Cold thermal assisted processing apparatus and processing system suitable for aluminum based silicon carbide

Abstract

This application belongs to the field of ultra-precision machining of composite materials, specifically disclosing a cold and hot assisted machining device and system suitable for aluminum-based silicon carbide. The cold and hot assisted machining device includes: a low-temperature auxiliary unit, which applies a low-temperature cooling medium to the aluminum-based silicon carbide workpiece during the cutting process to form a low-temperature region within the workpiece; a laser auxiliary unit, which emits a laser beam to the workpiece during the cutting process, the laser beam penetrating the cutting edge of the tool to locally heat the workpiece to form a heat-affected zone within the low-temperature region; and a control unit, which controls the operation of the low-temperature auxiliary unit and the laser auxiliary unit to form a surface-heated, bottom-cooled temperature field on the surface of a portion of the machined area of ​​the workpiece. This application solves the problem that existing single-assisted machining methods cannot simultaneously meet the different processing requirements of aluminum matrix and silicon carbide particles, and significantly improves the surface machining quality of aluminum-based silicon carbide composite materials by organically combining the low-temperature auxiliary unit and the laser auxiliary unit.

Description

Technical Field

[0001] This application belongs to the field of ultra-precision machining of composite materials, and more specifically, relates to a cold and hot assisted machining device and machining system suitable for aluminum-based silicon carbide. Background Technology

[0002] Aluminum-based silicon carbide composites consist of a soft aluminum (Al) matrix and hard, brittle silicon carbide (SiC) reinforcing particles. Due to their excellent properties such as low coefficient of thermal expansion, high specific stiffness, and good chemical stability, they are widely used in aerospace optical systems (e.g., mirror blanks, lens holders) and electronic packaging. As these applications increasingly demand higher surface quality and precision for optical components, achieving high-precision machining of aluminum-based silicon carbide composites with high surface quality is of great significance.

[0003] Single-point diamond cutting is a common technique for achieving high-quality forming of difficult-to-machine materials. However, for heterogeneous composite materials such as aluminum-based silicon carbide, the unique structure of alternating hard and soft phases presents significant challenges to ultra-precision machining. During conventional cutting (OC), due to the significant differences in hardness, coefficient of thermal expansion, and other properties between the aluminum matrix and silicon carbide particles, their cooperative deformation ability is low, easily causing pull-out and fragmentation of silicon carbide particles and tearing of the aluminum matrix, resulting in serious defects such as micro-pits, micro-cracks, and scratches on the machined surface. In existing technologies, in-situ laser-assisted cutting (LAC) technology is used to machine hard and brittle materials. This technology softens the material by heating it with a laser, improving its plastic flowability. However, when this technology is directly applied to aluminum-based silicon carbide composite materials, although the high temperature generated by the laser can soften the silicon carbide particles, it also excessively softens the aluminum matrix, reducing the holding force of the aluminum matrix on the silicon carbide particles. This makes the particles more easily pressed in or slipped, and even peel off after machining, thus exacerbating surface damage. Conversely, if only low-temperature assisted cutting (CAC) is used, although the hardness of the aluminum matrix and the interfacial bonding force can be enhanced, the overall material hardness will increase, resulting in increased cutting force, increased machining difficulty, and the problem of removing the brittleness of silicon carbide particles cannot be solved.

[0004] Therefore, how to simultaneously resolve the contradiction between "soft matrix easily sticking to the tool and deforming" and "brittle removal of hard particles" in the processing of aluminum-based silicon carbide composite materials, and achieve high-quality plastic domain processing, is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] In response to the deficiencies or improvement needs of existing technologies, this application provides a cold and hot assisted processing device and processing system suitable for aluminum-based silicon carbide. It aims to solve the problem that existing single assisted processing methods cannot meet the different processing requirements of aluminum matrix and silicon carbide particles. By organically combining the low-temperature assisted unit and the laser assisted unit, a synergistic effect is generated, thereby significantly improving the surface quality of aluminum-based silicon carbide composite materials.

[0006] The above-mentioned technical objectives of this application are mainly achieved through the following technical solutions.

