A reticle and a lithographic apparatus

Abstract

The application relates to the technical field of semiconductors, and provides a photomask and a photolithography device. The photomask comprises a substrate, a frame, a pattern area and a protective film. The frame is fixedly arranged on the substrate and has a hollow annular structure. A mounting hole is formed in the middle of the side of the frame away from the substrate. The pattern area is located on the inner side of the frame and arranged on the surface of the substrate. The protective film comprises a peripheral area and a working area. The peripheral area is arranged around the outer periphery of the working area. The peripheral area is fixedly bonded to the peripheral edge of the frame with the mounting hole. The thickness of the peripheral area at any position is not less than the thickness of the working area. The thickness of the peripheral area gradually increases along the radial direction of the protective film. The radial direction of the protective film is the direction from the center of the protective film to the edge of the protective film. The photomask and the photolithography device provided by the application can balance the light transmittance and the structural strength of the protective film.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a photomask and photolithography equipment. Background Technology

[0002] The mask contains a pattern design, similar to a photographic film. The pattern is transferred to the wafer using photolithography. A thin film is placed on top of the pattern to reduce dust and other particles falling onto it. The thin film is usually bonded to the frame. During photolithography, the mask vibrates at high speed inside the photolithography equipment, which increases the stress at the connection between the frame and the thin film, eventually causing the thin film to crack.

[0003] In related technologies, the structural strength is improved by thickening the protective film as a whole or by adding some special materials during the preparation of the protective film. However, these measures will affect the light transmittance of the protective film, making it impossible for the protective film to balance structural strength and light transmittance. Summary of the Invention

[0004] This application provides a photomask and a photolithography device, the protective film of which can balance light transmittance and structural strength.

[0005] The technical solution of this application embodiment is implemented as follows: One embodiment of this application provides a photomask, including: substrate; A frame is fixedly mounted on the substrate. The frame has a hollow ring structure and a through mounting opening is formed in the middle of the side of the frame away from the substrate. A patterned area is located inside the frame and is disposed on the surface of the substrate; A protective film includes a peripheral area and a working area. The peripheral area is disposed around the outer periphery of the working area and is fixedly adhered to the periphery of the frame having the mounting opening. The thickness of the peripheral area at any position is not less than the thickness of the working area, and the thickness of the peripheral area gradually increases along the radial direction of the protective film, wherein the radial direction of the protective film is the direction from the center of the protective film to the edge of the protective film.

[0006] In one embodiment, the projection along the thickness direction of the protective film shows that a portion of the projection area of ​​the peripheral region lies within the projection outline of the frame.

[0007] In one embodiment, the projection along the thickness direction of the protective film shows that the outer projection contour of the peripheral region coincides with the outer projection contour of the frame.

[0008] In one embodiment, the ratio of the width dimension of the frame to the width dimension of the peripheral region along the radial direction of the protective film is between 0.2 and 0.9.

[0009] In one embodiment, the width of the peripheral region is between 2 mm and 4 mm.

[0010] In one embodiment, the thickness of the outer region at the contact point with the inner side of the frame is not less than 1000 mm; and / or, The dimension between the working area along the radial direction of the protective film and the inner side of the frame is no greater than 1 mm.

[0011] In one embodiment, the side of the peripheral region near the substrate and the side of the working region near the substrate are coplanar.

[0012] In one embodiment, the working area is arranged parallel to both sides along the thickness direction of the protective film.

[0013] In one embodiment, the side of the frame away from the substrate is in surface contact with the side of the peripheral region near the substrate.

[0014] Another aspect of this application provides a photolithography apparatus, including a photomask as described in any of the above embodiments.

