A method, apparatus, and storage medium for manufacturing a large-aperture metasurface lens.

Abstract

This application provides a method, apparatus, and storage medium for manufacturing a large-aperture metasurface lens. The method includes: obtaining the maximum field of view size of a single exposure in a lithography machine; selecting a photomask size based on the short side of the maximum field of view size; determining the number of photolithography stitching operations for the metasurface lens with a target aperture based on the photomask size; obtaining a structure to be lithographically etched, including a substrate and a hard mask layer; using multiple photomasks of the same size to sequentially etch the hard mask layer of each stitched region in different stitched areas of the structure to be lithographically etched according to the number of stitching operations, to obtain a patterned hard mask layer for all stitched regions; subsequently, using the patterned hard mask layer for all stitched regions as a mask, etching the substrate to obtain the metasurface lens with the target aperture. Based on this, the embodiments of this application achieve high-efficiency manufacturing of large-aperture metasurface lenses by performing multiple photolithography stitching operations on the structure to be lithographically etched based on the photomask size.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and in particular to a method, apparatus and storage medium for manufacturing a large-aperture metasurface lens. Background Technology

[0002] Traditional optical lenses control wavefronts by controlling the phase and amplitude changes accumulated as light propagates within a material. Therefore, these lenses are limited by the material's refractive index and the macroscopic structure of the element. To meet diverse design requirements for optical wavefronts, techniques utilizing metasurface lenses to adjust the phase, amplitude, and polarization of light have been developed. A metasurface is a microstructure array in planar space composed of numerous units densely arranged at subwavelength intervals. Unlike traditional optical lenses, the phase of a metasurface unit is almost independent of the accumulated path of light in the transmission medium, allowing the propagation length of light to be reduced to tens of micrometers or even lower. Furthermore, since the phase of light is related to the shape, size, position, and orientation of the metasurface units, fundamental properties of light, such as phase, amplitude, and polarization, can be controlled by altering these parameters, thus enabling the free design of the wavefront.

[0003] Currently, deep ultraviolet (DUV) lithography is mainly used to manufacture metasurface lenses. However, the field of view of DUV lithography is relatively small. Due to the limited field of view, DUV lithography cannot be used to manufacture large-aperture metasurface lenses. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a method, apparatus and storage medium for manufacturing large-aperture metasurface lenses, so as to achieve high-efficiency manufacturing of large-aperture metasurface lenses.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] This application provides a method for manufacturing a large-aperture metasurface lens, the method comprising:

[0007] Obtain the maximum field of view of a single exposure of the lithography machine, and select the size of the lithography plate based on the shorter side of the maximum field of view;

[0008] The number of stitching operations for the metasurface lens with the target aperture is determined based on the size of the photomask;

[0009] Obtain a structure to be photolithographically etched, the structure comprising a substrate and a hard mask layer;

[0010] Using multiple photomasks of the same size, the hard mask layer of each splicing region in different splicing regions of the structure to be photolithographically etched sequentially according to the number of splicing operations, to obtain a patterned hard mask layer for all splicing regions;

[0011] The substrate is etched using a patterned hard mask layer covering all the spliced ​​areas to obtain a metasurface lens with the target aperture.

[0012] Optionally, the photomask size includes the photomask side length, and the target aperture includes the target diameter;

[0013] The number of stitching operations for the metasurface lens, whose target aperture is determined based on the photomask size, includes:

[0014] The square of the ratio of the target diameter to the side length of the photomask is determined as the number of times the metasurface lens with the target aperture is stitched together for photolithography.

[0015] Optionally, the number of splicing operations is n, where n is greater than 1;

[0016] The process of using multiple photomasks of the same size to sequentially etch the hard mask layer of each spliced ​​region in different spliced ​​areas of the structure to be photolithographically patterned according to the number of splicing operations, to obtain a patterned hard mask layer, includes:

[0017] Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to the specified number of splicing operations, to obtain a patterned hard mask layer, wherein the size of the n splicing regions is the target aperture.

[0018] Optionally, the step of etching the hard mask layer of each of the n splicing regions of the structure to be photolithographically modeled using n photolithographic plates of the same size according to the number of splicing operations includes:

[0019] Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to a preset splicing path and the specified number of splicing steps. The preset splicing path is the order in which the n splicing regions are etched according to the number of splicing steps.

[0020] Optionally, the preset splicing path is in the shape of the letter S.

