OLED display method and system with wide temperature range adaptive brightness compensation

Abstract

The application discloses a wide-temperature-range self-adaptive brightness compensation OLED display method and system, and belongs to the field of temperature-range brightness compensation. The method comprises the following steps: obtaining a first detection excitation, detecting a target transistor to obtain a first electrical detection signal; obtaining a second detection excitation, detecting a target OLED to obtain a temperature detection signal; obtaining a target anode voltage and recording the second electrical detection signal; forming an index digital quantity based on the first electrical detection signal, the temperature detection signal and the second electrical detection signal, and matching a composite compensation coefficient; obtaining target gray scale data and performing compensation operation to obtain a digital driving signal; converting the digital driving signal into target analog data voltage and writing the target analog data voltage into a circuit to control the target transistor to perform self-adaptive brightness compensation. The application solves the technical problem that the existing display technology lacks an effective overheating protection mechanism, so that display pictures are prone to uneven brightness, color deviation and flickering, and the service life is shortened.

Description

Technical Field

[0001] This invention relates to the field of temperature-range brightness compensation, and specifically to an OLED display method and system for wide-temperature-range adaptive brightness compensation. Background Technology

[0002] As OLED display technology gradually expands into fields such as automotive, industrial control, and outdoor displays, it needs to operate in extreme wide-temperature environments for extended periods. However, current OLED temperature detection generally uses panel-level thermistors, which cannot achieve pixel-level detection accuracy. Furthermore, various detection processes require independent display time slots, reducing the video display frame rate. Under extreme high-temperature conditions above 60°C, the lack of effective device overheat protection mechanisms can easily lead to irreversible thermal damage to organic materials, resulting in defects such as uneven brightness, color shift, and flickering in the display. This significantly shortens the device's lifespan and makes it difficult to meet the needs of high-reliability, wide-temperature-range applications such as automotive. Summary of the Invention

[0003] This application provides a wide-temperature-range adaptive brightness compensation OLED display method and system, aiming to solve the technical problem that existing display technologies lack an effective overheat protection mechanism, which makes the display screen prone to uneven brightness, color deviation, and flicker, thus leading to a shortened service life.

[0004] In view of the above problems, this application provides an OLED display method and system with wide temperature range adaptive brightness compensation.

[0005] The first aspect disclosed in this application provides a wide-temperature-range adaptive brightness compensation OLED display method, the method comprising: A first detection stimulus is acquired, and the target transistor corresponding to the target pixel in the target OLED is detected based on the first detection stimulus to obtain a first electrical detection signal; a second detection stimulus is acquired, and the target OLED is detected based on the second detection stimulus to obtain a temperature detection signal; the target anode voltage of the target OLED is acquired during the light emission stage and recorded as the second electrical detection signal; an index digital quantity is formed based on the first electrical detection signal, the temperature detection signal, and the second electrical detection signal, and the composite compensation coefficient corresponding to the index digital quantity is matched in a predetermined multidimensional lookup table; the target grayscale data of the target video is acquired, and the target grayscale data is compensated using the composite compensation coefficient to obtain a digital driving signal; the digital driving signal is converted into a target analog data voltage and written into the circuit of the target pixel to control the target transistor to perform adaptive brightness compensation.

[0006] Another aspect of this application discloses a wide-temperature-range adaptive brightness compensation OLED display system, the system comprising: An excitation module is used to acquire a first detection excitation and detect the target transistor corresponding to the target pixel in the target OLED based on the first detection excitation to obtain a first electrical detection signal; a temperature module is used to acquire a second detection excitation and detect the target OLED based on the second detection excitation to obtain a temperature detection signal; an electrical module is used to acquire the target anode voltage of the target OLED during the light emission stage, denoted as the second electrical detection signal; an indexing module is used to form an index digital quantity based on the first electrical detection signal, the temperature detection signal, and the second electrical detection signal, and match the composite compensation coefficient corresponding to the index digital quantity in a predetermined multidimensional lookup table; a compensation module is used to acquire the target grayscale data of the target video and perform compensation calculation on the target grayscale data with the composite compensation coefficient to obtain a digital driving signal; and a control module is used to convert the digital driving signal into a target analog data voltage and write it into the circuit of the target pixel, and control the target transistor to perform adaptive brightness compensation.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages: By time-division multiplexing the target video line-by-line scanning timing, a diode connection structure is constructed during the frame blanking period to complete the detection of the driving transistor's electrical parameters. During the light emission stage, microsecond-level narrow pulse current pulses are applied simultaneously to achieve OLED pixel-level junction temperature detection and anode voltage aging detection. The entire process does not require additional display time slots. At the same time, a three-dimensional multidimensional lookup table is constructed with discrete standard junction temperature value as the first index and discrete grayscale current level as the second index. Three independent compensation components of OLED aging, transistor degradation, and temperature deviation are weighted and fused to generate composite compensation coefficients. A standard temperature value priority matching mechanism is set for the first temperature threshold of 60℃ to improve the response speed of extreme high temperature compensation. A global maximum grayscale current reference value linearly decreases for the second temperature threshold of 80℃ to achieve overheat protection. Finally, pixel-level adaptive brightness accuracy compensation is achieved across the entire temperature range, improving the working stability and lifespan of OLED devices.

[0008] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0009] Figure 1 This application provides a flowchart illustrating a wide-temperature-range adaptive brightness compensation OLED display method according to an embodiment of the present application. Figure 2 This application provides a schematic diagram of the structure of an OLED display system with wide temperature range adaptive brightness compensation.

[0010] Explanation of reference numerals in the attached diagram: Excitation module 11, Temperature module 12, Electrical module 13, Index module 14, Compensation module 15, Control module 16. Detailed Implementation

[0011] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided below.

[0012] The overall concept of the technical solution provided in this application is as follows: This application provides a wide-temperature-range adaptive brightness compensation OLED display method and system. By time-division multiplexing the target video line-by-line scanning timing, the target transistor is constructed as a diode connection structure during the frame blanking period to complete the electrical parameter detection. During the light emission stage, microsecond-level narrow pulse current pulses are applied simultaneously to achieve pixel-level junction temperature detection and anode voltage aging detection. No additional display time slots are required throughout the process. At the same time, a three-dimensional multidimensional lookup table is constructed with discrete standard junction temperature value as the first index and discrete grayscale current level as the second index. A composite compensation coefficient is generated by weighted summation and fusion of three independent compensation components: OLED aging, transistor degradation, and temperature deviation. A standard temperature value priority matching mechanism is set for the first temperature threshold of 60°C to improve the compensation response speed at extreme high temperatures. A global maximum grayscale current reference value linear reduction mechanism is set for the second temperature threshold of 80°C to achieve overheat protection. Ultimately, the working stability and service life of the OLED display system are improved.

