A semiconductor process apparatus

Abstract

The application provides a semiconductor process equipment, which comprises a process chamber and a susceptor, and the susceptor comprises a susceptor shaft and a susceptor disc, wherein the susceptor disc comprises: a bearing layer for bearing a wafer; a first temperature control layer and a second temperature control layer for temperature control of the wafer, and the first temperature control layer is internally provided with a temperature control pipeline; the second temperature control layer comprises an annular guide rail, at least one set of moving assemblies and at least one heating element, the annular guide rail is fixed to the lower surface of the first temperature control layer, the moving assemblies are all slidingly connected to the annular guide rail, at least one set of the moving assemblies is connected with the heating element, the moving assemblies drive the heating element to form a temperature compensation area, and the temperature compensation area covers the upper surface of the bearing layer in orthographic projection. The second temperature control layer is configured to compensate the temperature of different areas on the upper surface of the bearing layer. The susceptor of the application can realize temperature regulation of different areas of the wafer, reduce the complexity of the temperature control structure, and realize uniform and flexible control of the wafer temperature.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor process equipment. Background Technology

[0002] In semiconductor fabrication processes (including etching and deposition processes), wafers are typically supported by a substrate. Temperature control channels are usually installed within the substrate. By heating or cooling the temperature control medium in the temperature control channels, the temperature of the wafer is regulated (including heating and cooling) to meet the temperature requirements of various processes.

[0003] In semiconductor fabrication processes, varying temperature distributions on the wafer surface can lead to different processing results, such as abnormal etching at the wafer edges. To better control wafer temperature, heaters can be placed in different areas of the substrate. Temperature regulation is achieved by inputting different power levels to these heaters. Heaters are typically fixed inside the substrate and contain multiple orderly arranged heating elements. Each heating element is connected to a power source via a power line. Adjusting the output power of the power source regulates the heat output of the corresponding heating element, thereby regulating the temperature of that area. To achieve multi-area temperature control, multiple heaters are usually placed in different areas. This heater setup involves independent control of each heating element, requiring numerous power lines, resulting in a complex heater structure, high cost, and difficulty in achieving stable temperature control. If the temperature difference between each independently controlled temperature area and adjacent heater areas is too large, heat from surrounding heater areas may be transferred to or conducted away from the target area. Therefore, multiple adjustments are needed to obtain stable heating power, slowing down the process time. In addition, this fixed-surface-mount temperature control method can create cold spots in the area between heating elements, reducing the compensation effect. It also has problems such as difficulty in replacing components and high maintenance costs.

[0004] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor process equipment, which includes a base that enables temperature regulation of different regions of the wafer, reducing the complexity of temperature control while ensuring temperature control accuracy, and achieving uniform and flexible control of the wafer temperature.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor process apparatus, comprising a process chamber and a base, the base including a base shaft and a base disk disposed inside the process chamber, one end of the base shaft supporting the base disk, and the other end of the base shaft penetrating the cavity wall of the process chamber and extending to the outside of the process chamber; the base disk comprising: A carrier layer, the upper surface of which is in contact with the wafer and is used to support the wafer; The first temperature control layer is located below the carrier layer. The upper surface of the first temperature control layer is in contact with the lower surface of the carrier layer. The first temperature control layer has a temperature control pipe inside, which is filled with a temperature control medium for wafer temperature control. A second temperature control layer is located below the first temperature control layer, with its upper surface in contact with the lower surface of the first temperature control layer. The second temperature control layer includes an annular guide rail, at least one set of moving components, and at least one heating element. The annular guide rail is fixed to the lower surface of the first temperature control layer, and the moving components are slidably connected to the annular guide rail. At least one set of the moving components is connected to the heating element, and the moving components drive the heating element to form a moving temperature compensation area. The temperature compensation area is projected onto the upper surface of the support layer, and the second temperature control layer is configured to perform temperature compensation on different areas of the upper surface of the support layer.

[0007] As an optional technical solution, the moving component includes a slider assembly that slides along an annular guide rail and a mounting plate that is fixedly connected to the slider assembly. The heating element is located on the upper surface of the mounting plate opposite to the first temperature control layer, and the heating element is in contact with the lower surface of the first temperature control layer.

[0008] As an optional technical solution, the mounting plate of the moving component extends radially along the second temperature control layer. The width of the mounting plate decreases from the edge of the second temperature control layer towards the center of the second temperature control layer. The upper surface of the mounting plate is provided with two side edges extending from the edge of the second temperature control layer towards the center of the second temperature control layer. The included angle formed by the two side edges is less than 30°. The contact area between the heating element and the lower surface of the first temperature control layer is the heating area. The heating area of ​​the heating element near the edge of the second temperature control layer is greater than its heating area near the center of the second temperature control layer.

[0009] As an optional technical solution, the mounting plate is made of heat-insulating material, the upper surface of the mounting plate is parallel to the first temperature control layer, and the mounting plate is provided with multiple independently controlled heating elements from the edge of the second temperature control layer to the center of the second temperature control layer, and the heating elements are equidistantly distributed.

[0010] As an optional technical solution, the mounting plate is provided with multiple independently controlled heating elements from the edge of the second temperature control layer toward the center of the second temperature control layer, and there is a spacing between adjacent heating elements. The spacing between the heating elements near the edge of the second temperature control layer is smaller than the spacing near the center of the second temperature control layer.