[0021] Optionally, the step of using multiple photomasks of the same size to sequentially etch the hard mask layer of each splicing region in different splicing areas of the structure to be photolithographically patterned according to the number of splicing operations, to obtain a patterned hard mask layer for all splicing regions, includes:

[0022] For the i-th stitch in n stitching operations, where n ≥ i ≥ 1, a photoresist layer is formed on the hard mask layer of at least the i-th stitching region; the photoresist layer of the i-th stitching region is exposed using the i-th photomask of the specified size to obtain a patterned photoresist layer of the i-th stitching region; the hard mask layer of the i-th stitching region is etched using the patterned photoresist layer of the i-th stitching region as a mask to obtain a patterned hard mask layer of the i-th stitching region; the photoresist layer is then removed.

[0023] Repeat the above steps n times until a patterned hard mask layer is obtained for all stitched areas.

[0024] Optionally, the substrate is a silicon substrate.

[0025] This application provides an apparatus for manufacturing large-aperture metasurface lenses, comprising:

[0026] The first acquisition unit is used to acquire the maximum field of view size of a single exposure of the lithography machine, and select the size of the lithography plate according to the short side of the maximum field of view size.

[0027] The determining unit is used to determine the number of times the metasurface lens with the target aperture is stitched together for photolithography based on the size of the photolithography plate.

[0028] The second acquisition unit is used to acquire the structure to be lithographically etched, the structure to be lithographically etched including a substrate and a hard mask layer;

[0029] An etching unit is used to etch the hard mask layer of each splicing region in different splicing areas of the structure to be photolithographically modeled using multiple photomasks of the same size as the photomask, according to the number of splicing operations, to obtain a patterned hard mask layer for all splicing regions; and to etch the substrate using the patterned hard mask layer for all splicing regions as a mask to obtain a metasurface lens with the target aperture.

[0030] This application provides a manufacturing apparatus for large-aperture metasurface lenses, the apparatus comprising: a processor and a memory;

[0031] The memory is used to store instructions;

[0032] The processor is configured to execute the instructions in the memory and perform the method as described above.

[0033] This application provides a computer-readable medium including instructions that, when executed on a computer, cause the computer to perform the methods described above.

[0034] This application provides a method for manufacturing a large-aperture metasurface lens. The method includes: multiple stitching photolithography steps are required during the manufacturing of the large-aperture metasurface lens. The area of ​​each stitching photolithography step is limited by the shorter side of the maximum field of view. Therefore, the maximum field of view of a single exposure of the photolithography machine is obtained, and the photomask size is selected based on the shorter side of the maximum field of view; that is, the photomask size for each stitching photolithography step is determined based on the shorter side of the maximum field of view. The number of stitching steps for the metasurface lens with the target aperture is determined based on the photomask size. In other words, when determining the photomask size for each stitching photolithography step, the area of ​​each stitching photolithography step is also determined. Based on the target aperture of the metasurface lens and the area of ​​each stitching photolithography step, the manufacturing process for the large-aperture metasurface lens can be determined. The process involves multiple stitching lithography steps during the fabrication of a surface lens. This process involves obtaining a structure to be lithographically patterned, including a substrate and a hard mask layer. Multiple photolithography plates of the same size are used to sequentially etch the hard mask layer of each stitched region within the different stitched areas of the structure to be lithographically patterned, i.e., performing stitching lithography with a specific number of stitching steps. Each stitching lithography step etches different stitched regions of the structure to be lithographically patterned, resulting in a patterned hard mask layer for all stitched regions. Subsequently, the substrate is etched using the patterned hard mask layer as a mask to obtain a metasurface lens with the target aperture. Based on this, the embodiments of this application achieve high-efficiency fabrication of large-aperture metasurface lenses by performing multiple stitching lithography steps on the structure to be lithographically patterned based on the size of the photolithography plate. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 A schematic flowchart of a method for manufacturing a large-aperture metasurface lens according to an embodiment of this application is shown;

[0037] Figure 2 This illustration shows a schematic diagram of the number of photolithographic stitching steps for determining the target aperture of a metasurface lens according to an embodiment of this application;

[0038] Figure 3 This illustration shows a cross-sectional structural diagram of a structure to be photolithographically etched according to an embodiment of this application;

[0039] Figure 4 This illustration shows a schematic diagram of a first splicing region provided in an embodiment of this application;

[0040] Figures 5-8 This illustration shows a cross-sectional view of a structure to be lithographically lithographically lithographically lithographically performed in the first splicing process according to an embodiment of this application.

