high frequency module

Abstract

A high-frequency module is provided in which connection between a shield conductor connected to a shield layer and a substrate is reinforced. The high-frequency module includes: a module substrate having a main surface (811) disposed at one end in a thickness direction and a main surface (812) disposed at an end on the opposite side from the main surface (811) in the thickness direction; a power amplifier (10) and a reception filter (6R) disposed on the main surface (811); a shield layer disposed on the main surface (811) so as to overlap at least a portion of the module substrate when viewed in the thickness direction; and a shield conductor disposed between the power amplifier (10) and the reception filter (6R) when viewed in the thickness direction, extending in the thickness direction, and connected at one end to the shield layer. The module substrate has a housing portion extending in the thickness direction from the main surface (811) toward the main surface (812), and a portion of the shield conductor is disposed in the housing portion.

Description

Technical Field

[0001] This disclosure relates to high-frequency modules. Background Technology

[0002] Patent Document 1 discloses a high-frequency module having a shielding layer and a shielding conductor connected to a substrate. In this high-frequency module, a shielding layer is disposed between electronic components disposed on the module substrate to suppress electromagnetic interference generated between the electronic components.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2024 / 099380 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The high-frequency module in Patent Document 1 has room for improvement in terms of strengthening the connection between the shielding conductor and the substrate.

[0008] The purpose of this disclosure is to provide a high-frequency module that enhances the connection between the shielding conductor connected to the shielding layer and the substrate.

[0009] Solution for solving the problem

[0010] The high-frequency module of the first embodiment of this disclosure has:

[0011] A substrate having a first main surface disposed at one end in the thickness direction and a second main surface disposed at the end opposite to the first main surface in the thickness direction;

[0012] A first electronic component and a second electronic component are disposed on the first main surface;

[0013] A shielding layer disposed on the first main surface in such a manner that it overlaps at least a portion of the substrate when viewed along the thickness direction; and

[0014] A shielding conductor, disposed between the first electronic component and the second electronic component when viewed along the thickness direction, the shielding conductor extending along the thickness direction, one end of the shielding conductor being connected to the shielding layer.

[0015] The substrate has a receiving portion extending along the thickness direction from the first main surface toward the second main surface.

[0016] A portion of the shielding conductor is disposed within the housing.

[0017] The effects of the invention

[0018] According to this disclosure, a high-frequency module that enhances the connection between the shielding conductor connected to the shielding layer and the substrate can be provided. Attached Figure Description

[0019] Figure 1 This is a circuit diagram showing a communication device equipped with a high-frequency module according to the first embodiment of the present disclosure.

[0020] Figure 2 It means Figure 1 A top view of the high-frequency module.

[0021] Figure 3 It is along Figure 2 A cross-sectional view of line II.

[0022] Figure 4 This is a cross-sectional view showing the high-frequency module of the second embodiment of this disclosure.

[0023] Figure 5 This is a first top view showing the high-frequency module of the third embodiment of this disclosure.

[0024] Figure 6 It means Figure 5 The second top view of the high-frequency module.

[0025] Figure 7 It is along Figure 5 A cross-sectional view of line II-II. Detailed Implementation

[0026] The various methods of this disclosure are described.

[0027] The high-frequency module of the first embodiment of this disclosure has:

[0028] A substrate having a first main surface disposed at one end in the thickness direction and a second main surface disposed at the end opposite to the first main surface in the thickness direction;

[0029] A first electronic component and a second electronic component are disposed on the first main surface;

[0030] A shielding layer disposed on the first main surface in such a manner that it overlaps at least a portion of the substrate when viewed along the thickness direction; and

[0031] A shielding conductor, disposed between the first electronic component and the second electronic component when viewed along the thickness direction, the shielding conductor extending along the thickness direction, one end of the shielding conductor being connected to the shielding layer.

[0032] The substrate has a receiving portion extending along the thickness direction from the first main surface toward the second main surface.

[0033] A portion of the shielding conductor is disposed within the housing.

[0034] The high-frequency module of the second embodiment disclosed herein is, in the high-frequency module of the first embodiment,

[0035] It comprises a first resin component covering the first main surface, the first electronic component, the second electronic component, and the shielding conductor.

