Pressure measurement device, pressure gauge and semiconductor processing apparatus

Abstract

This invention discloses a pressure measuring device, a pressure gauge, and a semiconductor processing apparatus for a semiconductor process chamber. The pressure measuring device includes a pressure gauge comprising a sleeve and a sensor unit. The sleeve passes through a mounting hole in the chamber wall and is sealed and fixed. The sensor unit is housed within the inner cavity of the sleeve, at least partially located on the inner side of the outer surface of the chamber wall in the installed state. A perforated cover is provided at the chamber-side end of the inner cavity of the sleeve to quench passing plasma and protect the sensor unit. The pressure gauge employs a mutually sealed dual-cavity structure, housing the detection component and the circuit board respectively. The semiconductor processing apparatus integrates the aforementioned pressure measuring device, and is particularly suitable for atomic layer etching (ALE) equipment. This invention shortens the pressure transmission path, reduces measurement delay, accurately determines the process window state, improves equipment throughput and process yield, and simultaneously ensures the stability and lifespan of the sensor in a plasma environment.

Description

Technical Field

[0001] This invention relates to the field of pressure detection technology in semiconductor manufacturing processes, and specifically to an embedded vacuum pressure measuring device, a pressure gauge, and a semiconductor processing equipment containing the same. Background Technology

[0002] In semiconductor manufacturing processes, such as atomic layer etching (ALE), the pressure within the chamber needs to be switched rapidly between different target values, and the process can only begin after the pressure has basically stabilized to ensure consistency and repeatability of the process.

[0003] In existing technologies, pressure gauges (also known as vacuum gauges) are typically used to measure the pressure within a chamber. Relevant solutions can be found in published Chinese patent applications CN121122993A, CN121096914A, CN121790264A, and CN121768935A. The pressure gauge is generally located outside the chamber and connected to it via a connecting channel. Due to the existence of the connecting channel and the volume of the pressure gauge itself, there is a certain delay in the pressure gauge's measurement of changes in pressure within the chamber. The longer the connecting channel, the more pronounced the delay.

[0004] When process pressure changes slowly, or when the control logic is not sensitive to pressure fluctuations, this lag in pressure measurement is acceptable. However, when process pressure needs to be switched rapidly, especially when the switching time and the pressure gauge response time are on the same order of magnitude, this lag becomes unacceptable. For example, in the ALE process, the pressure inside the chamber needs to switch rapidly between high and low pressure repeatedly. After each switch, it is necessary to wait for the pressure to stabilize before the process can begin; that is, the pressure stabilization period corresponds to the process window period. If the pressure stabilization status is determined by the stability of the pressure gauge reading, then due to the measurement delay of the pressure gauge, the pressure inside the chamber may have actually stabilized for some time, but the pressure gauge reading has not yet stabilized. This leads to a loss of process window time. For processes that require hundreds or even thousands of cycles, the loss of tens of milliseconds of process window time per cycle will cumulatively reduce the equipment's capacity. At the same time, the lag in pressure feedback may cause the process to operate in a non-ideal pressure environment. That is, the actual pressure inside the process chamber has changed, but the pressure gauge has not reported this change in time, which will cause the process to run under non-ideal pressure conditions, thereby reducing product yield.

[0005] Therefore, there is an urgent need for a solution that can more quickly determine the stable pressure state within the chamber in order to solve the aforementioned problems in the existing technology. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of existing technologies and provide a pressure measuring device, a pressure gauge, and a semiconductor processing equipment. On one hand, the embedded mounting structure significantly shortens the pressure transmission path, reduces the volume of the transmission cavity, and lowers measurement delay, allowing pressure readings to follow real-time changes in the actual pressure within the chamber. This shortens the waiting time for pressure stabilization determination, reduces process window losses, and improves equipment throughput and process yield. On the other hand, the perforated cover plate protection structure at the chamber side end enables plasma quenching, preventing active particles from bombarding the sensor during close-range measurement, ensuring measurement accuracy and sensor lifespan, while balancing response speed and environmental tolerance.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] A pressure measuring device for a semiconductor process chamber includes a pressure gauge comprising a sensor unit and a sleeve. The sleeve is used to pass through a mounting hole in the wall of the process chamber and is sealed and fixed to the chamber wall. The sensor unit is housed in the inner cavity of the sleeve, and in the installed state, the sensor unit is at least partially located inside the outer surface of the chamber wall. A perforated cover is provided at one end of the sleeve facing the interior of the process chamber, the perforated cover covering the chamber-side end opening of the inner cavity, and a through detection hole is provided on the perforated cover, through which the inner cavity communicates with the interior of the process chamber. The perforated cover is configured to quench plasma passing through it to protect the sensor unit.

