A heating temperature control and anti-sparking system for semiconductor high temperature test

CN122545982APending Publication Date: 2026-08-11INP SCI INSTR (SHANGHAI) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-05-08
Publication Date
2026-08-11

AI Technical Summary

Technical Problem

现有技术中,常见的温度控制方式主要包括加热台传导加热及热风对流加热等方式;其中,加热台通过热传导方式对晶圆进行升温,具有结构简单的优点,但存在温度响应速度较慢及温度分布均匀性受限的问题;热风对流加热虽可在一定程度上改善温度均匀性,但其气流组织及温度控制精度仍难以满足高精度测试需求;

Benefits of technology

1.本申请通过气体加热模块对输入气体进行加热,搭配温度传感器与控制单元构成闭环控制回路,解决了现有加热方式温度响应慢、均匀性差、精度不足的问题,能够匹配半导体高精度测试的温度需求;同时,加热后的气体通过定向输送方式作用于测试区域,进一步提升了温度分布的均匀性与温度响应速度;

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Abstract

This application provides a heating temperature control and anti-sparking system for high-temperature semiconductor testing, including a heating temperature control component and a heating gas pipe assembly connected thereto. The heating temperature control component heats the gas medium and delivers it to the heating gas pipe assembly, which in turn delivers a temperature-controlled inert gas medium between the probe card and the device under test. This application heats the input gas using a gas heating module, forming a closed-loop control circuit with a temperature sensor and control unit. This solves the problems of slow temperature response, poor uniformity, and insufficient accuracy in existing heating methods, thus meeting the temperature requirements of high-precision semiconductor testing. Simultaneously, the heated gas is directed to the test area, further improving the uniformity of temperature distribution and the speed of temperature response.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor testing equipment technology, and more specifically, to a heating temperature control and anti-sparking system for high-temperature semiconductor testing. Background Technology

[0002] After semiconductor devices are manufactured, they typically undergo multiple testing stages, including wafer-level testing, wafer-level aging testing, screening of known good products, and final testing, to verify the electrical performance and reliability of the devices. During the above testing process, in order to simulate the operating state of the devices under actual working conditions or accelerate the exposure of potential failure mechanisms, it is usually necessary to perform electrical performance testing on the devices under test under certain temperature conditions. In the existing technology, common temperature control methods mainly include heating stage conduction heating and hot air convection heating. Among them, heating stage heats the wafer by heat conduction, which has the advantage of simple structure, but has the problems of slow temperature response speed and limited temperature distribution uniformity. Although hot air convection heating can improve temperature uniformity to a certain extent, its airflow organization and temperature control accuracy are still difficult to meet the requirements of high-precision testing. Furthermore, during high-temperature testing, repeated contact between the probe card and the wafer pads can easily generate tiny metal wear particles. These particles accumulate in the test area and may adhere to the probe or pad surface, leading to unstable contact resistance and affecting the repeatability and accuracy of the test results. At the same time, under high-temperature and high-voltage testing conditions, the breakdown voltage of the gas medium in the test area decreases, and transient discharges or even arcing phenomena are likely to occur between the probe and the device under test. Such discharge behavior not only interferes with the test signal but may also damage the probe card structure and the device under test. Furthermore, existing testing systems mostly employ air or simple gas environments, lacking precise control over the atmosphere of the testing area. This makes it difficult to simultaneously address multiple requirements such as oxidation prevention, particle suppression, and discharge suppression during high-temperature testing. Therefore, existing technologies still have shortcomings in terms of temperature control accuracy, testing environment cleanliness, and electrical safety. Based on this, it is necessary to provide a technical solution that can achieve precise temperature control, testing area atmosphere adjustment, and arc discharge suppression during semiconductor testing, in order to improve the stability, reliability, and consistency of the testing process. Summary of the Invention

[0003] The present invention provides a heating temperature control and anti-sparking system for high-temperature semiconductor testing, including a heating temperature control component and a heating gas pipe component connected thereto. The heating temperature control component is used to heat the gas medium and deliver it to the heating gas pipe component. The heating gas pipe component is used to deliver the inert gas temperature-controlled gas medium between the probe card and the test piece. The heating and temperature control assembly includes a gas heating module and a control unit. The gas heating module is used to heat the introduced gas medium. The heating gas pipe assembly includes a heating gas pipe body that is connected to the output end of the gas heating module. The output end of the heating gas pipe body is provided with a heating gas pipe outlet interface, which is used to transport the heated gas medium between the probe card and the test piece.