[0013] After introducing the basic principles of this application, various non-limiting embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0014] Example 1, as Figure 1 As shown in the figure, this application provides an OLED display method with wide temperature range adaptive brightness compensation, the method including: S100: Obtain the first detection stimulus, and detect the target transistor corresponding to the target pixel in the target OLED based on the first detection stimulus to obtain the first electrical detection signal.

[0015] Specifically, when the timing trigger signal of the first detection excitation arrives, the switching transistor in the pixel circuit first acts, disconnecting the target transistor, namely the core driving thin-film transistor (TFT) in the OLED active matrix pixel driving circuit, which acts as a current source to control the magnitude of the light-emitting current flowing through the OLED. Its key electrical parameters, such as threshold voltage Vth and carrier mobility μ, will drift significantly due to the inherent discreteness of semiconductor manufacturing process, thermal stress and charge injection aging during long-term operation, and wide-temperature range environmental temperature fluctuations. The electrical connection between the TFT and the target OLED anode is completely cut off, thus eliminating the interference of OLED light-emitting characteristics on the measurement results of transistor electrical parameters.

[0016] Next, the gate and drain of the target transistor are electrically shorted by a switching transistor to form a diode connection structure. This is a classic standard circuit structure for high-precision detection of the electrical parameters of a MOSFET. This structure forces the TFT to operate in the saturation region. At this time, the drain current of the transistor is determined only by its own threshold voltage and carrier mobility, which can completely eliminate the negative impact of non-target factors such as channel length modulation effect and power supply voltage fluctuation on detection accuracy. Subsequently, a predetermined DC bias voltage, which has been pre-calibrated at the chip level and covers the entire operating voltage range of the driving transistor, is applied to the gate of the diode connection structure. After the circuit reaches a steady state, the drain current value flowing through the target transistor is accurately acquired by the on-chip integrated high-precision current detection circuit. This current value is the first electrical detection signal, and its value satisfies the saturation region MOSFET current formula with respect to the threshold voltage and carrier mobility of the target transistor. ; in, This is the drain current, which is the operating current from the drain to the source of the MOSFET. For carrier mobility, This refers to the capacitance per unit area of ​​the gate oxide layer, specifically the capacitance value per unit area of ​​the oxide layer between the gate and channel of a MOS transistor. The width-to-length ratio is given by W, where W is the channel width and L is the channel length. This is the gate voltage, i.e., the gate bias voltage of the MOSFET relative to ground. The threshold voltage is the minimum gate voltage required for the MOSFET to just turn on and form a conductive channel. The overdrive voltage, also called the effective gate voltage, represents the excess bias voltage exceeding the turn-on threshold. 0.5 is the square-law characteristic coefficient of the saturation region. This formula can directly quantify the current real-time electrical characteristics of the driving transistor.

[0017] S200: Obtain a second detection stimulus, and perform detection on the target OLED based on the second detection stimulus to obtain a temperature detection signal.

[0018] Specifically, when the timing trigger signal of the second detection excitation arrives, a second detection excitation is applied to the target OLED, which is itself an organic light-emitting diode device with typical PN junction diode electrical characteristics. Its forward voltage exhibits a stable linear negative correlation with the junction temperature, which is the core physical basis for achieving pixel-level temperature detection. This second detection excitation is a constant narrow pulse width current pulse that has been pre-calibrated at the chip level. The pulse width is strictly controlled at the microsecond level or below, which makes the target OLED forward conduction as a target diode connection structure. The target diode connection structure is the diode device structure of the OLED itself. Temperature detection can be performed using its PN junction characteristics without the need for additional circuit construction. After the current pulse reaches a steady state, the forward voltage drop across the target OLED is accurately acquired by the on-chip integrated high-precision differential voltage detection circuit. This voltage value is the temperature detection signal. Its value and the real-time junction temperature of the target OLED satisfy the linear correspondence pre-calibrated in a standard temperature chamber and can be directly converted into precise junction temperature data with single-pixel accuracy.

[0019] S300: During the light emission stage, the target anode voltage of the target OLED is acquired and recorded as the second electrical detection signal.

[0020] Specifically, the process is executed synchronously during the light-emitting phase of each frame of the target video. This phase, where the OLED pixels receive the analog data voltage converted from the digital drive signal obtained through prior compensation, illuminate normally, and output the corresponding grayscale brightness, constitutes the majority of the video frame cycle. Unlike non-display preparation phases such as threshold voltage detection and mobility detection, this phase does not require a dedicated detection time slot. Once the target transistor has stably injected a constant target drive current into the target OLED, and the OLED's light-emitting state has reached a steady state, a high-input-impedance, millivolt-level high-precision voltage detection circuit integrated on-chip is directly connected to the target anode of the target OLED—the positive electrode in the OLED device connected to the drain of the driving transistor. The voltage value is determined by the output current of the driving transistor and the forward conduction characteristics of the OLED itself. The stable voltage value of the anode node relative to the system reference ground is collected non-invasively, and this voltage value is the second electrical detection signal. Since the forward conduction voltage of the OLED device exhibits an inherent aging characteristic of monotonically increasing with the degradation of organic light-emitting materials and the rise of the carrier injection barrier during long-term use, and under the premise of constant driving current, the change in anode voltage is strictly positively correlated with the aging degree of the OLED, this signal can accurately and directly quantify the current true aging state of the target OLED, while effectively eliminating the interference of driving transistor electrical characteristic drift and ambient temperature changes on the aging detection results.

[0021] S400: Based on the first electrical detection signal, the temperature detection signal and the second electrical detection signal, an index digital quantity is formed, and the composite compensation coefficient corresponding to the index digital quantity is matched in a predetermined multidimensional lookup table.

[0022] Specifically, the first electrical detection signal (driving transistor drain current), the second electrical detection signal (OLED junction temperature corresponding to forward voltage), and the third electrical detection signal (OLED anode voltage) are first subjected to low-pass filtering for noise reduction and linear quantization. The continuous analog detection values ​​are then converted into a pre-defined multi-dimensional lookup table. This table is a three-dimensional data table generated in advance within the full temperature range of -40℃ to 85℃ by batch calibration of OLED panel brightness characteristics under different process batches, different aging levels, and different gray-scale currents. It uses multiple discrete standard junction temperature values ​​as the first index, multiple discrete gray-scale current levels as the second index, and transistor current value, OLED temperature value, and OLED anode voltage as the core recording fields. All data is calibrated and solidified at the chip level, enabling nanosecond-level fast addressing and matching of discrete digital quantities with matching index bit widths.

