Ion beam current radio frequency stabilizing source based on feedback control and stabilizing control method thereof

Abstract

This application relates to an ion beam RF voltage regulator based on feedback control and its voltage regulation control method. The RF voltage regulator mainly includes a control module, a power amplification module, a filtering module, a matching module, a feedback module, and a power supply module. The matching module adapts to the capacitive load characteristics of the ion beam device to achieve impedance matching and power transmission over a wide bandwidth. The feedback module collects the voltage signal from the ion beam device and feeds it back to the control module. The control module dynamically adjusts the amplitude of the output RF signal based on the feedback voltage signal, forming a closed-loop control with the feedback module to maintain voltage stability at the ion beam device. This application can achieve continuous voltage stability at the ion beam device, ensuring the power supply reliability of the beam transmission system.

Description

Technical Field

[0001] This application relates to the field of radio frequency source technology, and in particular to an ion beam radio frequency voltage regulator based on feedback control and its voltage regulation control method. Background Technology

[0002] An ion beam is a directed, high-energy particle stream composed of charged ions (usually positive ions), widely used in scientific research, semiconductor processing, materials modification, industrial manufacturing, and medical fields. The beam transport system is the core subsystem of an ion beam or charged ion beam device, responsible for efficiently and accurately transporting ions from the ion source or accelerator to the target location (such as a target, experimental chamber, or application terminal), while maintaining the beam's shape, direction, energy, and focus. The radio frequency voltage regulator, as a key power supply component of the beam transport system, directly determines the beam quality and the overall application effect of the equipment due to the stability of its output voltage.

[0003] In existing technologies, ion beam devices exhibit purely capacitive non-standard load characteristics. Conventional RF power supply systems cannot achieve stable output voltage control over a wide bandwidth for such capacitive loads. The core problem is the lack of a wideband matching design adapted to capacitive loads and the absence of an effective closed-loop dynamic voltage regulation mechanism. When the load impedance changes or the operating frequency band is switched, the output voltage is prone to large fluctuations, making it difficult to meet the high power supply stability requirements of ion beam devices and severely restricting the reliable operation of ion beam equipment.

[0004] Therefore, how to overcome the problem that conventional RF power supply systems cannot achieve stable control of output voltage over a wide frequency band is a problem to be solved in this technical field. Summary of the Invention

[0005] In view of the above-mentioned defects or improvement needs of the existing technology, and in order to solve the problem that conventional radio frequency power supply systems cannot achieve stable output voltage control over a wide frequency range, this application provides an ion beam radio frequency voltage regulator based on feedback control and its voltage regulation control method. It addresses the core problem that capacitive non-standard loads cannot achieve stable output voltage over a wide frequency range, realizes continuous stability of the voltage at the ion beam device end, and ensures the power supply reliability of the beam transmission system.

[0006] The embodiments of this application adopt the following technical solutions: In a first aspect, this application provides an ion beam radio frequency regulated power source based on feedback control, including a control module, a power amplification module, a filtering module, a matching module, a feedback module, and a power supply module; The signal output terminal of the control module is connected to the signal input terminal of the power amplifier module, the signal output terminal of the power amplifier module is connected to the signal input terminal of the filter module, the signal output terminal of the filter module is connected to the signal input terminal of the matching module, the output terminal of the matching module is used to connect an external ion beam device, the sampling terminal of the feedback module is connected to the ion beam device, the feedback terminal of the feedback module is connected to the signal input terminal of the control module, and the power supply module supplies power to each module. The matching module is adapted to the capacitive load characteristics of the ion beam device to achieve impedance matching and power transmission over a wide bandwidth. The feedback module is used to acquire the voltage signal of the ion beam device and feed it back to the control module. The control module is used to dynamically adjust the amplitude of the output radio frequency signal according to the feedback voltage signal, forming a closed-loop control with the feedback module to maintain the voltage stability at the ion beam device.

[0007] By adopting the above technical solution, a closed-loop control RF voltage regulation architecture adapted to capacitive loads of ion beam devices was constructed. The matching module was used to realize impedance adaptation and effective power transmission of capacitive loads in a wide bandwidth. At the same time, the amplitude of the RF signal was dynamically adjusted by the linkage of the control module and the feedback module. The core problem of the inability to stabilize the output voltage of capacitive non-standard loads in a wide bandwidth in the existing technology was solved at the system level. This achieved continuous stability of the voltage at the ion beam device end and ensured the power supply reliability of the beam transmission system.