[0007] On the one hand, this application provides a cold and hot auxiliary processing apparatus suitable for aluminum-based silicon carbide, which includes: A low-temperature auxiliary unit is used to apply a low-temperature cooling medium to the aluminum-based silicon carbide workpiece to be processed during the cutting process of the cutting tool, so as to form a low-temperature region in the aluminum-based silicon carbide workpiece; A laser-assisted unit is used to emit a laser beam to the aluminum-based silicon carbide workpiece during the cutting process of the tool. The laser beam passes through the cutting edge of the tool to locally heat the aluminum-based silicon carbide workpiece to form a heat-affected zone in the low-temperature region. The control unit is used to control the low-temperature auxiliary unit and the laser auxiliary unit to work simultaneously or alternately to form a surface-heating and bottom-cooling temperature field on the surface of the partially processed area of ​​the aluminum-based silicon carbide workpiece. The heat-affected zone causes the temperature of the silicon carbide particles in the near-surface layer to rise rapidly and soften. The low-temperature region inhibits the diffusion of heat from the heat-affected zone to the subsurface layer, so that the interfacial bonding strength of the aluminum matrix in the subsurface layer is enhanced by maintaining the low temperature.

[0008] In a preferred embodiment of this application, in the cryogenic auxiliary unit, the cryogenic cooling medium is liquid nitrogen, which is directly sprayed through a nozzle onto the contact area between the cutting edge of the tool and the aluminum-based silicon carbide workpiece.

[0009] In a preferred embodiment of this application, the temperature range of the low-temperature region is 100K-233K.

[0010] In a preferred embodiment of this application, in the laser-assisted unit, the laser beam is a near-infrared continuous wave laser with a wavelength of 1064 nm.

[0011] In a preferred embodiment of this application, the power of the laser beam is less than or equal to 50W, and its spot diameter is less than 100μm.

[0012] In a preferred embodiment of this application, when the cryogenic auxiliary unit and the laser auxiliary unit work simultaneously, the focal point of the laser beam is located in front of or directly above the contact point between the rake face of the cutting tool and the aluminum-based silicon carbide workpiece, and the injection port of the cryogenic cooling medium is arranged to the side-rear or same side of the laser beam action area.

[0013] In a preferred embodiment of this application, when the cryogenic auxiliary unit and the laser auxiliary unit work alternately, the heating time of the laser beam accounts for 10%-80% and the cooling time of the cryogenic cooling medium accounts for 20%-90% in a single processing cycle, and the cryogenic cooling medium is used to start cooling again after the laser beam heating stops for 0.1s-2s.

[0014] In a preferred embodiment of this application, the cutting depth of the tool is less than or equal to 2 μm, the cutting speed is 500 mm / min-1000 mm / min, the rake angle of the tool is -35°, and the clearance angle is 10°.

[0015] In a preferred embodiment of this application, the volume fraction of silicon carbide particles in the aluminum-based silicon carbide workpiece is 30%-75%, and the size of the silicon carbide particles is 2μm-15μm.

[0016] On the other hand, this application also provides a processing system suitable for aluminum-based silicon carbide, comprising: The machine tool body is used to clamp aluminum-based silicon carbide workpieces and perform cutting motions. The cold and hot auxiliary processing device as described above.

[0017] In summary, compared with the prior art, the technical solutions conceived in this application have the following main technical advantages: The thermal assisted machining apparatus and system described in this application are suitable for surface cutting of aluminum-based silicon carbide workpieces. Through the assistance of a low-temperature auxiliary unit and a laser-assisted unit, a unique "surface-heated, bottom-cooled" temperature field is formed on the surface of a portion of the machining area of ​​the aluminum-based silicon carbide workpiece. The laser beam rapidly raises the temperature of the silicon carbide particles near the surface (approximately 4 μm depth) in this machining area, softening them. Laser beam heating effectively solves the problem of difficult plastic removal of silicon carbide particles. Meanwhile, the jetting of the low-temperature cooling medium inhibits heat diffusion to the subsurface, keeping the aluminum substrate at a low temperature. This enhances the hardness and interfacial bonding strength of the aluminum substrate, effectively suppressing excessive softening and tool sticking, and strengthening its holding force on the silicon carbide particles, preventing them from peeling off due to decreased interfacial bonding. The combined effect of these two systems makes the entire cutting process more inclined towards a uniform, shear-dominated plastic removal mode, thereby obtaining a high-quality machined surface free of microcracks and silicon carbide particle peeling. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the collaborative operation of each unit within the cold and hot assisted processing apparatus suitable for aluminum-based silicon carbide described in this application; Figure 2This is a schematic diagram of the cold and hot auxiliary processing apparatus for aluminum-based silicon carbide as described in this application; Figure 3 This is a schematic diagram of the structure of the processing system suitable for aluminum-based silicon carbide described in this application; Figure 4 Comparison images of the surface morphology obtained by different processing methods; Figure 5 Comparison of the microstructure of processed surfaces obtained by different processing methods; Figure 6 This is a comparison diagram of cutting forces under hot-cold assisted machining and pure laser assisted machining as described in this application; Figure 7 This is a map showing the atomic shear strain distribution under different processing methods as revealed by molecular dynamics simulations.

