Radio frequency output device and semiconductor process equipment

Abstract

This invention discloses a radio frequency (RF) output device and semiconductor process equipment. The RF output device includes: an RF power supply module and a power distribution module; the RF power supply module outputs a first RF signal and a second RF signal; the power distribution module includes multiple power distribution units; a power distribution input terminal receives the first RF signal and the second RF signal; the multiple power distribution units include at least one impedance-adjustable unit and at least one impedance-fixed unit; the impedance-adjustable unit controls the power distribution ratio of the first RF signal among the power distribution units in the power distribution module, and the power distribution ratio of the second RF signal among the power distribution units in the power distribution module. This invention provides an RF output device and semiconductor process equipment that can ensure that the power distribution ratio of multiple RF signals of different frequencies is adjustable and does not interfere with each other in the same power distribution module, thereby improving the fabrication accuracy of semiconductor devices.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a radio frequency output device and semiconductor process equipment. Background Technology

[0002] In semiconductor manufacturing processes, deposition and etching are critical steps that determine device performance and precision. As device dimensions continue to shrink and high aspect ratio structures become increasingly common, the process demands increasingly precise control over plasma characteristics.

[0003] To meet these requirements, current semiconductor process equipment typically employs dual-frequency or even multi-frequency radio frequency power modules. These modules utilize high-frequency and low-frequency signals to control plasma density and ion energy.

[0004] However, in practical applications, applying two different frequency radio frequency signals to the process chamber simultaneously and independently controlling the output power of each frequency has always been a challenge for the industry. Summary of the Invention

[0005] This invention provides a radio frequency output device and semiconductor process equipment, which can ensure that the power distribution ratio of multiple radio frequency signals of different frequencies in the same power distribution module is adjustable and does not affect each other, thereby improving the manufacturing accuracy of semiconductor devices.

[0006] According to one aspect of the present invention, a radio frequency output device is provided, the radio frequency output device comprising:

[0007] An RF power supply module is used to output a first RF signal and a second RF signal, wherein the frequency of the first RF signal is greater than the frequency of the second RF signal;

[0008] A power distribution module includes a power distribution input terminal, multiple power distribution output terminals, and multiple power distribution units; the power distribution units are located between the power distribution input terminal and the power distribution output terminals; the power distribution input terminal is used to receive the first radio frequency signal and the second radio frequency signal; the multiple power distribution units include at least one impedance adjustable unit and at least one impedance fixed unit.

[0009] The impedance adjustable unit is used to control the power allocation ratio of the first radio frequency signal among the power allocation units in the power allocation module without affecting the power allocation ratio of the second radio frequency signal among the power allocation units, and the power allocation ratio of the second radio frequency signal among the power allocation units in the power allocation module without affecting the power allocation ratio of the first radio frequency signal among the power allocation units.

[0010] Optionally, the impedance-adjustable unit includes an adjustable capacitor unit and an adjustable inductor unit connected in parallel;

[0011] The adjustable capacitor unit is used to control the power allocation ratio of the first radio frequency signal in each of the power allocation units, and does not affect the power allocation ratio of the second radio frequency signal in each of the power allocation units;

[0012] The adjustable inductor unit is used to control the power allocation ratio of the second radio frequency signal in each of the power allocation units, without affecting the power allocation ratio of the first radio frequency signal in each of the power allocation units.

[0013] Optionally, the power distribution module includes at least two impedance fixing units;

[0014] The impedance fixing unit includes a fixed capacitor unit;

[0015] The capacitance values ​​of each impedance-fixing unit are equal.

[0016] Optionally, the power distribution module includes n power distribution units, where n is an odd number greater than 1;

[0017] The n power distribution units include one impedance-adjustable unit and n-1 impedance-fixed units;

[0018] The impedance-adjustable unit is located in the middle of each of the power distribution units.

[0019] Optionally, the adjustable inductor unit includes a saturated inductor; the fixed capacitor unit includes a fixed vacuum capacitor.

[0020] Optionally, the impedance-adjustable unit further includes a first filtering unit and a second filtering unit;

[0021] The first filter unit is connected between the power divider input terminal and the first terminal of the adjustable inductor unit;

[0022] The second filter unit is connected between the second end of the adjustable inductor unit and the power divider output end.

