Display device

Abstract

This application discloses a display device, relating to the field of display technology. The display device includes a first substrate and a second substrate disposed opposite to each other. The first substrate has a display area and a non-display area surrounding the display area. The display area has a plurality of spaced-apart pixel areas, with a non-pixel area formed between each pair of adjacent pixel areas. The display device also includes a switching semiconductor layer disposed on the side of the first substrate facing the second substrate and located in the non-pixel area, a heat-absorbing semiconductor layer disposed on the side of the switching semiconductor layer facing away from the first substrate in the non-pixel area, and a heat-dissipating semiconductor layer located in the non-display area and connected to the heat-absorbing semiconductor layer. The switching semiconductor layer is an insulating layer when its temperature is below a critical temperature or critical light intensity value; and a conductive layer when its temperature is not below the critical temperature or critical light intensity value. The switching semiconductor layer, the heat-absorbing semiconductor layer, and the heat-dissipating semiconductor layer are connected in series and form a closed electrical circuit with a power supply. This application improves the problem of display devices easily failing under strong sunlight.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display device. Background Technology

[0002] When a vehicle is in a strong sunlight environment, sunlight will be focused by the windshield and enter the vehicle's head-up display in reverse along the light path, thus converging on the surface of the display screen to form a high-energy-density light spot. This will cause the local temperature of the liquid crystal layer to rise sharply, leading to liquid crystal failure or even permanent damage to the screen. Summary of the Invention

[0003] The main objective of this application is to propose a display device that aims to improve the problem of vehicle head-up display devices being prone to failure under strong sunlight.

[0004] To achieve the above objectives, the display device proposed in this application includes a first substrate and a second substrate disposed opposite to each other. The first substrate has a display area and a non-display area surrounding the display area. The display area includes a plurality of pixel areas disposed at intervals, and a non-pixel area is formed between each pair of adjacent pixel areas. The display device further includes: A switching semiconductor layer is disposed on the side of the first substrate facing the second substrate and located in the non-pixel area; the switching semiconductor layer is an insulating layer when the temperature is below a critical temperature or a critical light intensity value, and a conductive layer when the temperature is not below a critical temperature or a critical light intensity value, and can be electrically connected to a power source. A heat-absorbing semiconductor layer is disposed on the side of the switching semiconductor layer opposite to the first substrate and located in the non-pixel region; and A heat-dissipating semiconductor layer is located in the non-display area and is connected to the heat-absorbing semiconductor layer; the switching semiconductor layer, the heat-absorbing semiconductor layer, and the heat-dissipating semiconductor layer are connected in series and can form a closed electrical circuit with the power supply.

[0005] In one embodiment, the display device further includes a first metal reflective layer, which is disposed on the side of the switching semiconductor layer facing the first substrate and located in the non-pixel area; the first metal reflective layer is connected in series between the switching semiconductor layer and the power supply, and the first metal reflective layer is electrically connected to the switching semiconductor layer and the switching semiconductor layer.

[0006] In one embodiment, the display device further includes a phase change heat dissipation layer disposed on the side of the switching semiconductor layer facing the first substrate and stacked with the first metal reflective layer, wherein the phase change temperature of the phase change heat dissipation layer is lower than the critical temperature of the switching semiconductor layer.

[0007] In one embodiment, the phase change heat dissipation layer is disposed on the side of the first metal reflective layer away from the first substrate, and the first metal reflective layer and the switching semiconductor layer are electrically connected through a conductive element.

[0008] In one embodiment, the side of the first metal reflective layer facing the first substrate has a rough surface.

[0009] In one embodiment, the heat-absorbing semiconductor layer further extends to the non-display area, and the heat-dissipating semiconductor layer is disposed on the side of the heat-absorbing semiconductor layer facing the first substrate.

[0010] In one embodiment, the display device further includes a second metal layer disposed in the non-display area and between the heat dissipation semiconductor layer and the first substrate.

