A quartz crystal laser etching direction abnormality early warning method and system

Abstract

The application relates to the technical field of laser etching, and discloses a quartz crystal laser etching direction abnormality early warning method and system, which comprises the following steps: arranging a plurality of etching monitoring nodes on a quartz crystal along a specified etching path of the quartz crystal; obtaining an actual track after the quartz crystal is etched, and correspondingly arranging the same number of actual monitoring points as the etching monitoring nodes on the actual track; calculating deviation values of the actual monitoring points, constructing the deviation values into a deviation value sequence, and preliminarily determining the etching direction abnormality degree according to the deviation values; adjusting the etching direction abnormality degree according to the change rates of adjacent deviation values, obtaining an abnormality evaluation result, and performing graded abnormality early warning according to the abnormality evaluation result. Through the node-by-node monitoring and multi-stage abnormality evaluation of the etching path, the application realizes fine identification and graded early warning of the etching direction abnormality.

Description

Technical Field

[0001] This invention relates to the field of laser etching technology, and more specifically, to a method and system for early warning of abnormal laser etching direction in quartz crystals. Background Technology

[0002] The laser etching technology for quartz crystals has a wide range of applications in the manufacturing of microelectronic devices, optoelectronic components and high-precision sensors. Its processing accuracy directly affects the performance of devices and the yield of finished products.

[0003] However, in actual etching processes, due to laser energy fluctuations, mechanical platform positioning errors, environmental disturbances, and minute deformations of the quartz crystal itself, the etching path may deviate from the designed trajectory, resulting in abnormal etching directions. These anomalies not only reduce processing consistency but may also lead to device performance degradation or scrapping, thereby increasing production costs. Traditional etching monitoring methods mainly rely on overall path comparison or manual experience judgment, which suffers from the inability to quantify deviations, difficulty in capturing sudden local shifts, and lack of tiered early warning systems. This means that abnormal situations during etching are often not identified in a timely and accurate manner, failing to provide a basis for process adjustments or equipment control.

[0004] Therefore, it is necessary to provide a method and system for early warning of abnormalities in the laser etching direction of quartz crystals to solve the problems of traditional monitoring methods, which cannot quantify deviations, are difficult to capture sudden local shifts, and lack hierarchical early warning, resulting in abnormal situations not being identified in a timely and accurate manner and failing to provide a basis for process adjustment or equipment control. Summary of the Invention

[0005] In view of this, the present invention proposes a method and system for early warning of abnormalities in the laser etching direction of quartz crystals, aiming to solve the problems of traditional monitoring methods, which cannot quantify deviations, are difficult to capture local sudden shifts, and lack hierarchical early warning, resulting in abnormal situations not being identified in a timely and accurate manner, and thus failing to provide a basis for process adjustment or equipment control.

[0006] On the one hand, this invention proposes a method for early warning of abnormal laser etching direction in quartz crystals, including: Several etching monitoring nodes are set up on the quartz crystal along the specified etching path; Obtain the actual trajectory of the quartz crystal after etching, and deploy the same number of actual monitoring points as the etching monitoring nodes on the actual trajectory; By comparing each actual monitoring point with the corresponding etching monitoring node in turn, it is determined whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, the deviation value of each actual monitoring point is calculated, the deviation values ​​are constructed into a deviation value sequence, and the degree of abnormality of the etching direction is initially determined based on the deviation values. Calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of abnormality in the etching direction according to the rate of change of adjacent deviation values, obtain the abnormality assessment result, and perform graded abnormality warning based on the abnormality assessment result.

[0007] Furthermore, when setting up several etching monitoring nodes on the quartz crystal along the specified etching path, the process includes: The etching monitoring nodes include the start and end points of a specified path, and the spacing between adjacent etching monitoring nodes is the same.

[0008] Furthermore, before sequentially comparing each actual monitoring point with its corresponding etching monitoring node to determine if there is a spatial coordinate deviation, the process includes: Connect the starting point of the etching monitoring node with its adjacent points to form a baseline; connect the starting point of the actual monitoring point with its adjacent points to form a calibration line. Align the baseline with the calibration line to determine if there is any spatial coordinate deviation at the actual monitoring points of the actual trajectory.

[0009] Furthermore, when comparing each actual monitoring point with the corresponding etching monitoring node in sequence to determine whether there is a spatial coordinate deviation at the actual monitoring point, the process includes: The actual monitoring points and etching monitoring nodes were numbered sequentially. Rotate the calibration line around the starting point until it coincides with the baseline, and compare whether the actual monitoring point with the same number coincides with the etching monitoring node. If all points overlap, it is determined that there is no spatial coordinate deviation in the actual monitoring points. If they do not overlap, it is determined that there is a spatial coordinate deviation in the actual monitoring point, and the non-overlapping actual monitoring point and the corresponding etching monitoring node number are marked.

[0010] Furthermore, the calculation of the deviation value for each actual monitoring point includes: Based on the marked non-overlapping actual monitoring points and the corresponding etching monitoring node numbers, the spatial coordinates of the non-overlapping actual monitoring points and the corresponding etching monitoring nodes are extracted respectively. Calculate the Euclidean distance between the actual monitoring point and the etching monitoring node with the same number as the deviation value of the monitoring point; Arrange the deviation values ​​of all non-coincident points in ascending order of their numbers to form a deviation value sequence.