[0036] The shielding layer is disposed on the surface of the first resin component.

[0037] The third-party high-frequency module disclosed herein is, in the high-frequency module of the first embodiment,

[0038] It has a ground layer disposed inside the substrate.

[0039] The shielding conductor is connected to the ground within the containment section.

[0040] The high-frequency module of the fourth method disclosed herein is, in any of the high-frequency modules of the first to third methods,

[0041] The substrate has transmit signal lines and receive signal lines disposed inside the substrate.

[0042] A portion of the shielding conductor is disposed between the transmitting signal line and the receiving signal line.

[0043] The high-frequency module of the fifth method disclosed herein is, in any of the high-frequency modules of the first to third methods,

[0044] The receiving section extends from the first main surface to the second main surface.

[0045] The shielding conductor extends through the substrate in the thickness direction.

[0046] The high-frequency module of the sixth method disclosed herein is, in any of the high-frequency modules of the first to third methods,

[0047] It has signal lines disposed inside the substrate.

[0048] When viewed along the thickness direction, the shielding conductor overlaps with at least a portion of the signal line.

[0049] The high-frequency module of the seventh method disclosed herein is, in addition to the high-frequency module of the fifth method, equipped with:

[0050] A second resin component, disposed on the second main surface; and

[0051] External connection terminals are disposed on the second resin component.

[0052] The shielding conductor is connected to the external connection terminal.

[0053] The various aspects of this disclosure will now be described with reference to the accompanying drawings. The following description is merely illustrative and does not limit the applicability or purpose of this disclosure. The drawings are schematic, and the scale and proportions of the illustrated structures and embodiments may sometimes differ.

[0054] (First Implementation)

[0055] use Figure 1 The high-frequency module 1 according to the first embodiment of this disclosure will be described.

[0056] Communication device 5 is a device used in a communication system, such as a portable terminal like a smartphone. Figure 1 As shown, the communication device 5 includes a high-frequency module 1, an antenna 2, a high-frequency signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0057] like Figure 2 As shown, the high-frequency module 1 includes a module substrate 81, a first electronic component, a second electronic component, a shielding layer 83, and a shielding conductor 91. In this configuration, the high-frequency module 1 is positioned between the antenna 2 and the RFIC 3 for transmitting high-frequency signals. The circuit structure of the high-frequency module 1 will be described later.

[0058] Antenna 2 is configured to transmit high-frequency signals output from high-frequency module 1, and to receive high-frequency signals output from external sources and input the high-frequency signals into high-frequency module 1.

[0059] RFIC 3 is configured to have a control unit (not shown) that controls the power amplifier 10 and low-noise amplifier 20 of the high-frequency module 1 (described later), and processes the high-frequency signals transmitted and received by the antenna 2. In this configuration, RFIC 3 performs signal processing on the high-frequency received signal input via the receiving path of the high-frequency module 1 using down-conversion or the like, and outputs the received signal generated by this signal processing to BBIC 4. Additionally, RFIC 3 performs signal processing on the transmitted signal input from BBIC 4 using up-conversion or the like, and outputs the transmitted signal generated by this signal processing to antenna 2. The functions of RFIC 3 as a control unit, or all of them, can be installed externally to RFIC 3, such as BBIC 4 or the high-frequency module 1.

[0060] BBIC 4 is a baseband signal processing circuit configured to perform signal processing using an intermediate frequency band with a frequency lower than that of the high-frequency signal transmitted by the high-frequency module 1. In BBIC 4, for example, image signals used for image display are processed.

[0061] Reference Figure 1 An example of the circuit structure of high-frequency module 1 will be described below. The high-frequency module 1 of this embodiment includes a power amplifier 10, a PA control circuit (PAC) 11, a low-noise amplifier 20, a duplexer 6, an antenna connection terminal 100, a high-frequency input terminal 110, a control input terminal 111, and a high-frequency output terminal 120. For example... Figure 2 As shown, a power amplifier 10, a PA control circuit 11, a low-noise amplifier 20, and a duplexer 6 are disposed on the main surface 811 of the module substrate 81. The duplexer 6 includes a transmit filter 6T and a receive filter 6R. The module substrate 81 is an example of a substrate, the power amplifier 10 is an example of a first electronic component, and the receive filter 6R is an example of a second electronic component.