[0008] In some embodiments, the matching module includes a load adapter resistor connected in parallel with the input terminals of the ion beam device, and an impedance transformation unit connected to the output terminal of the filter module. The impedance transformation unit matches the output impedance of the power amplifier module with the capacitive load impedance to achieve maximum power transmission.

[0009] By adopting the above technical solution, a targeted structural design is carried out on the matching module. The load matching resistor is used to overcome the wideband power output bottleneck of pure capacitive load. In conjunction with the impedance transformation unit, the output impedance of the power amplifier module is accurately matched with the impedance of the capacitive load, maximizing power transmission efficiency, avoiding voltage attenuation caused by power loss, and further improving the stability and effectiveness of voltage output in the wideband.

[0010] In some embodiments, the feedback module includes a sampling unit and a signal processing unit. The sampling unit is used to sample the voltage at the ion beam device end, and the signal processing unit is used to rectify and filter the sampled AC voltage signal into a DC voltage signal before transmitting it to the control module.

[0011] By adopting the above technical solution, the signal acquisition and processing flow of the feedback module is refined. After the sampling unit accurately acquires the voltage signal at the end of the ion beam device, the signal processing unit rectifies and filters the AC sampling signal into a DC feedback signal, eliminating noise and fluctuation interference in the AC signal. This makes the voltage signal fed back to the control module more accurate and stable, providing a reliable signal basis for the dynamic amplitude adjustment of the control module and improving the accuracy of closed-loop voltage regulation control.

[0012] In some implementations, the control module has a built-in voltage mapping table, which shows the correspondence between the DC feedback voltage value and the actual voltage value at the ion beam device end. The control module adjusts the RF signal amplitude based on the matching result between the DC feedback voltage value and the voltage mapping table.

[0013] By adopting the above technical solution, the control module can directly match the DC feedback voltage value with the actual voltage value at the ion beam device based on the built-in voltage mapping table, eliminating the need for additional signal conversion processing steps, improving the response speed of the control module in dynamically adjusting the amplitude of the radio frequency signal, and enabling rapid compensation for voltage fluctuations at the ion beam device, further ensuring the real-time stability of the voltage.

[0014] In some embodiments, the power amplification module includes an RF amplification circuit and a bias control circuit, wherein the bias control circuit provides a stable static operating point for the RF amplification circuit to ensure that the RF amplification circuit operates in the linear amplification region.

[0015] By adopting the above technical solutions, the power amplifier module uses all-solid-state linear amplification technology to ensure linear power output over a wide bandwidth, avoiding signal distortion caused by nonlinear amplification. At the same time, the bias control circuit provides a stable static operating point for the RF amplifier circuit, preventing the operating point of the RF amplifier circuit from drifting due to factors such as power fluctuations and temperature changes. This ensures that the RF amplifier circuit always operates in the linear amplification region, guaranteeing the stability and integrity of RF signal amplification over a wide bandwidth and avoiding abnormal voltage output caused by signal distortion.

[0016] In some embodiments, the power amplification module further includes a feedback network connected to the radio frequency amplification circuit for stabilizing the amplification factor, widening the bandwidth, and reducing nonlinear distortion.

[0017] By adopting the above technical solution and adding a feedback network to the power amplifier module, the amplification factor of the power amplifier module is effectively stabilized, and the amplification factor fluctuation caused by factors such as device aging and environmental changes is suppressed. At the same time, the bandwidth is widened, which better adapts to the wide bandwidth operation requirements of the RF voltage regulator. It can also reduce the nonlinear distortion of the RF amplifier circuit, improve the purity and consistency of the amplified RF signal, provide a high-quality signal for subsequent module processing, and ultimately ensure the voltage output quality of the ion beam device.

[0018] In some implementations, the control module integrates a multi-dimensional sampling unit for real-time sampling of radio frequency signal status, device operating temperature, and operating conditions.

[0019] By adopting the above technical solution, the control module integrates a multi-dimensional sampling unit to achieve real-time sampling of RF signal status, equipment operating temperature, and operating conditions. This enables timely detection of signal anomalies, equipment overheating, and other operating conditions, providing data support for circuit protection and preventing voltage output interruptions or fluctuations caused by equipment failures. At the same time, the sampling data can be used to optimize RF signal generation parameters, further improving the reliability and stability of the entire RF voltage regulator system.

