A method for preparing a flexible perovskite solar cell

Abstract

The application discloses a preparation method of a flexible perovskite solar cell. The method selects appropriate lead-free perovskite raw materials, combines a roll-to-roll process and a slot extrusion technology, and adopts a UV curing process, so that efficient and large-scale continuous production of a perovskite flexible film is realized. The prepared flexible perovskite solar cell has high photoelectric conversion efficiency (PCE ≥ 10%~15%) and excellent mechanical properties.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, specifically to a method for fabricating a flexible perovskite solar cell. Background Technology

[0002] Perovskite optoelectronic materials, as star materials in the optoelectronic field, boast superior performance, low cost, and simple processing and manufacturing processes. Breakthroughs have been achieved in flexible solar cells, light-emitting devices, and detectors based on perovskite materials, demonstrating significant application prospects. In just 10 years, the photoelectric conversion efficiency of perovskite thin-film solar cells has increased from 3.8% to over 25.7%, with double-junction perovskite cells exceeding 31%, showcasing enormous commercial potential. Therefore, the industry is accelerating its industrialization efforts.

[0003] Flexible perovskite films are a core component of perovskite thin-film devices, and their quality directly determines the performance of these devices. Solution spin-coating is a conventional laboratory method for preparing flexible perovskite films and devices, offering high-quality films with good controllability. However, it is only suitable for small-area, small-batch production of flexible perovskite films and devices, and is not compatible with large-area, high-volume industrial manufacturing processes. Therefore, efficient, high-volume production of high-quality, uniform, large-area flexible perovskite films is a crucial pathway to advancing the industrialization of perovskite optoelectronic devices. Summary of the Invention

[0004] The purpose of this invention is to provide a method for preparing flexible perovskite solar cells, which realizes efficient and large-scale continuous production of flexible perovskite thin films. The prepared flexible perovskite solar cells have high photoelectric conversion efficiency (PCE ≥10%~15%) and excellent mechanical properties (bending radius ≤5 mm).

[0005] To achieve the above objectives, the solution of the present invention is: A method for fabricating a flexible perovskite solar cell includes the following steps: Step 1: First, wind the flexible silicone substrate onto the unwinding device and unwind it. Then, convey it to the plasma cleaner at a speed of 3~10 m / min for plasma cleaning. Step 2: Then, the cleaned silicone flexible substrate is transported to an ultraviolet ozone device to treat the surface of the silicone flexible substrate with ultraviolet ozone, reducing the surface contact angle of the silicone flexible substrate (from ≥80° to ≤30°), ensuring that there is no edge shrinkage or missed coating when the conductive paste is coated subsequently. Step 3: Then, the silicone flexible substrate treated with ultraviolet ozone is conveyed to the first slit coating head station, and the conductive paste is uniformly coated on the silicone flexible substrate using slit extrusion technology. Step 4: Then, the silicone flexible substrate coated with conductive paste is conveyed to the first ultraviolet lamp device for UV curing, thereby forming a polymer conductive layer on the surface of the silicone flexible substrate. Step 5: Then, the silicone flexible substrate with the polymer conductive layer formed on its surface is transported to the second slit coating head station, and the perovskite precursor solution is uniformly coated on the polymer conductive layer of the silicone flexible substrate using slit extrusion technology. Step 6: Then, the silicone flexible substrate coated with the perovskite precursor solution is transported to the second ultraviolet lamp device for UV curing, thereby forming a perovskite thin film layer on the surface of the polymer conductive layer. Step 7: Then, the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station, and the encapsulation protective liquid is coated on the perovskite thin film layer of the flexible silicone substrate using slit extrusion technology. Step 8: Then, the flexible silicone substrate coated with encapsulation protective liquid is transported to the third ultraviolet lamp curing device for UV curing, thereby forming an encapsulation protective layer on the perovskite thin film layer, completing the encapsulation, and obtaining the flexible perovskite solar cell. Step 9: Finally, the flexible perovskite solar cell is wound up onto the winding device; In step 3, the conductive paste comprises a polymeric conductive material and an organic solvent. The polymeric conductive material is poly(3,4-ethylenedioxythiophene) (PEDOT) or polyaniline (PANI), and the organic solvent is... N , N - Dimethylformamide (DMF), wherein the ratio of the polymer conductive material to the organic solvent is 1~5:15; In step 6, the perovskite precursor solution comprises a perovskite precursor, a mixed solvent, a UV photoinitiator, and a crystallization regulator. The mixed solvent is composed of dimethyl sulfoxide (DMSO) and γ-butyrolactone (GBL) at a volume ratio of 7:3. The concentration of the perovskite precursor after mixing with the mixed solvent is 0.8–1.2 mol / L. The UV photoinitiator is Irgacure 184, and the amount of UV photoinitiator added is 0.1% of the mass of the perovskite precursor. wt %~1.0 wt The crystallization regulator is MACl (methylammonium chloride), and the amount of crystallization regulator added is 1.5% of the mass of the perovskite precursor. wt % In step 7, the encapsulation protective liquid is epoxy resin or polyurethane.

