A shunt with electromagnetic interference absorption noise electromagnetic wave function and a manufacturing method thereof

Abstract

The application relates to the technical field of electronic information engineering, and discloses a shunt with electromagnetic interference resistance, noise absorption and electromagnetic wave absorption functions and a manufacturing method thereof. The shunt comprises a manganese copper element, a high-frequency electromagnetic wave absorbing layer arranged outside the manganese copper element, a low-frequency electromagnetic wave suppressing layer arranged outside the high-frequency electromagnetic wave absorbing layer, and a first functional material layer arranged on the outer surface of the manganese copper element, a second functional material layer arranged on the outer surface of the high-frequency electromagnetic wave absorbing layer, and a third functional material layer arranged on the outer surface of the low-frequency electromagnetic wave suppressing layer. The first functional material layer and the third functional material layer comprise an aluminum film layer deposited on the inner side by a physical vapor deposition method, and an aluminum oxide layer formed on the outer surface of the aluminum film layer by treatment. The shunt has the high-frequency electromagnetic wave absorbing layer and the low-frequency electromagnetic wave suppressing layer, can reduce the interference of electromagnetic noise on the performance of the shunt, and improves the stability and measurement accuracy in a complex electromagnetic environment.

Description

Technical Field

[0001] This invention relates to the field of electronic information engineering technology, and more specifically, to a shunt with electromagnetic interference resistance and noise absorption electromagnetic wave function and its manufacturing method. Background Technology

[0002] As a key terminal for electricity metering and data acquisition, the accuracy of smart meters directly affects the reliability of electricity metering settlement and power grid operation analysis. Because smart meters are installed in a complex electromagnetic environment, and the voltage and current signals output by the meter's sensors are analog signals with relatively small amplitudes, they are susceptible to interference from noise and electromagnetic waves, which affects the meter's precision and accuracy.

[0003] When the sensor of the electricity meter uses a sampling resistor (manganese copper shunt), the voltage and current signals output by the sensor are analog signals with small amplitudes. The voltage and current signals of the power grid are converted into small signals proportionally by a high-precision sensor. When the current passes through, it interacts with noise electromagnetic waves, resulting in waveform distortion. The waveform distortion leads to a decrease in the accuracy of instantaneous power calculation and energy integration.

[0004] This further leads to a decrease in the accuracy and digital reliability of high-speed mathematical operations on the acquired digital voltage and current sequences. Summary of the Invention

[0005] In view of this, the present invention proposes a shunt with anti-electromagnetic interference and noise electromagnetic wave absorption function and its manufacturing method, aiming to solve the problem that manganese copper shunts are susceptible to noise electromagnetic wave interference in the current technology.

[0006] This invention provides a shunt with electromagnetic interference resistance and noise absorption electromagnetic wave function, including a manganese copper element, a high-frequency electromagnetic wave absorbing layer disposed outside the manganese copper element and composed of at least ferrite to absorb noise conducted by the manganese copper element, a low-frequency electromagnetic wave suppression layer disposed outside the high-frequency electromagnetic wave absorbing layer and composed of amorphous FeSiB material or nanocrystalline FeSiBCu material and pure iron, a first functional material layer disposed between the manganese copper element and the high-frequency electromagnetic wave absorbing layer, a second functional material layer disposed between the high-frequency electromagnetic wave absorbing layer and the low-frequency electromagnetic wave suppression layer, and a third functional material layer disposed on the outer surface of the low-frequency electromagnetic wave suppression layer; The first functional material layer and the third functional material layer include an aluminum film layer deposited on the inner side using physical vapor deposition, and an aluminum oxide layer formed on the outer surface of the aluminum film layer after treatment.

[0007] Preferably, the high-frequency electromagnetic wave absorbing layer is formed by mixing NiZn material, MgZn material and CuZn material in a first preset ratio.

[0008] Preferably, the thickness of the third functional material layer is at least 6 times the thickness of the first functional material layer, and the thickness of the third functional material layer is at least 5 times the thickness of the second functional material layer.