[0020] In some implementations, the power supply module includes at least two independent power supply units, one of which provides DC operating voltage to the control module and the other of which provides a suitable high-power DC power supply to the power amplifier module.

[0021] By adopting the above technical solution, the power supply module uses at least two independent power supply units to adapt to different modules. It provides low-power, high-precision DC operating voltage for the control module and high-power DC power supply for the power amplifier module. This avoids mutual interference between the power requirements of different modules under a single power supply, and prevents voltage fluctuations in the control module caused by the high-power operation of the power amplifier module. From the power supply perspective, it ensures the accurate control of the control module and the stable amplification of the power amplifier module, laying the power supply foundation for system voltage stabilization.

[0022] In some implementations, the control module uses an anti-interference communication method to achieve remote control, which is used to receive frequency and voltage setting instructions from an external control and display terminal, and supports local touch screen control and display operations.

[0023] By adopting the above technical solution, the control module uses an anti-interference communication method to achieve remote control, effectively resisting the interference of the complex electromagnetic environment of the ion beam equipment, ensuring the accurate transmission of frequency and voltage setting commands from the remote control and display terminal, and avoiding voltage output deviation caused by command distortion; at the same time, the dual operation mode of remote and local touch screen control and display improves the flexibility of RF voltage regulator operation, ensures the accurate execution of voltage setting parameters, and further stabilizes the output voltage of the ion beam device.

[0024] Secondly, this application provides a voltage regulation control method for an ion beam radio frequency voltage regulator based on feedback control, applied to the ion beam radio frequency voltage regulator based on feedback control described in the first aspect, comprising: S1. The control module generates a stable radio frequency small signal that meets the requirements of wideband operation and transmits the radio frequency small signal to the power amplifier module; S2. After the power amplifier module linearly amplifies the small radio frequency signal, the filtering module filters out noise interference to obtain a clean radio frequency signal. S3. After performing wideband impedance matching and power transmission on the clean radio frequency signal, the matching module outputs the radio frequency signal to the ion beam device to provide it with operating voltage. S4. The feedback module collects the voltage signal at the ion beam device in real time, and after rectification and filtering, it is processed into a DC feedback signal and then transmitted to the control module. S5. The control module matches the DC feedback signal with the built-in voltage mapping table and dynamically adjusts the amplitude of the output RF small signal until the voltage at the ion beam device stabilizes at the set value, thus completing the closed-loop voltage regulation control.

[0025] By adopting the above technical solution, the hardware architecture of the RF voltage regulator is combined with the software control logic to form a complete closed-loop control process of signal generation, power amplification, noise filtering, impedance matching, voltage sampling, signal feedback, and dynamic amplitude modulation. This enables full-link, real-time, and precise closed-loop control of the voltage at the ion beam device, effectively suppressing voltage fluctuations caused by various factors such as load impedance changes, signal transmission losses, and device operating fluctuations within a wide bandwidth. Ultimately, this achieves stable output of the voltage at the ion beam device, completely solving the core technical problems of existing technologies.

[0026] In summary, this application includes at least the following beneficial technical effects: 1. A closed-loop control RF voltage regulation architecture adapted to capacitive loads of ion beam devices was constructed. The matching module was used to realize impedance adaptation and effective power transmission of capacitive loads in a wide bandwidth. At the same time, the amplitude of the RF signal was dynamically adjusted by the linkage of the control module and the feedback module. The core problem of the existing technology that it is impossible to stabilize the output voltage in a wide bandwidth for capacitive non-standard loads was solved at the system level. This ensured the continuous stability of the voltage at the ion beam device and guaranteed the power supply reliability of the beam transmission system. 2. The matching module is designed with a specific structure to overcome the bottleneck of wideband power output of pure capacitive loads by using load matching resistors. In conjunction with the impedance transformation unit, the output impedance of the power amplifier module is accurately matched with the impedance of the capacitive load, maximizing power transmission efficiency, avoiding voltage attenuation caused by power loss, and further improving the stability and effectiveness of voltage output in the wideband. 3. The control module directly matches the DC feedback voltage value with the actual voltage value at the ion beam device based on the built-in voltage mapping table, eliminating the need for additional signal conversion processing steps. This improves the response speed of the control module in dynamically adjusting the amplitude of the radio frequency signal, enabling rapid compensation for voltage fluctuations at the ion beam device and further ensuring real-time voltage stability. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly described below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 A system block diagram of an ion beam radio frequency regulated source based on feedback control is provided for embodiments of this application; Figure 2 This is a block diagram illustrating the internal workings of the control module provided in an embodiment of this application. Figure 3 This is a block diagram of the power amplifier module provided in the embodiments of this application; Figure 4 This is a schematic diagram of the matching circuit and feedback design provided in the embodiments of this application; Figure 5 This is a flowchart illustrating a voltage regulation control method for an ion beam radio frequency voltage regulator based on feedback control, provided in an embodiment of this application. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. Furthermore, the technical features involved in the various embodiments described below can be combined with each other as long as they do not conflict with each other.