[0011] As an optional technical solution, a number of spacers are provided along the thickness direction of the second temperature control layer. The spacers are radially distributed along the second temperature control layer and are fixedly connected to the lower surface of the first temperature control layer. There are three spacers, and the three spacers are equidistantly distributed circumferentially. There are also three sets of moving components. The upper surface of the mounting plate of each set of moving components is provided with a heating element, and the moving components and spacers are alternately distributed.

[0012] As an optional technical solution, the slider assembly includes a first slider and a second slider. The first slider is slidably connected to an annular guide rail. The first slider is a metal slider, and the second slider is a magnetic slider. The second slider drives the first slider to move along the annular guide rail by magnetic force. The annular guide rail is made of a non-magnetic material.

[0013] As an optional technical solution, the second temperature control layer further includes a main shaft, the axis of which coincides with the central axis of the base shaft; one end of the mounting plate of the moving component is fixedly connected to the first slider, and the other end of the mounting plate is provided with an annular component, which is sleeved on the main shaft. The mounting plate is rotatably connected to the main shaft through the annular component, and any mounting plate can move independently under the drive of the slider assembly connected to it.

[0014] As an optional technical solution, the base disk further includes a ceramic shield, which includes an annular top wall, side walls extending downward from the outer periphery of the annular top wall, and a bottom wall extending horizontally from the bottom end of the side walls towards the center of the ceramic shield. The annular top wall of the ceramic shield covers the edge area of ​​the upper surface of the support layer, and the opening area of ​​the annular top wall is adapted to the wafer size. The side walls of the ceramic shield cover the support layer, the first temperature control layer, and the second temperature control layer along the thickness direction of the base disk. The bottom wall of the ceramic shield covers the lower surface opposite to the upper surface of the second temperature control layer.

[0015] As an optional technical solution, the annular guide rail is located within the orthographic projection area of ​​the annular top wall of the ceramic shield.

[0016] As an optional technical solution, the annular guide rail includes an annular top surface fixedly connected to the lower surface of the first temperature control layer, a side surface extending downward from the annular top surface, and an annular bottom surface extending horizontally from the center of the annular guide rail to the edge from the bottom wall of the side surface. The opening direction of the annular guide rail faces the side wall of the ceramic shield.

[0017] As an optional technical solution, the first slider includes a slider body and a connecting rod. The slider body is slidably connected to the sliding area formed by the annular top surface of the annular guide rail, the side surface of the annular guide rail, the annular bottom surface of the annular guide rail, and the side wall of the ceramic shield. A sliding gap is provided between the bottom surface of the annular guide rail and the side wall of the ceramic shield. One end of the connecting rod is fixedly connected to the slider body, and the connecting rod slides in the sliding gap under the drive of the slider body. The other end opposite to one end of the connecting rod is fixedly connected to the mounting plate.

[0018] As an optional technical solution, the annular guide rail includes an annular top surface fixedly connected to the lower surface of the first temperature control layer, a side surface extending downward from the annular top surface, and an annular bottom surface extending horizontally from the center of the annular guide rail to the edge from the bottom wall of the side surface. The annular bottom surface is fixedly connected to the side wall of the ceramic shield. The side surface of the annular guide rail is provided with an annular opening facing the main axis direction. The annular opening is parallel to and coaxially arranged with the annular guide rail. The mounting plate slides along the annular opening under the drive of the slider assembly connected to it.

[0019] As an optional technical solution, the semiconductor process equipment further includes a ejector mechanism located below the second temperature control layer. The ejector mechanism includes an ejector shaft and an ejector plate disposed within the process chamber. The ejector plate is provided with multiple ejectors. One end of the ejector shaft is supported on the bottom of the ejector plate, and the other end of the ejector shaft extends through the bottom wall of the process chamber to the outside of the process chamber. One end of each of the multiple ejectors is fixed to the ejector plate, and the other end extends along the thickness direction of the base plate. A plurality of first pin holes are provided along the thickness direction of the bearing layer, and a plurality of second pin holes are provided correspondingly along the thickness direction of the first temperature control layer. The first pin holes and the second pin holes are connected. A plurality of spacers are located directly below the second pin holes, and a plurality of third pin holes are provided corresponding to the first pin holes along the thickness direction of the spacers.

[0020] Compared with the prior art, the present invention has the following beneficial effects: 1. This invention provides a semiconductor process apparatus, comprising a base, the base including a first temperature control layer and a second temperature control layer. The first temperature control layer is used to establish and maintain the basic target temperature required for wafer processing. The second temperature control layer, through the arrangement of a ring-shaped guide rail, a moving component, and a heating element, achieves temperature adjustment for different areas of the wafer, thereby realizing temperature control of different areas of the wafer and avoiding problems such as abnormal edge etching or edge deviation caused by uneven temperature distribution. Compared with the prior art, this invention adopts a mobile temperature control adjustment, which provides high flexibility in temperature adjustment, significantly reduces power lines, has a simple structure, and is easy to maintain. The temperature control adjustment of this invention is mobile; the heating element can be moved to the area requiring temperature compensation as needed, so temperature compensation can be achieved in each area. Compared with fixed heating elements, there are no dead zones that cannot be compensated. In addition, this invention greatly reduces the number of power lines, making maintenance convenient.