[0011] Furthermore, when initially determining the degree of abnormality in the etching direction based on the deviation value, the process includes: The deviation values ​​in the deviation value sequence are compared with the preset deviation thresholds in turn. The number of actual monitoring points whose deviation values ​​exceed the deviation thresholds is counted and recorded as the number of non-conforming points. The ratio of the number of non-conforming points to the total number of actual monitoring points is calculated and recorded as the abnormality ratio. The maximum deviation value among the number of defective items is counted, and the difference between the maximum deviation value and the deviation threshold is calculated. The degree of abnormality in the etching direction is preliminarily determined by the difference and the abnormality ratio. Specifically, a proportional limit value and a difference limit value are set. When the abnormality ratio is zero, the degree of abnormality in the etching direction is initially determined to be zero. When the abnormality ratio is greater than zero and less than or equal to the proportional limit value, and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a first degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is less than or equal to the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a third degree of abnormality. Zero is less than the first degree of abnormality, the first degree of abnormality is less than the second degree of abnormality, and the second degree of abnormality is less than the third degree of abnormality.

[0012] Furthermore, when adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain the anomaly assessment result, the following steps are included: Obtain the maximum value of the rate of change of adjacent deviation values, and record it as the maximum rate of change; If the maximum rate of change is less than or equal to the preset rate of change threshold, it is determined that no adjustment is needed to the degree of abnormality in the etching direction; If the maximum rate of change is greater than the preset rate of change threshold, it is determined that the degree of abnormality in the etching direction needs to be adjusted.

[0013] Furthermore, when adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain the anomaly assessment result, the method further includes: Calculate the difference between the maximum rate of change and the preset rate of change threshold, and record it as the rate of change difference; A difference range is set. If the difference in the rate of change is less than the lower limit of the difference range, the degree of abnormality in the etching direction is adjusted by a first adjustment coefficient. If the difference in the rate of change is within the difference range, the degree of abnormality in the etching direction is adjusted by a second adjustment coefficient. If the difference in the rate of change is greater than the upper limit of the difference range, the degree of abnormality in the etching direction is adjusted by a third adjustment coefficient. The adjustment coefficient ranges from 1 to the first adjustment coefficient to the second adjustment coefficient to the third adjustment coefficient; the anomaly assessment result is the product of the adjustment coefficient and the degree of anomaly in the etching direction.

[0014] Furthermore, the step of issuing graded anomaly warnings based on anomaly assessment results includes: Abnormal assessment results are classified and determined by pre-defined assessment ranges; When the anomaly assessment result is zero, the anomaly level is determined to be zero, and no anomaly warning is issued. When the abnormal assessment result is greater than zero and less than the minimum value of the assessment range, the abnormality level is determined to be Level 1; when the abnormal assessment result is within the range of the assessment range, the abnormality level is determined to be Level 2; when the abnormal assessment result is greater than the maximum value of the assessment range, the abnormality level is determined to be Level 3; the abnormality warning levels from low to high are Level 0, Level 1, Level 2 and Level 3.

[0015] Compared with existing technologies, the advantages of this invention are as follows: By performing node-by-node monitoring and multi-stage anomaly assessment of the etching path, this invention achieves refined identification and graded early warning of etching direction anomalies. First, by deploying several etching monitoring nodes along the prescribed etching path, the etching path is discretized from a continuous curve into multiple reference points with clear spatial coordinates. This provides a unified and stable reference benchmark for subsequent comparative analysis of etching trajectories, reducing inaccurate judgments caused by overall path deviation or local measurement errors. Second, by obtaining the actual etching trajectory after the actual etching is completed, and deploying the same number of actual monitoring points on this actual trajectory as the number of etching monitoring nodes, a one-to-one correspondence between the designed path and the actual etching result in the spatial dimension is achieved. This allows etching deviations to be quantified as specific spatial coordinate differences, avoiding the uncertainty of judgments based solely on overall shape or subjective experience. Furthermore, by comparing the spatial coordinate deviations between the actual monitoring points and the corresponding etching monitoring nodes one by one, and constructing a deviation value sequence, not only can the overall deviation of the etching direction be reflected, but also the distribution characteristics of the deviation along the etching path can be revealed, thus achieving a preliminary and objective assessment of the degree of etching direction anomaly. Finally, by introducing the rate of change of adjacent deviation values ​​in the deviation value sequence, the initially determined degree of etching direction anomaly can be adjusted. This can identify sudden directional drift or unstable etching behavior during the etching process, avoiding the problem of ignoring the trend of deviation change based solely on the magnitude of the deviation, making the anomaly assessment results closer to the actual processing risk level. Based on this, graded anomaly warnings can be implemented according to the final anomaly assessment results, which helps to distinguish between minor and severe anomalies, providing a reliable basis for subsequent process intervention, equipment adjustment, or etching termination, thereby improving the stability, processing consistency, and finished product yield of the quartz crystal laser etching process.

