Adjustable plasma grid and semiconductor processing apparatus

Abstract

This invention relates to the field of wafer processing equipment technology, and more particularly to an adjustable plasma grid and semiconductor processing equipment, comprising a first grid body and a second grid body; the uniform air holes on the first grid body and the second grid body are matched and are axially correspondingly arranged; the first grid body includes an edge ring and a center ring coaxially arranged and rotatable relative to each other, the edge ring and the center ring corresponding to the edge region and the center region of the wafer, respectively; by rotating the edge ring and / or the center ring, the uniform air holes on the first grid body are aligned or offset from the uniform air holes on the second grid body; this invention can flexibly adjust the alignment or offset of the uniform air holes of the two grids by rotating the edge ring and / or the center ring, and can dynamically adapt to the plasma concentration differences between the center region and the edge region of the wafer under different process scenarios without stopping the machine to replace the grid.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to an adjustable plasma grid and semiconductor processing equipment. Background Technology

[0002] In plasma processes such as resist stripping and etching in wafer manufacturing, the plasma grid is the core hardware for controlling the distribution of process gases and the concentration of active particles. The distribution of its uniform orifices directly determines the uniformity of the process rate on the wafer surface. Current industry standard solutions use a single grid with a fixed orifice distribution, which can only fine-tune uniformity by adjusting parameters such as process pressure and gas ratio, resulting in extremely poor adaptability. For example, for process scenarios where the resist stripping rate is relatively fast in the center, a uniform orifice layout with "dense on the outside and sparse on the inside" is required to reduce the particle concentration in the central area; if switching to a process with a faster rate at the edge, a grid with "sparse on the outside and dense on the inside" needs to be replaced. This not only results in high replacement costs and long downtime, but also fails to cover the ever-changing process requirements. Summary of the Invention

[0003] This invention relates to an adjustable plasma grid and semiconductor processing equipment, aiming to solve the problem that existing grids with a single fixed hole distribution cannot adapt to changing process requirements and have high component replacement and debugging costs.

[0004] To achieve the above objectives, the present invention provides an adjustable plasma grid, comprising a first grid body and a second grid body; The first grid body and the second grid body are respectively installed in the window structure at the top of the processing chamber; both the first grid body and the second grid body have a number of uniform air holes that allow plasma to pass through along the axial direction, and the uniform air holes on the first grid body and the second grid body are matched and are arranged one-to-one in the axial direction. The first grid body includes an edge ring and a center ring that are coaxially arranged and rotatable relative to each other. The edge ring and the center ring correspond to the edge region and the center region of the wafer, respectively. By rotating the edge ring and / or the center ring, the air-level holes on the first grid body are aligned or offset from the air-level holes on the second grid body.

[0005] Optionally, the edge ring member includes several sub-edge ring members with different radii, and the several sub-edge ring members are concentrically nested on the same radial plane; Each of the sub-edge rings is provided with a uniform air hole, and two adjacent sub-edge rings can rotate relative to each other. By driving the rotation of the target sub-edge ring, the uniform air hole on the target sub-edge ring is aligned or offset from the uniform air hole at the corresponding position on the second grid body.

[0006] Optionally, the central ring component includes several sub-central components with different radii, and the several sub-central components are concentrically nested on the same radial plane; Each of the sub-center components is provided with air distribution holes, and two adjacent sub-center components can rotate relative to each other. By driving the rotation of the target sub-center component, the air distribution holes on the target sub-center component are aligned or offset from the air distribution holes at the corresponding positions on the second grid body.

[0007] Optionally, a plurality of the air-distributing holes are arranged at circumferential intervals to form at least one annular structure on the edge ring and the center ring. The circumferential spacing between two adjacent air-regulating holes on the central ring is the same as or different from the circumferential spacing between two adjacent air-regulating holes on the edge ring; the circumferential spacing between two adjacent air-regulating holes on both the central ring and the edge ring is greater than the diameter of the air-regulating hole.

[0008] Optionally, each of the sub-edge ring members is provided with a plurality of air equalization holes, and the plurality of air equalization holes are arranged at intervals along the circumferential direction to form at least one ring structure on each of the sub-edge ring members. The circumferential spacing between two adjacent air-regulating holes on two adjacent sub-edge rings is the same or different; and the circumferential spacing between two adjacent air-regulating holes on each of the two adjacent sub-edge rings is greater than the diameter of the air-regulating hole.

