Battery assembly and method of manufacture, solar cell

Abstract

The application provides a battery assembly and a preparation method thereof and a solar cell. The battery assembly comprises a substrate and a battery unit. The battery unit comprises a first electrode layer, a functional layer and a second electrode layer. The functional layer comprises a first transport layer, a perovskite light absorption layer and a second transport layer which are sequentially stacked in a direction away from the substrate. The perovskite light absorption layer comprises a compound formed by a perovskite material and a non-fullerene acceptor material. The perovskite material contains lead elements. By arranging the compound formed by the perovskite material and the non-fullerene acceptor material in the perovskite light absorption layer, the non-fullerene acceptor material can be combined with lead ions in the perovskite light absorption layer in the formation process of the compound, so that defects in the perovskite light absorption layer are reduced, the resistance between the perovskite light absorption layer and the electron transport layer and the resistance between the perovskite light absorption layer and the hole transport layer are reduced, the carrier recombination loss is reduced, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] This application relates to the field of solar energy technology, specifically to a battery module and its preparation method, and a solar cell. Background Technology

[0002] Perovskite solar cells (PSCs) are promising next-generation optoelectronic materials due to their advantages such as excellent optical absorption, long equilibrium carrier diffusion length, and low cost.

[0003] In related technologies, perovskite solar cells include a transparent conductive substrate, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode. However, in these technologies, the perovskite light-absorbing layer contains many defects, resulting in significant resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer. This significant resistance leads to carrier recombination losses, reducing the photoelectric conversion efficiency of the perovskite solar cell. Summary of the Invention

[0004] To address the aforementioned issues, this application provides a battery module and its fabrication method, as well as a solar cell.

[0005] In a first aspect, embodiments of this application provide a battery assembly, comprising: a substrate and a plurality of battery cells, wherein the plurality of battery cells are located on one side of the substrate; along a direction perpendicular to the substrate, each battery cell includes a first electrode layer, a functional layer, and a second electrode layer sequentially stacked; the functional layer includes a first transport layer, a perovskite light-absorbing layer, and a second transport layer sequentially stacked along a direction away from the substrate; wherein the perovskite light-absorbing layer comprises a compound formed of perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead; a first groove is formed between the first electrode layers of two adjacent battery cells, the first transport layer fills the first groove, a second groove is formed between the second electrode layers of two adjacent battery cells, and a third groove is formed between the functional layers of two adjacent battery cells, the second electrode layer fills the third groove and is electrically connected to the first electrode layer of the adjacent battery cell.

[0006] In conjunction with the first aspect, non-fullerene acceptor materials include IT-M, whose structural formula is Formula I:

[0007]

[0008] Preferably, the molar ratio of IT-M to perovskite material is in the range of 0 to 1.0; preferably, the molar ratio of IT-M to perovskite material is 0.5.

[0009] In conjunction with the first aspect, non-fullerene acceptor materials include IT-4F, whose structural formula is Formula II:

[0010]

[0011] Preferably, the molar ratio of IT-4F to perovskite material is in the range of 0 to 1.0; preferably, the molar ratio of IT-4F to perovskite material is 0.5.

[0012] In conjunction with the first aspect, perovskite materials include lead methylammonium iodide.

[0013] In conjunction with the first aspect, the first transport layer includes a hole transport layer, and the second transport layer includes an electron transport layer; preferably, the material of the first transport layer includes at least one of 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-difluorene, cuprous iodide, cuprous thiocyanate, copper oxide, cuprous oxide, nickel oxide, copper aluminate, vanadium pentoxide, cadmium sulfide, cadmium selenide, or poly(3,4-ethylenedioxythiophene):poly(p-styrene sulfonate); and / or, the material of the second transport layer includes at least one of 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-spirodifluorene, cuprous iodide, cuprous thiocyanate, copper oxide, cuprous oxide, nickel oxide, copper aluminate, vanadium pentoxide, cadmium sulfide, cadmium selenide, or poly(3,4-ethylenedioxythiophene):poly(p-styrene sulfonate); and / or, the material of the second transport layer includes at least one of 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 2,2',7,7'-tetrakis[N,N-di(4-methylphenyl)aniline], 2, The transport layer material includes at least one of [6,6]-phenyl-C61-butyrate, titanium dioxide, zinc oxide, tungsten trioxide, tin dioxide, zinc stannate, fullerene, or fullerene derivatives; preferably, the functional layer further includes a hole blocking layer located on the side of the second transport layer opposite to the substrate; preferably, the hole blocking layer material includes 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline; preferably, the first electrode layer includes a transparent electrode layer; and / or, the second electrode layer includes a transparent electrode layer or a non-transparent electrode layer; preferably, the orthogonal projection of the third groove on the substrate is located between the orthogonal projection of the first groove on the substrate and the orthogonal projection of the second groove on the substrate.

[0014] Secondly, embodiments of this application provide a method for fabricating a battery module, comprising: fabricating a first electrode layer on a substrate and performing a first laser etching on the first electrode layer to form a first groove; fabricating a functional layer on the side of the first electrode layer away from the substrate and performing a second laser etching on the functional layer to form a third groove, wherein the functional layer includes a first transport layer, a perovskite light-absorbing layer and a second transport layer sequentially stacked along a direction away from the substrate, wherein the perovskite light-absorbing layer comprises a compound formed of perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead; fabricating a second electrode layer on the side of the functional layer away from the substrate and performing a third laser etching on the second electrode layer to form a second groove.

[0015] In conjunction with the second aspect, a functional layer is fabricated on the side of the first electrode layer away from the substrate, including: fabricating a first transport layer on the side of the first electrode layer away from the substrate; fabricating a perovskite light-absorbing layer on the side of the first transport layer away from the substrate; and fabricating a second transport layer on the side of the perovskite light-absorbing layer away from the substrate.