[0011] In one embodiment, the switching semiconductor layer includes a plurality of independent sub-switching semiconductors, which are arranged in parallel.

[0012] In one embodiment, the display device further includes a light-shielding layer disposed on the side of the switching semiconductor layer facing the first substrate.

[0013] In one embodiment, the display device further includes an energy storage battery disposed on the second substrate; the heat-absorbing semiconductor and the heat-dissipating semiconductor are respectively connected to the positive and negative terminals of the energy storage battery, and the energy storage battery is also electrically connected to the switching semiconductor layer; And / or, a liquid crystal layer is further provided between the first substrate and the second substrate, and the liquid crystal layer is disposed corresponding to the display area.

[0014] In this technical solution, when the display area is exposed to strong sunlight, the switching semiconductor layer located under this area senses the high temperature or strong light and changes from an insulating state to a conductive state. Since the heat-absorbing semiconductor layer is located on the side of the switching semiconductor layer away from the first substrate, and the switching semiconductor layer, heat-absorbing semiconductor layer, and heat-dissipating semiconductor layer are connected in series, forming a closed circuit with the power supply, the switching semiconductor layer provides the basis for conduction between the power supply and the heat-absorbing semiconductor layer. Current flows through the thermoelectric circuit formed by the heat-absorbing and heat-dissipating semiconductor layers. In the conductive state, the heat-absorbing semiconductor layer absorbs heat and transfers it to the heat-dissipating semiconductor layer for release, thereby achieving effective automatic heat dissipation of the light spot area of ​​the display device. Once the local temperature drops below the critical temperature or critical light intensity value, the switching semiconductor layer returns to the insulating state, the circuit automatically disconnects, and the heat dissipation function stops. Therefore, this device achieves automatic sensing, automatic initiation of heat dissipation, and automatic recovery from localized overheating caused by strong sunlight, reducing the risk of display device failure under strong sunlight conditions. The display device of this application does not involve complex external control circuits, has a high degree of structural integration, and a fast response speed. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0016] Figure 1 A cross-sectional view of a first embodiment of the display device provided in this application; Figure 2 A cross-sectional view of a second embodiment of the display device provided in this application; Figure 3 A cross-sectional view of Embodiment 3 of the display device provided in this application; Figure 4 A bottom view of the first substrate of the display device provided in this application, on which only a first metal reflective layer and a second metal layer are provided; Figure 5 A bottom view of the first substrate of the display device provided in this application, which has a phase change heat dissipation layer and a second metal layer. Figure 6 A bottom view of the first substrate of the display device provided in this application, which has a phase change heat dissipation layer, a switching semiconductor layer, a heat dissipation semiconductor layer and a second metal layer. Figure 7 A bottom view of the first substrate of the display device provided in this application, which has a heat-absorbing semiconductor layer, a heat-dissipating semiconductor layer and a second metal layer.

[0017] Explanation of icon numbers: 100. First substrate; 110. Color resist layer; 200. Second substrate; 300. Switching semiconductor layer; 310. Sub-switching semiconductor; 400. Heat-absorbing semiconductor layer; 500. Heat dissipation semiconductor layer; 600. First metallic reflective layer; 700, Phase Change Heat Dissipation Layer; 800, Second metal layer; 900, Liquid Crystal Layer.

[0018] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0020] It should be noted that if the embodiments of this application involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0021] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution that simultaneously satisfies A and B. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0022] When a vehicle is in a strong sunlight environment, sunlight will be focused by the windshield and enter the vehicle's head-up display in reverse along the light path, thus converging on the surface of the display screen to form a high-energy-density light spot. This will cause the local temperature of the liquid crystal layer to rise sharply, leading to liquid crystal failure or even permanent damage to the screen.

[0023] Example 1: In order to improve the problem that vehicle head-up display devices are prone to failure in strong sunlight, this application proposes a display device, which can be a direct-lit display device or a backlit display device.