[0009] Optionally, each of the sub-center components is provided with a plurality of air equalization holes, and the plurality of air equalization holes are arranged at intervals along the circumferential direction to form at least one annular structure on each of the sub-center components. The circumferential spacing between two adjacent air-regulating holes on two adjacent sub-center components may be the same or different; and the circumferential spacing between two adjacent air-regulating holes on each of the two adjacent sub-center components is greater than the diameter of the air-regulating hole.

[0010] Optionally, the annular structure includes alternating dense-pore sections and sparse-pore sections extending circumferentially, wherein the circumferential spacing between two adjacent air-regulating holes in the sparse-pore section is greater than the circumferential spacing between two adjacent air-regulating holes in the dense-pore section.

[0011] Optionally, the adjustable plasma grid further includes a circumferential drive member, which is disposed at least once between the edge ring member and the window structure, and between the edge ring member and the central ring member; Alternatively, the circumferential drive member may be located at at least one of the two adjacent sub-edge ring members and the two adjacent sub-center members.

[0012] Optionally, the circumferential drive component includes a rotating part, a first drive part, and a plurality of second drive parts; The first mating portion and the second mating portion are respectively formed between the sidewalls of the sub-edge ring member and the inner sidewall of the window structure, between two adjacent sub-edge ring members, between two adjacent sub-center members, and between the sub-center member and the sub-edge ring member; The first docking part has a recessed support groove that extends circumferentially and is annular. The second docking part is fixedly provided with the rotating part, and the rotating part is slidably disposed in the support groove circumferentially. The first driving part is disposed in the rotating part, and a plurality of second driving parts are circumferentially spaced on the inner wall of the support groove. The first driving part and the plurality of second driving parts are respectively connected to an independent power supply. By controlling the power on and off of each second driving part, the first driving part is attracted and driven to rotate circumferentially with the sub-edge ring and / or the sub-center part.

[0013] Optionally, the adjustable plasma grid further includes: A support member is fixed to the inner wall of the window structure and located below the first grid body, and the support member extends radially. Several axial drive components are fixed to the top of the support component at radial intervals, and each axial drive component is arranged in a one-to-one correspondence with each sub-edge ring component and / or each sub-center component; Several locking components are fixed one-to-one with the driving end of each of the axial driving components, and move up and down under the drive of the axial driving components to abut against the bottom of the sub-edge ring component or the bottom of the sub-center component to lock or unlock.

[0014] Optionally, an elastic pad is fixed to the top of the locking member, and the top of the elastic pad is configured as a rounded head structure.

[0015] To achieve the above objectives, the present invention also provides a semiconductor processing apparatus, including a processing chamber, a dielectric window, and a fixed base, as well as the adjustable plasma grid, wherein the fixed base is disposed between the processing chamber and the dielectric window, and the first grid body and the second grid body within the adjustable plasma grid are respectively mounted on the window structure at the top of the processing chamber.

[0016] The beneficial effects of this invention are as follows: This invention features a first grid body, composed of a rotatable edge ring and a central ring, set in the first window of a fixed base. This grid body is axially matched with the uniform air holes on the second grid body in the second window at the top of the processing chamber. The alignment or misalignment of the uniform air holes in the two grids can be flexibly adjusted simply by rotating the edge ring and / or the central ring. This allows for dynamic adaptation to the plasma concentration differences between the center and edge regions of the wafer under different process scenarios without requiring downtime for grid replacement. This significantly reduces component replacement costs and downtime, and overcomes the limitation of traditional fixed-hole grids that can only fine-tune uniformity through process parameters. It effectively improves the flexibility of plasma distribution control and the uniformity of wafer processing speed, significantly enhancing the equipment's adaptability to different process requirements. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in some embodiments of the present invention; Figure 2 for Figure 1 An enlarged structural diagram of the structure at position A is shown below; Figure 3 for Figure 1 The diagram shows the structure of the first grid body.

[0018] Explanation of reference numerals in the attached figures: 1. Processing chamber; 101. Second window; 2. Medium window; 3. Fixed base; 4. First grid body; 41. Edge ring; 42. Central ring; 43. Air distribution hole; 5. Second grid body; 6. Circumferential drive; 61. Rotating part; 62. Support groove; 63. First drive part; 64. Second drive part; 8. Supporting part; 9. Axial drive part; 10. Locking part. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0020] This invention relates to an adjustable plasma grid and semiconductor processing equipment, aiming to solve the problem that existing grids with a single fixed hole distribution cannot adapt to changing process requirements and have high component replacement and debugging costs.