[0023] Then, according to the preset bit allocation rules, the three quantized digital values ​​are concatenated into a unique index digital value. The index digital value is used to accurately locate the binary code of the corresponding compensation record in the multidimensional lookup table. Typically, the temperature detection signal is allocated to the high bit to give priority to wide temperature range compensation, the transistor current signal is allocated to the middle bit, and the anode voltage signal is allocated to the low bit. At the same time, redundant bits are reserved for subsequent expansion and upgrade of the lookup table.

[0024] Next, the on-chip integrated high-speed addressing circuit uses the index digital value as the address pointer to perform parallel addressing and matching in a predetermined multidimensional lookup table. If the index digital value completely matches the index of a record in the lookup table, the three reference compensation values ​​corresponding to that record are directly extracted. If there is an index deviation, the reference compensation value closest to the actual working condition is calculated using bilinear interpolation. At the same time, when the current junction temperature reflected by the temperature detection signal exceeds the preset first temperature threshold, the system will automatically skip the conventional interpolation process and prioritize calling all compensation references corresponding to the standard temperature value with the smallest deviation from the current junction temperature in the lookup table to improve the response speed under extreme temperatures.

[0025] Then, based on the extracted or interpolated benchmark compensation value, the first compensation component, which corresponds to the aging degree of the OLED itself, is calculated. It is calculated from the difference between the second electrical detection signal and the standard anode voltage of a brand new OLED in the lookup table, and is used to offset the brightness decay caused by the degradation of organic materials. The second compensation component, which corresponds to the degradation degree of the electrical characteristics of the driving transistor, is calculated from the difference between the first electrical detection signal and the standard current value of a brand new transistor in the lookup table, and is used to correct the current deviation caused by threshold voltage drift and mobility decay. The third compensation component, which corresponds to the temperature deviation compensation coefficient of the OLED from the standard operating temperature range of 25°C, is calculated from the difference between the temperature detection signal and the standard temperature benchmark value, and is used to compensate for the nonlinear change of luminous efficiency over a wide temperature range.

[0026] Finally, the three compensation components are weighted and summed according to the weight coefficients obtained through orthogonal experiment optimization to obtain the final composite compensation coefficient. This coefficient can simultaneously cover the combined impact of three independent factors on brightness: transistor degradation, OLED aging, and temperature fluctuation.

[0027] S500: Acquire the target grayscale data of the target video, and perform compensation calculation on the target grayscale data using the composite compensation coefficient to obtain a digital driving signal.

[0028] Specifically, the system first receives the target video stream from the main control chip via the high-speed video input interface of the display driver chip. After decoding, deinterlacing, color gamut conversion, and gamma preprocessing, it extracts the target grayscale data corresponding to each frame, line, and pixel. This data represents the unsigned integer digital signal characterizing the expected output brightness level of each pixel, typically with a bit width of 8, 10, or 12 bits, corresponding to 256, 1024, and 4096 brightness levels, respectively. The value of this signal corresponds to the theoretical luminous intensity of the OLED using a pre-calibrated gamma function and is the core raw data determining the display effect. This data is cached in the on-chip dual-port line buffer memory, enabling parallel pipeline processing of detection operations and video output to avoid screen stuttering. When the target grayscale data is read from the line buffer in scanning order, it is immediately compared with the complex data corresponding to the same pixel coordinates generated in the previous steps. The combined compensation coefficient integrates dimensionless correction coefficients affecting three independent factors: threshold voltage drift and mobility decay of the driving transistor, aging of OLED organic materials, and wide-range temperature fluctuations. A value greater than 1 indicates that the driving current needs to be increased to compensate for brightness decay, while a value less than 1 indicates that the driving current needs to be reduced to prevent excessive brightness or overheating. A pixel-by-pixel fixed-point multiplication compensation operation is performed. During the operation, a dynamic reference coefficient is simultaneously introduced. This is a global adjustment coefficient dynamically generated by the system based on the current maximum junction temperature of the panel. When the current junction temperature reflected by the temperature detection signal does not exceed the preset second temperature threshold, the dynamic reference coefficient is always 1. When the junction temperature exceeds the second temperature threshold, the dynamic reference coefficient decreases linearly with the increase in junction temperature. This is used to simultaneously reduce the maximum grayscale current reference value input to all pixel circuits, achieving full-panel-level overheating and power consumption limitation. The complete calculation formula is: Digital drive signal = saturation cutoff (target grayscale data × composite compensation coefficient × dynamic reference coefficient). The saturation truncation mechanism automatically truncates the result that exceeds the upper limit of the digital drive signal bit width after compensation to the maximum value, and clamps the result that is below the lower limit to 0, completely avoiding brightness overflow, black screen or grayscale jump phenomenon; the result obtained after the above calculation is the digital drive signal, whose bit width is strictly matched with the input bit width of the back-end integrated digital-to-analog converter, and can directly control the analog data voltage of the corresponding amplitude output by the DAC.

[0029] S600: Convert the digital driving signal into the target analog data voltage and write it into the circuit of the target pixel to control the target transistor to perform adaptive brightness compensation.

[0030] Specifically, firstly, the digital drive signal, after saturation truncation—that is, the binary digital quantity that is strictly matched with the input bit width of the back-end digital-to-analog converter—is then subjected to three-factor composite compensation to precisely correspond to the ideal drive current required to offset all deviations of the target pixel. This value is then sent to the high-speed digital-to-analog converter integrated within the display driver chip. This is a core circuit that converts discrete digital signals into continuous analog voltage signals. It employs a segmented resistor string architecture to ensure conversion accuracy of 10 bits or higher and microsecond-level conversion speed, enabling it to map each digital drive signal without distortion to a unique corresponding analog voltage value, i.e., the target analog data voltage. Due to its high... The pixel circuits of high-resolution OLED panels contain a large number of capacitive loads. The voltage driving capability directly output by the DAC is insufficient, which can lead to problems such as slow write speed, inaccurate voltage establishment, and crosstalk between rows. Therefore, the target analog data voltage output by the DAC is immediately sent to a unity-gain buffer, a voltage follower circuit with a constant voltage gain of 1. It has extremely high input impedance and extremely low output impedance, which can significantly enhance the current driving capability of the signal without changing the voltage amplitude. At the same time, it completely isolates the mutual interference between the DAC output stage and the pixel load, ensuring the purity of the voltage signal and performing driving capability enhancement processing.