[0016] On the other hand, this application also provides a quartz crystal laser etching direction anomaly early warning system, including: The node deployment module is used to deploy several etching monitoring nodes on the quartz crystal along the specified etching path of the quartz crystal; The acquisition module is used to acquire the actual trajectory of the quartz crystal after etching is completed, and to deploy the same number of actual monitoring points on the actual trajectory as the number of etching monitoring nodes. The preliminary anomaly determination module is used to compare each actual monitoring point with the corresponding etching monitoring node in turn to determine whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, the deviation value of each actual monitoring point is calculated, the deviation values ​​are constructed into a deviation value sequence, and the degree of anomaly in the etching direction is preliminarily determined based on the deviation values. The anomaly warning module is used to calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of anomaly in the etching direction according to the rate of change of adjacent deviation values, obtain the anomaly assessment result, and perform graded anomaly warning based on the anomaly assessment result.

[0017] It is understood that the quartz crystal laser etching direction anomaly early warning method and system provided in this application have the same beneficial effects, and will not be described in detail here. Attached Figure Description

[0018] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 A flowchart of a method for early warning of abnormal laser etching direction of quartz crystals provided in an embodiment of the present invention; Figure 2 A functional block diagram of a quartz crystal laser etching direction anomaly early warning system provided in an embodiment of the present invention. Detailed Implementation

[0019] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the disclosure to those skilled in the art. It should be noted that, unless otherwise specified, embodiments and features in the embodiments of the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0020] In some embodiments of this application, see Figure 1 As shown, this embodiment provides a method for early warning of abnormal laser etching direction in quartz crystals, including the following steps: S100. Several etching monitoring nodes are set up on the quartz crystal along the specified etching path of the quartz crystal. S200: Obtain the actual trajectory of the quartz crystal after etching is completed, and set up the same number of actual monitoring points on the actual trajectory as the number of etching monitoring nodes. S300. Compare each actual monitoring point with the corresponding etching monitoring node in turn to determine whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, calculate the deviation value of each actual monitoring point, construct a deviation value sequence for each deviation value, and preliminarily determine the degree of abnormality of the etching direction based on the deviation value. S400. Calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of abnormality in the etching direction according to the rate of change of adjacent deviation values, obtain the abnormality assessment result, and perform graded abnormality warning according to the abnormality assessment result.

[0021] Understandably, this invention achieves refined identification and graded early warning of etching direction anomalies by monitoring the etching path at various nodes and conducting multi-stage anomaly assessment. First, by deploying several etching monitoring nodes along the prescribed etching path, the continuous curve is discretized into multiple reference points with clear spatial coordinates. This provides a unified and stable reference benchmark for subsequent comparative analysis of etching trajectories, reducing inaccurate judgments caused by overall path deviations or local measurement errors. Second, by obtaining the actual etching trajectory after the actual etching is completed and deploying the same number of actual monitoring points as the etching monitoring nodes on this actual trajectory, a one-to-one correspondence between the designed path and the actual etching result in the spatial dimension is achieved. This allows etching deviations to be quantified as specific spatial coordinate differences, avoiding the uncertainty of judgments based solely on overall shape or subjective experience. Furthermore, by comparing the actual monitoring points with their corresponding etching monitoring nodes one by one to determine if there are spatial coordinate deviations, and constructing a deviation value sequence, not only can the overall deviation of the etching direction be reflected, but the distribution characteristics of the deviations along the etching path can also be revealed, thereby achieving a preliminary and objective assessment of the degree of etching direction anomalies. Finally, by introducing the rate of change of adjacent deviation values ​​in the deviation value sequence, the initially determined degree of etching direction anomaly is adjusted. This allows for the identification of sudden directional drift or unstable etching behavior during the etching process, avoiding the problem of ignoring the trend of deviation changes based solely on the magnitude of the deviation. This makes the anomaly assessment results closer to the actual processing risk level. Based on this, graded anomaly warnings are implemented according to the final anomaly assessment results, which helps to distinguish between minor and severe anomalies. This provides a reliable basis for subsequent process intervention, equipment adjustment, or etching termination, thereby improving the stability, processing consistency, and finished product yield of the quartz crystal laser etching process.

[0022] In some embodiments of this application, the step of deploying several etching monitoring nodes on the quartz crystal along a predetermined etching path includes: The etching monitoring nodes include the start and end points of a specified path, and the spacing between adjacent etching monitoring nodes is the same.

[0023] Understandably, including the start and end points of the etching path in the etching monitoring nodes, and setting the spacing between adjacent etching monitoring nodes to the same interval, creates a uniformly distributed monitoring reference point throughout the entire etching path. This ensures consistent monitoring accuracy across all locations along the etching path, avoiding the problem of dense monitoring in some areas and insufficient monitoring in others due to uneven node distribution. This makes the judgment of etching direction anomalies less susceptible to amplification or weakening by local errors. Furthermore, including both the start and end points in the etching monitoring nodes helps to fully cover the beginning and end areas of the etching path, effectively identifying alignment deviations in the initial etching stage and potential cumulative offsets at the end of the etching process, thus improving the comprehensiveness and reliability of etching direction anomaly detection overall. In addition, the equidistant arrangement of etching monitoring nodes provides a unified spatial scale basis for subsequent calculations of deviation value sequences and their rates of change, facilitating comparative analysis of etching results from different etching paths or different batches of quartz crystals.