[0023] Optionally, the radio frequency power module includes a first radio frequency power supply and a second radio frequency power supply;

[0024] The first radio frequency power supply is used to output the first radio frequency signal;

[0025] The second radio frequency power supply is used to output the second radio frequency signal.

[0026] Optionally, the RF output device provided in this embodiment further includes a dual-frequency impedance matching device;

[0027] The input terminal of the dual-frequency impedance matching device is connected to the output terminal of the RF power supply module, and the output terminal of the dual-frequency impedance matching device is connected to the power divider input terminal of the power distribution module.

[0028] Optionally, the frequency range of the first radio frequency signal is 11MHz~16MHz;

[0029] The frequency range of the second radio frequency signal is 300KHz~500KHz.

[0030] According to another aspect of the present invention, a semiconductor process apparatus is provided, the semiconductor process apparatus including a process chamber and a radio frequency output device provided in any embodiment of the present invention;

[0031] The process chamber includes a chamber body and multiple electrode assemblies located within the chamber body;

[0032] Each power divider output terminal of the power distribution module of the radio frequency output device is electrically connected to the corresponding electrode assembly in the process chamber.

[0033] This invention provides a radio frequency (RF) output device. The RF power module in this device can output a first RF signal and a second RF signal with different frequencies. Each power distribution unit in the power distribution module can receive and simultaneously output the first and second RF signals. Multiple power distribution units include at least one impedance-adjustable unit. The impedance-adjustable unit can control the power distribution ratio of the first RF signal among the power distribution units without affecting the power distribution ratio of the second RF signal among the power distribution units, and vice versa. In other words, the power distribution ratios of the first and second RF signals among the power distribution units can be controlled independently according to actual needs without affecting each other. In summary, the RF output device provided by this invention can ensure that the power distribution ratios of multiple RF signals of different frequencies are adjustable and do not affect each other in the same power distribution module, thereby improving the manufacturing accuracy of semiconductor devices.

[0034] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of a radio frequency output device connected to multiple loads according to an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention;

[0039] Figure 4 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention. Detailed Implementation

[0040] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0041] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0042] Figure 1 This is a schematic diagram of a radio frequency output device connected to multiple loads according to an embodiment of the present invention. (Refer to...) Figure 1The radio frequency output device 100 provided in this embodiment includes: a radio frequency power supply module 110 and a power distribution module 120; the radio frequency power supply module 110 is used to output a first radio frequency signal and a second radio frequency signal, wherein the frequency of the first radio frequency signal is greater than the frequency of the second radio frequency signal; the power distribution module 120 includes a power distribution input terminal, a plurality of power distribution output terminals and a plurality of power distribution units 121; the power distribution units 121 are located between the power distribution input terminal and the power distribution output terminal; the power distribution input terminal is used to receive the first radio frequency signal and the second radio frequency signal; the plurality of power distribution units 121 include at least one impedance adjustable unit 101 and at least one impedance fixed unit 102; the impedance adjustable unit 101 is used to control the power distribution ratio of the first radio frequency signal among the power distribution units 121 in the power distribution module 120 without affecting the power distribution ratio of the second radio frequency signal among the power distribution units 121, and to control the power distribution ratio of the second radio frequency signal among the power distribution units 121 in the power distribution module 120 without affecting the power distribution ratio of the first radio frequency signal among the power distribution units 121.

[0043] Specifically, the power allocation ratio of the first radio frequency signal among the power allocation units 121 in the power allocation module 120 can be 1:1:1, 1:2:1, or 1:3:1. The power allocation ratio of the second radio frequency signal among the power allocation units 121 in the power allocation module 120 can also be 1:1:1, 1:2:1, or 1:3:1.

[0044] The number of power divider input terminals can be one. The output terminal of the RF power module 110 can be directly connected to the power divider input terminal. Alternatively, a dual-frequency impedance matching device or two single-frequency impedance matching devices can be set between the output terminal of the RF power module 110 and the power divider input terminal. The number of power divider output terminals can be two, three, four, or five, etc. The number of power distribution units 121 is equal to the number of power divider output terminals, with one power distribution unit 121 connected between each power divider input terminal and each power divider output terminal.