[0041] Figure 9 This illustration shows a schematic diagram of a second splicing region provided in an embodiment of this application;

[0042] Figures 10-13 This illustration shows a cross-sectional view of a structure to be lithographically lithographically lithographically lithographically performed in the first splicing process according to an embodiment of this application.

[0043] Figure 14 This illustration shows a schematic diagram of a photolithography process performed sequentially according to the number of stitches, as provided in an embodiment of this application.

[0044] Figure 15 This illustration shows a cross-sectional structure diagram of substrate etching according to an embodiment of this application;

[0045] Figure 16 A cross-sectional structural schematic diagram of a metasurface lens provided in an embodiment of this application is shown;

[0046] Figure 17 This illustration shows a schematic diagram of a manufacturing apparatus for a large-aperture metasurface lens provided in an embodiment of this application. Detailed Implementation

[0047] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0048] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0049] This application is described in detail with reference to the schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not according to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0050] To meet the diverse design requirements of optical wavefronts, techniques have been developed to adjust the phase, amplitude, and polarization of light using metasurface lenses. A metasurface is a microstructure array in planar space composed of numerous units densely arranged at subwavelength intervals. Unlike traditional optical lenses, the phase of a metasurface unit is almost independent of the cumulative path traveled by light in the transmission medium, allowing the propagation length of light to be reduced to tens of micrometers or even lower. Furthermore, since the phase of light is related to the shape, size, position, and orientation of the metasurface units, the fundamental properties of light, such as phase, amplitude, and polarization, can be controlled by altering these parameters, thus enabling the free design of the light wavefront.

[0051] Large-aperture metasurface lenses can overcome the limitations of traditional metasurface lenses in practical applications and have great potential.

[0052] Currently, deep ultraviolet (DUV) lithography and electron beam lithography are the main methods used to manufacture metasurface lenses. However, electron beam lithography is inefficient and not suitable for large-scale mass production, while deep ultraviolet lithography has a smaller field of view. Due to the limited field of view, deep ultraviolet lithography cannot be used to manufacture large-aperture metasurface lenses.

[0053] In other words, current large-aperture metasurface lenses suffer from high manufacturing difficulty and low efficiency.

[0054] Based on this, this application provides a method for manufacturing a large-aperture metasurface lens. The method includes: multiple stitching lithography steps are required during the manufacturing of the large-aperture metasurface lens. The area of ​​each stitching lithography step is limited by the shorter side of the maximum field of view. Therefore, the maximum field of view of a single exposure of the lithography machine is obtained, and the size of the photomask is selected based on the shorter side of the maximum field of view; that is, the size of the photomask for each stitching lithography step is determined based on the shorter side of the maximum field of view. The number of stitching steps for the metasurface lens with the target aperture is determined based on the photomask size. In other words, when determining the size of the photomask for each stitching lithography step, the area of ​​each stitching lithography step is also determined. Based on the target aperture of the metasurface lens and the area of ​​each stitching lithography step, the manufacturing process for the large-aperture metasurface lens can be determined. The process involves multiple stitching lithography steps for fabricating a large-aperture metasurface lens. This involves obtaining a structure to be lithographically patterned, including a substrate and a hard mask layer. Multiple photolithography plates of the same size are used to sequentially etch the hard mask layer of each stitched region within the different stitched areas of the structure to be lithographically patterned, i.e., performing stitching lithography with a specific number of stitching steps. Each stitching lithography step etches different stitched regions of the structure to be lithographically patterned, resulting in a patterned hard mask layer for all stitched regions. Subsequently, the substrate is etched using this patterned hard mask layer as a mask to obtain a metasurface lens with the target aperture. Based on this, the embodiments of this application achieve high-efficiency fabrication of large-aperture metasurface lenses by performing multiple stitching lithography steps based on the size of the photolithography plate for the structure to be lithographically patterned.

[0055] To better understand the technical solution and effects of this application, the specific embodiments will be described in detail below with reference to the accompanying drawings.

[0056] refer to Figure 1 The diagram shown is a flowchart illustrating a method for manufacturing a large-aperture metasurface lens according to an embodiment of this application. The method includes the following steps:

[0057] S101: Obtain the maximum field of view of the lithography machine in one exposure, and select the lithography plate size based on the shorter side of the maximum field of view.

