Spintronic device for visible light interface magnetic control

Abstract

The application relates to the technical field of spin electronic devices, and discloses a spin electronic device for visible light interface magnetic regulation, a preparation method of the spin electronic device and electronic equipment. The spin electronic device comprises a substrate, a bottom electrode located above the substrate, a magnetic layer located above the bottom electrode, which can change an out-of-plane ferromagnetic resonance field of the magnetic layer under the action of an exciton, the magnetic layer being an aluminum-doped cobalt alloy, an active layer located above the magnetic layer, which can generate an exciton under the action of visible light, and a top electrode located above the active layer. Through the synergistic effect of the magnetic layer and the active layer, the out-of-plane ferromagnetic resonance field of the visible light interface can be regulated, the injection efficiency of photo-generated electrons into the magnetic layer is improved, the regulation range of the light-controlled magnetism is expanded, and the spin electronic device has the beneficial effects of simple structure and easy realization.

Description

Technical Field

[0001] This invention relates to the field of spintronic device technology, and in particular to a spintronic device for visible light interface magnetic modulation, its fabrication method, and electronic equipment. Background Technology

[0002] Spintronic devices are a new type of electronic device that uses the spin degree of freedom of electrons to store, transmit, and process information.

[0003] Spintronic devices based on visible light-controlled interfacial magnetism can generate excitons at the donor / acceptor heterojunction interface using sunlight. Due to the different work functions of the top electrode, donor, acceptor, and magnetic layer, the excited electrons move into and are injected into the magnetic layer. As the energy levels fill, the Fermi level of the magnetic layer changes, and the magnetic anisotropy of the magnetic layer weakens. When the light source is turned off, electron-hole recombination becomes dominant, the electron density of the magnetic layer decreases, and the magnetic anisotropy is restored, thus achieving the purpose of modulating the interfacial magnetism.

[0004] In existing spintronic devices, the injection efficiency of the electron-injected magnetic layer is generally not high, which limits the control range of optically controlled magnetism.

[0005] In summary, researching a spintronic device with high electron injection magnetic layer efficiency for visible light modulation of interface magnetism is of great significance. Summary of the Invention

[0006] The purpose of this invention is to propose a spintronic device for visible light-controlled interface magnetism, its fabrication method, and an electronic device, in order to improve the problem of low efficiency in electron injection magnetic layers of existing spintronic devices.

[0007] To achieve the above objectives, a first aspect of the present invention provides a spintronic device for magnetic modulation of visible light interfaces, the spintronic device comprising: Base; The bottom electrode is located above the substrate; A magnetic layer, located above the bottom electrode, can alter the out-of-plane ferromagnetic resonance field of the magnetic layer under the influence of excitons; the magnetic layer is an aluminum-doped cobalt alloy. An active layer, located above the magnetic layer, is capable of generating excitons under visible light. The top electrode is located above the active layer.

[0008] According to some embodiments of the present invention, the aluminum-doped cobalt alloy comprises cobalt-based amorphous material.

[0009] According to some embodiments of the present invention, the aluminum doping content in the aluminum-doped cobalt alloy is 20-50%.

[0010] According to some embodiments of the present invention, the out-of-plane ferromagnetic resonance field of the spintronic device under visible light irradiation is smaller than its out-of-plane ferromagnetic resonance field in the dark state. The greater the intensity of the visible light, the smaller the out-of-plane ferromagnetic resonance field of the spintronic device.

[0011] According to some embodiments of the present invention, the coercive field of the spintronic device under visible light irradiation is smaller than its coercive field in the dark state.

[0012] According to some embodiments of the present invention, the surface roughness of the magnetic layer is less than that of metallic cobalt.

[0013] According to some embodiments of the present invention, the substrate is one of Si, SiO2, Al2O3, MgO, silicon wafer with silicon oxide, mica, glass, SrTiO3, GaN, GaAs, InAs, polyethylene terephthalate or polycarbonate.

[0014] According to some embodiments of the present invention, the bottom electrode is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN.