[0006] In step 1, the preparation method of the flexible silicone substrate is as follows: first, according to the formula ratio, 86... wt %~93.5 wt % high transparency silicone rubber, 1 wt %~3 wt % crosslinking agent, 5 wt %~10 wt % plasticizer and 0.5 wt %~1 wt A certain percentage of coupling agent is added to a high-speed mixer and mixed for 30-60 minutes at a speed of 1000-1500 rpm and a temperature of 25-30°C to prepare a uniform silicone slurry. The silicone slurry is then fed into a twin-screw extruder, with the extrusion temperature controlled at 80-100°C and the screw speed at 50-100 rpm. The slurry is extruded through a flat die to form a continuous sheet or film. The thickness of the sheet or film is adjusted to 0.5-1 mm by adjusting the die gap. Finally, the extruded sheet or film is conveyed to a UV curing oven and cured at a wavelength of 365 nm and an intensity of 50 mW / cm². 2 Under certain conditions, it is cured for 5-8 seconds to form a transparent and flexible silicone substrate.

[0007] In step 1, the plasma cleaning power is 200 W, the gas used for plasma cleaning is a mixture of argon and oxygen with a volume ratio of 4:1, and the processing time is 10-20 seconds. Argon gas enables physical bombardment, removing oil and impurities from the surface of the flexible silicone substrate, while oxygen introduces polar groups such as hydroxyl and carboxyl groups, improving the wettability and adhesion of subsequent conductive pastes.

[0008] In step 3, the coating speed is 3~10 m / min, the gap between the first slit coating head at the first slit coating head station and the flexible silicone substrate is 50~200 μm, and the flow rate of the conductive paste is 5~15 mL / min.

[0009] In step 5, the coating speed is 3~10 m / min, the gap between the second slit coating head and the silicone flexible substrate is 50~200 μm, and the ambient temperature for coating is controlled at 25~35℃ and the relative humidity is not greater than 40% to avoid premature crystallization of the perovskite precursor solution.

[0010] In steps 4, 6, and 8, the UV curing wavelength is 365 nm, the UV curing intensity is 50 mW / cm², and the curing time is 3 to 10 seconds.

[0011] In step 4, the coating thickness of the polymer conductive layer is 0.1~1 μm, the sheet resistance is <80 Ω / sq, and the light transmittance is ≥85%.

[0012] In step 6, the coating thickness of the cured perovskite film layer is 100~500 nm, wherein the coating thickness = the thickness of the coated titanium dioxide precursor solution × the evaporation rate of the mixed solvent, and the evaporation rate of the mixed solvent is 70%~80%, thereby determining the thickness of the coated titanium dioxide precursor solution.

[0013] In step 7, the coating speed is 3~10 m / min, and in step 8, the coating thickness of the encapsulation protective layer is 1~5 μm.

[0014] If integrated electrodes are required, steps 7-9 are replaced as follows: Step 7: The flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station. A slit extrusion technique is used to coat the perovskite thin film layer of the flexible silicone substrate with a solid content of 10%-15%, and UV curing is performed simultaneously to form the electrode layer. Step 8: A 50 nm thick Al2O3 encapsulation layer is deposited using an atomic layer deposition (ALD) device at a deposition temperature of 80°C. The Al source is trimethylaluminum, and the oxygen source is water. The deposition thickness is 0.12 nm per cycle, and the cycle is 417 times. Step 9: Finally, a laser etching machine is used to cut the flexible silicone substrate into individual devices of 2cm×2cm to 10cm×10cm. The etching power is 20 W, the etching speed is 1-2 m / min, and the etching accuracy is ±0.1 mm, thereby avoiding damage to the internal functional layer.