[0045] Each power divider output terminal is connected to a load 210. The load 210 receives the radio frequency signal output from the power divider output terminal it is connected to, and the load 210 can ionize the process gas to generate plasma. The loads 210 connected to multiple power divider output terminals can be of the same type or different types. The multiple loads 210 connected to each power divider output terminal of the power distribution module 120 can be located in the same process chamber, that is, multiple loads 210 correspond to one process chamber, or they can be located in different process chambers, that is, each load 210 corresponds to one process chamber.

[0046] The frequency of the first radio frequency (RF) signal can be 13.56MHz, and the frequency of the second RF signal can be 400kHz. The RF power module 110 can output the first and second RF signals simultaneously, or output either the first or second RF signal individually. When the RF power module 110 outputs both the first and second RF signals simultaneously, the power divider input terminal can simultaneously receive both the first and second RF signals, and each power divider output terminal can simultaneously output both the first and second RF signals. That is, each power distribution unit 121 in the power distribution module 120 can simultaneously allow both the first and second RF signals to pass through. The load 210 connected to the power divider output terminal can simultaneously receive both the first and second RF signals.

[0047] The impedance-adjustable unit 101 is a power distribution unit 121 with an adjustable impedance value. The impedance-adjustable unit 101 may include an adjustable capacitor, an adjustable inductor, or interconnected adjustable capacitors and inductors. The impedance-fixed unit 102 may be a power distribution unit 121 with a fixed impedance value. The power distribution module 120 may contain one or more impedance-adjustable units 101, and the power distribution module 120 may contain one or more impedance-fixed units 102.

[0048] When the impedance value of the impedance-adjustable unit 101 changes, the output power of the impedance-adjustable unit 101 will change. The total power of the radio frequency signals of the same frequency received by the power distribution module 120 is constant. When the output power of one power distribution unit 121 changes, the output power of the remaining power distribution units 121 changes accordingly. Therefore, the change in the output power of the impedance-adjustable unit 101 will cause a change in the output power of the impedance-fixed unit 102, that is, the power distribution ratio among the power distribution units 121 will change. In this embodiment, the power distribution module 120 can control the power distribution ratio of the first radio frequency signal and the second radio frequency signal among the power distribution units 121 by adjusting the impedance value of the impedance-adjustable unit 101, without needing to adjust the impedance value in each power distribution unit 121, making the adjustment method simple. Users can set the desired power distribution ratio of the first radio frequency signal and the second radio frequency signal among the power distribution units 121 according to actual needs.

[0049] In this embodiment, the impedance adjustable unit 101 adjusts the power of the first radio frequency signal and the power of the second radio frequency signal independently and without affecting each other. The impedance adjustable unit 101 controls the power distribution ratio of the first radio frequency signal among the power distribution units 121 without affecting the power distribution ratio of the second radio frequency signal among the power distribution units 121, and similarly, it controls the power distribution ratio of the second radio frequency signal among the power distribution units 121 without affecting the power distribution ratio of the first radio frequency signal among the power distribution units 121. For example, when there are three power distribution units 121, the power distribution ratio of the first radio frequency signal among the power distribution units 121 is 1:2:1, and the power distribution ratio of the second radio frequency signal among the power distribution units 121 is 1:1:1, adjusting the impedance value in the impedance adjustable unit 101 can change the power distribution ratio of the first radio frequency signal among the power distribution units 121 to 1:1:1, while still ensuring that the power distribution ratio of the second radio frequency signal among the power distribution units 121 remains 1:1:1.

[0050] This embodiment provides a radio frequency (RF) output device. The RF power module in this device can output a first RF signal and a second RF signal with different frequencies. Each power distribution unit in the power distribution module can receive and simultaneously output the first and second RF signals. Multiple power distribution units include at least one impedance-adjustable unit. The impedance-adjustable unit can control the power distribution ratio of the first RF signal among the power distribution units without affecting the power distribution ratio of the second RF signal among the power distribution units, and vice versa. In other words, the power distribution ratios of the first and second RF signals among the power distribution units can be controlled independently according to actual needs without affecting each other. In summary, the RF output device provided in this embodiment can ensure that the power distribution ratios of multiple RF signals of different frequencies are adjustable and do not affect each other in the same power distribution module, thereby improving the manufacturing accuracy of semiconductor devices.