[0016] In conjunction with the second aspect, a perovskite light-absorbing layer is prepared on the side of the first transport layer away from the substrate, comprising: dissolving a perovskite precursor in a first solvent, adding a non-fullerene acceptor material to the first solvent, and mixing uniformly to obtain a first solution; spin-coating the first solution onto the side of the first transport layer away from the substrate, and adding a second solvent as an antisolvent, followed by annealing to obtain the perovskite light-absorbing layer; preferably, the perovskite precursor includes lead iodide and methylammonium iodide; and / or, the non-fullerene acceptor material includes IT-M or IT-4F; preferably, the first solvent includes at least one of N,N-dimethylformamide and N-methylpyrrolidone; and / or, the second solvent includes chlorobenzene or toluene; preferably, the annealing temperature is greater than or equal to 70°C and less than or equal to 150°C.

[0017] In conjunction with the second aspect, the preparation of a first electrode layer on a substrate includes: preparing the first electrode layer on the substrate by magnetron sputtering or vapor deposition; preferably, the preparation of a second electrode layer on the side of the functional layer away from the substrate includes: preparing the second electrode layer on the side of the functional layer away from the substrate by vapor deposition; preferably, the preparation of a first transport layer on the side of the first electrode layer away from the substrate includes: spin-coating the material of the first transport layer on the side of the first electrode layer away from the substrate, followed by annealing to obtain the first transport layer; preferably, the preparation of a second transport layer on the side of the perovskite light-absorbing layer away from the substrate includes: spin-coating the material of the second transport layer on the side of the perovskite light-absorbing layer away from the substrate, followed by annealing to obtain the second transport layer; preferably, after preparing the second transport layer, the preparation method further includes: spin-coating the material of a hole-blocking layer on the side of the second transport layer away from the substrate, followed by annealing to obtain the hole-blocking layer.

[0018] Thirdly, embodiments of this application provide a solar cell, including any of the aforementioned battery modules, or including a battery module prepared by any of the aforementioned preparation methods.

[0019] This application provides a battery module and its fabrication method, and a solar cell. The battery module includes: a substrate and multiple battery cells, with the multiple battery cells located on one side of the substrate; along a direction perpendicular to the substrate, each battery cell includes a first electrode layer, a functional layer, and a second electrode layer stacked sequentially; the functional layer includes a first transport layer, a perovskite light-absorbing layer, and a second transport layer stacked sequentially along a direction away from the substrate; wherein, the perovskite light-absorbing layer comprises a compound formed from perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead; a first groove is formed between the first electrode layers of two adjacent battery cells, and the first transport layer fills the first groove; a second groove is formed between the second electrode layers of two adjacent battery cells; a third groove is formed between the functional layers of two adjacent battery cells, and the second electrode layer fills the third groove and is electrically connected to the first electrode layer of the adjacent battery cell. Lead ions are generated during annealing of perovskite materials. By setting a compound formed by perovskite materials and non-fullerene acceptor materials in the perovskite light-absorbing layer, the non-fullerene acceptor materials can combine with lead ions in the perovskite light-absorbing layer during the formation process, reducing defects in the perovskite light-absorbing layer. This reduces the resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer, thereby reducing carrier recombination losses and improving the photoelectric conversion efficiency of perovskite solar cells. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a battery assembly provided in an embodiment of this application.

[0021] Figure 2 This is a schematic diagram of the specific structure of a battery cell provided in another embodiment of this application.

[0022] Figure 3 The crystal structure diagram of undoped IT-M or IT-4F lead methylammonium iodide is provided for an embodiment of this application.

[0023] Figure 4 The crystal structure diagram of methylammonium lead iodide doped with IT-M or IT-4F provided in an embodiment of this application.

[0024] Figure 5 The current density (J)-voltage (V) curves are for comparative examples, Example 2, and Example 6.

[0025] Figure 6 (a) Scanning electron microscope image of the surface of the perovskite crystal structure generated in the comparative example; Figure 6 (b) is a scanning electron microscope image of a cross section of the perovskite crystal structure generated in the comparative example; Figure 6 (c) is a scanning electron microscope image of the surface of the perovskite crystal structure generated in Example 2; Figure 6(d) is a scanning electron microscope image of a cross section of the perovskite crystal structure generated in Example 2; Figure 6 (e) is a scanning electron microscope image of the surface of the perovskite crystal structure generated in Example 6; Figure 6 (f) is a scanning electron microscope image of a cross section of the perovskite crystal structure generated in Example 6.

[0026] Figure 7 (a) is the contact angle between the perovskite light-absorbing layer prepared in the comparative example and water; Figure 7 (b) is the contact angle between the perovskite light-absorbing layer prepared in Example 2 and water; Figure 7 (c) is the contact angle between the perovskite light-absorbing layer prepared in Example 6 and water.

[0027] Figure 8 The lifetime curves are for the perovskite solar cells prepared in the comparative examples, Example 2, and Example 6.

[0028] Figure 9 This is a schematic flowchart illustrating a method for preparing a battery module according to an embodiment of this application.

[0029] Figure 10 This is a schematic flowchart illustrating a method for preparing a battery module according to another embodiment of this application.

[0030] Figure 11 This is a schematic flowchart illustrating a method for preparing a perovskite light-absorbing layer according to another embodiment of this application.

[0031] Figure 12 This is a schematic flowchart illustrating a method for preparing a battery module according to another embodiment of this application.

[0032] Figure 13 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application.

[0033] Figure label:

[0034] 100 Battery module; 110 Substrate; 120 Battery cell; 121 First electrode layer; 122 Functional layer; 1221 First transport layer; 1222 Perovskite light absorption layer; 1223 Second transport layer; 1224 Hole blocking layer; 123 Second electrode layer; 130 First groove; 140 Second groove; 150 Third groove; 1100 Solar cell. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] In related technologies, perovskite solar cells include a transparent conductive substrate, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode. However, in these technologies, the perovskite light-absorbing layer contains many defects, resulting in significant resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer. This significant resistance leads to carrier recombination losses, reducing the photoelectric conversion efficiency of the perovskite solar cell.