[0004] As a preferred technical solution of this application, the gas heating module is connected to a first air inlet, which is used to connect to a device storing gas medium through a pipeline and to provide the required gas medium to the gas heating module. A solenoid valve is also provided between the first air inlet and the gas heating module.

[0005] As a preferred technical solution of this application, the gas heating module is connected to a gas flow regulation module, the gas flow regulation module is connected to a first gas outlet, the heating gas pipe body is connected to a heating gas pipe inlet, and the heating gas pipe inlet and the first gas outlet are connected by a pipeline to realize the gas path connection between the heating gas pipe assembly and the heating gas pipe body. A pressure sensor is also connected between the heating gas pipe inlet and the first gas outlet to detect the gas output pressure.

[0006] As a preferred technical solution of this application, the gas flow regulation module is used to regulate the gas flow rate output by the gas heating module, and the gas flow regulation module includes a flow control unit and a flow detection unit.

[0007] As a preferred technical solution of this application, the control unit is connected to a controller, the controller is connected to a gas heating module, and the controller is also connected to a gas flow regulation module. The control unit is also connected to a communication interface module.

[0008] As a preferred technical solution of this application, the control unit is also connected to a reserved temperature sensor interface and a first temperature sensor interface. A temperature sensor body is provided on the heating gas pipe body, and the temperature sensor body is configured with a second temperature sensor interface. The second temperature sensor interface is connected to the first temperature sensor interface.

[0009] As a preferred technical solution of this application, the control unit is also connected to a power switch and a power control module, and the power control module is connected to a power cable.

[0010] As a preferred technical solution of this application, the control unit is further connected to a first control signal interface, and an outlet control valve is connected between the heating pipe body and the heating pipe outlet interface. The outlet control valve is equipped with a second control signal interface, and the second control signal interface is connected to the first control signal interface.

[0011] As a preferred technical solution of this application, the heating and temperature control component further includes a second protective shell, and the gas heating module and the control unit are both disposed inside the second protective shell.

[0012] As a preferred technical solution of this application, the heating gas pipe assembly further includes a first protective shell, and the main body of the heating gas pipe is located inside the first protective shell.

[0013] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This application heats the input gas using a gas heating module, and forms a closed-loop control circuit with a temperature sensor and a control unit, which solves the problems of slow temperature response, poor uniformity, and insufficient accuracy of existing heating methods, and can meet the temperature requirements of high-precision semiconductor testing; at the same time, the heated gas is delivered to the test area through a directional delivery method, which further improves the uniformity of temperature distribution and temperature response speed. 2. This application continuously supplies a gaseous medium between the probe card and the device under test, which can create a low-oxygen atmosphere in the local space. At the same time, the gas flow is used to adjust the local electric field distribution, reduce the degree of electric field concentration, reduce the breakdown probability of the gaseous medium under high temperature and high voltage test conditions, suppress the occurrence of transient discharge and arcing, reduce test signal interference, probe card and device under test damage, and improve the electrical safety of the test process. 3. On the one hand, the continuous supply of inert gas can effectively reduce the oxygen content in the test area, reduce the oxidation reaction of the device under test and the probe, and protect the device performance; on the other hand, the directional airflow can flush the probe contact area, remove metal wear particles in time, reduce particle accumulation, reduce the problem of unstable contact resistance, and improve electrical contact stability. Attached Figure Description

[0014] Figure 1 A schematic diagram of a heating temperature control and anti-sparking system for high-temperature semiconductor testing provided in this application; Figure 2 A schematic diagram of the heating gas pipe outlet interface provided in this application; Figure 3 This is a schematic diagram of the structure of the heating pipe body provided in this application; Figure 4 A top view of the main body of the heating pipe provided in this application; Figure 5 A block diagram of a heating temperature control and anti-sparking system for high-temperature semiconductor testing provided in this application.