[0051] Optional, Figure 2 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention, with reference to... Figure 2The impedance adjustable unit 101 includes an adjustable capacitor unit 103 and an adjustable inductor unit 104 connected in parallel. The adjustable capacitor unit 103 is used to control the power distribution ratio of the first radio frequency signal in each power distribution unit 121, and does not affect the power distribution ratio of the second radio frequency signal in each power distribution unit 121. The adjustable inductor unit 104 is used to control the power distribution ratio of the second radio frequency signal in each power distribution unit 121, and does not affect the power distribution ratio of the first radio frequency signal in each power distribution unit 121.

[0052] Specifically, the adjustable capacitor unit 103 may include an adjustable capacitor CV, and the adjustable inductor unit 104 may include an adjustable inductor.

[0053] When the inductance value of the adjustable inductor unit 104 is not adjusted, adjusting the capacitance value of the adjustable capacitor unit 103 can control the power distribution ratio of the first radio frequency signal among the power distribution units 121, while the power distribution ratio of the second radio frequency signal in each power distribution unit 121 remains unchanged.

[0054] In this embodiment, the change in capacitance value of adjustable capacitor unit 103 has virtually no effect on the power allocation ratio of the second radio frequency signal, and the change in inductance value of adjustable inductor unit 104 has virtually no effect on the power allocation ratio of the first radio frequency signal. Therefore, the capacitance value of adjustable capacitor unit 103 and the inductance value of adjustable inductor unit 104 can be adjusted simultaneously to control the power allocation ratio of the first radio frequency signal among each power allocation unit 121 and the power allocation ratio of the second radio frequency signal among each power allocation unit 121, without having to make the power allocation ratio of the first radio frequency signal among each power allocation unit 121 equal to the power allocation ratio of the second radio frequency signal among each power allocation unit 121.

[0055] The radio frequency output device 100 provided in this embodiment has a simple structure and can simultaneously control the power distribution ratio of the first radio frequency signal and the second radio frequency signal among the power distribution units 121.

[0056] Optional, continue to refer to Figure 2 The power distribution module 120 includes at least two impedance fixing units 102; each impedance fixing unit 102 includes a fixed capacitor unit; and the capacitance values ​​of each impedance fixing unit 102 are equal.

[0057] Specifically, the capacitance values ​​of each impedance fixing unit 102 are equal, which can also be understood as the impedance values ​​of each impedance fixing unit 102 being equal.

[0058] Both the first and second radio frequency signals can be input to the load 210 through the fixed capacitor unit. When the capacitance value of the impedance adjustable unit 101 changes, the power of the first radio frequency signal output by the fixed capacitor unit will change; when the inductance value of the impedance adjustable unit 101 changes, the power of the second radio frequency signal output by the fixed capacitor unit will change.

[0059] In this embodiment, the capacitance values ​​of multiple impedance-fixing units 102 are set to be equal, which ensures that the output power of each impedance-fixing unit 102 is equal, while also ensuring that the output power of each impedance-fixing unit 102 changes simultaneously. Furthermore, the power distribution ratio between any two impedance-fixing units 102 is always maintained at 1:1. In some application scenarios, multiple RF signals of the same frequency are required, and the power required by a portion of the load is consistent, but it is not necessary for the power required by each load to be consistent. In such cases, the RF output device provided in this embodiment can be used.

[0060] When the radio frequency output device provided in this embodiment is applied in a semiconductor process equipment, it can be guaranteed that the power of the first radio frequency signal received by at least two loads is equal, and the power of the second radio frequency signal is equal.

[0061] Optional, continue to refer to Figure 2 The power distribution module 120 includes n power distribution units 121, where n is an odd number greater than 1; the n power distribution units 121 include an impedance adjustable unit 101 and n-1 impedance fixed units 102; the impedance adjustable unit 101 is located in the middle position of each power distribution unit 121.

[0062] Specifically, the number of power distribution units 121 is set to an odd number, and the impedance adjustable unit 101 is placed in the middle position of each power distribution unit 121, that is, the impedance adjustable unit 101 is located at the (n+1) / 2th position in the power distribution module 120. This ensures that the number of impedance fixed units 102 on both sides of the impedance adjustable unit 101 is equal. This placement method can further ensure that the power distribution ratio between any two impedance fixed units 102 is 1:1 after the capacitance and inductance values ​​in the impedance adjustable unit 101 change.

[0063] Optional, continue to refer to Figure 2 The adjustable inductor unit 104 includes a saturated inductor L1; the fixed capacitor unit includes a fixed vacuum capacitor C1.