[0009] Preferably, the thickness of the high-frequency electromagnetic wave absorbing layer is 9.5μm-10μm; the thickness of the low-frequency electromagnetic wave suppressing layer is 9.5μm-10μm.

[0010] Preferably, the low-frequency electromagnetic wave suppression layer comprises 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material, and 4%-10% pure iron material.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: (1) A high-frequency electromagnetic wave absorbing layer is set up to absorb the high-frequency noise electromagnetic waves conducted by the manganese copper element, which effectively weakens the interference of high-frequency electromagnetic noise on the performance of the shunt. At the same time, a low-frequency electromagnetic wave suppression layer is set up to suppress the low-frequency noise electromagnetic waves conducted by the manganese copper element, so as to reduce the interference of noise electromagnetic waves on the manganese copper shunt and improve the stability and measurement accuracy of the shunt in complex electromagnetic environment.

[0012] (2) Set up the first, second and third functional material layers to shield the electromagnetic waves outside the manganese copper element from interference with the transmission waves of the manganese copper element. Since there are 5 coating layers on the surface of the manganese copper element, an effective inductive reactance is formed for the sensor. The frequency of the power is constant at 50Hz, so the magnitude of the inductive reactance of the sensor is also constant. In order to ensure the accuracy of power measurement and the reliability of data, compensation is made in the processor through an algorithm.

[0013] On the other hand, the present invention also provides a method for manufacturing a shunt with electromagnetic interference resistance and noise absorption electromagnetic wave function, the manufacturing method comprising the following steps: S1. A first aluminum film layer is deposited on the outer surface of the manganese copper element by physical vapor deposition. The outer surface of the first aluminum film layer is subjected to oxidation heat treatment to form a dense first aluminum oxide layer, thus obtaining the first functional material layer. S2. High-frequency electromagnetic wave absorbing material is coated onto the outer surface of the first functional material layer by electrostatic spraying to obtain a high-frequency electromagnetic wave absorbing layer. S3. A second aluminum film layer is deposited on the outer surface of the high-frequency electromagnetic wave absorbing layer by physical vapor deposition to obtain the second functional material layer. S4. Low-frequency electromagnetic wave suppression material is coated onto the outer surface of the second functional material layer by electrostatic spraying to obtain a low-frequency electromagnetic wave suppression layer. S5. A third aluminum film layer is deposited on the outer surface of the low-frequency electromagnetic wave suppression layer by physical vapor deposition. The third aluminum film layer is naturally oxidized to form a second aluminum oxide layer on the surface, thus obtaining the third functional material layer, which is a shunt with the function of resisting electromagnetic interference and absorbing noise electromagnetic waves.

[0014] Preferably, the high-frequency electromagnetic wave absorbing layer includes the following processing steps: S20. NiZn, MgZn and CuZn materials are pulverized to a particle size of 1μm ± 0.15μm with an average particle size, and the particle size is in a close-packed distribution. S21. The NiZn material, MgZn material and CuZn material are mixed evenly in a first preset ratio to obtain a high-frequency electromagnetic wave absorbing material, and then the high-frequency electromagnetic wave absorbing material is coated onto the outer surface of the first functional material layer by electrostatic spraying to obtain the high-frequency electromagnetic wave absorbing layer.

[0015] Preferably, the low-frequency electromagnetic wave suppression layer includes the following processing steps: S40. Pulverize amorphous FeSiB material or nanocrystalline FeSiBCu material to an average particle size of 1μm±0.15μm and ensure that the particle size is in a close-packed distribution. The pure iron material is crushed to an average particle size of 0.50μm±0.08μm, and its particle size is in a close-packed distribution. S41. The amorphous FeSiB material or nanocrystalline FeSiBCu material is mixed with the pure iron material in a second preset ratio to obtain a low-frequency electromagnetic wave suppression material. The low-frequency electromagnetic wave suppression material is then coated onto the outer surface of the second functional material layer by electrostatic spraying to obtain the low-frequency electromagnetic wave suppression layer.

[0016] Preferably, the second preset ratio is 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material, and 4%-10% pure iron material.