[0015] According to some embodiments of the present invention, the active layer includes a donor and an acceptor; The donor is one of PTB7-Th, MEH-PPV, MDMO-PPV, CN-PPV, M3EH-PPV, 3-hexylthiophene, oligothiophene small molecules, dye small molecules, heterobenzoxene small molecules, or triphenylamine-containing compounds. The receptor is one of PC71BM, PC61BM, IC6OBA, IC7OBA, imides, benzothiadiazoles, or fused-ring aromatic compounds.

[0016] According to some embodiments of the present invention, the work function of the top electrode is greater than 5.0 eV; preferably, the top electrode is one of Pt, Au or PEDOT / PSS.

[0017] To achieve the above objectives, a second aspect of the present invention provides a method for fabricating a spintronic device, wherein the spintronic device is the aforementioned spintronic device; the fabrication method includes the following steps: S100 has a bottom electrode disposed on the substrate; S200 has a magnetic layer on the bottom electrode; S300 places the active layer solution on the magnetic layer; The S400 has a top electrode on the active layer.

[0018] According to some embodiments of the present invention, the bottom electrode is disposed on the substrate by DC magnetron sputtering.

[0019] According to some embodiments of the present invention, the magnetic layer is disposed on the bottom electrode by DC magnetron co-sputtering.

[0020] According to some embodiments of the present invention, the top electrode layer is disposed on the active layer by DC magnetron sputtering.

[0021] To achieve the above objectives, a third aspect of the present invention provides an electronic device, the electronic device comprising a spintronic device; The spintronic device is the aforementioned spintronic device, or a spintronic device prepared by the aforementioned method.

[0022] Therefore, compared with the prior art, the present invention has the following beneficial effects: The spintronic device provided by this invention includes: a substrate; a bottom electrode located above the substrate; a magnetic layer located above the bottom electrode, which is an aluminum-doped cobalt alloy capable of altering the out-of-plane ferromagnetic resonance field of the magnetic layer under the influence of excitons; an active layer located above the magnetic layer capable of generating excitons under visible light; and a top electrode located above the active layer. This invention achieves tunable out-of-plane ferromagnetic resonance field at the visible light interface through the synergistic effect of the magnetic layer and the active layer, while simultaneously improving the injection efficiency of photogenerated electrons into the magnetic layer and expanding the controllability of light-controlled magnetism. It has the advantages of simple structure and ease of implementation. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the structure of a spintronic device according to an embodiment of the present invention; Figure 2 This is a curve showing the surface roughness of the magnetic layer as a function of aluminum doping amount in one embodiment of the present invention. Figure 3 This is a curve showing the change in magnetic saturation intensity of the magnetic layer as a function of aluminum doping amount according to an embodiment of the present invention. Figure 4 This is a curve showing the coercive field of the magnetic layer as a function of aluminum doping amount in an embodiment of the present invention. Figure 5This is a curve showing the out-of-plane ferromagnetic resonance field of a spintronic device according to an embodiment of the present invention as a function of visible light intensity. Figure 6 The curves showing the out-of-plane ferromagnetic resonance field of the comparative spintronic device of this invention as a function of visible light intensity are shown. Figure 7 The hysteresis loop of a spintronic device according to an embodiment of the present invention before and during visible light irradiation. Figure 8 This is a schematic diagram of a method for fabricating a spintronic device according to an embodiment of the present invention.

[0025] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0027] It should be noted that if the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0028] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0029] Spintronic devices are a new type of electronic device that uses the spin degree of freedom of electrons to store, transmit, and process information.

[0030] Spintronic devices based on visible light-controlled interfacial magnetism can generate excitons at the donor / acceptor heterojunction interface using sunlight. Due to the different work functions of the top electrode, donor, acceptor, and magnetic layer, the excited electrons move into and are injected into the magnetic layer. As the energy levels fill, the Fermi level of the magnetic layer changes, and the magnetic anisotropy of the magnetic layer weakens. When the light source is turned off, electron-hole recombination becomes dominant, the electron density of the magnetic layer decreases, and the magnetic anisotropy is restored, thus achieving the purpose of modulating the interfacial magnetism.

[0031] In existing spintronic devices, the injection efficiency of the electron-injected magnetic layer is generally not high, which limits the control range of optically controlled magnetism.