[0062] The antenna connection terminal 100 is configured to receive a high-frequency signal from the antenna 2 and output a high-frequency signal to the antenna 2.

[0063] The high-frequency input terminal 110 is configured to receive a transmission signal from RFIC 3 in communication band A.

[0064] The control input terminal 111 is configured to input digital signals from the RFIC to control the gain of the power amplifier 10 and the power supply voltage and bias voltage supplied to the power amplifier 10.

[0065] The high-frequency output terminal 120 is configured to output a high-frequency receiving signal to the outside of the high-frequency module 1. In this configuration, the high-frequency output terminal 120 is configured to output a receiving signal of communication band A to the RFIC 3.

[0066] The power amplifier 10 is configured to amplify the transmitted signal of communication band A. In this configuration, the input terminal of the power amplifier 10 is connected to the high-frequency input terminal 110, and the output terminal of the power amplifier 10 is connected to the transmitting filter 6T.

[0067] PA control circuit 11 is configured to control power amplifier 10. PA control circuit 11 controls power amplifier 10 based on digital signals input to control input terminal 111. In this embodiment, PA control circuit 11 is, for example, a semiconductor integrated circuit, but is not limited thereto.

[0068] The low-noise amplifier 20 is configured to amplify the received signal of communication band A input to the antenna connection terminal 100. In this configuration, the input terminal of the low-noise amplifier 20 is connected to the receiving filter 6R, and the output terminal of the low-noise amplifier 20 is connected to the high-frequency output terminal 120.

[0069] The duplexer 6 is configured to transmit the received and transmitted signals of the communication frequency band A, which are input and output in the antenna connection terminal 100, in FDD (Frequency Division Duplex) mode.

[0070] The transmitting filter 6T is a passband filter with a transmitting frequency band of communication band A. The input terminal of the transmitting filter 6T is connected to the power amplifier 10, and the output terminal is connected to the antenna connection terminal 100.

[0071] The receiving filter 6R is a filter with a passband that includes the receiving frequency of communication band A. The input terminal of the receiving filter 6R is connected to the antenna connection terminal 100, and the output terminal is connected to the low-noise amplifier 20.

[0072] The transmitting filter 6T and the receiving filter 6R are, for example, elastic wave filters or LC resonant filters, but are not limited to these.

[0073] The high-frequency module 1 may also include a matching circuit configured between the transmitting filter 6T and the power amplifier 10. With this configuration, impedance matching between the transmitting filter 6T and the power amplifier 10 can be achieved. Alternatively, it may include a matching circuit configured between the receiving filter 6R and the low-noise amplifier 20. With this configuration, impedance matching between the receiving filter 6R and the low-noise amplifier 20 can be achieved.

[0074] In this configuration, the high-frequency module 1 is configured to transmit and receive high-frequency signals in communication band A, but it can also be configured to transmit and receive high-frequency signals in communication band B, which is different from communication band A. In this case, the high-frequency module 1 can also be equipped with a duplexer for transmitting received and transmitted signals in communication band B in FDD mode.

[0075] Communication band A and communication band B are not limited to communication bands used by FDD. For example, one or both of communication band A and communication band B can also be communication bands used by TDD (Time Division Duplex).

[0076] Next, use Figure 2 and Figure 3 An example of the component configuration of high-frequency module 1 is illustrated.

[0077] Figure 2This is a top view of the high-frequency module 1, showing an example of component configuration when the main surface 811 of the module substrate 81 is viewed from the thickness direction. Figure 3 This is a cross-sectional view of high-frequency module 1, showing along... Figure 2 The cross-section of line II. In this configuration, the thickness direction is the direction intersecting the main surfaces 811 and 812 of the module substrate 81 (e.g., Figure 3 (in the Z direction).

[0078] The power amplifier 10 is located at one end of the two ends in the X direction of the module substrate 81 (e.g., Figure 2 The PA control circuit 11 is located near the left end of the module substrate 81. The PA control circuit 11 is positioned approximately at the same location as the power amplifier 10 in the X direction and is spaced apart from the power amplifier 10 in the Y direction. The low-noise amplifier 20 is located at the other end of the two ends in the X direction of the module substrate 81 (e.g., at the left end). Figure 2 It is located near the right end of the power amplifier 10, in roughly the same position in the Y direction.

