Solar cells and photovoltaic modules

Abstract

The embodiment of the present disclosure provides a solar cell and a photovoltaic module. The solar cell comprises: a cell substrate, the cell substrate comprising a first surface and a second surface; the cell substrate comprises: a first doped region, a second doped region and a first gap region between the first doped region and the second doped region, the first doped region has a first doping type, the second doped region has a second doping type, the first doping type and the second doping type are different, and a first sub-cell comprises the first doped region and the second doped region; a third doped region, a fourth doped region and a second gap region between the third doped region and the fourth doped region, the third doped region has the first doping type, the fourth doped region has the second doping type, and a second sub-cell comprises the third doped region and the fourth doped region; the first sub-cell and the second sub-cell are arranged along a second direction and are connected in series; and the second doped region and the third doped region are arranged adjacent to each other along the second direction.

Description

Technical Field

[0001] This disclosure relates to photovoltaic technology, including but not limited to a solar cell and a photovoltaic module. Background Technology

[0002] As fossil fuels are gradually depleted, solar cells are becoming increasingly widely used as a new energy alternative. Solar cells absorb sunlight, generate charge carriers using the photovoltaic principle, and then use a grid structure to extract these carriers, thus converting sunlight into electricity. Crystalline silicon cells are a key technology in renewable energy and have become the largest component of new energy sources.

[0003] Currently, crystalline silicon solar cells are facing challenges such as improving cell efficiency, improving the materials and processes used to fabricate cells (e.g., improving the quality of the passivation layer), and flexible and lightweight applications. Summary of the Invention

[0004] To address at least one of the aforementioned technical problems, this disclosure provides a solar cell and a photovoltaic module.

[0005] In a first aspect, embodiments of this disclosure provide a solar cell, the solar cell comprising: a cell substrate, the cell substrate including a first surface and a second surface disposed opposite to each other along a first direction; the cell substrate including: a first doped region, a second doped region, and a first gap region located between the first doped region and the second doped region, the first doped region having a first doping type, the second doped region having a second doping type, the first doping type and the second doping type being different, the second surface exposing the first doped region and the second doped region; a first sub-cell including the first doped region, the second doped region, and the first gap region; a third doped region, a fourth doped region, and a second gap region located between the third doped region and the fourth doped region, the third doped region having the first doping type, the fourth doped region having the second doping type, the second surface exposing the third doped region and the fourth doped region; the second sub-cell including the third doped region, the fourth doped region, and the second gap region; the first sub-cell and the second sub-cell are arranged along a second direction and connected in series, the first direction and the second direction being perpendicular to each other; the second doped region and the third doped region are disposed adjacent to each other along the second direction.

[0006] In some embodiments, the second doped region and the third doped region are in contact.

[0007] In some embodiments, the first sub-cell further includes: a first electrode disposed on the second surface and connected to the first doped region; a second electrode disposed on the second surface and connected to the second doped region; the second sub-cell further includes: a third electrode disposed on the second surface and connected to the third doped region; a fourth electrode disposed on the second surface and connected to the fourth doped region; the second electrode and the third electrode are connected.

[0008] In some embodiments, the first electrode includes: a plurality of first conductive structures extending along the second direction; the second electrode includes: a plurality of second conductive structures extending along the second direction; the first conductive structures and the second conductive structures are alternately arranged along a third direction; any two of the first direction, the second direction, and the third direction are perpendicular to each other; the third electrode includes: a plurality of third conductive structures extending along the second direction; the fourth electrode includes: a plurality of fourth conductive structures extending along the second direction; the third conductive structures and the fourth conductive structures are alternately arranged along the third direction; the second conductive structures and the third conductive structures are arranged along the second direction and in contact with each other, and the first conductive structures and the fourth conductive structures are arranged along the second direction.

[0009] In some embodiments, the first electrode further includes: a plurality of first gate line structures extending along the third direction; the second electrode further includes: a plurality of second gate line structures extending along the third direction, wherein the first gate line structures and the second gate line structures are alternately arranged along the second direction; the plurality of first gate line structures arranged along the second direction are connected to the same first conductive structure, and the plurality of second gate line structures arranged along the second direction are connected to the same second conductive structure; the third electrode further includes: a plurality of third gate line structures extending along the third direction; the fourth electrode further includes: a plurality of fourth gate line structures extending along the third direction, wherein the third gate line structures and the fourth gate line structures are alternately arranged along the second direction; the plurality of third gate line structures arranged along the second direction are connected to the same third conductive structure, and the plurality of fourth gate line structures arranged along the second direction are connected to the same fourth conductive structure; the second gate line structures and the third gate line structures are arranged along the second direction and are in contact with each other.

[0010] In some embodiments, the first electrode includes a first conductive structure extending along a third direction; the second electrode includes a second conductive structure extending along the third direction; the first conductive structure and the second conductive structure are arranged along a second direction, wherein any two of the first direction, the second direction, and the third direction are perpendicular to each other; the third electrode includes a third conductive structure extending along the third direction; the fourth electrode includes a fourth conductive structure extending along the third direction; the third conductive structure and the fourth conductive structure are arranged along the second direction; the second conductive structure and the third conductive structure are located between the first conductive structure and the fourth conductive structure, and the second conductive structure and the third conductive structure are in contact.

[0011] In some embodiments, the first electrode further includes: a plurality of first gate line structures extending along the second direction; the second electrode further includes: a plurality of second gate line structures extending along the second direction, wherein the first gate line structures and the second gate line structures are alternately arranged along the third direction; the plurality of first gate line structures arranged along the third direction are connected to the same first conductive structure, and the plurality of second gate line structures arranged along the third direction are connected to the same second conductive structure; the third electrode further includes: a plurality of third gate line structures extending along the second direction; the fourth electrode further includes: a plurality of fourth gate line structures extending along the second direction, wherein the third gate line structures and the fourth gate line structures are alternately arranged along the third direction; the plurality of third gate line structures arranged along the third direction are connected to the same third conductive structure, and the plurality of fourth gate line structures arranged along the third direction are connected to the same fourth conductive structure.

[0012] In some embodiments, the battery substrate further includes: a fifth doped region, a sixth doped region, and a third gap region located between the fifth doped region and the sixth doped region, the fifth doped region having the first doping type, the sixth doped region having the second doping type, and the second surface exposing the fifth doped region and the sixth doped region; the third sub-cell includes: the fifth doped region, the sixth doped region, and the third gap region; a fifth electrode disposed on the second surface and connected to the fifth doped region; a sixth electrode disposed on the second surface and connected to the sixth doped region; a fourth electrode connected to the fifth electrode; the second sub-cell is located between the first sub-cell and the third sub-cell, and the first sub-cell, the second sub-cell, and the third sub-cell are connected in series.

[0013] In some embodiments, the battery substrate further includes: a seventh doped region, an eighth doped region, and a fourth gap region located between the seventh doped region and the eighth doped region, the seventh doped region having the first doping type, the eighth doped region having the second doping type, and the second surface exposing the seventh doped region and the eighth doped region; the fourth sub-cell includes: the seventh doped region, the eighth doped region, and the fourth gap region; a seventh electrode disposed on the second surface and connected to the seventh doped region; an eighth electrode disposed on the second surface and connected to the eighth doped region; a sixth electrode connected to the seventh electrode; the second sub-cell and the third sub-cell are both located between the first sub-cell and the fourth sub-cell, and the first sub-cell, the second sub-cell, the third sub-cell, and the fourth sub-cell are connected in series.

[0014] In some embodiments, the solar cell includes at least one of an interdigitated back contact cell, a tunnel oxide passivated back contact cell, a heterojunction back contact cell, and a hybrid passivated back contact cell.

[0015] Secondly, this disclosure provides a photovoltaic module, which includes a solar cell as described in the above technical solution.

[0016] In this embodiment, a first sub-cell and a second sub-cell are arranged along a second direction and connected in series. The second doped region included in the first sub-cell has a second doping type, and the third doped region included in the second sub-cell has a first doping type. The second and third doped regions are arranged adjacent to each other along the second direction. Firstly, by fabricating a series-connected first and second sub-cell on the same cell substrate without physical cutting and slab preparation, high voltage and low current output of the solar cell are achieved, reducing ohmic losses in the solar cell and its modules, and improving the efficiency of the solar cell and its modules. Secondly, it eliminates the need to form an isolation region between the second and third doped regions, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell caused by ineffective passivation of the isolation region. Thirdly, since physical cutting and slab preparation is not required, laser cutting steps and related equipment can be eliminated; and since no additional cutting surfaces are introduced, and no additional edge recombination occurs, edge passivation steps and related equipment can be eliminated. Attached Figure Description

[0017] Figure 1 A schematic diagram of the D1D2 cross-sectional structure of the solar cell provided in the first embodiment of this disclosure;

[0018] Figure 2 This is a schematic diagram of the D1D2 cross-sectional structure of a solar cell provided in the second embodiment of this disclosure;

[0019] Figure 3 This is a schematic diagram of the D2D3 cross-sectional structure of a solar cell provided in the third embodiment of this disclosure;

[0020] Figure 4 This is a schematic diagram of the D2D3 cross-sectional structure of a solar cell provided in the fourth embodiment of this disclosure;

[0021] Figure 5 This is a schematic diagram of the D2D3 cross-sectional structure of a solar cell provided in the fifth embodiment of this disclosure;

[0022] Figure 6 A schematic diagram of the D2D3 cross-sectional structure of a solar cell provided in the sixth embodiment of this disclosure;

[0023] Figure 7 This is a schematic block diagram of a photovoltaic module provided in an embodiment of this disclosure.