[0021] To address the problems existing in the prior art, embodiments of the present invention provide an adjustable plasma grid, such as... Figure 1 As shown, the adjustable plasma grid includes a first grid body 4 and a second grid body 5.

[0022] In some embodiments, such as Figure 1 As shown, the top of the processing chamber 1 is provided with a window structure, and the first grid body 4 and the second grid body 5 are respectively installed in the window structure. The window structure includes a first window correspondingly disposed on the fixed base 3 and / or a second window 101 disposed on the top wall of the processing chamber 1, wherein the fixed base 3 is located at the top of the processing chamber 1.

[0023] In some specific embodiments, the first grid body 4 is disposed in the first window of the fixed base 3, and the second grid body 5 is disposed in the second window 101 of the top wall of the processing chamber 1. Of course, in other embodiments, the first grid body 4 and the second grid body 5 can also be disposed in the same window, for example, both disposed in the first window. Both the first grid body 4 and the second grid body 5 have a plurality of uniform air holes 43 through which plasma can pass along the axial direction, and the uniform air holes 43 on the first grid body 4 and the second grid body 5 are matched and arranged one-to-one in the axial direction.

[0024] The matching of the air distribution holes 43 on the first grid body 4 and the second grid body 5 can be understood as the same hole diameter, the same number of holes, the same spacing between adjacent holes, and the same opening direction. After adjustment and alignment, it can be understood that the air distribution holes 43 on the first grid body 4 and the second grid body 5 are coaxially connected.

[0025] In some embodiments, such as Figure 1 As shown, the first grid body 4 includes an edge ring 41 and a center ring 42 that are coaxially arranged and rotatable relative to each other. The edge ring 41 and the center ring 42 correspond to the edge region and the center region of the wafer, respectively. By rotating the edge ring 41 and / or the center ring 42, the air equalization holes 43 on the first grid body 4 are aligned or offset from the air equalization holes 43 on the second grid body 5.

[0026] The first grid body 4 is radially divided into two independent rotating units corresponding to the wafer edge region and the center region. By rotating the edge ring 41 and the center ring 42 relative to each other circumferentially, the axial overlap of the uniform air holes 43 on the first grid body 4 and the second grid body 5 can be flexibly changed. When the positions of the uniform air holes 43 on the edge ring 41 and / or the center ring 42 are aligned with the corresponding positions of the uniform air holes 43 on the second grid body 5, the plasma flux is maximized, resulting in the highest plasma concentration in the corresponding wafer region. Conversely, when the positions of the uniform air holes 43 on the edge ring 41 and / or the center ring 42 are misaligned with the corresponding positions of the uniform air holes 43 on the second grid body 5, the plasma flux is minimized, resulting in a lower plasma concentration in the corresponding wafer region. This design achieves differentiated adjustment of plasma concentration between the wafer edge region and the center region without hardware replacement, matching the etching or deposition rate requirements of different process scenarios from the source of airflow distribution.

[0027] In other embodiments, the adjustment is not limited to making the uniform air holes 43 on the first grid body 4 and the second grid body 5 completely aligned or completely offset. The offsetting of the uniform air holes 43 on the first grid body 4 and the second grid body 5 also includes partial overlap in the axial direction. This allows for controllable adjustment of the overlap area by combining the cross-sectional area characteristics of the cavity of the uniform air holes 43. For example, by changing the size of the overlap area of ​​two corresponding uniform air holes 43 on the first grid body 4 and the second grid body 5, the amount of plasma passing through can be further controlled, making the adjustment of the present invention more flexible and applicable to a wider range of process scenarios.

[0028] exist Figure 1 In this embodiment, the second grid body 5 is fixed within the second window 101. However, in other embodiments, the second grid body 5 can also rotate within the second window 101, and the second grid body 5 may also include a relatively rotating edge ring 41 and a center ring 42; these details will not be elaborated here. Meanwhile, in Figure 1 In this embodiment, the first grid body 4 and the second grid body 5 are respectively disposed in the first window and the second window 101. In other embodiments, the first grid body 4 and the second grid body 5 can also be disposed in the same window. For example, they can be disposed together in the first window. This will not be elaborated here.