[0015] By adopting the above technical solution, the method for preparing a flexible perovskite solar cell of the present invention has the following beneficial effects: From a technological perspective, 1. By selecting suitable perovskite raw materials, combining roll-to-roll process and slot extrusion technology, and using UV curing process, efficient and large-scale continuous production of perovskite flexible films was achieved, and efficient, transparent and flexible perovskite solar cells were prepared. 2. Using slot extrusion technology for coating allows for precise control of the film thickness and uniformity, thereby improving the photoelectric performance of solar cells; 3. The UV curing method allows for rapid and efficient coating curing, making it suitable for continuous large-scale production; In terms of performance, the fabricated flexible perovskite solar cells have the following characteristics: 1. High photoelectric conversion efficiency: Perovskite thin film layers have excellent photoelectric properties, with a PCE of 10%~15%; 2. Excellent mechanical properties: The combination of silicone substrate and polymer conductive layer provides good flexibility and bending resistance (bending radius ≤ 5 mm). 3. Good stability: The long-term stability of perovskite solar cells is improved through UV curing and encapsulation processes; In terms of applications, the flexible perovskite solar cells prepared can be used in: 1. Wearable devices, portable electronic devices, and other fields; 2. As transparent or semi-transparent photovoltaic modules, they are used in building applications such as smart windows and curtain walls; 3. Provide a continuous power supply for intelligent devices such as sensors and wireless communication devices. Detailed Implementation

[0016] To further explain the technical solution of the present invention, the present invention will be described in detail below through specific embodiments.

[0017] 1. Test materials High-transparency silicone rubber, crosslinking agent dicumyl peroxide, plasticizer dioctyl phthalate, coupling agent KH-550, high-molecular conductive material poly(3,4-ethylenedioxythiophene) (PEDOT) or polyaniline (PANI), organic solvents N , N -Dimethylformamide (DMF) Perovskite precursor (mainly composed of Cs) 0.1 (FA 0.83 MA 0.17 ) 0.9 Pb(I 0.83 Br 0.17 3) Dimethyl sulfoxide (DMSO), γ-butyrolactone (GBL), UV photoinitiator Irgacure 184, crystallization regulator MACl, epoxy resin, polyurethane, trimethylaluminum.

[0018] 2. Test equipment Plasma cleaner PT-2000, UV-365 ozone generator, slit coating head SL-500.

[0019] In this invention, the equipment and raw materials used are all well-known products in the field.

[0020] 3. Preparation of flexible silicone substrate Method 1: First, according to the formula ratio, add 86 wt % high transparency silicone rubber, 3 wt % crosslinking agent, 10 wt % plasticizer and 1 wt A coupling agent was added to a high-speed mixer and mixed for 30 minutes at 1000 r / min and 25 ℃ to prepare a uniform silicone slurry. The silicone slurry was then fed into a twin-screw extruder, with the extrusion temperature controlled at 80 ℃ and the screw speed at 50 r / min. The slurry was extruded through a flat die to form a continuous sheet. The sheet thickness was adjusted to 0.5 mm by adjusting the die gap. Finally, the extruded sheet was conveyed to a UV curing oven and cured at a wavelength of 365 nm and an intensity of 50 mW / cm². 2 Curing for 5 seconds under certain conditions forms a transparent and flexible silicone substrate.

[0021] Method 2: First, according to the formula ratio, add 93.5... wt % high transparency silicone rubber, 1 wt % crosslinking agent, 5 wt % plasticizer and 0.5 wt A coupling agent was added to a high-speed mixer and mixed for 60 minutes at 1500 r / min and 30 ℃ to prepare a uniform silicone slurry. The silicone slurry was then fed into a twin-screw extruder, with the extrusion temperature controlled at 100 ℃ and the screw speed at 100 r / min. A continuous film was formed by extrusion through a flat die, and the film thickness was adjusted to 1 mm by adjusting the die gap. Finally, the extruded sheet or film was conveyed to a UV curing oven and cured at a wavelength of 365 nm and an intensity of 50 mW / cm². 2 Curing for 8 seconds under the specified conditions forms a transparent and flexible silicone substrate.

