A dry etching apparatus

Abstract

A dry etching apparatus, comprising: a first electrode, a second electrode and a shielding base, the first electrode and the second electrode are oppositely arranged, a side of the second electrode close to the first electrode is used to carry a substrate to be dry etched, the shielding base surrounds the periphery of the carrying surface of the second electrode; the side surface of the shielding base close to the first electrode is flush with the carrying surface of the second electrode or is farther away from the first electrode than the carrying surface of the second electrode; a blowing structure is arranged in the sidewall of the second electrode close to the shielding base, the blowing structure is located at least in the sidewall area of the second electrode close to the carrying surface thereof, and the blowing structure can blow gas into the joint between the second electrode and the shielding base.

Description

Technical Field

[0001] This disclosure pertains to the field of display technology, specifically relating to a dry etching device. Background Technology

[0002] Inductively coupled plasma dry etching equipment typically uses electrode discharge to dissociate process gases into plasma, which etches away the metal or non-metal films on the substrate that are not covered by photoresist masks, leaving the areas covered by photoresist masks intact, thus forming the desired pattern on the substrate. Summary of the Invention

[0003] This disclosure provides a dry etching apparatus, including: a first electrode, a second electrode, and a shielding base.

[0004] The first electrode and the second electrode are disposed opposite to each other. The side of the second electrode closer to the first electrode is used to support the substrate to be etched. The shielding base surrounds the periphery of the supporting surface of the second electrode.

[0005] The side surface of the shielding base closest to the first electrode is flush with the bearing surface of the second electrode or further away from the first electrode relative to the bearing surface of the second electrode;

[0006] An air blowing structure is provided in the side wall of the second electrode near the shielding base. The air blowing structure is located at least in the side wall region of the second electrode near its bearing surface. The air blowing structure can blow air into the joint between the second electrode and the shielding base.

[0007] In some embodiments, the air blowing structure includes a first air guide groove, an air hole, and a second air guide groove, all of which are formed in the side wall of the second electrode, and the second air guide groove, the first air guide groove, and the air hole are connected in sequence.

[0008] The pore extends from the sidewall of the second electrode to the sidewall surface of the second electrode, and the first end opening of the pore is located on the sidewall surface of the second electrode.

[0009] The second air guide groove extends from the side wall of the second electrode to the side surface of the second electrode away from the first electrode, and the first end opening of the second air guide groove is located on the side surface of the second electrode away from the first electrode.

[0010] The air blowing structure also includes an air supply pipe and a flow meter, located outside the second electrode and the shielding base. The air supply pipe and the flow meter are connected, and the air supply pipe is connected to the first end opening of the second air guide groove for introducing inert gas into the second air guide groove.

[0011] In some embodiments, the first air guide groove, the air hole, and the second air guide groove are each provided with a plurality of them;

[0012] Each sidewall of the second electrode is provided with a second gas guide groove;

[0013] Each sidewall of the second electrode is provided with a plurality of the first air guide grooves and a plurality of the air holes;

[0014] Each of the first air guide grooves is connected to a plurality of the air holes;

[0015] One of the second gas guide grooves corresponds to all the first gas guide grooves on one sidewall of the second electrode.

[0016] In some embodiments, the extension directions of the plurality of first air guide grooves in any sidewall of the second electrode are parallel to each other, and the extension directions of the second air guide grooves and the extension directions of the first air guide grooves intersect each other.

[0017] The extension directions of the plurality of pores in any sidewall of the second electrode are parallel to each other, and the extension direction of the first air guide groove and the extension direction of the pores intersect each other.

[0018] The extension directions of the first air guide groove and the air hole are parallel to the bearing surface of the second electrode;

[0019] The extension direction of the second air guide groove intersects with the bearing surface of the second electrode.

[0020] In some embodiments, a plurality of the first air guide grooves in any sidewall of the second electrode are arranged at equal intervals in sequence along a direction away from the bearing surface of the second electrode.