[0015] This application provides a photomask and a photolithography apparatus. By dividing the protective film into an outer region and a working region, the outer region is disposed around the periphery of the working region and is fixedly bonded to the periphery of the frame with a mounting opening. This allows the stress generated by high-speed vibration between the frame and the protective film to be concentrated in the outer region. The thickness of the outer region gradually increases radially along the protective film; that is, the thickness of the outer region is thicker closer to the frame and thinner closer to the working region. Furthermore, the thickness of the outer region at any point is not less than the thickness of the working region. This improves the structural strength of the protective film near the frame, reducing the stress peak at that location and thus reducing the risk of cracking and extending the lifespan of the protective film. Additionally, the gradual increase in thickness radially along the outer region reduces stress concentration points on the protective film, further reducing the risk of breakage. Moreover, the thickness of the working region is no greater than the thickness of the outer region, and the outer region surrounds the working region, minimizing its impact on the light transmittance of the working region. In other words, the protective film provided in this application divides its functions: the working area in the middle is used for the exposure beam to pass through and act on the pattern area, while the outer peripheral area is used to enhance structural strength and reduce cracking, so that the protective film can balance structural strength and light transmittance. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a photomask provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a protective film provided in another embodiment of this application; Figure 3 This is a partial structural schematic diagram of a protective film and frame provided in another embodiment of this application.

[0017] Explanation of reference numerals in the attached figures 100. Photomask; 1. Substrate; 2. Frame; 2a. Mounting port; 2b. Outer side of frame; 2c. Fourth surface; 3. Pattern area; 4. Protective film; 41. Peripheral area; 41a. Outer side of peripheral area; 41b. First surface; 42. Working area; 42a. Second surface; 42b. Third surface. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification and the foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0020] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0021] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. The terms "first," "second," etc., used in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly including at least one feature.

[0022] In related technologies, the stress concentration problem between the protective film and the frame is often addressed by thickening the protective film as a whole or by adding special materials during the manufacturing process to improve the structural strength. However, this will affect the light transmittance of the protective film.

[0023] In view of this, this application provides a photomask 100 and a photolithography apparatus. In order to better understand the photomask 100 provided in this application, the photolithography apparatus will be described first.

[0024] One embodiment of this application provides a photolithography apparatus, including a photomask 100 in any of the following embodiments.

[0025] For example, lithography equipment can be a UV (ultraviolet) lithography machine, a DUV (deep ultraviolet) lithography machine, or an EUV (extreme ultraviolet) lithography machine, etc.

[0026] For example, a photolithography apparatus may include a housing and a light source system. The photomask 100 and the light source system may be disposed inside the housing. The wafer may be disposed below the photomask 100. The exposure beam emitted by the light source system can be shaped and then pass through the photomask 100, and then be projected onto the photoresist on the wafer surface for exposure through a multi-stage lens.

[0027] Another embodiment of this application provides a photomask 100, please refer to... Figures 1 to 3 The photomask 100 includes a substrate 1, a frame 2, a patterned area 3, and a protective film 4. The frame 2 is fixedly disposed on the substrate 1 and has a hollow annular structure. A through mounting opening 2a is formed in the middle of the side of the frame 2 facing away from the substrate 1. The patterned area 3 is located inside the frame 2 and disposed on the surface of the substrate 1. The protective film 4 includes a peripheral area 41 and a working area 42. The peripheral area 41 is disposed around the outer periphery of the working area 42 and is fixedly bonded to the periphery of the frame 2 with the mounting opening 2a. The thickness of the peripheral area 41 at any position is not less than the thickness of the working area 42, and the thickness of the peripheral area 41 gradually increases along the radial direction of the protective film 4, wherein the radial direction of the protective film 4 is the direction from the center of the protective film 4 to the edge of the protective film 4.

[0028] Substrate 1 refers to the structure used to support the pattern area 3 and to provide support for the frame 2 and the protective film 4. For example, the substrate 1 can be made of a transparent material, such as quartz glass, so that the exposure beam emitted by the light source system can pass through the substrate and act on the photoresist on the wafer surface.

[0029] Pattern area 3 refers to the design pattern of photolithography; pattern area 3 can be made of opaque material so that the exposure beam can be absorbed when it passes through its surface, while the blank areas in pattern area 3 allow the exposure beam to pass through.

[0030] Frame 2 refers to the structure used to support the protective film 4. For example, the shape of frame 2 is not limited; for instance, frame 2 can be a hollow ring-shaped cuboid or cube, etc. Frame 2 can be made of an opaque material.