[0022] The prepared flexible silicone substrate has a light transmittance of ≥90%, an elongation at break of ≥300%, and a bending fatigue life of ≥10,000 cycles (bending radius of 5 mm).

[0023] 4. Preparation of PEDOT:PSS / graphene composite electrode paste PEDOT:PSS / graphene composite electrode paste is a material known in the art and can be prepared by the following methods: First, graphene quantum dots and PSS (polystyrene sulfonic acid) were added to deionized water and sonicated at 300 Hz for 1 h, followed by stirring at 800 r / min for 1 h to obtain a uniformly dispersed first aqueous dispersion. Then, PEDOT (poly-3,4-ethylenedioxythiophene) was dissolved in deionized water to prepare a second aqueous dispersion, which was slowly injected into the first aqueous dispersion and stirred at 1200 r / min for 40 min to complete emulsification, forming a uniform mixed emulsion. Then, under a nitrogen atmosphere, sodium persulfate oxidant and ferric sulfate catalyst were added to the mixed emulsion in three portions (each 40 min apart), and the system temperature was controlled at 15~25℃. The reaction was carried out at a constant temperature for 24 h to achieve in-situ polymerization of PEDOT in the graphene / PSS system. Finally, the product was soaked in a mixture of activated 732 cation exchange resin and 717 anion exchange resin for 6 h, and impurity ions were removed by filtration to obtain a stable PEDOT:PSS / graphene composite electrode slurry. The raw material ratio is controlled as follows: the mass ratio of PSS to PEDOT is 2.5:1, the mass ratio of graphene quantum dots to PEDOT is 0.3:1, the molar ratio of sodium persulfate to PEDOT is 2:1, the molar ratio of ferric sulfate to PEDOT is 0.01:1, and the solid content of the system is 10% to 15%.

[0024] Example 1 A method for fabricating a flexible perovskite solar cell includes the following steps: Step 1: First, wind the self-made flexible silicone substrate onto the unwinding device and unwind it. Convey it at a speed of 5m / min to the plasma cleaner for plasma cleaning. The power of the plasma cleaning is 200W. The gas used for plasma cleaning is a mixture of argon and oxygen with a volume ratio of 4:1. The cleaning time is 15 seconds. Step 2: Then, the cleaned silicone flexible substrate is transported to the ultraviolet ozone device to treat the surface of the silicone flexible substrate with ultraviolet ozone for 8 seconds. Step 3: Then, the silicone flexible substrate treated with ultraviolet ozone is conveyed to the first slit coating head station. The conductive paste is uniformly coated on the silicone flexible substrate using slit extrusion technology. The coating speed is 5 m / min, the gap between the first slit coating head and the silicone flexible substrate is 100 μm, and the flow rate of the conductive paste is 5 mL / min. Step 4: Then, the flexible silicone substrate coated with conductive paste is conveyed to the first ultraviolet lamp device for UV curing. The curing time is 5 seconds, thereby forming a polymer conductive layer with a coating thickness of 0.5 μm on the surface of the flexible silicone substrate. The sheet resistance of the polymer conductive layer is 72 Ω / sq, and the light transmittance is 88%. Step 5: Then, the flexible silicone substrate with the polymer conductive layer formed on its surface is conveyed to the second slit coating head station. The perovskite precursor solution is uniformly coated on the polymer conductive layer of the flexible silicone substrate using slit extrusion technology. The coating speed is 5 m / min, the gap between the second slit coating head and the flexible silicone substrate is 100 μm, the coating environment temperature is 30℃, and the relative humidity is 30%. Step 6: Then, the silicone flexible substrate coated with the perovskite precursor solution is transported to the second ultraviolet lamp device for UV curing. The curing time is 5 seconds, thereby forming a perovskite thin film layer with a coating thickness of 300 nm on the surface of the polymer conductive layer. Step 7: Then, the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station. A 20% solid content encapsulation protective liquid is applied to the perovskite thin film layer of the flexible silicone substrate at a coating speed of 5 m / min. The gap between the second slit coating head and the flexible silicone substrate is 100 μm. Step 8: Then, the flexible silicone substrate coated with encapsulation protective liquid is transported to the third ultraviolet lamp curing device for UV curing. The curing time is 5 seconds, thereby forming an encapsulation protective layer with a coating thickness of 3 μm on the perovskite thin film layer, completing the encapsulation and obtaining a flexible perovskite solar cell. Step 9: Finally, wind the flexible perovskite solar cell onto the winding device with a winding tension of 8 N.