[0032] In summary, researching a spintronic device with high electron injection magnetic layer efficiency for visible light modulation of interface magnetism is of great significance.

[0033] This invention discloses a spintronic device for controlling interface magnetism under visible light, which improves the problem of low electron injection magnetic layer efficiency in existing spintronic devices for controlling interface magnetism under visible light.

[0034] like Figure 1 As shown, the spintronic device of this embodiment includes a substrate 100, a bottom electrode 200, a magnetic layer 300, an active layer 400, and a top electrode 500. The bottom electrode 200 is located above the substrate 100; the magnetic layer is above the bottom electrode; the active layer is above the magnetic layer; and the top electrode is above the active layer.

[0035] The active layer in this embodiment of the invention can generate excitons under visible light.

[0036] It should be understood that when visible light shines on the active layer, the photons of the visible light can be absorbed by the active material in the active layer; the energy of these photons can excite electrons to "flip" from the valence band to the conduction band, leaving a "hole"; the excited electron and the left-behind hole are "bound" together by electrostatic attraction, forming an "exciton". This exciton can "separate" at a built-in electric field or interface, becoming an electron and a hole. This electron is also called a photogenerated electron.

[0037] The magnetic layer in this embodiment of the invention is an aluminum-doped cobalt alloy, which can generate a Fermi level change under the action of excitons.

[0038] It should be understood that due to the work function difference between the active layer and the magnetic layer, a built-in electric field is formed between them. Excitons generated in the active layer can dissociate into electrons and holes under the drive of this built-in electric field. These electrons (i.e., photogenerated electrons), after being injected into the magnetic layer, can occupy the 3d unpaired orbitals of cobalt in the cobalt-doped alloy, altering the local magnetic moment and thus changing the Fermi level of the magnetic layer, affecting its magnetic properties. When visible light weakens to the point of disappearing, recombination of electrons and holes becomes dominant, the electron density of the magnetic layer decreases, and the magnetic anisotropy is restored.

[0039] The aluminum-doped cobalt alloy of this invention comprises cobalt-based amorphous material, wherein the work function of the doped aluminum is less than 5.0 eV.

[0040] It should be understood that doping with aluminum in cobalt-doped aluminum alloys can induce the formation of an amorphous phase, i.e., cobalt-based amorphous phase, thereby enhancing the sensitivity of spin-orbit coupling to electron response and significantly modulating the magnetic anisotropy and magnetic damping of the magnetic layer. Simultaneously, when the work function of the doped aluminum is below 5.0 eV, it can effectively reduce the overall work function of the magnetic layer, enhance the energy level matching between the magnetic layer and the active layer, and promote the efficient injection of photogenerated electrons from the active layer to the magnetic layer.

[0041] It should be understood that magnetic damping is a phenomenon that uses the principle of electromagnetic induction to generate damping force, thereby suppressing the motion or vibration of an object.

[0042] The work function of the doped metal Al in this embodiment of the invention is 4.28 eV, which is significantly lower than that of cobalt. Using an aluminum-doped cobalt alloy as the magnetic layer, the magnetic layer can reduce the out-of-plane ferromagnetic resonance field under the influence of excitons.

[0043] It should be understood that the out-of-plane ferromagnetic resonance field is the critical magnetic field value at which a magnetic material resonates when a magnetic field is applied perpendicularly. This out-of-plane ferromagnetic resonance field serves as a precise benchmark for measuring perpendicular magnetic anisotropy and is also an invisible guide for spintronic device design. The out-of-plane ferromagnetic resonance field determines the threshold for magnetization reversal; if the strength of the out-of-plane ferromagnetic resonance field is too low, magnetization is easily disturbed; if the strength of the out-of-plane ferromagnetic resonance field is too high, it can easily lead to excessive write power consumption. By adjusting the out-of-plane ferromagnetic resonance field, the performance of the device can be precisely controlled.

[0044] The out-of-plane ferromagnetic resonance field of the spintronic device in this embodiment of the invention can decrease monotonically as the intensity of visible light increases.

