Method for improving device stability by solvent polishing perovskite surface

Abstract

The application provides a method for improving the stability of a device with a perovskite surface polished by a solvent, in particular a method for improving the stability of a perovskite solar cell, which comprises arranging a perovskite layer on the surface of a first transport layer away from a substrate, coating a polishing agent on the surface of the perovskite layer away from the first transport layer, and performing polishing treatment and annealing treatment to obtain a treated perovskite layer; the polishing agent comprises a first solvent, a second solvent and a third solvent, and the mass ratio of the first solvent, the second solvent and the third solvent is 100: (0.1-5): (0.1-5). The polishing technology can not only eliminate the defect layer, but also melt the surface grain boundary to form a barrier to hinder ion migration, greatly improve the stability of the perovskite device, and reduce the passivation cost.

Description

Technical Field

[0001] This invention relates to the technical field of solar cells, and more particularly to a method for improving device stability by solvent polishing of perovskite surfaces. Background Technology

[0002] In just over a decade, the certified photoelectric conversion efficiency (PCE) of perovskite solar cells (PSCs) has soared from 3.8% to over 26%, reaching a level comparable to crystalline silicon cells and earning them the reputation of being "disruptors" in the photovoltaic field. However, the core bottleneck hindering their commercialization and large-scale application lies in their long-term stability.

[0003] The intrinsic instabilities of perovskite materials and devices mainly stem from interface defects. During solution-based fabrication of polycrystalline perovskite thin films, numerous defect states are generated at the surface and grain boundaries. These defect sites (especially halogen vacancies) are ions in the perovskite (such as I₂). - MA + Pb² + This provides migration pathways. Surface defect sites are more likely to react with water, oxygen, heat, and light in the environment, leading to the decomposition of the perovskite structure (such as PbI2 formation and the volatilization of organic cations).

[0004] Surface passivation is a key technology that has emerged in this context. Its core idea is to introduce a passivation layer (or modification layer, capping layer) on the perovskite surface through physical or chemical methods, selectively passivating surface defects and blocking the channels for external environmental erosion, while not affecting the effective extraction and transport of charge carriers, thereby improving the efficiency and stability of the device.

[0005] However, surface passivation technology still faces many challenges, which is also the focus of current research. For example, some highly efficient passivating agents (such as certain organic amine salts and ammonium iodide) have poor thermal stability and may decompose or volatilize during subsequent processes (such as hole transport layer sintering) or device operation, leading to passivation failure or even introducing new degradation products that seriously affect device stability. Therefore, there is an urgent need to provide a new surface passivation technology. Summary of the Invention

[0006] Surface passivation is a type of interface treatment. Most research focuses on "additive passivation," introducing specific chemical groups that bind to surface defect sites to improve the optoelectronic performance of devices. This invention proposes a "subtractive passivation" method, which uses selective solvents to treat the perovskite surface, polishing the surface layer with a high number of defects in situ without introducing other molecular structures. This method significantly improves the stability of perovskite devices and reduces passivation costs, providing guidance for industrial applications.

[0007] The inventors discovered that a paper titled "Spontaneous formation of robust two-dimensional perovskite phases," co-authored by Nerl Zhu Kai and the Mougi G. Bawendi research group at MIT, demonstrates the dynamic evolution of 2D / 3D perovskite stacks in devices during their end-of-life decomposition. Initially phase-pure two-dimensional interlayers can undergo different evolutions, leading to varying device stability. The study shows that mixed solvents can be used to adjust crystallinity and phase purity, thereby forming robust two-dimensional interlayers. This paper uses IPA+DMSO as a mixed solvent and introduces passivation materials to form a two-dimensional passivation layer on the perovskite surface. However, two-dimensional materials are prone to phase separation in subsequent work, and DMSO is prone to incomplete volatilization at 100 degrees Celsius, causing secondary damage to the film. More importantly, IPA+DMSO has a higher solubility for organic iodides than lead iodide, thus easily causing secondary enrichment of surface Pb2+ during post-processing.