[0021] The distance between the first air guide groove closest to the bearing surface of the second electrode and the bearing surface of the second electrode is equal to the distance between two adjacent first air guide grooves;

[0022] The plurality of air holes connected to the same first air guide groove are arranged at equal intervals along the extension direction of the first air guide groove.

[0023] In some embodiments, the first air guide grooves arranged in the same order in adjacent sidewalls of the second electrode are interconnected.

[0024] The number of the first air guide grooves in any sidewall of the second electrode is ≤5;

[0025] The distance between two adjacent first air guide grooves on the same sidewall of the second electrode is ≤5mm;

[0026] The diameter of the air hole is ≤2mm; the distance between two adjacent air holes connected to the same first air guide groove is ≤10mm.

[0027] In some embodiments, the gas supply conduit extends to communicate with the first end opening of the second gas guide groove in each sidewall of the second electrode.

[0028] In some embodiments, a groove is formed on the side wall of the shielding base near the second electrode.

[0029] The grooves are distributed at least at one end of the sidewall of the shielding base near the bearing surface of the second electrode, and the grooves extend to the side surface of the shielding base near the first electrode.

[0030] In some embodiments, the shielding base is closed around the periphery of the sidewalls of the second electrode.

[0031] The trench is closed around the four sides of the second electrode.

[0032] In some embodiments, the width of the trench along the direction away from the sidewall of the second electrode is ≤2mm;

[0033] The depth of the trench along the direction away from the bearing surface of the second electrode is ≤20mm. Attached Figure Description

[0034] The accompanying drawings are provided to further illustrate the embodiments of this disclosure and form part of the specification. They are used together with the embodiments of this disclosure to explain the disclosure and do not constitute a limitation thereof. The above and other features and advantages will become more apparent to those skilled in the art from the detailed description of exemplary embodiments with reference to the accompanying drawings, in which:

[0035] Figure 1A This is a schematic diagram of the structure and etching principle of an inductively coupled plasma dry etching (ICP) device in related technologies.

[0036] Figure 1B This is a schematic diagram showing the deposition location of etching byproducts in dry etching equipment in related technologies.

[0037] Figure 1C This is a schematic diagram illustrating a bright spot defect appearing at the edge of a display panel after it is lit up in a related technology.

[0038] Figure 1D This is an electron microscope image of a substrate edge defect in a related technology.

[0039] Figure 2 This is a top view schematic diagram of the dry etching equipment in an embodiment of this disclosure.

[0040] Figure 3This is a schematic diagram of the cross-sectional structure of the dry etching device in an embodiment of this disclosure.

[0041] Figure 4 This is a schematic diagram of one sidewall of the second electrode in the dry etching apparatus of this embodiment.

[0042] Figure 5 This is a schematic cross-sectional view of the shielding base in the dry etching apparatus of this disclosure. Detailed Implementation

[0043] To enable those skilled in the art to better understand the technical solutions of the embodiments of this disclosure, the following describes in further detail a dry etching apparatus provided by the embodiments of this disclosure in conjunction with the accompanying drawings and specific implementation methods.

[0044] Embodiments of this disclosure will be described more fully below with reference to the accompanying drawings; however, the embodiments shown may be embodied in different forms and should not be construed as limited to the embodiments set forth in this disclosure. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will enable those skilled in the art to fully understand the scope of this disclosure.

[0045] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms “a,” “an,” “an,” “the,” and similar words used in this application do not indicate quantity limitation and may indicate singular or plural. The terms “comprising,” “including,” “having,” and any variations thereof used in this application are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units not listed, or may include other steps or units inherent to these processes, methods, products, or devices. The terms “connected,” “linked,” “coupled,” and similar words used in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Multiple” used in this application refers to two or more. “And / or” describes the relationship between related objects, indicating that three relationships may exist; for example, “A and / or B” can represent: A alone, A and B simultaneously, and B alone. The character " / " generally indicates that the preceding and following objects are in an "or" relationship. The terms "first," "second," and "third" used in this application are merely to distinguish similar objects and do not represent a specific ordering of objects. "Above," "below," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0046] As used herein, “parallel” and “perpendicular” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°.