[0031] Subsequently, during the pixel writing stage of the target video's line-by-line scanning sequence, pixel circuit resources are strictly time-division multiplexed with stages such as threshold voltage detection, temperature detection, and aging detection, without occupying normal light-emitting display time. The corresponding row's selection switch is turned on, and the buffered and enhanced target analog data voltage is rapidly written into the target pixel circuit's storage capacitor at nanosecond speeds. The storage capacitor, acting as a voltage holding element in the pixel circuit, maintains a stable voltage value throughout the entire frame period, ensuring that the target transistor receives a constant gate control voltage throughout the entire light-emitting stage, thus preventing brightness flickering. The stable voltage across the storage capacitor is applied to the target... The target transistor, or the core driving TFT in the pixel driving circuit, has a gate-source voltage Vgs that has a strict functional relationship with the drain output current. Based on the saturation current characteristics of the MOS transistor, the target transistor outputs a constant driving current that precisely corresponds to the target analog data voltage. This current flows through the target OLED, causing it to emit a brightness that perfectly matches the expected grayscale. This precisely offsets the brightness deviation caused by three independent factors: threshold voltage drift and mobility decay of the driving transistor, aging of the OLED organic material, and wide-range temperature fluctuations, thus completing adaptive brightness compensation. The entire writing process is strictly synchronized with the video scanning timing, and is executed line by line and pixel by pixel.

[0032] Furthermore, in the method provided in the application embodiment, obtaining a first detection stimulus and detecting the target transistor corresponding to the target pixel in the target OLED based on the first detection stimulus to obtain a first electrical detection signal includes: based on the first detection stimulus, disconnecting the connection between the target transistor in the circuit of the target pixel and the target OLED, and connecting the gate and drain of the target transistor to form a diode connection structure; applying a predetermined voltage to the gate of the diode connection structure, measuring the current value flowing through the target transistor, and recording it as the first electrical detection signal.

[0033] Specifically, when the trigger signal of the first detection excitation arrives, the first switch in the pixel circuit is activated first, disconnecting the target transistor, namely the core driving thin film transistor (TFT) in the OLED active matrix pixel driving circuit, which acts as a current source to control the magnitude of the light-emitting current flowing through the OLED. Its key electrical parameters, such as threshold voltage Vth and carrier mobility μ, will drift significantly due to the inherent discreteness of semiconductor manufacturing process, thermal stress and charge injection aging during long-term operation, and wide-temperature range environmental temperature fluctuations. The electrical connection between the target OLED anode and the transistor eliminates the interference of OLED light-emitting characteristics on the measurement results of transistor electrical parameters.

[0034] Next, the second switch in the pixel circuit is turned on, electrically shorting the gate and drain of the target transistor to form a diode connection structure. This is a classic standard circuit structure for high-precision detection of MOSFET electrical parameters. This structure forces the TFT to work in the saturation region. At this time, the drain current of the transistor is determined only by its own threshold voltage and carrier mobility. It can completely eliminate the negative impact of non-target factors such as channel length modulation effect and power supply voltage fluctuation on detection accuracy. This is the core circuit design of this scheme to achieve high-precision detection of transistor parameters.

[0035] Subsequently, a predetermined DC bias voltage, pre-calibrated at the chip level and covering the entire operating voltage range of the driving transistor, is applied to the gate of the diode connection structure. After the circuit reaches a steady state, the drain current value flowing through the target transistor is accurately acquired by the on-chip integrated nanoampere-level high-precision current detection circuit. This current value is the first electrical detection signal, and its value satisfies the saturation region MOS transistor current formula with respect to the threshold voltage and carrier mobility of the target transistor. ; in, This is the drain current, which is the operating current from the drain to the source of the MOSFET. For carrier mobility, This refers to the capacitance per unit area of ​​the gate oxide layer, specifically the capacitance value per unit area of ​​the oxide layer between the gate and channel of a MOS transistor. The width-to-length ratio is given by W, where W is the channel width and L is the channel length. This is the gate voltage, i.e., the gate bias voltage of the MOSFET relative to ground. The threshold voltage is the minimum gate voltage required for the MOSFET to just turn on and form a conductive channel. The overdrive voltage, also called the effective gate voltage, represents the excess bias voltage exceeding the turn-on threshold. 0.5 is the square-law characteristic coefficient in the saturation region. , All are fixed process parameters. Since the voltage is known, this current value can be directly quantified to characterize the current real-time electrical characteristics of the driving transistor.

[0036] Furthermore, in the method provided in the application embodiment, under the second detection excitation, a constant narrow pulse width current pulse is applied to turn on the target diode connection structure to obtain the temperature detection signal; wherein, the width of the constant narrow pulse width current pulse is less than or equal to the microsecond level.

[0037] Specifically, when the trigger signal of the second detection excitation arrives, the second detection excitation is a timing signal and a matching electrical excitation control signal generated by the timing control unit of the display driver chip to specifically trigger the OLED junction temperature detection. It uses the switching and detection resources of the pixel circuit in a time-division multiplexing manner with the first detection excitation to apply a constant narrow pulse width current pulse that has been pre-calibrated across the entire temperature range of -40°C to 85°C to the target diode connection structure. The narrow pulse width current pulse refers to a weak electrical excitation signal with a fixed current amplitude and a pulse width ≤1 microsecond, so that the PN junction of the target OLED is in a weak conduction state.

[0038] Subsequently, the on-chip integrated nanovolt-level high-precision voltage detection circuit rapidly acquires the forward conduction voltage value across the target OLED within an extremely short pulse duration window. This voltage value is the temperature detection signal, and its value exhibits a strict linear negative correlation with the OLED's junction temperature. The junction temperature refers to the operating temperature of the OLED's PN junction, which is a key parameter directly determining the OLED's luminous efficiency, color purity, and lifespan. The industry-standard calibration value is that for every 1°C increase in temperature, the OLED's forward conduction voltage decreases by approximately 2.5mV. Through the voltage-temperature conversion curve pre-embedded in the driver chip, the real-time junction temperature data for each pixel can be obtained.

[0039] Furthermore, in the method provided in the application embodiment, the first detection stimulus and the second detection stimulus are executed alternately in the progressive scan timing of the target video; wherein, the first detection stimulus is applied in the threshold voltage detection stage and the mobility detection stage of each frame of the target video, respectively, and the second detection stimulus is applied synchronously in the luminescence and aging detection stages of each frame of the target video.

