A method for testing a semiconductor product with extra-high voltage

Abstract

The application relates to the technical field of new energy, and discloses a special high-voltage testing method for semiconductor product manufacturing, which comprises a pretreatment stage, a testing stage, a post-treatment stage and material selection. The special high-voltage testing method for semiconductor product manufacturing can effectively improve the product stability of new energy semiconductor products in the high-voltage testing packaging process through the design of special insulation materials or jigs. Modern semiconductor product packaging implantation methods often adopt automatic production lines, which can greatly improve production efficiency and reduce labor costs. By selecting appropriate packaging materials and processes, the material cost and production cost can be reduced under the premise of ensuring product quality. Precise packaging processes and strict quality control can effectively reduce the waste rate and improve the qualified rate of products, so that the production cost is reduced.

Description

Technical Field

[0001] This invention relates to the field of new energy technology, specifically to an ultra-high voltage testing method for semiconductor product manufacturing. Background Technology

[0002] Driven by the rapid development of the semiconductor industry stemming from new energy sources and the continuous pursuit of ultra-high voltage withstand capabilities, the new energy semiconductor industry has experienced rapid growth globally, fueled by technological advancements. From initial basic materials research to today's advanced process and packaging technologies, the semiconductor industry has undergone tremendous transformation. This rapid development has propelled the miniaturization, multi-functionality, and intelligence of electronic products, while simultaneously placing higher demands on the withstand voltage and leakage current technologies of new energy semiconductor products. Withstand voltage testing is a crucial step in the manufacturing process of new energy semiconductor products, directly impacting their reliability, performance, and lifespan, as well as the high voltage upgrades required for fast charging of new energy vehicles. From the original 400V to the current 900V product testing requirements, excellent packaging technology can protect semiconductor chips from external environmental interference and damage, while providing stable electrical connections and heat dissipation performance. Therefore, continuous innovation and improvement of ultra-high voltage testing methods for new energy semiconductor products are of great significance for improving product quality, reducing costs, and meeting market demands. This application proposes an ultra-high voltage testing method for semiconductor products. Summary of the Invention

[0003] (a) Technical problems to be solved To address the shortcomings of existing technologies, this invention provides an ultra-high voltage testing method for semiconductor product manufacturing. This method has the advantages of improving product stability during high-voltage testing and packaging, reducing production costs, and solving the problem of semiconductor products being easily damaged during high-voltage testing.

[0004] (II) Technical Solution To achieve the above objectives, the present invention provides the following technical solution: a method for testing ultra-high voltage power for semiconductor product manufacturing, characterized by comprising a pre-processing stage, a testing stage, a post-processing stage, and material selection, with each stage working in concert to ensure testing accuracy, product safety, and testing efficiency. The specific steps are as follows: S101. Product delivery to specific fixture: The semiconductor product to be tested (including power semiconductor chips, semiconductor modules and other devices requiring ultra-high voltage verification) is precisely delivered into the corresponding station of the customized specific fixture according to the preset positioning standard. This ensures that the product pins, test contacts and conductive probes in the fixture are precisely aligned without offset or poor contact. At the same time, dust, metal debris and other impurities are cleaned from the fixture station and the product surface to avoid impurities affecting the test conductivity or causing test errors. S102, Specific Fixture Pressing: Start the fixture pressing mechanism and use the preset pressure parameters (set according to the packaging material and pin strength of the semiconductor product, usually 5-15MPa) to press the upper and lower molds of the fixture smoothly together, ensuring that the probes in the fixture are in close contact with the product test points, and the contact resistance is controlled within 10mΩ. At the same time, monitor the change of pressing force in real time during the pressing process to avoid damage to the product package or pins due to excessive pressure, and poor contact due to insufficient pressure. S103. High-voltage testing using a high-voltage power supply: Connect an ultra-high voltage DC power supply that meets the testing standards. According to the design specifications of the semiconductor product (such as rated withstand voltage and test voltage standards), set the test voltage parameters, start the high-voltage power supply, and gradually apply the ultra-high voltage according to the preset voltage rise rate to avoid excessively rapid voltage rise that could damage the product. The entire testing process is carried out in a sealed, anti-static, and anti-electromagnetic interference testing environment, with the ambient temperature controlled at 23±2℃ and the humidity controlled at 45%-65%. S104. Monitor ramp-up voltage and leakage current to determine product qualification: Use a high-precision voltage monitoring module and leakage current monitoring instrument to monitor the ramp-up voltage change curve and leakage current value in real time during the test. The leakage current monitoring accuracy is not less than 1μA. Set qualification criteria: If the ramp-up voltage rises steadily during the test without sudden drops or jumps, and the leakage current value stabilizes within the preset standard range after applying and maintaining the set extra-high voltage for a preset time, the product is considered qualified. If abnormal fluctuations in ramp-up voltage occur, the leakage current exceeds the standard range, or the product shows signs of breakdown or overheating, the product is considered unqualified. Immediately disconnect the high-voltage power supply and record the abnormal data for subsequent fault analysis.

