A water vapor gas sensor for use in a low pressure environment
CN122545602APending Publication Date: 2026-08-11BEIJING INFORMATION SCI & TECH UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-30
- Publication Date
- 2026-08-11
AI Technical Summary
Technical Problem
[0004]为了解决现有的水汽气体传感器，因常压环境下大量存在的氧气、氮气等背景气体会与目标水分子竞争吸附位点，稀释和屏蔽了有效反应，导致传感器灵敏度受限的问题，本申请提供一种用于低压环境下的水汽气体传感器
Benefits of technology
[0032]1、由于本申请采用将传感单元设置于低压腔室内，减少了背景气体对敏感材料表面吸附位点的占据，使H2O分子能够直接吸附并引起电阻变化，采用SnO2/ZnO复合薄膜覆盖电极的叉指区域与间隙，且该薄膜由SnO2层与ZnO层依次沉积形成异质结结构，增强了电子转移效率，提升了电阻响应信号的强度，因此，获得了在低压环境下对H2O气体灵敏度高的检测效果，解决了现有的水汽气体传感器，因常压环境下大量存在的氧气、氮气等背景气体会与目标水分子竞争吸附位点，稀释和屏蔽了有效反应，导致传感器灵敏度受限的问题。
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Abstract
This application relates to the field of gas sensing technology, specifically disclosing a water vapor gas sensor for low-pressure environments. The sensor includes a low-pressure chamber and a sensing unit, which is fixedly disposed inside the low-pressure chamber. The sensing unit comprises an insulating substrate, electrodes formed on the surface of the insulating substrate, and a SnO2 / ZnO composite film covering the electrode surface. The SnO2 / ZnO composite film is a heterojunction structure formed by sequentially depositing SnO2 and ZnO layers on the electrode surface using magnetron sputtering. This application utilizes the placement of the sensing unit within the low-pressure chamber, allowing H2O molecules to be directly adsorbed and causing a change in resistance. The use of the SnO2 / ZnO composite film to cover the interdigitated regions and gaps of the electrodes enhances electron transfer efficiency and increases the intensity of the resistance response signal. Therefore, it achieves high sensitivity for H2O gas detection under low-pressure environments.
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