Crystal bar cutting method and crystal bar cutting apparatus

Abstract

The application discloses a crystal bar cutting method and a crystal bar cutting device, and belongs to the technical field of semiconductors. The cutting method comprises the following steps: determining the linear speed of a diamond wire based on a cutting depth, and controlling the operation of the diamond wire at the linear speed of the diamond wire to cut the crystal bar; after the crystal bar and the diamond wire are relatively moved to a preset position along a cutting direction, the linear speed of the diamond wire is adjusted to a maximum linear speed, and the operation of the diamond wire is controlled at the maximum linear speed to cut the remaining resin plate. By controlling the linear speed of the diamond wire in stages, the linear speed can be matched with different cutting states, so that the cutting stability and the cutting quality are improved, the risk that the crystal bar is not cut through is reduced, and the cutting yield is improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a crystal rod cutting method and crystal rod cutting equipment. Background Technology

[0002] Diamond wire cutting is a common processing method used in crystal ingot slicing. It typically uses a diamond wire wound on a grooved wheel to cut a crystal ingot connected to a resin plate, and the slicing is achieved by controlling the movement of the diamond wire and the stage. To ensure a stable cutting process, cutting fluid is usually supplied to the diamond wire.

[0003] However, if a fixed wire speed is always used at different cutting depths or the wire speed is set improperly, it can easily lead to poor geometric parameters of the cut wafer. Summary of the Invention

[0004] Purpose of the invention: This application provides a crystal rod cutting method to solve the technical problem of poor geometric parameters of the wafers formed by cutting; another purpose of this application is to provide a crystal rod cutting device.

[0005] Technical solution: This application provides a method for cutting crystal rods, the method comprising the following steps: The linear velocity of the diamond wire is determined based on the cutting depth, and the diamond wire is controlled to run according to the linear velocity of the diamond wire in order to cut the crystal rod; After the crystal rod and the diamond wire move relative to each other along the cutting direction to a preset position, the linear speed of the diamond wire is adjusted to the maximum linear speed, and the diamond wire is controlled to run according to the maximum linear speed to cut the remaining resin board.

[0006] In some embodiments, determining the linear velocity of the diamond wire based on the cutting depth includes: The chord length of the crystal rod corresponding to the cutting depth is determined based on the cutting depth; The linear velocity of the diamond wire is determined based on the chord length of the crystal rod and the minimum linear velocity of the diamond wire.

[0007] In some embodiments, determining the linear velocity of the diamond wire based on the chord length of the crystal rod and the minimum linear velocity of the diamond wire includes: Determine the product of the crystal rod chord length and the preset adjustment coefficient; The sum of the minimum linear velocity of the diamond wire and the product is determined as the linear velocity of the diamond wire.

[0008] In some embodiments, the step of determining the cutting depth includes: The crystal rod is divided into n intervals along the cutting direction, where n satisfies: 3≤n≤D / 10, where n is an integer and D is the diameter of the crystal rod; For each of the intervals, determine the representative depth H. x and the representative depth H x The cutting depth is determined as the depth used to cut the diamond wire into the specified interval.

[0009] In some embodiments, the step of determining the minimum linear speed of the diamond wire includes: The minimum linear velocity is determined based on the distance L between the two nozzles and the separation distance Y required for the cutting fluid to detach from the diamond wire in the vertical direction.

[0010] In some embodiments, determining the minimum linear velocity based on the distance L between the two nozzles and the separation distance Y required for the cutting fluid to detach from the diamond wire in the vertical direction includes: The liquid carrying distance L is determined based on the distance L between the two nozzles. d ; The separation time T is determined based on the separation distance Y required for the cutting fluid to detach from the diamond wire in the vertical direction. The separation time T is used to characterize the fluid-carrying capacity of the diamond wire. According to the liquid carrying distance L d The minimum linear velocity V is determined by the separation time T. min .

[0011] In some embodiments, the step of determining the maximum linear velocity includes: The maximum linear velocity V is determined based on the mass m, the radius of rotation r, and the maximum permissible centrifugal force F of the Geneva wheel. max .

[0012] In some embodiments, determining the separation time T based on the separation distance Y required for the cutting fluid to detach from the diamond wire in the vertical direction includes: The separation distance Y is divided into a first distance Y1 required for the cutting fluid to detach from the diamond wire and a second distance Y2 for the cutting fluid to continue moving after detaching from the diamond wire. The separation distance Y satisfies: Y = Y1 + Y2. The first time T1 is determined based on the first distance Y1, the acceleration due to gravity, and the frictional force between the cutting fluid and the diamond wire; The second time T2 is determined based on the second distance Y2 and the gravitational acceleration; The separation time T is determined based on the first time T1 and the second time T2, and the separation time T satisfies: T = T1 + T2. In some embodiments, the maximum linear velocity V max With the minimum linear velocity V min Satisfy: V max / V min <3.

[0013] In some embodiments, the ingot cutting method further includes the following steps: Set the target temperature; Obtain the detection temperature of the crystal rod cutting equipment; The target temperature and the detection temperature are compared, and the temperature of the crystal rod cutting equipment is adjusted accordingly.

[0014] Accordingly, this application also provides a crystal rod cutting device, comprising: frame; A main shaft, which is rotatably mounted on the frame; A grooved wheel, which is connected to the main shaft; Diamond wire, the diamond wire being wound around the grooved wheel; A drive assembly, wherein the drive assembly and the grooved wheel are respectively located on both sides of the frame; A transmission component, wherein the drive assembly is connected to the main shaft via the transmission component; A platform for connecting resin boards, the platform being movably connected to the frame and located on the same side of the frame as the grooved wheel; A controller configured to perform a crystal rod cutting method as described in any of the above embodiments to control the linear speed of the diamond wire.

[0015] In some embodiments, the ingot cutting equipment further includes a temperature control system for adjusting the temperature of a target component, the target component being one of the frame, the spindle, the drive assembly, the transmission component, and the stage.

[0016] In some embodiments, the temperature control system includes a cooling assembly, the cooling assembly comprising: A flow channel, wherein the flow channel is disposed on the target component; A heat exchanger, wherein both ends of the flow channel are respectively connected to the heat exchanger; A temperature sensor, used to detect the temperature of the target component; An adjustment component is disposed in the flow channel and is used to adjust the flow rate in the flow channel according to the signal from the temperature sensor.

[0017] Beneficial Effects: Compared with the prior art, the crystal rod cutting method provided in this application includes the following steps: determining the linear speed of the diamond wire based on the cutting depth, and controlling the diamond wire to run according to the linear speed of the diamond wire to cut the crystal rod; after the crystal rod and the diamond wire move relative to each other along the cutting direction to a preset position, adjusting the linear speed of the diamond wire to the maximum linear speed, and controlling the diamond wire to run according to the maximum linear speed to cut the remaining resin board. This application, by determining the linear speed of the diamond wire based on the cutting depth and controlling the diamond wire to run according to the linear speed, can match the linear speed of the diamond wire with the cutting state during the crystal rod cutting process, thereby improving the stability of the cutting process and improving the cutting quality; simultaneously, by adjusting the linear speed of the diamond wire to the maximum linear speed after the crystal rod and the diamond wire move relative to each other to the preset position to cut the remaining resin board, it can improve the cutting capability in subsequent cutting processes and reduce the risk of the crystal rod not being cut through; furthermore, by using different linear speed control methods for cutting the crystal rod and cutting the remaining resin board, the different cutting requirements of the crystal rod cutting stage and the resin board cutting stage can be taken into account, thereby improving the cutting yield. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a flowchart of the cutting method provided in the embodiments of this application; Figure 2 This is a line graph showing the change in the linear velocity of the diamond wire in the cutting method provided in this application embodiment; Figure 3 This is a front view of the cutting equipment to which the cutting method provided in the embodiments of this application is applicable; Figure 4 This is a schematic diagram of the partitioning of the crystal rod in the cutting method provided in the embodiments of this application; Figure 5 This is a schematic diagram of the chord length of the crystal rod in a cutting method provided in an embodiment of this application; Figure 6 This is a schematic diagram of the chord length of the crystal rod in a cutting method provided in another embodiment of this application; Figure 7 This is a schematic diagram of the chord length of the crystal rod in a cutting method provided in another embodiment of this application; Figure 8 This is a schematic diagram of the cutting equipment provided in the embodiments of this application; Figure 9A schematic diagram comparing the warpage amount between Comparative Example 1 and Example 1 provided for embodiments of this application; Figure 10 A schematic diagram showing the comparison of nanomorphology between Comparative Example 1 and Example 1 provided for the embodiments of this application; Figure 11 This is a schematic diagram comparing the cut-through situation of Example 1 and Comparative Example 2 in the embodiments of this application; Figure 12 This is a line graph showing the change in the linear velocity of the diamond wire in Comparative Example 1 and Comparative Example 2 of this application.

[0020] Explanation of reference numerals in the attached figures: 10-Crystal rod; 11-Interval; 20-Resin plate; 100-Frame; 200-Spindle; 300-Gate wheel; 400-Diamond wire; 500-Drive assembly; 600-Transmission component; 700-Liquid supply mechanism; 710-Nozzle; 800-Stage; 900-Temperature control system; 910-Cooling assembly; 911-Flow channel; 913-Temperature sensor; 914-Adjustment assembly; 915-Air conditioner; Z-Cutting direction. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two elements or the interaction between two elements. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances. In the description of this application, "multiple" means two or more, unless otherwise expressly and specifically limited. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0023] The following disclosure provides many different implementations or examples for carrying out different structures of this application. To simplify the disclosure of this application, the components and arrangements of specific examples are described below. Of course, these are merely examples and are not intended to limit this application.

[0024] Diamond wire cutting (400) is a common processing method used in the slicing of crystal rods (10). It typically involves using a diamond wire (400) wound on a grooved wheel (300) to cut the crystal rod (10) connected to a resin plate (20). Slicing is achieved by controlling the movement of the diamond wire (400) and the stage (800). To ensure a stable cutting process, cutting fluid is usually supplied to the diamond wire (400).

[0025] However, if a fixed wire speed is always used at different cutting depths or the wire speed is set improperly, the resulting wafer may have poor geometric parameters, such as high warpage and high nanoscale morphology.

[0026] To address the technical problem of poor wafer geometry parameters resulting from the aforementioned cutting process, the first embodiment of this application provides a crystal rod cutting method. (See [link to relevant documentation]). Figure 1 The crystal rod cutting method is used to cut crystal rod 10. The crystal rod cutting method includes the following steps: determining the linear speed of diamond wire 400 based on the cutting depth, and controlling the diamond wire 400 to run according to the linear speed of diamond wire 400 to cut crystal rod 10; after crystal rod 10 and diamond wire 400 move relative to each other along the cutting direction Z to a preset position, adjusting the linear speed of diamond wire 400 to the maximum linear speed, and controlling the diamond wire 400 to run according to the maximum linear speed to cut the remaining resin board 20.