[0029] In some embodiments, such as Figure 3 As shown, the edge ring 41 includes a plurality of sub-edge rings with different radii, and the plurality of sub-edge rings are concentrically nested on the same radial plane (e.g., in...). Figure 3As shown, there are two sub-edge rings, namely sub-edge ring 411 and sub-edge ring 412. Each sub-edge ring is provided with a uniform gas hole 43, and two adjacent sub-edge rings can rotate relative to each other. By driving the rotation of the target sub-edge ring, the uniform gas hole 43 on the target sub-edge ring is aligned or staggered with the uniform gas hole 43 at the corresponding position of the second grid body 5, so as to form at least two radially arranged independent adjustable plasma uniform gas partitions in the edge region.

[0030] The edge ring 41 includes several sub-edge rings with different radii, which subdivide the wafer edge region radially into several independent gas uniformity zones, achieving refined "zonal management" of the edge region concentration distribution. For example, during the wafer stripping process, if residual adhesive layer is detected in the outer ring region 200mm to 220mm from the wafer center (i.e., the stripping rate is slow), while the stripping rate of the outermost edge region 220mm to 240mm is normal, there is no need to adjust the rotation of the entire edge ring 41. Only the sub-edge rings at the corresponding 200mm to 220mm radius position need to be driven to rotate individually, adjusting the complete alignment or partial overlap of the gas uniformity holes 43 in this region with the gas uniformity holes 43 on the second grid body 5, thereby specifically improving the plasma flux in this region. At the same time, the sub-edge rings at the 220mm to 240mm position are kept stationary to avoid over-etching of the outermost ring. This "point-and-shoot" adjustment method can more accurately correct the plasma quantity in multiple regions within the wafer edge area compared to the traditional grid structure, greatly improving the control capability of edge uniformity. It is particularly suitable for process scenarios with extremely high requirements for edge region yield in advanced processes of 28nm and below.

[0031] In some embodiments, such as Figure 3 As shown, the central ring member 42 includes several sub-central members with different radii, and the several sub-central members are concentrically nested on the same radial plane (e.g., in...). Figure 3 As shown, the sub-center component includes a central ring and a disk component located at the center of the sub-center component (the central ring is sleeved on the disk component). Each sub-center component is provided with a uniform gas distribution hole 43, and two adjacent sub-center components can rotate relative to each other. By driving the rotation of the target sub-center component, the uniform gas distribution hole 43 on the target sub-center component is aligned or offset from the uniform gas distribution hole 43 at the corresponding position of the second grid body 5, so as to form at least two independently adjustable plasma uniform gas distribution zones arranged radially in the central region.

[0032] By dividing the central ring 42 into a disk-shaped core region and multiple ring-shaped layered adjustment regions, a gradient fine control of the wafer's central region from the core to the transition zone is achieved, avoiding the problems of over-etching or insufficient etching rate caused by the "one-size-fits-all" adjustment of the traditional single central grid. For example, when performing high-precision etching on a 12-inch wafer, if the etching rate of the core region within a 50mm radius of the wafer center is detected to be too fast (easily leading to central depression), while the rate of the transition region from 50mm to 150mm is uniform, there is no need to adjust the edge ring 41. Only the innermost disk-shaped sub-center component needs to be driven to rotate relative to the second grid body 5 to reduce the overlap area of ​​its central gas equalization hole 43 with the second grid gas equalization hole 43 or to directly offset it. This can reduce the plasma flux of the central core region and suppress over-etching. At the same time, the ring-shaped sub-center components from 50mm to 150mm remain in place to ensure that the rate of the transition region is not affected. This layered, independently adjustable design not only precisely matches the process requirements of different radial positions in the wafer's central region, but also effectively corrects the plasma distribution in the central region through multi-zone collaborative optimization, significantly improving the uniformity of the overall wafer etching or deposition and the process yield.

[0033] In some embodiments, such as Figure 3 As shown, a plurality of the air-regulating holes 43 are arranged at circumferential intervals to form at least one annular structure on the edge ring 41 and the center ring 42; the circumferential spacing between two adjacent air-regulating holes 43 on the center ring 42 is the same as or different from the circumferential spacing between two adjacent air-regulating holes 43 on the edge ring 41; and the circumferential spacing between two adjacent air-regulating holes 43 on the center ring 42 and the edge ring 41 is greater than the aperture of the air-regulating hole 43.

