A low particulate high stability gas delivery assembly

Abstract

This invention discloses a low-particle, high-stability gas delivery component, relating to the field of semiconductor wafer manufacturing equipment technology. The gas delivery component includes a metal substrate with a gas inlet, a gas equalization chamber, and multiple high aspect ratio nozzles or microchannels. A stress-relieving multilayer structure is formed on the gas contact inner surface of the nozzles or microchannels, continuously covering the inlet edge, corner region, and deep hole inner wall region of the nozzles or microchannels. The stress-relieving multilayer structure sequentially includes a buffer layer, a transition layer, and a main film layer along the direction away from the metal substrate. This invention solves the problems of film cracking, peeling, particle contamination, nozzle size drift, and unstable gas distribution caused by thermal expansion mismatch, corrosive gas erosion, and stress concentration on the inner surface of high aspect ratio nozzles or microchannels in traditional single-layer inorganic ceramic protective films.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wafer manufacturing equipment technology, and in particular to a low-particle, high-stability gas delivery component. Background Technology

[0002] In semiconductor wafer deposition, etching, and surface treatment equipment, gas delivery assemblies are typically located upstream or at the top of the reaction chamber to introduce precursor gases, reactive gases, cleaning gases, or corrosive process gases into the wafer processing area. Typical gas delivery assemblies include gas spray heads, gas distributors, gas delivery manifolds, and gas delivery components with high aspect ratio nozzles or microchannels.

[0003] For 6-inch, 8-inch, or 12-inch wafer processing equipment, the nozzle opening size of the gas delivery components, the level of particle generation on the inner wall, and the consistency of flow distribution between each nozzle directly affect the level of particles on the wafer surface, the uniformity of reactive gas distribution, the uniformity of deposited film thickness, the uniformity of etching, and the continuous operating life of the equipment.

[0004] In ALD, PEALD, CVD, PECVD, or Etch processes, gas delivery components may be exposed to corrosive gases such as HF, HCl, BF3, HBr, WF6, Cl2, BCl3, NF3, or fluorine- and chlorine-containing gases for extended periods. Existing technologies typically form an inorganic ceramic protective film, such as Al2O3, Y2O3, YF3, or YOF, on the inner surface of the metal to improve corrosion resistance.

[0005] However, traditional single-layer inorganic ceramic protective films cannot fully meet the long-term operational requirements of semiconductor wafer processing equipment. This is because there is a significant mismatch in the coefficients of thermal expansion between the metal substrate and the inorganic ceramic film; for example, the linear coefficient of thermal expansion of SS316L is approximately 16 × 10⁻⁶. -6 K -1 The linear thermal expansion coefficient of Al2O3 is approximately 4.2 × 10⁻⁶. -6 K -1 When the equipment is repeatedly subjected to thermal cycling in the temperature range of 25℃ to 300℃ or higher, the metal / ceramic interface is prone to generating large thermal stress.

[0006] For gas delivery components with high aspect ratio nozzles or microchannels, the above problems are even more severe. Traditional single-layer ceramic membranes are prone to stress concentration at nozzle inlet edges, corner areas, deep hole inlets, and the inner walls of flow channels, leading to membrane cracks, localized peeling, or corrosion channels. This problem not only reduces the component's corrosion resistance life but can also create wafer particle contamination sources and cause localized blockage of nozzles or microchannels, resulting in uneven gas distribution.

[0007] Furthermore, the inlet edges, corner regions, and inner walls of deep holes in high aspect ratio nozzles or microchannels are not typical planar coating environments. These areas are simultaneously subjected to thermal mismatch stress caused by thermal cycling, chemical erosion from corrosive process gases, and periodic scouring from pulsed or purging airflows. When the protective film exhibits local discontinuities or abrupt thickness changes in these areas, it is prone to forming through cracks, corrosion channels, or particle release sources, leading to nozzle opening size drift, pressure drop variations, and flow distribution deviations among multiple nozzles.

[0008] Therefore, there is an urgent need in the field for a gas delivery component structure specifically designed for semiconductor wafer processing equipment. This structure should be able to maintain low particle count, corrosion resistance, stress relief, and stable gas distribution within high aspect ratio nozzles or microchannels, thereby improving the reliability of key components and process stability of semiconductor wafer processing equipment. Summary of the Invention

[0009] This invention provides a low-particle, high-stability gas delivery component that can solve the problems of film cracking, peeling, particle contamination, nozzle size drift, and unstable gas distribution caused by thermal expansion mismatch, corrosive gas erosion, and stress concentration on the inner surface of traditional single-layer inorganic ceramic protective films in high aspect ratio nozzles or microchannels.