[0040] Specifically, based on the progressive scan timing, which is the standard working timing of active matrix OLED panels, the panel sequentially selects pixel circuits, writes driving data, and lights up the screen row by row. The display of each frame is completed by progressive scanning from the first row to the last row. The complete frame cycle of each frame, that is, the total time required to display one frame, is divided into multiple non-overlapping and strictly synchronized functional time slots. This enables the conflict-free alternation of the first detection stimulus, namely the driving transistor electrical parameter detection stimulus, and the second detection stimulus, namely the OLED junction temperature detection stimulus, without the need to add extra frame cycle time throughout the process.

[0041] The first detection stimulus is applied in two phases: the threshold voltage detection phase and the mobility detection phase, both located during the blanking period of the frame cycle. This is the non-display preparation period after the horizontal scan is completed and before the next frame begins. A nanosecond-level protection interval is set between the two phases to prevent signal crosstalk. The reason for applying the first detection stimulus in two phases is because the threshold voltage of the driving transistor... and carrier mobility These are two independent electrical parameters. Current measurement under a single voltage cannot simultaneously solve for these two parameters. Therefore, it is necessary to apply predetermined DC voltages of different amplitudes in two stages. By combining the current formula of the saturated region MOS transistor through two independent current measurements, the real-time values ​​of the two parameters can be accurately calculated. The second detection excitation is allocated to be applied synchronously in the light emission and aging detection stages of each frame. This stage accounts for the majority of the frame cycle. It is the core display period when the OLED pixel receives the driving voltage and outputs the target brightness normally. It is also the period when the second electrical detection signal, i.e. the target anode voltage, is collected to assess the aging degree of the OLED. The second detection excitation is injected into the target OLED in the form of a microsecond-level narrow pulse superimposed on the normal light emission driving current. Since the pulse width is much lower than the human eye's visual persistence threshold, no perceptible parasitic light emission will be generated. At the same time, it realizes efficient resource reuse of one time slot and three functions, namely normal display, temperature detection, and aging detection. The entire timing scheduling process adopts time-division multiplexing technology, allowing the first detection excitation, the second detection excitation, and the normal display drive to share the same set of pixel circuit switching transistors, detection lines, and drive lines in a time-division manner.

[0042] Furthermore, in the method provided in the application embodiment, when the current junction temperature reflected by the temperature detection signal exceeds a preset first temperature threshold, the compensation coefficient corresponding to the standard temperature value with the smallest deviation from the current junction temperature in the predetermined multidimensional lookup table is preferentially called for data voltage modulation.

[0043] Specifically, the previously acquired temperature detection signal, i.e., the OLED forward conduction voltage value, is first converted into the current junction temperature of the target pixel using a voltage-temperature calibration curve pre-stored in the non-volatile memory of the driver chip. This junction temperature value is then compared in real-time with a preset first temperature threshold, typically set to 60°C (a critical temperature point determined according to the OLED device datasheet and long-term reliability testing). This temperature boundary represents the point where the OLED's luminous efficiency begins to show a significant non-linear decline but has not yet entered the permanent damage risk zone. When the current junction temperature exceeds the preset first temperature threshold, the system immediately interrupts the conventional temperature-transistor current-anode voltage three-dimensional bilinear interpolation matching. While this matching process is highly accurate, it involves a large computational load and is prone to response delays when the device's state changes rapidly at high temperatures. Instead, it... The execution priority call logic is as follows: First, all discrete standard temperature values ​​are extracted from the pre-defined multi-dimensional lookup table as the first index dimension. These are temperature nodes that are pre-calibrated at 5-10℃ intervals across the entire temperature range of -40℃ to 85℃. The compensation coefficients corresponding to each node have been calibrated point-by-point by batch panels, with an accuracy far exceeding that of interpolation calculations. Through hardware-accelerated absolute value difference calculations, the standard temperature value with the smallest deviation from the current junction temperature value is quickly selected. Subsequently, the system directly locks the entire lookup table index page corresponding to the standard temperature value and performs fast linear interpolation calculations only on the remaining two dimensions, transistor current and OLED anode voltage, to obtain the composite compensation coefficient. Finally, based on this coefficient, the data voltage modulation is completed, which is the entire process of compensating the target grayscale data and converting it into an analog driving voltage to be written into the pixel circuit.

[0044] Furthermore, in the method provided in the application embodiment, when the current junction temperature reflected by the temperature detection signal exceeds a preset second temperature threshold, the maximum grayscale current reference value of the circuit input to the target pixel is simultaneously reduced.

[0045] Specifically, firstly, the temperature monitoring module built into the driver chip collects the temperature detection signals of all pixels frame by frame and converts them into corresponding junction temperatures. Simultaneously, it calculates the global average junction temperature and the highest hotspot junction temperature of the panel in real time. The highest hotspot junction temperature is compared in real time with a preset second temperature threshold, which is the critical safety temperature determined based on the thermal stability and long-term reliability testing of OLED organic materials. This threshold is typically set to 80°C and represents the boundary value for the device entering the irreversible thermal damage risk zone. Exceeding this temperature will cause accelerated degradation of the organic light-emitting material and a sharp increase in the carrier injection barrier, leading to an exponential and irreversible decrease in panel brightness. When the highest hotspot junction temperature of the panel exceeds the preset second temperature threshold, the system, while maintaining the normal operation of the first-level priority matching compensation logic, simultaneously reduces the maximum grayscale current reference value of all pixel circuits, i.e., the highest reference current of the analog drive voltage output by the digital-to-analog converter (DAC) in the display driver chip. The maximum grayscale current reference value is the global benchmark that determines the magnitude of the driving current for all grayscale levels. The driving current corresponding to the highest grayscale level, such as level 1023 in a 10-bit panel, is directly equal to this benchmark value. The current for other lower grayscale levels is obtained by linearly scaling the grayscale value from this benchmark value. Its value directly determines the maximum display brightness and overall power consumption of the panel. The adjustment process adopts a linear gradual change strategy that is positively correlated with the junction temperature overshoot. That is, for every 1°C exceeding the second temperature threshold, the maximum grayscale current benchmark value is linearly reduced by 2% until it drops to the preset minimum safe benchmark value, which is usually 50% of the original benchmark value. At the same time, the synchronization feature ensures that the current benchmark of all pixels is adjusted at the same time, without destroying the brightness uniformity and color consistency of the image. After the adjustment is completed, the grayscale compensation calculation, digital-to-analog conversion and current driving process of all subsequent pixels will be automatically executed based on the updated maximum grayscale current benchmark value. The pixel-by-pixel accurate calculation logic of the composite compensation coefficient remains unchanged, and only the overall current output upper limit is limited.