[0034] This embodiment is designed to address the different requirements of plasma concentration gradients in the center and edge regions of a wafer under different manufacturing processes. In the first scenario, when the circumferential spacing between two adjacent uniform air holes 43 on the central ring 42 is greater than the circumferential spacing between two adjacent uniform air holes 43 on the edge ring 41 (i.e., "dense on the outside and sparse on the inside"), the corresponding hole density per unit area in the edge region is higher. This is suitable for scenarios where the removal of resist or etching rate in the wafer edge region is slow, and the edge region effect is compensated by increasing the air intake in the edge region. In the second scenario, when the circumferential spacing between two adjacent uniform air holes 43 on the central ring 42 is less than the circumferential spacing between two adjacent uniform air holes 43 on the edge ring 41 (i.e., "sparse on the outside and dense on the inside"), the corresponding hole density per unit area in the central region is higher. This is suitable for deep hole filling or deposition processes where the rate in the central region is low, and prevents the depletion of reactants in the central region. In the third scenario, when the circumferential spacing of the two is equal, the first grid body 4 and the second grid body 5 together form a uniform gas field, which is suitable for standard processes with extremely high requirements for global uniformity and small differences between the edge region and the central region.

[0035] In some embodiments, such as Figure 3 As shown, each of the sub-edge ring members has multiple air distribution holes 43, and the multiple air distribution holes 43 are arranged at intervals along the circumference to form at least one ring structure on each of the sub-edge ring members; the circumferential spacing between two adjacent air distribution holes 43 on two adjacent sub-edge ring members is the same or different; and the circumferential spacing between two adjacent air distribution holes 43 on each of two adjacent sub-edge ring members is greater than the aperture of the air distribution hole 43.

[0036] This configuration is designed to achieve fine-grained gradient adjustment of plasma concentration on different radially intersecting sub-edge rings in the wafer edge region. By varying the circumferential spacing between adjacent uniformly spaced holes 43 on adjacent sub-edge rings, it flexibly matches the requirements of various process windows. In the first scenario, when the circumferential spacing between adjacent uniformly spaced holes 43 on the outer sub-edge ring is greater than that on the inner sub-edge ring (i.e., "sparser on the outside, denser on the inside"), the hole density decreases closer to the wafer edge. This is suitable for processes with faster edge rates, suppressing over-etching or edge warping by reducing the plasma flux in the outermost ring. In the second scenario, when the circumferential spacing between adjacent uniformly spaced holes 43 on the outer sub-edge ring is smaller... When the circumferential spacing between two adjacent uniformly spaced holes 43 on the inner sub-edge ring is set (i.e., "dense on the outside and sparse on the inside"), the hole density is higher closer to the wafer edge. This is suitable for scenarios where the edge velocity is slow or plasma depletion is likely to occur. By enhancing the edge gas intake, the reactive activity is compensated, and edge uniformity is improved. In the third case, when the circumferential spacing between two adjacent uniformly spaced holes 43 on adjacent sub-edge rings is equal, a uniform gas density with a consistent radial direction is formed in the edge region. This is suitable for processes where the transition between the edge region and the center region is gentle and the edge gradient requirement is not high. This multi-level, variable circumferential spacing uniformly spaced hole 43 density design allows the first grid body 4 and the second grid body 5 to construct concentration distribution curves with arbitrary slopes at the wafer edge. This effectively solves the problem that a single fixed density grid is difficult to adapt to complex edge effects and significantly improves the freedom of process adjustment.

[0037] In some embodiments, such as Figure 3 As shown, each of the sub-center components has multiple air distribution holes 43, and the multiple air distribution holes 43 are arranged at intervals along the circumference to form at least one annular structure on each of the sub-center components; the circumferential spacing between two adjacent air distribution holes 43 on two adjacent sub-center components is the same or different; and the circumferential spacing between two adjacent air distribution holes 43 on each of two adjacent sub-center components is greater than the aperture of the air distribution hole 43.