[0010] To address the above problems, the present invention provides a low-particle, high-stability gas delivery assembly, wherein the gas delivery assembly is disposed upstream or top of the reaction chamber of a semiconductor wafer processing equipment and provides process gas to the wafer processing area; The gas delivery assembly includes a metal substrate, a gas equalization chamber, and airflow channels. The metal substrate is provided with a gas inlet, the gas equalization chamber is connected to the gas inlet, and a plurality of airflow channels are located on one side wall of the gas equalization chamber facing the wafer processing area. The gas contact inner surface of the airflow channel is formed with a stress-relieving multilayer structure, which continuously covers the inlet edge, corner area and deep hole inner wall area of ​​the airflow channel. The stress-relieving multilayer structure includes, in sequence, a buffer layer, a transition layer, and a main film layer along the direction away from the metal substrate. The coefficient of thermal expansion of the transition layer is between that of the buffer layer and the main film layer. The metal substrate, the buffer layer, the transition layer, and the main film layer form a stress-relieving structure with a progressively decreasing coefficient of thermal expansion along the direction away from the metal substrate.

[0011] The present invention provides a low-particle, high-stability gas delivery component, which, compared with the prior art, has, but is not limited to, the following beneficial effects: This invention utilizes a stress-relieving multilayer structure with a gradient of thermal expansion coefficients on the entire gas contact inner surface of high aspect ratio nozzles or microchannels. The thermal expansion coefficients decrease progressively from the buffer layer to the transition layer and then to the main film layer. Combined with strictly controlled thickness continuity, this effectively disperses thermal stress generated during thermal cycling, preventing interfacial stress concentration that could lead to film cracking and peeling, thus reducing the release of particulate contaminants at the source. Simultaneously, the continuous and complete film layer ensures a stable flow cross-sectional area for each nozzle, maintaining consistent flow distribution among nozzles and preventing flow distribution deviations from affecting wafer processing uniformity. Ultimately, this meets the requirements of semiconductor wafer processing for low particulate contamination and high gas delivery stability.

[0012] Preferably, the airflow channel is a high aspect ratio nozzle or microchannel, and the aspect ratio of the high aspect ratio nozzle or microchannel is 10:1 to 200:1.

[0013] Preferably, the buffer layer is an organic-inorganic hybrid material layer, the transition layer is an inorganic material layer, and the main film layer is an inorganic anti-corrosion material layer.

[0014] Preferably, the thickness continuity deviation of the buffer layer, the transition layer, and the main membrane layer between the inlet edge, the corner region, and the deep hole inner wall region is no greater than ±20%.

[0015] Preferably, the thickness of the buffer layer is 5 nm to 100 nm, the thickness of the transition layer is 10 nm to 200 nm, and the thickness of the main film layer is 50 nm to 500 nm.

[0016] Preferably, the difference in the linear thermal expansion coefficient between adjacent film layers is 1×10⁻⁶. -6 K -1 Up to 10×10 -6 K -1 .

[0017] Preferably, when the total thickness of the main film layer is greater than or equal to 100 nm, the main film layer is a nano-stacked film, and the nano-stacked film includes an alternately arranged first sublayer and a second sublayer, the thickness of the first sublayer and the second sublayer being 5 nm to 20 nm.

[0018] Preferably, the first sublayer material is selected from Al2O3, Y2O3 or AlF3, and the second sublayer material is selected from TiO2, YF3, YOF or AlTiOx.

[0019] Preferably, the metal matrix is ​​stainless steel, aluminum alloy, nickel-based alloy, or stainless steel material with passivated surface.

[0020] Preferably, this application also provides a semiconductor wafer processing apparatus, including a reaction chamber and a gas delivery assembly disposed upstream or top of the reaction chamber, wherein the gas delivery assembly is any one of the gas delivery assemblies described above. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a low-particle, high-stability gas delivery component and a semiconductor wafer processing device according to an embodiment of the present invention. Figure 2 This is a schematic diagram of the structure of the metal matrix and the stress relief multilayer structure in an embodiment of the present invention; Figure 3 This is a schematic diagram of the specific structure of the stress relief multilayer structure according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a nanolayered film in an embodiment of the present invention.