[0047] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on another layer or substrate, or that there is an intermediate layer between the layer or element and another layer or substrate.

[0048] This document describes exemplary embodiments with reference to sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Therefore, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. Thus, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0049] The structure and etching principle of inductively coupled plasma dry etching equipment are as follows: Figure 1A As shown, the dry etching equipment includes a first electrode 1 and a second electrode 2 arranged opposite to each other, and a shielding base 3 surrounding the second electrode 2. The substrate 4 to be dry-etched is placed on the second electrode 2. During the etching process, the first electrode 1 discharges and dissociates the process gas in the process chamber into plasma 10. The high-density plasma 10 bombards the substrate 4 with ions with energy up to several hundred electron volts, causing the local instantaneous temperature to exceed 200°C. The thermal stability threshold of the photoresist mask is usually below 150°C. Currently, the heat dissipation scheme of etching technology relies on blowing helium gas (He, thermal conductivity 0.15 W / m·K) onto the back of the substrate 4 to achieve forced convection cooling. The cooling effect is highly dependent on the contact thermal resistance between the substrate 4 and the second electrode 2 that carries the substrate 4 in the dry etching equipment.

[0050] In current dry engraving equipment, refer to Figure 1BThe mechanical fit gap between the edge of the bearing surface P of the second electrode 2 and the shielding base 3 is approximately 0.5-1 mm, which becomes a preferential deposition area for etching byproducts. During the etching process, the accumulation thickness of the byproduct 11 at the edge of the bearing surface P of the second electrode 2 can reach 5-10 μm per hour. The accumulated byproduct 11 lifts the edge of the substrate 4, causing the local edge of the substrate 4 to bend or lift more than 50 μm towards the side closer to the first electrode 1. This deformation of the substrate 4 not only reduces its effective cooling area for helium gas on the back by more than 40%, but also forms turbulent vortices (Reynolds number Re>5000) at the edge of the substrate 4, resulting in uneven helium gas flow distribution (e.g., the helium flow ratio at the substrate edge to the center reaches 3:1), causing drastic changes in the temperature gradient at the edge of the substrate 4 (e.g., the temperature gradient at the substrate edge increases along the direction closer to the edge), triggering a nonlinear drift in the etching rate at the edge of the substrate 4 (e.g., the etching rate at the substrate edge decreases by 25%), and accelerating the thermal decomposition of the photoresist at the edge of the substrate 4 (gas generation rate increases by 3 times), which further exacerbates the adhesion of etching particles at the edge of the second electrode 2. Especially in the etching process of non-metallic layer holes, due to the large etching depth (up to the micrometer level) and small hole radius, the deposition of deposits at the edge of the second electrode 2 is aggravated. After 100 hours of processing, the accumulated height of etching by-products at the edge of the second electrode 2 exceeds 1 mm, causing tip discharge phenomenon. This leads to an increase in defect density in the 50 mm area at the edge of the mass-produced substrate 4, and the electrostatic discharge failure rate at the edge of substrate 4 exceeds 30% of the total defect rate. As a result, after the display panel using this substrate 4 is lit, severe bright spots Q appear at the edge, such as... Figure 1C and Figure 1D .

[0051] To address the aforementioned issues, current improvements (such as optimizing the material of the second electrode 2 or implementing closed-loop control of helium pressure) can only alleviate short-term fluctuations and cannot fundamentally block the physical path of product accumulation.

[0052] To address the aforementioned problems in the related art, in a first aspect, embodiments of this disclosure provide a dry etching apparatus, such as... Figures 2-5 As shown, it includes: a first electrode 1, a second electrode 2, and a shielding base 3. The first electrode 1 and the second electrode 2 are disposed opposite to each other. The side of the second electrode 2 near the first electrode 1 is used to support the substrate 4 to be etched. The shielding base 3 surrounds the periphery of the bearing surface P of the second electrode 2. The surface of the shielding base 3 near the first electrode 1 is flush with the bearing surface P of the second electrode 2 or is further away from the first electrode 1 relative to the bearing surface P of the second electrode 2. An air blowing structure is provided in the side wall of the second electrode 2 near the shielding base 3. The air blowing structure is located at least in the side wall region of the second electrode 2 near its bearing surface P. The air blowing structure can blow air into the joint S between the second electrode 2 and the shielding base 3.

