Thermal shock test method and thermal shock test device

Abstract

The application provides a temperature difference impact test method and a temperature difference impact test device. A preset low-temperature first pretreatment chamber is constructed by using a low-temperature liquid medium; a preset high-temperature second pretreatment chamber is constructed; a packaged chip is cooled, and the cooling step comprises: placing the packaged chip in the preset low-temperature first pretreatment chamber for a first set time length; after the cooling step is completed, the packaged chip is heated, and the heating step comprises: transferring the packaged chip to the preset high-temperature second pretreatment chamber and placing the packaged chip in the preset high-temperature second pretreatment chamber for a second set time length; and after the heating step is completed, the packaged chip is tested. The packaged chip is cooled and heated in different chambers, and the packaged chip is cooled and heated in the chambers with a good temperature, so that the packaged chip is quickly cooled and heated, the temperature change rate is improved, and a more real extreme temperature difference impact working condition is simulated.

Description

Technical Field

[0001] This invention relates to the field of semiconductor testing technology, and in particular to a thermal shock testing method and a thermal shock testing device. Background Technology

[0002] Existing technologies for high and low temperature testing of semiconductor devices primarily rely on high and low temperature probe stations. These probe stations typically employ a single-chamber design, using built-in heaters and coolers to regulate the temperature of the air and stage within the chamber. The existing process for high and low temperature testing of semiconductor devices involves: first, lowering the single chamber from room temperature to the target low temperature using the probe station's cooling system; then, conducting a temperature hold test on the semiconductor device at this low temperature; finally, activating the probe station's heating system to raise the single chamber from the low temperature to the target high temperature; and finally, conducting a temperature hold test on the semiconductor device at the target high temperature.

[0003] However, due to the large cavity space and stage space of the high and low temperature probe station, it is difficult and time-consuming to lower the temperature of the cavity space and stage space of the high and low temperature probe station to low temperatures during the high and low temperature testing of semiconductor devices. The slow temperature change is difficult to simulate the temperature change environment of integrated chip circuits in actual temperature change environments. As a result, the high and low temperature test results of semiconductor devices are not very reliable and correlated with the performance changes of semiconductor devices under real operating conditions. Summary of the Invention

[0004] This invention provides a method and apparatus for thermal shock testing. By cooling and heating the packaged chip in different chambers, and by cooling and heating the packaged chip in a chamber with a pre-constructed temperature to increase the rate of temperature change of the packaged chip, the thermal shock experienced by the packaged chip under real working conditions is simulated.

[0005] According to a first aspect of the present invention, the present invention provides a method for thermal shock testing, comprising: A pre-designed low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium; Construct a pre-designed high-temperature second pretreatment chamber; Cooling the packaged chip, the cooling step includes: placing the packaged chip in the preset low temperature first pretreatment chamber for a first set time; After completing the cooling step, the packaged chip is heated. The heating step includes: transferring the packaged chip to the preset high temperature second pre-processing chamber and placing it in the preset high temperature second pre-processing chamber for a second set time. After the heating step is completed, the packaged chip is tested.

[0006] Optionally, a pre-defined low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium, including: using at least one of liquid nitrogen or anhydrous ethanol as the low-temperature liquid medium to construct the pre-defined low-temperature first pretreatment chamber.

[0007] Optionally, the temperature range of the preset low-temperature first pretreatment chamber is -200℃ to -110℃.

[0008] Optionally, the first set duration is 5 to 15 minutes.

[0009] Optionally, the time range for transferring the packaged chip to the preset high-temperature second pretreatment chamber via the transfer structure is less than or equal to 5 seconds.

[0010] Optionally, the method for constructing the preset high-temperature second pretreatment chamber is to construct the preset high-temperature second pretreatment chamber using a heating plate or heating table.

[0011] Optionally, the temperature range of the preset high-temperature second pretreatment chamber is 295℃~305℃.

[0012] Optionally, the first set duration is 5 to 15 minutes, and the second set duration is 5 to 15 minutes.

[0013] Optionally, after the heating step and before testing the packaged chip, the packaged chip is transferred to room temperature for natural cooling.

[0014] According to a second aspect of the present invention, the present invention also provides a temperature difference shock testing apparatus, including the temperature difference shock testing method as described above.