[0023] Explanation of reference numerals in the attached figures: 100 Semiconductor wafer processing equipment; 110 Gas equalization chamber; 120 Wafer processing area; 130 Airflow channel; 200 Metal substrate; 210 Gas inlet; 300 Stress relief multilayer structure; 310 Buffer layer; 320 Transition layer; 330 Main film layer; 331 First sublayer; 332 Second sublayer. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this application clearer, specific embodiments of this application are described clearly and completely below with reference to the accompanying drawings. It should be understood that the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments described in this application without creative effort will fall within the scope of protection of this application.

[0025] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in the specification of this application is for the purpose of describing specific embodiments only and is not intended to limit this application; the terms "comprising," "including," "having," "containing," "comprise," etc., in the specification, claims, and accompanying drawings of this application are open-ended terms, indicating that a method comprises one or more steps, or an apparatus comprises one or more elements, but not excluding the inclusion of other steps or elements. The terms "first," "second," etc., in the specification, claims, or accompanying drawings of this application are used to distinguish different objects, not to describe a specific order or hierarchy. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0026] In the description of this application, it should be understood that the terms "upper", "lower", "left", "right", "front", "rear", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0027] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "attachment" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0028] It should be emphasized that when the term "comprising / including" is used in this specification, it is used to explicitly indicate the presence of the stated feature, integer, step, or component, but does not exclude the presence or addition of one or more other features, integers, steps, parts, or groups of features, integers, steps, or parts.

[0029] like Figures 1 to 4 As shown, an embodiment of the present invention provides a low-particle, high-stability gas delivery component, which is disposed upstream or top of the reaction chamber of a semiconductor wafer processing equipment 100, and provides process gas to the wafer processing area. The gas delivery assembly includes a metal substrate 200, a gas equalization chamber 110, and an airflow channel 130. The metal substrate 200 is provided with a gas inlet 210, and the gas equalization chamber 110 is connected to the gas inlet 210. A plurality of the airflow channels 130 are located on one side wall of the gas equalization chamber 110 facing the wafer processing area 120. The gas contact inner surface of the airflow channel 130 is formed with a stress relief multilayer structure 300, which continuously covers the inlet edge, corner area and deep hole inner wall area of ​​the airflow channel 130. The stress relief multilayer structure 300 includes, in sequence, a buffer layer 310, a transition layer 320 and a main film layer 330 along the direction away from the metal substrate 200. The coefficient of thermal expansion of the transition layer 320 is between that of the buffer layer 310 and the main film layer 330. The metal substrate 200, the buffer layer 310, the transition layer 320, and the main film layer 330 form a stress relief structure with a progressively decreasing coefficient of thermal expansion along the direction away from the metal substrate 200.

[0030] This invention utilizes a stress-relieving multilayer structure 300 with a gradient of thermal expansion coefficients to create a layered structure on the entire gas contact inner surface of a high aspect ratio nozzle or microchannel. The thermal expansion coefficients decrease progressively from the buffer layer 310 to the transition layer 320 and then to the main film layer 330. Combined with strictly controlled thickness continuity, this effectively disperses the thermal stress generated during thermal cycling, preventing stress concentration at the interface from causing film cracking and peeling, thus reducing the release of particulate contaminants at the source. Simultaneously, the continuous and complete film layer ensures a stable flow cross-sectional area for each nozzle, maintaining consistent flow distribution between nozzles and preventing flow distribution deviations from affecting wafer processing uniformity. Ultimately, this meets the requirements of semiconductor wafer processing technology for low particulate contamination and high gas delivery stability.

[0031] In this embodiment of the application, the airflow channel 130 is a high aspect ratio nozzle or microchannel, and the aspect ratio of the high aspect ratio nozzle or microchannel is 10:1 to 200:1.

[0032] Preferably, the depth-to-width ratio is between 20:1 and 100:1. In the first embodiment of this application, the depth-to-width ratio refers to the ratio of the effective depth of the nozzle or microchannel to the equivalent opening width.

[0033] In high aspect ratio nozzles or microchannels, process gases enter the deep-hole inner wall region through the inlet edge and eventually flow from the outlet to the wafer processing area. Due to the large aspect ratio, the gas flow behavior within the channel is highly sensitive to the surface condition of the inner wall. If local discontinuities, cracks, or peeling occur in the inner wall film, it will not only release particulate contaminants but also change the effective flow cross-sectional area within the channel, leading to changes in pressure drop and shifts in flow distribution.

[0034] In this embodiment, the buffer layer 310 is an organic-inorganic hybrid material layer, the transition layer 320 is an inorganic material layer, and the main film layer 330 is an inorganic anti-corrosion material layer.