[0021] 2. The second temperature control layer of this invention optimizes the uneven film thickness between the wafer's central and edge regions by optimizing the position and heating area of ​​the heating elements. It limits the heating area of ​​the heating elements corresponding to the wafer edge to different from that corresponding to the wafer center, with the edge heating elements having a larger heating area than the center heating elements. Furthermore, multiple heating elements on the moving components are equidistantly or unequally spaced, enabling multi-dimensional temperature regulation of the wafer's radial direction. By setting multiple moving components, each equipped with a heating element, and each moving component being independently driven, the heating elements can be moved by driving the moving components, thus achieving circumferential and radial temperature regulation of the wafer.

[0022] 3. The second temperature control layer of the present invention is provided with a moving assembly for adjusting the heating element. The moving assembly includes a slider assembly that slides along an annular guide rail and a mounting plate fixedly connected to the slider assembly. The present invention provides a slider assembly for driving the mounting plate. The slider assembly includes a first slider and a second slider. The first slider is slidably connected to the annular guide rail and is a metal slider. The second slider is not fixedly mounted to the base plate. Only when the position of the mounting plate needs to be adjusted, the second slider magnetically attracts the first slider, thereby driving the first slider to move along the annular guide rail. The annular guide rail, moving assembly, and heating element of the present invention can be located inside the base plate, avoiding corrosion of the mobile temperature control device by semiconductor process gases and improving its service life.

[0023] 4. The base disk of the present invention further includes a ceramic shield, the ceramic shield comprising an annular top wall, side walls extending downward from the periphery of the annular top wall, and a bottom wall extending horizontally from the bottom end of the side walls towards the center of the ceramic shield; the annular top wall of the ceramic shield covers the edge region of the upper surface of the support layer, and the opening region of the annular top wall is adapted to the wafer size; the side walls of the ceramic shield cover the support layer, the first temperature control layer, and the second temperature control layer along the thickness direction of the base disk; the bottom wall of the ceramic shield covers the lower surface opposite to the upper surface of the second temperature control layer. The ceramic shield is used to protect the support layer, the first temperature control layer, and the second temperature control layer from corrosion by semiconductor process gases and damage by process byproducts. Attached Figure Description

[0024] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort: Figure 1 This is a schematic diagram of the semiconductor process equipment of the present invention; Figure 2 This is a schematic diagram of the structure of the base of the present invention; Figure 3 This is a top view of the second temperature control layer of the base of the present invention; Figure 4 This is a schematic diagram of the structure of the moving component of the present invention; Figure 5 This is a schematic diagram of the structure of a moving component according to another embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of a ring-shaped guide rail according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the structure of a ring-shaped guide rail according to another embodiment of the present invention; Figure 8 This is a graph showing the amount of etching on the wafer surface.

[0025] Explanation of reference numerals in the attached figures: 101. First air inlet pipe; 102. Second air inlet pipe; 103. Remote plasma generator; 104. First diffuser plate; 105. Spray device; 107. Process chamber; 109. Base; 110. Temperature control pipe; 111. Base shaft; 201. Bearing layer; 202. First temperature control layer; 203. Second temperature control layer; 204. Ceramic shield; 2041. Annular top wall; 2042. Side wall; 2043. Bottom wall; 301, Annular guide rail; 3011, Annular top surface; 3012, Side surface; 3013, Annular bottom surface; 302, Moving assembly; 303, Heating element; 304, Slider assembly; 3041, First slider; 3042, Second slider; 305, Mounting plate; 3051, Mounting plate of the first set of moving assemblies; 3052, Mounting plate of the second set of moving assemblies; 3053, Mounting plate of the third set of moving assemblies; 306, Spacer; 307, Annular component; 3071, First annular component; 3072, Second annular component; 3073, Third annular component. Detailed Implementation

[0026] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0027] This invention provides a semiconductor process equipment, which includes, but is not limited to, etching equipment and deposition equipment. This invention will be described using a semiconductor pre-cleaning equipment as an example.

[0028] Figure 1 This diagram illustrates the structure of a semiconductor pre-cleaning device provided by the present invention, which is used for pre-cleaning processes on wafer surfaces in the semiconductor field. The semiconductor pre-cleaning device includes a process chamber 107, a base 109, and a remote plasma generator 103. The process chamber 107 provides a wafer processing space for pre-cleaning and residue removal processes on the wafer surface within the process chamber 107. The remote plasma generator 103 is located at the top of the process chamber. A first process gas enters the remote plasma generator 103 through a first inlet pipe 101, is excited to generate plasma, and then enters a spray device 105 through a first diffuser plate 104, uniformly entering the interior of the process chamber 107 through the spray device 105. A second process gas enters the spray device 105 through a second inlet pipe 102, and then uniformly enters the interior of the process chamber 107 through the spray device 105.

[0029] like Figure 1 and Figure 2 As shown, the semiconductor pre-cleaning equipment also includes a base 109, which includes a base shaft 111 and a base disk disposed inside the process chamber. One end of the base shaft 111 supports the base disk, and the other end of the base shaft 111 passes through the cavity wall of the process chamber and extends to the outside of the process chamber 107.