[0024] like Figure 1 As shown, in one embodiment of this application, the display device includes a first substrate 100 and a second substrate 200 disposed opposite to each other; the first substrate 100 has a display area and a non-display area surrounding the display area, the display area including a plurality of pixel areas disposed at intervals, and a non-pixel area is formed between each two adjacent pixel areas; the display device also includes a switching semiconductor layer 300, a heat-absorbing semiconductor layer 400 and a heat-dissipating semiconductor layer 500; the switching semiconductor layer 300 is disposed on the side of the first substrate 100 facing the second substrate 200 and is located in the non-pixel area; the switching semiconductor layer 300 is an insulating layer when it is below a critical temperature or critical light intensity value, and a conductive layer when it is not below a critical temperature or critical light intensity value; the heat-absorbing semiconductor layer 400 is disposed on the side of the switching semiconductor layer 300 away from the first substrate 100 and is located in the non-pixel area; the heat-dissipating semiconductor layer 500 is located in the non-display area and is connected to the heat-absorbing semiconductor layer 400; the switching semiconductor layer 300, the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500 are connected in series in sequence and can form a closed circuit with the power supply.

[0025] The first substrate 100 can be a glass substrate, a ceramic substrate, etc., and the second substrate 200 can be a thin-film transistor array glass substrate or other driving substrate. The first substrate 100 is disposed on the light-emitting side of the second substrate 200. The first substrate 100 and the second substrate 200 are positioned opposite each other, meaning that the first substrate 100 and the second substrate 200 are spaced apart, and a larger surface area of ​​the first substrate 100 faces a larger surface area of ​​the second substrate 200. The first substrate 100 has a display area and a non-display area surrounding the display area. The display area is the area capable of displaying an image, and the non-display area is the peripheral area of ​​the display screen. The display area also includes multiple pixel areas spaced apart. Each pixel area is a region that actually emits light. A color resist layer 110 can be disposed in each pixel area. For example, the color resist layer 110 can include at least one of red, green, and blue color resists. Spacing is provided between pixel areas to reduce the risk of color crosstalk; therefore, a non-pixel area is formed between every two adjacent pixel areas.

[0026] The display device also includes a switching semiconductor layer 300, which can be made of a semiconductor material with significant thermosensitive properties, such as vanadium dioxide doped with molybdenum or titanium, or other materials with insulator-metal phase transition properties. Taking vanadium dioxide doped with molybdenum as an example, its phase transition temperature is approximately 80°C. At normal operating temperatures (e.g., below 80°C), it exhibits insulating properties with high resistivity. When the local temperature rises to the phase transition temperature (e.g., 80°C or above) due to strong sunlight focusing, it rapidly transforms into a metallic phase, its resistivity drops sharply, and it becomes a conductive layer. Alternatively, the switching semiconductor layer 300 can be made of a semiconductor material with significant photosensitivity properties, such as porphyrin-sensitized titanium dioxide composite material, whose resistance changes with light intensity. When light shines on a photoresistor, the resistance of the semiconductor material decreases; in a dark environment, free charges decrease, and the resistance increases. By placing the switching semiconductor layer 300 on the side of the first substrate 100 facing the second substrate 200 and located in a non-pixel area, the impact on the display's optical performance can be effectively avoided. The switching semiconductor layer 300 can be electrically connected to a power source. Specifically, this can mean that the switching semiconductor layer 300 is directly connected to the power source via a wire, or via other conductive metal components. When the switching semiconductor layer 300 is electrically connected to the power source, it provides a conductive foundation for the heat-absorbing semiconductor layer 400 when the temperature or light intensity is not lower than a critical value, allowing the heat-absorbing semiconductor layer 400 to conduct electricity.