[0015] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects: In the temperature shock testing method and apparatus of the present invention, a preset low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium; a preset high-temperature second pretreatment chamber is constructed; the packaged chip is cooled down, the cooling step including: placing the packaged chip in the preset low-temperature first pretreatment chamber for a first set time; after completing the cooling step, the packaged chip is heated up, the heating step including: transferring the packaged chip to the preset high-temperature second pretreatment chamber and placing it in the preset high-temperature second pretreatment chamber for a second set time; after completing the heating step, the packaged chip is tested. This method achieves rapid cooling and heating of packaged chips by cooling and heating them in different chambers, and by cooling and heating them in chambers with pre-defined temperatures. Compared to the traditional slow heating and cooling methods in a single chamber, this method increases the rate of temperature change and can effectively induce real thermomechanical stress inside the device. In addition, using a low-temperature liquid medium to cool the packaged chip facilitates rapid cooling. As a result, the temperature shock test of the packaged chip is closer to the extreme temperature shock conditions actually encountered in aerospace, automotive electronics and other fields. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic flowchart of a temperature difference shock test method according to an embodiment of the present invention. Detailed Implementation

[0018] As mentioned in the background art, the present invention aims to solve the technical problem of slow temperature change in the temperature shock test of packaged chips in the prior art.

[0019] In view of this, the present invention proposes a temperature shock testing method, which involves constructing a preset low-temperature first pretreatment chamber using a low-temperature liquid medium; constructing a preset high-temperature second pretreatment chamber; cooling the packaged chip, the cooling step including: placing the packaged chip in the preset low-temperature first pretreatment chamber for a first set time; after completing the cooling step, heating the packaged chip, the heating step including: transferring the packaged chip to the preset high-temperature second pretreatment chamber and placing it in the preset high-temperature second pretreatment chamber for a second set time; and after completing the heating step, testing the packaged chip. This method achieves rapid cooling and heating of packaged chips by cooling and heating them in different chambers, and by cooling and heating them in chambers with pre-defined temperatures. Compared to the traditional slow heating and cooling methods in a single chamber, this method increases the rate of temperature change and can effectively induce real thermomechanical stress inside the device. In addition, using a low-temperature liquid medium to cool the packaged chip facilitates rapid cooling. As a result, the temperature shock test of the packaged chip is closer to the extreme temperature shock conditions actually encountered in aerospace, automotive electronics and other fields.

[0020] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0021] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0022] Please refer to Figure 1 The embodiments of the present invention provide a method for thermal shock testing, which may include: S100: A pre-designed low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium; S200: Construct a pre-designed high-temperature second pretreatment chamber; S300: Cooling the packaged chip, the cooling step including: placing the packaged chip in the preset low temperature first pretreatment chamber for a first set time; S400: After completing the cooling step, the packaged chip is heated. The heating step includes: transferring the packaged chip to the preset high temperature second pre-processing chamber and placing it in the preset high temperature second pre-processing chamber for a second set time. S500: After completing the heating step, the packaged chip is tested.

[0023] As an example, steps S300 to S500 can be repeated to conduct multiple temperature shock cycle experiments.

[0024] As an example, testing a packaged chip may include testing key electrical parameters of the packaged chip to assess its performance degradation. Specifically, electrical parameters may include either threshold voltage or leakage current.

[0025] As can be seen, this invention achieves rapid cooling and heating of the packaged chip by cooling and heating it in different chambers, and by cooling and heating it in a chamber with a pre-constructed temperature, which improves the temperature change rate compared to the traditional slow heating and cooling method of a single chamber. This effectively induces real thermomechanical stress inside the device. In addition, using a low-temperature liquid medium to cool the packaged chip facilitates rapid cooling. As a result, the temperature difference shock test of the packaged chip is closer to the extreme temperature difference shock conditions actually encountered in aerospace, automotive electronics and other fields.

[0026] As an optional implementation, a predetermined low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium, including: using at least one of liquid nitrogen or anhydrous ethanol as the low-temperature liquid medium to construct the predetermined low-temperature first pretreatment chamber.

[0027] As one specific implementation, the temperature range of the preset low-temperature first pretreatment chamber is -200℃ to -110℃.

[0028] In this embodiment, compared to the prior art's method of using air cooling to lower the temperature to -40℃ to -70℃, the present invention uses a pre-constructed low-temperature first pre-treatment chamber constructed with a low-temperature liquid medium to lower the temperature of the packaged chip. That is, the packaged chip is immersed in the low-temperature liquid medium for cooling, which can lower the temperature of the packaged chip to the range of -200℃ to -110℃. It can be seen that the pre-constructed low-temperature first pre-treatment chamber constructed with a low-temperature liquid medium can cool the packaged chip rapidly and has a lower temperature threshold.

[0029] As one specific implementation method, the first set duration is 5 to 15 minutes.

[0030] In this embodiment, placing the packaged chip in a preset low-temperature first pretreatment chamber for 5 to 15 minutes ensures that the packaged chip is fully cooled from the inside out.

[0031] As a specific embodiment, the time range for transferring the packaged chip to the preset high-temperature second pre-processing chamber via the transfer structure is less than or equal to 5 seconds.