[0037] Figure 1 This is a schematic diagram of the structure of a battery assembly provided in one embodiment of this application. Figure 1 As shown, this application provides a battery assembly 100, which includes a substrate 110 and a plurality of battery cells 120, wherein the plurality of battery cells 120 are located on one side of the substrate 110; along a direction perpendicular to the substrate 110, the battery cell 120 includes a first electrode layer 121, a functional layer 122 and a second electrode layer 123 stacked sequentially.

[0038] The functional layer 122 includes a first transport layer 1221, a perovskite light absorption layer 1222, and a second transport layer 1223, which are sequentially stacked along a direction away from the substrate 110; wherein the perovskite light absorption layer 1222 includes a compound formed of perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead.

[0039] A first groove 130 is provided between the first electrode layers 121 of two adjacent battery cells 120, and a first transmission layer 1221 is filled in the first groove 130. A second groove 140 is provided between the second electrode layers 123 of two adjacent battery cells 120, and a third groove 150 is provided between the functional layers 122 of two adjacent battery cells 120. The second electrode layer 123 is filled in the third groove 150 and is electrically connected to the first electrode layer 121 of the adjacent battery cell 120.

[0040] The first groove 130 is used to separate the first electrode layers 121 of two adjacent battery cells 120, preventing short circuits between the first electrode layers 121 of two adjacent battery cells 120, and providing an isolation basis for the series connection of multiple battery cells 120. The third groove 150 brings the second electrode layer 123 into contact with the exposed first electrode layer 121, thereby enabling two adjacent battery cells 120 to form a series connection. The second groove 140 is used to separate the second electrode layers 123 of two adjacent battery cells 120, preventing short circuits between the second electrode layers 123 of two adjacent battery cells 120, and ensuring that current can only be transmitted through the second electrode located in the third groove 150.

[0041] In this embodiment, lead ions are generated from lead in the perovskite material during annealing. By setting a compound formed from the perovskite material and a non-fullerene acceptor material in the perovskite light absorption layer 1222, the non-fullerene acceptor material can combine with the lead ions in the perovskite light absorption layer 1222 during the formation of the compound, reducing defects in the perovskite light absorption layer 1222. This reduces the resistance between the perovskite light absorption layer 1222 and the electron transport layer, and between the perovskite light absorption layer 1222 and the hole transport layer, thereby reducing carrier recombination loss and improving the photoelectric conversion efficiency of the perovskite solar cell.

[0042] Understandably, the orthographic projection of the third groove 150 on the substrate 110 lies between the orthographic projection of the first groove 130 on the substrate 110 and the orthographic projection of the second groove 140 on the substrate 110.

[0043] Optionally, the first electrode layer 121 includes a transparent electrode layer; and / or, the second electrode layer 123 includes a transparent electrode layer or a non-transparent electrode layer.

[0044] Optionally, the first transport layer 1221 includes a hole transport layer, and the second transport layer 1223 includes an electron transport layer.

[0045] Specifically, the material of the first transport layer 1221 includes at least one of 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,2',7,7'-tetra(di-p-tolylamino)spiro-9,9'-difluorene, cuprous iodide, cuprous thiocyanate, copper oxide, cuprous oxide, nickel oxide, copper aluminate, vanadium pentoxide, cadmium sulfide, cadmium selenide, or poly(3,4-ethylenedioxythiophene):poly(p-styrene sulfonate); and / or, the material of the second transport layer 1223 includes at least one of [6,6]-phenyl-C61-butyrate, titanium dioxide, zinc oxide, tungsten trioxide, tin dioxide, zinc stannate, fullerene, or fullerene derivatives.

[0046] Figure 2This is a schematic diagram illustrating the specific structure of a battery cell provided in another embodiment of this application. For example... Figure 2 As shown, in some embodiments, along a direction perpendicular to the substrate, the battery cell 120 includes a first electrode layer 121, a first transport layer 1221, a perovskite light-absorbing layer 1222, a second transport layer 1223, a hole-blocking layer 1224, and a second electrode layer 123, which are sequentially stacked. The hole-blocking layer 1224 is made of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.

[0047] In some embodiments, the perovskite material includes lead methylammonium iodide (MAPbI3).

[0048] In some embodiments, the non-fullerene acceptor material includes IT-M, the structural formula of which is Formula I:

[0049]

[0050] Optionally, the molar ratio of IT-M to perovskite material ranges from 0 to 1.0; for example, the molar ratio of IT-M to perovskite material can be any one of 0, 0.3, 0.5, 0.7, and 1.0.

[0051] Preferably, the molar ratio of IT-M to perovskite material is 0.5.

[0052] In some embodiments, the non-fullerene acceptor material includes IT-4F, which has the structural formula of Formula II:

[0053]

[0054] Optionally, the molar ratio of IT-4F to perovskite material ranges from 0 to 1.0; for example, the molar ratio of IT-4F to perovskite material can be any one of 0, 0.3, 0.5, 0.7, and 1.0.

[0055] Preferably, the molar ratio of IT-4F to perovskite material is 0.5.

[0056] Figure 3 The crystal structure diagram of undoped IT-M or IT-4F lead methylammonium iodide is provided for an embodiment of this application. Figure 4 A crystal structure diagram of methylammonium lead iodide doped with IT-M or IT-4F provided in an embodiment of this application. Figure 3 and Figure 4 As shown, the crystal structure of undoped non-fullerene acceptor materials IT-M or IT-4F in methylammonium lead iodide readily loses some iodide ions (I₂O₃) under high temperature conditions. -This creates vacancy defects; in the crystal structure of methylammonium lead iodide doped with non-fullerene acceptor materials IT-M or IT-4F, IT-M or IT-4F is located on the aforementioned vacancy.