[0008] Most studies address perovskite interface defects using an "additive patching" strategy. This patent employs a "subtractive polishing" strategy to eliminate the defect layer on the perovskite surface. Furthermore, since perovskite components are often AX+BX2, and solvents have varying solubilities for different perovskite components, mixed solvents are often required for uniform surface polishing.

[0009] Subtractive polishing techniques can not only eliminate defect layers but also melt surface grain boundaries, forming a barrier that hinders ion migration. Common solvents for dissolving perovskite have different solubilities for different components, as shown in Table 1 below.

[0010] Table 1

[0011] According to Table 1, except for GBL, GVL, and ACN, the other solvents have a strong ability to dissolve lead iodide (FAI). To dissolve excess lead iodide on the surface, the polishing solvent can be composed of three types of solvents: First, non-dissolving solvents, mainly used to disperse dissolving solvents. Second, easily soluble solvents, mainly including DMSO, NMP, DMPU, DMF, NEP, TMSO, etc. Third, solvents that are easily soluble in lead iodide and slightly soluble in organic iodides, including GBL, GVL, ACN, etc. These three types are mixed in appropriate proportions to form the polishing agent.

[0012] In one aspect, the present invention provides a method for improving the stability of perovskite solar cells. According to an embodiment of the present invention, the method includes: A substrate is provided, and a first transmission layer is disposed on one side surface of the substrate; A perovskite layer is disposed on the surface of the first transport layer away from the substrate. A polishing agent is applied to the surface of the perovskite layer away from the first transport layer, and polishing and annealing are performed to obtain the treated perovskite layer. A second transport layer is disposed on the surface of the treated perovskite layer away from the first transport layer; A top electrode is disposed on the surface of the second transport layer away from the treated perovskite layer to obtain a perovskite solar cell. The polishing agent includes a first solvent, a second solvent, and a third solvent; The first solvent includes at least one of toluene, chlorobenzene, anisole, hexane, heptane, octane, diethyl ether, and isopropanol; The second solvent includes at least one of dimethyl sulfoxide, N-methylpyrrolidone, 1,3-dimethyl-3,4,5,6-tetrahydro-2-pyrimidinone, N,N-dimethylformamide, N-ethylpyrrolidone, and tetramethyl sulfoxide; The third solvent includes at least one of γ-butyrolactone, γ-valerolactone, and acetonitrile; The volume ratio of the first solvent, the second solvent, and the third solvent is 100:(0.1-5):(0.1-5).

[0013] According to embodiments of the present invention, the method for improving the stability of perovskite solar cells described above may further include at least one of the following additional technical features: According to an embodiment of the present invention, the polishing process takes 10s-100s.

[0014] According to an embodiment of the present invention, the first solvent, the second solvent, and the third solvent are isopropanol, N,N-dimethylformamide, and acetonitrile, respectively, and the volume ratio of the first solvent, the second solvent, and the third solvent is 100:2:2.

[0015] According to an embodiment of the present invention, the amount of polishing agent used on the surface of the perovskite layer is 10 μL / cm. 2 -50μL / cm 2 .

[0016] According to an embodiment of the present invention, the annealing treatment is performed at a temperature of 50°C-160°C for a time of 5 min-20 min.

[0017] According to an embodiment of the present invention, the perovskite layer is made of ABX3, wherein the A ion includes at least one of formamidinium cation and cesium ion, the B ion includes Pb, and the X ion includes at least one of I, Cl and Br.

[0018] In another aspect of the invention, a perovskite solar cell prepared according to the method described above is also proposed.

[0019] According to embodiments of the present invention, the perovskite solar cell may further include at least one of the following additional technical features: According to an embodiment of the present invention, the substrate is made of at least one of indium tin oxide and fluorine-doped tin oxide.