[0053] In this configuration, the first electrode 1 and the second electrode 2 are arranged vertically in sequence and positioned opposite each other. The shielding base 3 surrounds the periphery of the sidewalls of the second electrode 2. Furthermore, regardless of whether the surface of the shielding base 3 closest to the first electrode 1 is flush with the bearing surface P of the second electrode 2, or whether the surface of the shielding base 3 closest to the first electrode 1 is further away from the bearing surface P of the second electrode 2, a seam S is formed between the sidewall of the second electrode 2 and the sidewall of the shielding base 3. An air-blowing structure blows air into this seam S, thereby reducing or preventing the accumulation of etching products at the edge of the bearing surface P of the second electrode 2.

[0054] In this embodiment, substrate 4 can be an OLED (Organic Light-Emitting Diode) substrate or an LCD (Liquid Crystal Display) substrate; no limitation is made here. The dry etching equipment is an inductively coupled plasma dry etching equipment. During the etching process, the first electrode 1 discharges, dissociating the process gas in the process chamber into plasma. The high-density plasma bombards substrate 4 with ions to achieve etching of substrate 4.

[0055] By providing an air-blowing structure in the sidewall of the second electrode 2 near the shielding base 3, and ensuring that the air-blowing structure is located at least in the sidewall region of the second electrode 2 near its bearing surface P, the air-blowing structure blows air into the joint between the second electrode 2 and the shielding base 3. This effectively guides the directional deposition of etching products at the edge of the bearing surface P of the second electrode 2, reducing the accumulation of etching by-products at the edge of the bearing surface P of the second electrode 2. This improves the electrostatic discharge problem at the edge of the substrate 4 caused by the accumulation of etching by-products at the edge of the bearing surface P of the second electrode 2, and also improves the temperature difference at the edge of the substrate 4, thereby improving the edge bright spot problem of the display panel using this substrate 4 and increasing the yield of the display panel. In addition, this dry etching equipment also provides an effective path for the stability and yield of the etching process, ensuring the uniformity of the etching rate, while extending the single maintenance cycle of the second electrode 2, improving the uptime of the inductively coupled plasma dry etching equipment and the pass rate of substrate 4 etching.

[0056] In some embodiments, such as Figures 2-3As shown, the air blowing structure includes a first air guide groove 5, an air hole 6, and a second air guide groove 7, all of which are opened in the side wall of the second electrode 2, and the second air guide groove 7, the first air guide groove 5, and the air hole 6 are connected in sequence; the air hole 6 extends from the side wall of the second electrode 2 to the side wall surface of the second electrode 2, and the first end opening K of the air hole 6 is located on the side wall surface of the second electrode 2; the second air guide groove 7 extends from the side wall of the second electrode 2 to the side surface of the second electrode 2 away from the first electrode 1, and the first end opening G of the second air guide groove 7 is located on the side surface of the second electrode 2 away from the first electrode 1; the air blowing structure also includes an air supply pipe 8 and a flow meter 9, located outside the second electrode 2 and the shielding base 3, the air supply pipe 8 and the flow meter 9 are connected, and the air supply pipe 8 is connected to the first end opening G of the second air guide groove 7 for introducing inert gas into the second air guide groove 7.

[0057] Inert gases such as helium and argon are used. Flow meter 9 is used to control the gas supply flow rate of gas supply pipe 8. During the substrate etching process, inert gas is blown out through the vents 6 in the sidewalls around the second electrode 2, which can reduce or remove the accumulation of etching products at the edge of the bearing surface P of the second electrode 2. By setting up the blowing structure, the inert gas flow field can be actively controlled, thereby improving or avoiding the tip discharge problem caused by the accumulation of etching by-products at the edge of the bearing surface P of the second electrode 2, while also meeting the requirements of semiconductor manufacturing for sub-nanometer etching precision and ppm-level defect control.