[0019] In all the accompanying drawings, the same reference numerals are used to denote the same elements or structures, wherein: 1. Cryogenic cooling medium supply device; 2. Cryogenic nozzle; 3. Cutting tool; 4. Laser emitting device; 5. Aluminum-based silicon carbide workpiece; 6. Fixture; 10. Low-temperature auxiliary unit; 20. Laser auxiliary unit; 30. Control unit. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0021] Implementation Method 1: This application provides a cold and hot auxiliary processing apparatus suitable for aluminum-based silicon carbide, such as... Figure 1 and Figure 2 As shown, it includes a cryogenic auxiliary unit 10, a laser auxiliary unit 20, and a control unit 30. The cryogenic auxiliary unit 10 is used to apply a cryogenic cooling medium to the aluminum-based silicon carbide workpiece to be processed during the cutting process, so as to form a cryogenic region within the aluminum-based silicon carbide workpiece. The laser auxiliary unit 20 is used to emit a laser beam to the aluminum-based silicon carbide workpiece during the cutting process. The laser beam passes through the cutting edge of the tool to locally heat the aluminum-based silicon carbide workpiece, so as to form a heat-affected zone within the cryogenic region. The control unit 30 is used to control the cryogenic auxiliary unit 10 and the laser auxiliary unit 20 to work simultaneously or alternately, so as to form a surface-heated and bottom-cooled temperature field on the surface of the partially processed area of ​​the aluminum-based silicon carbide workpiece. The heat-affected zone causes the temperature of the silicon carbide particles in the near-surface layer to rise rapidly and soften. The cryogenic region inhibits the diffusion of heat from the heat-affected zone to the subsurface layer, so that the interfacial bonding strength of the aluminum matrix in the subsurface layer is enhanced by maintaining the low temperature.

[0022] The thermal assisted machining apparatus described in this application is suitable for surface cutting of aluminum-based silicon carbide workpieces. Through the assistance of the low-temperature auxiliary unit 10 and the laser auxiliary unit 20, a unique "surface-heated, bottom-cooled" temperature field is formed on the surface of a portion of the machining area of ​​the aluminum-based silicon carbide workpiece. The laser beam rapidly raises the temperature of the silicon carbide particles near the surface of the machining area, softening them. Laser beam heating effectively solves the problem of difficult plastic removal of silicon carbide particles. Meanwhile, the jetting of the low-temperature cooling medium inhibits heat diffusion to the subsurface, keeping the aluminum substrate at a low temperature. This enhances the hardness and interfacial bonding strength of the aluminum substrate, effectively suppressing excessive softening and tool sticking, and strengthening its holding force on the silicon carbide particles, preventing them from peeling off due to decreased interfacial bonding. The combined effect of these two components makes the entire cutting process more inclined towards a uniform, shear-dominated plastic removal mode, thereby obtaining a high-quality machined surface free of microcracks and silicon carbide particle peeling.

[0023] The following section will provide a detailed description of the specific structure of each part of the cold and hot auxiliary processing device described in this application, as well as the position and connection relationship between each part.

[0024] First, the structure of the cutting tools and aluminum-based silicon carbide workpieces involved in the use of the cold and hot auxiliary processing device described in this application will be explained.

[0025] The aluminum-based silicon carbide workpiece mainly contains the elements Al, Si, and C, such as Figure 2 As shown, it includes an aluminum matrix and silicon carbide particles disposed within the aluminum matrix. The volume fraction of the silicon carbide particles is 30%-75%, and the size of the silicon carbide particles is 2μm-15μm.