[0020] According to an embodiment of the present invention, when the perovskite solar cell is in an upright structure, the material of the first transport layer includes at least one of SnO2, TiO2, and ZnO, and the material of the second transport layer includes at least one of Spiro-OMeTAD (2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene), PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), and P3HT (poly(3-hexylthiophene)).

[0021] According to an embodiment of the present invention, when the perovskite solar cell is an inverted structure, the material of the first transport layer includes at least one of Me-2PACz (N-methyl-bisphenylcarbazolephosphonic acid), MeO-2PACz ((4-methoxyphenyl)-bisphenylcarbazolephosphonic acid), Me-4PACz (N-methyl-biphenylcarbazolephosphonic acid), MeO-4PACz ((4-methoxyphenyl)-biphenylcarbazolephosphonic acid), Ph-4PACz (N-phenyl-biphenylcarbazolephosphonic acid), 4PADCB ([4-(7H-dibenzo[c,g]carbazole-7-yl)butyl]phosphonic acid), H1100 ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid), and MPA-CPA ((4-methoxyphenyl)amine-carboxyphenylphosphonic acid), and the material of the second transport layer includes at least one of C60 and PCBM.

[0022] According to an embodiment of the present invention, the material of the top electrode includes at least one of Cu, Ag, and Au.

[0023] In one aspect of the invention, a method for improving the stability of perovskite solar cells is proposed. According to an embodiment of the invention, the method includes fabricating a perovskite device having, in sequence, a conductive substrate, a first transport layer, a perovskite layer, a second transport layer, and a top electrode. A polishing agent is used when coating the first transport layer onto the perovskite layer. The polishing solvent is configured as follows: based on the solubility difference between the AX and BX2 components in the perovskite, a mixture of three or more solvents is selected, wherein at least one solvent is the main solvent, which hardly dissolves the perovskite component and serves to dilute the other solvents to prevent complete destruction of the perovskite layer. The other two solvents have high solubility for either the AX or BX2 component. The ratio of the mixed solvents is optimized through pre-experiments to ensure uniform and controllable dissolution of the surface defect layer.

[0024] According to embodiments of the present invention, the polishing solvent can be composed of three types of solvents: The first type is a non-dissolving solvent, mainly used to disperse dissolving solvents, primarily including toluene, chlorobenzene, anisole, hexane, heptane, octane, diethyl ether, etc. The second type is a readily soluble solvent, primarily including dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), 1,3-dimethyl-3,4,5,6-tetrahydro-2-pyrimidinone (DMPU), N,N-dimethylformamide (DMF), N-ethylpyrrolidone (NEP), tetramethyl sulfoxide (TMSO) (CAS: 1600-44-8), etc. The third type is a solvent that readily soluble in lead iodide and slightly soluble in organic iodides, including γ-butyrolactone (GBL), γ-valerolactone (GVL), ACN, etc. The three are mixed in an appropriate ratio to form a polishing agent. The mixing ratio range is 100:(0-5):(0-5). According to an embodiment of the present invention, during the preparation of the perovskite layer, after the perovskite has cooled following annealing, a polishing solvent is uniformly coated onto the surface of the perovskite film using spin coating, immersion coating, or slot coating. The solvent is then removed by annealing, allowing the dissolved surface of the perovskite to undergo secondary growth to form a film. The annealing temperature is 50-160°C, and the annealing time is 5-20 minutes. According to embodiments of the present invention, in the perovskite device structure, the conductive substrate can be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), etc.

[0025] According to embodiments of the present invention, for positive devices, the first transport layer can be an electron transport material such as SnO2, TiO2, or ZnO, with a thickness ranging from 10 to 100 nm. The second transport layer is generally a hole transport material such as Spiro-OMeTAD, with a thickness ranging from 10 to 20 nm.

[0026] According to embodiments of the present invention, for inversion devices, the first transport layer is generally a SAM-type hole material, such as Me-2PACz, MeO-2PACz, Me-4PACz, MeO-4PACz, Ph-4PACz, 4PADCB, H1100, MPA-CPA, etc., with a thickness ranging from 2 to 10 nm. The second transport layer material is generally a fullerene derivative such as C60 or PCBM, with a thickness ranging from 5 to 15 nm.