[0058] In the embodiments of this application, considering that large-aperture metasurface lenses cannot be formed using a single photolithography process, they can be manufactured using a multi-step photolithography process. The area of ​​each photolithography step is limited by the shorter side of the maximum field of view of the photolithography machine. Therefore, the maximum field of view of a single exposure of the photolithography machine is obtained, and the photomask size is selected based on the shorter side of the maximum field of view; that is, the photomask size for each photolithography step is determined based on the shorter side of the maximum field of view. Photolithography step-by-step refers to one of the multiple photolithography processes in the fabrication of large-aperture metasurface lenses.

[0059] As one possible implementation, large-aperture metasurface lenses are typically circular in shape, so the shape of the photomask exposed in each stitch is square, thus realizing the formation of large-aperture metasurface lenses by multiple stitching of photomasks.

[0060] As an example, see reference Figure 2 As shown, the maximum field of view of a single exposure of the lithography machine is 25mm×32mm. The shape of the large-aperture metasurface lens is circular. Since the lithography plates are spliced ​​multiple times to eventually form a circle, each splicing lithography needs to be square. Thus, the area of ​​each splicing lithography exposure is limited by the short side of the maximum field of view, i.e., 25mm. Therefore, a 25mm×25mm lithography plate can be selected.

[0061] S102, the number of times the metasurface lens with the target aperture is stitched together for photolithography is determined according to the size of the photomask.

[0062] In the embodiments of this application, after determining the size of the photomask based on the short side of the maximum field of view, the number of photolithography stitching operations required to manufacture a metasurface lens with a target aperture can be determined based on the size of the photomask, thereby realizing the manufacture of a metasurface lens with a target aperture using the stitching photolithography of the number of stitching operations.

[0063] As one possible implementation, the large-aperture metasurface lens is circular in shape, and the photolithography plate is square in shape. The photolithography plate dimensions include its side length, and the target aperture includes its diameter. The square of the ratio of the target diameter to the photolithography plate side length is determined as the number of stitching operations required for the metasurface lens with the target aperture.

[0064] As an example, if the size of the photomask is 25mm×25mm, that is, the side length of the photomask is 25mm, and the target diameter of the metasurface lens is 50mm, then the number of stitching times is 4, that is, a metasurface lens with a diameter of 50mm can be achieved by performing 4 stitchings.

[0065] As another example, if the photomask size is 25mm × 25mm (i.e., the side length of the photomask is 25mm), and the target diameter of the metasurface lens is 100mm, then the number of stitching operations is 16. That is, performing 16 stitching operations will ultimately achieve a metasurface lens with a 100mm aperture. (Refer to...) Figure 2 As shown, a metasurface lens with a diameter of 100mm requires 16 photolithography plates. Figure 2 The pattern of the metasurface lens is divided into 16 25mm×25mm photomasks, which can be stitched together to form a complete metasurface lens pattern.

[0066] As another example, if the size of the photomask is 25mm×25mm, that is, the side length of the photomask is 25mm, and the target diameter of the metasurface lens is 125mm, then the number of stitching times is 25, that is, a metasurface lens with a diameter of 125mm can be achieved by performing 25 stitchings.

[0067] As another example, if the size of the photomask is 25mm×25mm, that is, the side length of the photomask is 25mm, and the target diameter of the metasurface lens is 200mm, then the number of stitching times is 64, that is, a metasurface lens with a diameter of 200mm can be achieved by performing 64 stitchings.

[0068] As another example, if the size of the photomask is 25mm×25mm, that is, the side length of the photomask is 25mm, and the target diameter of the metasurface lens is 300mm, then the number of stitching times is 144, that is, a metasurface lens with a diameter of 300mm can be achieved by performing 144 stitchings.

[0069] In other words, to manufacture a metasurface lens with the target aperture, you only need to select a suitable photomask size based on the short side of the maximum field of view of the photolithography machine in one exposure, and determine the number of photolithography stitches to be performed in combination with the target aperture of the metasurface lens.

[0070] S103, Obtain the structure to be lithographically etched, which includes a substrate and a hard mask layer.

[0071] In the embodiments of this application, in order to manufacture a large-aperture metasurface lens, the structure to be etched can be spliced ​​multiple times by photolithography, so that the structure to be etched can be obtained in the subsequent etching process.

[0072] refer to Figure 3 As shown, the structure to be lithographically etched includes a substrate 110 and a hard mask layer 120. The hard mask layer 120 is disposed on one side of the substrate 110.

[0073] Specifically, the substrate material can be a silicon substrate, and the hard mask layer is manufactured using a chemical vapor deposition (CVD) process.