[0031] The frame 2 having a through mounting opening 2a in the middle of the side facing away from the substrate 1 means that the mounting opening 2a is located in the middle of the side of the frame 2 facing away from the substrate 1. For example, the frame 2 can be fixed to the surface of the substrate 1 by means of adhesive bonding.

[0032] The protective film 4 refers to a membrane structure capable of intercepting particulate impurities such as dust, thereby reducing the amount of particulate impurities falling from the mounting port 2a onto the patterned area 3. For example, the shape of the protective film 4 is not limited; for instance, it can be... Figure 2 The rectangular area shown has an outer square ring 41 and a rectangular working area 42. Of course, the protective film 4 can also be square or other shapes. The protective film 4 can be made of a light-transmitting material, such as fluorinated resin, so that the exposure beam can pass directly through the protective film 4 to reach the pattern area 3.

[0033] The peripheral area 41 refers to the structure used to connect the working area 42 to the frame 2. For example, the protective film 4 can be disposed on the frame 2 in any way; for instance, the peripheral area 41 can be adhered to the periphery of the frame 2 having the mounting opening 2a using adhesive or the like.

[0034] The working area 42 refers to the structure through which the exposure beam can pass and act on the entire pattern area 3.

[0035] The thickness of the outer region 41 at any position is not less than the thickness of the working region 42, and the thickness of the outer region 41 gradually increases along the radial direction of the protective film 4, which means that the thickness of the outer region 41 gradually increases along the radial direction of the protective film 4, that is, it is set in a gradual manner, and then it is connected to the working region 42 at the point of minimum thickness. In this way, the stress concentration points can be reduced.

[0036] For example, the preparation method of the protective film 4 with varying thickness is not limited. For instance, it can be prepared by a gradient spin coating process, that is, by adjusting the gradient change of the spin coating speed, the film liquid is made to accumulate thicker in the edge area and thinner in the center area, and then cured to form the target thickness distribution. Of course, a combination of chemical vapor deposition and mask ashing thinning can be used to achieve the varying thickness, which is not limited here.

[0037] It should be noted that the outer area 41 and the working area 42 do not refer to a planar area on the surface of the protective film 4, but rather to two structural parts of the protective film 4.

[0038] The photomask 100 provided in this application divides the protective film 4 into an outer region 41 and a working region 42. The outer region 41 is arranged around the outer periphery of the working region 42 and is fixedly bonded to the periphery of the frame 2 with the mounting opening 2a. This allows the stress generated by the frame 2 and the protective film 4 during high-speed vibration to be concentrated in the outer region 41. Furthermore, since the thickness of the outer region 41 gradually increases radially along the protective film 4, that is, the closer to the frame 2, the thicker the outer region 41 is, and the closer to the working region 42, the thinner the outer region 41 is, and the thickness of the outer region 41 at any position is not less than the thickness of the working region 42, thus, on the one hand... On the one hand, the thickness of the outer region 41 gradually increases along the radial direction of the protective film 4, which reduces the stress peak at that location, thereby reducing the occurrence of cracks and extending the service life of the protective film 4. On the other hand, since the thickness of the outer region 41 gradually increases along the radial direction of the protective film 4, the stress concentration points on the protective film 4 can be reduced, thereby further reducing the risk of the protective film 4 breaking. Furthermore, the thickness of the working area 42 is no greater than the thickness of the outer region 41, and the outer region 41 surrounds the outer perimeter of the working area 42, which reduces the impact of the outer region 41 on the light transmittance of the working area 42 and improves the working stability of the working area 42. In other words, the protective film 4 provided in this application divides its functions. The working area 42 in the middle is used for the exposure beam to pass through and act on the pattern area 3, while the outer peripheral area 41 is used to enhance the structural strength and reduce the occurrence of cracks. Compared with thickening the entire protective film, the protective film 4 provided in this application is not only lighter, but also has a smaller overall deformation range. In this way, the damage to the protective film 4 and the difference in light transmission can be effectively reduced, so that the protective film 4 can take into account both structural strength and light transmittance.