[0035] The organic-inorganic hybrid material in the buffer layer 310 combines the flexibility of organic polymers with the density of inorganic materials, and its elastic modulus can be adjusted over a wide range. In a specific example, the buffer layer 310 can be formed by molecular layer deposition, thereby achieving conformal coverage on the inner wall of high aspect ratio pores.

[0036] Both the transition layer 320 and the main film layer 330 can be formed by atomic layer deposition to ensure a dense, uniform, and pinhole-free coverage on the inner wall of the high aspect ratio microstructure.

[0037] Through the above-mentioned hierarchical arrangement, the buffer layer 310 provides stress absorption, the transition layer 320 provides thermal expansion coefficient transition, and the main film layer 330 provides corrosion isolation. The three work together to form a complete stress relief and corrosion protection system.

[0038] In this embodiment of the application, the thickness continuity deviation of the buffer layer 310, the transition layer 320 and the main film layer 330 between the inlet edge, the corner area and the deep hole inner wall area is no greater than ±20%.

[0039] This application provides a second embodiment, in which, preferably, the thickness continuity deviation is no greater than ±15%.

[0040] Thickness continuity deviation can be calculated using the following formula: Thickness continuity deviation = (measured maximum thickness) (Minimum thickness measured) / Average thickness × 100% The measurement locations include at least the inlet edge, corner region, and inner wall region of the nozzle or microchannel. Thickness continuity deviation can be evaluated using cross-sectional scanning electron microscopy, transmission electron microscopy, ellipsometric measurement, or equivalent film thickness measurement.

[0041] In high aspect ratio nozzles or microchannels, if the film only forms a thick coating near the inlet while creating weak areas on the inner wall of the deep hole, corrosive gases can easily penetrate along these weak areas, forming corrosion channels and ultimately leading to film peeling and particle release. If the thickness change at corners is too abrupt, these areas are prone to becoming stress concentration points and crack initiation points during thermal cycling.

[0042] By controlling the thickness continuity deviation within ±20%, the stress relief path and corrosion resistance path are kept continuous at the inlet edge, corner area and deep hole inner wall area, thereby avoiding performance degradation caused by excessively thin or thick local thickness and effectively reducing the risk of particle release and flow drift.

[0043] This application also provides a third embodiment, which is mainly used as a verification of synergistic effect. In this third embodiment, the following comparative samples are set: Comparative Example 1 is a metal substrate 200 with only a single layer of inorganic anti-corrosion main film layer; Comparative Example 2 is a metal substrate 200 with an organic-inorganic hybrid buffer layer and an inorganic anti-corrosion main film layer, but without an inorganic transition layer with a thermal expansion coefficient between the two; Comparative Example 3 is a metal substrate 200 with an organic-inorganic hybrid buffer layer, an inorganic transition layer and an inorganic anti-corrosion main film layer, but the thickness continuity deviation of each film layer is not controlled at the inlet edge, corner area and deep hole inner wall area of ​​the nozzle or microchannel, that is, the deviation is greater than ±20%; The sample of the embodiment adopts the multilayer structure described in this invention, that is, the metal substrate 200 is composed of an organic-inorganic hybrid buffer layer, an inorganic transition layer and an inorganic anti-corrosion main film layer from the inside to the outside, and the thermal expansion coefficient between adjacent layers decreases step by step.

[0044] By subjecting the above samples to the same thermal cycling, corrosive gas exposure, inert gas purging, nozzle opening size measurement, multi-point flow rate testing, and particle detection, the effects of each structure on crack initiation, corrosion pathways, particle release, and flow rate deviation can be evaluated. Exemplary test results show that using only a single-layer anti-corrosion film or simply adding a buffer layer 310 is insufficient to simultaneously improve the stability of crack, particle, and flow rate distribution. However, this invention, through a combination of a low-modulus buffer layer 310, a gradient in the coefficient of thermal expansion, thickness continuity control, and an optional nano-layered main film layer, can simultaneously reduce the risk of thermal cycling cracking, particle release, and flow rate deviation between nozzles.

[0045] In this embodiment, the thickness of the buffer layer 310 is 5 nm to 100 nm, the thickness of the transition layer 320 is 10 nm to 200 nm, and the thickness of the main film layer 330 is 50 nm to 500 nm.

[0046] In the fourth embodiment provided in this application, preferably, the thickness of the buffer layer 310 is between 10 nm and 50 nm. Within this range, the thickness of the buffer layer 310 provides sufficient stress absorption capacity without increasing the risk of thermal stress accumulation due to excessive thickness.