[0026] The cutting tool is made of single-crystal diamond material, such as Figure 2 As shown, its rake angle is -35°, clearance angle is 10°, and the tip radius is 0.5mm. When cutting aluminum-based silicon carbide workpieces, the cutting speed is 500mm / min-1000mm / min, and the cutting depth is less than or equal to 2μm.

[0027] The cold and hot auxiliary processing device includes a low-temperature auxiliary unit 10, such as... Figure 1 and Figure 2 As shown, during the cutting process, the low-temperature auxiliary unit 10 applies a low-temperature cooling medium to the machining area of ​​the aluminum-based silicon carbide workpiece, thereby reducing the local temperature of the aluminum-based silicon carbide workpiece to a preset low-temperature range, thus forming a low-temperature region within the surface layer of the machining area on the aluminum-based silicon carbide workpiece. Figure 2 (The blue area in the middle). The low-temperature auxiliary unit 10 utilizes the low-temperature effect to enhance the hardness and elastic modulus of the aluminum matrix, enhance the interfacial bonding strength between the aluminum matrix and silicon carbide particles, and suppress the rotation, slippage and peeling of silicon carbide particles under cutting force.

[0028] Preferably, the cryogenic cooling medium is liquid nitrogen, which is sprayed directly through a nozzle onto the contact area between the cutting edge of the tool and the aluminum-based silicon carbide workpiece.

[0029] Preferably, the temperature range of the low-temperature region formed within the aluminum-based silicon carbide workpiece by the low-temperature auxiliary unit 10 is 100K-233K.

[0030] The hot and cold auxiliary processing device also includes a laser-assisted unit 20, such as Figure 1 and Figure 2 As shown, during the cutting process, the laser-assisted unit 20 emits a laser beam towards the processing area of ​​the aluminum-based silicon carbide workpiece to be processed, thereby controlling the local heating of the processing area; the laser beam penetrates the cutting edge of the tool to locally heat the aluminum-based silicon carbide workpiece, thereby forming a heat-affected zone in a low-temperature region. Figure 2 (The dark red area in the image). The laser-assisted unit 20 utilizes the thermal effect of lasers to precisely and rapidly heat and soften hard and brittle silicon carbide particles, reducing their hardness and brittleness, and improving their plastic flowability, enabling them to be plastically removed through shearing rather than brittle fracture.

[0031] Preferably, the laser beam is a near-infrared continuous wave laser with a wavelength of 1064nm, the power of the laser beam is less than or equal to 50W and can be adjusted according to the actual working conditions, and the spot diameter of the laser beam is less than 100μm.

[0032] The cold and hot auxiliary processing device also includes a control unit 30, such as Figure 1 and Figure 2 As shown, the control unit 30 is used to coordinate and control the simultaneous or alternating operation of the cryogenic auxiliary unit 10 and the laser auxiliary unit 20. By precisely controlling the intensity and area of ​​cryogenic cooling and laser heating through the control unit 30, a special temperature field with a large temperature gradient can be formed on the surface of the processing area of ​​the aluminum-based silicon carbide workpiece. This temperature field has the characteristics of "surface heat and bottom cold": the surface of the aluminum-based silicon carbide workpiece is heated by laser heating, which softens the silicon carbide particles in the near-surface layer, thus facilitating partial cutting of the surface layer by the tool; while the subsurface layer immediately below the surface layer is kept at a lower temperature by the action of the cryogenic cooling medium, so that the aluminum matrix maintains high hardness and high interfacial bonding strength. In this application, the surface layer related to cutting in the aluminum-based silicon carbide workpiece is divided into a near-surface layer and a subsurface layer. The near-surface layer is a layer of material under the surface of the aluminum-based silicon carbide workpiece to be processed, and its thickness is usually about 4 μm. The thickness of the aluminum-based silicon carbide workpiece to be cut is usually located within the near-surface layer. The subsurface layer is a layer of material below the near-surface layer.

[0033] Preferably, when the cryogenic auxiliary unit 10 and the laser auxiliary unit 20 are working simultaneously, the focal point of the laser beam is located in front of or directly above the contact point between the rake face of the tool and the aluminum-based silicon carbide workpiece, and the nozzle of the cryogenic cooling medium is set to the side-rear or same side of the laser beam action area.

[0034] Preferably, when the cryogenic auxiliary unit 10 and the laser auxiliary unit 20 work alternately, the heating time of the laser beam accounts for 10%-80% and the cooling time of the cryogenic cooling medium accounts for 20%-90% in a single processing cycle, and the cryogenic cooling medium is used to start cooling again after the laser beam heating stops, with a delay of 0.1s-2s.