[0039] The photolithography equipment provided in this application, based on the advantages of the aforementioned photomask 100, has the characteristics of long service life and high wafer production yield.

[0040] For example, Figure 1 In this context, R1 can be the radial direction of the protective film 4, and R2 can be the thickness direction of the protective film 4.

[0041] In one embodiment, the projection of the outer region 41 along the thickness direction of the protective film 4 is partially within the projection outline of the frame 2.

[0042] In other words, a portion of the peripheral area 41 provided in this application protrudes from the frame 2 and is located within the frame 2 in a direction close to the working area 42.

[0043] This design also thickens the protective film 4 at its connection with the inner side of the frame 2. This reduces the likelihood of the protective film 4 cracking inside the frame 2, which could affect the light transmittance of the working area 42 and prevent dust and other particulate impurities from entering through the mounting port 2a. This improves the working stability of the protective film 4.

[0044] In one embodiment, the projection along the thickness direction of the protective film 4 shows that the outer projection contour of the peripheral region 41 coincides with the outer projection contour of the frame 2.

[0045] In other words, the outer surface 41a of the outer perimeter region and the outer surface 2b of the frame are flush along the thickness direction of the protective film 4, without forming a step between them. The inner side of the outer perimeter region 41 extends into the mounting opening 2a, which strengthens the structural strength of the protective film 4 inside the frame 2 and reduces the risk of edge cracking. This increases the contact area between the outer perimeter region 41 and the frame 2, thereby improving the load-bearing stability of the protective film 4 and reducing the likelihood of it swaying.

[0046] In one embodiment, please refer to Figure 1 Along the radial direction of the protective film 4, the ratio of the width dimension L1 of the frame 2 to the width dimension L2 of the outer region 41 is between 0.2 and 0.9.

[0047] For example, the ratio of L1 to L2 can be 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, etc.

[0048] It should be noted that, as Figure 1 Here, the radial width dimension L1 of the frame 2 along the protective film 4 and the radial width dimension L2 of the outer region 41 along the protective film 4 both refer to the dimensions of one side.

[0049] In other words, along the radial direction of the protective film 4, the width dimension L2 of the outer region 41 is greater than the width dimension L1 of the frame 2.

[0050] In this way, by setting an appropriate ratio, on the one hand, a larger thickened area can be left between the working area 42 and the inner side of the frame 2 to reduce the risk of cracking; on the other hand, the outer area 41 can minimize its impact on the light transmittance of the working area 42, thereby improving the working stability of the working area 42; and on the other hand, the protective film 4 can be kept at a certain weight, so as to reduce the manufacturing cost of the protective film 4 to a certain extent, thus achieving both economy and lightweight.

[0051] In one embodiment, please refer to Figure 1 The width dimension L2 of the outer region 41 is between 2mm and 4mm.

[0052] For example, the width L2 of the outer region 41 can be 2mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm, or 4mm, etc.

[0053] Here, by setting a suitable width dimension L2 of the outer perimeter 41, the protective film 4 can be thickened over a larger area. This not only improves the structural strength of the protective film 4 and reduces the likelihood of it breaking, but also reduces the impact of the outer perimeter 41 on the light transmittance of the working area 42, allowing the protective film 4 to balance structural strength and light transmittance.

[0054] In one embodiment, along the projection of the exposure beam, the projection area of ​​the pattern area 3 is located within the projection area of ​​the working area 42.

[0055] This allows the exposure beam to act on the entire pattern area 3 through the working area 42, thereby improving the wafer processing yield.

[0056] In one embodiment, please refer to Figure 1 The outer region 41 is coplanar with the side of the substrate 1 and the working region 42 is coplanar with the side of the substrate 1.

[0057] For example, the peripheral area 41 along the thickness direction of the protective film 4 and the side of the substrate 1 can be a first surface 41b, and the working area 42 along the thickness direction of the protective film 4 and the side of the substrate 1 can be a second surface 42a. The first surface 41b is fixedly bonded to the periphery of the frame 2 with the mounting opening 2a, and the first surface 41b and the second surface 42a are coplanar.