[0047] Preferably, the thickness of the transition layer 320 is between 20 nm and 80 nm. Within this range, the thickness of the transition layer 320 effectively achieves a smooth transition in the coefficient of thermal expansion from the buffer layer 310 to the main film layer 330, while maintaining its own dense and defect-free structure.

[0048] Preferably, the thickness of the main film layer 330 is between 80 nm and 300 nm. Within this range, the thickness of the main film layer 330 provides sufficient corrosion resistance and isolation without causing cracking due to excessive intrinsic stress.

[0049] In the fourth embodiment, the metal substrate 200 may be SS316L stainless steel, aluminum alloy, nickel-based alloy, or stainless steel with passivated surface treatment. The organic-inorganic hybrid buffer layer may be alucone, zincone, titaniumone, or a combination thereof, with an elastic modulus of 20 GPa to 80 GPa. The inorganic transition layer may be TiO2, TiN, Y2O3, AlTiOx, AlYOx, or a combination thereof. The inorganic anti-corrosion main film layer may be Al2O3, Y2O3, YF3, YOF, AlF3, or a combination thereof.

[0050] In this embodiment, the difference in the linear thermal expansion coefficient between adjacent film layers is 1×10⁻⁶. -6 K -1 Up to 10×10 -6 K -1 .

[0051] This application also provides a fifth embodiment. In this embodiment, taking the specific combination of metal substrate 200 as SS316L stainless steel, buffer layer 310 as aluminum-based organic-inorganic hybrid material Alucone, transition layer 320 as TiO2, and main film layer 330 as Al2O3 as an example: the linear thermal expansion coefficient of SS316L is approximately 16 × 10⁻⁶. -6 K -1 Alucone's linear coefficient of thermal expansion is approximately 12 × 10⁻⁶. -6 K -1 The linear thermal expansion coefficient of TiO2 is approximately 8.5 × 10⁻⁶. -6 K -1 The linear thermal expansion coefficient of Al2O3 is approximately 4.2 × 10⁻⁶. -6 K -1 Therefore, a smooth gradient of thermal expansion coefficients can be formed.

[0052] By controlling the difference in thermal expansion coefficients between adjacent film layers within this range, excessive thermal shear stress at the interface can be avoided due to the large difference in thermal expansion coefficients between adjacent layers. At the same time, problems such as blurred interlayer interfaces and unclear functional distinctions due to the small difference can also be avoided.

[0053] In this embodiment of the application, when the total thickness of the main film layer 330 is greater than or equal to 100 nm, the main film layer 330 is a nano-stacked film, and the nano-stacked film includes an alternately arranged first sub-layer 331 and second sub-layer 332, the thickness of the first sub-layer 331 and the second sub-layer 332 is 5 nm to 20 nm.

[0054] To verify the stability of the multilayer structure of the present invention under the thermal cycling environment of semiconductor devices, a comparative test can be conducted on the traditional single-layer Al2O3 structure. Preferably, the thickness of the first sublayer 331 and the second sublayer 332 is independently 5nm to 15nm.

[0055] In the embodiments of this application, a nano-layered film refers to a multilayer composite film formed by alternating stacking of two or more different materials at nanoscale thickness.

[0056] By splitting a single thick film into a stacked structure of multiple nanoscale sublayers, the intrinsic stress of the main film layer 330 can be dispersed to multiple sublayer interfaces, avoiding stress concentration and accumulation within the single thick film. At the same time, each sublayer interface can block the path of continuous crack extension along the thickness direction of the main film layer 330, thereby significantly reducing the risk of through crack formation after thermal cycling.

[0057] In this embodiment of the application, the material of the first sublayer 331 is selected from Al2O3, Y2O3 or AlF3, and the material of the second sublayer 332 is selected from TiO2, YF3, YOF or AlTiOx.

[0058] Specifically, the first sublayer 331 can focus on chemical barrier capabilities, for example, Al2O3 and Y2O3 have excellent chemical stability against halogen-containing corrosive gases; the second sublayer 332 can focus on stress dispersion or interface blocking capabilities, for example, TiO2 has high intrinsic stress and good interfacial bonding characteristics, and YF3 and YOF exhibit excellent corrosion resistance in fluorine-containing environments.

[0059] In a specific example, the nanolayered film is a stacked structure of alternating Al2O3 and TiO2 layers. The Al2O3 sublayer mainly provides chemical barrier function against halogen corrosion, while the TiO2 sublayer mainly provides stress dispersion and interfacial barrier function.