[0079] The receiving filter 6R is located between the power amplifier 10 and the low-noise amplifier 20 in the X direction of the module substrate 81, and is located at approximately the same position as the power amplifier 10 and the low-noise amplifier 20 in the Y direction. The transmitting filter 6T is located at approximately the same position as the receiving filter 6R in the X direction, and is arranged at intervals from the receiving filter 6R in the Y direction.

[0080] like Figure 3 As shown, the module substrate 81 has a main surface 811 disposed at one end in the thickness direction Z, a main surface 812 disposed at the end opposite to the main surface 811 in the thickness direction, a ground layer 84, a housing portion 85, and a signal line 86. The module substrate 81 has a rectangular shape with the X direction as its long side and the Y direction as its short side when viewed along the thickness direction Z, but is not limited to this. Low-temperature co-fired ceramic substrates, high-temperature co-fired ceramic substrates, printed circuit boards, etc., can be used as the module substrate 81, but are not limited to these.

[0081] Main surface 811 is an example of a first main surface, and main surface 812 is an example of a second main surface. As described above, multiple electronic components (i.e., power amplifier 10, PA control circuit 11, low noise amplifier 20, transmit filter 6T, and receive filter 6R) are arranged on main surface 811. In this configuration, the power amplifier 10 and PA control circuit 11 are arranged along the Y direction and spaced apart.

[0082] The receiving portion 85 extends from the main surface 811 toward the main surface 812 along the thickness direction Z of the module substrate 81. In this configuration, as... Figure 2As shown, the module substrate 81 has a plurality of receiving portions 85 (e.g., three receiving portions 85) arranged at intervals (e.g., equally spaced) in the Y direction. Each receiving portion 85 is located in the X direction between the power amplifier 10 and the receiving filter 6R and between the PA control circuit 11 and the transmitting filter 6T. Each receiving portion 85 has an opening on its main surface 811, which is formed by a cylindrical recess capable of accommodating a portion of the shielding conductor 91. The bottom of the receiving portion 85 is located in the thickness direction Z between the main surface 811 and the main surface 812. The shape of the receiving portion 85 is not limited to a generally cylindrical shape, and any shape capable of accommodating a portion of the shielding conductor 91 can be adopted. The side and bottom surfaces of the receiving portion 85 can also be plated with metal. With this configuration, the electrical connection between the shielding conductor 91 and the receiving portion 85 can be strengthened.

[0083] Resin component 82, an example of a first resin component, is disposed on the main surface 811. Resin component 82 covers the main surface 811, multiple electronic components disposed on the main surface 811, and the shielding conductor 91. This improves the mounting reliability of the components disposed on the main surface 811 and covered by resin component 82. Resin component 82 only needs to cover at least the sides of the multiple electronic components, or it may not cover the top surfaces of the multiple electronic components.

[0084] like Figure 3 As shown, when viewed along the thickness direction Z of the module substrate 81, the shielding layer 83 is disposed on the main surface 811 in a manner that overlaps with at least a portion of the main surface 811. In this configuration, the shielding layer 83, for example, comprises a conductive material and is disposed on the surface of the resin member 82. In a cross-section along line II, the shielding layer 83 covers the X-direction surface of the module substrate 81 and the entire main surface 811, but is not limited thereto. For example, the shielding layer 83 may also be configured to cover only any portion of the plurality of electronic components disposed on the main surface 811 and the shielding conductor 91 in a cross-section along line II.