[0024] It should be noted that the terms "first" and "second" mentioned above are only used to distinguish between different options and do not represent the degree of superiority or inferiority of the options or their priority in the implementation process. Detailed Implementation

[0025] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0026] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0027] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0028] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0029] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0030] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0031] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0032] To make the objectives, technical solutions, and advantages of this disclosure clearer, the disclosure will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on this disclosure. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0033] With continuous innovation and iteration in crystalline silicon solar cell technology, from passivated emitter and rear cell (PERC) to tunnel oxide passivated contact (TOPCon) cells and heterojunction (HJT) cells, the photoelectric conversion efficiency of crystalline silicon cells and their modules has been continuously improving. Currently, the photoelectric conversion efficiency of crystalline silicon cells exceeds 26%, and the photoelectric conversion efficiency of modules exceeds 24%. Furthermore, with the continuous improvement of crystalline silicon cell technology, the size of silicon wafers is also continuously increasing. Currently, the size of silicon wafers can reach 182×182cm. 2 and 210×210cm 2 As the size of silicon wafers increases, the power of a single solar cell can be effectively improved, especially since the photocurrent in a solar cell increases proportionally with the area of ​​the silicon wafer.

[0034] However, an increase in photocurrent in solar cells can lead to additional power loss across the series resistance, resulting in a decrease in the photoelectric conversion efficiency of solar cells, especially modules.

[0035] To address the aforementioned technical challenges, the industry employs laser cutting technology to physically divide large silicon wafers or solar cells into smaller wafers or solar cells, thereby reducing the photocurrent in a single solar cell. These smaller solar cells are then connected in series to achieve high voltage output for the module. Currently, the mainstream slicing technology involves cutting a single solar cell into two smaller pieces, known as bi-slicing technology. The industry is developing multi-slicing technologies, such as tri-slicing and quadri-slicing, to further divide the entire solar cell into even smaller areas. However, slicing a single solar cell creates exposed crystalline silicon surfaces at the cutting points, leading to additional photogenerated carrier edge recombination and reducing the photoelectric conversion efficiency of the smaller solar cells.

[0036] To address the aforementioned technical challenges, edge passivation can be used in some examples, depositing one or more passivation layers, such as amorphous silicon, silicon nitride, or aluminum oxide, at the cut locations of small solar cells. While this edge passivation method effectively solves the edge recombination problem, improves the efficiency of small solar cells, and increases the output power of the module, it requires vacuum equipment, such as atomic layer deposition (ALD) equipment, and special chemical gases like trimethylaluminium (TMA) as raw materials. This increases equipment and operating costs and adds complexity to the manufacturing process.

[0037] To address the aforementioned technical issues, in some examples, edge isolation can be used. This involves using laser technology to etch away a certain width of the P / N junction at the edge, reducing the probability of carrier recombination at the edge. However, considering the improvement effect on edge recombination, the edge isolation method is inferior to edge passivation. In summary, both edge passivation and edge isolation introduce additional process steps, ultimately increasing the manufacturing cost of solar cells and their modules.

[0038] In view of this, in order to solve at least one of the above-mentioned technical problems, this disclosure provides a solar cell and a photovoltaic module.

[0039] Here, we first define the various directions that may be involved in the following text. The stacking direction of the material layers in the solar cell is defined as the first direction. A second direction and a third direction that are perpendicular to each other are defined in the plane where the cell substrate is located. The second direction is also referred to as the arrangement direction of the first sub-cell and the second sub-cell. In some embodiments, any two of the first direction (represented as direction D1 in the figure), the second direction (represented as direction D2 in the figure), and the third direction (represented as direction D3 in the figure) are perpendicular to each other.

[0040] refer to Figure 1 and Figure 2 , Figure 1 and Figure 2 These are schematic diagrams of the D1D2 cross-sectional structure of the solar cells provided in the first and second embodiments of this disclosure, respectively. Figure 1 The diagram illustrates a homojunction back contact (BC) battery. Figure 2 The diagram illustrates a tunneled oxide passivated back contact (TOPCon BC, TBC) cell, a heterojunction back contact (HJT BC, HBC) cell, or a hybrid passivated back contact (Hybrid Passivated BC, HPBC) cell. The following will combine... Figure 1 and Figure 2The solar cells provided in the embodiments of this disclosure will be described.

[0041] like Figure 1 As shown, this disclosure provides a solar cell 100, which includes a cell substrate 140. The cell substrate 140 includes a first surface 141 and a second surface 142 disposed opposite to each other along the D1 direction. The cell substrate 140 includes a first doped region 111, a second doped region 112, and a first gap region 113 located between the first doped region 111 and the second doped region 112. The first doped region 111 has a first doping type, and the second doped region 112 has a second doping type. The first doping type and the second doping type are different. The second surface 142 exposes the first doped region 111 and the second doped region 112. A first sub-cell 110 includes the first doped region 111 and the second doped region 112. 12 and a first gap region 113; a third doped region 121, a fourth doped region 122, and a second gap region 123 located between the third doped region 121 and the fourth doped region 122, the third doped region 121 having a first doping type, the fourth doped region 122 having a second doping type, a second surface 142 exposing the third doped region 121 and the fourth doped region 122, the second sub-cell 120 including the third doped region 121, the fourth doped region 122, and the second gap region 123; the first sub-cell 110 and the second sub-cell 120 are arranged along the D2 direction and are connected in series; the second doped region 112 and the third doped region 121 are arranged adjacent to each other along the D2 direction. Figure 1 The dashed line in the middle indicates the dividing line between the first sub-cell 110 (i.e., the left sub-cell) and the second sub-cell 120 (i.e., the right sub-cell) in the solar cell 100. Figure 1 The dashed circle in the middle indicates the first gap area 113 and the second gap area 123.

[0042] Here, the first surface 141 can also be referred to as the front side of the battery substrate 140, and the second surface 142 can also be referred to as the back side of the battery substrate 140.

[0043] In some embodiments, the battery substrate 140 includes a first portion and a second portion, which are arranged along the D2 direction. A first doped region 111, a second doped region 112, and a first gap region 113 are all located in the first portion of the battery substrate 140, and a third doped region 121, a fourth doped region 122, and a second gap region 123 are all located in the second portion of the battery substrate 140. The second surface 142 of the first portion of the battery substrate 140 exposes the first doped region 111 and the second doped region 112, and the second surface 142 of the second portion of the battery substrate 140 exposes the third doped region 121 and the fourth doped region 122.

[0044] In some specific embodiments, the battery substrate 140 can be a monocrystalline silicon substrate.

[0045] In some specific embodiments, the battery substrate 140 may include silicon wafers directly from a silicon wafer factory or pre-cut silicon wafers (e.g., diced silicon wafers). That is, this disclosure does not impose any particular restrictions on the source and size of the silicon wafers used to fabricate solar cells.

[0046] In some embodiments, the first doping type may include a P-type dopant element, and the second doping type may include an N-type dopant element. In other embodiments, the first doping type may include an N-type dopant element, and the second doping type may include a P-type dopant element. Here, the N-type dopant element may include phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As), etc., and the P-type dopant element may include boron (B), aluminum (Al), gallium (Ga), or indium (In), etc. The following description uses an example where the first doping type includes a P-type dopant element and the second doping type includes an N-type dopant element.

[0047] In some specific embodiments, the solar cell 100 described above includes a homojunction back-contact cell. The cell substrate 140 may include, for example, an N-type silicon wafer; the cell substrate 140 is P-type doped to form a first doped region 111 and a third doped region 121, which can be P-type doped regions; the cell substrate 140 is N-type doped to form a second doped region 112 and a fourth doped region 122, which can be N-type doped regions. The portion of the N-type silicon wafer located between the first doped region 111 and the second doped region 112 forms a first gap region 113; the portion of the N-type silicon wafer located between the third doped region 121 and the fourth doped region 122 forms a second gap region 123. That is, the second surface 142 exposes the first doped region 111, the second doped region 112, and the first gap region 113, and the second surface 142 exposes the third doped region 121, the fourth doped region 122, and the second gap region 123.