[0057] Because methylammonium iodide (MAI) is volatile, when methylammonium lead iodide (MAPbI3) is thermally annealed at a relatively high temperature above 80°C, the MAI volatilizes, resulting in a lack of iodide ions (I₂O₃) in the crystal structure of MAPbI3. - Insufficient coordination of lead atoms (Pb) creates vacancies, which in turn leads to the formation of a positive charge on the atom, resulting in the presence of an undercoordinated lead ion (Pb). 2+ This leads to numerous defects in the perovskite light-absorbing layer, reducing the stability of the battery module and consequently decreasing its photoelectric conversion efficiency. The small molecules IT-M and IT-4F in this application possess a planar fused-ring core with strong electron-donating capabilities, flanked by two strong electron-accepting end groups (e.g., methyl, F, etc.). IT-M and IT-4F interact with undercoordinated lead ions (Pb... 2+ The Lewis acid-base reaction occurs, reducing defects in the perovskite light-absorbing layer, increasing the stability of the battery module, and improving its photoelectric conversion efficiency. Simultaneously, the two sides form two strong electron-accepting end groups, promoting carrier transport. Furthermore, doping with IT-M or IT-4F increases the grain size of methylammonium lead iodide (MAPbI3), reduces the grain surface area ratio, decreases grain activity, and improves reaction controllability.

[0058] The foregoing technical solution will be further explained below through more specific embodiments.

[0059] This document provides a method for preparing a perovskite solar cell, specifically comprising: pretreating a glass with a first electrode layer, such as ITO glass, and placing the pretreated ITO glass in a glove box filled with high-purity nitrogen. A first transport layer, such as 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), is spin-coated onto the ITO, and then a perovskite light-absorbing layer is prepared on the TAPC. Specifically, 580 mg of lead iodide (PbI3) is dissolved in 0.4 ml of N-methylpyrrolidone (NMP) solvent to form a sub-solution 1, and 200 mg of methylammonium iodide (MAI) is dissolved in 0.6 ml of N,N-dimethylformamide (DMF) solvent to form a sub-solution 2. The sub-solution 1 and sub-solution 2 are mixed, and 0.5 mg of IT-M or IT-4F is added to 1 ml of the mixture. The mixture is then magnetically stirred at 70°C for 12 h to form a first solution. 30 μL of the first solution was dropped onto the TAPC and rotated at 1000 rpm and 4000 rpm for 8 s and 11 s, respectively. At 8.5 s in the second stage, 60 μL of toluene was rapidly dropped onto the surface. After spin coating, the MAPbI3·NMP film was allowed to stand at room temperature for 15 min, then annealed at 90 °C for 10 min on a heating stage to form a perovskite light-absorbing layer. A second transport layer, such as methyl [6,6]-phenyl-C61-butyrate (PCBM), was then prepared on the perovskite light-absorbing layer, followed by the deposition of a second electrode layer under vacuum.

[0060] It should be noted that the quality of the perovskite material in the perovskite light-absorbing layer is related to the thickness or size of the perovskite light-absorbing layer. In the following examples, the presence of 1 mol of methylammonium lead iodide (MAPbI3) in the perovskite light-absorbing layer is used as an example. The following examples mainly analyze the effect of the molar ratio of IT-M / IT-4F to MAPbI3 (i.e., the doping amount of IT-M / IT-4F) on the performance of the perovskite solar cell.

[0061] Example 1

[0062] 0.3 mol of IT-M was doped into 1 mol of methylammonium lead iodide (MAPbI3), that is, the molar ratio of IT-M to perovskite material was 0.3 (1 mol MAPbI3 : 0.3 mol IT-M).

[0063] Example 2

[0064] 0.5 mol of IT-M was doped into 1 mol of methylammonium lead iodide (MAPbI3), that is, the molar ratio of IT-M to perovskite material was 0.5 (1 mol MAPbI3 : 0.5 mol IT-M).

[0065] Example 3

[0066] 0.7 mol of IT-M was doped into 1 mol of methylammonium lead iodide (MAPbI3), that is, the molar ratio of IT-M to perovskite material was 0.7 (1 mol MAPbI3 : 0.7 mol IT-M).

[0067] Example 4

[0068] 1 mol of methylammonium lead iodide (MAPbI3) is doped with 1.0 mol of IT-M, meaning the molar ratio of IT-M to perovskite material is 1.0 (1 mol MAPbI3 : 1.0 mol IT-M).

[0069] Example 5

[0070] 0.3 mol of IT-4F was doped into 1 mol of methylammonium lead iodide (MAPbI3), meaning the molar ratio of IT-4F to perovskite material was 0.3. (1 mol (MAPbI3 : 0.3 mol IT-4F)

[0071] Example 6

[0072] 0.5 mol of IT-4F was doped into 1 mol of methylammonium lead iodide (MAPbI3), meaning the molar ratio of IT-4F to perovskite material was 0.5 (1 mol MAPbI3 : 0.5 mol IT-4F).

[0073] Example 7

[0074] 0.7 mol of IT-4F was doped into 1 mol of methylammonium lead iodide (MAPbI3), meaning the molar ratio of IT-4F to perovskite material was 0.7 (1 mol MAPbI3 : 0.7 mol IT-4F).

[0075] Example 8

[0076] 1 mol of methylammonium lead iodide (MAPbI3) is doped with 1.0 mol of IT-4F, meaning the molar ratio of IT-4F to perovskite material is 1.0 (1 mol MAPbI3 : 1.0 mol IT-4F).

[0077] Comparative Example

[0078] Lead methylammonium iodide is undoped with IT-M or IT-4F. (MAPbI3)

[0079] Current density (J) and voltage (V) were tested for Examples 1 to 8 and the comparative example, respectively, and the power conversion efficiency (PCE) was calculated based on the current density and voltage.

