A low equivalent series resistance thin film structure and thin film capacitor

Abstract

This invention discloses a thin-film structure and a thin-film capacitor with low equivalent series resistance. The thin-film capacitor includes a shell, a core, and leads. The core is fixed inside the shell, and the leads electrically connect the core to an external circuit. The core includes a first film layer with a first metallized film layer formed on both sides; a second film layer with one side close to the first film layer and the other side forming a second metallized film layer; and a third film layer with one side close to the second film layer and forming a third metallized film layer, the second and third metallized film layers being conductive; the other side is close to the first film layer. The first, second, and third film layers are sequentially stacked to form the core. This invention features a metallized film layer between each of the two films. The bonding of the two metallized film layers reduces the equivalent series resistance without increasing the number of winding layers, thus lowering the low equivalent series resistance of the thin-film capacitor and improving performance.

Description

Technical Field

[0001] This invention relates to the field of thin-film capacitors, and particularly to a thin-film structure with low equivalent series resistance and a thin-film capacitor. Background Technology

[0002] With the rapid development of metallized film capacitor technology, the requirements for the current density capability of metallized film capacitors are becoming increasingly stringent.

[0003] The main factors limiting the current density capability of metallized film capacitors are: 1. the heat dissipation capability of the capacitor surface; 2. the heat dissipation capability inside the capacitor; and 3. the equivalent series resistance of the film capacitor.

[0004] The equivalent series resistance of a thin-film capacitor is mainly composed of the following parts: 1. Resistance caused by the loss angle of the base film; 2. Resistance of the metal plating layer; 3. Contact resistance between the plating layer and the gold plating layer; 4. Resistance of the gold plating layer; 5. Resistance between the gold plating layer and the lead-out terminal; 6. Resistance of the lead-out terminal.

[0005] Therefore, there is an urgent need for a thin film structure that can reduce the equivalent series resistance. Summary of the Invention

[0006] The present invention aims to at least partially solve one of the technical problems in the aforementioned art. Therefore, a first objective of the present invention is to provide a thin-film structure with low equivalent series resistance.

[0007] The second objective of this invention is to provide a thin-film capacitor.

[0008] To achieve the above objectives, embodiments of the present invention propose a thin-film structure with low equivalent series resistance, comprising: The first film layer is formed on both sides of the first metallization film layer; The second film layer has one side attached to the first film layer and the other side formed with a second metallization film layer; The third film layer has one side that is close to the second film layer, and a third metallized film layer is formed on this side, with the second metallized film layer and the third metallized film layer being electrically connected; the other side is close to the first film layer. The first, second, and third film layers are stacked sequentially to form a wound structure that constitutes the core of a thin-film capacitor.

[0009] According to the thin film structure with low equivalent series resistance of the present invention, a metallized film layer is provided between the second film layer and the third film layer. The two metallized film layers are bonded together to reduce the equivalent series resistance, thereby reducing the low equivalent series resistance of the thin film capacitor and improving its performance without increasing the number of winding layers.

[0010] In addition, the thin film structure with low equivalent series resistance proposed in the above embodiments of the present invention may also have the following additional technical features: Optionally, the first metallization film layer forms several first insulating strips along its length, and the first insulating strips divide the first metallization film into several locally connected first blocks. The first blocks, the first metallization film layer, and the third metallization film layer form an independent capacitor structure inside the capacitor. Furthermore, setting the number of the first block to an even number makes the electrical performance of the wound core more stable.

[0011] Optionally, the second metallization film layer forms a plurality of second insulating strips along the length direction, and the second insulating strips divide the second metallization film into a plurality of locally connected second blocks; The third metallization film layer forms several third insulating bands along its length, and the third insulating bands divide the third metallization film into several locally connected third blocks; The second and third insulating strips are positioned in a one-to-one correspondence, further enhancing the effect of the multiple capacitors generated by the wound core.

[0012] Furthermore, the number of the second and third blocks is the same; both are one less than the number of the first block, so that the final number of capacitors is an even number.

[0013] Furthermore, the same membrane layer can be composed of a combination of different materials.

[0014] Optionally, the thickness of the second metallized film layer varies along the width and / or length direction, and the thickness of the third metallized film layer also varies accordingly. The thickness regions of the two film layers are matched so that the overall thickness of the second metallized film layer and the third metallized film layer is consistent after they are bonded together.

[0015] To achieve the above objectives, embodiments of the present invention provide a thin-film capacitor, comprising a shell, a core, and leads. The core is fixed inside the shell by a potting compound, and the leads electrically connect the core to an external circuit. The core includes a first film layer with a first metallized film layer formed on both sides; a second film layer with one side close to the first film layer and the other side forming a second metallized film layer; and a third film layer with one side close to the second film layer and a third metallized film layer formed on this side, wherein the second and third metallized film layers are electrically connected; and the other side is close to the first film layer. The first, second, and third film layers are sequentially stacked to form a wound structure.

[0016] According to an embodiment of the present invention, the thin film capacitor has a metallized film layer between the second and third film layers of the core. The bonding of the two metallized film layers reduces the equivalent series resistance, thereby reducing the low equivalent series resistance of the thin film capacitor and improving its performance without increasing the number of winding layers.