[0027] In this case, the cutting direction Z is the same as the cutting depth direction.

[0028] The preset position can be the relative position of the crystal rod 10 and the diamond wire 400 along the cutting direction Z when the crystal rod 10 is completely cut under ideal cutting conditions. It should be noted that due to factors such as wire bowing, when the crystal rod 10 and the diamond wire 400 move relative to each other along the cutting direction Z to this preset position, the crystal rod 10 may not yet be completely cut. Therefore, after the crystal rod 10 and the diamond wire 400 move relative to each other along the cutting direction Z to this preset position, continuing to control the diamond wire 400 to cut the resin plate 20 allows for cutting redundancy, thereby reducing the risk of the crystal rod 10 not being cut through.

[0029] The crystal ingot 10 is connected to the stage 800 via the resin plate 20, and the crystal ingot 10 is connected to the side of the resin plate 20 closest to the diamond wire 400. Therefore, during the cutting process, the diamond wire 400 first cuts the crystal ingot 10, and then cuts the resin plate 20. Furthermore, in order to increase the connection area between the resin plate 20 and the crystal ingot 10, a connection groove can be opened on the resin plate 20, and a portion of the crystal ingot 10 is placed in the connection groove. This allows the diamond wire 400 to begin cutting the resin plate 20 before completely cutting the crystal ingot 10. After the crystal ingot 10 and the diamond wire 400 move to the preset position, the diamond wire 400 continues to cut into the remaining resin plate 20 until the resin plate 20 is cut to the preset depth, leaving cutting redundancy for the crystal ingot 10 and reducing the risk that the crystal ingot 10 may not be cut through due to the deep wire bow.

[0030] In some embodiments, the resin plate 20 is not completely cut off after the diamond wire 400 cuts to a preset depth; in other embodiments, the resin plate 20 is completely cut off after the diamond wire 400 cuts to a preset depth.

[0031] In some embodiments, the ingot 10 moves relative to the rack 100 while the spindle 200 remains stationary relative to the rack 100, thereby achieving relative movement between the ingot 10 and the diamond wire 400. In other embodiments, the ingot 10 remains stationary relative to the rack 100 while the spindle 200 moves relative to the rack 100, thereby achieving relative movement between the ingot 10 and the diamond wire 400. In still other embodiments, the ingot 10 moves relative to the rack 100 while the spindle 200 also moves relative to the rack 100, thereby achieving relative movement between the ingot 10 and the diamond wire 400.

[0032] Firstly, in the above embodiments, the first stage is used to cut the crystal ingot 10. When the first stage ends, the crystal ingot 10 and the diamond wire 400 move relative to each other along the cutting direction Z to a preset position. The second stage is used to continue cutting the resin plate 20 and cut the resin plate 20 to a preset depth to form cutting redundancy and reduce the possibility that the crystal ingot 10 is not completely cut. By adjusting the wire speed of the diamond wire 400 based on the cutting depth in the first stage of cutting the crystal ingot 10, the wire speed of the diamond wire 400 at different cutting depths can be matched with the corresponding cutting state, which helps to ensure the stability of the cutting force at different cutting depths, thereby improving the geometric parameters of the wafer and enhancing the stability of the cutting process and product quality.

[0033] Specifically, during the cutting of the crystal ingot 10, especially the cutting of cylindrical crystal ingots 10, the chord length of the crystal ingot 10 varies with different cutting depths. Furthermore, the central region of the crystal ingot 10 cross-section has a larger contact area with the diamond wire 400 and requires higher cutting force, while the contact area between the exit and entry zones and the diamond wire 400 is smaller and requires relatively lower cutting force. Therefore, adjusting the wire speed based on the cutting depth in the first stage can adapt the wire speed to the cutting requirements of different cutting regions. This helps reduce edge chipping caused by wire speed mismatch and reduces geometric parameter anomalies such as warp and nano-morphology (NT) caused by cutting force fluctuations.

[0034] For ease of explanation, in the following text, the cutting method in which the linear velocity in the first stage varies with the chord length of the crystal rod 10 and the linear velocity is adjusted to the maximum linear velocity in the second stage is referred to as Example 1; the cutting method in which the linear velocity is kept constant throughout the cutting process is referred to as Comparative Example 1.

[0035] Specifically, please refer to Figure 9 , Figure 9 The vertical axis represents warpage in μm, and the horizontal axis, from left to right, represents Comparative Example 1 and Example 1, respectively.

[0036] Through observation Figure 9 It can be seen that the warpage of 272 wafers produced using Comparative Example 1 was measured, with an average value of 5898 μm and a standard deviation of 1522 μm; the warpage of 186 wafers produced using Example 1 was measured, with an average value of 4018 μm and a standard deviation of 1618 μm.

[0037] In Example 1, the standard deviation of warpage is similar to that in Comparative Example 1. However, the average value of warpage in Example 1 is significantly smaller than that in Comparative Example 1. Therefore, it can be considered that Example 1 has improved the problem of high warpage.

[0038] Specifically, please refer to Figure 10 , Figure 10 The vertical axis represents the nanometer morphology in nm, and the horizontal axis, from left to right, represents Comparative Example 1 and Example 1, respectively.

[0039] Through observation Figure 10 It can be seen that the average nanostructure of 270 wafers produced using Comparative Example 1 was 10 nm with a standard deviation of 2 nm; the average nanostructure of 186 wafers produced using Example 1 was 8 nm with a standard deviation of 2 nm.

[0040] In Example 1, the standard deviation of the nano-morphology is equal to that of Comparative Example 1. However, the average value of the nano-morphology in Example 1 is significantly smaller than that in Comparative Example 1. Therefore, it can be considered that Example 1 has improved the problem of high nano-morphology.

[0041] Taking the cylindrical crystal rod 10 as an example, the chord length is the largest when cutting to the diameter region, and the required cutting force is larger; the chord length is smaller in the exit region and the entry region, and the required cutting force is smaller.

[0042] Secondly, in the above embodiments, in the second stage, after the crystal ingot 10 and the diamond wire 400 move relative to each other to a preset position, the diamond wire 400 continues to cut the remaining resin plate 20 until the resin plate 20 is cut to a preset depth. At this time, increasing the wire speed of the diamond wire 400 to its maximum speed can increase the number of diamond particles participating in the cutting per unit time, thereby improving the cutting capability in subsequent cutting processes. Simultaneously, it can shorten the cutting time in the second stage, thus allowing more time for the first stage in a single cutting process, which is beneficial for improving wafer yield. Furthermore, since the cutting force of the diamond wire 400 on the take-up side is relatively weak and wire bowing is easily accumulated, using the maximum wire speed for cutting in the second stage also helps to compensate for insufficient cutting force caused by wire bowing, reducing the risk of the crystal ingot 10 not being cut through. Meanwhile, by continuing to cut the diamond wire 400 into the resin plate 20 to a preset depth, cutting redundancy can be formed to compensate for the actual insufficient cutting caused by factors such as wire bow, cutting depth error and insufficient cutting force on the take-up side, thereby reducing the risk of the crystal rod 10 not being cut through and helping to ensure the cutting stability during the take-up stage.

[0043] Furthermore, by adopting different linear speed control methods for the two different stages of cutting the crystal ingot 10 and cutting the remaining resin plate 20, the requirements for geometric parameters and edge chipping control in the crystal ingot 10 cutting stage and the requirements for cutting capacity in the redundant cutting stage of the resin plate 20 can be taken into account, thereby improving the overall cutting yield.

[0044] In some embodiments, determining the linear velocity of the diamond wire 400 based on the cutting depth includes: determining the chord length of the crystal rod 10 corresponding to the cutting depth based on the cutting depth; and determining the linear velocity of the diamond wire 400 based on the chord length of the crystal rod 10 and the minimum linear velocity of the diamond wire 400.

[0045] Since the chord length of the crystal ingot 10 varies at different cutting depths, and the cutting contact state and cutting requirements differ for different chord lengths of the crystal ingot 10, in the above embodiment, by first determining the corresponding chord length of the crystal ingot 10 based on the cutting depth, and then determining the linear speed of the diamond wire 400 based on the chord length of the crystal ingot 10 and the minimum linear speed, the linear speed of the diamond wire 400 can be matched with the cutting state at different cutting depths. This helps to ensure the stability of the cutting force at different cutting depths, thereby improving the geometric parameters of the wafer and enhancing the stability of the cutting process and product quality.

[0046] Specifically, the chord length of the crystal rod 10 is larger in the central region of the cross-section, resulting in a larger contact area between the diamond wire 400 and the crystal rod 10, and thus a higher cutting force requirement. Conversely, the chord length of the crystal rod 10 is smaller in the exit and entry zones, resulting in a smaller contact area between the diamond wire 400 and the crystal rod 10, and thus a lower cutting force requirement. Therefore, by incorporating the chord length of the crystal rod 10 into the determination process of the diamond wire 400's linear velocity, the linear velocity settings for different cutting regions can better match the cutting requirements of the corresponding regions. This helps reduce edge chipping caused by linear velocity mismatch and also helps reduce geometric parameter anomalies caused by cutting force fluctuations.

[0047] Furthermore, the fluid carrying capacity of the diamond wire 400 is related to the wire speed. Generally, at lower wire speeds, the cutting fluid adhering to the diamond wire 400 is more likely to detach during transmission, thus hindering its ability to be carried into the cutting area. Conversely, at higher wire speeds, the diamond wire 400 can carry more cutting fluid into the cutting area before it detaches, thereby improving its fluid carrying capacity. Therefore, the wire speed of the diamond wire 400 should not be lower than the minimum wire speed required to meet the fluid carrying capacity requirement.

[0048] Based on this, by taking the minimum linear speed as the base linear speed of the diamond wire 400, and combining it with the 10-chord length of the crystal rod to determine the linear speed of the diamond wire 400, it is possible to adjust the linear speed at different cutting depths while ensuring that the diamond wire 400 has basic fluid carrying capacity. This is beneficial to taking into account both the cutting fluid supply requirements and the cutting requirements, and further ensuring the stability of the cutting process.

[0049] In some embodiments, the cut crystal rod 10 is cylindrical; see [link to documentation]. Figure 2 and Figure 3 In the first stage, as the cutting depth increases, the linear velocity of the diamond wire 400 first increases and then decreases. Among these, Figure 2 The vertical axis represents the linear velocity in m / s, and the horizontal axis represents the cutting depth in mm.

[0050] Because during the cutting of the first half of the crystal rod 10, i.e., cutting... Figure 3When cutting the lower half of the crystal rod 10, the chord length of the crystal rod 10 gradually increases, and when cutting the rear half of the crystal rod 10, i.e., cutting... Figure 3 In the upper half of the crystal ingot 10, the chord length of the crystal ingot 10 gradually decreases. Therefore, in the above embodiment, increasing and then decreasing the wire speed of the diamond wire 400 matches the changing trend of the chord length of the crystal ingot 10, thus helping to ensure the stability of the cutting force. Furthermore, the lower wire speed during the entry and exit stages helps reduce the risk of edge chipping in the edge region; while the higher wire speed in the middle region helps meet higher cutting requirements. This also helps to reduce cutting fluctuations, improve the geometric parameters of the wafer, and enhance the stability of the cutting process and product quality.