[0064] Specifically, the adjustable inductor unit 104 includes a saturated inductor L1. This ensures that changes in the inductance value of the saturated inductor L1 affect the power distribution ratio of the second radio frequency signal among the power distribution units 121, while maintaining the power distribution ratio of the first radio frequency signal among the power distribution units 121. In this embodiment, the inductance value of the saturated inductor L1 can be changed by adjusting the permeability of the magnetic ring in the saturated inductor L1. This method of adjusting the inductance value is simple and allows for continuous adjustment.

[0065] The fixed vacuum capacitor C1 has the characteristics of high voltage resistance, small size and low loss. Its placement in the RF output device 100 provided in this embodiment can improve the reliability of the RF output device 100. Furthermore, the placement of the fixed vacuum capacitor C1 can also ensure that both the first RF signal and the second RF signal can pass through the fixed vacuum capacitor C1.

[0066] Optional, Figure 3 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention, with reference to... Figure 3 The impedance adjustable unit 101 also includes a first filter unit 105 and a second filter unit 106; the first filter unit 105 is connected between the power divider input terminal and the first terminal of the adjustable inductor unit 104; the second filter unit 106 is connected between the second terminal of the adjustable inductor unit 104 and the power divider output terminal.

[0067] Specifically, the first filter unit 105 may include a first inductor L2 and a first capacitor C2. The first end of the first inductor L2 is connected to the power divider input terminal and the first end of the adjustable capacitor unit 103. The second end of the first inductor L2 is connected to the first end of the adjustable inductor unit 104. The first end of the first capacitor C2 is connected to the second end of the first inductor L2, and the second end of the first capacitor C2 is grounded. The second filter unit 106 may include a second inductor L3 and a second capacitor C3. The first end of the second capacitor C3 is connected to the second end of the adjustable inductor unit 104, and the second end of the second capacitor C3 is grounded. The first end of the second inductor L3 is connected to the second end of the adjustable inductor unit 104, and the second end of the second inductor L3 is connected to the second end of the adjustable capacitor unit 103 and the power divider output terminal.

[0068] The first filter unit 105 and the second filter unit 106 can filter out noise and further improve the accuracy of the power allocation ratio between each power allocation unit 121.

[0069] Optional, Figure 4 This is a schematic diagram of another radio frequency output device connected to multiple loads according to an embodiment of the present invention, with reference to... Figure 4The radio frequency power module 110 includes a first radio frequency power supply 111 and a second radio frequency power supply 112; the first radio frequency power supply 111 is used to output a first radio frequency signal; and the second radio frequency power supply 112 is used to output a second radio frequency signal.

[0070] Specifically, in this embodiment, by setting the first radio frequency power supply 111 and the second radio frequency power supply 112 to output the first radio frequency signal and the second radio frequency signal respectively, the frequency of the first radio frequency signal and the frequency of the second radio frequency signal can be precisely controlled.

[0071] Optional, continue to refer to Figure 4 The RF output device 100 provided in this embodiment also includes a dual-frequency impedance matching device 130; the input terminal of the dual-frequency impedance matching device 130 is connected to the output terminal of the RF power module 110, and the output terminal of the dual-frequency impedance matching device 130 is connected to the power distribution input terminal of the power distribution module 120.

[0072] Specifically, the input terminal of the dual-frequency impedance matching device 130 is connected to the output terminal of the first RF power supply 111 and the output terminal of the second RF power supply 112. The dual-frequency impedance matching device 130 can simultaneously achieve impedance matching between the first RF power supply 111 and each load 210, and impedance matching between the second RF power supply 112 and each load 210.

[0073] Optionally, the frequency range of the first radio frequency signal is 11MHz~16MHz; the frequency range of the second radio frequency signal is 300KHz~500KHz. It can be seen that this embodiment can allocate the power of radio frequency signals of multiple frequencies, and has a wide range of applications.

[0074] For example, the frequency of the first radio frequency signal can be 11MHz, 12MHz, 13MHz, 14MHz or 15MHz, etc., and the frequency of the second radio frequency signal can be 300KHz, 350KHz, 400KHz, 450KHz or 500KHz, etc.