[0027] According to embodiments of the present invention, the top electrode of the device is generally a metal electrode such as Cu, Ag, or Au, with a thickness ranging from 80 to 200 nm.

[0028] According to embodiments of the present invention, the technical solution of the present invention brings at least one of the following beneficial effects: 1) This invention adopts a "subtractive polishing" strategy to directly remove the surface defect layer, avoiding the interface complexity problem caused by the introduction of foreign molecules.

[0029] 2) By designing a mixed solvent, the different components of perovskite are dissolved in a balanced manner, avoiding component segregation or excessive erosion caused by a single solvent.

[0030] 3) This method is simple, low-cost, and easy to scale up, and can significantly improve the open-circuit voltage, fill factor, and stability of perovskite devices.

[0031] 4) Subtractive polishing technology can not only eliminate defect layers, but also melt surface grain boundaries to form a barrier that hinders ion migration. Detailed Implementation

[0032] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0033] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Furthermore, in the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0034] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0035] To facilitate understanding of the invention, certain technical and scientific terms are specifically defined below. Unless otherwise expressly defined elsewhere in this document, all other technical and scientific terms used herein have the meaning commonly understood by one of ordinary skill in the art to which this invention pertains.

[0036] In this document, the terms “comprising” or “including” are open-ended expressions, meaning they include the contents specified in this invention but do not exclude other aspects.

[0037] In this document, the terms “optionally,” “optionally,” or “optionally” generally refer to an event or condition that may, but may not, occur, and the description includes both cases in which the event or condition occurs and cases in which the event or condition does not occur.

[0038] The present invention will be explained below with reference to embodiments. Those skilled in the art will understand that the following embodiments are for illustrative purposes only and should not be considered as limiting the scope of the invention. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in the field or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be obtained commercially.

[0039] Example 1 1.1 The device structure from bottom to top is ITO / Me-4PACz / PVK / C60 / BCP / Ag 1.2 Me-4PACz at a concentration of 1 mg / mL was dissolved in ultra-dry ethanol, spin-coated at 3000 rpm for 30 s, and annealed at 100℃ for 10 min.

[0040] 1.3 The perovskite component is FA 0.9 Cs 0.1 PbI3 was dissolved in DMF+DMSO (4:1) at a concentration of 1.5 M. Chlorobenzene was added dropwise during spin coating at 4500 rpm for 30 s, followed by another 10 s of spin coating. Then, it was annealed at 150 °C for 20 min.

[0041] 1.4 Polishing treatment: A solvent mixture of chlorobenzene, NMP, and GBL was dropped onto the annealed perovskite film, spin-coated at 3000 rpm for 30 s, and then annealed at 100℃ for 10 min. The mixing ratio was 100:1:4.

[0042] 1.5 C60 was deposited by vapor deposition, SnO2 was sputtered by magnetron sputtering, and Ag was deposited by vapor deposition on the post-treated perovskite film. The thicknesses were 6 nm, 15 nm, and 100 nm, respectively.

[0043] 1.6 Perform IV tests on the fabricated devices respectively. 1.7 The batteries that underwent IV testing were placed in a glove box filled with nitrogen for thermal aging monitoring at 85°C.

[0044] The following are the photovoltaic performance test data of the cells with and without polishing treatment, with data for 5 cells in each group:

[0045] The following are monitoring data for thermal aging at 85℃ in a nitrogen atmosphere.

[0046] Example 2 2.1 The device structure from bottom to top is ITO / Me-4PACz / PVK / C60 / BCP / Ag 2.2 Me-4PACz at a concentration of 1 mg / mL was dissolved in ultra-dry ethanol, spin-coated at 3000 rpm for 30 s, and annealed at 100℃ for 10 min.