[0051] In some embodiments, determining the linear velocity of the diamond wire 400 based on the chord length of the crystal rod 10 and the minimum linear velocity of the diamond wire 400 includes: determining the product of the chord length of the crystal rod 10 and a preset adjustment coefficient; and determining the sum of the minimum linear velocity of the diamond wire 400 and the product as the linear velocity of the diamond wire 400.

[0052] Specifically, the wire speed of diamond wire 400 satisfies: V x =V min +aL x Among them, V x V represents the linear velocity corresponding to the current cutting depth. min L represents the minimum linear velocity. x This represents the 10-chord length of the crystal rod corresponding to the current cutting depth, and 'a' represents the adjustment coefficient.

[0053] Specifically, the linear velocity V of the diamond wire 400 x The unit is m / s, 10≤V x ≤50, minimum linear speed V of diamond wire 400 min The unit is m / s, 3≤V min ≤30, crystal rod 10 chord length L x The unit is mm, 0≤L x ≤450, the unit of a is m / (s·mm), 0<a≤0.2.

[0054] In some embodiments, the crystal rod 10 is a crystal rod 10 used for fabricating 8-inch silicon wafers, the diameter D of the crystal rod 10 is 200 mm, and the chord length L of the crystal rod 10 is... x Satisfy: 0≤L x ≤200mm, adjustment coefficient a is 0.2m / (s·mm), minimum linear velocity V min Take 10 m / s. Based on V x =V min +aL x It can be seen that the linear velocity V x Satisfies: 10m / s≤V x≤50m / s. Therefore, when the diameter D of the crystal rod 10 is 200mm, the adjustment coefficient a can be taken as 0.2m / (s·mm).

[0055] In other embodiments, the crystal rod 10 is a crystal rod 10 used for fabricating 12-inch silicon wafers, the diameter D of the crystal rod 10 is 300 mm, and the chord length L of the crystal rod 10 is... x Satisfy: 0≤L x ≤300mm, adjustment coefficient a is 0.1m / (s·mm), minimum linear velocity V min Take 10 m / s. Based on V x =V min +aL x It can be seen that the linear velocity V x Satisfies: 10m / s≤V x ≤40m / s. Therefore, when the diameter D of the crystal rod 10 is 300mm, the adjustment coefficient a can be taken as 0.1m / (s·mm).

[0056] In the above embodiments, by ensuring that the linear velocity of the diamond wire 400 in the first stage satisfies the above relationship, the linear velocity of the diamond wire 400 can be quantified and determined based on the chord length of the crystal rod 10 corresponding to the current cutting depth. This helps to match the linear velocity settings at different cutting depths with the corresponding cutting states, thereby helping to ensure the stability of the cutting force and improve the geometric parameters of the wafer.

[0057] Specifically, V min The basic linear speed of diamond wire 400 is used to ensure that diamond wire 400 has basic liquid-carrying capacity; aL x The linear velocity increment, corresponding to the current cutting depth, is used to reflect the differences in cutting requirements under different 10-chord lengths of the crystal ingot. Therefore, when the 10-chord length of the crystal ingot is large, the linear velocity of the diamond wire 400 is correspondingly increased, which is beneficial to meeting higher cutting requirements; when the 10-chord length of the crystal ingot is small, the linear velocity of the diamond wire 400 is correspondingly decreased, which is beneficial to reducing cutting fluctuations caused by excessively high linear velocity. This helps to ensure that the change in the linear velocity of the diamond wire 400 corresponds to the change in the 10-chord length of the crystal ingot, and helps to reduce edge chipping and geometric parameter abnormalities caused by mismatch between linear velocity and cutting state.

[0058] Meanwhile, by using the aforementioned relationship to determine the wire speed of the diamond wire 400, the setting process of the wire speed can be transformed from qualitative adjustment to quantitative adjustment, thereby improving the clarity and operability of wire speed control. Furthermore, by setting the adjustment coefficient 'a', the wire speed increment corresponding to the chord length of the crystal rod 10 can be adjusted according to different crystal rod 10 sizes, different cutting conditions, or different control requirements, thereby improving the applicability and implementation stability of the crystal rod cutting method.

[0059] In some embodiments, the value of the adjustment coefficient 'a' can be any one of 1 / 5, 1 / 6, 1 / 7, 1 / 8, 1 / 9, 1 / 10, 1 / 12, 1 / 14, 1 / 16, 1 / 18, 1 / 20, 1 / 22, 1 / 24, 1 / 26, 1 / 28, 1 / 30, 1 / 32, 1 / 34, 1 / 36, 1 / 38, 1 / 40, 1 / 42, 1 / 44, 1 / 46, 1 / 48, 1 / 50, 1 / 52, 1 / 54, 1 / 56, 1 / 58, 1 / 60, 1 / 62, 1 / 64, 1 / 66, 1 / 68, 1 / 70, or a value between any two of them. Specifically, when the value of 'a' is large, the linear velocity increment corresponding to the chord length of the crystal rod 10 is large, thus allowing for a larger adjustment range of the linear velocity of the diamond wire 400 as the chord length of the crystal rod 10 changes. This, in turn, helps to improve the responsiveness to changes in cutting requirements at different cutting depths. When the value of 'a' is small, the linear velocity increment corresponding to the chord length of the crystal rod 10 is small, resulting in a smoother change in the linear velocity of the diamond wire 400. This, in turn, helps to reduce the cutting impact caused by excessive fluctuations in linear velocity. Therefore, when the value of 'a' is within the range defined in the embodiments of this application, the linear velocity of the diamond wire 400 can be adjusted according to the change in the chord length of the crystal rod 10, while avoiding excessively large or small changes in linear velocity, thereby balancing cutting requirements and the stability of the cutting process.

[0060] In some embodiments, the linear velocity V of the diamond wire 400 x It can be any value or a value between any two of the following: 10 m / s, 12 m / s, 14 m / s, 16 m / s, 18 m / s, 20 m / s, 22 m / s, 24 m / s, 26 m / s, 28 m / s, 30 m / s, 32 m / s, 34 m / s, 36 m / s, 38 m / s, 40 m / s, 42 m / s, 44 m / s, 46 m / s, 48 ​​m / s, and 50 m / s. Specifically, when the linear velocity V... x When the speed is large, the number of diamond particles participating in cutting per unit time is greater, which is beneficial to improving cutting ability and efficiency, and also to improving the liquid carrying capacity of diamond wire 400; when the wire speed V x When the speed is relatively low, it helps to reduce the vibration and cutting impact generated by the diamond wire 400 operation, and reduces the possibility of edge chipping in the crystal rod 10 edge region. Therefore, when the wire speed V... x When within the scope defined by the embodiments of this application, it is possible to balance cutting ability, liquid carrying capacity, and stability of the cutting process.

[0061] In some embodiments, the minimum linear velocity V of the diamond wire 400 minIt can be any value or a combination of 3m / s, 4m / s, 5m / s, 6m / s, 7m / s, 8m / s, 9m / s, 10m / s, 12m / s, 14m / s, 16m / s, 18m / s, 20m / s, 22m / s, 24m / s, 26m / s, 28m / s, and 30m / s. Specifically, when the minimum linear velocity V... min When the speed is relatively high, the basic linear velocity of the diamond wire 400 is relatively high, which is beneficial to improving the fluid carrying capacity of the diamond wire 400 and ensuring the supply of cutting fluid; when the minimum linear velocity V... min When the length is small, the linear velocity V can be adjusted according to the 10-chord length of the crystal rod. x This allows for a larger adjustment margin and helps reduce the cutting impact when the 10-chord length of the crystal rod is small. Therefore, when the minimum linear velocity V... min When within the scope defined in the embodiments of this application, it is possible to balance the demand for cutting fluid supply, the range of linear speed adjustment, and the stability of the cutting process.

[0062] It should be noted that the linear velocity V x Minimum linear velocity V min Adjustment coefficient 'a' and crystal rod 10 chord length 'L' x The specific values ​​of V are matched to each other so that, according to V x =V min +aL x A given linear velocity V x Within the aforementioned linear velocity range, and making the linear velocity V x Not greater than the maximum linear speed V max .

[0063] In some embodiments, please refer to Figure 4 The steps for determining the cutting depth include: dividing the crystal rod 10 into n intervals 11 along the cutting direction Z, where n satisfies: 3≤n≤D / 10, where n is an integer and D is the diameter of the crystal rod 10; and determining the representative depth H for each interval 11. x And will represent depth H x The cutting depth used for cutting diamond wire 400 to interval 11 was determined.

[0064] Specifically, when the diamond wire 400 is cut to a range 11, the cutting depth is always taken as the representative depth H. x .

[0065] Wherein, the square of the radius R of the crystal rod 10 is equal to the depth H represented by the interval 11. x The square of the difference between the radius R of the crystal rod 10 and the half-chord length L corresponding to the interval 11 x The sum of the squares of 1 / 2, which is the length L of the 10-chord crystal rod. x Satisfy: R²=(L x / 2)²+(H x-R)²; R represents the radius of the crystal rod 10, x is a positive integer, and x≤n.

[0066] Where D is in mm, 25 ≤ D ≤ 450, R = 0.5D, R is in mm, 12.5 ≤ R ≤ 225, H x The unit is mm, 0≤H x ≤450, chord length L x The unit is mm, 0≤L x ≤D.

[0067] Each interval 11 has the same dimension in the cutting direction Z. Figure 4 For example, Figure 4 The crystal rod 10 is divided into 16 intervals 11 along the cutting direction Z. Each interval 11 is formed between two dashed lines. The distance between two adjacent dashed lines is the same. Each interval 11 has the same size in the vertical direction.

[0068] Specifically, the diameter D of the crystal rod 10 is in mm, representing the depth H. x The unit is mm, the radius R of crystal rod 10 is mm, and the chord length L of crystal rod 10 is mm. x The unit is mm.

[0069] In the above embodiment, the diameter D of the crystal rod 10 is divided into n intervals 11 along the cutting direction Z, and a representative depth H is used for each interval 11. x Determine the corresponding 10-chord length L of the crystal rod. x This method can transform continuously varying cutting depths into segmented, defined chord length parameters, thereby simplifying the determination process of diamond wire speed 400 and improving the operability and efficiency of speed control.