[0015] The image shows: 1. Power cable; 2. First air inlet; 3. First air outlet; 4. Communication interface module; 5. Reserved temperature sensor interface; 6. Power switch; 7. First control signal interface; 8. First temperature sensor interface; 9. Touch screen; 10. Second temperature sensor interface; 11. Heating pipe air inlet; 12. Second control signal interface; 13. Heating pipe air outlet; 14. Heating pipe body; 15. First protective shell; 16. Second protective shell; 17. Temperature sensor body; 18. Air outlet control valve. Detailed Implementation

[0016] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0017] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the present invention can be combined with each other.

[0018] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0019] For an example, please refer to... Figures 1-5 A heating temperature control and anti-sparking system for high-temperature semiconductor testing includes a heating temperature control component and a heating gas pipe component connected thereto. The heating temperature control component is used to heat the gas medium and deliver it to the heating gas pipe component. The heating gas pipe component is used to deliver the inert gas temperature-controlled gas medium between the probe card and the test piece. The heating and temperature control assembly includes a gas heating module and a control unit. The gas heating module is used to heat the introduced gas medium. The heating gas pipe assembly includes a heating gas pipe body 14 connected to the output end of the gas heating module. The output end of the heating gas pipe body 14 is provided with a heating gas pipe outlet 13, which is used to transport the heated gas medium between the probe card and the test piece. The heating gas pipe outlet 13 is connected to a spray assembly through a flexible conduit. The spray assembly can be a universal bamboo tube with an adjustment function, which can adjust the spray direction of the heated gas medium according to the actual situation. The gas spray direction can extend vertically and point towards the test area to achieve directional airflow coverage of the test contact area, so as to take into account both temperature transfer efficiency and particle removal capability. The flexible conduit is made of high-temperature resistant insulating material with a temperature resistance range of not less than 200℃, preferably not less than 250℃. The heated gas medium ejected in this application can form a high-temperature and high-pressure environment to ensure the testing environment. By continuously supplying heated gas medium to the testing area, a local inert gas environment is formed between the probe card and the test piece, i.e., a controlled gas environment is provided. While maintaining the test temperature conditions, the gas environment reduces the oxygen content and adjusts the gas medium characteristics, thereby suppressing arc discharge and interface oxidation under high-temperature and high-voltage conditions. The heated gas medium also continuously flushes the probe contact area to reduce the impact of particle accumulation on the stability of electrical contact. The anti-arcing measures are implemented by suppressing arcs, suppressing transient discharges, and preventing arcing between the probe and the test piece. The gas heating module can use a pipe heater, a finned heater, an electric heating wire, or a ceramic heating element. The gas heating module is connected to a first air inlet 2, which is used to connect to the equipment storing the gas medium through a pipeline and to provide the gas medium required for the gas heating module. The first air inlet 2 is suitable for gas input pressure in the range of 0-7 bar. The gas medium is an inert gas or a low-humidity gas, preferably nitrogen or dry air. A solenoid valve is also provided between the first air inlet 2 and the gas heating module. When an abnormal temperature value is detected, which exceeds the set temperature by 30-50 degrees, the operation of the gas heating module is disconnected and the solenoid valve is closed, so that the gas medium is stopped from being delivered. The gas heating module is connected to a gas flow regulation module, which is connected to a first gas outlet 3. The heating gas pipe body 14 is connected to a heating gas pipe inlet 11. The heating gas pipe inlet 11 and the first gas outlet 3 are connected by a pipeline to realize the gas path connection between the heating gas pipe assembly and the heating gas pipe body 14. A pressure sensor is also connected between the heating gas pipe inlet 11 and the first gas outlet 3 to detect the gas output pressure.