[0080] Figure 5 The current density (J)-voltage (V) curves are shown for comparative examples, Example 2, and Example 6. Figure 5 As shown, under the same voltage, the current density of Examples 2 and 6 is greater than that of the comparative example. The photoelectric conversion efficiency can be calculated using current density and voltage; specifically, the photoelectric conversion efficiency is calculated according to the following formula.

[0081]

[0082] Where J is the current density, measured in milliamperes per square centimeter (mA / cm²). 2 V represents voltage, measured in volts (V), and Pin represents the standard incident light power, with a value of 100 mW / cm². 2 .

[0083] The photoelectric conversion efficiency of Examples 1 to 8 and the comparative examples is shown in Table 1.

[0084] Table 1

[0085] serial number PCE Comparative Example 16.65％ Example 1 18.70％ Example 2 19.59％ Example 3 19.30％ Example 4 18.50％ Example 5 18.91％ Example 6 19.75％ Example 7 19.10％ Example 8 18.60％

[0086] The photoelectric conversion efficiencies of Examples 1 to 8 are all higher than those of the comparative examples, indicating that doping IT-M or IT-4F in methylammonium lead iodide (MAPbI3) can effectively improve the photoelectric conversion efficiency of the perovskite light-absorbing layer. When the non-fullerene acceptor material is IT-M, among the multiple examples (Examples 1 to 4) in which IT-M is doped in methylammonium lead iodide, Example 2 has the highest photoelectric conversion efficiency of 19.59%. That is, the example with a molar ratio of methylammonium lead iodide (MAPbI3) to IT-M of 0.5 (1 mol MAPbI3: 0.5 mol IT-M) has the highest photoelectric conversion efficiency. In other words, this application does not limit the thickness of the perovskite light-absorbing layer; the highest photoelectric conversion efficiency is achieved when the molar ratio of methylammonium lead iodide (MAPbI3) to IT-M is 0.5. When the non-fullerene acceptor material is IT-4F, among the multiple examples (Examples 5 to 8) of IT-4F doped in methylammonium lead iodide, Example 6 has the highest photoelectric conversion efficiency of 19.75%. That is, the example with a molar ratio of methylammonium lead iodide (MAPbI3) to IT-4F of 0.5 (1 mol MAPbI3: 0.5 mol IT-4F) has the highest photoelectric conversion efficiency. In other words, this application does not limit the thickness of the perovskite light-absorbing layer. When the molar ratio of methylammonium lead iodide (MAPbI3) to IT-4F is 0.5, the photoelectric conversion efficiency is the highest.

[0087] Other performance tests were conducted on the comparative example, Example 2, and Example 6.

[0088] Figure 6(a) Scanning electron microscope image of the surface of the perovskite crystal structure generated in the comparative example; Figure 6 (b) is a scanning electron microscope image of a cross section of the perovskite crystal structure generated in the comparative example; Figure 6 (c) is a scanning electron microscope image of the surface of the perovskite crystal structure generated in Example 2; Figure 6 (d) is a scanning electron microscope image of a cross section of the perovskite crystal structure generated in Example 2; Figure 6 (e) is a scanning electron microscope image of the surface of the perovskite crystal structure generated in Example 6; Figure 6 (f) is a scanning electron microscope (SEM) image of a cross-section of the perovskite crystal structure generated in Example 6. For example... Figure 6 (a) and Figure 6 (b) It can be seen that the grain size of the comparative example (MAPbI3) is approximately 310 nm to 510 nm, with some grains having sizes of 310 nm, 410 nm, and 510 nm; for example... Figure 6 (c) and Figure 6 (d) It can be seen that the grain size of Example 2 (1 mol MAPbI3: 0.5 mol IT-M) is approximately 777 nm to 977 nm, with some grains having sizes of 777 nm, 877 nm, and 977 nm; Figure 6 (c) and Figure 6 (d) It can be seen that the grain size of Example 6 (1 mol MAPbI3: 0.5 mol IT-4F) is approximately 786 nm to 986 nm, with some grains having sizes of 786 nm, 886 nm, and 986 nm. That is, compared to the comparative example, the grain size of methylammonium lead iodide doped with IT-M or IT-F is larger.

[0089] It is worth noting that Figure 6 In (a), the white bright spot is the precipitated lead ions (Pb). 2+ ), Figure 6 (c) and Figure 6 (e) No bright spots were observed, meaning that lead ions (Pb) were not present in Examples 2 and 6. 2+ Precipitation, namely, doping IT-M or IT-4F into methylammonium lead iodide (MAPbI3) can passivate defects in methylammonium lead iodide, thereby reducing defects in the perovskite light absorption layer, increasing the stability of the battery module and improving the photoelectric conversion efficiency of the battery module.

[0090] Figure 7 (a) is the contact angle between the perovskite light-absorbing layer prepared in the comparative example and water; Figure 7 (b) is the contact angle between the perovskite light-absorbing layer prepared in Example 2 and water; Figure 7 (c) is the contact angle between the perovskite light-absorbing layer prepared in Example 6 and water. Figure 7(a) It can be seen that the angle between the perovskite light-absorbing layer prepared in the comparative example and water is 52°. Figure 7 (b) It can be seen that the angle between the perovskite photonics absorber layer prepared in Example 2 and water is 94°. Figure 7 (c) It can be seen that the angle between the perovskite light-absorbing layer prepared in Example 6 and the water is 95°. Compared with the angle between the perovskite light-absorbing layer without IT-M or IT-4F doping and the water, the angle between the perovskite light-absorbing layer in Example 2 and the perovskite light-absorbing layer in Example 6 is significantly increased. That is, doping the perovskite light-absorbing layer with IT-M or IT-4F can effectively inhibit the penetration of water into the perovskite film, thereby improving the stability of the battery module.