[0030] The base disk includes: a support layer 201, the upper surface of which contacts the wafer for supporting the wafer; a first temperature control layer 202, located below the support layer 201, the upper surface of which contacts the lower surface of the support layer 201, the first temperature control layer 202 having a temperature control pipe 110 inside, the temperature control pipe 110 being filled with a temperature control medium for wafer temperature control, the temperature control medium being able to heat or cool the support layer 201 as needed, thereby heating or cooling the wafer; and a second temperature control layer 203, located below the first temperature control layer 202, the upper surface of which contacts the lower surface of the first temperature control layer 201. 02. The upper surfaces of the first temperature control layer 202 are in contact with the lower surfaces of the first temperature control layer 202. The second temperature control layer 203 includes an annular guide rail 301, at least one set of moving components 302, and at least one heating element 303. The annular guide rail 301 is fixed to the lower surface of the first temperature control layer 202. The moving components 302 are all slidably connected to the annular guide rail 301. At least one set of the moving components 302 is connected to the heating element 303. The moving components 302 drive the heating element 303 to form a temperature compensation area. The temperature compensation area is projected onto the upper surface of the support layer 201. The second temperature control layer 203 is configured to compensate for the temperature of different areas on the upper surface of the support layer 201. That is, the first temperature control layer 202 is configured as the main temperature control layer, used to provide the main heating or cooling power to achieve initial temperature stabilization within the target temperature range; the second temperature control layer 203 is configured as the auxiliary temperature control layer, used to finely adjust the temperature difference in local areas of the first temperature control layer 202.

[0031] The base disk also includes a ceramic shield 204, which includes an annular top wall 2041, side walls 2042 extending downward from the outer periphery of the annular top wall, and a bottom wall 2043 extending horizontally from the bottom end of the side walls towards the center of the ceramic shield. The annular top wall 2041 of the ceramic shield 204 covers the edge region of the upper surface of the support layer 201, and the opening region of the annular top wall 2041 is adapted to the wafer size. The side walls 2042 of the ceramic shield cover the support layer 201, the first temperature control layer 202, and the second temperature control layer 203 along the thickness direction of the base disk. The bottom wall 2043 of the ceramic shield covers the lower surface opposite to the upper surface of the second temperature control layer 203. The ceramic shield 204 is used to protect the support layer 201, the first temperature control layer 202, and the second temperature control layer 203 from corrosion by semiconductor process gases and damage by process byproducts. To improve the temperature control of the wafer, the annular guide rail 301 is positioned within the orthographic projection area of ​​the annular top wall 2041 of the ceramic shield. Furthermore, the orthographic projection of the area formed by the movement of the mounting plate 305 completely covers the orthographic projection of the wafer on the support layer 201; that is, the temperature compensation area is equal to or slightly larger than the opening of the annular top wall 2041 of the ceramic shield, thus achieving sufficient temperature compensation for all areas of the wafer and enabling good temperature control at the wafer edges. In addition, the design of the ceramic shield 204 reduces the use of sealing rings, thereby reducing the frequency of base maintenance due to sealing ring aging.

[0032] Figure 3 A top view of the second temperature control layer of the base of the present invention is shown. For ease of understanding, the annular top surface 3011 and annular bottom surface 3013 of the annular guide rail 301 are not shown. The second temperature control layer 203 includes the annular guide rail 301, at least one set of moving components 302, and at least one heating element 303. The annular guide rail is disposed at the edge of the second temperature control layer 203. The moving component 302 includes a slider assembly 304 that slides along the annular guide rail and a mounting plate 305 fixedly connected to the slider assembly. The heating element 303 is located on the upper surface of the mounting plate 305 opposite to the first temperature control layer 202, and the heating element 303 is in contact with the lower surface of the first temperature control layer 202. The direct contact between the heating element 303 and the lower surface of the first temperature control layer 202 facilitates heat conduction and enables temperature control of different regions of the wafer.

[0033] Furthermore, the mounting plate 305 is a hollow structure, and the wiring of the heating element 303 is located inside the mounting plate 305. One end of the mounting plate 305 is connected to the spindle via an annular member 307, and the spindle also has wiring for connecting the heating element 303 inside.

[0034] The mounting plate 305 of the moving component 302 extends radially along the annular guide rail. The width of the mounting plate 305 decreases from the edge of the second temperature control layer 203 towards its center. The upper surface of the mounting plate 305 has two sides extending from the edge of the second temperature control layer 203 towards its center, with an included angle α less than 30°. The contact area between the heating element 303 and the lower surface of the first temperature control layer 202 is the heating area. The heating area of ​​the heating element 303 near the edge of the second temperature control layer 203 is larger than the heating area near the center of the second temperature control layer 203. For example... Figure 8 The image shows the etching amount on the wafer surface after processing by a semiconductor pre-cleaning device. As shown in Figure 8, there are obvious etching anomalies at the notch location in the negative Y-axis direction. The etching amount near the notch location is significantly different from other locations. Multiple adjustments to process parameters have failed to resolve the etching anomaly. Using the base provided in this application, the area requiring temperature compensation is determined based on the etching pattern. The heating element 303 in this area is moved, ensuring that the heating area of ​​the heating element 303 near the edge of the second temperature control layer 203 is larger than the heating area near the center of the second temperature control layer 203. By performing local temperature control at the wafer notch location, the aforementioned problem can be significantly improved. The shape and structure of the mounting plate 305 of the moving component can be designed according to the temperature adjustment range, such as a long strip, triangle, or tree branch shape, etc., without affecting the effectiveness and purpose achieved by this invention, and should still fall within the scope of the technical content disclosed in this invention.