[0058] In some embodiments, such as Figures 2-5 As shown, multiple first air guide grooves 5, air holes 6, and second air guide grooves 7 are respectively provided; a second air guide groove 7 is provided in each side wall of the second electrode 2; multiple first air guide grooves 5 and multiple air holes 6 are provided in each side wall of the second electrode 2; each first air guide groove 5 is connected to multiple air holes 6; a second air guide groove 7 is connected to all the first air guide grooves 5 in one side wall of the second electrode 2.

[0059] In some embodiments, such as Figures 2-5 As shown, the extension directions of the plurality of first air guide grooves 5 in any sidewall of the second electrode 2 are parallel to each other, and the extension directions of the second air guide groove 7 and the first air guide groove 5 intersect each other; the extension directions of the plurality of air holes 6 in any sidewall of the second electrode 2 are parallel to each other, and the extension directions of the first air guide groove 5 and the air holes 6 intersect each other; the extension directions of the first air guide groove 5 and the air holes 6 are parallel to the bearing surface P of the second electrode 2; the extension direction of the second air guide groove 7 intersects the bearing surface P of the second electrode 2.

[0060] In some embodiments, such as Figures 2-4As shown, multiple first air guide grooves 5 in any sidewall of the second electrode 2 are arranged at equal intervals along the direction away from the bearing surface P of the second electrode 2; the distance between the first air guide groove 5 closest to the bearing surface P of the second electrode 2 and the bearing surface P of the second electrode 2 is equal to the distance between two adjacent first air guide grooves 5; multiple air holes 6 connected to the same first air guide groove 5 are arranged at equal intervals along the extension direction of the first air guide groove 5. This arrangement allows the air blowing structure in any sidewall of the second electrode 2 to uniformly blow air into the joint S between the second electrode 2 and the shielding base 3, thereby improving or avoiding the tip discharge problem caused by the accumulation of etching byproducts at the edge of the bearing surface P of the second electrode 2.

[0061] In some embodiments, such as Figure 4 As shown, the first air guide grooves 5 arranged in the same order in the adjacent sidewalls of the second electrode 2 are interconnected; the number of first air guide grooves 5 in any sidewall of the second electrode 2 is ≤5; the distance m between two adjacent first air guide grooves 5 in the same sidewall of the second electrode 2 is ≤5mm; the diameter of the air hole 6 is ≤2mm; the distance n between two adjacent air holes 6 connected to the same first air guide groove 5 is ≤10mm.

[0062] In some embodiments, such as Figure 2 As shown, the gas supply pipe 8 extends to connect with the first end opening G of the second gas guide groove 7 in each side wall of the second electrode 2.

[0063] Among them, such as Figure 2 As shown, the gas supply pipeline 8 may also include a main gas supply pipeline 81 and multiple branch gas supply pipelines 82. Each branch gas supply pipeline 82 is connected to the first end opening G of the second gas guide groove 7 in one side wall of the second electrode 2. Finally, the multiple branch gas supply pipelines 82 are connected to a main gas supply pipeline 81. The main gas supply pipeline 81 is connected to a flow meter 9. The flow meter 9 controls the gas flow rate in the main gas supply pipeline 81, thereby controlling the gas flow rate in each branch gas supply pipeline 82.

[0064] In some embodiments, the outer diameter of each branch gas supply pipe 82 is ≤¼”, and the outer diameter of the main gas supply pipe 81 is ≤½”.

[0065] In some embodiments, such as Figure 5 As shown, a groove C is provided on the side wall of the shielding base 3 near the second electrode 2. The groove C is distributed at least at one end of the bearing surface P of the side wall of the shielding base 3 near the second electrode 2, and the groove C extends to the side surface of the shielding base 3 near the first electrode 1.

[0066] In some embodiments, such as Figure 5 As shown, the shielding base 3 is closed around the periphery of the second electrode 2, and the groove C is closed around the periphery of the second electrode 2.