[0035] Implementation Method Two: This application also provides a processing system suitable for aluminum-based silicon carbide, such as Figure 3 As shown, it includes a machine tool body and a hot and cold auxiliary processing device as described in Embodiment 1. The machine tool body is used to clamp the aluminum-based silicon carbide workpiece 5 and perform cutting motion, and the hot and cold auxiliary processing device is installed on the machine tool body.

[0036] The specific structure and technical effects of each part of the cold and hot auxiliary processing device have been described in detail in Implementation Method 1, and will not be repeated here.

[0037] like Figure 3 As shown, the machine tool body adopts a five-axis ultra-precision machine tool (such as the Precitek Nanoform X). The machine tool body has a tool post and a fixed fixture 6 arranged axially opposite each other. The tool post is equipped with a cutting tool 3, and the fixed fixture 6 is used to fix the aluminum-based silicon carbide workpiece 5. The tool axis side integrates a laser emitting device 4 (forming a laser auxiliary unit 20), a cryogenic cooling medium supply device 1 (forming a cryogenic auxiliary unit 10), and a numerical control unit for coordinated control (forming a control unit 30).

[0038] The specific cutting process of the above-mentioned machining system suitable for aluminum-based silicon carbide is as follows.

[0039] The aluminum-based silicon carbide workpiece 5 is vacuum-adsorbed onto the spindle of the machine tool, the tool 3 is mounted on the tool holder, and the light outlet of the laser emitting device 4 and the low-temperature nozzle 2 of the low-temperature cooling medium supply device 1 are aligned with the cutting edge area of ​​the tool 3.

[0040] The cryogenic cooling medium supply device 1 is activated, and liquid nitrogen is directly sprayed through the cryogenic nozzle 2 onto the contact area between the cutting edge of the tool 3 and the aluminum-based silicon carbide workpiece 5. Thermocouples are used to monitor the temperature of the processing area, ensuring that the local temperature of the workpiece is reduced and maintained within a preset low-temperature range (e.g., 100K to 233K), thereby forming a cryogenic region on the aluminum-based silicon carbide workpiece 5. During the actual processing, to create a cryogenic environment, the liquid nitrogen flow rate is adjusted to stabilize the temperature of the cryogenic region formed on the aluminum-based silicon carbide workpiece 5 at approximately 100K.

[0041] The laser emitting device 4 is activated, using a near-infrared continuous-wave fiber laser (such as IPG YLM-50) to output a laser beam with a wavelength of 1064nm. After optical path shaping and focusing, the diameter of the circular spot of the laser beam is controlled within 100μm. The laser beam is precisely focused through the tool 3 onto the processing area where the cutting edge contacts the aluminum-based silicon carbide workpiece 5, thereby forming a heat-affected zone in the low-temperature region. Preferably, the laser power is adjusted to 3W to achieve moderate heating and softening of the silicon carbide particles without over-melting the aluminum matrix.

[0042] Under the combined effects of cryogenic cooling and laser heating, the CNC unit activates the ultra-precision machine tool, and the cutting tool 3 cuts the rotating aluminum-based silicon carbide workpiece 5 along a predetermined path. At this time, a unique "surface-heated, bottom-cooled" temperature field is formed on the surface of the machining area: the laser beam rapidly raises the temperature of the silicon carbide particles near the surface (approximately 4 μm depth), softening them; while the continuous injection of liquid nitrogen inhibits heat diffusion to the subsurface, keeping the aluminum matrix in a low-temperature state, thus enhancing its hardness and interfacial bonding strength. The combined effect of these two factors makes the entire cutting process more inclined towards a uniform, shear-dominated plastic removal mode, thereby obtaining a high-quality machined surface free of microcracks and silicon carbide particle spalling.

[0043] To further demonstrate the technical effectiveness of the cold and hot assisted processing device and processing system described in this application, the processing system (low-temperature laser assisted cutting (CLAC)) described in this application was used to process the aluminum-based silicon carbide workpiece 5. At the same time, three control groups were set up, namely ordinary cutting (OC), pure laser assisted cutting (LAC, laser heating only) and pure low-temperature assisted cutting (CAC, liquid nitrogen cooling only).