[0058] For example, the coplanarity of the first surface 41b and the second surface 42a means that both are flat surfaces and lie in the same plane.

[0059] For example, the first surface 41b and the periphery of the mounting port 2a can be bonded and fixed with adhesive.

[0060] Here, by setting the outer perimeter region 41 near the side of the substrate 1 and the working region 42 near the side of the substrate 1 coplanarly, the protective film 4 is a single plane along its thickness direction near the surface of the substrate 1, without forming a step between them. In this way, on the one hand, the stress concentration points of the protective film 4 near the surface of the substrate 1 can be reduced, thereby reducing the occurrence of cracks and improving the working stability of the protective film 4; on the other hand, it can also reduce the accumulation of dirt, thereby reducing the contamination of the pattern area 3 by impurities and the impact on light transmittance.

[0061] In one embodiment, please refer to Figure 1 The working area 42 is arranged parallel to both sides along the thickness direction of the protective film 4.

[0062] For example, the working area 42, which is away from the side of the substrate 1 along the thickness direction of the protective film 4, can be a third surface 42b, which is parallel to the second surface 42a.

[0063] Here, by setting the working area 42 parallel to both sides along the thickness direction of the protective film 4, the thickness of the working area 42 is set to be uniform, that is, the thickness at any position of the working area 42 is the same, with no abrupt changes in thickness. In this way, on the one hand, the uniformity of the light transmittance of the working area 42 can be improved, thereby improving the production yield of the wafer; on the other hand, the stress concentration positions can be reduced, thereby reducing the occurrence of damage and improving the working stability of the protective film 4.

[0064] In some embodiments, please refer to Figure 1 The thickness D2 of the working area 42 can be 280nm.

[0065] In other words, the thickness of the working area 42 at any position D2 is 280mm.

[0066] This design ensures that the working area 42 maintains good light transmittance while also possessing a certain structural strength, enabling it to withstand significant impacts and maintain good operational stability.

[0067] In some embodiments, the thickness of the working area 42 may also be other values ​​to adapt to different process requirements.

[0068] In one embodiment, please refer to Figure 1 The side of the frame 2 away from the substrate 1 is in contact with the side of the peripheral region 41 near the substrate 1.

[0069] For example, the side of the frame 2 away from the substrate 1 along the thickness direction of the protective film 4 can be a fourth surface 2c, and the first surface 41b is in contact with the fourth surface 2c.

[0070] For example, the fourth surface 2c may be perpendicular to the thickness direction of the protective film 4.

[0071] In this way, by having the outer area 41 in contact with the frame 2, not only can the location of stress concentration be reduced, but the contact area between the outer area 41 and the frame 2 can also be increased, making the connection stability between the two better and reducing the possibility of the protective film 4 breaking.

[0072] In one embodiment, please refer to Figure 1 The maximum thickness D1 of the outer region 41 is not less than 1000nm.

[0073] It should be noted that the maximum thickness of the outer region 41 is located at the outermost edge of the protective film 4 along the radial direction.

[0074] It is understandable that the maximum thickness D1 of the outer region 41 is not less than 1000mm means that the thickness D1 can be greater than or equal to 1000mm.

[0075] For example, the maximum thickness D1 of the peripheral region 41 can be 1000nm, 1050nm, 1100nm, 1150nm, 1200nm, 1250nm, 1300nm, 1350nm, 1400nm, 1450nm, 1500nm, 1550nm, 1600nm, 1650nm, 1700nm, 1750nm, 1800nm, 1850nm, 1900nm, 1950nm, or 2000nm, etc.

[0076] Here, by setting an appropriate maximum thickness D1, the structural strength of the outer region 41 can be improved, making the outer region 41 more resistant to tearing and fatigue, and able to withstand the continuous tension brought about by the frame 2 and the protective membrane 4 under high-speed vibration, so as to stably maintain the connection stability between the protective membrane 4 and the frame 2, reduce the stress peak generated under high-speed vibration, thereby reducing the risk of cracking of the protective membrane 4 and improving the service life of the protective membrane 4.