[0067] The trench C can store the etching products, thereby preventing the etching products from accumulating directly on the edge of the bearing surface P of the second electrode 2. This improves the temperature difference, etching rate uniformity, and electrostatic breakdown during the etching of the substrate 4 edge. It also extends the single maintenance cycle of the second electrode 2, improves the uptime of the inductively coupled plasma dry etching equipment, and increases the yield of the substrate 4 etching.

[0068] In some embodiments, such as Figure 5 As shown, the width w of the trench C along the direction away from the sidewall of the second electrode 2 is ≤2mm; the depth h of the trench C along the direction away from the bearing surface P of the second electrode 2 is ≤20mm. This size setting of the trench C ensures, on the one hand, that the inert gas blown out of the vent 6 can smoothly blow out most of the etching products from the joint S between the second electrode 2 and the shielding base 3, thereby improving or avoiding the accumulation of etching products at the edge of the bearing surface P of the second electrode 2; on the other hand, the etching products that are not blown out by the inert gas will be deposited in the trench C, thereby further improving or avoiding the accumulation of etching products at the edge of the bearing surface P of the second electrode 2.

[0069] In some embodiments, for example: air holes 6 are formed in all four sides of the second electrode 2. The diameter of the air holes 6 is 0.5 mm. The distance between two adjacent air holes 6 connected to the same first air guide groove 5 is 10 mm, and the distance between two adjacent first air guide grooves 5 is 5 mm. The first air guide grooves 5 are arranged in two closed loops around the four sides of the second electrode 2. The distance between the first air guide groove 5 closest to the bearing surface P of the second electrode 2 and the bearing surface P of the second electrode 2 is 5 mm, and the distance between the two loops of first air guide grooves 5 is 5 mm. The groove C formed on the sidewall of the shielding base 3 has a width of 1 mm in the direction away from the sidewall of the second electrode 2, and a depth of 10 mm in the direction away from the bearing surface P of the second electrode 2. During the etching process of substrate 4, the vents 6 on the sides of the second electrode 2 blow out helium gas at a flow rate of 1000 sccm, which can remove the etching products attached to the edge of the bearing surface P of the second electrode 2 and prevent the accumulation of etching products on the edge of the bearing surface P of the second electrode 2. The grooves C on the side wall of the shielding base 3 can store the etching products, thereby further preventing the accumulation of etching products on the bearing surface P of the second electrode 2.

[0070] The dry etching apparatus provided in this embodiment utilizes an air-blowing structure located in the sidewall of the second electrode 2 near the shielding base 3, with the air-blowing structure situated at least in the sidewall region of the second electrode 2 near its bearing surface P. This air-blowing structure blows air into the joint between the second electrode 2 and the shielding base 3, effectively guiding the directional deposition of etching products at the edge of the bearing surface P of the second electrode 2. This reduces the accumulation of etching byproducts at the edge of the bearing surface P of the second electrode 2, thereby improving the electrostatic discharge problems at the edge of the substrate 4 caused by the accumulation of etching byproducts at the edge of the bearing surface P of the second electrode 2. Simultaneously, it improves the temperature difference at the edge of the substrate 4, thereby improving the edge bright spot problem of the display panel using this substrate 4 and increasing the yield of the display panel. Furthermore, this dry etching apparatus provides an effective path for the stability and yield of the etching process, ensuring the uniformity of the etching rate, while extending the single maintenance cycle of the second electrode 2, improving the uptime of the inductively coupled plasma dry etching apparatus and the pass rate of substrate 4 etching.

[0071] The display device provided in this disclosure can be any product or component with display function, such as an OLED panel, OLED TV, OLED billboard, monitor, mobile phone, or navigator.