[0085] A shielding conductor 91 is disposed on the main surface 811 and extends along the thickness direction Z. The shielding conductor 91 is positioned between the power amplifier 10 and the receiving filter 6R disposed on the main surface 811 when viewed along the thickness direction Z of the module substrate 81. A portion of the shielding conductor 91 is disposed in the receiving portion 85. In this configuration, the high-frequency module 1 has the same number of shielding conductors 91 as the receiving portion 85 (e.g., three shielding conductors 91), with one shielding conductor 91 located in one receiving portion 85, but this is not a limitation. The high-frequency module 1 only needs to have at least one shielding conductor 91. Each shielding conductor 91, for example, contains a conductive material. One end of each shielding conductor 91 in the Z direction is disposed in the receiving portion 85, and the other end of the shielding conductor 91 in the Z direction is connected to the shielding layer 83. Since the shielding conductor 91 is disposed between the power amplifier 10 and the receiving filter 6R, the current generated in the shielding layer 83 due to the power amplifier 10 and the receiving filter 6R flows through the shielding conductor 91 to the module substrate 81 side, preventing electromagnetic field coupling between the power amplifier 10 and the receiving filter 6R. As a result, it is possible to suppress the degradation of transmitted signal quality or the deterioration of received sensitivity.

[0086] In this embodiment, the shielding conductor 91 has a cylindrical shape, but is not limited to this. For example, the shielding conductor 91 may also have a cuboid shape.

[0087] In this embodiment, the first electronic component is a power amplifier 10, and the second electronic component is a receiving filter 6R, but the embodiment is not limited to these. The first and second electronic components can be any two of the electronic components disposed on the main surface 811. For example, the first electronic component could be a filter with a passband of communication band A, and the second electronic component could be a filter with a passband of communication band B.

[0088] A portion of the shielding conductor 91 is disposed inside the housing portion 85. This structure strengthens the connection between the shielding conductor 91 and the module substrate 81.

[0089] like Figure 3As shown, the ground layer 84 is disposed inside the module substrate 81 and is set to ground potential. In this embodiment, the ground layer 84 is mainly composed of a highly conductive material such as metal, and includes a first portion 841 disposed around the housing portion 85 and connected to the shielding conductor 91, a second portion 842 connected to the power amplifier 10, a third portion 843 connected to the receiving filter 6R, and a fourth portion 844 exposed on the main surface 812. The second portion 842, the third portion 843, and the fourth portion 844 are each connected to the first portion 841. As an example, the second portion 842 is directly connected to the power amplifier 10, and the third portion 843 is directly connected to the receiving filter 6R. A conductor via 87 extending from the fourth portion 844 along the Z direction to the main surface 812 is connected to the fourth portion 844.

[0090] The shielding conductor 91 is connected to the ground layer 84 in the housing, thus the grounding of the shielding conductor 91 is strengthened, which can further suppress the electromagnetic field coupling between the power amplifier 10 and the receiving filter 6R.

[0091] Signal line 86 is an example of a signal line, disposed inside the module substrate 81, and when viewed from the thickness direction Z of the module substrate 81, it overlaps entirely with the shielding conductor 91. In this configuration, signal line 86 is connected to the power amplifier 10 and the transmitting filter 6T. Signal line 86 can also be wiring for transmitting digital signals. According to this structure, in the high-frequency module 1 of this configuration, the connection between the shielding conductor 91 and the module substrate 81 can be strengthened, and by arranging the signal line 86 in a manner that overlaps with the shielding conductor, the internal space of the module substrate 81 can be utilized efficiently. The signal line 86 is not limited to the case where it completely overlaps with the shielding conductor 91, as long as at least a portion of the signal line 86 overlaps with the shielding conductor 91.

[0092] The high-frequency module 1 may also omit the resin component 82. That is, the resin component 82 can be omitted.

[0093] The module substrate 81 may also omit the ground layer 84. That is, the ground layer 84 can be omitted.

[0094] The module substrate 81 may also omit the signal line 86. That is, the signal line 86 can be omitted.

[0095] (Second Implementation)

[0096] use Figure 4 The high-frequency module 1A according to the second embodiment of this disclosure will be described.

[0097] like Figure 4As shown, the difference between the high-frequency module 1A of the second embodiment and the high-frequency module 1 of the first embodiment is that the module substrate 81 has signal lines 88 and 89, the receiving portion 85 extends to the main surface 812, and the shielding conductor 91 penetrates the module substrate 81 in the thickness direction Z.

[0098] Signal line 88 is an example of a signal transmitting line; it is a wire used to transmit signals. Figure 4 In this circuit, signal line 88 is connected to power amplifier 10, but is not limited to this; for example, it can also be connected to transmitting filter 6T. Signal line 88 is disposed inside module substrate 81.