[0009] In some embodiments, a connecting flange is provided at one end of the sleeve located outside the cavity wall, and a sealing element is sandwiched between the connecting flange and the outer surface of the cavity wall, so that the sleeve forms a vacuum seal with the cavity wall of the process chamber through the connecting flange.

[0010] In some embodiments, multiple detection holes are provided, and the aspect ratio of each detection hole is not less than 2:1, so that the plasma active particles entering the detection hole will recombine and deactivate after colliding with the hole wall.

[0011] In some embodiments, the perforated cover is made of a conductor or semiconductor material, and the detection hole diameter is less than 5 mm.

[0012] In some embodiments, the pressure detection end face of the sensor unit is disposed facing the perforated cover plate, and a buffer gap is provided between the pressure detection end face and the perforated cover plate.

[0013] In some embodiments, the sensor unit is fixedly mounted in the inner cavity of the sleeve along the axial direction of the sleeve.

[0014] In some embodiments, the sensor unit includes a capacitive thin-film sensor or a piezoresistive vacuum sensor.

[0015] The present invention also provides a pressure gauge for a semiconductor process chamber, the pressure gauge comprising a sleeve and a sensor unit disposed in the inner cavity of the sleeve, the inner cavity comprising a first cavity and a second cavity, the end of the first cavity on the side of the measured medium being sealed by a perforated cover plate, the perforated cover plate having a through detection hole and being configured to quench plasma passing through it; the sensor unit comprising a detection component and a circuit board, the detection component being located in the first cavity, the circuit board being located in the second cavity, and the first cavity and the second cavity being vacuum sealed.

[0016] In some embodiments, the detection component includes an elastic thin film.

[0017] In some embodiments, a partition is provided between the first cavity and the second cavity. The partition has a through hole, and the detection component passes through the through hole. Its pressure detection end is located in the first cavity, and its wiring end is located in the second cavity. The detection component is airtightly connected to the partition.

[0018] In some embodiments, the inner diameter of the first cavity is smaller than the inner diameter of the second cavity, and an annular boss is formed at the junction of the first cavity and the second cavity; the sensor unit further includes a sealing plate, which is disposed between the detection component and the circuit board, and the outer periphery of the sealing plate is airtightly overlapped on the platform of the annular boss to divide the inner cavity into a first cavity and a second cavity that are vacuum sealed to each other.

[0019] The present invention also provides a semiconductor processing apparatus, including a process chamber, a gas supply system, a plasma generation system, a pumping system, and a pressure measuring device as described in any one of the preceding embodiments; the pressure measuring device is installed in the process chamber, the process chamber is provided with a base to support a substrate, and the pressure measuring device is used to detect the gas pressure in the process chamber.

[0020] In some embodiments, the semiconductor processing apparatus is an atomic layer etching apparatus; the atomic layer etching apparatus is configured to determine the process window state based on the detection signal of the pressure measuring device, and to start the etching process step after the pressure reaches a set value.

[0021] For pressure measurement devices in semiconductor process chambers, the sensor unit is embedded within a sleeve in the chamber wall, with at least a portion of the sensor located inside the outer surface of the chamber wall. This significantly shortens the pressure transmission path from the inside of the chamber to the sensor's detection surface, reduces the overall volume of the transmission cavity, lowers measurement delay, and allows the pressure gauge output to quickly follow actual pressure changes within the chamber. In rapid pressure switching processes such as atomic layer etching, this reduces the waiting time for pressure stabilization determination, minimizes process window losses per cycle, and effectively increases equipment throughput for multi-cycle batch processes. Simultaneously, it ensures real-time pressure feedback, preventing process steps from being executed under non-target pressure conditions, thus improving process consistency and product yield. A perforated cover plate at the chamber side of the sleeve quenches penetrating plasma particles, preventing direct plasma impact on the sensor's sensitive surface during close-range measurements, providing effective protection and ensuring the sensor's measurement accuracy and long service life.