[0048] In this embodiment, the first sub-cell 110 and the second sub-cell 120 are arranged along the D2 direction and connected in series. The second doped region 112 included in the first sub-cell 110 has a second doping type, and the third doped region 121 included in the second sub-cell 120 has a first doping type. The second doped region 112 and the third doped region 121 are arranged adjacent to each other along the D2 direction. Firstly, without physical cutting and slab preparation, the first sub-cell 110 and the second sub-cell 120 connected in series are fabricated on the same cell substrate, achieving high voltage and low current output of the solar cell 100, reducing ohmic losses of the solar cell 100 and its modules, and improving the efficiency of the solar cell 100 and its modules. Secondly, it eliminates the need to form an isolation region between the second doped region 112 and the third doped region 121, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 100 caused by ineffective passivation of the isolation region. Thirdly, since physical cutting and slicing are not required, the laser cutting step and related equipment can be eliminated; and since no additional cutting surfaces are introduced and no additional edge composites are generated, the edge passivation step and related equipment can be eliminated.

[0049] It should be noted that preparing an isolation region between two adjacent sub-cells not only introduces new process steps and equipment, increasing manufacturing costs, but also creates a three-dimensional steep structure on both sides of the isolation region during the etching process, and may even result in lateral internal etching. This prevents the insulating passivation layer from effectively passivating the surface of the isolation region, thus affecting the improvement of battery performance.

[0050] In some embodiments, the second doped region 112 and the third doped region 121 are in contact.

[0051] Here, there may be no isolation region between the second doped region 112 and the third doped region 121 arranged adjacent to each other along the D2 direction, that is, the second doped region 112 and the third doped region 121 can be in direct contact.

[0052] Thus, firstly, it eliminates the need to form an isolation region between the second doped region 112 and the third doped region 121, increasing the patterning process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 100 caused by ineffective passivation of the isolation region. Secondly, eliminating the need to form an isolation region reduces the occupied area of ​​the solar cell 100.

[0053] In some embodiments, the first sub-cell 110 further includes: a first electrode 114 disposed on the second surface 142 and connected to the first doped region 111; a second electrode 115 disposed on the second surface 142 and connected to the second doped region 112; the second sub-cell 120 further includes: a third electrode 124 disposed on the second surface 142 and connected to the third doped region 121; a fourth electrode 125 disposed on the second surface 142 and connected to the fourth doped region 122; the second electrode 115 and the third electrode 124 are connected.

[0054] Here, for the solar cell 100, the second electrode 115 and the third electrode 124 are connected to realize the series connection between the first sub-cell 110 and the second sub-cell 120; the first electrode 114 is led out as one electrode (e.g., positive or negative electrode) in the solar cell 100, and the fourth electrode 125 is led out as another electrode (e.g., negative or positive electrode) in the solar cell 100.

[0055] In some embodiments, the first electrode 114, the second electrode 115, the third electrode 124, and the fourth electrode 125 may comprise conductive materials, such as metallic materials.

[0056] In some specific embodiments, the first electrode 114 and the third electrode 124 can be electrodes of the P-type doped region, and the second electrode 115 and the fourth electrode 125 can be electrodes of the N-type doped region.

[0057] In some embodiments, the solar cell 100 further includes a first passivation layer 150, which covers a first surface 141 of the cell substrate 140.

[0058] In some embodiments, the first passivation layer 150 may include a single-layer structure or a multi-layer structure. The material of the first passivation layer 150 may include at least one of, for example, aluminum oxide, silicon nitride, silicon oxide, and silicon oxynitride.

[0059] In some embodiments, the solar cell 100 further includes: a second passivation layer 160, the second passivation layer 160 covering the second surface 142 of the cell substrate 140; the second passivation layer 160 has a first opening, a second opening, a third opening and a fourth opening, a first electrode 114 being connected to a first doped region 111 through the first opening, a second electrode 115 being connected to a second doped region 112 through the second opening, a third electrode 124 being connected to a third doped region 121 through the third opening, and a fourth electrode 125 being connected to a fourth doped region 122 through the fourth opening.

[0060] In some embodiments, the second passivation layer 160 may include a single-layer structure or a multi-layer structure. The material of the second passivation layer 160 may include at least one of, for example, aluminum oxide, silicon nitride, silicon oxide, and silicon oxynitride.

[0061] Combination Figure 1 As shown, the first sub-cell 110 includes: a first passivation layer 150, a cell substrate 140, and a second passivation layer 160 stacked sequentially along the D1 direction; a first doped region 111, a second doped region 112 located in a first portion of the cell substrate 140, and a first gap region 113 located between the first doped region 111 and the second doped region 112; a first electrode 114 connected to the first doped region 111 through a first opening in the second passivation layer 160; and a second electrode 115 connected to the second doped region 112 through a second opening in the second passivation layer 160. The second sub-cell 120 includes: a first passivation layer 150, a cell substrate 140, and a second passivation layer 160 stacked sequentially along the D1 direction; a third doped region 121, a fourth doped region 122 located in the second part of the cell substrate 140, and a second gap region 123 located between the third doped region 121 and the fourth doped region 122; a third electrode 124 connected to the third doped region 121 through a third opening in the second passivation layer 160; and a fourth electrode 125 connected to the fourth doped region 122 through a fourth opening in the second passivation layer 160. In other words, the second doped region 112 in the first sub-cell 110 and the third doped region 121 in the second sub-cell 120 are in direct contact and connected through the second electrode 115 and the third electrode 124 to achieve a series connection between the first sub-cell 110 and the second sub-cell 120.

[0062] Here, the front side of the solar cell 100 is the light-receiving surface, and the back side is the back-lighting surface. All electrodes are located on the back side of the solar cell 100. In this way, by integrating all electrodes on the back side of the solar cell 100, the front side of the solar cell 100 can absorb more solar energy, thereby improving the efficiency of the solar cell 100.

[0063] like Figure 2As shown, this disclosure provides a solar cell 200, which includes a cell substrate 240. The cell substrate 240 includes a first surface 241 and a second surface 242 disposed opposite to each other along the D1 direction. The cell substrate 240 includes a first doped region 211, a second doped region 212, and a first gap region 213 located between the first doped region 211 and the second doped region 212. The first doped region 211 has a first doping type, and the second doped region 212 has a second doping type. The first doping type and the second doping type are different. The second surface 242 exposes the first doped region 211 and the second doped region 212. A first sub-cell 210 includes the first doped region 211 and the second doped region 212. 12 and a first gap region 213; a third doped region 221, a fourth doped region 222, and a second gap region 223 located between the third doped region 221 and the fourth doped region 222, the third doped region 221 having a first doping type, the fourth doped region 222 having a second doping type, a second surface 242 exposing the third doped region 221 and the fourth doped region 222, the second sub-cell 220 including the third doped region 221, the fourth doped region 222, and the second gap region 223; the first sub-cell 210 and the second sub-cell 220 are arranged along the D2 direction and are connected in series; the second doped region 212 and the third doped region 221 are arranged adjacent to each other along the D2 direction. Figure 2 The dashed line in the middle indicates the dividing line between the first sub-cell 210 (i.e., the left sub-cell) and the second sub-cell 220 (i.e., the right sub-cell) in the solar cell 200. Figure 2 The dashed circle in the middle indicates the first gap area 213 and the second gap area 223.

[0064] Here, the first doped region 211, the second doped region 212, the first interstitial region 213, the third doped region 221, the fourth doped region 222, and the second interstitial region 223 can be referenced. Figure 1 The relevant statements will not be repeated here.

[0065] In some embodiments, the solar cell 200 may include a TBC cell. The cell substrate 240 may include, for example, an N-type silicon wafer, a tunneling oxide layer, and a doped polycrystalline silicon layer stacked along the D1 direction. The first doped region 211 and the third doped region 221 may include a tunneling oxide layer and a P-type doped polycrystalline silicon layer stacked along the D1 direction, and the second doped region 212 and the fourth doped region 222 may include a tunneling oxide layer and an N-type doped polycrystalline silicon layer stacked along the D1 direction. A first gap region 213 is located between the first doped region 211 and the second doped region 212 and exposes the N-type silicon wafer, while a second gap region 223 is located between the third doped region 221 and the fourth doped region 222 and exposes the N-type silicon wafer.

[0066] In some embodiments, the solar cell 200 may include an HBC cell. The cell substrate 240 may include, for example, an N-type silicon wafer, an intrinsic hydrogenated amorphous silicon layer, and a doped amorphous silicon layer (or, a doped microcrystalline silicon layer) stacked along the D1 direction. The first doped region 211, the second doped region 212, the third doped region 221, and the fourth doped region 222 are all disposed on the N-type silicon wafer. The first doped region 211 and the third doped region 221 may include an intrinsic hydrogenated amorphous silicon layer and a P-type doped amorphous silicon layer (or, a P-type doped microcrystalline silicon layer) stacked along the D1 direction, and the second doped region 212 and the fourth doped region 222 may include an intrinsic hydrogenated amorphous silicon layer and an N-type doped amorphous silicon layer (or, an N-type doped microcrystalline silicon layer) stacked along the D1 direction.