[0030] This application provides an ion beam RF voltage regulator based on feedback control, which is adapted to the purely capacitive non-standard load characteristics of ion beam devices. It can achieve stable high voltage output in a wide frequency band of 300kHz to 1.5MHz, with a peak-to-peak RF signal of up to 1000V, a phase stability of less than 0.1%, a maximum device size of 460mm×280mm×300mm, and a maximum weight of less than 15kg, fully meeting the performance and structural size requirements of nuclear physics laboratories for RF voltage regulators of beam systems.

[0031] The present application will now be described in detail with reference to the accompanying drawings and embodiments. Example 1

[0032] Embodiment 1 of this application provides an ion beam RF voltage regulator based on feedback control, including a control module, a power amplification module, a filtering module, a matching module, a power supply module, and a feedback module. Each module is in a compact integrated layout. The signal output terminal of the control module is connected to the signal input terminal of the power amplification module, the signal output terminal of the power amplification module is connected to the signal input terminal of the filtering module, the signal output terminal of the filtering module is connected to the signal input terminal of the matching module, the output terminal of the matching module is used to connect an external ion beam device, the sampling terminal of the feedback module is connected to the ion beam device, and the feedback terminal of the feedback module is connected to the signal input terminal of the control module. The power supply module supplies power to each module. The matching module adapts to the capacitive load characteristics of the ion beam device to achieve impedance matching and power transmission over a wide bandwidth. The feedback module collects the voltage signal of the ion beam device and feeds it back to the control module. The control module dynamically adjusts the amplitude of the output RF signal based on the feedback voltage signal, forming a closed-loop control with the feedback module to maintain voltage stability at the ion beam device.

[0033] like Figure 1 As shown, the control module can be a controller, the power amplification module can be a power amplifier, the filtering module can be a filter, the matching module can be a matching circuit, and the feedback module can be a feedback device. The power supply module includes at least two independent power supply units: one provides DC operating voltage to the controller, and the other provides a suitable high-power DC power supply to the power amplification module. Specifically, the power supply module can be AC220V voltage conversion power supply I (AC220V to DC50V) and power supply II (DC50V to DC24V). It should be noted that... Figure 1 The ion beam device is not part of the RF voltage regulator module.

[0034] According to the usage requirements, the controller first generates a stable small signal that meets the frequency requirements and has a peak-to-peak value of about 0.5V. The small signal is then amplified by a power amplifier, filtered to remove noise, and output to the ion beam device after passing through a matching circuit. The feedback device samples the signal from the ion beam device and feeds it back to the controller. In this way, the controller can dynamically and automatically adjust the amplitude of the small signal according to the output, thereby ensuring the voltage stability of the ion beam device.

[0035] Specifically, the controller can use an STM chip, which integrates an RF signal source and can function as a sine wave excitation generator. Because the signal itself is relatively small, it needs to be amplified by a power amplifier. The power amplifier consists of a pre-amplifier stage and a final stage. The pre-amplifier stage uses two MOSFETs in a push-pull amplifier circuit, and the final stage uses two LDMOS transistors in a push-pull amplifier circuit. To ensure signal quality, both stages are Class AB. The amplified signal contains harmonics, which can be filtered out by a filter. The filter uses a segmented design to filter out harmonics in different frequency bands. The filter operates on the principle of an LC circuit tuning loop, providing frequency selection. In the matching circuit, resistors are used to widen the bandwidth. According to transmission line theory, capacitors and transformers in the matching circuit achieve impedance matching to reach maximum output power. The feedback device utilizes the signal voltage division sampling principle, rectifying and filtering the sampled signal before outputting it to the controller. The controller uses this signal to determine the voltage on the ion beam device, compares this value with a preset value, and dynamically adjusts the excitation generator in the chip, completing the feedback loop.