[0091] Figure 8 The lifetime curves are for the perovskite solar cells prepared in Comparative Examples, Example 2, and Example 6. Specifically, Figure 8 The graph shows the time taken for the photoelectric conversion efficiency of the perovskite solar cells prepared in Comparative Examples, Example 2, and Example 6 to decay to 90%, where the horizontal axis represents time (T) in hours (h), and the vertical axis represents photoelectric conversion efficiency. Figure 8 It can be seen that the time required for the photoelectric conversion efficiency of the perovskite solar cell in the comparative example to decay to 90% is approximately 125 hours, while the time required for the photoelectric conversion efficiency of the perovskite solar cells in Examples 2 and 6 to decay to 90% is approximately 500 hours. Compared to the time required for the photoelectric conversion efficiency of the perovskite light-absorbing layer without IT-M or IT-4F to decay to 90%, the time required for the photoelectric conversion efficiency of the perovskite light-absorbing layer in Examples 2 and 6 to decay to 90% is significantly increased. Doping the perovskite light-absorbing layer with IT-M or IT-4F can effectively improve the battery life.

[0092] In this embodiment, the battery assembly includes: a substrate and a plurality of battery cells, the plurality of battery cells being located on one side of the substrate; along a direction perpendicular to the substrate, each battery cell includes a first electrode layer, a functional layer, and a second electrode layer stacked sequentially; the functional layer includes a first transport layer, a perovskite light-absorbing layer, and a second transport layer stacked sequentially along a direction away from the substrate; wherein, the perovskite light-absorbing layer comprises a compound formed of perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead; a first groove is formed between the first electrode layers of two adjacent battery cells, the first transport layer filling the first groove; a second groove is formed between the second electrode layers of two adjacent battery cells; a third groove is formed between the functional layers of two adjacent battery cells, the second electrode layer filling the third groove and electrically connected to the first electrode layer of the adjacent battery cell. Lead in perovskite materials generates lead ions during annealing. By incorporating compounds formed from perovskite materials and non-fullerene acceptors into the perovskite light-absorbing layer, the non-fullerene acceptors can bind with lead ions in the perovskite light-absorbing layer during its formation. This reduces defects in the perovskite light-absorbing layer, thereby lowering the resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer. This reduces carrier recombination losses and improves the photoelectric conversion efficiency of perovskite solar cells. Specifically, non-fullerene acceptor materials include IT-M or IT-4F. Taking perovskite materials including lead methylammonium iodide as an example, when the non-fullerene acceptor material is IT-M, the example with a molar ratio of lead methylammonium iodide (MAPbI3) to IT-M of 0.5 (1 mol MAPbI3: 0.5 mol IT-M) exhibits the highest photoelectric conversion efficiency, approximately 19.59%. The relatively large grain size (approximately 777 nm to 977 nm) passivates defects in lead methylammonium iodide, thereby reducing defects in the perovskite light-absorbing layer, increasing the stability of the battery module, and improving its photoelectric conversion efficiency. The angle between the perovskite light-absorbing layer and water is 94°, effectively inhibiting water penetration into the perovskite film, thus improving the stability of the battery module. The time required for the photoelectric conversion efficiency to decay to 90% is approximately 500 hours, improving battery life. When the non-fullerene acceptor material is IT-4F, the example with a molar ratio of methylammonium lead iodide (MAPbI3) to IT-M of 0.5 (1 mol MAPbI3: 0.5 mol IT-4F) exhibits the highest photoelectric conversion efficiency, approximately 19.75%. The relatively large grain size (approximately 786 nm to 986 nm) passivates defects in MAPbI3, thereby reducing defects in the perovskite light-absorbing layer, increasing the stability of the battery module, and improving its photoelectric conversion efficiency. Furthermore, the angle between the perovskite light-absorbing layer and water is 95°, effectively inhibiting water penetration into the perovskite film, thus improving the stability of the battery module. The time required for the photoelectric conversion efficiency to decay to 90% is approximately 500 hours, extending the battery life.

[0093] Figure 9 This is a schematic flowchart illustrating a method for fabricating a battery module according to an embodiment of this application. Figure 9 As shown, this application provides a method for manufacturing a battery module, comprising:

[0094] Step S101: Prepare a first electrode layer on the substrate and perform a first laser etching on the first electrode layer to form a first groove.

[0095] Step S102: A functional layer is prepared on the side of the first electrode layer away from the substrate, and a second laser etching is performed on the functional layer to form a third groove.

[0096] The functional layer includes a first transport layer, a perovskite light absorption layer and a second transport layer stacked sequentially along the direction away from the substrate. The perovskite material in the perovskite light absorption layer contains lead, and the perovskite light absorption layer also includes a non-fullerene acceptor material.

[0097] Step S103: Prepare a second electrode layer on the side of the functional layer away from the substrate, and perform a third laser etching on the second electrode layer to form a second groove.

[0098] In this embodiment, lead ions are generated from lead in the perovskite material during annealing. By setting a compound formed from the perovskite material and a non-fullerene acceptor material in the perovskite light-absorbing layer, the non-fullerene acceptor material can combine with lead ions in the perovskite light-absorbing layer during the formation of the compound, reducing defects in the perovskite light-absorbing layer. This reduces the resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer, thereby reducing carrier recombination loss and improving the photoelectric conversion efficiency of the perovskite solar cell.

[0099] Figure 10 This is a schematic flowchart illustrating a method for preparing a battery module according to another embodiment of this application.

[0100] like Figure 10 As shown, the method for manufacturing this battery module includes:

[0101] Step S201: Prepare a first electrode layer on the substrate and perform a first laser etching on the first electrode layer to form a first groove.

[0102] Step S202: Prepare a first transport layer on the side of the first electrode layer away from the substrate.

[0103] Step S203: Prepare a perovskite light absorption layer on the side of the first transport layer away from the substrate.

[0104] Step S204: Prepare a second transport layer on the side of the perovskite light absorption layer away from the substrate to form a functional layer.