[0022] For independently configured pressure gauges, a sleeve-type integrated structure is adopted, with a first and second sealed chamber inside. The detection component is placed in the first chamber that contacts the measured medium, while the circuit board is placed in the second chamber that isolates the medium. This ensures the response speed of pressure detection and prevents the process medium and plasma active particles from corroding the circuit components, thereby improving the reliability and environmental adaptability of the device. The end-hole cover plate is directly integrated into the end of the sleeve, giving the pressure gauge itself plasma protection capability. It can be directly embedded in the cavity wall for installation and use without the need for additional protective structures. It has strong adaptability and is easy to upgrade and modify existing equipment.

[0023] This invention integrates an embedded low-latency pressure measurement device into the system architecture, ensuring high synchronization between the pressure feedback signal and the actual pressure state of the chamber, significantly reducing detection lag. For equipment requiring repeated and rapid switching of process pressures, such as atomic layer etching, it can accurately determine the process window with stable pressure, eliminating invalid waiting time caused by measurement lag and effectively improving the processing capacity per unit time of a single chamber. Simultaneously, it prevents process steps from being executed under non-target pressure conditions, ensuring process consistency in each etching cycle and improving substrate processing yield. The integrated plasma protection structure at the system level ensures stable operation of the pressure gauge in long-term plasma process environments, reducing equipment maintenance frequency and operating costs. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope of the present invention. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1This is a schematic diagram of the installation of a pressure measuring device for a semiconductor process chamber according to an embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of a pressure gauge sleeve structure according to an embodiment of the present invention;

[0027] Figure 3 This is a partially enlarged cross-sectional view of the pressure gauge according to an embodiment of the present invention;

[0028] Figure 4 This is a partially enlarged cross-sectional view of the pressure gauge in another embodiment of the present invention;

[0029] Figure 5 This is a schematic diagram of a semiconductor processing device according to an embodiment of the present invention. Detailed Implementation

[0030] In one embodiment, combined Figures 1 to 4 As shown, the pressure measuring device for a semiconductor process chamber includes a pressure gauge 200, which is used to detect the gas pressure inside the process chamber 100.

[0031] The process chamber 100 has a mounting through hole 120 in its cavity wall 110. The sleeve 210 passes through the mounting through hole 120 and is sealed and fixed to the cavity wall 110. The pressure gauge 200 includes a sensor unit 230, which is housed in the inner cavity 220 of the sleeve 210. In the installed state, the sensor unit 230 is at least partially located inside the outer surface of the cavity wall 110, shortening the pressure transmission path and reducing measurement delay. A perforated cover plate 240 is provided at one end of the inner cavity 220 facing the interior of the process chamber 100. The perforated cover plate 240 covers the cavity-side end opening of the inner cavity 220 and connects the inner cavity 220 with the interior of the process chamber 100 through its own detection hole, ensuring normal transmission of pressure signals. The perforated cover plate 240 is configured to quench plasma passing through it, preventing active particles from contacting the sensor sensitive surface and protecting the sensor unit 230.

[0032] Compared to the traditional installation method that places the pressure gauge completely outside the chamber, this embedded arrangement shortens the pressure transmission path and significantly reduces the volume of the pressure transmission dead zone, enabling the sensor unit 230 to sense pressure changes within the process chamber 100 more quickly and sensitively.

[0033] In some embodiments, combined with Figures 2 to 4As shown, a connecting flange 211 is provided at one end of the sleeve 210 located outside the cavity wall 110. A sealing element 213 is sandwiched between the connecting flange 211 and the outer surface of the cavity wall 110. A vacuum seal is formed between the sleeve 210 and the cavity wall 110 of the process chamber 100 through the connecting flange 211, facilitating overall disassembly and maintenance. The sealing element 213 can be an O-ring, a metal gasket, or other suitable vacuum sealing element. By pressing the connecting flange 211 against the outer surface of the cavity wall 110 with fasteners such as bolts, the sealing element 213 undergoes elastic deformation, thereby forming a reliable vacuum seal between the sleeve 210 and the cavity wall 110, preventing gas in the process chamber 100 from leaking through the mounting through hole 120.