[0045] It should be understood that the intensity of the out-of-plane ferromagnetic resonance field of the magnetic layer can be controlled by the intensity of visible light.

[0046] In the embodiment of the present invention, the aluminum doping content in the aluminum-doped cobalt alloy of the magnetic layer is 40%.

[0047] It should be understood that the higher the aluminum doping content, the lower the magnetic saturation strength of the magnetic layer. Appropriate amounts of doped aluminum can improve the thin-film balance of the magnetic layer, reduce its surface roughness, enhance electron transport efficiency, and simultaneously reduce the coercive field of the magnetic layer.

[0048] The surface roughness of the magnetic layer in this embodiment of the invention is less than that of cobalt metal.

[0049] The substrate in this embodiment of the invention is made of Si.

[0050] It should be noted that the substrate material is not limited to Si; it can also be SiO. 2、 Al2O3, MgO, silicon wafers with silicon oxide, mica, glass, SrTiO3, GaN, GaAs, InAs, polyethylene terephthalate or polycarbonate, or other materials, are not specifically limited here.

[0051] The bottom electrode in this embodiment of the invention is made of Ta.

[0052] It should be noted that the material of the bottom electrode is not limited to Ta, but can also be any one of Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN or TiN, or other materials, which are not specifically limited here.

[0053] The active layer of this invention includes a donor and an acceptor, wherein the donor is PTB7-Th and the acceptor is PC71BM.

[0054] It should be understood that PTB7-Th is a conjugated polymer based on a thiophene / furan structure, with CAS number 1469791-66-9 and molecular formula (C 49 H 57 FO2S6) n This conjugated polymer can efficiently convert light energy into electrical energy. PC71BM is an abbreviation for methyl [6,6]-phenyl-C71 butyrate.

[0055] It should be noted that the active layer can also be one of MEH-PPV, MDMO-PPV, CN-PPV, M3EH-PPV, 3-hexylthiophene, oligothiophene small molecules, dye small molecules, heterobenzobenzene small molecules, or triphenylamine-containing materials or other materials with similar functions.

[0056] It should be understood that MEH-PPV is an abbreviation for poly[2-methoxy-5-(2-ethylhexoxy)-1,4-styrene], MDMO-PPV is an abbreviation for poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene)vinyl], CN-PPV is an abbreviation for poly(5-(2-ethylhexoxy)-2-methoxy-cyano-terephthalimide), and M3EH-PPV is an abbreviation for poly[2-methoxy-5-(2-ethylhexoxy)-1,4-styrenevinyl]

[0057] It should be noted that the receptor can also be one of PC61BM, IC6OBA, IC7OBA, imides, benzothiadiazoles, fused-ring aromatic compounds, or other materials with similar functions, which are not specifically limited here.

[0058] It should be understood that PC61BM is the abbreviation for methyl [6,6]-phenyl-C61-butyrate, IC6OBA is the abbreviation for indene diaddition C60 fullerene derivative, and IC7OBA is the abbreviation for indene-C70 diaddition.

[0059] In this embodiment of the invention, the top electrode is Pt.

[0060] It should be noted that when the work function of the top electrode is greater than that of the magnetic layer, it can promote the separation of excitons into electrons and holes and facilitate the migration of electrons to the magnetic layer. The work function of this top electrode should be greater than 5.0 eV. In addition to Pt, the top electrode can also be Au, PEDOT / PSS, or other materials with similar functions; specific limitations are not specified here.

[0061] It should be understood that PEDOT / PSS is an abbreviation for poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid).

[0062] The following verifies the performance of the spintronic device in the embodiments of the present invention.

[0063] (1) The surface roughness of the magnetic layer with different aluminum doping amounts was observed by atomic force microscopy (AFM) as shown in the curve. Figure 2 As shown.

[0064] in accordance with Figure 2The surface roughness of the magnetic layer with aluminum doping concentrations of 20% and 30% was significantly greater than that with 0% aluminum doping. At an aluminum doping concentration of 40%, the surface roughness of the magnetic layer underwent a significant transformation, exhibiting an exceptionally smooth surface with a roughness of only 0.38 nm, far lower than that of a pure Co film. This change in surface roughness can be attributed to the fact that as the Al content increases, Al atoms gradually fill the interstitial sites of Co atoms. This filling effectively improves the surface smoothness of the film, while smaller Al grains are uniformly dispersed on the film, forming a more dense and uniform microstructure.