[0005] Preferably, the pre-processing stage includes feeding the product into a specific fixture. This process involves using a specific semiconductor product for ultra-high voltage testing, monitoring the ramp-up voltage and leakage current, and forming a complete semiconductor device. Specifically, this includes feeding to closure, applying ultra-high voltage, monitoring the ramp-up voltage and leakage current, and determining whether the product is qualified. Detailed steps are as follows: Step 1: Feeding material into a specific fixture: Apply ultra-high voltage to the product using a specific fixture, monitor the creep voltage and leakage current, and determine whether the product is qualified; Step 2, Specific Fixture: The product is subjected to an ultra-high voltage test using a specific fixture; Step 3: Monitor current and voltage: Monitor the ramp-up voltage and leakage current. If the leakage current of the product is within the standard range after being subjected to the set ultra-high voltage, it is determined whether it is qualified.

[0006] Preferably, in step one, feeding the material into a specific fixture: First, the specific fixture is pre-treated by checking the wear and conductivity of the probes inside the fixture, and cleaning the oxide layer and stains on the probe surface to ensure that the probes are intact and have good conductivity. Then, the semiconductor product to be tested is accurately fed into the testing station of the fixture by an automated feeding mechanism according to the product positioning mark, ensuring that the test contacts of the product correspond one-to-one with the fixture probes, and the positioning deviation does not exceed 0.1mm. After feeding, the fixture positioning detection module is activated to verify the product positioning accuracy. If the positioning deviation exceeds the allowable range, an alarm signal is immediately issued, subsequent operations are stopped, the product position is manually adjusted and repositioned until the requirements are met.

[0007] Preferably, in step two, specific fixture debugging and closure: After the product positioning is qualified, the parameters of the specific fixture are debugged, and parameters such as pressing pressure and pressing time are set to ensure that the parameters match the specifications of the product to be tested; after debugging, the fixture closure procedure is started, the upper mold of the fixture slowly descends, and presses smoothly to the preset pressure and remains stable. At the same time, the contact resistance after the fixture is closed is monitored. If the contact resistance exceeds 10mΩ, it is necessary to re-press or adjust the probe position until the contact resistance meets the requirements; at this time, the fixture is in the test state, ready for the subsequent application of ultra-high voltage. After the fixture is closed, it must be kept in a sealed state to prevent external interference from affecting the test results during the test.

[0008] Preferably, in step three, monitoring the reference current and voltage: before applying ultra-high voltage, start the monitoring system to monitor the reference parameters of the fixture and product, including the reference voltage of the fixture probe and the no-load leakage current; if the reference parameters are abnormal, the fixture fault needs to be investigated, and after the fault is eliminated, the reference monitoring is repeated until the reference parameters meet the test requirements, so as to avoid misjudgment of test results due to abnormal reference parameters.