[0034] In some embodiments, a sealing groove 212 may be formed on the mating surface of the connecting flange 211 and the cavity wall 110, and the sealing element 213 is accommodated in the sealing groove 212, forming a vacuum seal by compression deformation. In practical applications, the sleeve 210 and the cavity wall 110 may also adopt other sealing and fixing methods such as welding, and are not limited to flange connection structures.

[0035] In some embodiments, combined with Figures 2 to 4 As shown, the perforated cover plate 240 has multiple through-holes 241, each with a length-to-diameter ratio of not less than 2:1. This allows plasma-active particles entering the detection holes 241 to undergo multiple collisions with the hole walls, resulting in recombination and deactivation, thus achieving a plasma quenching effect. The detection holes 241 can be evenly arranged in an array to ensure sufficient gas flow area and avoid additional obstruction to pressure transmission. The cross-sectional shape and arrangement density of the detection holes 241 can be adjusted according to the process scenario and are not limited to a single form.

[0036] The perforated cover 240 is configured to quench plasma passing through it, thus protecting the sensor unit 230. In plasma-based processes, the process chamber 100 contains a large number of plasma-active particles, including charged ions and free radicals. If these active particles directly bombard the pressure detection end face 231 of the sensor unit 230, they will cause physical damage and chemical corrosion to the sensor, affecting measurement accuracy and service life. The perforated cover 240 achieves plasma quenching through its detection hole structure: because the aperture of the detection hole 241 is very small and has a certain depth (i.e., the length-to-diameter ratio is not less than 2:1), after the plasma-active particles enter the detection hole 241, they will collide multiple times with the hole wall of the detection hole 241 before reaching the inner cavity 220. During the collision process, they lose energy and recombine into neutral particles, thereby losing their activity.

[0037] In some embodiments, the perforated cover 240 and the sleeve 210 are made of conductive or semiconductor materials, and have good plasma resistance and processing performance.

[0038] The perforated cover 240 is made of a conductive material such as stainless steel or aluminum, or a semiconductor material such as silicon. The surface of the conductive or semiconductor material can promote the recombination of charged particles, further enhancing the plasma quenching effect. After quenching by the perforated cover 240, only neutral gas molecules can enter the inner cavity 220 and reach the sensor unit 230, while plasma active particles are effectively blocked, thus ensuring the safe operation of the sensor unit 230.

[0039] The sleeve 210 is made of a conductive material such as stainless steel or aluminum, or a semiconductor material such as silicon. The detection hole 241 has a diameter of less than 5 mm. On the one hand, this reduces charge accumulation and prevents discharge at the tip of the sleeve 210. On the other hand, the perforated cover plate 240 and the sleeve 210 form an electromagnetic shield. The detection hole 241 has a diameter of less than 5 mm, which prevents radio frequency energy from entering the inner cavity 220 and provides electromagnetic protection for the sensor unit 230.

[0040] The chamber-side ends of the perforated cover plate 240 and the sleeve 210 can be fixed by welding to ensure connection strength and sealing performance; alternatively, they can be fixed by detachable connections such as threads and snaps to facilitate individual replacement and maintenance, and adapt to the protection requirements of different process scenarios.

[0041] In some embodiments, combined with Figure 3 , Figure 4 As shown, the pressure detection end face 231 of the sensor unit 230 is positioned facing the perforated cover plate 240, allowing the incoming gas to act positively on the detection surface, further improving the response speed. A buffer gap is provided between the pressure detection end face 231 and the perforated cover plate 240, which homogenizes and buffers the high-speed airflow, reducing measurement fluctuations caused by airflow impact and improving detection stability. This buffer gap provides a certain buffer space for pressure fluctuations and prevents mechanical contact between the perforated cover plate 240 and the pressure detection end face 231 when it is deformed by heat or vibrates. The distance of the buffer gap can be set according to the actual working conditions.

[0042] In some embodiments, the sensor unit 230 is fixedly installed in the inner cavity 220 of the sleeve 210 along the axial direction of the sleeve 210, ensuring uniform force distribution at all points on the pressure detection end face 231 and improving measurement accuracy. The sensor unit 230 can be fixed by various methods such as bonding, snap-fitting, or threaded connection, which can be selected according to the installation space and accuracy requirements.