[0017] Preferably, the process conditions for the first aluminum oxide layer are as follows: oxidation is carried out in a heat treatment furnace at 700℃±20℃, so that the oxidation rate of the first aluminum film layer reaches more than 98%; the process conditions for the second aluminum oxide layer are as follows: the third aluminum film layer is oxidized in a natural state to form the second aluminum oxide layer on the surface of the third aluminum film layer.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows: (1) The electrostatic spraying method is used to set the high-frequency electromagnetic wave absorbing layer and the low-frequency electromagnetic wave suppressing layer. The operation is simple and does not require complicated coating equipment or high-temperature curing process, which greatly reduces the production difficulty and equipment investment cost, while significantly improving production efficiency. At the same time, electrostatic spraying can ensure that the absorbing layer material and the suppressing layer are uniformly attached to the target surface, avoiding problems such as bubbles, wrinkles or uneven thickness that may occur in traditional coating processes.

[0019] (2) The first, second, and third functional material layers are set by physical vapor deposition, which can form a metal film layer with strong adhesion. This effectively avoids problems such as interlayer peeling and detachment that may occur in traditional coating methods, thereby strengthening the high-frequency electromagnetic wave absorbing layer and the low-frequency electromagnetic wave suppressing layer and preventing detachment. At the same time, the functional material layer can also shield the electromagnetic waves outside the manganese copper element from interfering with the transmission waves of the manganese copper element. Attached Figure Description

[0020] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 A schematic diagram of a shunt with electromagnetic interference resistance and noise absorption function provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the third functional material layer provided in an embodiment of the present invention; Figure 3 A comparison diagram of the absorption peaks of each material in the high-frequency electromagnetic wave absorbing layer and the electromagnetic wave absorption peaks after mixing, provided in an embodiment of the present invention. Figure 4 This is a schematic diagram of the electromagnetic wave absorption peak of CuZn material provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the electromagnetic wave absorption peak of NiZn material provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the electromagnetic wave absorption peak of MgZn material provided in an embodiment of the present invention.

[0021] In the figure: 1. Manganese copper element; 2. High-frequency electromagnetic wave absorbing layer; 3. Low-frequency electromagnetic wave suppression layer; 41. First functional material layer; 42. Second functional material layer; 43. Third functional material layer; 431. Third aluminum film layer; 432. Second aluminum oxide layer. Detailed Implementation

[0022] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the disclosure to those skilled in the art. It should be noted that, unless otherwise specified, embodiments and features in the embodiments of the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0023] Example 1

[0024] See Figure 1 This embodiment provides a shunt with electromagnetic interference resistance and noise absorption electromagnetic wave function, including a manganese copper element, a high-frequency electromagnetic wave absorbing layer 2 disposed outside the manganese copper element and composed of at least ferrite to absorb noise conducted by the manganese copper element, a low-frequency electromagnetic wave suppression layer 3 disposed outside the high-frequency electromagnetic wave absorbing layer 2 and composed of amorphous FeSiB material or nanocrystalline FeSiBCu material and pure iron, a first functional material layer 41 disposed between the manganese copper element and the high-frequency electromagnetic wave absorbing layer 2, a second functional material layer 42 disposed between the high-frequency electromagnetic wave absorbing layer 2 and the low-frequency electromagnetic wave suppression layer 3, and a third functional material layer 43 disposed on the outer surface of the low-frequency electromagnetic wave suppression layer 3; The first functional material layer 41 and the third functional material layer 43 include an aluminum film layer deposited on the inner side using physical vapor deposition, and an aluminum oxide layer formed on the outer surface of the aluminum film layer after processing.

[0025] The high-frequency electromagnetic wave absorbing layer 2 is used to absorb the high-frequency noise electromagnetic waves conducted by the manganese copper components, effectively reducing the interference of high-frequency electromagnetic noise on the shunt performance. At the same time, the low-frequency electromagnetic wave suppression layer 3 is used to suppress the low-frequency noise electromagnetic waves conducted by the manganese copper components, thereby reducing the interference of noise electromagnetic waves on the manganese copper shunt and improving the stability and measurement accuracy of the shunt in complex electromagnetic environments.