[0044] The surface morphology of the four groups of aluminum-based silicon carbide workpieces 5 after machining was analyzed. The surface of the grooves after machining was observed using a white light interferometer and a scanning electron microscope, respectively. Figure 4 and Figure 5 As shown, Figure 4 These are comparative images of the morphology of the processed surfaces obtained using a white light interferometer. Figure 5 These are comparison images of the microstructure of the processed surfaces obtained by scanning electron microscopy.

[0045] For the CLAC group, such as Figure 4 (a) and Figure 5 As shown in (a), the surface quality of the aluminum-based silicon carbide workpiece 5 after processing is the best, exhibiting a smooth "shear removal" morphology without visible cracks, micro-pits, or silicon carbide particle spalling. This indicates that the material is mainly removed by plastic removal, achieving a high-quality processed surface.

[0046] For CAC group, such as Figure 4 (b) and Figure 5 As shown in (b), the surface of the machined aluminum-based silicon carbide workpiece 5 exhibits microcracks, micropits, and silicon carbide particle fracture. This is because the material hardens overall at low temperatures, increasing the difficulty of cutting, and the silicon carbide particles still primarily fracture brittlely.

[0047] For group OC, such as Figure 4 (c) and Figure 5 As shown in (c), the surface quality of the aluminum-based silicon carbide workpiece 5 after processing is the worst, with a large number of microcracks, material stacking and obvious scratches, and obvious brittle removal characteristics of silicon carbide particles.

[0048] For the LAC group, such as Figure 4 (d) and Figure 5 As shown in (d), the surface of the processed aluminum-based silicon carbide workpiece 5 is relatively smooth, but there are obvious micropores and silicon carbide particle indentation. This is because although the laser softens the silicon carbide particles, it also softens the aluminum matrix, reducing its holding force on the silicon carbide particles, resulting in the silicon carbide particles being indented or slipped.

[0049] To further verify the impact of cryogenic assisted machining on cutting forces, the cutting forces of aluminum-based silicon carbide workpiece 5 in the CLAC and LAC groups were measured during machining. Figure 6 As shown, this compares the cutting forces of room-temperature LAC and the low-temperature CLAC described in this application under different laser powers. Figure 6 (a) in the text represents the CLAC group. Figure 6 (b) represents the LAC group. The results show that within the laser power range of 0W-8W, the cutting force of the CLAC system (low-temperature environment) in this application is consistently significantly lower than that of the room-temperature LAC system. Especially at 0W (i.e., purely low-temperature assisted), the cutting force of CLAC is much lower than that of ordinary room-temperature cutting, indicating that low temperature does not lead to an increase in cutting force; on the contrary, it is beneficial to cutting by suppressing effects such as aluminum matrix adhesion. As the laser power increases, the cutting force of CLAC stabilizes at a low level, while the cutting force of room-temperature LAC increases sharply. This is because excessive softening of the aluminum matrix leads to an increase in the depth of cut.

[0050] To further compare and analyze the atomic shear strain distribution of the surface layer (including the near-surface layer and the subsurface layer below the near-surface layer) of aluminum-based silicon carbide workpieces during machining under different processing methods, molecular dynamics simulations were performed on the four different processing methods (CLAC, OC, LAC, and CAC). The molecular dynamics simulation results are as follows: Figure 7 As shown. In OC ( Figure 7 (a) in (a) and LAC ( Figure 7 (b) and CAC ( Figure 7 In (c) of this application, the shear deformation of the subsurface layer extends over a wider range. However, in the CLAC of this application... Figure 7 In (d) of the diagram, the large temperature gradient created by the combination of heating and cooling resulted in a high concentration of shear strain in the near-surface region of the workpiece, while deformation of the subsurface layer below was effectively suppressed. This indicates that the low-temperature environment inhibited the plastic flow of the aluminum matrix, while laser heating precisely targeted the layer to be removed. The combination of these two methods enabled precise control of the material removal process and reduced subsurface damage.

[0051] In summary, the cold and hot assisted processing apparatus and processing system provided in this application solve the problems of silicon carbide particle peeling and matrix tearing in the ultra-precision processing of aluminum-based silicon carbide composite materials by simultaneously utilizing low temperature to enhance interface bonding and laser heating to soften silicon carbide particles, significantly improving surface quality and providing an effective technical solution for the application of high volumetric aluminum-based silicon carbide materials in the field of precision optical component manufacturing.