[0027] The heat-absorbing semiconductor layer 400 can be made of materials with high heat absorption coefficient and good thermoelectric conversion efficiency, such as bismuth telluride, cobalt antimonide, or their doped compounds. Structurally, it can be patterned to correspond to the location of heat sources (e.g., backlight or focused spot) in the display area, in a grid or strip distribution, to maximize the absorption of locally generated heat. One end of the heat-absorbing semiconductor layer 400 is located on the side of the switching semiconductor layer 300 away from the first substrate 100. This allows the heat-absorbing semiconductor layer 400 to be close to or in direct contact with potential hot spot areas, and also allows it to directly contact the switching semiconductor layer 300. This enables the switching semiconductor layer 300 to directly conduct electricity with the heat-absorbing semiconductor layer 400 when it senses strong light or high temperature.

[0028] The heat dissipation semiconductor layer 500 can also be made of thermoelectric materials such as bismuth telluride, but its doping type (N-type or P-type) is matched with that of the heat-absorbing semiconductor layer 400. That is, one of the heat-absorbing semiconductor layer 400 and the heat dissipation semiconductor layer 500 is a P-type semiconductor, and the other is an N-type semiconductor, to form a complete thermoelectric cooling circuit. For example, if the heat-absorbing semiconductor layer 400 uses a P-type thermoelectric material and the heat dissipation semiconductor layer 500 uses an N-type thermoelectric material, and the two are connected in series through a conductive contact, then when energized, heat is absorbed through the heat-absorbing semiconductor layer 400 and dissipated through the heat dissipation semiconductor layer 500. Structurally, the heat dissipation semiconductor layer 500 is arranged in the non-display area of ​​the first substrate 100. This area is usually far from the focal point of the light path and has a relatively low ambient temperature, serving as the cold end for thermoelectric cooling. The heat-absorbing semiconductor layer 400 and the heat dissipation semiconductor layer 500 are electrically and thermally connected through conductive leads or direct contact.

[0029] The switching semiconductor layer 300, the heat-absorbing semiconductor layer 400, and the heat-dissipating semiconductor layer 500 are connected in series and can form a closed loop with the power supply. When the temperature or light intensity value of the switching semiconductor layer 300 is not less than the critical temperature or critical light intensity value of the switching semiconductor layer 300, the switching semiconductor layer 300 becomes a conductive layer and is electrically connected to one end of the positive and negative terminals of the power supply. The heat-dissipating semiconductor layer 500 is electrically connected to the other end of the positive and negative terminals of the power supply. Thus, after the power supply powers the switching semiconductor layer 300, the switching semiconductor layer 300 provides current to the heat-absorbing semiconductor layer 400. In the conductive state, the heat-absorbing semiconductor layer 400 absorbs heat and transfers the heat to the heat-dissipating semiconductor layer 500 for release, thereby achieving the effect of guiding the heat of the display area to the non-display area and effectively dissipating heat in the non-display area.

[0030] In this application's technical solution, when the display area is exposed to strong sunlight, the switching semiconductor layer 300 located in the area of ​​strong sunlight senses the high temperature or strong light and changes from an insulating state to a conductive state. Since the heat-absorbing semiconductor layer 400 is located on the side of the switching semiconductor layer 300 away from the first substrate 100, and the switching semiconductor layer 300, heat-absorbing semiconductor layer 400, and heat-dissipating semiconductor layer 500 are connected in series, forming a closed circuit with the power supply, the switching semiconductor layer 300 provides the basis for conduction between the power supply and the heat-absorbing semiconductor layer 400. Current flows through the thermoelectric circuit formed by the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500. In the conductive state, the heat-absorbing semiconductor layer 400 absorbs heat and transfers it to the heat-dissipating semiconductor layer 500 for release, thereby achieving effective automatic heat dissipation of the light spot area of ​​the display device. Once the local temperature drops below the critical temperature or critical light intensity value, the switching semiconductor layer 300 returns to the insulating state, the circuit automatically disconnects, and the heat dissipation function stops. Therefore, this device automatically senses, initiates heat dissipation, and recovers from localized overheating caused by strong sunlight, reducing the risk of display device failure under strong sunlight conditions. The display device of this application does not involve complex external control circuits, has high structural integration, and fast response speed.