[0026] The first functional material layer 41, the second functional material layer 42, and the third functional material layer 43 are used to shield the manganese copper element from interference by external electromagnetic waves. Because there are five coating layers on the surface of the manganese copper element, an effective inductive reactance is formed for the sensor. Since the frequency of the power supply is a constant 50Hz, the magnitude of the inductive reactance for the sensor is also constant. To ensure the accuracy of power measurement and the reliability of the data, compensation is performed in the processor using an algorithm.

[0027] Furthermore, both the first functional material layer 41 and the third functional material layer 43 are composed of an inner aluminum film layer and an outer aluminum oxide layer formed by processing. The aluminum film layer, with its good conductivity, provides a certain degree of electromagnetic shielding, reducing the intrusion of external electromagnetic waves and the leakage of internal electromagnetic waves. The aluminum oxide layer, on the other hand, possesses excellent insulation and corrosion resistance, effectively protecting the internal functional layers from external environmental erosion, extending the service life of the shunt, ensuring the insulation performance between the functional layers, preventing short circuits and other problems, and guaranteeing the stability and reliability of the overall shunt structure.

[0028] Preferably, the thickness of the high-frequency electromagnetic wave absorbing layer 2 is 9.5 μm-10 μm, and the high-frequency electromagnetic wave absorbing layer 2 is formed by mixing NiZn material, MgZn material and CuZn material in a first preset ratio. For example, NiZn material, MgZn material and CuZn material each account for 15%-40%, such as 15%, 20%, 25%, 30%, 35% or 40%, which can be adjusted according to the actual situation.

[0029] The high-frequency electromagnetic wave absorbing layer 22 is formed by mixing NiZn, MgZn and CuZn materials, combined with Figure 4 , Figure 5 and Figure 6 As shown, NiZn, MgZn, and CuZn each possess certain absorption response characteristics to high-frequency electromagnetic waves of different frequencies. By pulverizing them to a specific particle size and mixing them uniformly, the synergistic effect between different materials can broaden the absorption frequency band of a single ferrite absorbing material for high-frequency electromagnetic waves. Since the shunt operates in a complex electromagnetic environment, noise electromagnetic waves ranging from 0Hz to 1GHz can affect it. Because NiZn, MgZn, and CuZn materials have different absorption peaks for electromagnetic waves, using a single material would result in a single absorption peak, leading to weak absorption of electromagnetic waves outside the absorption peak range. Therefore, mixing the three materials together avoids a single absorption peak, ensuring strong absorption of electromagnetic waves in the 1MHz-1GHz range. Figure 3 As shown, when the three ferrite materials are mixed together, their different characteristic absorption peaks undergo multi-element composite formation. By utilizing the superposition and complementary effect of their respective absorption peaks, a 'stepped' connection absorption of electromagnetic waves is achieved in a wide frequency band, thereby effectively suppressing the resonance valleys of individual materials and obtaining flat absorption spectrum characteristics.

[0030] Preferably, the thickness of the third functional material layer 43 is at least 6 times the thickness of the first functional material layer 41, and the thickness of the third functional material layer 43 is at least 5 times the thickness of the second functional material layer 42. The thickness of the first functional material layer 41 is, for example, 0.95 μm-1.05 μm; the thickness of the second functional material layer 42 is, for example, 1 μm-1.2 μm; and the thickness of the third functional material layer 43 is, for example, 11.5 μm-12 μm; these can be adjusted according to actual conditions.

[0031] Preferably, the thickness of the low-frequency electromagnetic wave suppression layer 3 is 9.5μm-10μm, and the low-frequency electromagnetic wave suppression layer 3 includes 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material, and 4%-10% pure iron material.

[0032] The low-frequency electromagnetic wave suppression layer 3 is formed by mixing amorphous FeSiB material or nanocrystalline FeSiBCu material with pure iron material. The amorphous FeSiB material or nanocrystalline FeSiBCu material possesses soft magnetic properties, effectively enhancing the magnetic loss capability against low-frequency electromagnetic waves and suppressing low-frequency noise electromagnetic waves conducted by the manganese-copper material. The addition of iron powder effectively fills the gaps in the FeSiB material or nanocrystalline FeSiBCu material, increasing the permeability and thus enhancing the electromagnetic wave suppression effect.