[0046] Furthermore, in the method provided in the application embodiment, the predetermined multidimensional lookup table is a three-dimensional data table with multiple discrete standard junction temperature values ​​as the first index, multiple discrete grayscale current levels as the second index, and transistor current value, OLED temperature value, and OLED anode voltage as record fields.

[0047] Specifically, a dual-index system is first established. The first index is the standard junction temperature value, which is a pre-selected discrete temperature node covering the entire operating temperature range of automotive-grade OLEDs, from -40℃ to 85℃. These nodes are typically evenly distributed at 5℃ or 10℃ intervals. The device characteristics corresponding to each node have been batch-calibrated using at least 100 panels from different process batches. Temperature is chosen as the first priority index dimension because it has the most significant impact on OLED luminous efficiency and transistor electrical characteristics. Prioritizing temperature indexing can significantly improve the compensation response speed over a wide temperature range. The second index is the grayscale current level, which corresponds to discrete driving current nodes for different brightness outputs of the OLED. Based on the grayscale bit width of the display panel, including 8-bit, 10-bit, and 12-bit, it is divided in a logarithmic manner after gamma correction, covering the entire brightness range from the lowest darkest state to the highest brightest state, used to match different display... The differences in device characteristics under different brightness levels; the intersection of two index dimensions forms a two-dimensional index plane. Each index combination, i.e., a certain grayscale current level at a certain standard junction temperature, corresponds to a set of record fields, including the transistor current value, the standard drain current of a brand-new driving transistor under this condition, which is used to compare with the first electrical detection signal detected in real time to calculate the transistor degradation compensation component, the OLED temperature value, the standard forward conduction voltage of the OLED at this standard junction temperature, which is used to compare with the temperature detection signal detected in real time to calculate the temperature deviation compensation component, and the OLED anode voltage, the standard anode voltage of a brand-new OLED under this condition, which is used to compare with the second electrical detection signal detected in real time to calculate the OLED aging compensation component. At the same time, each record field group also pre-stores the weight coefficients of the three compensation components optimized by orthogonal experiments, which are used for the subsequent weighted summation calculation of composite compensation coefficients.

[0048] When the index digital value generated by real-time detection is input into the lookup table, the high-order segment of the index digital value is directly mapped to the first index, which is the address of the standard junction temperature value; the middle segment is mapped to the second index, which is the address of the grayscale current level; and the low-order segment is mapped to the offset address of the record field. Through the on-chip integrated high-speed parallel addressing circuit, all record fields can be read within one clock cycle. If there is a deviation between the real-time detection value and the discrete index point, bilinear interpolation calculation is automatically triggered to obtain the compensation reference value that is closest to the actual working condition.

[0049] Furthermore, in the method provided in the application embodiment, an index digital quantity is formed based on the first electrical detection signal, the temperature detection signal, and the second electrical detection signal, and a composite compensation coefficient corresponding to the index digital quantity is matched in a predetermined multidimensional lookup table. This includes: calculating a first compensation component corresponding to the aging degree of the target OLED based on the predetermined multidimensional lookup table; calculating a second compensation component corresponding to the electrical characteristic degradation degree of the target transistor based on the predetermined multidimensional lookup table; calculating a third compensation component corresponding to the deviation value of the target OLED from the standard operating temperature range based on the predetermined multidimensional lookup table; and weighted summing the first compensation component, the second compensation component, and the third compensation component to obtain the composite compensation coefficient.

[0050] Specifically, the first electrical detection signal (driving transistor drain current, current measurement from diode connection structure), the temperature detection signal (OLED junction temperature corresponding to forward voltage, constant narrow pulse width current pulse detection), and the second electrical detection signal (OLED anode voltage, synchronous acquisition from the light emission stage) are processed by on-chip low-pass filtering and 10-bit linear quantization to filter out signal fluctuations caused by circuit noise and timing interference. The continuous analog quantity is converted into a discrete digital quantity that is strictly matched with the standard transistor current, standard OLED temperature and voltage, standard anode voltage, and pre-optimized weighting coefficients of the new device, using the standard junction temperature value as the first index and the grayscale current level as the second index.

[0051] Subsequently, according to the preset priority bit allocation rules, the three quantized digital quantities are sequentially concatenated into a unique index digital quantity. The index digital quantity is used to accurately locate the binary code of the corresponding working condition record in the multidimensional lookup table. The temperature detection signal is allocated to the highest bit segment because temperature has the most significant impact on OLED luminous efficiency and transistor electrical characteristics. Prioritizing addressing by temperature can significantly improve the compensation response speed under extreme high and low temperatures. The transistor current signal is allocated to the middle bit segment, and the anode voltage signal is allocated to the lowest bit segment. At the same time, two redundant bits are reserved for subsequent lookup table accuracy upgrades. The index digital quantity is mapped to the physical address of the lookup table through an on-chip high-speed parallel addressing circuit. If the index value matches the discrete calibration node perfectly, the corresponding record is read directly. If there is a deviation, the three standard reference values ​​under the current working condition are calculated using bilinear interpolation.

[0052] Next, based on the standard reference value obtained from reading or interpolation, three independent compensation components are calculated: the first compensation component is the correction coefficient corresponding to the aging degree of the OLED itself. It is calculated by subtracting the real-time detected second electrical detection signal from the standard anode voltage of a brand-new OLED under the same operating conditions in the lookup table. Since the degradation of the organic material of the OLED will cause the carrier injection barrier to rise and the forward conduction voltage to rise monotonically, this difference can directly quantify the degree of brightness decay caused by aging. When the compensation component is greater than 1, it means that the driving current needs to be increased to offset the decay, and when it is less than 1, it means that the current needs to be reduced to prevent excessive brightness; the second compensation component is the second compensation component, which corresponds to the degradation of the electrical characteristics of the driving transistor. The first correction factor is calculated by subtracting the first electrical detection signal detected in real time from the standard drain current of a brand-new driving transistor under the same operating condition in the lookup table. This difference accurately reflects the threshold voltage drift and carrier mobility decay caused by thermal stress and charge injection, which in turn leads to the output current deviation. The third compensation component is the temperature deviation correction factor corresponding to the OLED deviating from the standard operating temperature range. It is calculated by combining the difference between the real-time junction temperature obtained by converting the temperature detection signal and the 25°C standard operating temperature with the pre-calibrated temperature-luminous efficiency nonlinear curve in the lookup table. It is used to compensate for the nonlinear characteristics of OLED luminous efficiency changing with temperature in a wide temperature range.