[0070] Specifically, since the chord length of the crystal rod 10 corresponding to different cutting depths is continuously changing, calculating the corresponding chord length and linear velocity of the crystal rod 10 separately for each cutting depth would result in a relatively large computational burden for the linear velocity control process. This is addressed by dividing the diameter D of the crystal rod 10 into multiple intervals 11, and using a corresponding representative depth H within each interval 11. x Determine the 10-chord length L of the crystal rod x This allows all cutting depths within this interval 11 to share the same chord length L of the crystal rod 10. x This helps reduce the frequency of linear speed calculations and improves the real-time performance and stability of the linear speed control process.

[0071] In some embodiments, please refer to Figure 5 , representing depth H x For the cutting depth at the starting point of interval 11, in Figure 5 In this context, the cutting depth at the starting point is used as the representative depth H of interval 11.x Then the chord length L corresponding to interval 11 x like Figure 5 As shown; in some embodiments, please refer to Figure 6 , representing depth H x For the cutting depth at the end of interval 11, in Figure 6 In this context, the cutting depth at the endpoint is used as the representative depth H of interval 11. x Then the chord length L corresponding to interval 11 x like Figure 6 As shown; in some embodiments, please refer to Figure 7 , representing depth H x For the cutting depth at a point between the start and end points of interval 11, in Figure 7 In this context, the cutting depth at a point between the starting and ending points is taken as the depth H representing interval 11. x Then the chord length L corresponding to interval 11 x like Figure 7 As shown.

[0072] The starting point and the ending point are the points in section 11 that the diamond wire 400 cuts through.

[0073] Specifically, the value of n can be any one of 3, 4, 5, 6, D / 10, or any intermediate value between any two values. When the value of n is small, the number of intervals 11 is small, and the cutting depth range corresponding to a single interval 11 is large, which helps to reduce the frequency of linear speed calculation and simplify the control process; when the value of n is large, the number of intervals 11 is large, and the cutting depth range corresponding to a single interval 11 is small, which helps to make the chord length L of the crystal rod 10 corresponding to each interval 11 more consistent. x This more closely reflects the actual chord length variation at the cutting depth and helps improve the responsiveness of linear speed adjustment to changes in the cutting state. Therefore, when the value of n is within the range defined in the embodiments of this application, it can avoid both too few interval divisions leading to overly coarse linear speed adjustment and too many interval divisions leading to overly complex control processes, thus balancing control accuracy and control complexity.

[0074] In some embodiments, please refer to Figure 3 The steps for determining the minimum linear speed of the diamond wire 400 include: determining the minimum linear speed based on the distance L between the nozzles 710 and the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction.

[0075] The two nozzles 710 are located on both sides of the crystal rod 10.

[0076] In the above embodiment, by determining the minimum linear velocity based on the distance L between the two nozzles 710 and the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction, the minimum linear velocity can be adapted to the requirement that the cutting fluid moves with the diamond wire 400 and participates in cutting, thereby helping to ensure that the diamond wire 400 has basic fluid carrying capacity.

[0077] Since the distance L between the two nozzles 710 affects the effective transmission distance required to maintain the adhesion state after the cutting fluid adheres to the diamond wire 400, and the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction affects the duration of the cutting fluid from adhesion to detachment, by considering both L and Y, it is also beneficial to allow an appropriate amount of cutting fluid to enter the cutting area, thereby facilitating the cooling and cleaning effects of the cutting fluid, ensuring the cutting force of the diamond wire 400, and thus improving the stability of the cutting process, product quality, and yield.

[0078] Specifically, when the distance L between the two nozzles 710 is large, the transmission distance required for the cutting fluid to maintain its attached state after adhering to the diamond wire 400 is relatively long. In this case, if the linear velocity is too low, the cutting fluid is more likely to detach from the diamond wire 400 before reaching the cutting area, thus requiring a relatively high minimum linear velocity. When the distance L between the two nozzles 710 is small, the transmission distance required for the cutting fluid to maintain its attached state after adhering to the diamond wire 400 is relatively short, thus requiring a relatively low minimum linear velocity. Simultaneously, when the separation distance Y is small, it indicates that the cutting fluid is more likely to detach from the diamond wire 400 in the vertical direction, and its time in the attached state is relatively short, thus requiring a relatively high minimum linear velocity. When the separation distance Y is large, it indicates that the distance the cutting fluid needs to travel in the vertical direction to detach from the diamond wire 400 is relatively large, and its time in the attached state is relatively long, thus requiring a relatively low minimum linear velocity. Therefore, by determining the minimum linear speed based on the distance L between the two nozzles 710 and the separation distance Y, it is possible to avoid the cutting fluid from leaving the diamond wire 400 too early due to an excessively low minimum linear speed, and also to avoid increasing the operating burden due to an excessively high minimum linear speed. This is beneficial for balancing the fluid carrying requirements and the stability of the cutting process.

[0079] In some embodiments, determining the minimum linear velocity based on the distance L between the two nozzles 710 and the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction includes: determining the fluid carrying distance L based on the distance L between the two nozzles 710. d The separation time T is determined based on the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction. The separation time T is used to characterize the fluid-carrying capacity of the diamond wire 400. The fluid-carrying distance L is then used to determine the separation time T. d The minimum linear velocity V is determined by the separation time T. min .

[0080] Specifically, the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction refers to the distance at which the cutting fluid falls completely below the diamond wire 400 in the vertical direction and will not rejoin it. Specifically, because the diamond wire 400 has a bowing effect during cutting, the cutting fluid may be above the diamond wire 400 due to inertia; in this case, the cutting fluid is not considered to have detached from the diamond wire 400. Similarly, the separation time T also refers to the time during which the cutting fluid falls completely below the diamond wire 400 in the vertical direction and will not rejoin it.

[0081] The reason for setting the separation distance Y and separation time T is that when the cutting fluid separates from the diamond wire 400, but the cutting fluid is above the diamond wire 400, the cutting fluid will still move towards the crystal rod 10 and achieve the expected effect of the cutting fluid.

[0082] In the above embodiment, the liquid carrying distance L is first determined based on the distance L between the two nozzles 710. d Then, the separation time T is determined based on the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction, and further based on the fluid carrying distance L. d The minimum linear velocity V is determined by the separation time T. min It can make the minimum linear velocity V min The settings are adapted to both the horizontal transmission requirements and vertical detachment characteristics of the cutting fluid, thus helping to ensure that the diamond wire 400 has basic fluid carrying capacity.

[0083] Specifically, the distance L between the two nozzles 710 affects the effective transmission distance required to maintain the adhesion of the cutting fluid after it adheres to the diamond wire 400; the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction affects the duration of the cutting fluid's journey from adhesion to detachment. Therefore, by considering both L and Y simultaneously, the minimum linear velocity V can be minimized. min Matching the cutting fluid's movement with the diamond wire 400 and its participation in cutting, this facilitates the entry of an appropriate amount of cutting fluid into the cutting area, and helps to exert the cooling and cleaning effects of the cutting fluid. This further helps to ensure the cutting force of the diamond wire 400, thereby improving the stability of the cutting process, product quality, and yield.

[0084] Separation time T is used to characterize the fluid-carrying capacity of the diamond wire 400. A shorter separation time T indicates a shorter retention time of the cutting fluid after it adheres to the diamond wire 400. If the wire speed is too low in this case, the cutting fluid is more likely to detach from the diamond wire 400 before reaching the cutting area. Therefore, the minimum required wire speed V... min Relatively high; when the separation time T is long, it indicates that the cutting fluid adheres to the diamond wire 400 and remains there for a longer period of time, therefore the minimum required linear velocity V is higher. minIt can be relatively low. Meanwhile, when the liquid distance L... d When the speed is large, it indicates that the cutting fluid needs to travel a longer distance with the diamond wire (400°) to meet the fluid carrying requirements. Therefore, the minimum required wire speed V is... min Relatively high; when the liquid distance L d When the value is small, the minimum linear velocity V required is... min It can be relatively low. Therefore, based on the liquid-carrying distance L... d The minimum linear velocity V is determined by the separation time T. min This can avoid the minimum linear speed V min Too low a temperature would cause the cutting fluid to prematurely detach from the diamond wire (400), while also avoiding the minimum linear velocity (V). min Setting the value too high increases the operating burden, which is beneficial for balancing liquid carrying capacity and the stability of the cutting process.

[0085] In some embodiments, the liquid-carrying distance L d This can be determined based on the distance L between the two nozzles 710. For example, the liquid carrying distance L. d We can take half the distance L between the two nozzles 710, that is: L d =L / 2.

[0086] By employing the above method, the required transmission distance of the cutting fluid as it moves with the diamond wire 400 can be quantitatively determined based on the distance L between the two nozzles 710, thereby improving the minimum linear velocity V. min Determine the clarity and operability of the process.

[0087] In some embodiments, the separation time T can be determined based on the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction. Specifically, the separation time T can be measured experimentally or calculated theoretically. Therefore, the fluid-carrying capacity of the diamond wire 400 can be quantitatively characterized based on the duration required for the cutting fluid to detach from the diamond wire 400, which is beneficial for improving the minimum linear velocity V. min The degree of matching between the settings and actual working conditions.

[0088] In some embodiments, the minimum linear velocity V min Satisfy: V min =L d / T; where L d The distance of the fluid is indicated by T, which represents the time it takes for the cutting fluid to detach from the diamond wire 400.

[0089] By using the above relationship, the minimum linear velocity V can be determined. min The setting process is transformed from qualitative judgment to quantitative determination, which is beneficial to improving the minimum linear velocity V. minThe clarity and feasibility of the settings.

[0090] In some embodiments, determining the separation time T based on the separation distance Y required for the cutting fluid to detach from the diamond wire 400 in the vertical direction includes: The separation distance Y is divided into the first distance Y1 required for the cutting fluid to detach from the diamond wire 400 and the second distance Y2 after the cutting fluid continues to move after detaching from the diamond wire 400. The separation distance Y satisfies: Y = Y1 + Y2. The first time T1 is determined based on the first distance Y1, the acceleration due to gravity, and the friction between the cutting fluid and the diamond wire 400; The second time T2 is determined based on the second distance Y2 and the gravitational acceleration; The separation time T is determined based on the first time T1 and the second time T2, and the separation time T satisfies: T = T1 + T2.

[0091] In the above embodiments, by dividing the process of the cutting fluid detaching from the diamond wire 400 into two stages, a first time T1 and a second time T2, the determination of the separation time T can more closely reflect the actual detachment process of the cutting fluid, thereby improving the accuracy of the separation time T in characterizing the fluid-carrying capacity of the diamond wire 400. Specifically, the first time T1 is used to characterize the duration of adhesion between the cutting fluid and the diamond wire 400. Since the diamond wire 400 may have wire bowing during the cutting process, and the cutting fluid is still attached to the diamond wire 400 in this stage, the motion state of the cutting fluid in the first stage is affected not only by gravity but also by the frictional force between the cutting fluid and the diamond wire 400. Therefore, by determining the first time T1 based on the first distance Y1, the gravitational acceleration, and the frictional force between the cutting fluid and the diamond wire 400, it is possible to more accurately reflect the detachment characteristics of the cutting fluid in the adhered state.