[0072] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A dry engraving device, comprising: First electrode, second electrode, and shielding base; The first electrode and the second electrode are disposed opposite to each other. The side of the second electrode closer to the first electrode is used to support the substrate to be etched. The shielding base surrounds the periphery of the supporting surface of the second electrode. The side surface of the shielding base closest to the first electrode is flush with the bearing surface of the second electrode or further away from the first electrode relative to the bearing surface of the second electrode; The feature is that an air blowing structure is provided in the side wall of the second electrode near the shielding base, the air blowing structure is located at least in the side wall region of the second electrode near its bearing surface, and the air blowing structure can blow air into the joint between the second electrode and the shielding base.

2. The dry engraving equipment according to claim 1, characterized in that, The air blowing structure includes a first air guide groove, an air hole, and a second air guide groove, all of which are opened in the side wall of the second electrode, and the second air guide groove, the first air guide groove, and the air hole are connected in sequence. The pore extends from the sidewall of the second electrode to the sidewall surface of the second electrode, and the first end opening of the pore is located on the sidewall surface of the second electrode. The second air guide groove extends from the side wall of the second electrode to the side surface of the second electrode away from the first electrode, and the first end opening of the second air guide groove is located on the side surface of the second electrode away from the first electrode. The air blowing structure also includes an air supply pipe and a flow meter, located outside the second electrode and the shielding base. The air supply pipe and the flow meter are connected, and the air supply pipe is connected to the first end opening of the second air guide groove for introducing inert gas into the second air guide groove.

3. The dry engraving equipment according to claim 2, characterized in that, The first air guide groove, the air hole, and the second air guide groove are each provided in multiple ways; Each sidewall of the second electrode is provided with a second gas guide groove; Each sidewall of the second electrode is provided with a plurality of the first air guide grooves and a plurality of the air holes; Each of the first air guide grooves is connected to a plurality of the air holes; One of the second gas guide grooves corresponds to all the first gas guide grooves on one sidewall of the second electrode.

4. The dry engraving equipment according to claim 3, characterized in that, The extension directions of the plurality of first gas guide grooves in any sidewall of the second electrode are parallel to each other, and the extension directions of the second gas guide grooves and the extension directions of the first gas guide grooves intersect each other. The extension directions of the plurality of pores in any sidewall of the second electrode are parallel to each other, and the extension direction of the first air guide groove and the extension direction of the pores intersect each other. The extension directions of the first air guide groove and the air hole are parallel to the bearing surface of the second electrode; The extension direction of the second air guide groove intersects with the bearing surface of the second electrode.

5. The dry engraving equipment according to claim 4, characterized in that, The plurality of first air guide grooves in any side wall of the second electrode are arranged at equal intervals along the direction away from the bearing surface of the second electrode; The distance between the first air guide groove closest to the bearing surface of the second electrode and the bearing surface of the second electrode is equal to the distance between two adjacent first air guide grooves; The plurality of air holes connected to the same first air guide groove are arranged at equal intervals along the extension direction of the first air guide groove.

6. The dry engraving equipment according to claim 5, characterized in that, The first air guide grooves arranged in the same order in adjacent sidewalls of the second electrode are interconnected; The number of the first air guide grooves in any sidewall of the second electrode is ≤5; The distance between two adjacent first air guide grooves on the same sidewall of the second electrode is ≤5mm; The diameter of the pores is ≤2mm; The distance between two adjacent air holes connected to the same first air guide groove is ≤10mm.

7. The dry engraving equipment according to any one of claims 3-6, characterized in that, The gas supply pipe extends to connect with the first end opening of the second gas guide groove in each sidewall of the second electrode.

8. The dry engraving apparatus according to any one of claims 1-6, characterized in that, The shielding base has a groove on the side wall near the second electrode. The grooves are distributed at least at one end of the sidewall of the shielding base near the bearing surface of the second electrode, and the grooves extend to the side surface of the shielding base near the first electrode.

9. The dry engraving equipment according to claim 8, characterized in that, The shielding base is closed around the perimeter of the sidewalls of the second electrode. The trench is closed around the four sides of the second electrode.

10. The dry engraving equipment according to claim 8, characterized in that, The width of the trench along the direction away from the sidewall of the second electrode is ≤2mm; The depth of the trench along the direction away from the bearing surface of the second electrode is ≤20mm.

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