[0065] This indicates that appropriate aluminum doping can reduce the surface roughness of the magnetic layer, making the surface roughness of the magnetic layer less than that of metallic cobalt.

[0066] (2) The hysteresis loops of the magnetic layer with different aluminum doping concentrations were measured in situ using a vibrating sample magnetometer (VSM). The curves showing the change in magnetic saturation intensity of the magnetic layer with aluminum doping concentration are as follows: Figure 3 As shown in the figure. The curve of the coercivity field of the magnetic layer as a function of aluminum doping concentration is as follows. Figure 4 As shown.

[0067] like Figure 3 As shown, the magnetic saturation intensity Ms of the magnetic layer decreases monotonically with increasing aluminum doping concentration when the Al doping concentration is 0-50%; the saturation magnetization of the magnetic layer is 640±5 emu·cm when the Al doping concentration is 0%. -3 The saturation magnetization of the magnetic layer is 600 ± 3 emu·cm when the Al doping concentration is 20%. -3 When the Al doping concentration is 40%, the saturation magnetization of the magnetic layer is 420 ± 3 emu·cm. -3 As the Al doping concentration increases, the magnetic susceptibility decreases significantly, indicating that the introduction of Al leads to lattice distortion and stress accumulation, which in turn increases the domain wall pinning effect.

[0068] like Figure 4 As shown, the coercive field Hc of the magnetic layer is 19Oe when the Al doping amount is 0%, 33Oe when the Al doping amount is 20%, 33Oe when the Al doping amount is 30%, 19Oe when the Al doping amount is 40%, and 5Oe when the Al doping amount is 50%.

[0069] This indicates that the coercive field and magnetic saturation intensity of the magnetic layer vary with the amount of aluminum doping.

[0070] (4) In-situ testing of the spintronic device of this embodiment of the invention under an application of 100 mW·cm using a vibrating sample magnetometer (VSM) -2 Before xenon lamp irradiation and application of 100mW·cm -2The hysteresis loop during xenon lamp illumination is as follows: Figure 7 As shown. Based on Figure 7 The magnetic saturation intensity and coercive field of spintronic devices also show a decreasing trend. Under visible light illumination, the magnetic saturation intensity of spintronic devices decreases from 420±2 emu·cm. 3 Decreased to 410±2 emu·cm 3 The coercive field Hc decreased from 19Oe to 11Oe.

[0071] This indicates that spintronic devices exhibit significantly smaller coercive fields and lower magnetic saturation strength under visible light illumination.

[0072] (5) The out-of-plane ferromagnetic resonance field Hr of the visible light-controlled spintronic device of the present invention and the comparative spintronic device were characterized by ESR. The characterization results are as follows: Figure 5 and Figure 6 As shown. Figure 6 The curves showing the out-of-plane ferromagnetic resonance field of a comparative spintronic device with 40% aluminum doping as a function of visible light intensity. Figure 5 The curves showing the out-of-plane ferromagnetic resonance field of the spintronic device of the present invention with 40% aluminum doping as a function of visible light are shown. It should be understood that the out-of-plane ferromagnetic resonance field Hr is the maximum value of the resonance absorption peak in the energy component of ferromagnetic resonance absorption. This parameter field is an important analytical indicator used to characterize the changes in the magnetic anisotropy field of the sample.

[0073] The change in the out-of-plane ferromagnetic resonance field, ΔHr, is the difference between the ferromagnetic resonance field under illumination and darkness conditions when the angle between the thin film plane and the external magnetic field is 90 degrees. It can be used to quantify the intensity of the light-controlled magnetization effect.

[0074] like Figure 5 and Figure 6 As shown, before visible light irradiation, the out-of-plane ferromagnetic resonance field of the comparative spintronic device with 0% aluminum doping is less than 9900 Oe, while the out-of-plane ferromagnetic resonance field of the spintronic device of the present invention with 40% aluminum doping exceeds 12500 Oe, indicating that the spintronic device of the present invention has a strong out-of-plane ferromagnetic resonance field.