[0017] The third metallization layer is the same shape as the second metallization layer and is bonded together. The same layer is made of a combination of different materials. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a stacked structure according to an embodiment of the present invention; Figure 2 This is a schematic diagram of a stacked structure according to another embodiment of the present invention; Figure 3 for Figure 2 A schematic diagram of the unfolded structure.

[0019] Label Explanation: First film layer 1; First metallization film layer 11 Second film layer 2, Second metallization film layer 21 Third film layer 3, third metallized film layer 31. Detailed Implementation

[0020] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0021] Because the second and third film layers both have metallized film layers, the bonding of the two metallized film layers reduces the equivalent series resistance, thereby reducing the low equivalent series resistance of the thin film capacitor and improving its performance without increasing the number of winding layers.

[0022] To better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the invention to those skilled in the art.

[0023] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0024] Figure 1 A thin film structure with low equivalent series resistance according to an embodiment of the present invention includes... First film layer 1, with first metallization film layer 11 formed on both sides; The second film layer 2 has one side close to the first film layer 1, and the other side forms a second metallization film layer 21; The third film layer 3 has one side close to the second film layer 2, and a third metallized film layer 31 is formed on this side, and the second metallized film layer 21 and the third metallized film layer 31 are connected; the other side is close to the first film layer 1. The first film layer 1, the second film layer 2, and the third film layer 3 are stacked in sequence to form a wound structure that constitutes the core of a thin-film capacitor. Furthermore, the same metallized film layer can be made of a single metal material or alloy.

[0025] Optionally, the second metallization layer 21 and the third metallization layer 31 are made of the same material.

[0026] Optionally, the second metallization layer 21 and / or the third metallization layer 31 are made of one or more different materials stacked together.

[0027] In some embodiments, the first metallization film layer forms a plurality of first insulating strips along the length direction. The first insulating strips divide the first metallization film into a plurality of locally connected first blocks. The first blocks divide the first metallization film layer into a plurality of relatively independent partitions. The partitions still maintain conductivity, but the sheet resistance in the first block is smaller. Therefore, the charge distribution trend is to first reach equilibrium in the block and then fill the adjacent blocks. In high-frequency environments, the above structure will cause the capacitor using this solution to form the electrical characteristics of multiple series capacitors inside.

[0028] The preferred approach is that the number of the first blocks is even, that is, the first metallization film is divided into two regions, and the first blocks do not have to be two regions of exactly the same size.

[0029] The second metallization film layer forms several second insulating strips along its length, and the second insulating strips divide the second metallization film into several locally connected second blocks; The third metallization film layer forms several third insulating bands along its length, and the third insulating bands divide the third metallization film into several locally connected third blocks; The correspondence between the first block, the second block, and the third block is as shown in the appendix to the instruction manual. Figure 2 As shown, several series capacitors, such as a, b, c, d, e, and f, are formed on the core, thereby making the electrical characteristics of the internal equivalent series capacitor more obvious. The second and third insulating strips are positioned in a one-to-one correspondence, so that the second and third blocks are also aligned and bonded together.

[0030] The number of the second and third blocks is the same; both are one less than the number of the first block, so that the number of internal equivalent series capacitors is an even multiple of 2, 4, 6...

[0031] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0032] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0033] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. The illustrative expressions of the above terms in this specification should not be construed as necessarily referring to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0034] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A thin-film structure with low equivalent series resistance, characterized in that, include: The first film layer is formed on both sides of the first metallization film layer; The second film layer has one side attached to the first film layer and the other side formed with a second metallization film layer; The third film layer has one side that is close to the second film layer, and a third metallized film layer is formed on this side, with the second metallized film layer and the third metallized film layer being electrically connected; the other side is close to the first film layer. The first, second, and third film layers are stacked sequentially to form a wound structure that constitutes the core of a thin-film capacitor.

2. The thin film structure with low equivalent series resistance as described in claim 1, characterized in that: The first metallized film layer forms several first insulating strips along its length, and the first insulating strips divide the first metallized film into several locally connected first blocks.

3. The thin film structure with low equivalent series resistance as described in claim 2, characterized in that: The number of the first blocks is even.

4. The thin film structure with low equivalent series resistance as described in claim 2, characterized in that: The second metallization film layer forms a plurality of second insulating strips along its length, and the second insulating strips divide the second metallization film into a plurality of partially connected second blocks; The third metallization film layer forms several third insulating strips along its length, and the third insulating strips divide the third metallization film into several locally connected third blocks; The second insulating strip and the third insulating strip are positioned in a one-to-one correspondence.

5. A thin film structure with low equivalent series resistance as described in claims 3 and 4, characterized in that: The number of the second block and the third block are the same; both are the number of the first block minus one.

6. A thin film structure with low equivalent series resistance as described in any one of claims 1 to 5, characterized in that: The same membrane layer is made up of a combination of different materials.

7. The thin film structure with low equivalent series resistance as described in claim 1, characterized in that: The thickness of the second metallized film layer varies along its width and / or length, and correspondingly, the thickness of the third metallized film layer also varies accordingly. The two film layers with different thicknesses match, so that the overall thickness of the second metallized film layer and the third metallized film layer is consistent after they are bonded together.

8. A thin-film capacitor, characterized in that, include: The device comprises a housing, a core, and pins, wherein the core is fixed inside the housing by potting compound, and the pins electrically connect the core to an external circuit; wherein the core is composed of the structure described in any one of claims 1 to 7.

Images