[0031] Example 2: Please refer to the reference. Figure 2 and Figure 4 This embodiment is an optimization based on Embodiment 1. The display device in this embodiment also includes a first metal reflective layer 600, which is disposed on the side of the switching semiconductor layer 300 facing the first substrate 100 and located in the non-pixel area; the first metal reflective layer 600 is connected in series between the switching semiconductor layer 300 and the power supply, and the first metal reflective layer 600 and the switching semiconductor layer 300 are electrically connected.

[0032] The first metallic reflective layer 600 can be made of a highly reflective metallic material, such as silver, aluminum, or copper. Its surface can be planarized to create a mirror-like reflection effect, or it can be roughened to achieve a diffuse reflection effect.

[0033] By placing the first metal reflective layer 600 on the side of the switching semiconductor layer 300 facing the first substrate 100, the first metal reflective layer 600 can serve as a conductive layer, providing a stable electrical connection for the switching semiconductor layer 300. This ensures that when the switching semiconductor layer 300 becomes conductive, current can be injected into the entire thermal management circuit uniformly and with low resistance. It also reduces the need for a large number of wires when the switching semiconductor layer 300 has multiple independent sub-switching semiconductors and is connected to the power supply. On the other hand, it can also serve as a reflective layer, thereby reflecting ambient light back, which greatly reduces the internal temperature of the display device, thereby reducing the risk of display device failure and reducing power consumption.

[0034] Example 3: Please refer to the reference. Figure 3 and Figure 5 This embodiment is a further improvement on Embodiment 2. The display device in this embodiment also includes a phase change heat dissipation layer 700, which is disposed on the side of the switching semiconductor layer 300 facing the first substrate 100 and is stacked with the first metal reflective layer 600; the phase change temperature of the phase change heat dissipation layer 700 is lower than the critical temperature of the switching semiconductor layer 300.

[0035] The phase change heat dissipation layer 700 refers to a material capable of absorbing the temperature of the surrounding environment and undergoing a phase change at a critical temperature. Specifically, the phase change heat dissipation layer 700 is composed of materials with high latent heat of phase change, such as paraffin-based materials, hydrated salts, or low-melting-point alloys (such as gallium-indium alloys). These materials are effective conductors of heat in the solid state, and when the temperature reaches their melting point, they absorb a large amount of heat and melt, while their own temperature remains constant.

[0036] The phase change heat dissipation layer 700 can be disposed on the side of the first metal reflective layer 600 facing the first substrate 100, or on the side of the first metal reflective layer 600 away from the first substrate 100. Specifically, when the phase change heat dissipation layer 700 is disposed on the side of the first metal reflective layer 600 facing the first substrate 100, the first metal reflective layer 600 can directly contact the switching semiconductor layer 300, thereby eliminating the need for conductive components between the first metal reflective layer 600 and the switching semiconductor layer 300. When the phase change heat dissipation layer 700 is disposed on the side of the first metal reflective layer 600 away from the first substrate 100, the first metal reflective layer 600 can reflect most of the light back in advance, thereby reducing the temperature of the phase change heat dissipation layer 700 and thus reducing energy consumption.

[0037] By placing the phase change heat dissipation layer 700 on the side of the switching semiconductor layer 300 facing the first substrate 100 and stacking it with the first metal reflective layer 600, the phase change heat dissipation layer 700 and the first metal reflective layer 600 can cool down the high-temperature area in advance, thereby allowing the switching semiconductor layer 300 to remain in an insulating state for a long time, thus reducing energy consumption. Furthermore, by setting the phase change temperature of the phase change heat dissipation layer 700 to be lower than the critical temperature of the switching semiconductor layer 300, the switching semiconductor layer 300 can absorb heat from the surrounding environment through the phase change heat dissipation layer 700 before it changes to a conductive state and causes the heat-absorbing semiconductor layer 400 to absorb heat, thus achieving a good cooling effect on the surrounding environment.