[0075] in accordance with Figure 5 and Figure 6 At 100mW·cm -2 Under xenon lamp irradiation, the out-of-plane ferromagnetic resonance field change ΔHr of the comparative spintronic device with 0% aluminum doping is -1061 Oe, while the out-of-plane ferromagnetic resonance field change ΔHr of the spintronic device of the present invention with 40% aluminum doping is -2241 Oe. This indicates that metal doping can allow more photogenerated electrons to enter the magnetic layer, thereby enhancing the control of interface magnetism by visible light.

[0076] like Figure 5 As shown, at 0 mW·cm -2 50 mW·cm -2 100 mW·cm -2 150 mW·cm -2 200 mW·cm -2 Under xenon lamp irradiation, the out-of-plane ferromagnetic resonance fields of the spintronic device of this invention, with an aluminum doping content of 40%, were 12711 Oe, 10671 Oe, 10470 Oe, 10250 Oe, and 9955 Oe, respectively. Based on... Figure 5 The out-of-plane ferromagnetic resonance field of a spintronic device under visible light illumination is smaller than its out-of-plane ferromagnetic resonance field in the dark state; the greater the intensity of visible light, the smaller the out-of-plane ferromagnetic resonance field of the spintronic device. Therefore, as the number of photoelectrons at the light intensity interface increases, the magnetic modulation amount increases.

[0077] Therefore, compared with the prior art, the embodiments of the present invention have the following beneficial effects: The spintronic device provided by this invention includes: a substrate; a bottom electrode located above the substrate; a magnetic layer located above the bottom electrode, which is a cobalt-doped alloy capable of generating a Fermi level change under the influence of excitons; an active layer located above the magnetic layer capable of generating excitons under visible light; and a top electrode located above the active layer. This invention, through the synergistic effect of the magnetic layer and the active layer, achieves opto-electro-magnetic coupling while improving the electron injection efficiency of the magnetic layer, expanding the modulation amplitude of its out-of-plane ferromagnetic resonance field, and possesses the advantages of simple structure and ease of implementation.

[0078] This invention also discloses a method for fabricating the above-mentioned spintronic device, such as... Figure 8 As shown, the preparation method includes the following steps: S100 has a bottom electrode disposed on the substrate; Specifically, Si (100) was used as the substrate, and a Ta film was deposited on the substrate at room temperature by a high-vacuum DC magnetron sputtering method. The Ta film served as the bottom electrode. The thickness of the Ta film was 4 nm.

[0079] Vacuum degree is 2×10 -7 The operating pressure was 5 mTorr, the sputtering power was set to 30 W, and the sputtering time was 180 s.

[0080] It should be noted that the thickness of the Ta film can be 3~10nm, the working pressure can be 3~5mTorr, and the sputtering power can be 30W~50W.

[0081] It should be understood that during the sputtering process, quartz crystal microbalance (QCM) technology integrated into the magnetron sputtering system is used to monitor and calibrate the deposition rate in real time.

[0082] S200 has a magnetic layer on the bottom electrode; Specifically, aluminum-doped cobalt alloy Co was deposited on Ta at room temperature using a DC co-sputtering method. x Al 1-x A thin film, specifically an aluminum-doped cobalt alloy film, is used as the magnetic layer. The thickness of the aluminum-doped cobalt alloy film is 1-2 nm, and the Al doping content is 40%.

[0083] It should be noted that this step uses two independent DC power supplies to control the sputtering processes of the Co and Al targets respectively. During the experiment, the Co and Al targets were first pre-sputtered, then the target cover plates were opened simultaneously for co-sputtering. The substrate was kept at room temperature, and the uniformity of the film was ensured by rotating the sample stage. During co-sputtering, the sputtering power of the Co target was kept constant at 40W, and the Co layer thickness was ensured to be 1nm by fixing the growth time. The sputtering power of the Al target was adjusted within the range of 10~50W. By changing the sputtering power of Al, the Al content was controlled to obtain an Al doping level of 20~50%.