[0092] Furthermore, the second time T2 is used to characterize the duration of the cutting fluid's continued movement after detaching from the diamond wire 400. Specifically, although the cutting fluid no longer adheres to the diamond wire 400 after detaching, it still moves horizontally due to inertia, and the diamond wire 400 continues to move downwards. Therefore, during this stage, the cutting fluid may still be above the diamond wire 400, and it can be considered that the cutting fluid has not yet left the effective liquid-carrying range of the diamond wire 400. The cutting fluid can still move towards the crystal rod 10 and still produce the expected cutting effect. Thus, by determining the second time T2 based on the second distance Y2 and gravitational acceleration, it is beneficial to characterize the duration of the cutting fluid remaining within the effective liquid-carrying range after detaching from the adhesive state, thereby more accurately reflecting the effective time of the cutting fluid's actual participation in the liquid-carrying process.

[0093] Therefore, by ensuring that the separation time T satisfies T=T1+T2, it is possible to characterize both the duration of adhesion between the cutting fluid and the diamond wire 400, and the duration of the cutting fluid remaining within the effective fluid-carrying range after detaching from the adhesive state. This facilitates a more accurate evaluation of the fluid-carrying capacity of the diamond wire 400 and helps to improve the minimum linear velocity V. min The degree of matching between the settings and actual working conditions.

[0094] In some embodiments, the first time T1 can be determined based on the first distance Y1 and the actual acceleration a1 of the cutting fluid in the first stage. Since the cutting fluid adheres to the diamond wire 400 in the first stage, the motion state of the cutting fluid in this stage is affected by the frictional force between the cutting fluid and the diamond wire 400. If the mass of the cutting fluid is m, the gravitational acceleration is g, and the frictional force between the cutting fluid and the diamond wire 400 in the vertical direction is F... f Then the actual acceleration a1 in the first stage can satisfy: a1=(mg-F f ) / m.

[0095] Furthermore, the first time T1 can satisfy: T1=(2Y1 / a1) 0.5 .

[0096] In some embodiments, the effect of friction between the cutting fluid and the diamond wire 400 is characterized as a roughness enhancement coefficient u, then the actual acceleration a1 in the first stage can also satisfy: a1=(1-u)g.

[0097] Furthermore, the first time T1 can satisfy: T1=(2Y1 / ((1-u)g)) 0.5 .

[0098] In some embodiments, the second time T2 can be approximately determined based on the second distance Y2 and the gravitational acceleration g. For example, when air resistance and other minor effects are ignored, the second time T2 can approximately satisfy: T2=(2Y2 / g) 0.5 .

[0099] By adopting the above method, the continued motion process of the cutting fluid after it leaves the diamond wire 400 can be characterized as the motion process corresponding to the second distance Y2 under the action of gravity, which helps to simplify the calculation process of the second time T2.

[0100] In some embodiments, after determining the first time T1 and the second time T2, the total separation time T satisfies: T = T1 + T2.

[0101] Furthermore, after determining the total separation time T, the minimum linear velocity V min Based on the liquid carrying distance L d And the separation time T is determined, for example, satisfying: V min =L d / T.

[0102] The minimum linear velocity V can be achieved through the above method. min This is also compatible with the duration of the cutting fluid adhering to the diamond wire 400 and the duration of time it remains within the effective fluid-carrying range after detaching from the adhesive state, thus helping to improve the minimum linear speed V. min The degree of matching between the settings and actual working conditions.

[0103] For example, Y1 can be 0.1mm, Y2 can be 0.022mm, therefore, Y can be 0.122mm.

[0104] The first time interval T1 is used to characterize the duration of adhesion between the cutting fluid and the diamond wire 400. Since there is friction between the cutting fluid and the diamond wire 400 during this stage, the frictional force F between the cutting fluid and the diamond wire 400 is... f It can satisfy: F f =umg, where u is the roughness enhancement coefficient.

[0105] For example, u can be 0.8. Thus, the actual acceleration a1 of the cutting fluid in the first stage can satisfy: a1=(1-u)g=0.2g.

[0106] Furthermore, at the first time step T1, the following condition can be met: T1 = (2Y1 / a1) 0.5 .

[0107] For example, when Y1 is 0.1 mm and g is 10 m / s², T1 can be 0.010 s.

[0108] The second time T2 is used to characterize the duration of the cutting fluid's continued movement after detaching from the diamond wire at a distance of 400 mm until it leaves the effective fluid-carrying range. The second time T2 can satisfy: T2 = (2Y² / g) 0.5 .

[0109] For example, when Y2 is 0.022mm and g is 10m / s², T2 can be approximately 0.002s.

[0110] Therefore, the separation time T satisfies: T = T1 + T2. For example, when T1 is 0.010s and T2 is 0.002s, T is 0.012s.

[0111] In some embodiments, the distance L between the nozzles 710 can be 0.30m, and the liquid carrying distance L...d We can take half of L, that is, L d =0.15m. Furthermore, the minimum linear velocity V min Satisfy: V min =L d / T. Therefore, when L d When the distance is 0.15m and the time T is 0.012s, the minimum linear velocity V min It can be 12.5 m / s.

[0112] In some embodiments, the maximum linear velocity is determined based on the maximum permissible centrifugal force of the grooved wheel 300.

[0113] In the above embodiments, by determining the maximum linear speed based on the maximum permissible centrifugal force of the grooved wheel 300, the maximum linear speed can be matched with the load-bearing capacity of the grooved wheel 300 and its fixed structure. This helps to avoid excessive stress on the grooved wheel 300 due to excessive linear speed, and helps to ensure the safety and stability of the crystal rod cutting equipment.

[0114] Furthermore, since the second stage requires increasing the line speed to enhance the cutting ability of the remaining resin board 20, setting an upper limit on the maximum line speed can ensure the cutting ability of the second stage while avoiding deformation of the grooved wheel 300, failure of the fixing structure, and equipment abnormalities caused by excessive line speed. This helps to balance cutting ability, equipment safety, and cutting stability.

[0115] Furthermore, when the maximum linear speed is reasonably constrained, the vibration and structural deformation caused by excessive force on the grooved wheel 300 can be reduced, which helps to reduce the fluctuation of the diamond wire 400's operating state and helps to ensure the stability of the relative position between the diamond wire 400 and the crystal rod 10, thereby improving the stability of the cutting process, product quality, and yield.

[0116] In some embodiments, the Geneva 300 fixing structure includes a plurality of bolts for fixing the Geneva 300 to the main shaft 200. The maximum allowable tensile force borne by the bolts can be used as the upper limit of the load-bearing capacity of the Geneva 300 fixing structure. When the centrifugal force generated by the Geneva 300 at a corresponding linear velocity is not greater than the maximum allowable tensile force of the Geneva 300 fixing structure, the linear velocity can be considered to meet the structural load-bearing requirements. Therefore, the maximum allowable tensile force of the Geneva 300 fixing structure can be determined first from the allowable tensile force of the bolts, then the maximum allowable centrifugal force of the Geneva 300 can be determined from the maximum allowable tensile force, and finally the maximum linear velocity V can be determined accordingly. max .

[0117] In some embodiments, please refer to Figure 3 Based on the mass m, gyration radius r, and maximum allowable centrifugal force F of the Geneva 300, determine the maximum linear velocity V. max .

[0118] In some embodiments, the maximum linear velocity V max Satisfy: V max =(Fr / m) 0.5 ; Where m represents the mass of Geneva 300, in kg, 30 ≤ m ≤ 60; r represents the radius of rotation of Geneva 300, in m, 0.14 ≤ r ≤ 0.18; and F represents the maximum permissible centrifugal force of Geneva 300, in N, 1.5 × 10⁻⁶. 5 ≤F≤1×10 6 V max The unit is m / s, 30≤V max ≤50.

[0119] It should be noted that the specific values ​​of the mass m, the radius of rotation r, and the maximum allowable centrifugal force F of the Geneva 300 are matched to ensure that, according to V max =(Fr / m) 0.5 Determined maximum linear velocity V max It falls within the aforementioned maximum linear speed range.

[0120] In some embodiments, the derivation can be performed as follows: First, determine the maximum allowable tensile force F of a single bolt. b The maximum allowable tensile force F of a single bolt b Satisfy: F b =σA s .

[0121] Multiple bolts are radially inserted into the grooved wheel 300 and the main shaft 200 to form a fixing structure, thereby securing the grooved wheel 300 and the main shaft 200. σ represents the tensile strength of the bolt, with units of MPa, where 600 ≤ σ ≤ 1000. s A represents the effective area of ​​the bolt. s The unit is mm 2 ,20≤A s ≤40.

[0122] If the bolt is a standard part, A s It can be obtained by looking up a table.

[0123] If the thread is a standard part, σ can be obtained by looking up the table based on the bolt material grade.

[0124] The maximum allowable tensile force F that the Geneva 300 fixed structure can withstand allow Satisfy: F allow =kF b =kσA s .

[0125] Where k represents the number of bolts fixing the grooved wheel 300.

[0126] The maximum allowable tensile force F that the fixed structure of the Geneva 300 can withstand. allow The maximum permissible centrifugal force F of the Geneva 300 is: F = F allow .

[0127] Meanwhile, the Geneva 300 is at its maximum linear speed V max The centrifugal force generated below can satisfy: F=mV max ² / r.

[0128] Where m represents the mass of Geneva 300 and r represents the rotation radius of Geneva 300.

[0129] Maximum linear speed V max Satisfy: V max =(Fr / m) 0.5 .

[0130] In some embodiments, the maximum linear velocity V max With minimum linear velocity V min It satisfies the preset ratio relationship.

[0131] In the above embodiment, by making the maximum linear velocity V max With minimum linear velocity V min By satisfying the preset ratio, the variation range of the wire speed of the diamond wire 400 between different stages can be constrained, which helps to avoid cutting fluctuations caused by excessive differences in wire speed between the first and second stages, and helps to ensure the smoothness of the wire speed switching process.

[0132] At the same time, due to the minimum linear velocity V min This is used to ensure that the diamond wire 400 has basic liquid-carrying capacity, while the maximum wire speed V max To improve the cutting capability of the remaining resin board 20 in the second stage, the minimum linear speed V can also be minimized by limiting the ratio between the two. min With maximum linear speed V max The systems coordinate with each other under the same linear velocity, which helps to balance liquid requirements, cutting capacity and cutting stability.

[0133] In some embodiments, the maximum linear velocity V max With minimum linear velocity V min Satisfy: V max / V min <3.

[0134] Because it is the maximum linear velocity V max With minimum linear velocity V min The ratio of V to V is such that the ratio will not be less than 1, meaning the ratio further satisfies: 1 < V. max / Vmin <3.

[0135] In the above embodiment, by making the maximum linear velocity V max With minimum linear velocity V min Satisfy V max / V min <3 can constrain the range of line speed changes between the first and second stages, which helps to avoid excessive acceleration during line speed switching and reduces the risk of line breakage or coil breakage.