[0032] In this embodiment, the transfer time is set to less than 5 seconds. This rapid transfer process enables the packaged chip to heat up quickly, with a heating rate greater than or equal to 100°C / s.

[0033] In this embodiment, the transfer structure can be, for example, a robotic arm, to transfer the packaged chip from a preset low-temperature first pre-processing chamber to a preset high-temperature second pre-processing chamber. The transfer structure can also be a linear motor-driven mobile platform, a pneumatic gripper, or a rotating tray, or other automated structures.

[0034] In one specific embodiment, the method for constructing the preset high-temperature second pretreatment chamber is as follows: the preset high-temperature second pretreatment chamber is constructed by means of a heating plate or a heating table.

[0035] In this embodiment, the method for constructing the preset high-temperature second pretreatment chamber can also be: constructing the preset high-temperature second pretreatment chamber by infrared radiation heating.

[0036] In this embodiment, after the packaged chip enters the preset high-temperature second pre-processing chamber, a heating plate and a heating stage can be used to continuously heat the packaged chip.

[0037] As an optional implementation, the second set duration is 5 to 15 minutes.

[0038] In this embodiment, placing the packaged chip in a preset high-temperature second pre-processing chamber for 5 to 15 minutes ensures that the packaged chip is fully heated from the inside out, allowing the packaged chip to reach a high-temperature thermal equilibrium.

[0039] In summary, this invention employs a low-temperature liquid medium to construct a preset low-temperature first pretreatment chamber; constructs a preset high-temperature second pretreatment chamber; cools the packaged chip, the cooling step including: placing the packaged chip in the preset low-temperature first pretreatment chamber for a first set time; after completing the cooling step, heats the packaged chip, the heating step including: transferring the packaged chip to the preset high-temperature second pretreatment chamber and placing it in the preset high-temperature second pretreatment chamber for a second set time; after completing the heating step, tests the packaged chip. This method achieves rapid cooling and heating of packaged chips by cooling and heating them in different chambers, and by cooling and heating them in chambers with pre-defined temperatures. Compared to the traditional slow heating and cooling methods in a single chamber, this method increases the rate of temperature change and can effectively induce real thermomechanical stress inside the device. In addition, using a low-temperature liquid medium to cool the packaged chip facilitates rapid cooling. As a result, the temperature shock test of the packaged chip is closer to the extreme temperature shock conditions actually encountered in aerospace, automotive electronics and other fields.

[0040] Accordingly, the present invention also provides a temperature difference shock testing device, including the temperature difference shock testing method as described above.

[0041] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for testing temperature difference shock, characterized in that, include: A pre-designed low-temperature first pretreatment chamber is constructed using a low-temperature liquid medium; Construct a pre-designed high-temperature second pretreatment chamber; Cooling the packaged chip, the cooling step includes: placing the packaged chip in the preset low temperature first pretreatment chamber for a first set time; After completing the cooling step, the packaged chip is heated. The heating step includes: transferring the packaged chip to the preset high temperature second pre-processing chamber and placing it in the preset high temperature second pre-processing chamber for a second set time. After the heating step is completed, the packaged chip is tested.

2. The temperature difference shock test method as described in claim 1, characterized in that, Constructing a pre-defined low-temperature first pretreatment chamber using a low-temperature liquid medium includes: using at least one of liquid nitrogen or anhydrous ethanol as the low-temperature liquid medium to construct the pre-defined low-temperature first pretreatment chamber.

3. The temperature difference shock test method as described in claim 2, characterized in that, The temperature range of the preset low-temperature first pretreatment chamber is -200℃ to -110℃.

4. The temperature difference shock test method as described in claim 1, characterized in that, The first set duration is 5 to 15 minutes.

5. The temperature difference shock test method as described in claim 1, characterized in that, The time range for transferring the packaged chip to the preset high-temperature second pretreatment chamber via the transfer structure is less than or equal to 5 seconds.

6. The temperature difference shock test method as described in claim 1, characterized in that, The method for constructing the preset high-temperature second pretreatment chamber is as follows: a heating plate or heating table is used to construct the preset high-temperature second pretreatment chamber.

7. The temperature difference shock test method as described in claim 1, characterized in that, The temperature range of the preset high-temperature second pretreatment chamber is 295℃~305℃.

8. The temperature difference shock test method as described in claim 1, characterized in that, The first set duration is 5 to 15 minutes, and the second set duration is 5 to 15 minutes.

9. The temperature difference shock test method as described in claim 1, characterized in that, After the heating step and before testing the packaged chip, the packaged chip is transferred to room temperature for natural cooling.

10. A temperature difference shock testing device, characterized in that, Used to implement the thermal shock test method as described in any one of claims 1-9.

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