[0084] S300 places the active layer solution on the magnetic layer; Specifically, in a nitrogen glove box, PTB7-Th and PC71BM were dissolved in 1,2-dichlorobenzene solvent at a mass ratio of 1:1.5, and 3 vol% DIO additive was added to prepare a 15 mg / mL solution; the solution was then spin-coated onto the surface of a CoAl film at 2000 rpm for 30 s to form a uniform organic active layer.

[0085] The S400 has a top electrode on the active layer.

[0086] Specifically, a layer of metal Pt electrode is sputtered on the active layer using DC magnetron sputtering as the top electrode; the thickness is 3 nm.

[0087] The complete structure of the spintronic device obtained in the embodiments of the present invention can be represented as Si / Ta / Co. 0.6 Al 0.4 / PC 71 BM:PTB7-Th / Pt.

[0088] The present invention also discloses an electronic device, which includes the above-described spintronic device or a spintronic device prepared by the above-described method.

[0089] The above are merely exemplary embodiments of the present invention and do not limit the scope of the patent of the present invention. All equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the scope of patent protection of the present invention.

Claims

1. A spintronic device for magnetic modulation of visible light interfaces, characterized in that, include: Base; The bottom electrode is located above the substrate; A magnetic layer, located above the bottom electrode, can change the out-of-plane ferromagnetic resonance field of the magnetic layer under the action of excitons; the magnetic layer is an aluminum-doped cobalt alloy. An active layer, located above the magnetic layer, is capable of generating excitons under visible light. The top electrode is located above the active layer.

2. The spintronic device according to claim 1, characterized in that, The aluminum-doped cobalt alloy includes cobalt-based amorphous alloys.

3. The spintronic device according to claim 1, characterized in that, The aluminum doping content in the aluminum-doped cobalt alloy is 20-50%.

4. The spintronic device according to claim 1, characterized in that, The out-of-plane ferromagnetic resonance field of the spintronic device under visible light illumination is smaller than its out-of-plane ferromagnetic resonance field in the dark state. The greater the intensity of the visible light, the smaller the out-of-plane ferromagnetic resonance field of the spintronic device.

5. The spintronic device according to claim 1, characterized in that, The coercive field of the spintronic device under visible light illumination is smaller than its coercive field in the dark state.

6. The spintronic device according to claim 1, characterized in that, The surface roughness of the magnetic layer is less than that of metallic cobalt.

7. The spintronic device according to claim 1, characterized in that, The substrate is one of Si, SiO2, Al2O3, MgO, silicon wafer with silicon oxide, mica, glass, SrTiO3, GaN, GaAs, InAs, polyethylene terephthalate or polycarbonate. The bottom electrode is one of Ta, Au, Ag, Al, Cu, Pt, W, Ti, Mo, TaN, or TiN; The active layer includes donors and acceptors; The donor is one of PTB7-Th, MEH-PPV, MDMO-PPV, CN-PPV, M3EH-PPV, 3-hexylthiophene, oligothiophene small molecules, dye small molecules, heterobenzoxene small molecules, or triphenylamine-containing compounds. The receptor is one of PC71BM, PC61BM, IC6OBA, IC7OBA, imides, benzothiadiazoles, or fused-ring aromatic compounds; The work function of the top electrode is greater than 5.0 eV; preferably, the top electrode is one of Pt, Au or PEDOT / PSS.

8. A method for fabricating a spintronic device, characterized in that, The spintronic device is the spintronic device according to any one of claims 1-7; the preparation method includes the following steps: A bottom electrode is disposed on the substrate; A magnetic layer is disposed on the bottom electrode; The active layer solution is placed on the magnetic layer; A top electrode is disposed on the active layer.

9. The preparation method according to claim 8, characterized in that, The bottom electrode is disposed on the substrate by DC magnetron sputtering. The magnetic layer is deposited on the bottom electrode by DC magnetron co-sputtering. The top electrode layer is deposited on the active layer by DC magnetron sputtering.

10. An electronic device, characterized in that, Including spintronic devices; The spintronic device is the spintronic device according to any one of claims 1-7, or the spintronic device prepared by the method according to claim 8 or 9.

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