[0036] Furthermore, in addition to functions such as generating small RF signals, external RF control, and automatic voltage regulation, the controller also features circuit protection. Circuit protection allows the controller to cut off the RF output when it detects an abnormality in the feedback signal. The controller can also monitor amplifier and power supply anomalies for equipment protection. Voltage signals are fed to the controller via a voltage divider for monitoring and judgment. The controller sets a decision threshold, and amplifier power supply, static voltage, and temperature can all be fed back to the controller. Once the decision threshold is reached, the controller can cut off the RF output. Correspondingly, the controller integrates a multi-dimensional sampling unit for real-time sampling of RF signal status, equipment operating temperature, and operating conditions.

[0037] In some implementations, the controller employs anti-interference communication for remote control, receiving frequency and voltage setting commands from an external control and display terminal, and supporting local touchscreen control and display. Specifically, the controller is powered by DC 24V from power supply II. The controller's signal processing unit uses an STM32 chip, and external communication is achieved through serial-to-optical conversion. The controller's serial port signal is converted into an optical signal via an optical module. Optical signals have better anti-interference capabilities and can transmit information more effectively in the complex electromagnetic environment of ion beams. The system's centralized control and display terminal can remotely set the signal frequency and amplitude. The commands are transmitted to the controller via the optical port. The controller adjusts the amplitude of the output RF signal to ultimately output the peak-to-peak voltage of the ion beam device. This value is also affected by the sampling value and can dynamically change until it stabilizes at the voltage value required by the system's centralized control and display terminal, thereby ensuring the reliability and stability of the RF power supply output.

[0038] In some implementations, the internal block diagram of the controller is referenced. Figure 2 As shown, the controller includes a remote control communication module, a local communication module, a status display module, a signal generation module, a sampling module, and a power supply processing module. The power supply processing module is connected to an external power supply unit. The signal generation module is connected to an external signal processing unit. The sampling module includes signal sampling, status sampling, and temperature sampling. The sampling module is connected to the external signal processing unit, the signal generation module, and the status display module, respectively. The status display module is connected to an external local touchscreen control terminal. The remote control communication module is connected to both the signal generation module and an external system centralized control terminal. The local communication module is connected to both the signal generation module and an external local touchscreen control terminal. These modules, through their interconnections, work together to implement the various functions of the controller described above; therefore, the controller's functions will not be elaborated upon further here.

[0039] refer to Figure 3 As shown, the power amplifier includes an RF amplification circuit and a bias control circuit. The bias control circuit provides a stable quiescent operating point for the amplification circuit, ensuring that the amplification circuit operates in the linear amplification region. In some embodiments, the power amplification module further includes a feedback network connected to the RF amplification circuit, used to stabilize the amplification factor, broaden the bandwidth, and reduce nonlinear distortion. Figure 3 In this circuit, RF input filtering, isolation, and impedance matching are achieved through a transformer. The number of turns and the u-value of the transformer are appropriately set according to the characteristics of the MOS in the RF amplifier circuit. The feedback network includes LC feedback, RC feedback, and LRC feedback. Different feedback methods are selected for different loads and bandwidths. A suitable feedback method can be chosen based on the debugging process. This embodiment focuses on the output signal magnitude and uses RC feedback, with the resistance R being several hundred ohms or higher. 50V power supply filtering is achieved through a series choke, and energy storage is achieved through a parallel large capacitor with a capacitance of several hundred uF. The bias control circuit achieves a fixed gate voltage through a voltage regulator module. The sampling circuit includes temperature sampling, voltage sampling, and current sampling. Temperature sampling converts the temperature sample value into a voltage value output to the controller. Voltage sampling can be directly processed by voltage division. Current sampling outputs a voltage value to the controller through a Hall sensor. Output power combining and impedance matching are achieved through a transformer with a turns ratio of 2:1 and a u-value around 2kΩ.