[0077] In some embodiments, the maximum thickness D1 of the peripheral region 41 is 1000 nm, that is, the thickness of the peripheral region 41 along the radial direction of the protective film 4 increases from 280 nm to 1000 nm.

[0078] This not only reduces the processing difficulty of the protective film 4, but also enables the protective film 4 to have high structural strength while reducing manufacturing costs.

[0079] In one embodiment, please refer to Figure 3 The thickness D3 at the contact point between the outer region 41 and the inner side of the frame 2 is not less than 1000mm.

[0080] For example, the contact position between the outer region 41 and the inner side of the frame 2 can be located at the center of the outer region 41 in the radial direction.

[0081] It is understandable that the thickness D3 at the contact point between the outer region 41 and the inner side of the frame 2 is not less than 1000mm means that the thickness D3 can be greater than or equal to 1000mm.

[0082] For example, the thickness D3 of the contact position between the outer region 41 and the inner side of the frame 2 can be 1000nm, 1050nm, 1100nm, 1150nm, 1200nm, 1250nm, 1300nm, 1350nm, 1400nm, 1450nm, 1500nm, 1550nm, 1600nm, 1650nm, 1700nm, 1750nm, 1800nm, 1850nm, 1900nm, 1950nm, or 2000nm, etc.

[0083] It should be noted that the contact position between the outer region 41 and the inner side of the frame 2 is the main stress position where the protective film 4 and the frame 2 are continuously attached. By thickening the contact position between the outer region 41 and the inner side of the frame 2, the cross-sectional area of ​​the protective film 4 at this position can be increased, so that it can better withstand the tensile stress generated by the frame 2 and the protective film 4 under high-speed vibration, reducing the possibility of cracking damage to the protective film 4 at the contact position on the inner side of the frame 2. Moreover, the thickening treatment can improve the rigidity at this position, thereby constraining the edge of the protective film 4 and reducing the occurrence of warping.

[0084] Here, by setting the thickness D3 of the contact position between the outer region 41 and the inner side of the frame 2 to be thicker, the structural strength of the protective film 4 can be improved while reducing the manufacturing difficulty of the protective film 4, making it easier to prepare the protective film 4.

[0085] In one embodiment, please refer to Figure 3 The dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 is not greater than 1 mm.

[0086] It should be noted that the dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 is not greater than 1mm, which means that the portion of the outer area 41 located radially inside the frame 2 is not greater than 1mm.

[0087] The dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 refers to the dimension on one side.

[0088] It is understandable that the dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 is not greater than 1mm, meaning that the dimension L3 can be less than or equal to 1mm.

[0089] For example, the dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 can be 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm or 0.1 mm, etc.

[0090] Here, by setting the dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 to an appropriate value, on the one hand, the space encroachment of the peripheral area 41 on the working area 42 can be reduced, thereby reducing the impact on the exposure beam and light transmittance; on the other hand, the peripheral area 41 can have high structural strength, while the protective film 4 can maintain a certain weight and reduce the manufacturing cost of the protective film 4.

[0091] In some embodiments, please refer to Figure 3 The thickness D3 of the contact position between the outer region 41 and the inner side of the frame 2 is not less than 1000mm, and the dimension L3 between the working area 42 along the radial direction of the protective film 4 and the inner side of the frame 2 is not greater than 1mm.

[0092] In this way, the protective film 4 can balance structural strength and light transmittance.