[0053] Finally, the three compensation components are substituted into the weighted summation formula obtained through extensive orthogonal experiments: Composite compensation coefficient = α × first compensation component + β × second compensation component + γ × third compensation component; α, β, and γ are pre-calibrated weight coefficients for different application scenarios, and α+β+γ=1. The final composite compensation coefficient is calculated, which integrates the combined influence of three independent factors on brightness and can accurately correct the brightness deviation of each pixel.

[0054] Furthermore, in the method provided in the application embodiment, converting the digital driving signal into a target analog data voltage and writing it into the circuit of the target pixel includes: enhancing the driving capability of the target analog data voltage through a unity-gain buffer; and writing the enhanced target analog data voltage into the storage capacitor of the circuit of the target pixel.

[0055] Specifically, firstly, the digital drive signal, after saturation truncation—that is, the binary digital quantity that is strictly matched with the input bit width of the back-end digital-to-analog converter (DAC)—has incorporated a composite correction for three factors: threshold voltage drift of the drive transistor, carrier mobility decay, OLED organic material aging, and wide-range temperature fluctuations. This precisely corresponds to the ideal drive current required to offset all brightness deviations of the target pixel. It is then fed into the high-speed DAC integrated within the display driver chip. Employing a segmented resistor string architecture, the DAC boasts conversion accuracy of 10 bits or more and microsecond-level conversion speed, enabling it to map each discrete digital drive signal without distortion to a unique corresponding continuous analog voltage value, i.e., the target analog data voltage. Due to the high resolution of 4K, 8K, and other high-resolution displays... Each pixel circuit in a high-resolution OLED panel contains inherent parasitic capacitance and dedicated storage capacitance, exhibiting a large capacitive load characteristic. The output current capability of the voltage signal directly output by the DAC is limited, which can lead to problems such as excessively long voltage settling time, crosstalk between rows, and excessive deviation between the final write voltage and the theoretical value, seriously affecting the compensation accuracy and display effect. Therefore, the target analog data voltage output by the DAC is immediately sent to a unity-gain buffer to enhance the driving capability. This is a voltage follower circuit based on an operational amplifier, with a voltage gain that is always equal to 1. It has extremely high input impedance and extremely low output impedance, and can increase the output current capability of the signal by tens of times without changing the voltage amplitude and waveform.

[0056] Subsequently, during the pixel writing stage of the target video's line-by-line scanning sequence, the switching and line resources of the pixel circuit are strictly time-division multiplexed with those of the threshold voltage detection, temperature detection, and aging detection stages. This process does not occupy the normal light-emitting display time, avoiding interference with the continuity of the image. The corresponding row's selection switch is turned on, and the buffered and enhanced target analog data voltage is rapidly written into the storage capacitor of the target pixel circuit at nanosecond speeds. As the core voltage holding element of the pixel circuit, the storage capacitor's capacitance value is precisely designed to maintain a stable voltage across its terminals throughout the entire frame cycle. This ensures that the target transistor receives a constant gate control voltage throughout the entire light-emitting stage, preventing brightness flickering or grayscale jumps. The entire writing process is executed synchronously line by line and pixel by pixel, forming a pipelined parallel processing with the front-end detection and calculation stages, ensuring smooth display of high frame rate video.

[0057] In summary, the OLED display method with wide temperature range adaptive brightness compensation provided in this application has the following technical effects: By time-division multiplexing the target video line-by-line scanning timing, a diode connection structure is constructed during the frame blanking period to complete the detection of the driving transistor's electrical parameters. During the light emission stage, microsecond-level narrow pulse current pulses are applied simultaneously to achieve OLED pixel-level junction temperature detection and anode voltage aging detection. The entire process does not require additional display time slots. At the same time, a three-dimensional multidimensional lookup table is constructed with discrete standard junction temperature value as the first index and discrete grayscale current level as the second index. Three independent compensation components of OLED aging, transistor degradation, and temperature deviation are weighted and fused to generate composite compensation coefficients. A standard temperature value priority matching mechanism is set for the first temperature threshold of 60℃ to improve the response speed of extreme high temperature compensation. A global maximum grayscale current reference value linearly decreases for the second temperature threshold of 80℃ to achieve overheat protection. Finally, pixel-level adaptive brightness accuracy compensation is achieved across the entire temperature range, improving the working stability and lifespan of OLED devices.

[0058] Example 2, based on the same inventive concept as the wide-temperature-range adaptive brightness compensation OLED display method in the foregoing examples, such as... Figure 2 As shown, this application provides an OLED display system with wide temperature range adaptive brightness compensation, the system comprising: The excitation module 11 is used to acquire a first detection excitation and detect the target transistor corresponding to the target pixel in the target OLED based on the first detection excitation to obtain a first electrical detection signal; the temperature module 12 is used to acquire a second detection excitation and detect the target OLED based on the second detection excitation to obtain a temperature detection signal; the electrical module 13 is used to acquire the target anode voltage of the target OLED during the light emission stage, and record it as the second electrical detection signal; the index module 14 is used to form an index digital quantity based on the first electrical detection signal, the temperature detection signal and the second electrical detection signal, and match the composite compensation coefficient corresponding to the index digital quantity in a predetermined multidimensional lookup table; the compensation module 15 is used to acquire the target grayscale data of the target video, and perform compensation calculation on the target grayscale data with the composite compensation coefficient to obtain a digital driving signal; the control module 16 is used to convert the digital driving signal into a target analog data voltage and write it into the circuit of the target pixel, and control the target transistor to perform adaptive brightness compensation.

[0059] Furthermore, the excitation module 11 is also used to perform the following steps: based on the first detection excitation, disconnect the connection between the target transistor and the target OLED in the circuit of the target pixel, and connect the gate and drain of the target transistor to form a diode connection structure; apply a predetermined voltage to the gate of the diode connection structure, measure the current value flowing through the target transistor, and record it as the first electrical detection signal.

[0060] Furthermore, the temperature module 12 is also used to perform the following steps: under the second detection excitation, a constant narrow pulse width current pulse is applied to turn on the target diode connection structure to obtain the temperature detection signal; wherein, the width of the constant narrow pulse width current pulse is less than or equal to the microsecond level.

[0061] Furthermore, the temperature module 12 is also used to perform the following steps: the first detection stimulus and the second detection stimulus are alternately executed in the progressive scan sequence of the target video; wherein, the first detection stimulus is applied in the threshold voltage detection stage and the mobility detection stage of each frame of the target video respectively, and the second detection stimulus is applied synchronously in the luminescence and aging detection stages of each frame of the target video.

