metal layer.
2. The high-performance photoelectric conversion bio-optical chip according to claim 1, characterized in that: The polymer substrate is a polyethylene terephthalate substrate.
3. The high-performance photoelectric conversion bio-optical chip according to claim 1, characterized in that: The photoelectric conversion material functional layer is a semiconductor thin film deposited on the first metal layer.
4. The high-performance photoelectric conversion bio-optical chip according to claim 1, characterized in that: The thickness of the titanium connecting layer is 5-50 nm, the thickness of the photoelectric conversion material functional layer is 20-100 nm, and the thickness of both the first metal layer and the second metal layer is 10-100 nm.
5. A high-performance photoelectric conversion bio-optical chip according to claim 4, characterized in that: The titanium connecting layer has a thickness of 9 nm, the photoelectric conversion material functional layer has a thickness of 25 nm, the first metal layer has a thickness of 15 nm, and the second metal layer has a thickness of 20 nm.
6. The high-performance photoelectric conversion bio-optical chip according to claim 4, characterized in that: The titanium connecting layer has a thickness of 9 nm, the photoelectric conversion material functional layer has a thickness of 25 nm, the first metal layer has a thickness of 15 nm, and the second metal layer has a thickness of 40 nm.
7. A high-performance photoelectric conversion bio-optical chip according to any one of claims 1-6, characterized in that: The surface of the polymer substrate is an array of nanocup-shaped structures with periodic nanopatterns.
8. A method for fabricating a high-performance photoelectric conversion bio-optical chip as described in claim 7, characterized in that, Includes the following steps: S1. Prepare a mold with periodic nanopatterns on its surface and perform hydrophobic treatment on the mold; S2. Apply UV-curable adhesive to the surface of the mold, cover with a polymer film, cure with ultraviolet light, and then peel the polymer substrate with nanocup array structure formed after curing from the mold. S3. Using ion beam vacuum evaporation deposition technology, a titanium connecting layer, a first metal layer, a photoelectric conversion material functional layer, and a second metal layer are sequentially deposited on the surface of the nanocup array structure on the polymer substrate to obtain the MetaSPR sensor chip with nanocup array structure.
9. The method for fabricating a high-performance photoelectric conversion bio-optical chip according to claim 8, characterized in that: In step S1, a mold with a nano-conical pattern is prepared on a quartz substrate using laser interference lithography. Among them, the original surface of the quartz substrate has a periodic array of conical nanopillars.
10. The method for fabricating a high-performance photoelectric conversion bio-optical chip according to claim 8, characterized in that: In step S3, during the preparation of the photoelectric conversion material functional layer, the solid semiconductor material is converted into a gaseous state by vacuum evaporation with an ion beam. The gaseous particles nucleate, grow, and merge on the surface of the polymer substrate to form a continuous thin film.
11. An application of the high-performance photoelectric conversion bio-optical chip as described in claim 7 in biomolecular detection, characterized in that: The photoelectrochemical properties of the chip are used to detect the concentration of target molecules in a solution or to analyze intermolecular affinity.