[0020] The gas flow regulation module is used to regulate the gas flow rate output by the gas heating module. The gas flow regulation module includes a flow control unit and a flow detection unit. The flow control unit is a mass flow controller or a proportional control valve, which enables the system to regulate the gas flow rate within the range of 0–200 L / min. The flow detection unit is a flow sensor. The control unit dynamically adjusts the gas flow rate according to the set parameters or temperature feedback signal to achieve coordinated optimization of temperature control and atmosphere control. The control unit is connected to a controller, which is connected to the gas heating module and also to the gas flow regulation module. The control unit is connected to a communication interface module 4, which is used to transmit and read system operating status and parameter data. The communication interface module 4 is a local area network communication interface and is electrically connected to the control unit. It is used to transmit system operating data to external devices or a host computer system. The system operating data includes at least one of the following: temperature parameters, gas flow parameters, heating power parameters, and equipment operating status information.

[0021] The control unit is also connected to a reserved temperature sensor interface 5 and a first temperature sensor interface 8. A temperature sensor body 17 is provided on the heating gas pipe body 14. The temperature sensor body 17 is equipped with a second temperature sensor interface 10. The second temperature sensor interface 10 and the first temperature sensor interface 8 are connected by a line. The reserved temperature sensor interface 5 is a reserved spare interface, and the first temperature sensor interface 8 is a commonly used interface. The first temperature sensor interface 8 and the second temperature sensor interface 10 work together to transmit the temperature data detected by the temperature sensor body 17 to the control unit, which facilitates temperature protection and calibration. The control unit is also connected to a power switch 6 and a power control module. The power control module is connected to a power cable 1, which is connected to a power source to provide the necessary electrical energy for the overall operation. The power control module includes overcurrent protection, overtemperature protection, or short circuit protection units. The power switch 6 is a mechanical switch or an electronic switch, such as a relay or a solid-state relay.

[0022] The control unit is also connected to a first control signal interface 7. An outlet control valve 18 is connected between the heating gas pipe body 14 and the heating gas pipe outlet interface 13. The outlet control valve 18 is equipped with a second control signal interface 12, and the second control signal interface 12 is connected to the first control signal interface 7 through a line. This allows the outlet control valve 18 and the control unit to establish communication through the first control signal interface 7, the second control signal interface 12, and the line. This enables the control unit to control the on / off state of the outlet control valve 18, facilitating the control of the output and stop of the gas medium according to the test procedure.

[0023] The control unit is also connected to a touch screen 9, which serves as the system's control interface. The control unit adopts a proportional-integral-derivative PID control strategy. The preferred temperature control accuracy of this application is ±1℃ or a higher accuracy range.

[0024] The heating and temperature control assembly also includes a second protective shell 16. The power control module, gas heating module, gas flow regulation module, and control unit are all located inside the second protective shell 16 and are protected by the second protective shell 16. The power cable 1, the first air inlet 2, the first air outlet 3, the communication interface module 4, the reserved temperature sensor interface 5, the power switch 6, the first control signal interface 7, the first temperature sensor interface 8, and the touch screen 9 are all located on the second protective shell 16 and outside the second protective shell 16 for operation purposes.

[0025] The heating pipe assembly also includes a first protective shell 15. The heating pipe body 14, the temperature sensor body 17, and the outlet control valve 18 are all located inside the first protective shell 15. The second temperature sensor interface 10, the heating pipe inlet interface 11, and the second control signal interface 12 are located at one end of the first protective shell 15 and extend to the outside of the first protective shell 15. The heating pipe outlet interface 13 is located at the other end of the first protective shell 15 and extends to the outside of the first protective shell 15.

[0026] The temperature sensor body 17 is equipped with at least two channels, located near the outlet port 13 of the heating gas pipe and inside the heating gas pipe body 14, respectively, for detecting the temperature inside the heating gas pipe body 14 and the outlet temperature.