[0136] Meanwhile, in the second stage, where it is necessary to increase the cutting ability of the remaining resin board 20 by increasing the line speed, the maximum line speed V is increased. max With minimum linear velocity V min By limiting the ratio between them to less than 3, it is possible to ensure that the second stage has a high cutting capacity while avoiding mechanical shock and operational fluctuations caused by excessive increase in line speed. This helps to ensure the stability of the cutting process and improve product quality and yield.

[0137] Specifically, when V max / V min When the value is small, it indicates the maximum linear velocity V max Relative to the minimum linear velocity V min The increase is relatively small, which helps to reduce fluctuations during line speed switching and improves the stability of diamond wire 400 operation; when V max / V min A larger value indicates a higher maximum linear velocity V. max Relative to the minimum linear velocity V min The increase in V is significant, which is beneficial for improving the cutting ability in the second stage, but it also makes it easier to increase the acceleration during line speed switching. Therefore, when V max / V min When the value is less than 3, the second stage can have a sufficient increase in linear speed compared to the first stage, which is beneficial to improving the cutting ability in the subsequent cutting process. At the same time, it can avoid excessive acceleration due to excessive changes in linear speed, which is beneficial to reducing the risk of wire breakage and ensuring the stability of the cutting process.

[0138] Specifically, V max / V min The value of V can be any one of 1.5, 2, 2.5, 2.8, 2.9, or any value between any two values. max / V min When the value of is close to 1, the maximum linear velocity V max With minimum linear velocity V min The differences between them are small, which helps to improve the smoothness of line speed switching; when V max / Vmin When the value of is close to 3, the maximum linear velocity V max With minimum linear velocity V min The differences between them are relatively large, which is beneficial for enhancing the cutting ability in the second stage. Therefore, in V max / V min Within the range of less than 3, the maximum linear speed V can be adjusted according to actual cutting requirements. max With minimum linear velocity V min The ratio between them is set to balance the stability of line speed switching and subsequent cutting capability.

[0139] In some embodiments, the following steps are also included: Set the target temperature; Obtain the detection temperature of the crystal rod cutting equipment; Compare the target temperature and the detection temperature, and adjust the temperature of the crystal rod cutting equipment.

[0140] In the above embodiments, by setting a target temperature, obtaining the detection temperature of the crystal ingot cutting equipment, and adjusting the temperature of the crystal ingot cutting equipment based on the comparison between the target temperature and the detection temperature, the temperature rise of the crystal ingot cutting equipment during the cutting process can be actively controlled, thereby helping to reduce the thermal deformation of the crystal ingot cutting equipment caused by heat generation. Especially when the wire speed of the diamond wire 400 is increased, the crystal ingot cutting equipment is more prone to generating more heat compared to when the speed is not increased; by adjusting the temperature of the crystal ingot cutting equipment, the degree of heat transfer along the transfer path of the crystal ingot cutting equipment can be reduced, thereby helping to reduce the change in the relative displacement between the diamond wire 400 and the crystal ingot 10, which in turn helps to ensure cutting accuracy and cutting stability, and improves wafer yield.

[0141] If the crystal ingot cutting equipment continues to heat up during the cutting process, thermal deformation may occur in the frame 100, spindle 200, drive assembly 500, or stage 800. This can cause changes in the relative position between the diamond wire 400 and the crystal ingot 10, thereby affecting the stability of the cutting trajectory and cutting state. By comparing the target temperature and the detection temperature and adjusting the temperature of the crystal ingot cutting equipment accordingly, the temperature of the crystal ingot cutting equipment can be kept within a relatively reasonable range. This helps to suppress thermal deformation and reduce cutting fluctuations caused by heat accumulation. Furthermore, by introducing temperature control during the cutting process, it is also beneficial to block or weaken the heat transfer along two heat transfer paths: diamond wire 400, grooved wheel 300, spindle 200, frame 100, transmission component 600, drive assembly 500; and diamond wire 400, grooved wheel 300, spindle 200, frame 100, stage 800. This further reduces the impact of heat transfer on the cutting state.

[0142] In some embodiments, the target temperature can be preset according to the cutting conditions. For example, the target temperature can be set according to the diamond wire speed of 400, the size of the crystal rod 10, the cutting stage, or the ambient temperature, thereby making the temperature control better adaptable to different operating conditions.

[0143] The detected temperature refers to the ambient temperature detected at the location of the cutting equipment performing the cutting method; for example, it is the room temperature detected in the room where the cutting equipment is located. The detected temperature can be obtained by reading a thermometer located in the room. The target temperature is 22°C to 26°C. The maximum target temperature can be 26°C, and the minimum target temperature can be 22°C.

[0144] In some embodiments, the detected temperature can be the temperature of a target component in the crystal rod cutting equipment. The target component can be at least one or more of the following: frame 100, spindle 200, drive assembly 500, transmission component 600, and stage 800. By obtaining the detected temperature of the target component, it is possible to more accurately reflect the heat accumulation situation, thereby improving the targeting of temperature regulation.

[0145] In some embodiments, adjusting the temperature of the ingot cutting equipment may include adjusting the flow rate, velocity, or heat transfer intensity of the cooling medium. By changing the supply state of the cooling medium, it is advantageous to dynamically adjust the temperature of the ingot cutting equipment based on the deviation between the detected temperature and the target temperature, thereby improving the flexibility and response speed of temperature control.

[0146] In some embodiments, when the detected temperature is higher than the target temperature, the flow rate of the cooling medium can be increased to improve the cooling capacity; when the detected temperature is close to or lower than the target temperature, the flow rate of the cooling medium can be reduced to avoid overcooling. This approach helps to reduce temperature fluctuations during the temperature regulation process while ensuring effective cooling.

[0147] The cutting method provided in this application will be described below with reference to specific embodiments: Example 1 Please refer to Table 1, which shows an example of parameters for Example 1 in the first stage. n is 19, H1 to H... 19 Please refer to the second column of the table below for the possible values, L1 to L. 19 Please refer to column 3 of the table below for the value of a, where a is 0.025 m / (s·mm). Please refer to column 5 of the table below for the value of the linear velocity V. min Take 25 m / s.

[0148] Table 1:

[0149] In some embodiments, please refer to Table 2, which shows an example of parameters for the second stage of Embodiment 1. Embodiment 1 divides the process of cutting the remaining resin board 20 into three cutting control steps. The depth of each cutting control step in the second stage can be set according to the preset depth of the resin board 20, the speed-up capability of the diamond wire 400, and the cutting control requirements, and can be the same as or different from the depth of each interval 11 in the first stage.

[0150] In this embodiment, after the crystal rod 10 and the diamond wire 400 move relative to each other along the cutting direction Z to a preset position, the target linear velocity of the diamond wire 400 is adjusted to the maximum linear velocity V. max Due to the limitations of the crystal rod cutting equipment's speed-up capability, the actual wire speed of the diamond wire 400 may not reach its maximum wire speed V in the first cutting control step. max And in the second and third cutting control steps, the maximum linear velocity V is reached. max This improves the cutting efficiency of the redundant cutting stage of the resin board 20 and allows the resin board 20 to be cut to a preset depth.

[0151] Table 2:

[0152] Comparative Example 1 Please see Figure 12 In Comparative Example 1, the linear velocity V remained constant at 27 m / s throughout the entire cutting process. That is, in Comparative Example 1, the linear velocity V was 27 m / s in both the first and second stages. Figure 12 The vertical axis represents the linear velocity in m / s, and the horizontal axis represents the cutting depth in mm. Figure 12 The triangle with a dotted line in the diagram represents the change in linear velocity in Comparative Example 1.

[0153] Please refer to Table 1 and, in conjunction with the linear speed setting of Comparative Example 1, the linear speed control methods in the first stage differ between Example 1 and Comparative Example 1. Specifically, in Example 1, the linear speed V in the first stage varies with the chord length L of the crystal rod. x The linear velocity V changes with the change, and shows a trend of first increasing and then decreasing; in Comparative Example 1, the linear velocity V in the first stage remains at 27 m / s.

[0154] Please see Figure 9 , Figure 9 The vertical axis represents warpage in μm, and the horizontal axis, from left to right, represents Comparative Example 1 and Example 1, respectively.

[0155] Through observation Figure 9It can be seen that the warpage of 272 wafers produced using the dicing method in Comparative Example 1 was measured, with an average warpage of 5898 μm and a standard deviation of 1522 μm; the warpage of 186 wafers produced using the dicing method in Example 1 was measured, with an average warpage of 4018 μm and a standard deviation of 1618 μm.

[0156] In this case, the standard deviation of the warpage of the wafer produced by the dicing method in Example 1 is similar to that of the wafer produced by the dicing method in Comparative Example 1. However, the average warpage of the wafer produced by the dicing method in Example 1 is significantly smaller than that of the wafer produced by the dicing method in Comparative Example 1. Therefore, it can be considered that Example 1 has improved the problem of high warpage.

[0157] Specifically, please refer to Figure 10 , Figure 10 The vertical axis represents the nanometer morphology in nm, and the horizontal axis, from left to right, represents Comparative Example 1 and Example 1, respectively.

[0158] Through observation Figure 10 It can be seen that the average nanostructure of 270 wafers produced using the dicing method in Comparative Example 1 was 10 nm, and the standard deviation was 2 nm; the average nanostructure of 186 wafers produced using the dicing method in Example 1 was 8 nm, and the standard deviation was 2 nm.

[0159] In this case, the standard deviation of the nanomorphology of the wafer produced by the dicing method in Example 1 is equal to the standard deviation of the nanomorphology of the wafer produced by the dicing method in Comparative Example 1. However, the average value of the nanomorphology of the wafer produced by the dicing method in Example 1 is significantly smaller than the average value of the nanomorphology of the wafer produced by the dicing method in Comparative Example 1. Therefore, it can be considered that Example 1 has improved the problem of high nanomorphology.

[0160] Comparative Example 2 Please refer to Table 3, which shows an example of the parameters for Comparative Example 2 in the first stage. n is 19, H1 to H... 19 Please refer to the second column of the table below for the possible values, L1 to L. 19 Please refer to column 3 of the table below for the value of a, where a is 0.025 m / (s·mm). Please refer to column 5 of the table below for the value of the linear velocity V. min Take 25 m / s.

[0161] Table 3:

[0162] Please refer to Table 4, which shows an example of the parameters for Comparative Example 2 in the second stage.

[0163] Comparative Example 2 divides the process of cutting the remaining resin board 20 into three cutting control steps. The depth of each cutting control step in the second stage can be set according to the preset depth of the resin board 20 and the cutting control requirements, and can be the same as or different from the depth of each interval 11 in the first stage.