[0033] Example 2

[0034] This embodiment provides a method for manufacturing a shunt with electromagnetic interference resistance and noise absorption electromagnetic wave function, combined with... Figure 1 and Figure 2 As shown, the manufacturing method includes the following steps: S1. A first aluminum film layer is deposited on the outer surface of the manganese copper element by physical vapor deposition. The outer surface of the first aluminum film layer is subjected to oxidation heat treatment to form a dense first aluminum oxide layer, thus obtaining the first functional material layer 41. S2. High-frequency electromagnetic wave absorbing material is coated onto the outer surface of the first functional material layer 41 by electrostatic spraying to obtain high-frequency electromagnetic wave absorbing layer 2. S3. A second aluminum film layer is deposited on the outer surface of the high-frequency electromagnetic wave absorbing layer 2 by physical vapor deposition to obtain the second functional material layer 42. S4. Low-frequency electromagnetic wave suppression material is coated onto the outer surface of the second functional material layer 42 by electrostatic spraying to obtain low-frequency electromagnetic wave suppression layer 3. S5. A third aluminum film layer 431 is deposited on the outer surface of the low-frequency electromagnetic wave suppression layer 3 by physical vapor deposition. The third aluminum film layer 431 is naturally oxidized to form a second aluminum oxide layer 432 on the surface, thus obtaining the third functional material layer 43, which is a shunt with the function of resisting electromagnetic interference and absorbing noise electromagnetic waves.

[0035] In this embodiment, an electrostatic spraying method is used to set the high-frequency electromagnetic wave absorbing layer 2 and the low-frequency electromagnetic wave suppressing layer 3. The operation is simple, requiring no complex coating equipment or high-temperature curing process, which greatly reduces the production difficulty and equipment investment cost, while significantly improving production efficiency. At the same time, electrostatic spraying can ensure that the absorbing layer material and the suppressing layer are uniformly adhered to the target surface, avoiding problems such as bubbles, wrinkles or uneven thickness that may occur in traditional coating processes.

[0036] Furthermore, in this embodiment, the first functional material layer 41, the second functional material layer 42, and the third functional material layer 43 are deposited using physical vapor deposition, which can form a metal film layer with strong adhesion. This effectively avoids problems such as interlayer peeling and detachment that may occur in traditional coating methods, thereby reinforcing the high-frequency electromagnetic wave absorbing layer 2 and the low-frequency electromagnetic wave suppressing layer 3 and preventing detachment. At the same time, the functional material layers can also shield the electromagnetic waves outside the manganese copper element from interfering with the transmitted electromagnetic waves of the manganese copper element.

[0037] Preferably, the high-frequency electromagnetic wave absorbing layer 2 includes the following processing steps: S20. NiZn, MgZn and CuZn materials are pulverized to a particle size of 1μm ± 0.15μm with an average particle size, and the particle size is in a close-packed distribution.

[0038] In a close-packed state, the material particles are more tightly bonded, and the interaction forces are enhanced. Uniform mixing ensures that each component is evenly distributed in the material, avoiding performance instability caused by excessively high or low local component levels.

[0039] S21. NiZn, MgZn, and CuZn materials are mixed uniformly according to a first preset ratio to obtain a high-frequency electromagnetic wave absorbing material. The high-frequency electromagnetic wave absorbing material is then coated onto the outer surface of the first functional material layer 41 using electrostatic spraying to obtain a high-frequency electromagnetic wave absorbing layer 2. The first preset ratio is, for example, 15%-40% each of NiZn, MgZn, and CuZn materials. The specific ratio can be adjusted according to actual conditions.