[0067] In some embodiments, the second doped region 212 and the third doped region 221 are in contact.

[0068] Here, there may be no isolation region between the second doped region 212 and the third doped region 221 that are adjacent along the D2 direction, that is, the second doped region 212 and the third doped region 221 can be in direct contact.

[0069] In some embodiments, the first sub-cell 210 further includes: a first electrode 214 disposed on the second surface 242 and connected to the first doped region 211; a second electrode 215 disposed on the second surface 242 and connected to the second doped region 212; the second sub-cell 220 further includes: a third electrode 224 disposed on the second surface 242 and connected to the third doped region 221; a fourth electrode 225 disposed on the second surface 242 and connected to the fourth doped region 222; the second electrode 215 and the third electrode 224 are connected. The first electrode 214 is led out as one electrode (e.g., a positive or negative electrode) in the solar cell 200, and the fourth electrode 225 is led out as another electrode (e.g., a negative or positive electrode) in the solar cell 200.

[0070] Here, the materials for the first electrode 214, the second electrode 215, the third electrode 224, and the fourth electrode 225 can all be referenced. Figure 1 The relevant statements will not be repeated here.

[0071] In some embodiments, the solar cell 200 further includes a first passivation layer 250, which covers a first surface 241 of the cell substrate 240.

[0072] In some embodiments, the solar cell 200 further includes a second passivation layer 260, which covers the second surface 242 of the cell substrate 240. The second passivation layer 260 may also cover the surface of the N-type silicon wafer exposed by the first gap region 213, and the surface of the N-type silicon wafer exposed by the second gap region 223.

[0073] Here, the materials of the first passivation layer 250 and the second passivation layer 260 can both be referenced. Figure 1 The relevant statements will not be repeated here.

[0074] In this embodiment, firstly, without the need for physical cutting and slicing, electrically independent sub-cells are formed in different regions by optimizing the patterning scheme and the independent metallization design of different areas of the battery. The first sub-cell 210 and the second sub-cell 220, arranged adjacent to each other along the D2 direction, are connected in series. The second doped region 212 in the first sub-cell 210 and the third doped region 221 in the second sub-cell 220 are in direct contact, thereby achieving high voltage and low current output of the solar cell 200, reducing ohmic losses of the solar cell 200 and its modules, and improving the efficiency of the solar cell 200 and its modules. Secondly, it eliminates the need to form an isolation region between the first sub-cell 210 and the second sub-cell 220, increasing the patterning process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 200 due to ineffective passivation of the isolation region. Thirdly, since physical cutting and slicing are not required, laser cutting steps and related equipment can be eliminated; and since no additional cutting surfaces are introduced, no additional edge recombination is generated, eliminating edge passivation steps and related equipment. Fourthly, eliminating the need to form an isolation region reduces the occupied area of ​​the solar cell 200.

[0075] In some embodiments, the solar cell includes a back contact (BC) cell, such as at least one of an interdigitated BC (IBC) cell, a tunnel oxide passivated back contact cell, a heterojunction back contact cell, and a hybrid passivated back contact cell.

[0076] Here, the solar cells provided in the embodiments of this disclosure are applicable to BC cells, including but not limited to IBC cells, TBC cells, HBC cells, and hybrid passivated BC cells that combine TBC and HBC structures.

[0077] refer to Figure 3 and Figure 4 , Figure 3 and Figure 4 These are schematic diagrams of the D2D3 cross-sectional structure of the solar cells provided in the third and fourth embodiments of this disclosure, respectively. The following will be combined with... Figure 3 The specific structures of the first electrode 314, the second electrode 315, the third electrode 324, and the fourth electrode 325 are described; and in conjunction with Figure 4 The specific structures of the fifth electrode 334 and the sixth electrode 335 are described below.

[0078] like Figure 3 As shown, in some embodiments, the first electrode 314 includes a plurality of first conductive structures 316 extending along the D2 direction; the second electrode 315 includes a plurality of second conductive structures 317 extending along the D2 direction; the first conductive structures 316 and the second conductive structures 317 are alternately arranged along the D3 direction (i.e., the conductive structures of the P-type doped region and the N-type doped region in the first sub-cell 310 are alternately arranged along the D3 direction); the third electrode 324 includes a plurality of third conductive structures 326 extending along the D2 direction; the fourth electrode 325 includes a plurality of fourth conductive structures 327 extending along the D2 direction; the third conductive structures 326 and the fourth conductive structures 327 are alternately arranged along the D3 direction (i.e., the conductive structures of the P-type doped region and the N-type doped region in the second sub-cell 320 are alternately arranged along the D3 direction); the second conductive structures 317 and the third conductive structures 326 are arranged along the D2 direction and in contact with each other, and the first conductive structures 316 and the fourth conductive structures 327 are arranged along the D2 direction. Figure 3 The dashed line in the middle indicates the dividing line between the first sub-cell 310 (i.e., the upper sub-cell) and the second sub-cell 320 (i.e., the lower sub-cell) in the solar cell 300.

[0079] Here, there may be no isolation region between the second conductive structure 317 and the third conductive structure 326, meaning they can be in direct contact. The second conductive structure 317 in the second electrode 315 of the first sub-cell 310 and the third conductive structure 326 in the third electrode 324 of the second sub-cell 320 are connected to achieve a series connection between the first sub-cell 310 and the second sub-cell 320. The first electrode 314 is led out as one electrode (e.g., a positive or negative electrode) of the solar cell 300, and the fourth electrode 325 is led out as another electrode (e.g., a positive or negative electrode) of the solar cell 300. Thus, firstly, it is unnecessary to form an isolation region between the second conductive structure 317 and the third conductive structure 326, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 300 due to ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 300.

[0080] In some embodiments, the first conductive structure 316 and the second conductive structure 317 may each include a first main gate electrode and a second main gate electrode. The first main gate electrode and the second main gate electrode are used to collect charge carriers in the first doped region and the second doped region, respectively. Since the types of charge carriers in the first doped region and the second doped region are different, the polarities of the first main gate electrode and the second main gate electrode are different.

[0081] In some embodiments, the third conductive structure 326 and the fourth conductive structure 327 may each include a third main gate electrode and a fourth main gate electrode. The third and fourth main gate electrodes are used to collect charge carriers in the third and fourth doped regions, respectively. Since the types of charge carriers in the third and fourth doped regions are different, the polarities of the third and fourth main gate electrodes are different.

[0082] In some embodiments, the first conductive structure 316 and the second conductive structure 317 may respectively include a first solder strip and a second solder strip, and the third conductive structure 326 and the fourth conductive structure 327 may respectively include a third solder strip and a fourth solder strip. Thus, the solar cell 300 can also be designed as a grid-less BC cell.

[0083] In some embodiments, the first electrode 314 further includes: a plurality of first gate line structures 318 extending along the D3 direction; the second electrode 315 further includes: a plurality of second gate line structures 319 extending along the D3 direction, wherein the first gate line structures 318 and the second gate line structures 319 are alternately arranged along the D2 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the first sub-cell 310 are alternately arranged along the D2 direction); the plurality of first gate line structures 318 arranged along the D2 direction are connected to the same first conductive structure 316, and the plurality of second gate line structures 319 arranged along the D2 direction are connected to the same second conductive structure 317; the third electrode 324 further includes: The fourth electrode 325 further includes multiple third gate line structures 328 extending along the D3 direction; the third gate line structures 328 and the fourth gate line structures 329 are arranged alternately along the D2 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the second sub-cell 320 are arranged alternately along the D2 direction); the multiple third gate line structures 328 arranged along the D2 direction are connected to the same third conductive structure 326, and the multiple fourth gate line structures 329 arranged along the D2 direction are connected to the same fourth conductive structure 327; the second gate line structure 319 and the third gate line structure 328 are arranged along the D2 direction and are in contact with each other.

[0084] Here, there may be no isolation region between the second grid line structure 319 and the third grid line structure 328 arranged along the D2 direction, meaning that the second grid line structure 319 and the third grid line structure 328 can be in direct contact. The second grid line structure 319 in the second electrode 315 of the first sub-cell 310 and the third grid line structure 328 in the third electrode 324 of the second sub-cell 320 are connected to achieve a series connection between the first sub-cell 310 and the second sub-cell 320. Thus, firstly, it eliminates the need to form an isolation region between the second grid line structure 319 and the third grid line structure 328, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 300 caused by ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 300.