[0093] In some embodiments, this application provides a photomask 100, see [link to relevant documentation]. Figures 1 to 3The photomask 100 is six inches in size and includes a substrate 1, a frame 2, a pattern area 3, and a protective film 4. The protective film 4 can be rectangular in shape. The frame 2 can be fixed to the surface of the substrate 1 with adhesive. The frame 2 has a through mounting opening 2a in the middle of the side of the protective film 4 away from the substrate 1 along its thickness direction. The pattern area 3 is located inside the frame 2 and is disposed on the surface of the substrate 1. The protective film 4 includes a peripheral area 41 and a working area 42. The peripheral area 41 is disposed around the outer periphery of the working area 42 and can be adhered with adhesive. The frame 2 is attached to the periphery of the mounting opening 2a. Along the radial direction of the protective film 4, the width L2 of the outer region 41 can be 3 mm, and the ratio of the width L1 of the frame 2 to the width L2 of the outer region 41 can be 0.5. The dimension L3 between the working area 42 and the inner surface of the frame 2 along the radial direction of the protective film 4 can be 1 mm. A portion of the projection area of ​​the outer region 41 along the thickness direction of the protective film 4 lies within the projection contour of the frame 2, and the outer projection contour of the outer region 41 and the outer projection contour of the frame 2 are also considered. Overlapping; the outer region 41, along the thickness direction of the protective film 4, is the first surface 41b near the side of the substrate 1, and the working region 42, along the thickness direction of the protective film 4, is the second surface 42a near the side of the substrate 1. The first surface 41b is bonded to the periphery of the frame 2 with the mounting opening 2a and is coplanar with the second surface 42a. The working region 42, along the thickness direction of the protective film 4, is the third surface 42b away from the side of the substrate 1, and the third surface 42b is parallel to the second surface 42a, so that the working region 42 is of uniform thickness. Specifically, the working region 4... The thickness D2 of the frame 2 is 280nm; the side of the frame 2 facing away from the substrate 1 along the thickness direction of the protective film 4 is the fourth surface 2c, and the first surface 41b is in contact with the fourth surface 2c; the thickness at any position of the peripheral region 41 is not less than the thickness of the working region 42, the thickness D3 of the contact position between the peripheral region 41 and the inner side of the frame 2 can be 1000mm, and the maximum thickness of the peripheral region 41 is greater than 1000nm. That is to say, the thickness of the peripheral region 41 gradually increases from 280nm to more than 1000nm along the radial direction of the protective film 4.

[0094] The above embodiments are merely illustrative of the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and all should be covered within the scope of the specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way.

Claims

1. A photomask, characterized in that, include: substrate; A frame is fixedly mounted on the substrate. The frame has a hollow ring structure and a through mounting opening is formed in the middle of the side of the frame away from the substrate. A patterned area is located inside the frame and is disposed on the surface of the substrate; A protective film includes a peripheral area and a working area. The peripheral area is disposed around the outer periphery of the working area and is fixedly adhered to the periphery of the frame having the mounting opening. The thickness of the peripheral area at any position is not less than the thickness of the working area, and the thickness of the peripheral area gradually increases along the radial direction of the protective film, wherein the radial direction of the protective film is the direction from the center of the protective film to the edge of the protective film.

2. The photomask according to claim 1, characterized in that, The projection along the thickness direction of the protective film shows that a portion of the projection area of ​​the peripheral region lies within the projection outline of the frame.

3. The photomask according to claim 2, characterized in that, The projection along the thickness direction of the protective film shows that the outer projection contour of the peripheral region coincides with the outer projection contour of the frame.

4. The photomask according to claim 3, characterized in that, Along the radial direction of the protective film, the ratio of the width dimension of the frame to the width dimension of the peripheral region is between 0.2 and 0.

9.

5. The photomask according to claim 4, characterized in that, The width of the outer perimeter is between 2mm and 4mm.

6. The photomask according to claim 1, characterized in that, The thickness of the outer perimeter region at the contact point with the inner side of the frame is not less than 1000 mm; and / or, The dimension between the working area along the radial direction of the protective film and the inner side of the frame is no greater than 1 mm.

7. The photomask according to claim 1, characterized in that, The outer perimeter region is coplanar with the side of the substrate near the working area near the substrate.

8. The photomask according to claim 7, characterized in that, The working area is arranged parallel to both sides along the thickness direction of the protective film.

9. The photomask according to claim 8, characterized in that, The side of the frame away from the substrate is in contact with the side of the peripheral region near the substrate.

10. A photolithography apparatus, characterized in that, Includes the photomask as described in any one of claims 1 to 9.

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