[0027] The heating temperature control and anti-sparking system for high-temperature semiconductor testing provided by this invention is used as follows: The gas medium is delivered to the gas heating module through the first inlet port 2 and heated by the gas heating module. The heated gas is then delivered to the first outlet port 3. During the delivery process, the gas flow rate is regulated by the gas flow rate regulation module. The first outlet port 3 delivers the gas to the heating pipe body 14 through the pipeline and the heating pipe inlet port 11. Then, it is delivered to the target area through the outlet control valve 18, the heating pipe outlet port 13, and the injection assembly. The temperature data detected by the temperature sensor body 17 is transmitted to the control unit through the second temperature sensor interface 10 and the first temperature sensor interface 8, so that the control unit can control the heating temperature of the gas heating module through the controller based on the temperature data.

[0028] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0029] Obviously, the embodiments described above are merely some embodiments of the present invention, not all embodiments. The accompanying drawings show preferred embodiments of the present invention, but do not limit the patent scope of the present invention. The present invention can be implemented in many different forms; rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the patent protection scope of this invention.

Claims

1. A heating temperature control and anti-sparking system for high-temperature semiconductor testing, characterized in that, It includes a heating and temperature control component and a heating gas pipe assembly connected thereto. The heating and temperature control component is used to heat the gas medium and deliver it to the heating gas pipe assembly. The heating gas pipe assembly is used to deliver the inert gas temperature-controlled gas medium between the probe card and the test piece. The heating and temperature control assembly includes a gas heating module and a control unit. The gas heating module is used to heat the introduced gas medium. The heating gas pipe assembly includes a heating gas pipe body (14) connected to the output end of the gas heating module. The output end of the heating gas pipe body (14) is provided with a heating gas pipe outlet (13). The heating gas pipe outlet (13) is used to transport the heated gas medium between the probe card and the test piece.

2. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The gas heating module is connected to a first air inlet (2), which is used to connect to a device storing gas medium through a pipeline and to provide the required gas medium to the gas heating module. A solenoid valve is also provided between the first air inlet (2) and the gas heating module.

3. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The gas heating module is connected to a gas flow regulation module, which is connected to a first gas outlet (3). The heating gas pipe body (14) is connected to a heating gas pipe inlet (11). The heating gas pipe inlet (11) and the first gas outlet (3) are connected by a pipeline to realize the gas path connection between the heating gas pipe assembly and the heating gas pipe body (14). A pressure sensor is also connected between the heating gas pipe inlet (11) and the first gas outlet (3) to detect the gas output pressure.

4. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 3, characterized in that, The gas flow regulation module is used to regulate the gas flow rate output by the gas heating module. The gas flow regulation module includes a flow control unit and a flow detection unit.

5. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 4, characterized in that, The control unit is connected to a controller, which is connected to a gas heating module and also to a gas flow regulation module. The control unit is connected to a communication interface module (4).

6. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The control unit is also connected to a reserved temperature sensor interface (5) and a first temperature sensor interface (8). A temperature sensor body (17) is provided on the heating pipe body (14). The temperature sensor body (17) is equipped with a second temperature sensor interface (10). The second temperature sensor interface (10) is connected to the first temperature sensor interface (8).

7. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The control unit is also connected to a power switch (6) and a power control module, and the power control module is connected to a power cable (1).

8. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The control unit is also connected to a first control signal interface (7). An outlet control valve (18) is connected between the heating pipe body (14) and the heating pipe outlet interface (13). The outlet control valve (18) is equipped with a second control signal interface (12), and the second control signal interface (12) is connected to the first control signal interface (7).

9. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The heating and temperature control assembly also includes a second protective shell (16), and the gas heating module and the control unit are both located inside the second protective shell (16).

10. The heating temperature control and anti-sparking system for high-temperature semiconductor testing according to claim 1, characterized in that, The heating pipe assembly also includes a first protective shell (15), and the heating pipe body (14) is located inside the first protective shell (15).