[0085] In some embodiments, the first gate line structure 318 and the second gate line structure 319 may each include a first sub-gate electrode and a second sub-gate electrode; wherein the first sub-gate electrode is used to connect the first doped region and the first main gate electrode, and the second sub-gate electrode is used to connect the second doped region and the second main gate electrode. The first sub-gate electrode and the second sub-gate electrode are used to collect charge carriers in the first doped region and the second doped region, respectively. Since the types of charge carriers in the first doped region and the second doped region are different, the polarities of the first sub-gate electrode and the second sub-gate electrode are different.

[0086] In some embodiments, the third gate line structure 328 and the fourth gate line structure 329 may each include a third sub-gate electrode and a fourth sub-gate electrode; wherein the third sub-gate electrode is used to connect the third doped region and the third main gate electrode, and the fourth sub-gate electrode is used to connect the fourth doped region and the fourth main gate electrode. The third sub-gate electrode and the fourth sub-gate electrode are used to collect charge carriers in the third doped region and the fourth doped region, respectively. Since the types of charge carriers in the third doped region and the fourth doped region are different, the polarities of the third sub-gate electrode and the fourth sub-gate electrode are different.

[0087] In some embodiments, the first sub-cell 310 may include 5 to 30 first main grid electrodes, which may be connected to 30 to 200 first sub-grid electrodes; the first sub-cell 310 may include 5 to 30 second main grid electrodes, which may be connected to 30 to 200 second sub-grid electrodes.

[0088] In some embodiments, the second sub-cell 320 may include 5 to 30 third main gate electrodes, which may be connected to 30 to 200 third sub-gate electrodes; the second sub-cell 320 may include 5 to 30 fourth main gate electrodes, which may be connected to 30 to 200 fourth sub-gate electrodes.

[0089] In some embodiments, the first electrode 314 and the second electrode 315 included in the first sub-cell 310 may form interdigitated electrodes; the third electrode 324 and the fourth electrode 325 included in the second sub-cell 320 may form interdigitated electrodes.

[0090] In some embodiments, the process for forming interdigitated electrodes may include, but is not limited to, laser patterning, chemical etching, screen printing, electroplating, or lamination.

[0091] Combination Figure 3 As shown, the second conductive structure 317 (e.g., the main grid electrode of the N-type doped region) in the second electrode 315 of the first sub-cell 310 and the third conductive structure 326 (e.g., the main grid electrode of the P-type doped region) in the third electrode 324 of the second sub-cell 320 are in direct contact. The second grid line structure 319 (e.g., the sub-grid electrode of the N-type doped region) in the second electrode 315 of the first sub-cell 310 and the third grid line structure 328 (e.g., the sub-grid electrode of the P-type doped region) in the third electrode 324 of the second sub-cell 320 are in direct contact, thereby achieving a series connection between the first sub-cell 310 and the second sub-cell 320. Thus, by setting the first sub-cell 310 and the second sub-cell 320 in series connection, the output voltage of the solar cell 300 can be increased to twice its original value, and the current in the solar cell 300 can be reduced to half its original value.

[0092] like Figure 4 As shown, in some embodiments, the battery substrate further includes: a fifth doped region, a sixth doped region, and a third gap region located between the fifth and sixth doped regions. The fifth doped region has a first doping type, and the sixth doped region has a second doping type. The second surface exposes the fifth and sixth doped regions. The third sub-cell 330 includes: a fifth doped region, a sixth doped region, and a third gap region; a fifth electrode 334 disposed on the second surface and connected to the fifth doped region; a sixth electrode 335 disposed on the second surface and connected to the sixth doped region; a fourth electrode 325 connected to the fifth electrode 334; and a second sub-cell 320 located between the first sub-cell 310 and the third sub-cell 330, wherein the first sub-cell 310, the second sub-cell 320, and the third sub-cell 330 are connected in series. Figure 4 The dashed line in the middle indicates the dividing line between the first sub-cell 310 (i.e., the upper sub-cell) and the second sub-cell 320 (i.e., the middle sub-cell) in the solar cell 300, as well as the dividing line between the second sub-cell 320 (i.e., the middle sub-cell) and the third sub-cell 330 (i.e., the lower sub-cell).

[0093] Here, for the solar cell 300, the second electrode 315 and the third electrode 324 are connected, and the fourth electrode 325 and the fifth electrode 334 are connected to realize the series connection between the first sub-cell 310, the second sub-cell 320 and the third sub-cell 330; the first electrode 314 is led out as one electrode (e.g., positive or negative electrode) in the solar cell 300, and the sixth electrode 335 is led out as another electrode (e.g., negative or positive electrode) in the solar cell 300.

[0094] In some embodiments, the fifth electrode 334 and the sixth electrode 335 may include conductive materials, such as metallic materials.

[0095] In some specific embodiments, the fifth electrode 334 can be an electrode of a P-type doped region, and the sixth electrode 335 can be an electrode of an N-type doped region.

[0096] In some embodiments, the fourth doped region and the fifth doped region are arranged adjacent to each other along the D2 direction.

[0097] In some embodiments, the fourth doped region and the fifth doped region are in contact.

[0098] Here, there may be no isolation region between the fourth and fifth doped regions arranged adjacent to each other along the D2 direction, that is, the fourth and fifth doped regions can be in direct contact.

[0099] In some embodiments, the fifth electrode 334 includes a plurality of fifth conductive structures 336 extending along the D2 direction; the sixth electrode 335 includes a plurality of sixth conductive structures 337 extending along the D2 direction; wherein the fifth conductive structures 336 and the sixth conductive structures 337 are arranged alternately along the D3 direction (i.e., the conductive structures of the P-type doped region and the conductive structures of the N-type doped region in the third sub-cell 330 are arranged alternately along the D3 direction); the fourth conductive structure 327 is located between the first conductive structure 316 and the fifth conductive structure 336 and the fourth conductive structure 327 and the fifth conductive structure 336 are in contact; and the third conductive structure 326 is located between the second conductive structure 317 and the sixth conductive structure 337.

[0100] Here, there may be no isolation region between the fourth conductive structure 327 and the fifth conductive structure 336, meaning they can be in direct contact. The fourth conductive structure 327 in the fourth electrode 325 of the second sub-cell 320 and the fifth conductive structure 336 in the fifth electrode 334 of the third sub-cell 330 are connected to achieve a series connection between the second sub-cell 320 and the third sub-cell 330. Thus, firstly, it eliminates the need for an isolation region between the fourth conductive structure 327 and the fifth conductive structure 336, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 300 due to ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 300.

[0101] In some embodiments, the fifth conductive structure 336 and the sixth conductive structure 337 may each include a fifth main gate electrode and a sixth main gate electrode. The fifth and sixth main gate electrodes are used to collect charge carriers in the fifth and sixth doped regions, respectively. Since the types of charge carriers in the fifth and sixth doped regions are different, the polarities of the fifth and sixth main gate electrodes are different.

[0102] In some embodiments, the fifth conductive structure 336 and the sixth conductive structure 337 may respectively include a fifth solder strip and a sixth solder strip. Thus, the solar cell can also be designed as a grid-less BC cell.

[0103] In some embodiments, the fifth electrode 334 further includes a plurality of fifth gate line structures 338 extending along the D3 direction; the sixth electrode 335 further includes a plurality of sixth gate line structures 339 extending along the D3 direction, wherein the fifth gate line structures 338 and the sixth gate line structures 339 are alternately arranged along the D2 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the third sub-cell 330 are alternately arranged along the D2 direction); wherein the plurality of fifth gate line structures 338 arranged along the D2 direction are connected to the same fifth conductive structure 336, and the plurality of sixth gate line structures 339 arranged along the D2 direction are connected to the same sixth conductive structure 337; the fourth gate line structure 329 and the fifth gate line structure 338 are arranged along the D2 direction and are in contact with each other.

[0104] Here, there is no isolation region between the fourth grid line structure 329 and the fifth grid line structure 338 arranged along the D2 direction; that is, the fourth grid line structure 329 and the fifth grid line structure 338 can be in direct contact. The fourth grid line structure 329 in the fourth electrode 325 of the second sub-cell 320 and the fifth grid line structure 338 in the fifth electrode 334 of the third sub-cell 330 are connected to achieve a series connection between the second sub-cell 320 and the third sub-cell 330. Thus, firstly, it is unnecessary to form an isolation region between the fourth grid line structure 329 and the fifth grid line structure 338, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 300 caused by ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 300.

[0105] In some embodiments, the fifth gate line structure 338 and the sixth gate line structure 339 may each include a fifth sub-gate electrode and a sixth sub-gate electrode; wherein the fifth sub-gate electrode is used to connect the fifth doped region and the fifth main gate electrode, and the sixth sub-gate electrode is used to connect the sixth doped region and the sixth main gate electrode. The fifth sub-gate electrode and the sixth sub-gate electrode are used to collect charge carriers in the fifth doped region and the sixth doped region, respectively. Since the types of charge carriers in the fifth doped region and the sixth doped region are different, the polarities of the fifth sub-gate electrode and the sixth sub-gate electrode are different.