[0105] The functional layers include a first transport layer, a perovskite light absorption layer, and a second transport layer.

[0106] Step S205: Perform a second laser etching on the functional layer to form a third groove.

[0107] Step S206: Prepare a second electrode layer on the side of the functional layer away from the substrate, and perform a third laser etching on the second electrode layer to form a second groove.

[0108] Figure 11 This is a schematic flowchart illustrating a method for preparing a perovskite light-absorbing layer according to another embodiment of this application. The method for preparing the perovskite light-absorbing layer includes:

[0109] Step S301: Dissolve the perovskite precursor in a first solvent, and add a non-fullerene acceptor material to the first solvent, and mix them evenly to obtain a first solution.

[0110] The perovskite precursors include lead iodide and methylammonium iodide; and / or, the non-fullerene acceptor materials include IT-M or IT-4F.

[0111] In some embodiments, the perovskite precursor is pre-prepared and can be dissolved in a first solvent. A non-fullerene acceptor material is then added to the first solvent, and the mixture is stirred to form a first solution.

[0112] In other embodiments, the perovskite precursor is prepared from lead iodide (PbI3) and methylammonium iodide (MAI). Specifically, lead iodide (PbI3) is dissolved in NMP solvent to form a first solution, and methylammonium iodide (MAI) is dissolved in DMF solvent to form a second solution. The first and second solutions are mixed, and a non-fullerene acceptor material is added to form a first solution. Specifically, the mixture is magnetically stirred at a preset temperature for a preset time, wherein the preset temperature ranges from 65°C to 75°C, and the preset time ranges from 11.5h to 12.5h. The preset temperature can be any of 65°C, 68°C, 70°C, 72°C, 75°C, etc.; the preset time can be any of 11.5h, 11.8h, 12h, 12.3h, 12.5h, etc.

[0113] For example, 580 mg of lead iodide (PbI3) was dissolved in 0.4 ml of N-methylpyrrolidone (NMP) solvent to form a sub-solution, and 200 mg of methylammonium iodide (MAI) was dissolved in 0.6 ml of N,N-dimethylformamide (DMF) solvent to form a sub-solution. The sub-solutions were mixed, and 0.5 mg of IT-M or IT-4F was added to 1 ml of the mixture of sub-solutions. The mixture was then magnetically stirred at 70 °C for 12 h.

[0114] Step S302: Spin-coat the first solution onto the side of the first transport layer away from the substrate, and drop-add the second solvent as an anti-solvent, and anneal to obtain the perovskite light absorption layer.

[0115] The second solvent can be toluene or chlorobenzene. The annealing temperature ranges from 85°C to 95°C, and can be any one of 85°C, 88°C, 90°C, 93°C, or 95°C. The annealing time ranges from 9.5 min to 10.5 min, and can be any one of 9.5 min, 9.8 min, 10.0 min, 10.3 min, or 10.5 min.

[0116] In some embodiments, a settling process is required before annealing. The settling time ranges from 14.5 min to 15.5 min, and the settling time can be any one of 14.5 min, 14.8 min, 15 min, 15.3 min, 15.5 min, etc.

[0117] In this embodiment, small molecules IT-M and IT-4F are introduced into a methylammonium lead iodide (MAPbI3) film via perovskite precursor solution engineering. They combine with lead ions in the perovskite light-absorbing layer, reducing defects in the perovskite light-absorbing layer. This reduces the resistance between the perovskite light-absorbing layer and the electron transport layer, and between the perovskite light-absorbing layer and the hole transport layer, thereby reducing carrier recombination losses and improving the photoelectric conversion efficiency of the perovskite solar cell.

[0118] Figure 12 This is a schematic flowchart illustrating a method for preparing a battery module according to another embodiment of this application.

[0119] like Figure 12 As shown, the method for manufacturing this battery module includes:

[0120] Step S401: Prepare the first electrode layer on the substrate by magnetron sputtering or vapor deposition.

[0121] Step S402: Perform first laser etching on the first electrode layer to form a first groove.

[0122] Step S403: Spin-coat the material of the first transport layer on the side of the first electrode layer away from the substrate, and anneal the material to obtain the first transport layer.

[0123] Step S404: Prepare a perovskite light absorption layer on the side of the first transport layer away from the substrate.

[0124] The preparation method of the perovskite light-absorbing layer can be referred to Figure 11 This will not be elaborated upon here.

[0125] Step S405: Spin-coat the material of the second transport layer on the side of the perovskite light absorption layer away from the substrate, and anneal the material to obtain the second transport layer.

[0126] Step S406: Spin-coat the hole blocking layer material on the side of the second transport layer away from the substrate, and anneal the material to obtain the hole blocking layer.

[0127] Step S407: Perform a second laser etching on the first transport layer, the perovskite light absorption layer, the second transport layer, and the hole blocking layer to form a third groove.

[0128] Step S408: Prepare a second electrode layer on the side of the functional layer away from the substrate by vapor deposition.

[0129] Step S409: Perform a third laser etching on the second electrode layer to form a second groove.

[0130] In this embodiment, lead ions are generated during annealing of the lead element in the perovskite material. By setting a non-fullerene acceptor material in the perovskite light absorption layer, the lead ions in the perovskite light absorption layer are combined with the lead ions in the perovskite light absorption layer, thereby reducing the defects in the perovskite light absorption layer. This reduces the resistance between the perovskite light absorption layer and the electron transport layer, and between the perovskite light absorption layer and the hole transport layer, reduces carrier recombination loss, and improves the photoelectric conversion efficiency of the perovskite solar cell.

[0131] Figure 13 This is a schematic diagram of the structure of a solar cell provided in one embodiment of this application. Figure 13 As shown, this application provides a solar cell 1100, which includes any of the aforementioned cell modules 100, or a cell module 100 prepared by any of the aforementioned preparation methods.