[0075] This embodiment also provides a semiconductor process apparatus, which includes a process chamber and a radio frequency output device provided in any embodiment of the present invention; the process chamber includes a chamber body and a plurality of electrode assemblies located within the chamber body; each power distribution output terminal of the power distribution module of the radio frequency output device is electrically connected to the corresponding electrode assembly within the process chamber.

[0076] Specifically, the electrode assembly can be an inductor coil, or it can be an electrode from an electrostatic chuck power supply. The chamber body is used to contain the process gas, and the electrode assembly can ionize the process gas to generate plasma.

[0077] The semiconductor process equipment provided in this embodiment includes a radio frequency (RF) output device. Since the semiconductor process equipment provided in this embodiment includes the RF output device provided in any embodiment of the present invention, it also includes the technical features and corresponding beneficial effects of the RF output device.

[0078] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0079] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A radio frequency output device, characterized in that, include: An RF power supply module is used to output a first RF signal and a second RF signal, wherein the frequency of the first RF signal is greater than the frequency of the second RF signal; A power distribution module includes a power distribution input terminal, multiple power distribution output terminals, and multiple power distribution units; the power distribution units are located between the power distribution input terminal and the power distribution output terminals; the power distribution input terminal is used to receive the first radio frequency signal and the second radio frequency signal; the multiple power distribution units include at least one impedance adjustable unit and at least one impedance fixed unit. The impedance adjustable unit is used to control the power allocation ratio of the first radio frequency signal among the power allocation units in the power allocation module without affecting the power allocation ratio of the second radio frequency signal among the power allocation units, and the power allocation ratio of the second radio frequency signal among the power allocation units in the power allocation module without affecting the power allocation ratio of the first radio frequency signal among the power allocation units.

2. The radio frequency output device according to claim 1, characterized in that, The impedance-adjustable unit includes an adjustable capacitor unit and an adjustable inductor unit connected in parallel; The adjustable capacitor unit is used to control the power allocation ratio of the first radio frequency signal in each of the power allocation units, and does not affect the power allocation ratio of the second radio frequency signal in each of the power allocation units; The adjustable inductor unit is used to control the power allocation ratio of the second radio frequency signal in each of the power allocation units, without affecting the power allocation ratio of the first radio frequency signal in each of the power allocation units.

3. The radio frequency output device according to claim 2, characterized in that, The power distribution module includes at least two impedance fixing units; The impedance fixing unit includes a fixed capacitor unit; The capacitance values ​​of each impedance-fixing unit are equal.

4. The radio frequency output device according to claim 1, characterized in that, The power distribution module includes n power distribution units, where n is an odd number greater than 1; The n power distribution units include one impedance-adjustable unit and n-1 impedance-fixed units; The impedance-adjustable unit is located in the middle of each of the power distribution units.

5. The radio frequency output device according to claim 3, characterized in that, The adjustable inductor unit includes a saturated inductor; the fixed capacitor unit includes a fixed vacuum capacitor.

6. The radio frequency output device according to claim 2, characterized in that, The impedance-adjustable unit further includes a first filter unit and a second filter unit; the first filter unit is connected between the power divider input terminal and the first terminal of the adjustable inductor unit; the second filter unit is connected between the second terminal of the adjustable inductor unit and the power divider output terminal.

7. The radio frequency output device according to claim 1, characterized in that, The radio frequency power module includes a first radio frequency power supply and a second radio frequency power supply. The first radio frequency power supply is used to output the first radio frequency signal; The second radio frequency power supply is used to output the second radio frequency signal.

8. The radio frequency output device according to claim 1, characterized in that, It also includes a dual-frequency impedance matching circuit; The input terminal of the dual-frequency impedance matching device is connected to the output terminal of the RF power supply module, and the output terminal of the dual-frequency impedance matching device is connected to the power divider input terminal of the power distribution module.

9. The radio frequency output device according to claim 1, characterized in that, The frequency range of the first radio frequency signal is 11MHz~16MHz; The frequency range of the second radio frequency signal is 300KHz~500KHz.

10. A semiconductor process apparatus, characterized in that, Includes a process chamber and the radio frequency output device as described in any one of claims 1-9; The process chamber includes a chamber body and multiple electrode assemblies located within the chamber body; Each power divider output terminal of the power distribution module of the radio frequency output device is electrically connected to the corresponding electrode assembly in the process chamber.

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