[0024] In one specific embodiment of this application, when performing linear laser etching on a rectangular quartz crystal, the etching path length is predetermined to be 100 mm according to the process design. The start and end points of this etching path are designated as the first and last etching monitoring nodes, respectively. Several intermediate etching monitoring nodes are arranged at equal intervals between the start and end points, ensuring that the distance between adjacent etching monitoring nodes is 10 mm, thus forming 11 etching monitoring nodes along the entire etching path. After etching is completed, the corresponding actual etching trajectory is obtained, and actual monitoring points corresponding to the aforementioned 11 etching monitoring nodes are sequentially selected on this actual etching trajectory.

[0025] In some embodiments of this application, before sequentially comparing whether there is a spatial coordinate deviation between each actual monitoring point and the corresponding etching monitoring node, the following steps are included: Connect the starting point of the etching monitoring node with its adjacent points to form a baseline; connect the starting point of the actual monitoring point with its adjacent points to form a calibration line. Align the baseline with the calibration line to determine if there is any spatial coordinate deviation at the actual monitoring points of the actual trajectory.

[0026] Understandably, before comparing the spatial coordinates of each actual monitoring point with its corresponding etching monitoring node, a baseline is formed by connecting the starting point of the etching monitoring node with its adjacent points, and a calibration line is formed by connecting the starting point of the actual monitoring point with its adjacent points. Aligning the baseline with the calibration line eliminates the influence of overall translation or rotation, allowing subsequent spatial coordinate deviation judgments to focus more on the deviation of the etching direction itself. This avoids misjudging overall positional differences caused by factors such as quartz crystal clamping errors, workpiece placement angle deviations, or inconsistent coordinate system selections as etching direction anomalies, thus improving the accuracy and stability of direction anomaly judgment. Simultaneously, using the line segment formed by the starting point and its adjacent points as the alignment baseline ensures a clear geometric reference for the alignment process, simplifying the computational complexity of coordinate alignment and reducing implementation difficulty. Furthermore, this alignment method provides a unified reference direction for subsequent comparisons of each monitoring point, making the etching results between different etching paths and different batches of quartz crystals comparable.

[0027] In one specific embodiment of this application, when performing linear laser etching on a quartz crystal, a starting point and an adjacent etching monitoring node are pre-selected on the designed etching path, and the two are connected to form a baseline. After etching is completed, the corresponding actual monitoring point starting point and its adjacent actual monitoring points are extracted from the actual etching trajectory, and the two are connected to form a calibration line. Before judging spatial coordinate deviation, the calibration line is rotated and translated to make the calibration line coincide with the baseline in direction and starting point position. After alignment, the spatial positional relationship between each of the remaining numbered actual monitoring points and the corresponding etching monitoring node is compared sequentially. Through the above-described method of this invention, even if the actual etching trajectory as a whole undergoes slight rotation or positional shift, the directional deviation of each monitoring point relative to the specified etching path can still be accurately identified, thereby improving the reliability of the etching direction anomaly detection results.

[0028] In some embodiments of this application, the step of sequentially comparing each actual monitoring point with the corresponding etching monitoring node to determine whether there is a spatial coordinate deviation at the actual monitoring point includes: The actual monitoring points and etching monitoring nodes were numbered sequentially. Rotate the calibration line around the starting point until it coincides with the baseline, and compare whether the actual monitoring point with the same number coincides with the etching monitoring node. If all points overlap, it is determined that there is no spatial coordinate deviation in the actual monitoring points. If they do not overlap, it is determined that there is a spatial coordinate deviation in the actual monitoring point, and the non-overlapping actual monitoring point and the corresponding etching monitoring node number are marked.

[0029] Understandably, by sequentially numbering the actual monitoring points and etching monitoring nodes, and then comparing each actual monitoring point and etching monitoring node with the same number after rotating the calibration line around the starting point to coincide with the baseline, precise location and quantitative identification of etching trajectory deviations can be achieved. Based on the numbered correspondence, this avoids the point confusion problems that easily occur in traditional overall fitting or fuzzy comparison methods, ensuring that each actual monitoring point has a clear mapping relationship with its designed position, thereby improving the accuracy and traceability of spatial coordinate deviation judgment. Simultaneously, by rotating and aligning only around the starting point without introducing additional scale changes, the authenticity of the etching path length and spacing is maintained, ensuring that the comparison results truly reflect the etching direction deviation. When a non-coincidence is detected, marking the corresponding numbered actual monitoring points and etching monitoring nodes further clarifies the specific location segment where the anomaly occurred, providing refined data support for subsequent anomaly severity assessment and graded early warning, thus facilitating early identification and accurate warning of etching direction anomalies.

[0030] In one specific embodiment of this application, etching monitoring nodes numbered 1 to N are sequentially set at equal intervals along a preset straight etching path, where number 1 corresponds to the starting point of the etching path. After the quartz crystal etching is completed, a corresponding number of actual monitoring points are extracted from the actual etching trajectory and numbered 1 to N in sequence. Subsequently, actual monitoring points numbered 1 and 2 are connected to form a calibration line, and etching monitoring nodes numbered 1 and 2 are connected to form a baseline. The calibration line is rotated to align with the baseline direction, using the starting point corresponding to number 1 as the rotation center. After alignment, the spatial positional relationship between actual monitoring points with the same number and etching monitoring nodes is compared sequentially. If actual monitoring points numbered 5 and 6 fail to coincide with their corresponding etching monitoring nodes, it is determined that there is an etching direction deviation at the corresponding position.