[0040] Furthermore, the core of the power amplifier is the use of field-effect transistors (FETs) for power amplification. Its working principle is to use the signal input to the gate to control the DC power supplied by the DC power supply at the drain, converting it into AC signal power output. Besides the portion converted to AC output, a portion of the power supplied by the DC power supply is dissipated as heat on the amplifying transistor, becoming its power dissipation. This module, while adhering to the above principles, strives to maximize output power and efficiency while meeting other application requirements. Based on this, the power amplifier in this embodiment employs all-solid-state linear amplification technology to achieve shortwave RF power amplification. Each module consists of a push-pull circuit composed of two LDMOS FETs, capable of outputting 300W linear power within the range of 300kHz to 1.5MHz. The power gain is approximately 23dB. The linearity of the circuit is improved by using power transistor derating and adding feedback circuitry. The internal design of the power amplifier in this embodiment will be further explained below.

[0041] For radio frequency (RF) amplifier circuits, the main components include the input stage, amplifying devices, output stage, feedback loop, and filtering. The design process for RF amplifier circuits must ensure impedance matching between the input and output, while also considering the amplifier's specifications and the efficiency of the amplifying transistors.

[0042] Between amplifier stages or between an amplification stage and the load, a specific type of loop is required, typically a four-terminal network. Because this power amplifier has a relatively high operating bandwidth, the four-terminal network between the amplifier and the load performs the following tasks: matching the load impedance to the optimal impedance required by the amplifier to ensure maximum power transfer from the amplifier to the load (i.e., it acts as a network matching mechanism); suppressing unwanted frequencies outside the operating frequency range (i.e., it should have good filtering capabilities); and ensuring that several electronic devices can effectively transfer power to the load when they output power simultaneously, while simultaneously isolating these devices from each other as much as possible to prevent interference.

[0043] In general amplifier modules, the feedback network applies a portion or all of the output quantity (output voltage or output current) to the input circuit through a specific circuit configuration. This influences the input quantity (input voltage or input current of the amplifier circuit) and thus improves circuit performance. This is mainly reflected in the following aspects: Stable amplification factor: Changes in amplification factor caused by factors such as changes in ambient temperature, fluctuations in power supply voltage, aging of components, and replacement of devices will be reduced; Changing input and output impedance: Different configurations of AC negative feedback will have different effects on input and output impedance; Widening the bandwidth: Since the introduction of negative feedback reduces the changes in amplification factor caused by various reasons, including changes in amplification factor caused by changes in signal frequency, the effect is to widen the bandwidth. Reduce nonlinear distortion: Since semiconductor devices (such as transistors and field-effect transistors) in amplifier circuits have nonlinear characteristics, when the input signal is a sine wave with a large amplitude, the output signal is often not a sine wave and contains other harmonics. Introducing negative feedback can suppress this nonlinear distortion.

[0044] For bias control circuits, the bias control circuit provides a stable quiescent operating point for the RF amplifier circuit. The quiescent operating point not only determines whether the circuit will produce distortion, but also affects dynamic parameters such as voltage amplification factor and input resistance. In fact, fluctuations in power supply voltage, aging of components, and changes in amplifier tube parameters due to temperature variations can all cause instability in the quiescent operating point, thereby making the dynamic parameters unstable, and sometimes the circuit may even fail to function properly.

[0045] The bias control circuit provides a constant bias voltage to the amplifier transistor, ensuring the transistor's path is open and in the linear amplification region. In this region, the bias voltage directly affects the gain and signal integrity of the RF signal. The bias control circuit primarily uses constant voltage devices to ensure the stability of the voltage output, while the circuit design must also meet requirements such as voltage adjustability, isolation, and filtering.

[0046] In some embodiments, the matching module includes a load matching resistor connected in parallel with the input terminals of the ion beam device, and an impedance transformation unit connected to the output terminal of the filtering module. The impedance transformation unit matches the output impedance of the power amplifier module with the capacitive load impedance to achieve maximum power transmission. The feedback module includes a sampling unit and a signal processing unit. The sampling unit samples the voltage at the ion beam device terminal, and the signal processing unit rectifies and filters the sampled AC voltage signal into a DC voltage signal before transmitting it to the control module. The control module has a built-in voltage mapping table, which shows the correspondence between the DC feedback voltage value and the actual voltage value at the ion beam device terminal. The control module adjusts the RF signal amplitude based on the matching result between the DC feedback voltage value and the voltage mapping table.