[0025] In steps 4, 6, and 8, the UV curing wavelength is 365 nm, and the UV curing intensity is 50 mW / cm². 2 .

[0026] Example 2 A method for fabricating a flexible perovskite solar cell includes the following steps: Step 1: First, wind the self-made flexible silicone substrate onto the unwinding device and unwind it. Convey it at a speed of 3 m / min to the plasma cleaner for plasma cleaning. The power of the plasma cleaning is 200 W. The gas used for plasma cleaning is a mixture of argon and oxygen with a volume ratio of 4:1. The cleaning time is 20 seconds. Step 2: Then, the cleaned silicone flexible substrate is transported to the ultraviolet ozone device to treat the surface of the silicone flexible substrate with ultraviolet ozone for 10 seconds. Step 3: Then, the silicone flexible substrate treated with ultraviolet ozone is conveyed to the first slit coating head station. The conductive paste is uniformly coated on the silicone flexible substrate using slit extrusion technology. The coating speed is 3 m / min, the gap between the first slit coating head and the silicone flexible substrate is 50 μm, and the flow rate of the conductive paste is 10 mL / min. Step 4: Then, the flexible silicone substrate coated with conductive paste is conveyed to the first ultraviolet lamp device for UV curing. The curing time is 10 seconds, thereby forming a polymer conductive layer with a coating thickness of 1 μm on the surface of the flexible silicone substrate. The sheet resistance of the polymer conductive layer is 78 Ω / sq, and the light transmittance is 85%. Step 5: Then, the flexible silicone substrate with the polymer conductive layer formed on its surface is conveyed to the second slit coating head station. The perovskite precursor solution is uniformly coated on the polymer conductive layer of the flexible silicone substrate using slit extrusion technology. The coating speed is 3 m / min, the gap between the second slit coating head and the flexible silicone substrate is 50 μm, the coating environment temperature is 35℃, and the relative humidity is 30%. Step 6: Then, the silicone flexible substrate coated with the perovskite precursor solution is transported to the second ultraviolet lamp device for UV curing. The curing time is 10 seconds, thereby forming a perovskite thin film layer with a coating thickness of 500 nm on the surface of the polymer conductive layer. Step 7: Then, the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station. The slit extrusion technology is used to coat the perovskite thin film layer of the flexible silicone substrate with a solid content of 15%. Simultaneously, UV curing is performed for 5 seconds to form an electrode layer with a sheet resistance of 45 Ω / sq. Step 8: Then, a 50 nm thick Al2O3 encapsulation layer is formed on the electrode layer of the silicone flexible substrate by ALD deposition at a deposition temperature of 80 °C. The Al source is trimethylaluminum and the oxygen source is water. The deposition thickness is 0.12 nm per cycle, and the cycle is 417 times. Step 9: Finally, use a laser etching machine to cut the flexible silicone substrate into individual devices of 5cm × 5cm. The etching power is 20 W, the etching speed is 1.5 m / min, and the etching accuracy is ±0.1 mm.

[0027] In steps 4 and 6, the UV curing wavelength is 365 nm, and the UV curing intensity is 50 mW / cm². 2 .