[0009] Preferably, in step four, applying ultra-high voltage and determining product qualification: After the benchmark parameters are monitored and found to be qualified, ultra-high voltage is applied to the product in the fixture according to the test voltage parameters and voltage rise rate of S103, while the change trend of the rise voltage and the value change of the leakage current are monitored in real time. If the product can withstand the set ultra-high voltage and maintain it for the preset time, and the leakage current is always stable within the preset standard range without any abnormal phenomena, the product is judged to be qualified. If, during the test, the leakage current exceeds the standard range, the rise voltage fluctuates abnormally, or the product breaks down or is damaged, the high-voltage power supply is immediately cut off, and the abnormal data is recorded, including the voltage value, leakage current value, and time point when the abnormality occurs. The product is judged to be unqualified, and the unqualified product is sent to a dedicated recycling station for subsequent fault analysis and process optimization.

[0010] Compared with the prior art, the present invention provides an ultra-high voltage testing method for semiconductor product manufacturing, which has the following beneficial effects: 1. This ultra-high voltage testing method for semiconductor product manufacturing, through the design of special insulating materials or fixtures, can effectively improve the product stability of new energy semiconductor products during the high voltage resistance testing and packaging process.

[0011] 2. The ultra-high voltage testing method for this semiconductor product. Modern semiconductor product packaging and implantation methods often use automated production lines, which can greatly improve production efficiency and reduce labor costs. By selecting appropriate packaging materials and processes, material costs and production costs can be reduced while ensuring product quality. Precise packaging processes and strict quality control can effectively reduce scrap rates and improve product qualification rates, thereby reducing production costs. Attached Figure Description

[0012] Figure 1 This is a flowchart illustrating the steps of the ultra-high voltage testing method of the present invention. Detailed Implementation

[0013] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0014] (II) Technical Solution To achieve the above objectives, the present invention provides the following technical solution: a method for testing ultra-high voltage power transmission in semiconductor product manufacturing, comprising a pretreatment stage, a testing stage, a post-processing stage, and material selection, the specific steps of which are as follows: S101. The product is delivered into a specific fixture; S102, Specific fixture pressing; S103. High voltage test is performed using a high voltage power supply; S104. Monitor the ramp-up voltage and leakage current to determine whether the product is qualified.

[0015] Furthermore, the pre-processing stage includes feeding the product into a specific fixture. This process involves using a specific semiconductor product for ultra-high voltage testing, monitoring the ramp-up voltage and leakage current, and forming a complete semiconductor device. Specifically, this includes feeding to closure, applying ultra-high voltage, monitoring the ramp-up voltage and leakage current, and determining whether the product is qualified. The detailed steps are as follows: Step 1: Feeding material into a specific fixture: Apply ultra-high voltage to the product using a specific fixture, monitor the creep voltage and leakage current, and determine whether the product is qualified; Step 2, Specific Fixture: The product is subjected to an ultra-high voltage test using a specific fixture; Step 3: Monitor current and voltage: Monitor the ramp-up voltage and leakage current. If the leakage current of the product is within the standard range after being subjected to the set ultra-high voltage, it is determined whether it is qualified.

[0016] Example 1: A method for testing ultra-high voltage power transmission in semiconductor product manufacturing includes a pretreatment stage, a testing stage, a post-processing stage, and a material selection stage. The specific steps are as follows: S101. The product is delivered into a specific fixture; S102, Specific fixture pressing; S103. High voltage test is performed using a high voltage power supply; S104. Monitor the ramp-up voltage and leakage current to determine whether the product is qualified.

[0017] The pre-processing stage includes feeding the product into a specific fixture. This involves using a specific semiconductor product for ultra-high voltage testing, monitoring the ramp-up voltage and leakage current, and forming a complete semiconductor device. The specific steps include feeding to closure, applying ultra-high voltage, monitoring the ramp-up voltage and leakage current, and determining product qualification. The detailed steps are as follows: Step 1: Feeding material into a specific fixture: Apply ultra-high voltage to the product using a specific fixture, monitor the creep voltage and leakage current, and determine whether the product is qualified; Step 2, Specific Fixture: The product is subjected to an ultra-high voltage test using a specific fixture; Step 3: Monitor current and voltage: Monitor the ramp-up voltage and leakage current. If the leakage current of the product is within the standard range after being subjected to the set ultra-high voltage, it is determined whether it is qualified.