[0043] In some embodiments, the sensor unit 230 may be a capacitive thin-film sensor, which offers high detection accuracy and good stability under vacuum conditions; or it may be a piezoresistive vacuum sensor, which offers fast response and a compact structure. The choice between these two sensor types can be made flexibly based on the pressure range and accuracy requirements of the actual process.

[0044] In one embodiment, combined Figures 3 to 4As shown, a pressure gauge can be independently manufactured and applied to the pressure measurement device of the aforementioned semiconductor process chamber. The pressure gauge includes a sleeve 210 and a sensor unit 230 disposed in the inner cavity 220 of the sleeve 210. The inner cavity 220 includes a first cavity 221 and a second cavity 222. The end of the first cavity 221 on the side of the measured medium is covered by a perforated cover plate 240 to achieve pressure transmission and plasma protection. The sensor unit 230 includes a detection component 232 and a circuit board 233. The detection component 232 is located in the first cavity 221 and directly contacts the measured gas to collect pressure signals; the circuit board 233 is located in the second cavity 222 and completes signal processing and output. The first cavity 221 and the second cavity 222 are vacuum sealed to prevent the measured medium from diffusing to the circuit side. The second cavity 222 is connected to the outside. The circuit board 233 can be located in the atmospheric environment to protect the stable operation of the circuit and avoid arc discharge and particulate matter contamination caused by the circuit board 233 being located in a vacuum environment.

[0045] In some embodiments, the detection component 232 includes an elastic diaphragm that responds to pressure changes with elastic deformation, converting the pressure signal into a detectable electrical signal. The elastic diaphragm may be made of metal, ceramic, or silicon-based materials to suit different measurement ranges and environmental requirements.

[0046] The detection component 232 includes an elastic diaphragm, such as a metal diaphragm, which divides the interior of the detection component 232 into a reference pressure chamber and a measurement chamber. Pressure is detected by measuring the deformation of the elastic diaphragm under pressure, i.e., the change in capacitance. The circuit board 233 integrates a signal processing circuit for amplifying, filtering, and converting the raw electrical signal output by the detection component 232.

[0047] In some embodiments, such as Figure 3 As shown, a partition 250 is provided between the first chamber 221 and the second chamber 222. The partition 250 has a through hole, through which the detection component 232 passes. Its pressure detection end is located in the first chamber 221, and its wiring end is located in the second chamber 222. The detection component 232 is airtightly connected to the partition 250 to ensure the sealing performance between the two chambers. The partition structure can make full use of the axial space of the sleeve, reduce the overall radial dimension of the pressure gauge, and adapt to small-size installation scenarios.

[0048] The detection component 232 and the partition plate 250 are connected in an airtight manner by means of glass sintering, brazing, or sealant, ensuring that the first chamber 221 and the second chamber 222 are vacuum-sealed and isolated. This dual-chamber sealing structure completely isolates the detection component 232, which is in direct contact with process gases, from the circuit board 233, which is sensitive to cleanliness and corrosion. This prevents process gases or reaction byproducts from entering the second chamber 222 and contaminating the circuit board 233, thereby improving the reliability and service life of the pressure gauge 200.

[0049] In some embodiments, such as Figure 4As shown, the inner diameter of the first cavity 221 is smaller than the inner diameter of the second cavity 222, and an annular boss 223 is formed at the junction of the first cavity 221 and the second cavity 222. The sensor unit 230 also includes a sealing plate 234, which is disposed between the detection component 232 and the circuit board 233. The outer periphery of the sealing plate 234 is airtightly attached to the platform of the annular boss 223 to divide the inner cavity 220 into a first cavity 221 and a second cavity 222 that are vacuum sealed to each other. This allows the detection component 232 to be in the vacuum environment of the process chamber of the first cavity 221, while the circuit board 233 is in the atmospheric environment of the second cavity 222, thereby improving the reliability of the equipment.

[0050] The sealing plate 234 can be airtightly fixed by bolting, welding, or gluing. It has lead holes for signal transmission components to pass through, and these holes are airtightly sealed using glass sintering or sealant. Compared to the partition design, this stepped-hole sealing plate structure is simpler to manufacture and easier to assemble.