[0164] Table 4:

[0165] Please refer to Tables 1, 2, 3, and 4, as well as... Figure 2 and Figure 12 Example 1 and Comparative Example 2 use the same cutting method in the first stage, the difference being the different linear speed control method in the second stage. Specifically, in Example 1, V is increased to V in the second stage. max In Comparative Example 2, V remained at 25.00 m / s throughout the second stage and maintained a constant velocity. Figure 12 The square dotted line in the diagram represents the change in linear velocity in Comparative Example 2.

[0166] Please see Figure 11 After 115 cuts using the cutting method in Example 1, the number of times the crystal rod 10 was not completely cut was 0, and the number of times the crystal rod 10 was completely cut was 115, with an incomplete cut rate of only 0% and a cut rate of 100%. After 462 cuts using the cutting method in Comparative Example 2, the number of times the crystal rod 10 was not completely cut was 9, and the number of times the crystal rod 10 was completely cut was 453, with an incomplete cut rate of 1.95% and a cut rate of 98.05%.

[0167] Therefore, by increasing the linear speed to the maximum linear speed in the second stage, the cutting efficiency of the second stage can be improved, the cutting ability of the diamond wire 400 can be enhanced, the bow depth of the diamond wire 400 can be reduced, which is conducive to the complete cutting of the crystal rod 10, reducing the incomplete cutting rate of the crystal rod 10, and increasing the cutting rate of the crystal rod 10.

[0168] The penetration rate is the ratio of the number of times the crystal rod 10 is completely cut in multiple cuts to the total number of cuts. Correspondingly, the non-penetration rate is the ratio of the number of times the crystal rod 10 is not completely cut in multiple cuts to the total number of cuts.

[0169] Accordingly, this application also provides a crystal rod cutting device; please refer to [link to relevant documentation]. Figure 8The device includes a frame 100, a spindle 200, a grooved wheel 300, a diamond wire 400, a drive assembly 500, a transmission component 600, a platform 800, and a controller. The spindle 200 is rotatably mounted on the frame 100. The grooved wheel 300 is connected to the spindle 200. The diamond wire 400 is wound around the grooved wheel 300. The drive assembly 500 and the grooved wheel 300 are located on opposite sides of the frame 100. The drive assembly 500 is connected to the spindle 200 via the transmission component 600. The platform 800 is used to connect the resin plate 20 and is movably connected to the frame 100, and is located on the same side of the frame 100 as the grooved wheel 300. The controller is configured to perform a crystal rod cutting method as described in any of the above embodiments to control the wire speed of the diamond wire 400.

[0170] In some embodiments, the crystal rod cutting equipment further includes a liquid supply mechanism 700 for supplying cutting fluid to the diamond wire 400. The liquid supply mechanism 700 includes two nozzles 710, which are respectively disposed on both sides of the crystal rod 10.

[0171] In some embodiments, the controller is configured to adjust the rotational speed of the drive assembly 500 to change the rotational speed of the spindle 200 and the pulley 300 via the transmission member 600, thereby adjusting the linear speed of the diamond wire 400 wound on the pulley 300.

[0172] In the above embodiments, by setting up a frame 100, a main shaft 200 rotatably passing through the frame 100, a grooved wheel 300 connected to the main shaft 200, and a diamond wire 400 wound around the grooved wheel 300, an execution structure for cutting the crystal rod 10 and the resin plate 20 can be formed. At the same time, by setting up a drive assembly 500 and a transmission component 600, and making the drive assembly 500 drively connected to the main shaft 200 through the transmission component 600, the drive of the main shaft 200, the grooved wheel 300, and the diamond wire 400 can be realized, which helps to ensure the stability of the diamond wire 400 operation and provides a structural basis for the adjustment of the diamond wire 400's wire speed. Furthermore, the controller is configured to execute the aforementioned crystal rod cutting method. Therefore, the crystal rod cutting equipment can not only complete the cutting of the crystal rod 10 and the resin plate 20, but also adopt different linear speed control methods in the first stage of cutting the crystal rod 10 and the second stage of cutting the remaining resin plate 20. This is beneficial to taking into account the requirements of geometric parameters and edge chipping control in the crystal rod 10 cutting stage, as well as the requirements of cutting capacity in the redundant cutting stage of the resin plate 20, thereby improving the cutting quality and overall yield.

[0173] Meanwhile, the fluid supply mechanism 700 provides cutting fluid to the diamond wire 400, which helps ensure that the cutting fluid participates in the cutting process and facilitates its cooling and cleaning effects on the cutting area. This reduces the impact of heat accumulation on the cutting process and removes debris generated during cutting, further ensuring the cutting force of the diamond wire 400 and improving the stability of the cutting process.

[0174] Furthermore, the stage 800 is used to connect the resin plate 20, and the stage 800 is movably connected to the frame 100, and is located on the same side of the frame 100 as the grooved wheel 300. Since the crystal rod 10 is connected to the stage 800 through the resin plate 20, by setting the stage 800 and making it and the grooved wheel 300 located on the same side of the frame 100 and able to move towards each other, the diamond wire 400 can sequentially cut the crystal rod 10 and the resin plate 20 during the cutting process, which is beneficial to realizing the cutting path and cutting stage division corresponding to the aforementioned crystal rod cutting method. Furthermore, by setting the drive assembly 500 and the grooved wheel 300 on both sides of the frame 100 respectively, a relatively separate drive side and cutting side can be formed on both sides of the frame 100, which is beneficial to optimizing the structural layout of the equipment and providing installation space for the cutting area and the transmission area respectively, thereby helping to ensure the stability of the equipment operation.

[0175] Furthermore, by coordinating the controller with the aforementioned execution structure, drive structure, liquid supply structure, and stage 800 structure, the crystal rod cutting equipment can structurally and controllably support the implementation of the aforementioned crystal rod cutting method. This facilitates the integration of linear speed control, liquid supply control, and the cutting execution process, and improves the adaptability of the crystal rod cutting equipment to different cutting stages, thereby enhancing product quality and yield.

[0176] In some embodiments, the transmission component 600 is a belt. A drive pulley is mounted on the output shaft of the drive assembly 500, and a driven pulley is mounted on the main shaft 200. The belt is wound around the drive pulley and the driven pulley. The controller adjusts the rotational speed of the output shaft of the drive assembly 500, thereby changing the rotational speed of the drive pulley and the main shaft 200 through belt transmission. Since the Geneva wheel 300 is connected to the main shaft 200, the rotational speed of the Geneva wheel 300 varies with the rotational speed of the main shaft 200. The diamond wire 400 is wound around the Geneva wheel 300, therefore the linear speed of the diamond wire 400 varies with the rotational speed of the Geneva wheel 300.

[0177] In some embodiments, without considering belt slippage, the linear velocity of the belt is equal to the circumferential linear velocity of the driving pulley and also equal to the circumferential linear velocity of the driven pulley. If the output shaft speed of the drive assembly 500 is n1 (r / min), the diameter of the driving pulley is D1 (m), the speed of the main shaft 200 is n2 (r / min), and the diameter of the driven pulley is D2 (m), then the linear velocity of the belt is v. b v b The unit is m / s, which satisfies: v b =πD1n1 / 60=πD2n2 / 60.

[0178] Therefore, the rotational speed n2 of the spindle 200 can satisfy: n2=(D1 / D2)n1.

[0179] Since the Geneva wheel 300 is connected to the main shaft 200, in some embodiments, the Geneva wheel 300 and the main shaft 200 are coaxially fixed. Therefore, the rotational speed n3 of the Geneva wheel 300, where n3 is in r / min, can satisfy: n3 = n2.

[0180] If the diameter of the grooved wheel 300 is D3, and the unit of D3 is meters, then the linear velocity v of the diamond wire 400 is... w v w The unit is m / s, which satisfies: v w =πD3n3 / 60.

[0181] Based on the above relationships, it can be concluded that in some embodiments, the linear velocity v of the diamond wire 400 is... w The following relationship exists between the output shaft speed n1 of the drive assembly 500 and the speed n1: v w =(πD3 / 60)·(D1 / D2)n1.

[0182] Therefore, by establishing the transmission relationship between the output shaft speed of the drive assembly 500, the belt linear speed, the spindle speed 200, the pulley speed 300, and the diamond wire speed 400, the controller can have a clear transmission basis for adjusting the diamond wire speed 400, thereby improving the accuracy and operability of the wire speed control. Furthermore, by setting the transmission ratio between the driving and driven pulleys, the output speed of the drive assembly 500 can be matched to ensure that the spindle 200, pulley 300, and diamond wire 400 achieve suitable operating states, thus balancing drive capability and wire speed adjustment requirements.

[0183] In some embodiments, the ingot cutting equipment further includes a temperature control system 900 for adjusting the temperature of a target component, which is one of the frame 100, spindle 200, drive assembly 500, transmission component 600, and stage 800.

[0184] In the above embodiments, by setting a temperature control system 900 and adjusting the temperature of the target component using the temperature control system 900, the temperature rise of the crystal ingot cutting equipment during the cutting process can be controlled, thereby helping to reduce the thermal deformation of the target component caused by heat. Especially when the wire speed of the diamond wire 400 is increased, the crystal ingot cutting equipment is more prone to generating more heat than when the speed is not increased. By adjusting the temperature of the target component in the frame 100, spindle 200, drive assembly 500, transmission component 600 and stage 800, the degree of heat transfer along the crystal ingot cutting equipment transfer path can be reduced, thereby reducing the change in the relative displacement between the diamond wire 400 and the crystal ingot 10, which in turn helps to ensure cutting accuracy and cutting stability, and improves wafer yield.

[0185] Specifically, the heat generated by the diamond wire 400 during the cutting process can be transferred sequentially along the path of diamond wire 400, grooved wheel 300, spindle 200, frame 100, transmission component 600, and drive assembly 500, or sequentially along the path of diamond wire 400, grooved wheel 300, spindle 200, frame 100, and stage 800. By using the temperature control system 900 to regulate the temperature of the target components along the above heat transfer path, it is beneficial to block or reduce the heat transfer along the heat transfer path, thereby reducing the impact of heat accumulation on the drive-side structure and the stage 800 side structure, and reducing structural deformation and cutting fluctuations caused by heat transfer.

[0186] Meanwhile, when the target component is the frame 100, adjusting the temperature of the frame 100 can help reduce the impact of thermal deformation of the frame 100 on the relative positional relationship of the spindle 200, the grooved wheel 300, and the stage 800. When the target component is the spindle 200, adjusting the temperature of the spindle 200 can help reduce the impact of thermal deformation of the spindle 200 on the rotation state of the grooved wheel 300 and the running state of the diamond wire 400. When the target component is the drive assembly 500 or the transmission component 600, adjusting the temperature of the drive assembly 500 or the transmission component 600 can help reduce the impact of heat accumulation on the drive side on transmission stability. When the target component is the stage 800, adjusting the temperature of the stage 800 can help reduce the impact of thermal deformation of the stage 800 on the mounting position and cutting position accuracy of the crystal rod 10. Therefore, by adjusting the temperature of different target components, it is possible to suppress the generation of thermal deformation from different heat transfer paths, thereby further improving the stability of the cutting process, product quality, and yield.