[0040] Preferably, the low-frequency electromagnetic wave suppression layer 3 includes the following processing steps: S40. Pulverize amorphous FeSiB material or nanocrystalline FeSiBCu material to an average particle size of 1μm±0.15μm and ensure that the particle size is in a close-packed distribution. The pure iron material is crushed to an average particle size of 0.50μm±0.08μm, and its particle size is in a close-packed distribution. S41. Mix amorphous FeSiB material or nanocrystalline FeSiBCu material with pure iron material in a second preset ratio to obtain a low-frequency electromagnetic wave suppression material. Apply the low-frequency electromagnetic wave suppression material to the outer surface of the second functional material layer 42 by electrostatic spraying to obtain a low-frequency electromagnetic wave suppression layer 3.

[0041] Since the particles of amorphous FeSiB or nanocrystalline FeSiBCu materials are in a plate-like state after crushing, there are gaps between the microstructures of these plates. Pure iron, after crushing, can be processed into granules, which can then fill these gaps, increasing the density of the low-frequency electromagnetic wave suppression material. This increased density helps optimize the distribution of its internal electromagnetic parameters, reduces the scattering loss of electromagnetic waves within the material, enhances its absorption and attenuation capabilities for low-frequency electromagnetic waves, and thus significantly improves the low-frequency electromagnetic wave suppression effect.

[0042] Preferably, the second preset ratio is 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material and 4%-10% pure iron material. For example, 90% amorphous FeSiB material or nanocrystalline FeSiBCu material is mixed with 10% pure iron material; or 93% amorphous FeSiB material or nanocrystalline FeSiBCu material is mixed with 7% pure iron material; or 96% amorphous FeSiB material or nanocrystalline FeSiBCu material is mixed with 4% pure iron material. The specific ratio can be adjusted according to actual conditions.

[0043] Preferably, the process conditions for the first aluminum oxide layer are as follows: oxidation is carried out in a heat treatment furnace at 700℃±20℃, so that the oxidation rate of the first aluminum film layer reaches more than 98%; the process conditions for the second aluminum oxide layer 432 are as follows: the third aluminum film layer 431 is oxidized in a natural state, and the second aluminum oxide layer 432 is formed on the surface of the third aluminum film layer 431.

[0044] The first aluminum oxide layer, through a high-temperature oxidation process, ensures a thorough and uniform oxidation reaction, thereby forming a dense and complete underlying oxide film. The second aluminum oxide layer 432 is formed by the natural oxidation of the third aluminum film layer 431. The natural oxidation process takes place at room temperature, utilizing oxygen in the air to react with the surface of the third aluminum film layer 431, instantly forming an oxide film on the surface of the third aluminum film layer 431 as an outer protective layer, further enhancing the overall structure's oxidation resistance. Moreover, the natural oxidation process is simple to operate and has a low cost.

[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function, comprising a manganese copper element (1), characterized in that, It also includes a high-frequency electromagnetic wave absorbing layer (2) disposed on the outside of the manganese copper element (1) and composed of at least ferrite to absorb noise conducted by the manganese copper element (1); a low-frequency electromagnetic wave suppression layer (3) disposed on the outside of the high-frequency electromagnetic wave absorbing layer (2) and composed of amorphous FeSiB material or nanocrystalline FeSiBCu material and pure iron; a first functional material layer (41) disposed between the manganese copper element (1) and the high-frequency electromagnetic wave absorbing layer (2); a second functional material layer (42) disposed between the high-frequency electromagnetic wave absorbing layer (2) and the low-frequency electromagnetic wave suppression layer (3); and a third functional material layer (43) disposed on the outer surface of the low-frequency electromagnetic wave suppression layer (3). The first functional material layer (41) and the third functional material layer (43) include an aluminum film layer deposited on the inside by physical vapor deposition, and an aluminum oxide layer formed on the outer surface of the aluminum film layer by processing.

2. A shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function according to claim 1, characterized in that, The high-frequency electromagnetic wave absorbing layer (2) is formed by mixing NiZn material, MgZn material and CuZn material in a first preset ratio.

3. A shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function according to claim 1, characterized in that, The thickness of the third functional material layer (43) is at least 6 times the thickness of the first functional material layer (41), and the thickness of the third functional material layer (43) is at least 5 times the thickness of the second functional material layer (42).