[0052] It should be understood that expressions such as "comprising" and "may include" as used in this application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In this application, terms such as "comprising" and / or "having" may be interpreted as indicating a specific characteristic, number, operation, constituent element, component, or combination thereof, but should not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0053] It should be understood that the terms “center,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “inner,” “outer,” “clockwise,” “counterclockwise,” “axial,” “radial,” and “circumferential” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0054] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0055] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0056] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A cold and hot auxiliary processing device suitable for aluminum-based silicon carbide, characterized in that, include: Low-temperature auxiliary unit (10) is used to apply a low-temperature cooling medium to the aluminum-based silicon carbide workpiece to be processed during the cutting process of the tool, so as to form a low-temperature region in the aluminum-based silicon carbide workpiece; A laser-assisted unit (20) is used to emit a laser beam to the aluminum-based silicon carbide workpiece during the cutting process of the tool. The laser beam passes through the cutting edge of the tool to locally heat the aluminum-based silicon carbide workpiece to form a heat-affected zone in the low-temperature region. Control unit (30) is used to control the low temperature auxiliary unit (10) and the laser auxiliary unit (20) to work simultaneously or alternately to form a surface-heating and bottom-cooling temperature field on the surface of the partially processed area of ​​the aluminum-based silicon carbide workpiece. The heat-affected zone causes the temperature of the silicon carbide particles in the near-surface layer to rise rapidly and soften. The low temperature region inhibits the heat from the heat-affected zone from diffusing to the subsurface layer, so that the interfacial bonding strength of the aluminum matrix in the subsurface layer is enhanced by maintaining the low temperature.

2. The cold and hot auxiliary processing apparatus suitable for aluminum-based silicon carbide according to claim 1, characterized in that, In the cryogenic auxiliary unit (10), the cryogenic cooling medium is liquid nitrogen, which is sprayed directly through a nozzle to the contact area between the cutting edge of the tool and the aluminum-based silicon carbide workpiece.

3. The cold heat assisted machining apparatus suitable for aluminum-based silicon carbide of claim 2, wherein, The temperature range of the low-temperature region is 100K-233K.

4. The apparatus for warm-aided machining of aluminum-based silicon carbide of claim 1, wherein, In the laser-assisted unit (20), the laser beam is a near-infrared continuous wave laser with a wavelength of 1064 nm.

5. The cold heat assisted machining apparatus suitable for aluminum-based silicon carbide of claim 4, wherein, The power of the laser beam is less than or equal to 50W, and its spot diameter is less than 100μm.

6. The cold heat assisted machining apparatus for aluminum-based silicon carbide suitable according to any one of claims 1 to 5, characterized by, When the cryogenic auxiliary unit (10) and the laser auxiliary unit (20) work simultaneously, the focal point of the laser beam is located in front of or directly above the contact point between the front face of the cutting tool and the aluminum-based silicon carbide workpiece, and the nozzle of the cryogenic cooling medium is set to the side rear or same side of the laser beam action area.

7. The cold and hot assisted processing apparatus suitable for aluminum-based silicon carbide according to any one of claims 1 to 5, characterized in that, When the low-temperature auxiliary unit (10) and the laser auxiliary unit (20) work alternately, the heating time of the laser beam accounts for 10%-80% and the cooling time of the low-temperature cooling medium accounts for 20%-90% in a single processing cycle. After the laser beam stops heating, the low-temperature cooling medium is used to start cooling again after a delay of 0.1s-2s.

8. The cold and hot assisted processing apparatus suitable for aluminum-based silicon carbide according to any one of claims 1 to 5, characterized in that, The cutting depth of the tool is less than or equal to 2μm, the cutting speed is 500mm / min-1000mm / min, the rake angle of the tool is -35°, and the clearance angle is 10°.

9. The apparatus for cold heat assisted machining of aluminum-based silicon carbide according to any one of claims 1 to 5, characterized in that, The volume fraction of silicon carbide particles in the aluminum-based silicon carbide workpiece is 30%-75%, and the size of the silicon carbide particles is 2μm-15μm.

10. A processing system suitable for aluminum-based silicon carbide, characterized in that, include: The machine tool body is used to clamp aluminum-based silicon carbide workpieces and perform cutting motions. The cold and hot auxiliary processing apparatus according to any one of claims 1 to 9.

Images