[0031] In some embodiments of this application, the calculation of the deviation value for each actual monitoring point includes: Based on the marked non-overlapping actual monitoring points and the corresponding etching monitoring node numbers, the spatial coordinates of the non-overlapping actual monitoring points and the corresponding etching monitoring nodes are extracted respectively. Calculate the Euclidean distance between the actual monitoring point and the etching monitoring node with the same number as the deviation value of the monitoring point; Arrange the deviation values ​​of all non-coincident points in ascending order of their numbers to form a deviation value sequence.

[0032] Understandably, by extracting spatial coordinates only for the marked, non-overlapping actual monitoring points and their corresponding etching monitoring nodes, and using Euclidean distance to quantify the spatial deviation between them, redundant calculations for unbiased points can be avoided, thereby improving the relevance and efficiency of deviation calculation. Euclidean distance, as a universal metric reflecting the true geometric distance between two points in three-dimensional space, can simultaneously and comprehensively reflect the offset of the etching trajectory in multiple coordinate directions, giving the obtained deviation values ​​clear physical meaning and good comparability. Furthermore, arranging the deviation values ​​of all non-overlapping points in ascending order of their numbers to form a deviation value sequence helps maintain consistency between the deviation data and the spatial order of the etching path. This allows for a direct reflection of the distribution characteristics and trends of the etching direction deviation along the path, providing a continuous and structured data foundation for subsequent calculations of the rate of change of adjacent deviation values ​​and a comprehensive assessment of the degree of etching direction anomalies, thus improving the stability and reliability of anomaly analysis.

[0033] In one specific embodiment of this application, during the laser etching process of a quartz crystal, after the aforementioned comparison step, it is determined that the actual monitoring points numbered 3, 4, and 5 do not overlap with the corresponding etching monitoring nodes. The three-dimensional spatial coordinates of the actual monitoring points numbered 3, 4, and 5, and the three-dimensional spatial coordinates of the corresponding numbered etching monitoring nodes are extracted respectively, and the Euclidean distance between them is calculated to obtain deviation values ​​d3, d4, and d5. Subsequently, according to the numbering order of the monitoring nodes, the deviation values ​​d3, d4, and d5 are arranged sequentially to form a deviation value sequence [d3, d4, d5]. This sequence is used to characterize the directional deviation of the etching path within the corresponding segment.

[0034] In some embodiments of this application, the step of initially determining the degree of etching direction abnormality based on the deviation value includes: The deviation values ​​in the deviation value sequence are compared with the preset deviation thresholds in turn. The number of actual monitoring points whose deviation values ​​exceed the deviation thresholds is counted and recorded as the number of non-conforming points. The ratio of the number of non-conforming points to the total number of actual monitoring points is calculated and recorded as the abnormality ratio. The maximum deviation value among the number of defective items is counted, and the difference between the maximum deviation value and the deviation threshold is calculated. The degree of abnormality in the etching direction is preliminarily determined by the difference and the abnormality ratio. Specifically, a proportional limit value and a difference limit value are set. When the abnormality ratio is zero, the degree of abnormality in the etching direction is initially determined to be zero. When the abnormality ratio is greater than zero and less than or equal to the proportional limit value, and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a first degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is less than or equal to the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a third degree of abnormality. Zero is less than the first degree of abnormality, the first degree of abnormality is less than the second degree of abnormality, and the second degree of abnormality is less than the third degree of abnormality.

[0035] Understandably, by comparing each deviation value in the deviation value sequence with a pre-set deviation threshold, and introducing two evaluation dimensions—the anomaly ratio and the difference between the maximum deviation values—to make a preliminary judgment on the degree of anomaly in the etching direction, the risk of misjudgment caused by relying solely on a single deviation index can be avoided. The anomaly ratio reflects the distribution range and prevalence of etching direction deviations in the overall etching path, while the difference between the maximum deviation value and the deviation threshold characterizes the degree of the most severe local deviation. The two work together to ensure that the etching direction anomaly assessment considers both global consistency and local extreme cases. By setting proportional and difference thresholds and dividing the degree of etching direction anomaly into multiple ordered levels, a hierarchical and quantitative description of the anomaly degree can be achieved, avoiding ambiguity in anomaly judgment results. This facilitates subsequent control systems in adopting differentiated process adjustments or alarm strategies based on different anomaly levels, thereby improving the stability of the etching process and the precision of etching quality control.

[0036] In one specific embodiment of this application, during a single quartz crystal laser etching process, 20 actual monitoring points are set along the etching path. Deviation calculations show that 5 of these monitoring points have deviation values ​​exceeding a preset deviation threshold, resulting in a total of 5 non-conforming points. The anomaly ratio is calculated as 5 / 20, or 0.25. Furthermore, among these 5 non-conforming points, the maximum deviation value is 0.18 mm, while the deviation threshold is 0.10 mm, resulting in a difference of 0.08 mm. The preset ratio limit is 0.20, and the difference limit is 0.10 mm. Since the anomaly ratio is greater than the ratio limit and the difference is less than the difference limit, the degree of anomaly in the etching direction is preliminarily determined to be a second degree of anomaly.