[0035] Heating element 303 is disposed on the upper surface of mounting plate 305. To avoid heat transfer between different heating elements, the mounting plate is made of heat-insulating material. Furthermore, the thermal conductivity of the mounting plate is less than 5 W / (m·K). The upper surface of the mounting plate 305 opposite to the first temperature control layer 202 is parallel to the first temperature control layer 202. The heating element 303 can protrude from the upper surface of the mounting plate 305 and directly contact the first temperature control layer 202, or the heating element 303 can be embedded in the mounting plate 305. The upper surface of the heating element 303 is coplanar with the upper surface of the mounting plate 305. Multiple independently controlled heating elements 303 are provided on the mounting plate 305 from the annular guide rail 301 towards the center of the second temperature control layer 203. The heating elements 303 are equidistantly distributed. The number of heating elements 303 on each mounting plate 305 is 3 to 5, and the number of heating elements 303 on each mounting plate 305 can be increased or decreased according to the needs of temperature adjustment. The heat source on each mounting plate 305 can be adjusted independently. The shape of the heating element 303 can also be selected as needed, such as the heating element 303 can be round, square, etc.

[0036] like Figure 8 As shown, since the etching amounts differ between the wafer edge and center regions, the etching amount can be adjusted by varying the temperatures of the edge and center regions of the second temperature control layer. This is achieved by setting the spacing between the heating elements 303 on the mounting plate 305 near the edge of the second temperature control layer 203 to be smaller than the spacing near the center of the second temperature control layer 203; and by setting the heating area of ​​the heating elements 303 near the edge of the second temperature control layer 203 to be larger than the heating area near the center of the second temperature control layer 203. This allows the temperature of the wafer edge region to be higher than the temperature of the wafer center region by adjusting the heating elements 303 of the second temperature control layer 203. Since the temperature of the heating elements 303 in the second temperature control layer 203 must pass through the first temperature control layer 202 to be conducted to the wafer surface, temperature compensation in certain areas can be achieved by adjusting the heating power of the local heating elements 303.

[0037] like Figure 5 As shown, to further avoid the formation of heating dead zones, the heating elements 303 can also be designed with a seamless distribution. That is, the shape of the heating elements 303 can be determined according to the shape of the mounting plate 305. The shape and size of each heating element 303 are adapted to the mounting plate 305. Adjacent heating elements 303 are seamlessly connected, or a heat insulation strip is provided between adjacent heating elements 303. Since the heating elements 303 can be controlled independently, the heat insulation strip can prevent heat conduction between adjacent heating elements 303 due to excessive temperature differences. For example, such as... Figure 5 As shown, when the top view of the mounting plate 305 is approximately triangular, the heating element 303 can be designed as a trapezoid. Along the direction from the center to the edge of the second temperature control layer 203, the area of ​​the heating element 303 can gradually increase, or the area can remain constant. The choice of the shape and area of ​​the heating element 303 can be determined according to actual adjustment requirements. Furthermore, to increase the area for temperature adjustment, the edge of the heating element 303 can coincide with the edge of the mounting plate 305, or the size of the heating element 303 can be larger than the size of the mounting plate 305. The shape of the heating element can be designed according to actual temperature adjustment needs, and this application is not limited thereto.

[0038] Furthermore, a plurality of spacers 306 are provided along the thickness direction of the second temperature control layer 203. The spacers 306 are radially distributed along the second temperature control layer. One end of each spacer 306 can be fixedly connected to the annular guide rail 301, and the spacers 306 can also be fixedly installed on the lower surface of the first temperature control layer 202. There are three spacers 306, and the three spacers 306 are equidistantly distributed circumferentially. Multiple spacers 306 can also be provided as needed, and this application is not limited thereto. There are also three sets of moving components 302. The upper surface of the mounting plate of each set of moving components 302 is provided with a heating element 303. The moving components 302 and the spacers 306 are alternately distributed. Each set of moving components 302 can be adjusted in position between two adjacent spacers 306. In order to ensure a sufficient temperature adjustment range, the spacers 306, while ensuring sufficient support, minimize the contact area with the lower surface of the first temperature control layer 202. The spacer 306 can be elongated, and the width of the spacer 306 can decrease from the annular guide rail 301 toward the center of the second temperature control layer 203. The spacer 306 can also be other shapes, and this application is not limited thereto.

[0039] The second temperature control layer 203 also includes a main shaft, the axis of which coincides with the central axis of the base shaft 111; one end of the mounting plate 305 of the moving assembly 302 is fixedly connected to the first slider 3041, and the other end of the mounting plate 305 is provided with an annular member 307, which is sleeved on the main shaft. The mounting plate 305 is rotatably connected to the main shaft through the annular member 307, and either mounting plate 305 can move independently under the drive of the slider assembly 304 connected to it.