[0047] Specifically, for the matching circuit and feedback design, the RF regulated power supply operates in the 300kHz-1.5MHz range, with a capacitive load of tens of pF. To achieve high voltage output on a wide-bandwidth non-standard load, the power amplifier module's wide-bandwidth output and the intermediate matching circuit design must be met. Since the total impedance presented by the ion beam device is a purely capacitive load, outputting power to a capacitive load and reaching thousands of volts requires a resonant network. However, the bandwidth of a simple LC resonator is very narrow and cannot meet the requirement of achieving a peak-to-peak voltage output of 1000V across the entire 300kHz-1.5MHz band. Therefore, a resistor is connected in parallel across the ion beam input, such as... Figure 4 As shown in the circuit diagram, resistor R2 has a resistance of 2kΩ and a power rating of 200W. Calculations show that a 2kΩ resistor at full power output of 200W will produce a maximum voltage of 1770V, which is greater than the required 1000V. The power amplifier's output impedance is 50Ω, so transformer T1 is needed for impedance transformation to meet the amplifier's maximum power output. The impedance ratio is 1:40, therefore the turns ratio of transformer T1 should be 1:6. Multiple tests show that a turns ratio of 3:18 achieves the optimal power output.

[0048] Further reference Figure 4 To stabilize the output voltage, sampling circuits C1, C2, and C3 are used to rectify and filter the sampled voltage into a DC voltage for output, which is then fed back to the controller via X5. A lookup table between this DC voltage value and the actual voltage values ​​at both ends of the ion beam is pre-configured within the controller. The working principle is that upon receiving a voltage value at a specific frequency, the controller begins to increase the output value while simultaneously receiving the feedback DC signal. The increase in the output signal stops only when the DC signal voltage value matches the value in the pre-configured lookup table. If there are impedance changes in the ion beam, the controller can dynamically adjust the output voltage value to ensure the stability of the voltage across the ion beam. Example 2

[0049] Based on the feedback-controlled ion beam RF voltage regulator provided in Embodiment 1, Embodiment 2 provides a voltage regulation control method for the feedback-controlled ion beam RF voltage regulator, applied to the feedback-controlled ion beam RF voltage regulator described in Embodiment 1. (Reference) Figure 5 As shown, the method includes the following steps.

[0050] S1. The control module generates a stable radio frequency (RF) small signal that meets the requirements for wideband operation and transmits the RF small signal to the power amplifier module. Specifically, the system's centralized control and display terminal (remote) or the local touchscreen control and display terminal (local) sends setting instructions for signal frequency and voltage amplitude to the control module. The control module's signal generation module generates a stable RF small signal that meets the requirements for wideband operation from 300kHz to 1.5MHz according to the instructions. The initial peak-to-peak value of the RF small signal is about 0.5V. After generation, it is transmitted to the power amplifier module.

[0051] S2. The power amplification module linearly amplifies the small RF signal, and then the filtering module filters out noise interference to obtain a clean RF signal. Specifically, the power amplification module linearly amplifies the received small RF signal, amplifies it to 300W linear power through a push-pull circuit, stabilizes the amplification factor and reduces nonlinear distortion through a negative feedback network, and then transmits the amplified RF signal to the filtering module. S3. The filtering module filters out noise from the amplified RF signal, allowing only clean RF signals within the operating frequency band to pass through. The filtered clean RF signal is then transmitted to the matching module.

[0052] S3, the matching module performs wideband impedance matching and power transmission on the clean RF signal, and then outputs the RF signal to the ion beam device to provide it with operating voltage. Specifically, the matching module completes impedance transformation through transformer T1 to achieve precise impedance matching with the capacitive load of the ion beam device, transmitting the RF signal to the ion beam device at maximum power to provide it with operating voltage.

[0053] S4. The feedback module acquires the voltage signal from the ion beam device in real time, and after rectification and filtering, it is processed into a DC feedback signal and transmitted to the control module. Specifically, the sampling unit of the feedback module acquires the radio frequency voltage signal from the ion beam device in real time, and the signal processing unit rectifies and filters the acquired AC voltage signal into a stable DC feedback signal, which is then transmitted to the control module through the X5 interface.

[0054] S5. The control module matches the DC feedback signal with the built-in voltage mapping table and dynamically adjusts the amplitude of the output RF small signal until the voltage at the ion beam device stabilizes at the set value, completing closed-loop voltage regulation control. Specifically, the control module matches the received DC feedback voltage value with the built-in voltage mapping table in real time, and dynamically adjusts the amplitude of the RF small signal output by the signal generation module according to the matching result until the DC feedback voltage value matches the corresponding set voltage value in the voltage mapping table, and the voltage at the ion beam device stabilizes at the set value, completing closed-loop voltage regulation control. If the load impedance of the ion beam device changes, steps S4-S5 are repeated to achieve real-time dynamic voltage stabilization.