[0037] In some embodiments of this application, adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain an anomaly assessment result includes: Obtain the maximum value of the rate of change of adjacent deviation values, and record it as the maximum rate of change; If the maximum rate of change is less than or equal to the preset rate of change threshold, it is determined that no adjustment is needed to the degree of abnormality in the etching direction; If the maximum rate of change is greater than the preset rate of change threshold, it is determined that the degree of abnormality in the etching direction needs to be adjusted.

[0038] Understandably, by calculating the rate of change of adjacent deviation values ​​in the deviation value sequence and extracting the maximum rate of change as the judgment criterion, the changing trend and abrupt changes of the etching direction deviation along the path can be reflected. Compared to focusing only on the magnitude of the deviation value, introducing the rate of change index can identify whether the deviation value increases rapidly or fluctuates drastically between adjacent monitoring points, thus avoiding missing anomalies when the overall deviation level is not high but a sharp shift occurs in the local direction. When the maximum rate of change is less than or equal to the preset rate of change threshold, it indicates that the etching direction deviation changes smoothly along the path, and the degree of anomaly is continuous and controllable, requiring no correction to the preliminary judgment result. When the maximum rate of change is greater than the rate of change threshold, it indicates that there may be a sudden shift or unstable factor in the etching direction. By triggering the anomaly degree adjustment mechanism, the sensitivity and accuracy of the anomaly assessment results to the dynamic characteristics of the etching process can be improved, thus providing a more reliable basis for graded early warning.

[0039] In one specific embodiment of this application, after the quartz crystal laser etching is completed, a sequence of deviation values ​​ordered by number is obtained as [0.05mm, 0.06mm, 0.07mm, 0.15mm, 0.16mm]. Based on the changing trends of adjacent deviation values, the rates of change for adjacent deviation values ​​are calculated to be 0.2, 0.1667, 1.1429, and 0.0667, respectively, with the maximum rate of change being 1.1429. A preset threshold for the rate of change is 0.05. Since this maximum rate of change is greater than the threshold, it is determined that the degree of abnormality in the etching direction needs to be adjusted. Conversely, if the deviation value sequence is [0.05mm, 0.06mm, 0.065mm, 0.07mm, 0.075mm], the corresponding maximum rate of change is 0.2, and the threshold for the rate of change is 0.5. Therefore, it is determined that no adjustment to the degree of abnormality in the etching direction is needed, and the initial degree of abnormality is maintained as the final abnormality assessment result.

[0040] In some embodiments of this application, when adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain an anomaly assessment result, the method further includes: Calculate the difference between the maximum rate of change and the preset rate of change threshold, and record it as the rate of change difference; A difference range is set. If the difference in the rate of change is less than the lower limit of the difference range, the degree of abnormality in the etching direction is adjusted by a first adjustment coefficient. If the difference in the rate of change is within the difference range, the degree of abnormality in the etching direction is adjusted by a second adjustment coefficient. If the difference in the rate of change is greater than the upper limit of the difference range, the degree of abnormality in the etching direction is adjusted by a third adjustment coefficient. The adjustment coefficient ranges from 1 to the first adjustment coefficient to the second adjustment coefficient to the third adjustment coefficient; the anomaly assessment result is the product of the adjustment coefficient and the degree of anomaly in the etching direction.

[0041] Understandably, by dynamically adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values, the impact of sudden shifts or local anomalies during etching can be accurately reflected. Using a range of differences and different adjustment coefficients, graded corrections can be achieved for deviation changes of varying degrees, ensuring that the anomaly assessment results retain the continuity of the overall trend while remaining sensitive to local anomalies, thereby improving the accuracy and reliability of anomaly early warning. Furthermore, by defining the final anomaly assessment result as the product of the adjustment coefficient and the initial anomaly degree, the quantification and adjustability of etching direction anomaly assessment are achieved.

[0042] In one specific embodiment, after the quartz crystal etching is completed, the resulting deviation value sequence is sorted by number, and the maximum adjacent deviation value change rate is calculated to be 0.8. The preset change rate threshold is 0.5. Therefore, the maximum change rate exceeds the threshold, and anomaly adjustment is required. Assuming the lower limit of the difference range is 0.1 and the upper limit is 0.3, and the first, second, and third adjustment coefficients are 1.1, 1.3, and 1.5 respectively, then the difference between this change rate and the threshold falls above the upper limit. The third adjustment coefficient of 1.5 is selected to correct the initial anomaly level of 0.6, resulting in a final anomaly assessment result of 0.9.

[0043] In some embodiments of this application, the step of performing graded anomaly warning based on anomaly assessment results includes: Abnormal assessment results are classified and determined by pre-defined assessment ranges; When the anomaly assessment result is zero, the anomaly level is determined to be zero, and no anomaly warning is issued. When the abnormal assessment result is greater than zero and less than the minimum value of the assessment range, the abnormality level is determined to be Level 1; when the abnormal assessment result is within the range of the assessment range, the abnormality level is determined to be Level 2; when the abnormal assessment result is greater than the maximum value of the assessment range, the abnormality level is determined to be Level 3; the abnormality warning levels from low to high are Level 0, Level 1, Level 2 and Level 3.