[0040] Figure 4A schematic diagram of the moving component of the present invention is shown. The illustration uses three groups of moving components 302 as an example; the number of moving components 302 can be determined as needed, and the present invention is not limited thereto. The mounting plate of the first group of moving components is 3051, the mounting plate of the second group of moving components is 3052, and the mounting plate of the third group of moving components is 3053. One end of the mounting plate of each group of moving components is fixedly connected to the first slider 3041, and the other end of the mounting plate 305 is provided with an annular component 307. The first set of moving components has a mounting plate connected to a first annular component 3071, the thickness of which is one-third of the thickness of the mounting plate, and the upper surface of the first annular component 3071 is coplanar with the upper surface of the mounting plate 305. The third set of moving components has a mounting plate 3053 connected to a third annular component 3073, the thickness of which is one-third of the thickness of the mounting plate 305, and the lower surface of the third annular component 3073 is coplanar with the lower surface of the mounting plate 305. The second set of moving components has a mounting plate 3052 connected to a second annular component 3072, the thickness of which is one-third of the thickness of the mounting plate 305, and the second annular component 3072 is located between the first annular component 3071 and the third annular component 3073. One end of each of the three sets of moving components is rotatably connected to a main shaft, but they can be driven independently. The independent driving structure of the moving components is not limited to this; all such structures should fall within the scope of the technical content disclosed in this invention, provided they do not affect the effectiveness and objectives achieved by the invention.

[0041] The adjustment method of the semiconductor process equipment base in this application is as follows: First, the etching (deposition) abnormal area is determined according to the etching (deposition) pattern on the wafer surface; second, the cavity is opened, and one or more mounting plates 305 that need to be moved are determined according to the abnormal area. One end of the mounting plate 305 is fixedly connected to the first slider 3041. The first slider 3041 is attracted by the magnetic attraction of the second slider 3042, thereby driving the first slider 3041 to move along the annular guide rail 301 (the specific moving steps are detailed below). Under the drive of the slider assembly, the heating element 303 is moved to the area that needs temperature compensation; finally, the cavity is closed, the process is performed, and the heating power of the heating element 303 in the corresponding area is adjusted to perform local temperature compensation in the corresponding area.

[0042] The slider assembly 304 includes a first slider 3041 and a second slider 3042. The first slider 3041 is slidably connected to an annular guide rail. The first slider 3041 is a metal slider, and the second slider 3042 is a magnetic slider. The second slider 3042 drives the first slider 3041 to move along the annular guide rail, which is made of a non-magnetic material, via magnetic force. The first slider 3041 is located inside the ceramic shield 204. The second slider 3042 is not connected to the base. It is only used when the position of the mounting plate (heating element) needs to be adjusted. The second slider 3042 magnetically attracts the first slider 3041, thereby moving the first slider 3041 along the annular guide rail. After adjustment, the second slider 3042 is removed and stored separately. Therefore, provided that the ceramic shield 204 has sufficient strength, it can protect the base plate bearing layer, the first temperature control layer, and the second temperature control layer. The thickness of the sidewall of the ceramic shield should be reduced to provide a structural basis for the drive of the slider assembly. To better determine the position of the first slider 3041, a position mark is provided on the outer surface of the side wall of the ceramic shield that is opposite to the inside of the ceramic shield. The position mark corresponds to the position of the annular guide rail, which makes it easy for the second slider to quickly determine the position of the first slider. That is, since the ceramic shield has a certain thickness, the horizontal position of the first slider can be determined as soon as possible through the position mark.

[0043] like Figure 6As shown, to make the magnetic attraction effect of the first slider 3041 and the second slider 3042 more stable, the annular guide rail includes an annular top surface 3011 fixedly connected to the lower surface of the first temperature control layer 202, a side surface 3012 extending downward from the inner edge of the annular top surface, and an annular bottom surface 3013 extending horizontally from the center of the annular guide rail to the edge from the bottom wall of the side surface. The opening direction of the annular guide rail faces the side wall 2042 of the ceramic shield. The first slider 3041 includes a slider body and a connecting rod. The slider body is slidably connected to the sliding area formed by the annular top surface 3011, the side surface 3012, the annular bottom surface 3013 of the annular guide rail, and the side wall 2042 of the ceramic shield. A sliding gap is provided between the annular bottom surface 3013 of the annular guide rail and the side wall 2042 of the ceramic shield. One end of the connecting rod is fixedly connected to the slider body. The connecting rod slides in the sliding gap under the drive of the slider body. The other end opposite to one end of the connecting rod is fixedly connected to the mounting plate 305. The design of the annular guide rail ensures that only the sidewall 2042 of the ceramic shield separates the first slider 3041 and the second slider 3042, significantly reducing the instability of magnetic attraction caused by excessive distance between them. The magnetic attraction position of the second slider 3042 is located outside the sidewall of the ceramic shield. The position of the first slider 3041 is determined by the sidewall 2042 of the ceramic shield, allowing for adjustment of its position. This design prevents interference between the moving components and other structures within the process chamber. Furthermore, the aforementioned annular guide rail structure effectively prevents the first slider 3041 from sliding due to the removal of the second slider or vibration of the base during the process. The sliding range of the first slider 3041 is formed by the four surfaces of the annular guide rail: the annular top surface 3011, the annular side surface 3012, the annular bottom surface 3013, and the ceramic shield sidewall 2042. The four surfaces of the first slider 3041 are in contact with the surfaces that constitute the sliding range. Therefore, the friction between them can effectively prevent the first slider from sliding, and in particular, the first slider 3041 will not experience radial displacement.