[0028] Example 3 A method for fabricating a flexible perovskite solar cell includes the following steps: Step 1: First, wind the self-made flexible silicone substrate onto the unwinding device and unwind it. The substrate is then conveyed at a speed of 10 m / min to a plasma cleaner for plasma cleaning. The power of the plasma cleaning is 200 W, and the gas used for plasma cleaning is a mixture of argon and oxygen with a volume ratio of 4:1. The cleaning time is 10 seconds. Step 2: Then, the cleaned silicone flexible substrate is transported to the ultraviolet ozone device to treat the surface of the silicone flexible substrate with ultraviolet ozone for 5 seconds. Step 3: Then, the silicone flexible substrate treated with ultraviolet ozone is conveyed to the first slit coating head station. The conductive paste is uniformly coated on the silicone flexible substrate using slit extrusion technology. The coating speed is 10 m / min, the gap between the first slit coating head and the silicone flexible substrate is 200 μm, and the flow rate of the conductive paste is 15 mL / min. Step 4: Then, the flexible silicone substrate coated with conductive paste is conveyed to the first ultraviolet lamp device for UV curing. The curing time is 3 seconds, thereby forming a polymer conductive layer with a coating thickness of 0.1 μm on the surface of the flexible silicone substrate. The sheet resistance of the polymer conductive layer is 75 Ω / sq, and the light transmittance is 89%. Step 5: Then, the flexible silicone substrate with the polymer conductive layer formed on its surface is conveyed to the second slit coating head station. The perovskite precursor solution is uniformly coated on the polymer conductive layer of the flexible silicone substrate using slit extrusion technology. The coating speed is 10 m / min, the gap between the second slit coating head and the flexible silicone substrate is 200 μm, the coating environment temperature is 25℃, and the relative humidity is 40%. Step 6: Then, the silicone flexible substrate coated with the perovskite precursor solution is transported to the second ultraviolet lamp device for UV curing. The curing time is 3 seconds, thereby forming a perovskite thin film layer with a coating thickness of 100 nm on the surface of the polymer conductive layer. Step 7: Then, the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station. An encapsulation protective liquid with a solid content of 18% is coated on the perovskite thin film layer of the flexible silicone substrate at a coating speed of 10 m / min. The gap between the second slit coating head and the flexible silicone substrate is 200 μm. Step 8: Then, the flexible silicone substrate coated with encapsulation protective liquid is transported to the third UV lamp curing device for UV curing. The curing time is 3 seconds, thereby forming an encapsulation protective layer with a coating thickness of 1 μm on the perovskite thin film layer, completing the encapsulation and obtaining a flexible perovskite solar cell. Step 9: Finally, wind the flexible perovskite solar cell onto the winding device with a winding tension of 3 N.

[0029] In steps 4, 6, and 8, the UV curing wavelength is 365 nm and the UV curing intensity is 50 mW / cm².

[0030] The compositions of the conductive paste, perovskite precursor solution, and encapsulation protective liquid in the above embodiments are shown in Table 1.

[0031] Table 1 Composition of raw materials in each embodiment

[0032] Table 2 shows the photoelectric conversion performance output parameters of the flexible perovskite solar cells under three embodiments. The experimental results show that the flexible perovskite solar cell prepared in Example 1 has a photoelectric conversion efficiency (PCE) of 15%, the smallest bending radius (2 mm), and an efficiency decay of only 4.2% after 10,000 cycles, and has the best overall performance.

[0033] Table 2 Photovoltaic conversion performance of flexible perovskite solar cells

[0034] The above embodiments are not intended to limit the product form and style of the present invention. Any appropriate changes or modifications made by those skilled in the art should be considered as not departing from the patent scope of the present invention.

Claims

1. A method for fabricating a flexible perovskite solar cell, characterized in that: Includes the following steps: Step 1: First, wind the flexible silicone substrate onto the unwinding device and unwind it. Then, convey it to the plasma cleaner at a speed of 3~10 m / min for plasma cleaning. Step 2: Then, the cleaned silicone flexible substrate is transported to an ultraviolet ozone device to treat the surface of the silicone flexible substrate with ultraviolet ozone, thereby reducing the surface contact angle of the silicone flexible substrate. Step 3: Then, the silicone flexible substrate treated with ultraviolet ozone is conveyed to the first slit coating head station, and the conductive paste is uniformly coated on the silicone flexible substrate using slit extrusion technology. Step 4: Then, the silicone flexible substrate coated with conductive paste is transported to the first ultraviolet lamp device for UV curing, thereby forming a polymer conductive layer on the surface of the silicone flexible substrate. Step 5: Then, the silicone flexible substrate with the polymer conductive layer formed on its surface is transported to the second slit coating head station, and the perovskite precursor solution is uniformly coated on the polymer conductive layer of the silicone flexible substrate using slit extrusion technology. Step 6: Then, the silicone flexible substrate coated with the perovskite precursor solution is transported to the second ultraviolet lamp device for UV curing, thereby forming a perovskite thin film layer on the surface of the polymer conductive layer. Step 7: Then, the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer formed on its surface is transported to the third slit coating head station, and the encapsulation protective liquid is coated on the perovskite thin film layer of the flexible silicone substrate using slit extrusion technology. Step 8: Then, the flexible silicone substrate coated with encapsulation protective liquid is transported to the third ultraviolet lamp curing device for UV curing, thereby forming an encapsulation protective layer on the perovskite thin film layer, completing the encapsulation, and obtaining the flexible perovskite solar cell. Step 9: Finally, the flexible perovskite solar cell is wound up onto the winding device; In step 3, the conductive paste includes a polymer conductive material and an organic solvent. The polymer conductive material is PEDOT or PANI, and the organic solvent is DMF. The ratio of the polymer conductive material to the organic solvent is 1~5:

15. In step 6, the perovskite precursor solution comprises a perovskite precursor, a mixed solvent, a UV photoinitiator, and a crystallization regulator. The mixed solvent is composed of DMSO and GBL mixed at a volume ratio of 7:

3. The concentration of the perovskite precursor after mixing with the mixed solvent is 0.8–1.2 mol / L. The UV photoinitiator is Irgacure 184, and the amount of UV photoinitiator added is 0.1% of the mass of the perovskite precursor. wt %~1.0 wt The crystallization regulator is MACl, and the amount of crystallization regulator added is 1.5% of the mass of the perovskite precursor. wt % In step 7, the encapsulation protective liquid is epoxy resin or polyurethane.

2. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 1, the preparation method of the flexible silicone substrate is as follows: first, according to the formula ratio, 86... wt %~93.5 wt % high transparency silicone rubber, 1 wt %~3 wt % crosslinking agent, 5 wt %~10 wt % plasticizer and 0.5 wt %~1 wt A certain percentage of coupling agent is added to a high-speed mixer and mixed for 30-60 minutes at a speed of 1000-1500 rpm and a temperature of 25-30°C to prepare a uniform silicone slurry. The silicone slurry is then added to a twin-screw extruder, with the extrusion temperature controlled at 80-100°C and the screw speed at 50-100 rpm. Continuous sheets or films are formed through a flat die, and the thickness of the sheets or films is adjusted to 0.5-1 mm by adjusting the die gap. Finally, the extruded sheets or films are conveyed to a UV curing oven and cured at a wavelength of 365 nm and an intensity of 50 mW / cm². 2 Under certain conditions, it is cured for 5-8 seconds to form a transparent and flexible silicone substrate.

3. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 1, the power of the plasma cleaning is 200 W, the gas used for plasma cleaning is a mixture of argon and oxygen with a volume ratio of 4:1, and the processing time of the plasma cleaning is 10~20 seconds.

4. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 3, the coating speed is 3~10 m / min, the gap between the first slit coating head at the first slit coating head station and the silicone flexible substrate is 50~200 μm, and the flow rate of the conductive paste is 5~15 mL / min.

5. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 5, the coating speed is 3~10 m / min, the gap between the second slit coating head and the silicone flexible substrate is 50~200 μm, and the ambient temperature for coating is controlled at 25~35℃ and the relative humidity is not greater than 40%.

6. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In steps 4, 6, and 8, the UV curing wavelength is 365 nm, the UV curing intensity is 50 mW / cm², and the curing time is 3 to 10 seconds.

7. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 4, the coating thickness of the polymer conductive layer is 0.1~1 μm, the sheet resistance is <80 Ω / sq, and the light transmittance is ≥85%.

8. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 6, the coating thickness of the cured perovskite film layer is 100~500 nm.

9. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: In step 7, the coating speed is 3~10 m / min, and in step 8, the coating thickness of the encapsulation protective layer is 1~5 μm.

10. The method for fabricating a flexible perovskite solar cell according to claim 1, characterized in that: Replace steps 7-9 as follows: Step 7: Then, transport the flexible silicone substrate with a perovskite thin film layer and a polymer conductive layer on its surface to the third slit coating head station. Use slit extrusion technology to coat the perovskite thin film layer of the flexible silicone substrate with a solid content of 10%~15%, and simultaneously UV cure to form the electrode layer; Step 8: Then, deposit a 50 nm thick Al2O3 encapsulation layer using an ALD device at a deposition temperature of 80℃. The Al source is trimethylaluminum, and the oxygen source is water. The deposition thickness is 0.12 nm per cycle, and the cycle is 417 times; Step 9: Finally, use a laser etching machine to cut the flexible silicone substrate into individual devices of 2cm×2cm ~ 10cm×10cm. The etching power is 20 W, the etching speed is 1~2 m / min, and the etching accuracy is ±0.1 mm.

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