[0106] In some embodiments, the third sub-cell 330 may include 5 to 30 third main grid electrodes, which may be connected to 30 to 200 third sub-grid electrodes.

[0107] In some embodiments, the fifth electrode 334 and the sixth electrode 335 included in the third sub-cell 330 may form interdigitated electrodes.

[0108] Combination Figure 4 As shown, the fourth conductive structure 327 (e.g., the main grid electrode of the N-type doped region) in the fourth electrode 325 of the second sub-cell 320 and the fifth conductive structure 336 (e.g., the main grid electrode of the P-type doped region) in the fifth electrode 334 of the third sub-cell 330 are in direct contact. That is, the fourth grid line structure 329 (e.g., the sub-grid electrode of the N-type doped region) in the fourth electrode 325 of the second sub-cell 320 and the fifth grid line structure 338 (e.g., the sub-grid electrode of the P-type doped region) in the fifth electrode 334 of the third sub-cell 330 are in direct contact, thereby achieving a series connection between the second sub-cell 320 and the third sub-cell 330. Thus, by setting the first sub-cell 310, the second sub-cell 320, and the third sub-cell 330 in series connection, the output voltage of the solar cell 300 can be increased to three times its original value, and the current in the solar cell 300 can be reduced to one-third of its original value.

[0109] refer to Figure 5 and Figure 6 , Figure 5 and Figure 6 These are schematic diagrams of the D2D3 cross-sectional structure of the solar cells provided in the fifth and sixth embodiments of this disclosure, respectively. The following will be combined with... Figure 5 The specific structures of the first electrode 414, the second electrode 415, the third electrode 424, and the fourth electrode 425 are described; and in conjunction with Figure 6 The specific structures of the fifth electrode 434 and the sixth electrode 435 are described below.

[0110] like Figure 5 As shown, in some embodiments, the solar cell 400 includes: a first sub-cell 410 and a second sub-cell 420 arranged in series along the D2 direction. The first sub-cell 410 includes a first electrode 414 and a second electrode 415. The first electrode 414 includes a first conductive structure 416 extending along the D3 direction; the second electrode 415 includes a second conductive structure 417 extending along the D3 direction; wherein the first conductive structure 416 and the second conductive structure 417 are arranged along the D2 direction (i.e., the conductive structures of the P-type doped region and the N-type doped region in the first sub-cell 410 are arranged along the D2 direction); the second sub-cell 420... The second sub-cell 420 includes a third electrode 424 and a fourth electrode 425. The third electrode 424 includes a third conductive structure 426 extending along the D3 direction; the fourth electrode 425 includes a fourth conductive structure 427 extending along the D3 direction. The third conductive structure 426 and the fourth conductive structure 427 are arranged along the D2 direction (i.e., the conductive structures of the P-type doped region and the N-type doped region in the second sub-cell 420 are arranged along the D2 direction). The second conductive structure 417 and the third conductive structure 426 are located between the first conductive structure 416 and the fourth conductive structure 427, and the second conductive structure 417 and the third conductive structure 426 are in contact. Figure 5 The dashed line in the middle indicates the dividing line between the first sub-cell 410 (i.e., the left sub-cell) and the second sub-cell 420 (i.e., the right sub-cell) in the solar cell 400.

[0111] Here, there may be no isolation region between the second conductive structure 417 and the third conductive structure 426, meaning they can be in direct contact. The second conductive structure 417 in the second electrode 415 of the first sub-cell 410 and the third conductive structure 426 in the third electrode 424 of the second sub-cell 420 are connected to achieve a series connection between the first sub-cell 410 and the second sub-cell 420. The first electrode 414 is led out as one electrode (e.g., a positive or negative electrode) in the solar cell 400, and the fourth electrode 425 is led out as another electrode (e.g., a positive or negative electrode) in the solar cell 400. Thus, firstly, it eliminates the need to form an isolation region between the second conductive structure 417 and the third conductive structure 426, increasing the patterned process window, reducing the complexity of the manufacturing process, and avoiding performance degradation of the solar cell 400 due to ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 400.

[0112] In some embodiments, the first conductive structure 416, the second conductive structure 417, the third conductive structure 426, and the fourth conductive structure 427 may include a main gate electrode.

[0113] In some embodiments, the first conductive structure 416, the second conductive structure 417, the third conductive structure 426, and the fourth conductive structure 427 may include solder strips. Thus, the solar cell 400 can also be designed as a grid-less BC cell.

[0114] In some embodiments, the first electrode 414 further includes a plurality of first gate line structures 418 extending along the D2 direction; the second electrode 415 further includes a plurality of second gate line structures 419 extending along the D2 direction, wherein the first gate line structures 418 and the second gate line structures 419 are alternately arranged along the D3 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the first sub-cell 410 are alternately arranged along the D3 direction); wherein the plurality of first gate line structures 418 arranged along the D3 direction are connected to the same first conductive structure 416, and the plurality of second gate line structures 419 arranged along the D3 direction are connected to the same second conductive structure 416. 7. Connection; the third electrode 424 further includes: a plurality of third gate line structures 428 extending along the D2 direction; the fourth electrode 425 further includes: a plurality of fourth gate line structures 429 extending along the D2 direction, the third gate line structures 428 and the fourth gate line structures 429 are alternately arranged along the D3 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the second sub-cell 420 are alternately arranged along the D2 direction); wherein, the plurality of third gate line structures 428 arranged along the D3 direction are connected to the same third conductive structure 426, and the plurality of fourth gate line structures 429 arranged along the D3 direction are connected to the same fourth conductive structure 427.

[0115] In some embodiments, the first gate line structure 418, the second gate line structure 419, the third gate line structure 428, and the fourth gate line structure 429 may include a sub-gate electrode.

[0116] Here, the number of main grid electrodes included in the first sub-cell 410 and the second sub-cell 420, and the number of sub-grid electrodes connected to each main grid electrode, can be referenced. Figure 3 The relevant statements will not be repeated here.

[0117] Combination Figure 5 As shown, the second conductive structure 417 (e.g., the main grid electrode of the N-type doped region) in the second electrode 415 of the first sub-cell 410 and the third conductive structure 426 (e.g., the main grid electrode of the P-type doped region) in the second sub-cell 420 are in direct contact to achieve a series connection between the first sub-cell 410 and the second sub-cell 420. Thus, by setting the first sub-cell 410 and the second sub-cell 420 in series connection, the output voltage of the solar cell 400 can be increased to twice its original value, and the current in the solar cell 400 can be reduced to half its original value.

[0118] like Figure 6 As shown, in some embodiments, the battery substrate further includes: a fifth doped region, a sixth doped region, and a third gap region located between the fifth and sixth doped regions, wherein the fifth doped region has a first doping type, the sixth doped region has a second doping type, and the second surface exposes the fifth and sixth doped regions; the third sub-cell 330 includes: the fifth doped region, the sixth doped region, and the third gap region; a fifth electrode 434 disposed on the second surface and connected to the fifth doped region; and a sixth electrode 435 disposed on the second surface and connected to the sixth doped region; wherein the fourth electrode 425 and the fifth electrode 434 are connected. Here, Figure 6 The dashed line in the middle indicates the dividing line between the first sub-cell 410 (i.e., the left sub-cell) and the second sub-cell 420 (i.e., the middle sub-cell) in the solar cell 400, as well as the dividing line between the second sub-cell 420 (i.e., the middle sub-cell) and the third sub-cell 430 (i.e., the right sub-cell).

[0119] Here, for the solar cell 400, the second electrode 415 and the third electrode 424 are connected, and the fourth electrode 425 and the fifth electrode 434 are connected to realize the series connection between the first sub-cell 410, the second sub-cell 420 and the third sub-cell 430; the first electrode 414 is led out as one electrode (e.g., positive or negative electrode) in the solar cell 400, and the sixth electrode 435 is led out as another electrode (e.g., negative or positive electrode) in the solar cell 400.

[0120] In some embodiments, the fifth electrode 434 and the sixth electrode 435 may comprise conductive materials, such as metallic materials.

[0121] In some specific embodiments, the fifth electrode 434 can be an electrode of a P-type doped region, and the sixth electrode 435 can be an electrode of an N-type doped region.

[0122] In some embodiments, the fourth doped region and the fifth doped region are arranged adjacent to each other along the D2 direction.

[0123] In some embodiments, the fourth doped region and the fifth doped region are in contact.

[0124] Here, there may be no isolation region between the fourth and fifth doped regions arranged adjacent to each other along the D2 direction, that is, the fourth and fifth doped regions can be in direct contact.