[0055] The RF voltage regulator in this embodiment achieves stable voltage output over a wide bandwidth for capacitive loads through the coordinated operation of each module. All performance indicators meet the requirements for use in ion beam devices. Furthermore, the device has a compact integrated structure, and its size and weight meet the customization requirements, demonstrating excellent reliability and practicality.

[0056] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A feedback-controlled ion beam radio frequency regulated source, characterized in that, It includes a control module, a power amplifier module, a filter module, a matching module, a feedback module, and a power supply module; The signal output terminal of the control module is connected to the signal input terminal of the power amplifier module, the signal output terminal of the power amplifier module is connected to the signal input terminal of the filter module, the signal output terminal of the filter module is connected to the signal input terminal of the matching module, the output terminal of the matching module is used to connect an external ion beam device, the sampling terminal of the feedback module is connected to the ion beam device, the feedback terminal of the feedback module is connected to the signal input terminal of the control module, and the power supply module supplies power to each module. The matching module is adapted to the capacitive load characteristics of the ion beam device to achieve impedance matching and power transmission over a wide bandwidth. The feedback module is used to acquire the voltage signal of the ion beam device and feed it back to the control module. The control module is used to dynamically adjust the amplitude of the output radio frequency signal according to the feedback voltage signal, forming a closed-loop control with the feedback module to maintain the voltage stability at the ion beam device.

2. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The matching module includes a load adapter resistor connected in parallel with the input terminals of the ion beam device, and an impedance transformation unit connected to the output terminal of the filter module. The impedance transformation unit matches the output impedance of the power amplifier module with the capacitive load impedance to achieve maximum power transmission.

3. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The feedback module includes a sampling unit and a signal processing unit. The sampling unit is used to sample the voltage at the ion beam device end, and the signal processing unit is used to rectify and filter the sampled AC voltage signal into a DC voltage signal before transmitting it to the control module.

4. The ion beam RF voltage regulator based on feedback control according to claim 3, characterized in that, The control module has a built-in voltage mapping table, which shows the correspondence between the DC feedback voltage value and the actual voltage value at the ion beam device. The control module adjusts the RF signal amplitude based on the matching result between the DC feedback voltage value and the voltage mapping table.

5. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The power amplification module includes an RF amplification circuit and a bias control circuit. The bias control circuit provides a stable static operating point for the RF amplification circuit to ensure that the RF amplification circuit operates in the linear amplification region.

6. The ion beam RF voltage regulator based on feedback control according to claim 5, characterized in that, The power amplification module also includes a feedback network, which is connected to the radio frequency amplification circuit to stabilize the amplification factor, broaden the bandwidth, and reduce nonlinear distortion.

7. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The control module integrates a multi-dimensional sampling unit for real-time sampling of radio frequency signal status, equipment operating temperature, and operating conditions.

8. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The power supply module includes at least two independent power supply units, one of which provides DC operating voltage to the control module and the other provides a suitable high-power DC power supply to the power amplifier module.

9. The ion beam RF voltage regulator based on feedback control according to claim 1, characterized in that, The control module uses an anti-interference communication method to achieve remote control, and is used to receive frequency and voltage setting instructions from an external control and display terminal, and supports local touch screen control and display operations.

10. A voltage regulation control method for an ion beam radio frequency voltage regulator based on feedback control, applied to the ion beam radio frequency voltage regulator based on feedback control as described in any one of claims 1-9, characterized in that, include: S1. The control module generates a stable radio frequency small signal that meets the requirements of wideband operation and transmits the radio frequency small signal to the power amplifier module; S2. After the power amplifier module linearly amplifies the small radio frequency signal, the filtering module filters out noise interference to obtain a clean radio frequency signal. S3. After performing wideband impedance matching and power transmission on the clean radio frequency signal, the matching module outputs the radio frequency signal to the ion beam device to provide it with operating voltage. S4. The feedback module collects the voltage signal at the ion beam device in real time, and after rectification and filtering, it is processed into a DC feedback signal and then transmitted to the control module. S5. The control module matches the DC feedback signal with the built-in voltage mapping table and dynamically adjusts the amplitude of the output RF small signal until the voltage at the ion beam device stabilizes at the set value, thus completing the closed-loop voltage regulation control.

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