[0074] The process of forming the hard mask layer and the subsequent etching of the photolithographic structure is compatible with the Complementary Metal Oxide Semiconductor (CMOS) process, and is suitable for conventional CMOS production lines, enabling large-scale mass production of large-aperture metasurface lenses.

[0075] S104, using multiple photomasks of the same size as the photomask, the hard mask layer of each splicing region in different splicing regions of the photolithographic structure is etched sequentially according to the number of splicing, to obtain a patterned hard mask layer for all splicing regions.

[0076] In the embodiments of this application, after obtaining the structure to be lithographicated and the number of stitching operations for etching the structure, multiple photomasks of the same size can be used to sequentially etch the hard mask layer of each stitched region in different stitched areas of the structure to be lithographicated according to the number of stitching operations, thereby obtaining a patterned hard mask layer for all stitched regions. In other words, stitching lithography is performed according to the number of stitching operations, with each stitching lithography operation etching different stitched regions of the structure to be lithographicated, thereby obtaining a patterned hard mask layer for all stitched regions, so that the patterned hard mask layer can be used to subsequently etch the substrate to obtain a large-aperture metasurface lens.

[0077] Specifically, if the number of stitching operations is n (where n is greater than 1), then n photomasks of the same size are needed for n stitching lithography operations. These n photomasks are used sequentially, according to the number of stitching operations, to etch the hard mask layer of each of the n stitching regions of the structure to be lithographically modeled, resulting in a patterned hard mask layer. Since the dimensions of the n stitching regions of the structure to be lithographically modeled represent the target aperture, performing n stitching lithography operations allows the fabrication of a patterned hard mask layer with the target aperture. This facilitates subsequent etching of the substrate using the patterned hard mask layer with the target aperture to obtain a metasurface lens with the target aperture.

[0078] As one possible implementation, when etching the hard mask layer of each of the n spliced ​​regions of the photolithographic structure sequentially according to the number of splices, the specific process is as follows:

[0079] For the i-th stitch in n stitching operations, where n≥i≥1, a photoresist layer is formed on the hard mask layer of at least the i-th stitching region. The photoresist layer of the i-th stitching region is exposed using the i-th photomask of the photomask size to obtain a patterned photoresist layer of the i-th stitching region. The hard mask layer of the i-th stitching region is etched using the patterned photoresist layer of the i-th stitching region as a mask to obtain a patterned hard mask layer of the i-th stitching region. The photoresist layer is then removed.

[0080] After repeating the above steps n times, i.e. performing n stitching photolithography steps, a patterned hard mask layer for all stitched areas is finally obtained.

[0081] As an example, when n is 16, for the first of the 16 splicing attempts, determine the first splicing region among the 16 splicing regions, i.e., i is 1, refer to... Figure 4 As shown. Reference Figure 5 As shown, a bottom anti-reflective coating 130 (BARC) and a photoresist layer 140 are formed on the entire hard mask layer 120, with the bottom anti-reflective coating 130 located between the photoresist layer 140 and the hard mask layer 120. (Reference) Figure 6 As shown, the photoresist layer 140 of the first splicing area is exposed using a first photoresist of the same size as the photoresist plate, resulting in a patterned photoresist layer 140 of the first splicing area. (Reference) Figure 7 As shown, the bottom anti-reflective coating 130 and hard mask layer 120 of the first splicing region are etched using the patterned photoresist layer 140 of the first splicing region as a mask, resulting in the patterned hard mask layer 120 of the first splicing region. (Reference) Figure 8 As shown, after obtaining the patterned hard mask layer 120 of the first splicing area, the bottom anti-reflective coating 130 and photoresist layer 140 are removed.

[0082] For the second of the 16 stitching operations, i.e., i = 2, determine the second stitching region among the 16 stitching regions, i.e., i = 2, refer to... Figure 9 As shown, the first and second stitching areas are adjacent. (Reference) Figure 10 As shown, a bottom anti-reflective coating 130 and a photoresist layer 140 are formed on the entire hard mask layer 120, with the bottom anti-reflective coating 130 located between the photoresist layer 140 and the hard mask layer 120. (Reference) Figure 11As shown, a second photoresist layer 140 of the second splicing area is exposed using a second photoresist plate of the same size as the photoresist plate, resulting in a patterned photoresist layer 140 of the second splicing area. (Reference) Figure 12 As shown, the bottom anti-reflective coating 130 and hard mask layer 120 of the second splicing region are etched using the patterned photoresist layer 140 of the second splicing region as a mask, resulting in the patterned hard mask layer 120 of the second splicing region. (Reference) Figure 13 As shown, after obtaining the patterned hard mask layer 120 of the second splicing area, the bottom anti-reflective coating 130 and photoresist layer 140 are removed.