[0038] This setup is designed to create a flexible radial concentration gradient in the center region of the wafer, adapting to the varying plasma concentration requirements of different processes in the center region. In the first scenario, when the circumferential spacing between two adjacent uniform vent holes 43 on the inner sub-center is greater than that on the outer sub-center (i.e., "sparse inside, dense outside"), the core region has a lower vent density closer to the center. This is suitable for scenarios where the etching or deposition rate in the core region of the wafer center is relatively fast, and by reducing the plasma flux in the core region, it can suppress excessive consumption or the formation of depressions in the core region. In the second scenario, when the circumferential spacing between two adjacent uniform vent holes 43 on the inner sub-center is less than that on the outer sub-center (i.e., "dense inside, sparse outside"), the vent density is higher closer to the core region. This is suitable for processes such as deep hole filling and thick film deposition where the core region has a slower rate, ensuring that the core region receives sufficient plasma flux. In the third scenario, when the circumferential spacing between two adjacent uniform vent holes 43 on adjacent sub-centers is equal, a uniform vent distribution is formed in the central region. This is suitable for standard processes that require high flatness in the central region and do not require special gradient adjustment.

[0039] In some embodiments, the annular structure includes alternating dense and sparse perforated sections extending circumferentially, wherein the circumferential distance between two adjacent air-regulating holes 43 within the sparse perforated section is greater than the circumferential distance between two adjacent air-regulating holes 43 within the dense perforated section. The second grid body 5 also has an annular structure, which includes alternating dense and sparse perforated sections extending circumferentially, and the annular structures on the first grid body 4 and the second grid body 5 are correspondingly arranged.

[0040] By pre-setting alternating dense and sparse pore sections in the circumferential direction on each annular structure, the original continuous uniform gas regulation is transformed into modular flux control of "segment to segment". When a high concentration of plasma flux is required in the central or peripheral region, simply drive the first grid body 4 to rotate, so that the densely perforated segments of each annular structure on the first grid body 4 are precisely aligned axially with the corresponding densely perforated segments on the second grid body 5, or so that the sparsely perforated segments of each annular structure on the first grid body 4 are precisely aligned axially with the corresponding sparsely perforated segments on the second grid body 5. At this time, the two grids with high density uniform air holes 43 overlap, forming the largest effective flow area, and the plasma penetration rate is significantly improved. Conversely, when the process requires a low concentration environment, drive the first grid body 4 to rotate, so that the sparsely perforated segments on the first grid body 4 are aligned with the densely perforated segments on the second grid body 5, or so that the densely perforated segments on the first grid body 4 are aligned with the sparsely perforated segments on the second grid body 5. By using the misalignment and shielding between the low-density hole area and the high-density hole area, the effective conduction area is greatly reduced, thereby significantly reducing the plasma flux.

[0041] In some embodiments, such as Figure 2 As shown, the adjustable plasma grid also includes a circumferential drive 6, which is disposed at least once between the edge ring 41 and the window structure, and between the edge ring 41 and the central ring 42.

[0042] In some embodiments, such as Figure 2 As shown, the circumferential driving member 6 is disposed at least at one of the two adjacent sub-edge ring members and the two adjacent sub-center members.

[0043] In this embodiment, the circumferential drive member 6 is configured to drive the edge ring member 41 to rotate relative to the window structure, or to drive either the edge ring member 41 or the center ring member 42 to rotate relative to the other. Alternatively, the circumferential drive member 6 is configured to drive one of two adjacent sub-edge ring members or two adjacent sub-center members to rotate relative to the other.

[0044] By setting the circumferential drive component 6, the relative positions of the edge ring component 41 with the window structure and the central ring component 42, as well as the relative positions between each sub-center component and each sub-edge ring component, can be adjusted respectively, so as to flexibly match the different requirements of different processes for plasma distribution uniformity.

[0045] In some embodiments, such as Figure 2 As shown, the circumferential drive member 6 includes a rotating part 61, a first drive part 63, and a plurality of second drive parts 64.

[0046] In some embodiments, such as Figure 2 As shown, the first mating portion and the second mating portion are respectively formed between the sidewalls of the sub-edge ring member and the inner sidewall of the window structure, between two adjacent sub-edge ring members, between two adjacent sub-center members, and between the sub-center member and the sub-edge ring member; In some embodiments, such as Figure 2 As shown, the first docking part has a recessed support groove 62 that extends circumferentially and has an annular cavity. The second docking part is fixedly provided with the rotating part 61, and the rotating part 61 is slidably disposed in the support groove 62 circumferentially. The first driving part 63 is disposed in the rotating part 61, and a plurality of second driving parts 64 are circumferentially spaced on the inner wall of the support groove 62. The first driving part 63 and the plurality of second driving parts 64 are respectively connected to an independent power supply. By controlling the power on and off of each second driving part 64, the first driving part 63 is attracted and driven to rotate circumferentially with the sub-edge ring and / or the sub-center part.