[0051] In some embodiments, the sensor unit 230 further includes a signal transmission element, which may be a flexible circuit board, a wire, or an electrical connector. The signal transmission element passes through the partition 250 or a sealed structure to transmit the electrical signal of the detection component 232 to the circuit board 233, and an airtight seal is formed between the signal transmission element and the partition 250.

[0052] During actual operation, when the internal pressure of the process chamber 100 changes rapidly, the pressure wave is directly transmitted to the inner cavity 220 through the perforated cover plate 240 and acts on the detection surface of the sensor unit 230. Since the sensor unit 230 is embedded inside the cavity wall 110, the pressure transmission path is short and the transmission volume is small, allowing pressure changes to be quickly transmitted to the sensor's sensitive surface. The measured value follows the actual pressure changes within the chamber in real time, shortening the waiting time for pressure stabilization determination and increasing the effective process window duration. When the plasma generated during the process diffuses to the perforated cover plate 240, the active particles collide and become inactive within the detection holes, preventing them from reaching the sensor surface. This provides reliable protection without affecting pressure transmission, ensuring long-term stable operation of the sensor.

[0053] In one embodiment, combined Figure 5 As shown, the pressure measuring device described above can be applied to a semiconductor processing equipment 300. The semiconductor processing equipment 300 includes a process chamber 100, a gas supply system 301, a plasma generation system 302, a vacuum system 303, and the aforementioned pressure measuring device. A base 304 is disposed inside the process chamber 100, which is used to support the substrate W to be processed. The substrate W can be a silicon wafer, a compound semiconductor wafer, or other semiconductor workpiece.

[0054] The gas supply system 301 is connected to the interior of the process chamber 100 and is used to introduce process gases such as etching precursors, reactive gases, and carrier gases into the chamber. The plasma generation system 302 is used to excite the process gases into plasma to achieve etching and other process reactions. The vacuum system 303 is connected to the exhaust end of the process chamber 100 and is used to evacuate the chamber, working in conjunction with the gas supply system 301 to regulate the process pressure inside the chamber. The pressure gauge 200 of the pressure measuring device is embedded in the chamber wall 110 of the process chamber 100, and collects the gas pressure signal inside the chamber in real time and outputs it to the control system of the equipment.

[0055] The pressure gauge 200 of the pressure measuring device is mounted on the cavity wall 110 of the process chamber 100 to detect the gas pressure inside the process chamber 100 in real time. Due to the aforementioned embedded mounting structure and the plasma quenching design of the perforated cover plate 240, the pressure gauge 200 can respond quickly and accurately to pressure changes inside the process chamber 100, while being protected from plasma damage.

[0056] In some embodiments, the semiconductor processing apparatus 300 is an atomic layer etching apparatus. The control system of the atomic layer etching apparatus is configured to: determine the process window status based on the real-time detection signal output by the pressure measuring device; when the pressure in the chamber reaches a set pressure value and meets the stability condition, determine that an effective process window has been entered, and then start the corresponding etching process step. Because the measurement delay of the pressure measuring device is extremely low, the control system can determine that the process window is open as soon as the actual pressure in the chamber stabilizes, without the need for additional pre-set lag waiting time, thereby reducing the total time of a single cycle and improving the processing efficiency of batch substrates.

[0057] In atomic layer etching (ALT) processes, the equipment is configured to determine the process window status based on detection signals from a pressure measuring device. Specifically, in each process cycle, the equipment first switches the pressure within the process chamber 100 to a target value, for example, from high pressure to low pressure, or vice versa, and then waits for the pressure to stabilize before performing etching or surface treatment steps. Because the pressure measuring device of this invention has extremely low measurement latency, the control system can promptly determine whether the actual pressure within the process chamber 100 has reached a stable state based on a comparison between the real-time pressure reading of the pressure gauge 200 and a preset pressure threshold. This accurately determines the start time of the process window and immediately initiates the etching process step once the pressure reaches the set value. This significantly reduces the time lost in each cycle due to waiting for the pressure reading to stabilize, increasing the equipment's throughput. Simultaneously, precise pressure control helps ensure that each wafer and each cycle is processed under the same ideal pressure conditions, improving process consistency and product yield.