[0083] The 3rd, 4th, ..., 16th stitching photolithography is performed sequentially according to the number of stitching, so as to obtain the patterned hard mask layer 120 of the 3rd stitching region, the patterned hard mask layer 120 of the 4th stitching region, ..., the patterned hard mask layer 120 of the 16th stitching region, so as to obtain the patterned hard mask layer 120 of all stitching regions.

[0084] In the embodiments of this application, when etching the hard mask layers of different splicing regions of the photolithography structure sequentially according to the number of splicing operations, the hard mask layer of each splicing region can be etched according to a preset splicing path. That is, using n photolithography plates of the same size as the photolithography plate, the hard mask layers of each splicing region in the n splicing regions of the photolithography structure are etched sequentially according to the preset splicing path and the number of splicing operations. At this time, the preset splicing path is the order in which the n splicing regions are etched according to the number of splicing operations, that is, the preset splicing path indicates the splicing region to be etched each time, thereby meeting the requirement of high-efficiency manufacturing of large-aperture metasurface lenses.

[0085] As one possible implementation, the pre-defined splicing path is in the shape of the letter S. The letter S-shaped splicing path can achieve low-cost etching, thereby enabling low-cost manufacturing of large-aperture metasurface lenses.

[0086] As an example, see reference Figure 4 , Figure 9 as well as Figure 14 As shown, the etching sequence is displayed from the first stitching area in the lower left corner, the second stitching area adjacent to the first stitching area, to the sixteenth stitching area in the upper right corner, according to the preset stitching path.

[0087] S105, using a patterned hard mask layer across the entire splicing area to etch the substrate, yields a metasurface lens with the target aperture.

[0088] In the embodiments of this application, after obtaining a patterned hard mask layer for all splicing areas, the substrate is etched using the patterned hard mask layer for all splicing areas as a mask to obtain a metasurface lens with the target aperture.

[0089] refer to Figure 15 As shown, the substrate is etched using a patterned hard mask layer 120 covering the entire splicing area to obtain a patterned substrate 110, which is the metasurface lens with the target aperture.

[0090] After etching the substrate to obtain the metasurface lens, the hard mask layer can be removed. (Reference) Figure 16 As shown, the hard mask layer 120 located on the substrate 110 is removed.

[0091] Therefore, this application provides a method for manufacturing a large-aperture metasurface lens. The method includes: multiple stitching photolithography steps are required during the manufacturing of the large-aperture metasurface lens. The area of ​​each stitching photolithography step is limited by the short side of the maximum field of view. Therefore, the maximum field of view of a single exposure of the photolithography machine is obtained, and the photomask size is selected based on the short side of the maximum field of view, i.e., the photomask size for each stitching photolithography step is determined based on the short side of the maximum field of view. The number of stitching steps for the metasurface lens with the target aperture is determined based on the photomask size. That is, when determining the photomask size for each stitching photolithography step, the area of ​​each stitching photolithography step is also determined. Based on the target aperture of the metasurface lens and the area of ​​each stitching photolithography step, the manufacturing process for a large-aperture metasurface lens can be determined. The process involves multiple stitching lithography steps for fabricating a metasurface lens with a target aperture. The process begins by obtaining a structure to be lithographically patterned, including a substrate and a hard mask layer. Multiple photolithography plates of the same size are used to sequentially etch the hard mask layer of each stitched region within the different stitched areas of the structure to be lithographically patterned, according to the number of stitching steps. This is known as stitching lithography, where each stitching step etches different stitched regions of the structure to be lithographically patterned, resulting in a patterned hard mask layer for all stitched regions. The substrate is then etched using this patterned hard mask layer as a mask to obtain the metasurface lens with the target aperture. Based on this, the embodiments of this application achieve highly efficient fabrication of metasurface lenses with arbitrary apertures by performing multiple stitching lithography steps based on the size of the photolithography plate for the structure to be lithographically patterned.