[0044] Understandably, by implementing tiered anomaly warnings based on anomaly assessment results, etching direction anomalies can be quantified into different levels, allowing operators to quickly assess the severity of the problem and take appropriate measures. The tiered warning method can distinguish between minor and major deviations, enabling differentiated responses. This avoids unnecessary alarms for acceptable minor deviations while ensuring timely issuance of high-level warnings for significant deviations, improving reliability and safety. Furthermore, the tiered classification, from level zero to three, is logically clear and facilitates programming implementation and visualization within automated monitoring systems.

[0045] In one specific embodiment, if the calculated anomaly assessment result is 0.35, and the preset assessment range is 0.3-0.7, then the anomaly assessment result falls within the assessment range, and the anomaly level is determined to be Level 2. If the anomaly assessment result is 0.1, which is lower than the minimum value of the assessment range, then the anomaly level is determined to be Level 1. If the anomaly assessment result is 0, then the anomaly level is determined to be Level 0, and no anomaly warning is issued. When the anomaly assessment result reaches 0.8, which is higher than the maximum value of the assessment range, then the anomaly level is determined to be Level 3, and the highest level warning is triggered. Through this hierarchical method, flexible and accurate warning processing can be performed for different degrees of etching direction anomalies.

[0046] On the other hand, see Figure 2 As shown, this application also provides a quartz crystal laser etching direction anomaly early warning system for applying the above-mentioned quartz crystal laser etching direction anomaly early warning method, including: The node deployment module is used to deploy several etching monitoring nodes on the quartz crystal along the specified etching path of the quartz crystal; The acquisition module is used to acquire the actual trajectory of the quartz crystal after etching is completed, and to deploy the same number of actual monitoring points on the actual trajectory as the number of etching monitoring nodes. The preliminary anomaly determination module is used to compare each actual monitoring point with the corresponding etching monitoring node in turn to determine whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, the deviation value of each actual monitoring point is calculated, the deviation values ​​are constructed into a deviation value sequence, and the degree of anomaly in the etching direction is preliminarily determined based on the deviation values. The anomaly warning module is used to calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of anomaly in the etching direction according to the rate of change of adjacent deviation values, obtain the anomaly assessment result, and perform graded anomaly warning based on the anomaly assessment result.

[0047] Understandably, the node deployment module can precisely deploy etching monitoring nodes along the specified etching path, providing reliable reference points for subsequent trajectory acquisition and deviation analysis. This enables the system to track spatial position changes during the etching process with high precision. The acquisition module acquires the actual etching trajectory in real time and deploys corresponding monitoring points along the trajectory, ensuring a one-to-one correspondence between actual data and the preset path, guaranteeing data integrity and comparability. The preliminary anomaly judgment module compares the actual monitoring points with the etching monitoring nodes, calculates the deviation value, and constructs a deviation value sequence. This quantifies the etching deviation, allowing for a preliminary assessment of the anomaly level and providing foundational data for subsequent adjustments. The anomaly warning module further utilizes the rate of change of adjacent deviation values ​​in the deviation value sequence to dynamically adjust the preliminary anomaly level and provides graded warnings based on the adjusted anomaly assessment results. This differentiates responses to minor and severe deviations, improving the accuracy and reliability of etching direction anomaly monitoring, and enabling rapid identification of sudden deviations and local anomalies, avoiding omissions and false alarms. This provides a scientific basis for optimizing production processes and ensuring safety control. Meanwhile, through tiered anomaly warnings, operators can intuitively understand the severity of anomalies and take timely measures, thereby achieving an organic combination of automated monitoring and intelligent early warning, improving the system's practicality and engineering operability.

[0048] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program goods. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program goods embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0049] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program goods according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0050] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0051] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0052] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for early warning of abnormal laser etching direction in quartz crystals, characterized in that, include: Several etching monitoring nodes are set up on the quartz crystal along the specified etching path; Obtain the actual trajectory of the quartz crystal after etching, and deploy the same number of actual monitoring points as the etching monitoring nodes on the actual trajectory; By comparing each actual monitoring point with the corresponding etching monitoring node in turn, it is determined whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, the deviation value of each actual monitoring point is calculated, the deviation values ​​are constructed into a deviation value sequence, and the degree of abnormality of the etching direction is initially determined based on the deviation values. Calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of abnormality in the etching direction according to the rate of change of adjacent deviation values, obtain the abnormality assessment result, and perform graded abnormality warning based on the abnormality assessment result.

2. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 1, characterized in that, When setting up several etching monitoring nodes on the quartz crystal along the specified etching path, it includes: The etching monitoring nodes include the start and end points of a specified path, and the spacing between adjacent etching monitoring nodes is the same.

3. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 2, characterized in that, Before sequentially comparing each actual monitoring point with its corresponding etching monitoring node to determine if there is a spatial coordinate deviation, the process includes: Connect the starting point of the etching monitoring node with its adjacent points to form a baseline; connect the starting point of the actual monitoring point with its adjacent points to form a calibration line. Align the baseline with the calibration line to determine if there is any spatial coordinate deviation at the actual monitoring points of the actual trajectory.

4. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 3, characterized in that, The step of sequentially comparing each actual monitoring point with the corresponding etching monitoring node to determine whether there is a spatial coordinate deviation at the actual monitoring point includes: The actual monitoring points and etching monitoring nodes were numbered sequentially. Rotate the calibration line around the starting point until it coincides with the baseline, and compare whether the actual monitoring point with the same number coincides with the etching monitoring node. If all points overlap, it is determined that there is no spatial coordinate deviation in the actual monitoring points. If they do not overlap, it is determined that there is a spatial coordinate deviation in the actual monitoring point, and the non-overlapping actual monitoring point and the corresponding etching monitoring node number are marked.

5. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 4, characterized in that, The calculation of the deviation value for each actual monitoring point includes: Based on the marked non-overlapping actual monitoring points and the corresponding etching monitoring node numbers, the spatial coordinates of the non-overlapping actual monitoring points and the corresponding etching monitoring nodes are extracted respectively. Calculate the Euclidean distance between the actual monitoring point and the etching monitoring node with the same number as the deviation value of the monitoring point; Arrange the deviation values ​​of all non-coincident points in ascending order of their numbers to form a deviation value sequence.

6. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 5, characterized in that, When initially determining the degree of abnormality in the etching direction based on the deviation value, the following are included: The deviation values ​​in the deviation value sequence are compared with the preset deviation thresholds in turn. The number of actual monitoring points whose deviation values ​​exceed the deviation thresholds is counted and recorded as the number of non-conforming points. The ratio of the number of non-conforming points to the total number of actual monitoring points is calculated and recorded as the abnormality ratio. The maximum deviation value among the number of defective items is counted, and the difference between the maximum deviation value and the deviation threshold is calculated. The degree of abnormality in the etching direction is preliminarily determined by the difference and the abnormality ratio. Specifically, a proportional limit value and a difference limit value are set. When the abnormality ratio is zero, the degree of abnormality in the etching direction is initially determined to be zero. When the abnormality ratio is greater than zero and less than or equal to the proportional limit value, and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a first degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is less than or equal to the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is less than or equal to the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a second degree of abnormality. When the abnormality ratio is greater than the proportional limit value and the difference is greater than the difference limit value, the degree of abnormality in the etching direction is initially determined to be a third degree of abnormality. Zero is less than the first degree of abnormality, the first degree of abnormality is less than the second degree of abnormality, and the second degree of abnormality is less than the third degree of abnormality.

7. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 1, characterized in that, When adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain the anomaly assessment result, the following steps are included: Obtain the maximum value of the rate of change of adjacent deviation values, and record it as the maximum rate of change; If the maximum rate of change is less than or equal to the preset rate of change threshold, it is determined that no adjustment is needed to the degree of abnormality in the etching direction; If the maximum rate of change is greater than the preset rate of change threshold, it is determined that the degree of abnormality in the etching direction needs to be adjusted.

8. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 7, characterized in that, When adjusting the degree of etching direction anomaly based on the rate of change of adjacent deviation values ​​to obtain the anomaly assessment result, the method further includes: Calculate the difference between the maximum rate of change and the preset rate of change threshold, and record it as the rate of change difference; A difference range is set. If the difference in the rate of change is less than the lower limit of the difference range, the degree of abnormality in the etching direction is adjusted by a first adjustment coefficient. If the difference in the rate of change is within the difference range, the degree of abnormality in the etching direction is adjusted by a second adjustment coefficient. If the difference in the rate of change is greater than the upper limit of the difference range, the degree of abnormality in the etching direction is adjusted by a third adjustment coefficient. The adjustment coefficient ranges from 1 to the first adjustment coefficient to the second adjustment coefficient to the third adjustment coefficient; the anomaly assessment result is the product of the adjustment coefficient and the degree of anomaly in the etching direction.

9. The method for early warning of abnormal laser etching direction in quartz crystals according to claim 1, characterized in that, The step of issuing graded anomaly warnings based on anomaly assessment results includes: Abnormal assessment results are classified and determined by pre-defined assessment ranges; When the anomaly assessment result is zero, the anomaly level is determined to be zero, and no anomaly warning is issued. When the abnormal assessment result is greater than zero and less than the minimum value of the assessment range, the abnormality level is determined to be Level 1; when the abnormal assessment result is within the range of the assessment range, the abnormality level is determined to be Level 2; when the abnormal assessment result is greater than the maximum value of the assessment range, the abnormality level is determined to be Level 3; the abnormality warning levels from low to high are Level 0, Level 1, Level 2 and Level 3.

10. A quartz crystal laser etching direction anomaly early warning system, used to apply the quartz crystal laser etching direction anomaly early warning method as described in any one of claims 1-9, characterized in that, include: The node deployment module is used to deploy several etching monitoring nodes on the quartz crystal along the specified etching path of the quartz crystal; The acquisition module is used to acquire the actual trajectory of the quartz crystal after etching is completed, and to deploy the same number of actual monitoring points on the actual trajectory as the number of etching monitoring nodes. The preliminary anomaly determination module is used to compare each actual monitoring point with the corresponding etching monitoring node in turn to determine whether there is a spatial coordinate deviation of the actual monitoring point. If there is a deviation, the deviation value of each actual monitoring point is calculated, the deviation values ​​are constructed into a deviation value sequence, and the degree of anomaly in the etching direction is preliminarily determined based on the deviation values. The anomaly warning module is used to calculate the rate of change of adjacent deviation values ​​in the deviation value sequence, adjust the degree of anomaly in the etching direction according to the rate of change of adjacent deviation values, obtain the anomaly assessment result, and perform graded anomaly warning based on the anomaly assessment result.

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