[0018] Example 2: Feeding to a specific fixture: First, the specific fixture is pre-treated by checking the wear and conductivity of the probes inside the fixture, and cleaning the oxide layer and stains on the probe surface to ensure that the probes are intact and have good conductivity. Then, the semiconductor product to be tested is accurately fed into the testing station of the fixture by an automated feeding mechanism according to the product positioning mark, ensuring that the test contacts of the product correspond one-to-one with the fixture probes, and the positioning deviation does not exceed 0.1mm. After feeding, the fixture positioning detection module is activated to verify the product positioning accuracy. If the positioning deviation exceeds the allowable range, an alarm signal is immediately issued, subsequent operations are stopped, the product position is manually adjusted and repositioned until the requirements are met.

[0019] Example 3: Specific fixture debugging and closure: After the product positioning is qualified, the specific fixture is debugged by setting parameters such as pressing pressure and pressing time to ensure that the parameters match the specifications of the product to be tested. After debugging, the fixture closure procedure is started. The upper mold of the fixture slowly descends and presses smoothly to the preset pressure and then remains stable. At the same time, the contact resistance after the fixture is closed is monitored. If the contact resistance exceeds 10mΩ, it is necessary to re-press or adjust the probe position until the contact resistance meets the requirements. At this time, the fixture is in the test state, ready for the subsequent application of ultra-high voltage. After the fixture is closed, it must be kept in a sealed state to prevent external interference from affecting the test results during the test.

[0020] Example 4: Monitoring reference current and voltage: Before applying ultra-high voltage, start the monitoring system to monitor the reference parameters of the fixture and product, including the reference voltage of the fixture probe and the no-load leakage current. If the reference parameters are abnormal, the fixture fault must be investigated. After the fault is eliminated, the reference monitoring is repeated until the reference parameters meet the test requirements to avoid misjudgment of test results due to abnormal reference parameters. Applying ultra-high voltage and determining product qualification: After the baseline parameters are monitored and found to be qualified, ultra-high voltage is applied to the product in the fixture according to the test voltage parameters and voltage rise rate of S103. At the same time, the change trend of the rise voltage and the value change of the leakage current are monitored in real time. If the product can withstand the set ultra-high voltage and maintain it for the preset time, and the leakage current is always stable within the preset standard range without any abnormal phenomena, the product is judged to be qualified. If, during the test, the leakage current exceeds the standard range, the rise voltage fluctuates abnormally, or the product breaks down or is damaged, the high-voltage power supply is immediately cut off, and the abnormal data is recorded, including the voltage value, leakage current value, and time point when the abnormality occurs. The product is judged to be unqualified and the unqualified product is sent to a dedicated recycling station for subsequent fault analysis and process optimization.

[0021] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A method for testing ultra-high voltage power transmission in semiconductor product manufacturing, characterized in that: The process includes pretreatment, testing, post-treatment, and material selection. The specific steps are as follows: S101. The product is delivered into a specific fixture; S102, Specific fixture pressing; S103. High voltage test is performed using a high voltage power supply; S104. Monitor the ramp-up voltage and leakage current to determine whether the product is qualified.

2. The ultra-high voltage testing method for semiconductor product manufacturing according to claim 1, characterized in that: The pre-processing stage includes feeding the product into a specific fixture. This process involves using a specific semiconductor product for ultra-high voltage testing, monitoring the ramp-up voltage and leakage current, and forming a complete semiconductor device. Specifically, this includes feeding to closure, applying ultra-high voltage, monitoring the ramp-up voltage and leakage current, and determining whether the product is qualified. The detailed steps are as follows: Step 1: Feeding material into a specific fixture: Apply ultra-high voltage to the product using a specific fixture, monitor the creep voltage and leakage current, and determine whether the product is qualified; Step 2, Specific Fixture: The product is subjected to an ultra-high voltage test using a specific fixture; Step 3: Monitor current and voltage: Monitor the ramp-up voltage and leakage current. If the leakage current of the product is within the standard range after being subjected to the set ultra-high voltage, it is determined whether it is qualified.

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