[0092] Based on the manufacturing method of large-aperture metasurface lenses provided in the above embodiments, this application also provides a manufacturing apparatus for large-aperture metasurface lenses, see reference. Figure 17 The diagram shown is a structural schematic of a manufacturing apparatus for a large-aperture metasurface lens according to an embodiment of this application. The manufacturing apparatus 200 for a large-aperture metasurface lens provided in this embodiment includes:

[0093] The first acquisition unit 210 is used to acquire the maximum field of view of a single exposure of the lithography machine and select the size of the lithography plate according to the short side of the maximum field of view.

[0094] The determining unit 220 is used to determine the number of times the metasurface lens with the target aperture is stitched together for photolithography based on the size of the photolithography plate.

[0095] The second acquisition unit 230 is used to acquire the structure to be lithographically etched, the structure to be lithographically etched including a substrate and a hard mask layer;

[0096] Etching unit 240 is used to etch the hard mask layer of each splicing region in different splicing regions of the structure to be photolithographically modeled according to the number of splicing steps using multiple photomasks of the same size as the photomask, so as to obtain a patterned hard mask layer of all splicing regions; and to etch the substrate using the patterned hard mask layer of all splicing regions as a mask to obtain a metasurface lens with the target aperture.

[0097] In some embodiments, the photomask size includes the photomask side length, and the target aperture includes the target diameter;

[0098] Determine unit 220, used for:

[0099] The square of the ratio of the target diameter to the side length of the photomask is determined as the number of times the metasurface lens with the target aperture is stitched together for photolithography.

[0100] In some embodiments, the number of splicing operations is n, where n is greater than 1;

[0101] Etching unit 240 is used for:

[0102] Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to the specified number of splicing operations, to obtain a patterned hard mask layer, wherein the size of the n splicing regions is the target aperture.

[0103] In some embodiments, the etching unit 240 is used for:

[0104] Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to a preset splicing path and the specified number of splicing steps. The preset splicing path is the order in which the n splicing regions are etched according to the number of splicing steps.

[0105] In some embodiments, the preset splicing path is in the shape of the letter S.

[0106] In some embodiments, the etching unit 240 is used for:

[0107] For the i-th stitch in n stitching operations, where n ≥ i ≥ 1, a photoresist layer is formed on the hard mask layer of at least the i-th stitching region; the photoresist layer of the i-th stitching region is exposed using the i-th photomask of the specified size to obtain a patterned photoresist layer of the i-th stitching region; the hard mask layer of the i-th stitching region is etched using the patterned photoresist layer of the i-th stitching region as a mask to obtain a patterned hard mask layer of the i-th stitching region; the photoresist layer is then removed.

[0108] Repeat the above steps n times until a patterned hard mask layer is obtained for all stitched areas.

[0109] In some embodiments, the substrate is a silicon substrate.

[0110] Based on the manufacturing method of a large-aperture metasurface lens provided in the above embodiments, this application also provides a manufacturing apparatus for a large-aperture metasurface lens, the manufacturing apparatus comprising:

[0111] The processor and memory may be present, and the number of processors may be one or more. In some embodiments of this application, the processor and memory may be connected via a bus or other means.

[0112] Memory may include read-only memory and random access memory, and provides instructions and data to the processor. A portion of the memory may also include NVRAM. Memory stores the operating system and operating instructions, executable modules, or data structures, or subsets thereof, or extended sets thereof. The operating instructions may include a variety of operation instructions for implementing various operations. The operating system may include various system programs for implementing various basic business functions and handling hardware-based tasks.

[0113] The processor controls the operation of the terminal device; the processor can also be called the CPU.

[0114] The methods disclosed in the embodiments of this application can be applied to a processor or implemented by a processor. A processor can be an integrated circuit chip with signal processing capabilities. During implementation, each step of the above method can be completed by integrated logic circuits in the processor's hardware or by instructions in software form. The processor can be a general-purpose processor, DSP, ASIC, FPGA, or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. A general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this application can be directly embodied as execution by a hardware decoding processor, or as a combination of hardware and software modules in the decoding processor. The software modules can reside in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. This storage medium is located in memory; the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above method.

[0115] This application also provides a computer-readable medium for storing program code that is used to perform any of the methods in the foregoing embodiments.

[0116] It should be noted that the computer-readable medium described above in this application can be a computer-readable signal medium, a computer-readable storage medium, or any combination thereof. A computer-readable storage medium can be, for example,—but not limited to—an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this application, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. In this application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable program code. Such propagated data signals can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium can be any computer-readable medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium can be transmitted using any suitable medium, including but not limited to: wires, optical fibers, RF (radio frequency), etc., or any suitable combination thereof.