[0099] Signal line 89 is an example of a receiving signal line, and is a wire used to transmit received signals. In this variation, signal line 89 is disposed inside the module substrate 81 and connected to the receiving filter 6R and the low-noise amplifier 20, but is not limited thereto. For example, signal line 89 may also be connected to either the receiving filter 6R or the low-noise amplifier 20.

[0100] In this configuration, the shielding conductor 91 is positioned between signal line 88 and signal line 89. This structure prevents electromagnetic interference between the transmitted signal flowing in signal line 88 and the received signal flowing in signal line 89, thereby suppressing degradation of the transmitted signal quality or deterioration of the received sensitivity.

[0101] In this configuration, the receiving portion 85 extends from the main surface 811 to the main surface 812, and the shielding conductor 91 penetrates the module substrate 81 in the thickness direction Z. This structure further strengthens the connection between the shielding conductor 91 and the module substrate 81. In this configuration, the end of the shielding conductor 91 located inside the receiving portion 85 in the Z direction lies on the same plane as the main surface 812.

[0102] (Third Implementation)

[0103] use Figures 5-7 The high-frequency module 1B according to the third embodiment of this disclosure will be described.

[0104] like Figures 5-7 As shown, the high-frequency module 1B of the third embodiment differs from the high-frequency module 1A of the second embodiment in that it includes resin components 821 and 822, external connection terminals 92, and a plurality of external connection terminals 93. Hereinafter, the same reference numerals will be used to denote the parts that are the same as in the second embodiment, and descriptions will be omitted.

[0105] Resin component 821, an example of a first resin component, is disposed on the main surface 811. Resin component 821 covers the main surface 811, multiple electronic components disposed on the main surface 811, and the shielding conductor 91. This improves the installation reliability of the components disposed on the main surface 811 and covered by resin component 821. Resin component 821 may cover at least the sides of the multiple electronic components, or it may not cover the top surfaces of the multiple electronic components.

[0106] Resin component 822 is an example of a second resin component and is disposed on the main surface 812. Resin component 822 covers the main surface 812, multiple electronic components disposed on the main surface 812, and the shielding conductor 91. This improves the mounting reliability of the components disposed on the main surface 812 and covered by resin component 822. Resin component 822 only needs to cover at least the sides of the multiple electronic components, or it may not cover the top surfaces of the multiple electronic components.

[0107] In this method, such as Figure 5 and Figure 6 As shown, the power amplifier 10, the transmitting filter 6T, and the receiving filter 6R are disposed on the main surface 811, while the PA control circuit 11 and the low-noise amplifier 20 are disposed on the main surface 812. This configuration reduces the area of ​​the high-frequency module 1B when viewed along the Z-direction. Furthermore, the combination of components disposed on the main surfaces 811 and 812 is not limited to the above-described configuration; for example, the PA control circuit 11 may also be disposed on the main surface 811.

[0108] like Figure 7 As shown, the external connection terminal 92 is disposed on the resin member 822. In this configuration, the shielding conductor 91 penetrates the module substrate 81 in the Z direction, with its two ends in the Z direction located outside the housing portion 85. The external connection terminal 92 is disposed at one end of the shielding conductor 91 in the Z direction, located closer to the main surface 812 than the main surface 811. With this configuration, the connection between the shielding layer 83 and the external connection terminal 92 is strengthened, preventing electromagnetic field coupling between the first electronic component (e.g., power amplifier 10, PA control circuit 11) and the second electronic component (e.g., receiver filter 6R, low noise amplifier 20). In other words, electromagnetic field coupling between electronic components disposed with the shielding conductor 91 sandwiched in the middle of the main surface 811 and between electronic components disposed with the shielding conductor 91 sandwiched in the middle of the main surface 812 can be prevented. As a result, degradation of the transmitted signal quality or deterioration of the received sensitivity can be suppressed.

[0109] like Figure 6 As shown, multiple external connection terminals 93 are disposed on the resin component 822, except for Figure 1In addition to the antenna connection terminal 100, high-frequency input terminal 110, control input terminal 111, and high-frequency output terminal 120 shown, a ground terminal (not shown) connected to the ground plane 84 is also included. The high-frequency module 1B has a plurality of pillar electrodes (not shown) disposed on the main surface 812 and extending along the thickness direction Z. These pillar electrodes are connected to wiring disposed inside the module substrate 81. A plurality of external connection terminals 93 are respectively connected to wiring disposed inside the module substrate 81 via the pillar electrodes.