[0187] In some embodiments, the target component may be the frame 100. In this case, by adjusting the temperature of the frame 100, it is beneficial to control the overall temperature rise of the frame 100 and to reduce the thermal deformation of the frame 100 as a supporting structure.

[0188] In some embodiments, the target component can be the spindle 200. In this case, by adjusting the temperature of the spindle 200, it is beneficial to control the temperature rise of the spindle 200 and to reduce the impact of thermal deformation of the spindle 200 on the rotational accuracy of the grooved wheel 300 and the operating state of the diamond wire 400.

[0189] In some embodiments, the target component may be the drive assembly 500 or the transmission component 600. In this case, by regulating the temperature of the drive assembly 500 or the transmission component 600, it is beneficial to reduce heat accumulation on the drive side and to ensure the stability of the power transmission process.

[0190] In some embodiments, the target component may be a stage 800. In this case, by adjusting the temperature of the stage 800, it is beneficial to reduce the impact of thermal deformation of the stage 800 on the mounting state of the resin plate 20 and the crystal rod 10, and to ensure the stability of the cutting position.

[0191] In some embodiments, please refer to Figure 8 The temperature control system 900 includes a cooling assembly 910, which includes a flow channel 911, a heat exchanger, a temperature sensor 913, and an adjustment assembly 914. The flow channel 911 is disposed on the target component; both ends of the flow channel 911 are connected to the heat exchanger; the temperature sensor 913 is used to detect the temperature of the target component; the adjustment assembly 914 is disposed on the flow channel 911 and is used to adjust the flow rate in the flow channel 911 according to the signal from the temperature sensor 913.

[0192] In the above embodiments, by providing a flow channel 911 in the target component and connecting both ends of the flow channel 911 to a heat exchanger, the cooling medium can flow within the flow channel 911 and exchange heat with the target component, thereby helping to reduce the temperature of the target component and minimize thermal deformation caused by heating. Furthermore, by providing a temperature sensor 913 to detect the temperature of the target component and using an adjustment component 914 to adjust the flow rate within the flow channel 911 based on the signal from the temperature sensor 913, the cooling intensity can be adjusted according to the actual temperature rise of the target component, thereby improving the targeting and timeliness of temperature regulation and enhancing the stability of temperature control.

[0193] Specifically, when the temperature of the target component rises, the temperature sensor 913 detects the temperature change, and the regulating component 914 adjusts the flow rate in the flow channel 911 accordingly to change the heat exchange between the cooling medium and the target component, thereby improving the cooling effect on the target component. When the temperature of the target component drops to near the target temperature, the regulating component 914 can also adjust the flow rate in the flow channel 911 accordingly to avoid overcooling. Thus, through the cooperation of the temperature sensor 913, the regulating component 914, the flow channel 911, and the heat exchanger, a closed-loop temperature regulation process can be formed, which helps to keep the temperature of the target component within a relatively reasonable range.

[0194] Meanwhile, since the target component is one of the frame 100, spindle 200, drive assembly 500, transmission component 600 and stage 800, by setting the flow channel 911 on the target component and cooling it, it is also beneficial to block or reduce the heat transfer along the heat transfer path of diamond wire 400, grooved wheel 300, spindle 200, frame 100, transmission component 600, drive assembly 500 and diamond wire 400, grooved wheel 300, spindle 200, frame 100 and stage 800 in sequence. This is beneficial to reduce the structural deformation caused by heat transfer and to reduce the change in the relative displacement between diamond wire 400 and crystal rod 10, thereby helping to ensure cutting accuracy, cutting stability and wafer yield.

[0195] In some embodiments, the flow channel 911 may be formed inside the target component, meaning the target component itself has the flow channel 911, and the flow channel 911 can communicate with external pipelines. By placing the flow channel 911 inside the target component, the cooling medium can be brought closer to the heat-generating area of ​​the target component, thereby improving heat exchange efficiency. In some embodiments, the flow channel 911 is formed by a cooling pipeline, which is connected to the surface of the target component or located inside the target component.

[0196] In some embodiments, the regulating component 914 can be a valve, such as a proportional valve. By adjusting the valve opening, the flow rate of the cooling medium in the flow channel 911 can be continuously regulated, thereby improving the precision of temperature control.

[0197] In some embodiments, the heat exchanger can be connected to an external cold source to cool the cooling medium within the flow channel 911. By providing a heat exchanger, it is beneficial to maintain the heat exchange capacity of the cooling medium, thereby ensuring a continuous cooling effect.

[0198] In some embodiments, the temperature sensor 913 may be disposed on the target component or near the heat-generating area of ​​the target component. By placing the temperature sensor 913 closer to the heat-generating area, it is beneficial to more accurately reflect the temperature changes of the target component, thereby improving the responsiveness of temperature regulation.

[0199] In other embodiments of this application, please refer to Figure 8 The temperature control system 900 includes a cooling assembly 910, which includes an air conditioner 915, a temperature sensor 913, and a regulating assembly 914. The temperature sensor 913 is used to detect the temperature of the target component. The regulating assembly 914 is used to adjust the heat exchange effect of the air conditioner 915 according to the signal from the temperature sensor 913. The air conditioner 915 is used to reduce the temperature of the environment in which the target component is located.

[0200] In the above embodiments, by setting the air conditioner 915 to cool the environment surrounding the target component, the temperature of the environment around the target component can be reduced, thereby reducing the heat transfer due to the temperature difference between the target component and the external environment. Furthermore, by using the temperature sensor 913 to detect the temperature of the target component and using the adjustment component 914 to adjust the output of the air conditioner 915 according to the signal from the temperature sensor 913, the cooling intensity can be dynamically adjusted according to the temperature rise of the target component, thereby improving the timeliness and specificity of temperature control and reducing thermal deformation of the target component caused by temperature rise. This also helps to reduce the variation in the relative displacement between the diamond wire 400 and the crystal rod 10, thus improving cutting accuracy, cutting stability, and wafer yield.

[0201] In some embodiments, the temperature control system 900 includes a plurality of cooling components 910, each cooling component 910 being used to cool at least one target component. A portion of the plurality of cooling components 910 includes a flow channel 911, and another portion of the plurality of cooling components 910 includes an air conditioner 915.

[0202] In some embodiments, the cooling assembly 910 further includes a heat exchanger for removing heat from the air conditioner 915 or the heat exchange medium in the flow channel 911, so that the heat exchange medium in the air conditioner 915 and the flow channel 911 can continue to cool the cutting equipment.

[0203] The foregoing has provided a detailed description of a crystal rod cutting method and crystal rod cutting equipment provided in the embodiments of this application. Specific examples have been used in this application to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method for cutting crystal rods, characterized in that, The crystal rod cutting method includes the following steps: The chord length of the crystal rod (10) corresponding to the cutting depth is determined based on the cutting depth; Determine the product of the chord length of the crystal rod (10) and a preset adjustment coefficient; The minimum linear speed of the diamond wire (400) and the product of the two are determined as the linear speed of the diamond wire (400), and the diamond wire (400) is controlled to run according to the linear speed of the diamond wire (400) to cut the crystal rod (10). After the crystal rod (10) and the diamond wire (400) move relative to each other along the cutting direction (Z) to a preset position, the linear speed of the diamond wire (400) is adjusted to the maximum linear speed, and the diamond wire (400) is controlled to run according to the maximum linear speed to cut the remaining resin board (20). The steps for determining the minimum linear velocity of the diamond wire (400) include: The liquid carrying distance L is determined based on the distance L between the two nozzles (710). d ; The separation distance Y required for the cutting fluid to detach from the diamond wire (400) in the vertical direction is divided into a first distance Y1 required for the cutting fluid to detach from the diamond wire (400) and a second distance Y2 for the cutting fluid to continue moving after detaching from the diamond wire (400). The separation distance Y satisfies: Y = Y1 + Y2. The first time T1 is determined based on the first distance Y1, the gravitational acceleration, and the frictional force between the cutting fluid and the diamond wire (400); The second time T2 is determined based on the second distance Y2 and the gravitational acceleration; The separation time T is determined based on the first time T1 and the second time T2, and the separation time T satisfies: T = T1 + T2. The separation time T is used to characterize the liquid-carrying capacity of the diamond wire (400). According to the liquid carrying distance L d The minimum linear velocity V is determined by the separation time T. min ; The steps for determining the maximum linear velocity include: The maximum linear velocity V is determined based on the mass m, the radius of rotation r, and the maximum permissible centrifugal force F of the Geneva (300). max .

2. The crystal rod cutting method according to claim 1, characterized in that, The steps for determining the cutting depth include: The crystal rod (10) is divided into n intervals (11) along the cutting direction (Z), where n satisfies: 3≤n≤D / 10, n is an integer, and D is the diameter of the crystal rod; For each of the intervals (11), determine the representative depth H. x and the representative depth H x The cutting depth is determined as the depth used by the diamond wire (400) to cut into the interval (11).

3. The crystal rod cutting method according to claim 1, characterized in that, The maximum linear velocity V max With the minimum linear velocity V min Satisfy: V max / V min <3.

4. The crystal rod cutting method according to claim 1, characterized in that, The crystal rod cutting method further includes the following steps: Set the target temperature; Obtain the detection temperature of the crystal rod cutting equipment; The target temperature and the detection temperature are compared, and the temperature of the crystal rod cutting equipment is adjusted accordingly.

5. A crystal rod cutting device, characterized in that, include: Rack (100); A main shaft (200) is rotatably mounted on the frame (100). A Geneva wheel (300) is connected to the main shaft (200); Diamond wire (400), the diamond wire (400) is wound around the grooved wheel (300); A drive assembly (500) and the Geneva wheel (300) are located on opposite sides of the frame (100); The drive assembly (500) is connected to the main shaft (200) via the drive component (600); A platform (800) for connecting resin plates (20), the platform (800) being movably connected to the frame (100) and located on the same side of the frame (100) as the grooved wheel (300); A controller configured to perform the ingot cutting method as described in any one of claims 1 to 4 to control the wire speed of the diamond wire (400).

6. The crystal rod cutting equipment according to claim 5, characterized in that, The crystal rod cutting equipment also includes a temperature control system (900) for adjusting the temperature of a target component, which is one of the frame (100), the spindle (200), the drive assembly (500), the transmission component (600), and the stage (800).

7. The crystal rod cutting equipment according to claim 6, characterized in that, The temperature control system (900) includes a cooling assembly (910), which comprises: A flow channel (911) is provided on the target component; The heat exchanger, wherein the two ends of the flow channel (911) are respectively connected to the heat exchanger; Temperature sensor (913) for detecting the temperature of the target component; An adjustment component (914) is disposed in the flow channel (911) for adjusting the flow rate in the flow channel (911) according to the signal of the temperature sensor (913).

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