[0044] Furthermore, such as Figure 7As shown, another annular guide rail structure design is also provided. The annular guide rail includes an annular top surface 3011 fixedly connected to the lower surface of the first temperature control layer, a side surface 3012 extending downward from the inner edge of the annular top surface, and an annular bottom surface 3013 extending horizontally from the center of the annular guide rail to the edge from the bottom wall of the side surface. The annular bottom surface 3013 is fixedly connected to the side wall of the ceramic shield 204. The side surface 3012 of the annular guide rail has an annular opening facing the main shaft direction. The annular opening is parallel to and coaxial with the annular guide rail. The mounting plate slides along the annular opening under the drive of the slider assembly connected to it. The annular guide rail is simple to assemble, and the annular opening plays a good role in longitudinal limiting. A gap is provided between the first slider and the side surface 3012 to avoid the first slider 3041 from getting stuck and unable to move due to the high temperature expansion of each layer of the base plate.

[0045] Furthermore, depending on the temperature control zone, the annular guide rail can be located on the lower surface of the first temperature control layer 202. The annular guide rail is concentrically arranged with the first temperature control layer 202, and the diameter of the annular guide rail is half the diameter of the first temperature control layer 202. All moving components are slidably connected to the annular guide rail. Each moving component includes a slider assembly that slides along the annular guide rail and a mounting plate fixedly connected to the slider assembly. The center of the mounting plate 305 is fixedly connected to the slider assembly 304. One end of the mounting plate 305 extends towards the center of the second temperature control layer 203, and the other end extends towards the edge of the second temperature control layer. At this time, the magnetic attraction position of the second slider 3042 is set on the bottom wall 2043 of the ceramic shield. The position of the first slider 3041 is determined by the bottom wall 2043 of the ceramic shield, thereby adjusting the position of the first slider 3041. Similarly, the annular guide rail can also be set in other positions as needed.

[0046] Furthermore, the semiconductor process equipment also includes a ejector pin mechanism located below the second temperature control layer. The ejector pin mechanism includes an ejector pin shaft and an ejector pin disk disposed within the process chamber. The ejector pin disk is provided with multiple ejector pins. One end of the ejector pin shaft is supported on the bottom of the ejector pin disk, and the other end of the ejector pin shaft extends through the bottom wall of the chamber to the outside of the chamber. One end of each of the multiple ejector pins is fixed to the ejector pin disk, and the other end extends along the thickness direction of the base disk. A plurality of first ejector pin holes are provided along the thickness direction of the supporting layer, and a plurality of second ejector pin holes are correspondingly provided along the thickness direction of the first temperature control layer. The first ejector pin holes and the second ejector pin holes are connected. A plurality of spacers 306 are provided along the thickness direction of the second temperature control layer, and the spacers are located directly below the second ejector pin holes. A plurality of third ejector pin holes are provided along the thickness direction of the spacers, corresponding to the first ejector pin holes. The third ejector pin holes formed by the spacers, the second ejector pin holes formed by the first temperature control layer, and the first ejector pin holes formed by the supporting layer all play a good guiding role in the up and down movement of the ejector pins.

[0047] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the term "connection" in this document indicates a direct connection between A and B, or an indirect connection between A and B, such as an indirect connection between A and B via C, or even via C and D, or more components. The connection between A and B can be integral or separate, detachable or fixed. The term "optional" in this document indicates that the technical feature can be combined with or not combined with any feature in the document.

[0048] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor process apparatus, characterized in that, include: Process chambers; The base includes a base shaft and a base disk disposed inside the process chamber. One end of the base shaft supports the base disk, and the other end of the base shaft passes through the cavity wall of the process chamber and extends to the outside of the process chamber. The base disk includes: A carrier layer, the upper surface of which is in contact with the wafer and is used to support the wafer; The first temperature control layer is located below the carrier layer. The upper surface of the first temperature control layer is in contact with the lower surface of the carrier layer. The first temperature control layer has a temperature control pipe inside, which is filled with a temperature control medium for wafer temperature control. A second temperature control layer is located below the first temperature control layer, with its upper surface in contact with the lower surface of the first temperature control layer. The second temperature control layer includes an annular guide rail, at least one set of moving components, and at least one heating element. The annular guide rail is fixed to the lower surface of the first temperature control layer, and the moving components are all slidably connected to the annular guide rail. At least one set of the moving components is connected to the heating element, and the moving components drive the heating element to form a moving temperature compensation area. The temperature compensation area is projected onto the upper surface of the support layer, and the second temperature control layer is configured to perform temperature compensation on different areas of the upper surface of the support layer.

2. The semiconductor process equipment according to claim 1, characterized in that, The moving component includes a slider assembly that slides along an annular guide rail and a mounting plate that is fixedly connected to the slider assembly. The heating element is located on the upper surface of the mounting plate opposite to the first temperature control layer, and the heating element is in contact with the lower surface of the first temperature control layer.

3. The semiconductor process equipment according to claim 2, characterized in that, The mounting plate of the movable component extends radially along the second temperature control layer. The width of the mounting plate decreases from the edge of the second temperature control layer towards the center of the second temperature control layer. The upper surface of the mounting plate is provided with two side edges extending from the edge of the second temperature control layer towards the center of the second temperature control layer. The included angle formed by the two side edges is less than 30°. The contact area between the heating element and the lower surface of the first temperature control layer is the heating area. The heating area of ​​the heating element near the edge of the second temperature control layer is larger than its heating area near the center of the second temperature control layer.