[0125] In some embodiments, the fifth electrode 434 includes a fifth conductive structure 436 extending along the D3 direction; the sixth electrode 435 includes a sixth conductive structure 437 extending along the D3 direction; wherein the fifth conductive structure 436 and the sixth conductive structure 437 are arranged along the D2 direction (i.e., the conductive structures of the P-type doped region and the N-type doped region in the third sub-cell 430 are arranged along the D2 direction); wherein the fourth conductive structure 427 and the fifth conductive structure 436 are located between the third conductive structure 426 and the sixth conductive structure 437, and the fourth conductive structure 427 and the fifth conductive structure 436 are in contact.

[0126] Here, there may be no isolation region between the fourth conductive structure 427 and the fifth conductive structure 436, meaning they can be in direct contact. The fourth conductive structure 427 in the fourth electrode 425 of the second sub-cell 420 and the fifth conductive structure 436 in the fifth electrode 434 of the third sub-cell 430 are connected to achieve a series connection between the second sub-cell 420 and the third sub-cell 430. Thus, firstly, it eliminates the need for an isolation region between the fourth conductive structure 427 and the fifth conductive structure 436, increasing the patterned process window, reducing manufacturing complexity, and avoiding performance degradation of the solar cell 400 due to ineffective passivation of the isolation region. Secondly, eliminating the need for an isolation region reduces the occupied area of ​​the solar cell 400.

[0127] In some embodiments, the fifth conductive structure 436 and the sixth conductive structure 437 may include a main gate electrode.

[0128] In some embodiments, the fifth conductive structure 436 and the sixth conductive structure 437 may include solder strips. Thus, the solar cell 400 can also be designed as a gridless BC cell.

[0129] In some embodiments, the fifth electrode 434 further includes a plurality of fifth gate line structures 438 extending along the D2 direction; the sixth electrode 435 further includes a plurality of sixth gate line structures 439 extending along the D2 direction, wherein the fifth gate line structures 438 and the sixth gate line structures 439 are arranged alternately along the D3 direction (i.e., the gate line structures of the P-type doped region and the gate line structures of the N-type doped region in the third sub-cell 430 are arranged alternately along the D3 direction); wherein the plurality of fifth gate line structures 438 arranged along the D3 direction are connected to the same fifth conductive structure 436, and the plurality of sixth gate line structures 439 arranged along the D3 direction are connected to the same sixth conductive structure 437.

[0130] In some embodiments, the fifth gate line structure 438 and the sixth gate line structure 439 may include a sub-gate electrode.

[0131] Here, the number of main grid electrodes included in the third sub-cell 430, and the number of sub-grid electrodes connected to each main grid electrode, can be referenced. Figure 4 The relevant statements will not be repeated here.

[0132] Combination Figure 6 As shown, the fourth conductive structure 427 (e.g., the main grid electrode of the N-type doped region) in the fourth electrode 425 of the second sub-cell 420 and the fifth conductive structure 436 (e.g., the main grid electrode of the P-type doped region) in the fifth electrode 434 of the third sub-cell 430 are in direct contact to achieve a series connection between the second sub-cell 420 and the third sub-cell 430. Thus, by setting the first sub-cell 410, the second sub-cell 420, and the third sub-cell 430 in series connection, the output voltage of the solar cell 400 can be increased to three times its original value, and the current in the solar cell 400 can be reduced to one-third of its original value.

[0133] In summary, this invention provides a method for fabricating independent sub-cells on a whole silicon solar cell wafer without physical segmentation of the cells, relying solely on optimized patterning and metallization design. These sub-cells are then connected in series to achieve high voltage and current output in BC solar cells. Since physical segmentation is eliminated, laser cutting steps and equipment are removed; furthermore, the absence of additional cutting surfaces prevents edge recombination, thus eliminating the need for edge passivation steps and equipment. Furthermore, compared to previously published techniques that segment and connect entire BC solar cells, this technology eliminates the need for isolation regions. The application of this technology will significantly simplify the fabrication process of BC solar cells and modules, while reducing manufacturing costs, and will undoubtedly be widely adopted by the crystalline silicon solar cell industry.

[0134] In some embodiments, the battery substrate further includes: a seventh doped region, an eighth doped region, and a fourth gap region located between the seventh doped region and the eighth doped region, the seventh doped region having a first doping type, the eighth doped region having a second doping type, and a second surface exposing the seventh doped region and the eighth doped region; the fourth sub-cell includes: the seventh doped region, the eighth doped region, and the fourth gap region; a seventh electrode disposed on the second surface and connected to the seventh doped region; an eighth electrode disposed on the second surface and connected to the eighth doped region; a sixth electrode and the seventh electrode are connected, the second sub-cell and the third sub-cell are both located between the first sub-cell and the fourth sub-cell, and the first sub-cell, the second sub-cell, the third sub-cell, and the fourth sub-cell are connected in series.

[0135] Here, for the solar cell, the second electrode and the third electrode are connected, the fourth electrode and the fifth electrode are connected, and the fifth electrode and the sixth electrode are connected to achieve a series connection between the first sub-cell, the second sub-cell, the third sub-cell, and the fourth sub-cell; the first electrode is led out as one electrode (e.g., the positive or negative electrode) in the solar cell, and the eighth electrode is led out as another electrode (e.g., the negative or positive electrode) in the solar cell.

[0136] In some embodiments, the seventh and eighth electrodes may comprise conductive materials, such as metallic materials.

[0137] In some specific embodiments, the seventh electrode can be an electrode of a P-type doped region, and the eighth electrode can be an electrode of an N-type doped region.

[0138] In some embodiments, the sixth doped region and the seventh doped region are arranged adjacent to each other along the D2 direction.

[0139] In some embodiments, the sixth doped region and the seventh doped region are in contact.

[0140] Here, there may be no isolation region between the sixth and seventh doped regions arranged adjacent to each other along the D2 direction, that is, the sixth and seventh doped regions can be in direct contact.

[0141] In some embodiments, a greater number of sub-cells connected in series can be formed on the same battery substrate, for example, four, five, six, or even more sub-cells connected in series. Figure 1 , Figure 2 , Figure 3 and Figure 5 As shown, the first, second, third, and fifth embodiments of this disclosure all use a solar cell comprising three sub-cells connected in series as an example for illustration; combined with Figure 4 and Figure 6As shown, the fourth and sixth embodiments of this disclosure are illustrated using a solar cell comprising three sub-cells connected in series as an example, which does not constitute a limitation on the scope of protection of this disclosure.

[0142] refer to Figure 7 , Figure 7 This is a schematic block diagram of a photovoltaic module provided in an embodiment of this disclosure. Figure 7 As shown, this disclosure provides a photovoltaic module 500, which includes a solar cell 502 as described in the above technical solution. Here, Figure 7 The solar cell 502 shown in the diagram can be Figure 1 The solar cell 100 shown in the diagram Figure 2 The solar cell 200 shown in the diagram Figure 3 and Figure 4 The solar cell 300 shown in the diagram Figure 5 and Figure 6 The solar cell 400 is shown in the diagram.

[0143] In some embodiments, the photovoltaic module 500 may include a plurality of solar cells 502 connected to form a cell string.

[0144] In some embodiments, the photovoltaic module 500 further includes an encapsulating adhesive layer covering the surface of the solar cell 502.

[0145] In some embodiments, the encapsulating adhesive layer may include a first encapsulating layer and a second encapsulating layer, wherein the first encapsulating layer covers the front side of the solar cell 502 and the second encapsulating layer covers the back side of the solar cell 502.

[0146] In some embodiments, the encapsulating adhesive layer may include, but is not limited to, organic encapsulating adhesive films such as polyvinyl butyral (PVB) film, ethylene-vinyl acetate (EVA) film, poly(ethylene octene) elastomer (POE) film, or polyethylene terephthalate (PET) film.

[0147] In some embodiments, the photovoltaic module 500 further includes a cover plate that covers the surface of the encapsulating adhesive layer away from the solar cell 502.

[0148] In some embodiments, the cover plate may include, but is not limited to, a glass cover plate, a plastic cover plate, or other cover plate with light-transmitting function. The cover plate may include a first cover plate and a second cover plate, with the first cover plate covering the first encapsulation layer and the second cover plate covering the second encapsulation layer. Here, the surface of the cover plate facing the encapsulation film may be an uneven surface or a textured surface including multiple raised structures, thereby improving the utilization rate of the incident optical fiber.

[0149] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0150] The above description is merely a preferred embodiment of this disclosure and does not limit the patent scope of this disclosure. Any equivalent structural transformations made using the contents of this specification and drawings under the inventive concept of this disclosure, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this disclosure.