[0047] 2.3 The perovskite component is FA 0.9 Cs 0.1 PbI3 was dissolved in DMF+DMSO (4:1) at a concentration of 1.5 M. Chlorobenzene was added dropwise during spin coating at 4500 rpm for 30 s, followed by another 10 s of spin coating. Then, it was annealed at 150 °C for 20 min.

[0048] 2.4 Polishing treatment: A solvent mixture of anisole, NMP, and GVL was dropped onto the annealed perovskite film, spin-coated at 3000 rpm for 30 s, and then annealed at 100℃ for 10 min. The mixing ratio was 100:2:5.

[0049] 2.5 C60 was deposited by vapor deposition, SnO2 was sputtered by magnetron sputtering, and Ag was deposited by vapor deposition on the post-treated perovskite film. The thicknesses were 6 nm, 15 nm, and 100 nm, respectively.

[0050] 2.6 Perform IV tests on the fabricated devices respectively. 2.7 The batteries that underwent IV testing were placed in a glove box filled with nitrogen for thermal aging monitoring at 85°C.

[0051] The following are the photovoltaic performance test data of the cells with and without polishing treatment, with data for 5 cells in each group:

[0052] The following are monitoring data for thermal aging at 85℃ in a nitrogen atmosphere.

[0053] Example 3 3.1 The device structure from bottom to top is ITO / Me-4PACz / PVK / C60 / BCP / Ag 3.2 Me-4PACz at a concentration of 1 mg / mL was dissolved in ultra-dry ethanol, spin-coated at 3000 rpm for 30 s, and annealed at 100℃ for 10 min.

[0054] 3.3 The perovskite composition was FA0.9Cs0.1PbI3, dissolved in DMF+DMSO (4:1) at a concentration of 1.5 M. Chlorobenzene was added dropwise during spin coating at 4500 rpm for 30 s, followed by another 10 s spin coating. Then, it was annealed at 150 °C for 20 min.

[0055] 3.4 Polishing treatment: A solvent mixture of anisole and NMP was dropped onto the annealed perovskite film, spin-coated at 3000 rpm for 30 s, and then annealed at 100℃ for 10 min. The mixing ratio was 100:2.

[0056] 3.5 C60 was deposited by vapor deposition, SnO2 was sputtered by magnetron sputtering, and Ag was deposited by vapor deposition on the post-treated perovskite film. The thicknesses were 6 nm, 15 nm, and 100 nm, respectively.

[0057] 3.6 Perform IV tests on the fabricated devices respectively. 3.7 The batteries that underwent IV testing were placed in a glove box filled with nitrogen for thermal aging monitoring at 85°C.

[0058] The following are the photovoltaic performance test data of the cells with and without polishing treatment, with data for 5 cells in each group:

[0059] The following are monitoring data for thermal aging at 85℃ in a nitrogen atmosphere.

[0060] Example 4 4.1 The device structure from bottom to top is ITO / Me-4PACz / PVK / C60 / BCP / Ag 4.2 Me-4PACz at a concentration of 1 mg / mL was dissolved in ultra-dry ethanol, spin-coated at 3000 rpm for 30 s, and annealed at 100℃ for 10 min.

[0061] 4.3 The perovskite composition was FA0.9Cs0.1PbI3, dissolved in DMF+DMSO (4:1) at a concentration of 1.5 M. Chlorobenzene was added dropwise during spin coating at 4500 rpm for 30 s, followed by another 10 s spin coating. Then, it was annealed at 150 °C for 20 min.

[0062] 4.4 Polishing treatment: A solvent mixture of chlorobenzene, NMP, and GBL was dropped onto the annealed perovskite film, spin-coated at 3000 rpm for 30 s, and then annealed at 100℃ for 10 min. The mixing ratio was 100:6:7.

[0063] 4.5 C60 was deposited by vapor deposition, SnO2 was sputtered by magnetron sputtering, and Ag was deposited by vapor deposition on the post-treated perovskite film. The thicknesses were 6 nm, 15 nm, and 100 nm, respectively.