4. A semiconductor process apparatus according to claim 3, characterized in that, The mounting plate is made of heat-insulating material. The upper surface of the mounting plate is parallel to the first temperature control layer. The mounting plate has multiple independently controlled heating elements from the edge of the second temperature control layer toward the center of the second temperature control layer. The heating elements are evenly distributed.

5. A semiconductor process apparatus according to claim 3, characterized in that, The mounting plate has multiple independently controlled heating elements from the edge of the second temperature control layer toward the center of the second temperature control layer. There is a spacing between adjacent heating elements, and the spacing between the heating elements near the edge of the second temperature control layer is smaller than the spacing near the center of the second temperature control layer.

6. A semiconductor process apparatus according to claim 4 or 5, characterized in that, Several spacers are provided along the thickness direction of the second temperature control layer. The spacers are radially distributed along the second temperature control layer and are fixedly connected to the lower surface of the first temperature control layer. There are three spacers, and the three spacers are equidistant from each other in the circumference. There are also three sets of moving components. The upper surface of the mounting plate of each set of moving components is provided with a heating element. The moving components and spacers are distributed alternately.

7. A semiconductor process apparatus according to claim 6, characterized in that, The slider assembly includes a first slider and a second slider. The first slider is slidably connected to an annular guide rail. The first slider is a metal slider, and the second slider is a magnetic slider. The second slider drives the first slider to move along the annular guide rail by magnetic force. The annular guide rail is made of a non-magnetic material.

8. A semiconductor process apparatus according to claim 7, characterized in that, The second temperature control layer also includes a main shaft, the axis of which coincides with the central axis of the base shaft; one end of the mounting plate of the moving component is fixedly connected to the first slider, and the other end of the mounting plate is provided with an annular component, which is sleeved on the main shaft. The mounting plate is rotatably connected to the main shaft through the annular component, and either mounting plate moves independently under the drive of the slider assembly connected to it.

9. A semiconductor process apparatus according to claim 8, characterized in that, The base disk also includes a ceramic shield, which includes an annular top wall, side walls extending downward from the outer periphery of the annular top wall, and a bottom wall extending horizontally from the bottom end of the side walls towards the center of the ceramic shield. The annular top wall of the ceramic shield covers the edge area of ​​the upper surface of the support layer, and the opening area of ​​the annular top wall is adapted to the wafer size. The side walls of the ceramic shield cover the support layer, the first temperature control layer, and the second temperature control layer along the thickness direction of the base disk. The bottom wall of the ceramic shield covers the lower surface opposite to the upper surface of the second temperature control layer.

10. A semiconductor process apparatus according to claim 9, characterized in that, The annular guide rail is located within the orthographic projection area of ​​the annular top wall of the ceramic shield.

11. A semiconductor process apparatus according to claim 10, characterized in that, The annular guide rail includes an annular top surface fixedly connected to the lower surface of the first temperature control layer, a side surface extending downward from the annular top surface, and an annular bottom surface extending horizontally from the bottom end of the side surface from the center of the annular guide rail to the edge. The opening direction of the annular guide rail faces the side wall of the ceramic shield.

12. A semiconductor process apparatus according to claim 11, characterized in that, The first slider includes a slider body and a connecting rod. The slider body is slidably connected to the sliding area formed by the annular top surface of the annular guide rail, the side surface of the annular guide rail, the annular bottom surface of the annular guide rail, and the side wall of the ceramic shield. A sliding gap is provided between the bottom surface of the annular guide rail and the side wall of the ceramic shield. One end of the connecting rod is fixedly connected to the slider body. The connecting rod slides in the sliding gap under the drive of the slider body. The other end opposite to one end of the connecting rod is fixedly connected to the mounting plate.

13. A semiconductor process apparatus according to claim 10, characterized in that, The annular guide rail includes an annular top surface fixedly connected to the lower surface of the first temperature control layer, a side surface extending downward from the annular top surface, and an annular bottom surface extending horizontally from the center of the annular guide rail to the edge from the bottom wall of the side surface. The annular bottom surface is fixedly connected to the side wall of the ceramic shield. The side of the annular guide rail is provided with an annular opening facing the main axis direction. The annular opening is parallel to and coaxially arranged with the annular guide rail. The mounting plate slides along the annular opening under the drive of the slider assembly connected to it.

14. A semiconductor process apparatus according to claim 13, characterized in that, The semiconductor process equipment also includes a ejector mechanism located below the second temperature control layer. The ejector mechanism includes an ejector shaft and an ejector plate disposed within the process chamber. The ejector plate is provided with multiple ejectors. One end of the ejector shaft is supported on the bottom of the ejector plate, and the other end of the ejector shaft extends through the bottom wall of the process chamber to the outside of the process chamber. One end of each ejector pin is fixed to the ejector plate, and the other end extends along the thickness direction of the base plate. A plurality of first pin holes are provided along the thickness direction of the bearing layer, and a plurality of second pin holes are provided correspondingly along the thickness direction of the first temperature control layer. The first pin holes and the second pin holes are connected. A plurality of spacers are located directly below the second pin holes, and a plurality of third pin holes are provided corresponding to the first pin holes along the thickness direction of the spacers.

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