[0047] In some specific embodiments, such as Figure 2 As shown, the rotating part 61 is provided on the edge ring 41 and the center ring 42, and the support groove 62 is provided on the window structure.

[0048] In this embodiment, the sliding fit between the support groove 62 and the rotating part 61 provides a stable circumferential motion track for the sub-edge ring and sub-center parts, ensuring that no radial deviation occurs during the rotation process. At the same time, by utilizing the multiple second driving parts 64 distributed circumferentially within the support groove 62, the direction and magnitude of the magnetic attraction force on the first driving part 63 can be flexibly adjusted by independently controlling the on / off timing of each second driving part 64. This achieves precise step control of the rotation angle, speed, and start / stop position of the sub-edge ring and sub-center parts, enabling fine adjustment of the plasma distribution pattern without the need for a complex mechanical transmission structure. This simplifies the complexity of the drive system and improves the flexibility and accuracy of process control.

[0049] In some embodiments, such as Figure 2 and Figure 3 As shown, the adjustable plasma grid also includes a support member 8, several axial drive members 9, and several locking members 10. In some embodiments, such as Figure 2 and Figure 3 As shown, the support member 8 is fixed to the inner wall of the window structure and located below the first grid body 4. The support member 8 extends radially. The structure of the support member 8 may be, but is not limited to, a rectangular rod structure.

[0050] In some embodiments, such as Figure 2 and Figure 3 As shown, a plurality of axial drive members 9 are fixed radially spaced on the top of the support member 8, preferably arranged at equal intervals; and each axial drive member 9 is correspondingly arranged with each sub-edge ring member and / or each sub-center member. It can be understood that the total number of axial drive members 9 is consistent with the total number of sub-edge ring members and sub-center members, and one sub-edge ring member corresponds to one axial drive member 9, and one sub-center member also corresponds to one axial drive member 9; preferably, the axial drive members 9 are located directly below the sub-center members and the sub-edge ring members.

[0051] In some embodiments, such as Figure 2 and Figure 3 As shown, several locking members 10 are fixed one-to-one with the driving end of each of the axial driving members 9, and move up and down under the drive of the axial driving members 9, so as to abut against the bottom of the sub-edge ring member or the bottom of the sub-center member to lock or unlock.

[0052] By configuring independent locking elements 10 and axial drive elements 9 for each sub-center and sub-edge ring, differentiated locking control of different sub-center or sub-edge rings can be achieved. This ensures that when some sub-center or sub-edge rings are rotated and adjusted, the remaining sub-center or sub-edge rings maintain a stable axially locked state, avoiding mutual interference. For example, when only the rotation of one sub-edge ring needs to be adjusted to optimize the plasma distribution in the wafer edge region, all locking elements 10 except those corresponding to that sub-edge ring can be controlled to rise and hold the corresponding sub-edge ring and sub-center, keeping the held sub-edge ring and sub-center stationary.

[0053] In some embodiments, the locking member 10 may be a cylindrical rod structure, but is not limited to a cylindrical rod structure.

[0054] In some embodiments, such as Figure 2 As shown, an elastic pad is fixed to the top of the locking member 10, and the top of the elastic pad is set with a rounded head structure. Utilizing the deformation buffering characteristics of the elastic pad, it absorbs the impact force when the locking member 10 rises to abut against the sub-edge ring member or sub-center member, avoiding wear on the bottom of the sub-edge ring member and sub-center member caused by rigid collision; at the same time, setting the top of the elastic pad with a rounded head structure can reduce the initial contact area with the bottom of the sub-edge ring member or sub-center member, avoiding hard contact with sharp corners that scratch the surface of the sub-edge ring member and sub-center member.

[0055] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor processing apparatus, such as... Figure 1 As shown, the semiconductor processing device includes a processing chamber 1, a dielectric window 2, and a fixed base 3, as well as the adjustable plasma grid. The fixed base 3 is located between the processing chamber 1 and the dielectric window 2. The first grid body 4 and the second grid body 5 of the adjustable plasma grid are respectively installed on the window structure at the top of the processing chamber 1.