[0060] In another example, the nanolayered film is a stacked structure of alternating Y2O3 and YOF, suitable for environments containing corrosive fluorine gases.

[0061] In this embodiment, the metal substrate 200 is stainless steel, aluminum alloy, nickel-based alloy, or stainless steel material with passivated surface.

[0062] The metal substrate 200 is stainless steel, aluminum alloy, nickel-based alloy, or stainless steel with a passivated surface. In one specific example, the metal substrate 200 is SS316L stainless steel; in another example, the metal substrate 200 is a nickel-based alloy; and in yet another example, the metal substrate 200 is stainless steel with a passivated surface, which further improves the adhesion between the substrate surface and the buffer layer 310.

[0063] In this embodiment of the application, a semiconductor wafer processing apparatus 100 is provided, including a reaction chamber and a gas delivery assembly disposed upstream or top of the reaction chamber, wherein the gas delivery assembly is any of the above-mentioned gas delivery assemblies.

[0064] The above-disclosed embodiments are merely a few specific examples of the present invention. However, the embodiments of the present invention are not limited thereto, and any variations that can be conceived by those skilled in the art should fall within the protection scope of the present invention.

Claims

1. A low-particle, high-stability gas delivery assembly, characterized in that, The gas delivery assembly is located upstream or top of the reaction chamber of the semiconductor wafer processing equipment (100) and provides process gas to the wafer processing area; The gas delivery assembly includes a metal substrate (200), a gas equalization chamber (110), and an airflow channel (130). The metal substrate (200) is provided with a gas inlet (210), the gas equalization chamber (110) is connected to the gas inlet (210), and a plurality of the airflow channels (130) are located on one side wall of the gas equalization chamber (110) facing the wafer processing area (120). The gas contact inner surface of the airflow channel (130) is formed with a stress relief multilayer structure (300), which continuously covers the inlet edge, corner area and deep hole inner wall area of ​​the airflow channel (130). The stress-relieving multilayer structure (300) includes, in sequence, a buffer layer (310), a transition layer (320), and a main film layer (330) in the direction away from the metal substrate (200). The coefficient of thermal expansion of the transition layer (320) is between that of the buffer layer (310) and the main film layer (330); The metal substrate (200), the buffer layer (310), the transition layer (320), and the main film layer (330) form a stress relief structure with a progressively decreasing coefficient of thermal expansion along the direction away from the metal substrate (200).

2. The low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The airflow channel (130) is a high aspect ratio nozzle or microchannel, and the aspect ratio of the high aspect ratio nozzle or microchannel is 10:1 to 200:

1.

3. The low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The buffer layer (310) is an organic-inorganic hybrid material layer, the transition layer (320) is an inorganic material layer, and the main film layer (330) is an inorganic anti-corrosion material layer.

4. The low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The thickness continuity deviation of the buffer layer (310), the transition layer (320), and the main membrane layer (330) between the inlet edge, the corner area, and the deep hole inner wall area is no greater than ±20%.

5. A low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The thickness of the buffer layer (310) is 5 nm to 100 nm, the thickness of the transition layer (320) is 10 nm to 200 nm, and the thickness of the main film layer (330) is 50 nm to 500 nm.

6. The low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The difference in the linear thermal expansion coefficient between adjacent film layers is 1×10 -6 K -1 Up to 10×10 -6 K -1 .

7. A low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, When the total thickness of the main film layer (330) is greater than or equal to 100 nm, the main film layer (330) is a nano-stacked film, which includes an alternately arranged first sublayer (331) and second sublayer (332), the thickness of the first sublayer (331) and the second sublayer (332) is 5 nm to 20 nm.

8. A low-particle, high-stability gas delivery assembly according to claim 7, characterized in that, The material of the first sublayer (331) is selected from Al2O3, Y2O3 or AlF3, and the material of the second sublayer (332) is selected from TiO2, YF3, YOF or AlTiOx.

9. A low-particle, high-stability gas delivery assembly according to claim 1, characterized in that, The metal substrate (200) is stainless steel, aluminum alloy, nickel-based alloy or stainless steel material with passivated surface.

10. A semiconductor wafer processing apparatus, characterized in that, It includes a reaction chamber and a gas delivery assembly disposed upstream or at the top of the reaction chamber, wherein the gas delivery assembly is the gas delivery assembly according to any one of claims 1 to 9.

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