[0038] In one embodiment, the phase change heat dissipation layer 700 is disposed on the side of the first metal reflective layer 600 away from the first substrate 100, and the first metal reflective layer 600 and the switching semiconductor layer 300 are electrically connected through a conductive element.

[0039] Conductive components can be structures such as metal pillars or metal bumps.

[0040] By sandwiching the phase change heat dissipation layer 700 between the first metal reflective layer 600 and the switching semiconductor layer 300, the phase change heat dissipation layer 700 can rapidly absorb and store the sudden increase in heat during short-term, high-intensity thermal shocks, slowing down the rate of temperature rise. This provides valuable time for the switching semiconductor layer 300 to respond and for the thermoelectric cooling circuit to start, thereby reducing energy consumption. Simultaneously, this arrangement effectively prevents sudden high temperatures that could damage the liquid crystal layer 900. After the thermal shock subsides, the stored heat is slowly released through the thermoelectric cooling circuit, and the phase change material re-solidifies, returning to its initial state, thus enhancing the display device's ability to withstand sudden, extreme thermal shocks.

[0041] Example 4: This embodiment optimizes the first metal reflective layer 600. In this embodiment, the side of the first metal reflective layer 600 facing the first substrate 100 is a rough surface.

[0042] Specifically, the lower surface of the first metal reflective layer 600 can be roughened by adjusting the etching, sandblasting, or deposition process parameters on the surface of the first metal reflective layer 600 or the first substrate 100.

[0043] By setting the side of the first metal reflective layer 600 facing the first substrate 100 as a rough surface, the ambient light incident on the side of the first substrate 100 can be effectively diffused. On the one hand, this can achieve the effect of reflecting more light and reduce the situation of excessively high temperature in local areas caused by strong light; on the other hand, it makes the reflected light more uniform and softer, improving the visibility of the display device and user comfort under strong ambient light.

[0044] Example 5: Please refer to the reference. Figure 1 and Figure 7 This embodiment is a further optimization based on the scheme of Embodiment 1. In this embodiment, the heat-absorbing semiconductor layer 400 extends to the non-display area, and the heat-dissipating semiconductor layer 500 is disposed on the side of the heat-absorbing semiconductor layer 400 facing the first substrate 100.

[0045] This configuration makes the heat-absorbing semiconductor layer 400 a continuous layer spanning the display area and the non-display area, allowing heat to be conducted horizontally within the layer and improving the uniformity of heat distribution. On the other hand, it also makes the contact area between the heat-dissipating semiconductor layer 500 and the heat-absorbing semiconductor layer 400 larger, thereby improving heat dissipation efficiency.

[0046] Example 6: Please refer to the reference. Figures 1 to 7 The display device also includes a second metal layer 800, which is disposed in the non-display area and between the heat dissipation semiconductor layer 500 and the first substrate 100.

[0047] The second metal layer 800 can be made of a metal with high thermal conductivity, such as copper or aluminum. When the display device is provided with both the first metal reflective layer 600 and the second metal layer 800 of this embodiment, the second metal layer 800 can be disposed in the same layer as the first metal reflective layer 600. That is, during the manufacturing process, the first metal reflective layer 600 and the second metal layer 800 can be disposed in the display area and the non-display area of ​​the first substrate 100, respectively.

[0048] By placing the second metal layer 800 in the non-display area and between the heat dissipation semiconductor layer 500 and the first substrate 100, the second metal layer 800 serves as a heat dissipation enhancement layer. It can quickly diffuse the heat released by the heat dissipation semiconductor layer 500 laterally and transfer it to the surrounding environment or the metal casing of the display device more efficiently through its increased surface area, thereby significantly improving the final heat dissipation capacity of the entire heat dissipation module and preventing heat from accumulating in the non-display area.