Claims

1. A solar cell, said solar cell (100, 200, 300, 400, 502) comprising: A battery substrate (140, 240) includes a first surface (141, 241) and a second surface (142, 242) disposed opposite to each other along a first direction; The battery substrate (140, 240) includes: A first doped region (111, 211), a second doped region (112, 212), and a first gap region (113, 213) located between the first doped region (111, 211) and the second doped region (112, 212). The first doped region (111, 211) has a first doping type, and the second doped region (112, 212) has a second doping type. The first doping type and the second doping type are different. The second surface (142, 242) exposes the first doped region (111, 211) and the second doped region (112, 212). The first sub-cell (110, 210, 310, 410) includes the first doped region (111, 211), the second doped region (112, 212), and the first gap region (113, 213). A third doped region (121, 221), a fourth doped region (122, 222), and a second gap region (123, 223) located between the third doped region (121, 221) and the fourth doped region (122, 222), wherein the third doped region (121, 221) has the first doping type, and the fourth doped region (122, 222) has the second doping type. A second surface (142, 242) exposes the third doped region (121, 221) and the fourth doped region (122, 222). A second sub-cell (120, 220, 320, 420) includes the third doped region. (121, 221), the fourth doped region (122, 222), and the second gap region (123, 223); the first sub-cell (110, 210, 310, 410) and the second sub-cell (120, 220, 320, 420) are arranged along the second direction, and the first sub-cell (110, 210, 310, 410) and the second sub-cell (120, 220, 320, 420) are connected in series, and the first direction and the second direction are perpendicular to each other; the second doped region (112, 212) and the third doped region (121, 221) are arranged adjacent to each other along the second direction.

2. The solar cell according to claim 1, wherein, The second doped region (112, 212) and the third doped region (121, 221) are in contact.

3. The solar cell according to claim 1 or 2, wherein, The first sub-cell (110, 210, 310, 410) further includes: a first electrode (114, 214, 314, 414) disposed on the second surface (142, 242) and connected to the first doped region (111, 211); and a second electrode (115, 215, 315, 415) disposed on the second surface (142, 242) and connected to the second doped region (112, 212). The second sub-cell (120, 220, 320, 420) further includes: a third electrode (124, 224, 324, 424) disposed on the second surface (142, 242) and connected to the third doped region (121, 221); a fourth electrode (125, 225, 325, 425) disposed on the second surface (142, 242) and connected to the fourth doped region (122, 222); and the second electrode (115, 215, 315, 415) and the third electrode (124, 224, 324, 424) are connected.

4. The solar cell according to claim 3, wherein, The first electrode (114, 214, 314, 414) includes a plurality of first conductive structures (316, 416) extending along the second direction; the second electrode (115, 215, 315, 415) includes a plurality of second conductive structures (317, 417) extending along the second direction; the first conductive structures (316, 416) and the second conductive structures (317, 417) are arranged alternately along a third direction, and any two of the first direction, the second direction and the third direction are perpendicular to each other; The third electrode (124, 224, 324, 424) includes a plurality of third conductive structures (326, 426) extending along the second direction; the fourth electrode (125, 225, 325, 425) includes a plurality of fourth conductive structures (327, 427) extending along the second direction; the third conductive structures (326, 426) and the fourth conductive structures (327, 427) are arranged alternately along the third direction; the second conductive structure (317, 417) and the third conductive structure (326, 426) are arranged along the second direction and are in contact with each other, and the first conductive structure (316, 416) and the fourth conductive structure (327, 427) are arranged along the second direction.

5. The solar cell according to claim 4, wherein, The first electrode (114, 214, 314, 414) further includes: a plurality of first gate line structures (318, 418) extending along the third direction; the second electrode (115, 215, 315, 415) further includes: a plurality of second gate line structures (319, 419) extending along the third direction, wherein the first gate line structures (318, 418) and the second gate line structures (319, 419) are alternately arranged along the second direction; the plurality of first gate line structures (318, 418) arranged along the second direction are connected to the same first conductive structure (316, 416), and the plurality of second gate line structures (319, 419) arranged along the second direction are connected to the same second conductive structure (317, 417); The third electrode (124, 224, 324, 424) further includes: a plurality of third gate line structures (328, 428) extending along the third third direction; the fourth electrode (125, 225, 325, 425) further includes: a plurality of fourth gate line structures (329, 429) extending along the third third direction, the third gate line structures (328, 428) and the fourth gate line structures (329, 429) being alternately arranged along the second direction; the plurality of third gate line structures (328, 428) arranged along the second direction are connected to the same third conductive structure (326, 426), and the plurality of fourth gate line structures (329, 429) arranged along the second direction are connected to the same fourth conductive structure (327, 427); the second gate line structure (319, 419) and the third gate line structure (328, 428) are arranged along the second direction and are in contact with each other.

6. The solar cell according to claim 3, wherein, The first electrode (114, 214, 314, 414) includes a first conductive structure (316, 416) extending along a third direction; the second electrode (115, 215, 315, 415) includes a second conductive structure (317, 417) extending along the third direction; the first conductive structure (316, 416) and the second conductive structure (317, 417) are arranged along a second direction, and any two of the first direction, the second direction and the third direction are perpendicular to each other; The third electrode (124, 224, 324, 424) includes a third conductive structure (326, 426) extending along the third direction; the fourth electrode (125, 225, 325, 425) includes a fourth conductive structure (327, 427) extending along the third direction; the third conductive structure (326, 426) and the fourth conductive structure (327, 427) are arranged along the second direction; the second conductive structure (317, 417) and the third conductive structure (326, 426) are located between the first conductive structure (316, 416) and the fourth conductive structure (327, 427), and the second conductive structure (317, 417) and the third conductive structure (326, 426) are in contact.

7. The solar cell according to claim 6, wherein, The first electrode (114, 214, 314, 414) further includes: a plurality of first gate line structures (318, 418) extending along the second direction; the second electrode (115, 215, 315, 415) further includes: a plurality of second gate line structures (319, 419) extending along the second direction, wherein the first gate line structures (318, 418) and the second gate line structures (319, 419) are alternately arranged along the third direction; the plurality of first gate line structures (318, 418) arranged along the third direction are connected to the same first conductive structure (316, 416), and the plurality of second gate line structures (319, 419) arranged along the third direction are connected to the same second conductive structure (317, 417); The third electrode (124, 224, 324, 424) further includes: a plurality of third gate line structures (328, 428) extending along the second direction; the fourth electrode (125, 225, 325, 425) further includes: a plurality of fourth gate line structures (329, 429) extending along the second direction, wherein the third gate line structures (328, 428) and the fourth gate line structures (329, 429) are alternately arranged along the third direction; the plurality of third gate line structures (328, 428) arranged along the third direction are connected to the same third conductive structure (326, 426), and the plurality of fourth gate line structures (329, 429) arranged along the third direction are connected to the same fourth conductive structure (327, 427).

8. The solar cell according to any one of claims 3 to 7, wherein, The battery substrate (140, 240) further includes: a fifth doped region, a sixth doped region, and a third gap region located between the fifth doped region and the sixth doped region, the fifth doped region having the first doping type, the sixth doped region having the second doping type, and the second surface (142, 242) exposing the fifth doped region and the sixth doped region; The third sub-cell (330, 430) includes: the fifth doped region, the sixth doped region, and the third gap region; a fifth electrode (334, 434) disposed on the second surface (142, 242) and connected to the fifth doped region; a sixth electrode (335, 435) disposed on the second surface (142, 242) and connected to the sixth doped region; the fourth electrode (125, 225, 325, 425) and the fifth electrode (334, 434) are connected; the second sub-cell (120, 220, 320, 420) is located between the first sub-cell (110, 210, 310, 410) and the third sub-cell (330, 430), and the first sub-cell (110, 210, 310, 410), the second sub-cell (120, 220, 320, 420) and the third sub-cell (330, 430) are connected in series.

9. The solar cell according to claim 8, wherein, The battery substrate (140, 240) further includes: a seventh doped region, an eighth doped region, and a fourth gap region located between the seventh doped region and the eighth doped region, the seventh doped region having the first doping type, the eighth doped region having the second doping type, and the second surface (142, 242) exposing the seventh doped region and the eighth doped region. The fourth sub-cell includes: the seventh doped region, the eighth doped region, and the fourth gap region; a seventh electrode disposed on the second surface (142, 242) and connected to the seventh doped region; an eighth electrode disposed on the second surface (142, 242) and connected to the eighth doped region; a sixth electrode (335, 435) connected to the seventh electrode; the second sub-cell (120, 220, 320, 420) and the third sub-cell (330, 430) are both located between the first sub-cell (110, 210, 310, 410) and the fourth sub-cell, and the first sub-cell (110, 210, 310, 410), the second sub-cell (120, 220, 320, 420), the third sub-cell (330, 430) and the fourth sub-cell are connected in series.

10. The solar cell according to any one of claims 1 to 9, wherein, The solar cells (100, 200, 300, 400, 502) include at least one of interdigitated back contact cells, tunnel oxide passivated back contact cells, heterojunction back contact cells, and hybrid passivated back contact cells.

11. A photovoltaic module, the photovoltaic module (500) comprising: The solar cell (100, 200, 300, 400, 502) as claimed in any one of claims 1 to 10.

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