[0117] The aforementioned computer-readable medium may be included in the aforementioned electronic device; or it may exist independently and not assembled into the electronic device.

[0118] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the apparatus embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0119] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A method for manufacturing a large-aperture metasurface lens, characterized in that, The method includes: Obtain the maximum field of view of a single exposure of the lithography machine, and select the size of the lithography plate based on the shorter side of the maximum field of view; The number of stitching operations for the metasurface lens with the target aperture is determined based on the size of the photomask; Obtain a structure to be lithographically etched, the structure comprising a substrate and a hard mask layer; Using multiple photomasks of the same size, the hard mask layer of each splicing region in different splicing regions of the structure to be photolithographically etched sequentially according to the number of splicing operations, to obtain a patterned hard mask layer for all splicing regions; The substrate is etched using a patterned hard mask layer covering all the spliced ​​areas to obtain a metasurface lens with the target aperture.

2. The method according to claim 1, characterized in that, The photomask dimensions include the side length of the photomask, and the target aperture includes the target diameter; The number of stitching operations for the metasurface lens, whose target aperture is determined based on the photomask size, includes: The square of the ratio of the target diameter to the side length of the photomask is determined as the number of times the metasurface lens with the target aperture is stitched together for photolithography.

3. The method according to claim 1, characterized in that, The number of splicing operations is n, where n is greater than 1; The process of using multiple photomasks of the same size to sequentially etch the hard mask layer of each spliced ​​region in different spliced ​​areas of the structure to be photolithographically patterned according to the number of splicing operations, to obtain a patterned hard mask layer, includes: Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to the specified number of splicing operations, to obtain a patterned hard mask layer, wherein the size of the n splicing regions is the target aperture.

4. The method according to claim 3, characterized in that, The step of etching the hard mask layer of each of the n spliced ​​regions of the structure to be photolithographically modeled using n photolithographic plates of the same size according to the number of splicing operations includes: Using n photomasks of the specified size, the hard mask layer of each of the n splicing regions of the structure to be photolithographically etched sequentially according to a preset splicing path and the specified number of splicing steps. The preset splicing path is the order in which the n splicing regions are etched according to the number of splicing steps.

5. The method according to claim 4, characterized in that, The preset splicing path is in the shape of the letter S.

6. The method according to claim 3, characterized in that, The process of using multiple photomasks of the same size to sequentially etch the hard mask layer of each splicing region in different splicing areas of the structure to be photolithographically patterned according to the number of splicing operations, to obtain a patterned hard mask layer for all splicing regions, includes: For the i-th stitch in n stitching operations, where n ≥ i ≥ 1, a photoresist layer is formed on the hard mask layer of at least the i-th stitching region; the photoresist layer of the i-th stitching region is exposed using the i-th photomask of the specified size to obtain a patterned photoresist layer of the i-th stitching region; the hard mask layer of the i-th stitching region is etched using the patterned photoresist layer of the i-th stitching region as a mask to obtain a patterned hard mask layer of the i-th stitching region; the photoresist layer is then removed. Repeat the above steps n times until a patterned hard mask layer is obtained for all stitched areas.

7. The method according to any one of claims 1-6, characterized in that, The substrate is a silicon substrate.

8. A manufacturing apparatus for a large-aperture metasurface lens, characterized in that, include: The first acquisition unit is used to acquire the maximum field of view size of a single exposure of the lithography machine, and select the size of the lithography plate according to the short side of the maximum field of view size. The determining unit is used to determine the number of times the metasurface lens with the target aperture is stitched together for photolithography based on the size of the photolithography plate. The second acquisition unit is used to acquire the structure to be lithographically etched, the structure to be lithographically etched including a substrate and a hard mask layer; An etching unit is used to etch the hard mask layer of each splicing region in different splicing regions of the structure to be photolithographically modeled using multiple photomasks of the same size as the photomask, according to the number of splicing operations, so as to obtain a patterned hard mask layer for all splicing regions. The substrate is etched using a patterned hard mask layer covering all the spliced ​​areas to obtain a metasurface lens with the target aperture.

9. A manufacturing apparatus for large-aperture metasurface lenses, characterized in that, The device includes: a processor and a memory; The memory is used to store instructions; The processor is configured to execute the instructions in the memory and perform the method as described in any one of claims 1-7.

10. A computer-readable medium, characterized in that, Includes instructions that, when executed on a computer, cause the computer to perform the method as described in any one of claims 1-7.

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