[0049] Example 7: Please refer to the reference. Figure 1 , Figure 2 , Figure 3 as well as Figure 6In this embodiment, the switching semiconductor layer 300 is further optimized. In this embodiment, the switching semiconductor layer 300 includes multiple independent sub-switching semiconductors 310, which are arranged in parallel.

[0050] In this embodiment, the switching semiconductor layer 300 is not a single, large thin film, but is divided into multiple independent, electrically isolated small blocks, each of which is a sub-switching semiconductor 310. Each sub-switching semiconductor 310 corresponds to a specific sub-pixel region or a group of sub-pixel regions. One end of all these small blocks is connected to a power line or in parallel through the first metal reflective layer 600, and the other end is connected to the heat-absorbing semiconductor layer 400.

[0051] Furthermore, the heat-absorbing semiconductor layer 400 can also be configured as multiple independent small sub-heat-absorbing semiconductors, each sub-heat-absorbing semiconductor being connected to a sub-switching semiconductor 310, and each sub-heat-absorbing semiconductor being connected to the heat-dissipating semiconductor layer 500.

[0052] By connecting multiple sub-switching semiconductors 310 in parallel, when only a small area of ​​the entire display area forms a hot spot due to sunlight, only the corresponding sub-switching semiconductor 310 located directly below the hot spot will change from an insulating state to a conductive state. This activates only the heat-absorbing semiconductor layer 400 corresponding to that local area for heat dissipation, while the corresponding sub-switching semiconductors 310 in other unheated areas remain insulated and the circuit is not conductive. This reduces energy waste and achieves precise, on-demand heat dissipation, greatly improving energy efficiency.

[0053] Example 8: In this embodiment, the display device further includes a light-shielding layer disposed on the side of the switching semiconductor layer 300 facing the first substrate 100.

[0054] The light-shielding layer can be made of a black matrix material, such as black photoresist, or a metal oxide with light-absorbing properties, such as chromium oxide.

[0055] Since the material of the switching semiconductor layer 300 is essentially a semiconductor, it may respond to light and generate photocurrent, causing it to erroneously enter a low-resistivity state before reaching a preset temperature. By placing a light-shielding layer on the side of the switching semiconductor layer 300 facing the first substrate 100, the introduction of the light-shielding layer can effectively block sunlight, ambient light, or leakage light from the internal light guide plate incident from the first substrate 100 side from directly irradiating the switching semiconductor layer 300, eliminating interference from photoconductive conductivity, and ensuring that the conduction of the switching semiconductor layer 300 is determined solely by temperature, greatly improving the reliability and stability of the thermal management system.

[0056] Example 9: In this embodiment, the display device also includes an energy storage battery (not shown), which is disposed on the second substrate 200. The heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500 are respectively connected to the positive and negative electrodes of the energy storage battery. The energy storage battery can also be electrically connected to the switching semiconductor layer 300.

[0057] Under illumination, a temperature difference exists between the display area and the non-display area. When the switching semiconductor layer 300 is not conducting, the circuit formed by the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500 can act as a thermoelectric generator. Utilizing the inherent temperature difference between the higher-temperature display area and the lower-temperature non-display area, voltage is generated through the Seebeck effect to charge the energy storage battery for unforeseen needs. For example, when the energy storage battery is fully charged, under conditions of high light intensity and external power outage, the energy storage battery can conversely supply power to the switching semiconductor layer 300, thereby achieving the effect of heat dissipation through the energization of the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500. Therefore, this embodiment achieves a perfect combination of waste heat recovery and active cooling, significantly reducing dependence on external power and reducing energy consumption while maintaining good heat dissipation.