[0064] 4.6 Perform IV tests on the prepared devices respectively. 4.7 The cells that underwent IV testing were placed in a nitrogen-filled glove box for 85°C thermal aging monitoring. The following are the photovoltaic performance test data for cells with and without polishing treatment, with data for 5 cells in each group:

[0065] The following are monitoring data for thermal aging at 85℃ in a nitrogen atmosphere.

[0066] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0067] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for improving the stability of perovskite solar cells, characterized in that, include: A substrate is provided, and a first transmission layer is disposed on one side surface of the substrate; A perovskite layer is disposed on the surface of the first transport layer away from the substrate. A polishing agent is applied to the surface of the perovskite layer away from the first transport layer, and polishing and annealing are performed to obtain the treated perovskite layer. A second transport layer is disposed on the surface of the treated perovskite layer away from the first transport layer; A top electrode is disposed on the surface of the second transport layer away from the treated perovskite layer to obtain a perovskite solar cell. The polishing agent includes a first solvent, a second solvent, and a third solvent; The first solvent includes at least one of toluene, chlorobenzene, anisole, hexane, heptane, octane, diethyl ether, and isopropanol; The second solvent includes at least one of dimethyl sulfoxide, N-methylpyrrolidone, 1,3-dimethyl-3,4,5,6-tetrahydro-2-pyrimidinone, N,N-dimethylformamide, N-ethylpyrrolidone, and tetramethyl sulfoxide; The third solvent includes at least one of γ-butyrolactone, γ-valerolactone, and acetonitrile; The volume ratio of the first solvent, the second solvent, and the third solvent is 100:(0.1-5):(0.1-5).

2. The method according to claim 1, characterized in that, The polishing process takes 10s-100s; Optionally, the first solvent, the second solvent, and the third solvent are isopropanol, N,N-dimethylformamide, and acetonitrile, respectively, and the volume ratio of the first solvent, the second solvent, and the third solvent is 100:2:

2.

3. The method according to claim 1, characterized in that, The polishing agent is applied at a concentration of 10 μL / cm² on the surface of the perovskite layer. 2 -50μL / cm 2 .

4. The method according to any one of claims 1-3, characterized in that, The annealing process is performed at a temperature of 50℃-160℃ for a time of 5 min-20 min.

5. The method according to any one of claims 1-3, characterized in that, The perovskite layer is made of ABX3, wherein A ions include at least one of methylamine cations, formamidinium cations, and cesium ions, B ions include Pb, and X ions include at least one of I, Cl, and Br.

6. A perovskite solar cell prepared by the method according to any one of claims 1-5.

7. The perovskite solar cell according to claim 6, characterized in that, The substrate material includes at least one of indium tin oxide and fluorine-doped tin oxide.

8. The perovskite solar cell according to claim 6, characterized in that, When the perovskite solar cell is in an upright structure, the material of the first transport layer includes at least one of SnO2, TiO2, and ZnO, and the material of the second transport layer includes at least one of 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and poly(3-hexylthiophene).

9. The perovskite solar cell according to claim 6, characterized in that, When the perovskite solar cell is an inverted structure, the material of the first transport layer includes at least one of N-methyl-bisphenylcarbazolephosphonic acid, (4-methoxyphenyl)-bisphenylcarbazolephosphonic acid, N-methyl-biphenylcarbazolephosphonic acid, (4-methoxyphenyl)-biphenylcarbazolephosphonic acid, N-phenyl-biphenylcarbazolephosphonic acid, [4-(7H-dibenzo[c,g]carbazole-7-yl)butyl]phosphonic acid, [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, and (4-methoxyphenyl)amine-carboxyphenylphosphonic acid, and the material of the second transport layer includes at least one of C60 and PCBM.

10. The perovskite solar cell according to any one of claims 6-9, characterized in that, The material of the top electrode includes at least one of Cu, Ag, and Au.

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