[0062] Furthermore, the temperature module 12 is also used to perform the following steps: when the current junction temperature reflected by the temperature detection signal exceeds a preset first temperature threshold, the compensation coefficient corresponding to the standard temperature value with the smallest deviation from the current junction temperature in the predetermined multidimensional lookup table is preferentially called to perform data voltage modulation.

[0063] Furthermore, the temperature module 12 is also used to perform the following steps: when the current junction temperature reflected by the temperature detection signal exceeds a preset second temperature threshold, the maximum grayscale current reference value of the circuit input to the target pixel is simultaneously reduced.

[0064] Furthermore, the index module 14 is also used to perform the following steps. The predetermined multidimensional lookup table is a three-dimensional data table with multiple discrete standard junction temperature values ​​as the first index, multiple discrete grayscale current levels as the second index, and transistor current value, OLED temperature value, and OLED anode voltage as record fields.

[0065] Furthermore, the index module 14 is also used to perform the following steps: based on the predetermined multidimensional lookup table, calculate a first compensation component corresponding to the aging degree of the target OLED; based on the predetermined multidimensional lookup table, calculate a second compensation component corresponding to the electrical characteristic degradation degree of the target transistor; based on the predetermined multidimensional lookup table, calculate a third compensation component corresponding to the deviation value of the target OLED from the standard operating temperature range; and perform a weighted summation of the first compensation component, the second compensation component, and the third compensation component to obtain the composite compensation coefficient.

[0066] Furthermore, the control module 16 is also used to perform the following steps: enhance the driving capability of the target analog data voltage through a unity-gain buffer; and write the enhanced target analog data voltage into the storage capacitor of the circuit of the target pixel.

[0067] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A wide-temperature-range adaptive brightness compensation OLED display method, characterized in that, include: A first detection stimulus is obtained, and the target transistor corresponding to the target pixel in the target OLED is detected based on the first detection stimulus to obtain a first electrical detection signal; A second detection stimulus is obtained, and the target OLED is detected based on the second detection stimulus to obtain a temperature detection signal; The target anode voltage of the target OLED is acquired during the light emission stage and recorded as the second electrical detection signal; An index digital quantity is formed based on the first electrical detection signal, the temperature detection signal, and the second electrical detection signal, and the composite compensation coefficient corresponding to the index digital quantity is matched in a predetermined multidimensional lookup table; Acquire target grayscale data of the target video, and perform compensation calculation on the target grayscale data using the composite compensation coefficient to obtain a digital driving signal; The digital driving signal is converted into a target analog data voltage and written into the circuit of the target pixel to control the target transistor to perform adaptive brightness compensation.

2. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, Acquire a first detection stimulus, and based on the first detection stimulus, detect the target transistor corresponding to the target pixel in the target OLED to obtain a first electrical detection signal, including: Based on the first detection excitation, the connection between the target transistor and the target OLED in the circuit of the target pixel is disconnected, and the gate and drain of the target transistor are connected to form a diode connection structure; A predetermined voltage is applied to the gate of the diode connection structure, and the current flowing through the target transistor is measured and recorded as the first electrical detection signal.

3. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 2, characterized in that, Under the second detection excitation, a constant narrow pulse width current pulse is applied to turn on the target diode connection structure, thereby obtaining the temperature detection signal; The width of the constant narrow pulse current pulse is less than or equal to the microsecond level.

4. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, The first detection stimulus and the second detection stimulus are executed alternately in the line-by-line scanning sequence of the target video; The first detection stimulus is applied in the threshold voltage detection stage and the mobility detection stage of each frame of the target video, respectively, and the second detection stimulus is applied synchronously in the luminescence and aging detection stages of each frame of the target video.

5. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, When the current junction temperature reflected by the temperature detection signal exceeds the preset first temperature threshold, the compensation coefficient corresponding to the standard temperature value with the smallest deviation from the current junction temperature in the predetermined multidimensional lookup table is preferentially called for data voltage modulation.

6. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, When the current junction temperature reflected by the temperature detection signal exceeds a preset second temperature threshold, the maximum grayscale current reference value of the circuit input to the target pixel is simultaneously reduced.

7. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, The predetermined multidimensional lookup table is a three-dimensional data table with multiple discrete standard junction temperature values ​​as the first index, multiple discrete grayscale current levels as the second index, and transistor current value, OLED temperature value, and OLED anode voltage as record fields.

8. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 7, characterized in that, An indexed digital quantity is formed based on the first electrical detection signal, the temperature detection signal, and the second electrical detection signal, and a composite compensation coefficient corresponding to the indexed digital quantity is matched in a predetermined multidimensional lookup table, including: Based on the predetermined multidimensional lookup table, calculate the first compensation component corresponding to the aging degree of the target OLED; Based on the predetermined multidimensional lookup table, calculate the second compensation component corresponding to the degree of electrical characteristic degradation of the target transistor; Based on the predetermined multidimensional lookup table, calculate the third compensation component corresponding to the deviation value of the target OLED from the standard operating temperature range; The first compensation component, the second compensation component, and the third compensation component are weighted and summed to obtain the composite compensation coefficient.

9. The OLED display method with wide temperature range adaptive brightness compensation as described in claim 1, characterized in that, The circuit that converts the digital driving signal into a target analog data voltage and writes it into the target pixel includes: The driving capability of the target analog data voltage is enhanced by using a unity-gain buffer; The target analog data voltage, after being enhanced with driving capability, is written into the storage capacitor of the circuit of the target pixel.

10. A wide-temperature-range adaptive brightness compensation OLED display system, characterized in that, The system is used to implement the OLED display method with wide temperature range adaptive brightness compensation according to any one of claims 1 to 9, wherein the system comprises: The excitation module is used to acquire a first detection excitation and detect the target transistor corresponding to the target pixel in the target OLED based on the first detection excitation to obtain a first electrical detection signal; A temperature module is used to acquire a second detection stimulus and detect the target OLED based on the second detection stimulus to obtain a temperature detection signal; The electrical module is used to acquire the target anode voltage of the target OLED during the light emission stage, denoted as the second electrical detection signal; The index module is used to form an index digital quantity based on the first electrical detection signal, the temperature detection signal and the second electrical detection signal, and to match the composite compensation coefficient corresponding to the index digital quantity in a predetermined multidimensional lookup table; The compensation module is used to acquire the target grayscale data of the target video and perform compensation calculation on the target grayscale data with the composite compensation coefficient to obtain a digital driving signal. The control module is used to convert the digital driving signal into a target analog data voltage and write it into the circuit of the target pixel, and control the target transistor to perform adaptive brightness compensation.

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