[0058] Based on this, the display device may also include a rectifier with two input terminals and two output terminals. The two input terminals are connected to the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500, respectively, and the two output terminals are connected to the positive and negative terminals of the energy storage battery, respectively. With this configuration, the current generated jointly by the heat-absorbing semiconductor layer 400 and the heat-dissipating semiconductor layer 500 can be rectified by the rectifier before being used to charge the energy storage battery.

[0059] In the display device of this application, a liquid crystal layer 900 may be provided between the first substrate 100 and the second substrate 200, and the liquid crystal layer 900 is disposed corresponding to the display area. The liquid crystal layer 900 may be cholesteric liquid crystal, nematic liquid crystal, or other electro-optic materials suitable for display, thereby achieving the effect of controlling the light emission direction and intensity.

[0060] The above description is merely an exemplary embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made based on the technical concept of this application and the contents of the specification and drawings of this application, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this application.

Claims

1. A display device comprising a first substrate and a second substrate disposed opposite to each other, the first substrate having a display area and a non-display area surrounding the display area, the display area comprising a plurality of spaced-apart pixel areas, with a non-pixel area formed between each adjacent pair of pixel areas; characterized in that, The display device further includes: A switching semiconductor layer is disposed on the side of the first substrate facing the second substrate and located in the non-pixel area; the switching semiconductor layer is an insulating layer when the temperature is below a critical temperature or a critical light intensity value, and a conductive layer when the temperature is not below a critical temperature or a critical light intensity value. A heat-absorbing semiconductor layer is disposed on the side of the switching semiconductor layer opposite to the first substrate and located in the non-pixel region; and A heat-dissipating semiconductor layer is located in the non-display area and is connected to the heat-absorbing semiconductor layer; the switching semiconductor layer, the heat-absorbing semiconductor layer, and the heat-dissipating semiconductor layer are connected in series and can form a closed electrical circuit with the power supply.

2. The display device of claim 1, wherein, The display device further includes a first metal reflective layer, which is disposed on the side of the switching semiconductor layer facing the first substrate and located in the non-pixel area; the first metal reflective layer is connected in series between the switching semiconductor layer and the power supply, and the first metal reflective layer is electrically connected to the switching semiconductor layer and the switching semiconductor layer.

3. The display device of claim 2, wherein, The display device further includes a phase change heat dissipation layer, which is disposed on the side of the switching semiconductor layer facing the first substrate and is stacked with the first metal reflective layer. The phase change temperature of the phase change heat dissipation layer is lower than the critical temperature of the switching semiconductor layer.

4. The display device of claim 3, wherein, The phase change heat dissipation layer is disposed on the side of the first metal reflective layer away from the first substrate, and the first metal reflective layer and the switching semiconductor layer are electrically connected through a conductive component.

5. The display device of claim 2, wherein, The side of the first metal reflective layer facing the first substrate has a rough surface.

6. The display device according to any one of claims 1 to 5, wherein The heat-absorbing semiconductor layer extends into the non-display area, and the heat-dissipating semiconductor layer is disposed on the side of the heat-absorbing semiconductor layer facing the first substrate.

7. The display device according to any one of claims 1 to 5, wherein The display device further includes a second metal layer, which is disposed in the non-display area and between the heat dissipation semiconductor layer and the first substrate.

8. The display device according to any one of claims 1 to 5, characterized in that, The switching semiconductor layer includes multiple independent sub-switching semiconductors, which are arranged in parallel.

9. The display device according to any one of claims 1 to 5, wherein The display device further includes a light-shielding layer disposed on the side of the switching semiconductor layer facing the first substrate.

10. The display device according to any one of claims 1 to 5, wherein The display device further includes an energy storage battery disposed on the second substrate; the heat-absorbing semiconductor and the heat-dissipating semiconductor are respectively connected to the positive and negative terminals of the energy storage battery, and the energy storage battery is also electrically connected to the switching semiconductor layer. And / or, a liquid crystal layer is further provided between the first substrate and the second substrate, and the liquid crystal layer is disposed corresponding to the display area.

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