[0110] The high-frequency module 1B may also be without external connection terminals 92 and 93, and a portion of the shielding conductor 91 may be exposed from the resin component 822.

[0111] The high-frequency module 1B may also not have multiple external connection terminals 93, and a portion of the post electrode corresponding to the multiple external connection terminals 93, including antenna connection terminal 100, high-frequency input terminal 110, control input terminal 111 and high-frequency output terminal 120, may also be exposed from the resin component 822.

[0112] In this disclosure, "A is positioned between B and C" means that at least one of a plurality of line segments connecting any point in B to any point in C passes through A.

[0113] The embodiments and modifications of this disclosure can be combined with each other, or with each other, or with each other. Features included in the embodiments and modifications of this disclosure can also be combined with each other.

[0114] Of course, the details of this disclosure can be varied in the structural aspects, and the combination and order of elements in each embodiment can be varied without departing from the scope and spirit of this disclosure.

[0115] Explanation of reference numerals in the attached figures

[0116] 1. 1A, 1B: High-frequency modules;

[0117] 2: Antenna;

[0118] 3: High-frequency signal processing circuit;

[0119] 4: Baseband signal processing circuit;

[0120] 5: Communication device;

[0121] 6: Duplexer;

[0122] 6T: Transmitting filter;

[0123] 6R: Receiver filter;

[0124] 81: Module baseboard;

[0125] 811, 812: Main side;

[0126] 82, 821, 822: Resin components;

[0127] 83: Shielding layer;

[0128] 84: Strata;

[0129] 841, 842, 843, 844: Partial;

[0130] 85: Containment Department;

[0131] 86, 88, 89: Signal lines;

[0132] 87: Conductor through hole;

[0133] 91: Shielded conductor;

[0134] 92, 93: External connection terminals;

[0135] 10: Power amplifier;

[0136] 11: PA control circuit;

[0137] 20: Low-noise amplifier;

[0138] 100: Antenna connection terminal;

[0139] 110: High-frequency input terminal;

[0140] 111: Control input terminal;

[0141] 120: High-frequency output terminal.

Claims

1. A high-frequency module, comprising: A substrate having a first main surface disposed at one end in the thickness direction and a second main surface disposed at the end opposite to the first main surface in the thickness direction; A first electronic component and a second electronic component are disposed on the first main surface; A shielding layer is disposed on the first main surface in such a manner that it overlaps at least a portion of the substrate when viewed along the thickness direction; as well as A shielding conductor, disposed between the first electronic component and the second electronic component when viewed along the thickness direction, the shielding conductor extending along the thickness direction, one end of the shielding conductor being connected to the shielding layer. The substrate has a receiving portion extending along the thickness direction from the first main surface toward the second main surface. A portion of the shielding conductor is disposed within the housing.

2. The high-frequency module according to claim 1, wherein, It comprises a first resin component covering the first main surface, the first electronic component, the second electronic component, and the shielding conductor. The shielding layer is disposed on the surface of the first resin component.

3. The high-frequency module according to claim 1, wherein, It has a ground layer disposed inside the substrate. The shielding conductor is connected to the ground within the containment section.

4. The high-frequency module according to any one of claims 1 to 3, wherein, The substrate has transmit signal lines and receive signal lines disposed inside the substrate. A portion of the shielding conductor is disposed between the transmitting signal line and the receiving signal line.

5. The high-frequency module according to any one of claims 1 to 3, wherein, The receiving section extends from the first main surface to the second main surface. The shielding conductor extends through the substrate in the thickness direction.

6. The high-frequency module according to any one of claims 1 to 3, wherein, It has signal lines disposed inside the substrate. When viewed along the thickness direction, the shielding conductor overlaps with at least a portion of the signal line.

7. The high-frequency module according to claim 5, wherein, have: A second resin component, disposed on the second main surface; and External connection terminals are disposed on the second resin component. The shielding conductor is connected to the external connection terminal.

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