[0058] Optionally, the pumping system 303 may include a dry pump, a molecular pump, and a matching vacuum valve assembly to achieve a wide range of vacuum pressure regulation; the gas supply system 301 may be configured with a multi-channel mass flow controller to achieve precise proportioning and rapid on / off switching of various gases. Those skilled in the art can configure the specific structure of each system according to actual process requirements, and no unique limitation is made here.

[0059] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A pressure measuring device for a semiconductor process chamber, comprising a pressure gauge, the pressure gauge including a sensor unit, characterized in that, The pressure gauge also includes a sleeve; the sleeve is used to pass through the mounting hole in the wall of the process chamber and is sealed and fixed to the chamber wall. The sensor unit is housed in the inner cavity of the sleeve, and in the installed state, the sensor unit is at least partially located inside the outer surface of the cavity wall; The sleeve is provided with a perforated cover plate at one end facing the interior of the process chamber. The perforated cover plate covers the chamber-side end opening of the interior cavity. A through detection hole is provided on the perforated cover plate, and the interior cavity communicates with the interior of the process chamber through the detection hole. The perforated cover plate is configured to quench plasma active particles passing through it in order to protect the sensor unit.

2. The pressure measuring device as described in claim 1, characterized in that, A connecting flange is provided at one end of the sleeve located outside the cavity wall. A sealing element is sandwiched between the connecting flange and the outer surface of the cavity wall, and a vacuum seal is formed between the sleeve and the cavity wall through the connecting flange.

3. The pressure measuring device as described in claim 1, characterized in that, The detection holes are provided in multiple ways, and the length-to-diameter ratio of each detection hole is not less than 2:

1.

4. The pressure measuring device as described in claim 1, characterized in that, The perforated cover and sleeve are made of conductive or semiconductor material, and the detection hole diameter is less than 5mm.

5. The pressure measuring device as described in claim 1, characterized in that, The pressure detection end face of the sensor unit is positioned facing the perforated cover plate, and a buffer gap is left between the pressure detection end face and the perforated cover plate.

6. The pressure measuring device as described in claim 1, characterized in that, The sensor unit is fixedly installed in the inner cavity of the sleeve along the axial direction of the sleeve.

7. The pressure measuring device as described in claim 1, characterized in that, The sensor unit includes a capacitive thin-film sensor or a piezoresistive vacuum sensor.

8. A pressure gauge for a semiconductor process chamber, comprising a sleeve and a sensor unit disposed within the inner cavity of the sleeve, characterized in that, The inner cavity includes a first cavity and a second cavity. The end of the first cavity on the side of the measured medium is covered by a perforated cover plate. The perforated cover plate has a through detection hole and is configured to quench plasma passing through it. The sensor unit includes a detection component and a circuit board. The detection component is located in the first cavity, the circuit board is located in the second cavity, and the first cavity and the second cavity are vacuum-sealed.

9. The pressure gauge as described in claim 8, characterized in that, The detection component includes an elastic thin film.

10. The pressure gauge as described in claim 8, characterized in that, A partition is provided between the first cavity and the second cavity. The partition has a through hole, and the detection component is inserted through the through hole. Its pressure detection end is located in the first cavity, and its wiring end is located in the second cavity. The detection component is airtightly connected to the partition.

11. The pressure gauge as claimed in claim 8, characterized in that, The inner diameter of the first cavity is smaller than that of the second cavity, and an annular boss is formed at the junction of the first cavity and the second cavity; the sensor unit also includes a sealing plate, which is disposed between the detection component and the circuit board, and the outer periphery of the sealing plate is airtightly overlapped on the platform of the annular boss to divide the inner cavity into a first cavity and a second cavity that are vacuum sealed to each other.

12. A semiconductor processing apparatus comprising a process chamber, a gas supply system, a plasma generation system and a gas exhaust system, characterized in that, It also includes the pressure measuring device as described in any one of claims 1 to 7; The pressure measuring device is installed in the process chamber to detect the gas pressure inside the process chamber; the process chamber is provided with a base to support the substrate.

13. The semiconductor processing apparatus as claimed in claim 12, characterized in that, The semiconductor processing equipment is an atomic layer etching equipment; the atomic layer etching equipment is configured to determine the process window status based on the detection signal of the pressure measuring device, and to start the etching process step after the pressure reaches the set value.

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