4. A shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function according to claim 1, characterized in that, The thickness of the high-frequency electromagnetic wave absorbing layer (2) is 9.5μm-10μm; the thickness of the low-frequency electromagnetic wave suppressing layer (3) is 9.5μm-10μm.

5. A shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function according to claim 1, characterized in that, The low-frequency electromagnetic wave suppression layer (3) comprises 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material and 4%-10% pure iron material.

6. A method for manufacturing a shunt with electromagnetic interference suppression and noise absorption electromagnetic wave function, characterized in that, The manufacturing method includes the following steps: S1. A first aluminum film layer is deposited on the outer surface of the manganese copper element (1) by physical vapor deposition. The outer surface of the first aluminum film layer is subjected to oxidation heat treatment to form a dense first aluminum oxide layer, thus obtaining the first functional material layer (41). S2. High-frequency electromagnetic wave absorbing material is coated onto the outer surface of the first functional material layer (41) by electrostatic spraying to obtain a high-frequency electromagnetic wave absorbing layer (2). S3. A second aluminum film layer is deposited on the outer surface of the high-frequency electromagnetic wave absorbing layer (2) by physical vapor deposition to obtain the second functional material layer (42). S4. Low-frequency electromagnetic wave suppression material is applied to the outer surface of the second functional material layer (42) by electrostatic spraying to obtain a low-frequency electromagnetic wave suppression layer (3). S5. A third aluminum film layer (431) is deposited on the outer surface of the low-frequency electromagnetic wave suppression layer (3) by physical vapor deposition. The third aluminum film layer (431) is naturally oxidized to form a second aluminum oxide layer (432) on the surface, thus obtaining the third functional material layer (43), which is a shunt with the function of resisting electromagnetic interference and absorbing noise electromagnetic waves.

7. The manufacturing method of an electromagnetic wave shunt for resisting electromagnetic interference and absorbing noise according to claim 6, characterized in that, The high-frequency electromagnetic wave absorbing layer (2) includes the following processing steps: S20. NiZn, MgZn and CuZn materials are pulverized to a particle size of 1μm ± 0.15μm with an average particle size, and the particle size is in a close-packed distribution. S21. The NiZn material, MgZn material and CuZn material are mixed evenly in a first preset ratio to obtain a high-frequency electromagnetic wave absorbing material, and then the high-frequency electromagnetic wave absorbing material is coated onto the outer surface of the first functional material layer (41) by electrostatic spraying to obtain the high-frequency electromagnetic wave absorbing layer (2).

8. The manufacturing method of an electromagnetic wave shunt for resisting electromagnetic interference and absorbing noise according to claim 6, characterized in that, The low-frequency electromagnetic wave suppression layer (3) includes the following processing steps: S40. Pulverize amorphous FeSiB material or nanocrystalline FeSiBCu material to an average particle size of 1μm±0.15μm and ensure that the particle size is in a close-packed distribution. The pure iron material is crushed to an average particle size of 0.50μm±0.08μm, and its particle size is in a close-packed distribution. S41. The amorphous FeSiB material or nanocrystalline FeSiBCu material is mixed with the pure iron material in a second preset ratio to obtain a low-frequency electromagnetic wave suppression material. The low-frequency electromagnetic wave suppression material is then coated onto the outer surface of the second functional material layer (42) by electrostatic spraying to obtain the low-frequency electromagnetic wave suppression layer (3).

9. The manufacturing method of an electromagnetic wave shunt for resisting electromagnetic interference and absorbing noise according to claim 8, characterized in that, The second preset ratio is 90%-96% amorphous FeSiB material or nanocrystalline FeSiBCu material, and 4%-10% pure iron material.

10. The manufacturing method of an electromagnetic wave shunt for resisting electromagnetic interference and absorbing noise according to claim 6, characterized in that, The process conditions for the first aluminum oxide layer are as follows: oxidation is carried out in a heat treatment furnace at 700℃±20℃, so that the oxidation rate of the first aluminum film layer reaches more than 98%; the process conditions for the second aluminum oxide layer (432) are as follows: the third aluminum film layer (431) is oxidized in the natural state, and the second aluminum oxide layer (432) is formed on the surface of the third aluminum film layer (431).

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