[0132] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0133] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0134] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0135] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0136] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

[0137] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A battery assembly, characterized in that, include: Substrate; Multiple battery cells are located on one side of the substrate; along a direction perpendicular to the substrate, each battery cell includes a first electrode layer, a functional layer, and a second electrode layer stacked sequentially. The functional layer includes a first transport layer, a perovskite light-absorbing layer, and a second transport layer sequentially stacked along a direction away from the substrate; wherein the perovskite light-absorbing layer comprises a compound formed of perovskite material and non-fullerene acceptor material, wherein the perovskite material contains lead. A first groove is formed between the first electrode layers of two adjacent battery cells, and the first transmission layer fills the first groove. A second groove is formed between the second electrode layers of two adjacent battery cells, and a third groove is formed between the functional layers of two adjacent battery cells. The second electrode layer fills the third groove and is electrically connected to the first electrode layer of the adjacent battery cell.

2. The battery assembly according to claim 1, characterized in that, The non-fullerene acceptor material includes IT-M, and the structural formula of IT-M is Formula I: Preferably, the molar ratio of IT-M to the perovskite material ranges from 0 to 1.0; Preferably, the molar ratio of IT-M to the perovskite material is 0.

5.

3. The battery assembly according to claim 1, characterized in that, The non-fullerene acceptor material includes IT-4F, and the structural formula of IT-4F is Formula II: Preferably, the molar ratio of IT-4F to the perovskite material ranges from 0 to 1.0; Preferably, the molar ratio of IT-4F to the perovskite material is 0.

5.

4. The battery assembly according to claim 1, characterized in that, The perovskite material includes lead methylammonium iodide.

5. The battery assembly according to claim 1, characterized in that, The first transport layer includes a hole transport layer, and the second transport layer includes an electron transport layer; Preferably, the material of the first transport layer includes at least one of 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-difluorene, cuprous iodide, cuprous thiocyanate, copper oxide, cuprous oxide, nickel oxide, copper aluminate, vanadium pentoxide, cadmium sulfide, cadmium selenide, or poly(3,4-ethylenedioxythiophene):poly(p-styrene sulfonate); and / or, the material of the second transport layer includes at least one of [6,6]-phenyl-C61-butyrate, titanium dioxide, zinc oxide, tungsten trioxide, tin dioxide, zinc stannate, fullerene, or fullerene derivatives; Preferably, the functional layer further includes a hole blocking layer located on the side of the second transport layer opposite to the substrate; Preferably, the hole-blocking layer is made of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline. Preferably, the first electrode layer comprises a transparent electrode layer; and / or, the second electrode layer comprises a transparent electrode layer or a non-transparent electrode layer; Preferably, the orthographic projection of the third groove on the substrate is located between the orthographic projections of the first groove on the substrate and the orthographic projections of the second groove on the substrate.

6. A method for preparing a battery module, characterized in that, include: A first electrode layer is fabricated on a substrate, and the first electrode layer is subjected to a first laser etching to form a first groove; A functional layer is prepared on the side of the first electrode layer away from the substrate, and the functional layer is subjected to a second laser etching to form a third groove. The functional layer includes a first transport layer, a perovskite light absorption layer and a second transport layer stacked sequentially along the direction away from the substrate. The perovskite light absorption layer includes a compound formed of perovskite material and non-fullerene acceptor material. The perovskite material contains lead. A second electrode layer is prepared on the side of the functional layer opposite to the substrate, and the second electrode layer is subjected to a third laser etching to form a second groove.

7. The method for preparing a battery module according to claim 6, characterized in that, The step of fabricating a functional layer on the side of the first electrode layer away from the substrate includes: A first transport layer is prepared on the side of the first electrode layer opposite to the substrate; A perovskite light-absorbing layer is prepared on the side of the first transport layer away from the substrate; A second transport layer is prepared on the side of the perovskite light-absorbing layer opposite to the substrate.

8. The method for preparing a battery module according to claim 7, characterized in that, The step of fabricating a perovskite light-absorbing layer on the side of the first transport layer away from the substrate includes: The perovskite precursor is dissolved in a first solvent, and the non-fullerene acceptor material is added to the first solvent and mixed evenly to obtain a first solution. The first solution was spin-coated onto the side of the first transport layer away from the substrate, and a second solvent was added as an antisolvent. The mixture was then annealed to obtain a perovskite light-absorbing layer. Preferably, the perovskite precursor comprises lead iodide and methylammonium iodide; and / or, the non-fullerene acceptor material comprises IT-M or IT-4F; Preferably, the first solvent comprises at least one of N,N-dimethylformamide and N-methylpyrrolidone; and / or, the second solvent comprises chlorobenzene or toluene; Preferably, the annealing temperature is greater than or equal to 70°C and less than or equal to 150°C.

9. The method for preparing a battery module according to claim 7, characterized in that, The fabrication of the first electrode layer on the substrate includes: The first electrode layer is prepared on the substrate by magnetron sputtering or vapor deposition; Preferably, the step of fabricating the second electrode layer on the side of the functional layer away from the substrate includes: fabricating the second electrode layer on the side of the functional layer away from the substrate by vapor deposition; Preferably, the step of preparing the first transport layer on the side of the first electrode layer away from the substrate includes: spin-coating the material of the first transport layer on the side of the first electrode layer away from the substrate, and annealing to obtain the first transport layer; Preferably, the step of preparing the second transport layer on the side of the perovskite light-absorbing layer away from the substrate includes: spin-coating the material of the second transport layer on the side of the perovskite light-absorbing layer away from the substrate, and annealing to obtain the second transport layer; Preferably, after preparing the second transport layer, the preparation method further includes: spin-coating the material of the hole blocking layer onto the side of the second transport layer away from the substrate, and annealing to obtain the hole blocking layer.

10. A solar cell, characterized in that, The battery assembly includes the battery assembly described in any one of claims 1 to 5, or the battery assembly prepared by the preparation method described in any one of claims 6 to 9.

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