[0056] In some embodiments, the semiconductor processing equipment can be any one of plasma etching equipment, ashing and resist removal equipment, or chemical vapor deposition equipment. All three types of equipment can rely on the two-layer uniform air holes 43 of the adjustable plasma grid for alignment or staggering adjustment mechanism to dynamically match the different requirements of different processes for plasma concentration in the central and edge regions of the wafer: In the etching equipment, the problem of over-etching in the central region and insufficient etching rate in the edge region can be specifically corrected to improve the dimensional uniformity of pattern transfer; In the resist removal equipment, the plasma flux in each region can be flexibly adjusted according to the resist layer residue distribution to avoid local residue or excessive ashing damage to the substrate; In the deposition equipment, the reactant supply in the central and edge regions can be optimized to reduce the difference in film thickness gradient and step coverage, and can cover various process scenarios without stopping the machine to change parts, greatly reducing debugging costs and improving production line uptime.

[0057] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An adjustable plasma grid, characterized in that, Includes a first grid body and a second grid body; The first grid body and the second grid body are respectively installed in the window structure at the top of the processing chamber; both the first grid body and the second grid body have a number of uniform air holes that allow plasma to pass through along the axial direction, and the uniform air holes on the first grid body and the second grid body are matched and are arranged one-to-one in the axial direction. The first grid body includes an edge ring and a center ring that are coaxially arranged and rotatable relative to each other. The edge ring and the center ring correspond to the edge region and the center region of the wafer, respectively. By rotating the edge ring and / or the center ring, the air-level holes on the first grid body are aligned or offset from the air-level holes on the second grid body.

2. The adjustable plasma grid according to claim 1, characterized in that, The edge ring component includes several sub-edge ring components with different radii, and the several sub-edge ring components are concentrically nested on the same radial plane; Each of the sub-edge rings is provided with a uniform air hole, and two adjacent sub-edge rings can rotate relative to each other. By driving the rotation of the target sub-edge ring, the uniform air hole on the target sub-edge ring is aligned or offset from the uniform air hole at the corresponding position on the second grid body.

3. The adjustable plasma grid according to claim 2, characterized in that, The central ring component includes several sub-central components with different radii, and the several sub-central components are concentrically nested on the same radial plane; Each of the sub-center components is provided with air distribution holes, and two adjacent sub-center components can rotate relative to each other. By driving the rotation of the target sub-center component, the air distribution holes on the target sub-center component are aligned or offset from the air distribution holes at the corresponding positions on the second grid body.

4. The adjustable plasma grid according to claim 1, characterized in that, A plurality of the air-distributing holes are arranged at circumferential intervals to form at least one annular structure on the edge ring and the center ring; The circumferential spacing between two adjacent air-regulating holes on the central ring is the same as or different from the circumferential spacing between two adjacent air-regulating holes on the edge ring; the circumferential spacing between two adjacent air-regulating holes on both the central ring and the edge ring is greater than the diameter of the air-regulating hole.

5. The adjustable plasma grid according to claim 2, characterized in that, Each of the sub-edge ring members has multiple air distribution holes, and the multiple air distribution holes are arranged at intervals along the circumferential direction to form at least one ring structure on each of the sub-edge ring members. The circumferential spacing between two adjacent air-regulating holes on two adjacent sub-edge rings is the same or different; and the circumferential spacing between two adjacent air-regulating holes on each of the two adjacent sub-edge rings is greater than the diameter of the air-regulating hole.

6. The adjustable plasma grid according to claim 3, characterized in that, Each of the sub-center components has multiple air distribution holes, and the multiple air distribution holes are arranged at intervals along the circumferential direction to form at least one annular structure on each of the sub-center components. The circumferential spacing between two adjacent air-regulating holes on two adjacent sub-center components may be the same or different; and the circumferential spacing between two adjacent air-regulating holes on each of the two adjacent sub-center components is greater than the diameter of the air-regulating hole.

7. The adjustable plasma grid according to claim 4, 5, or 6, characterized in that, The annular structure includes alternating dense and sparse pore sections extending circumferentially, wherein the circumferential distance between two adjacent air-regulating pores in the sparse pore section is greater than the circumferential distance between two adjacent air-regulating pores in the dense pore section.

8. The adjustable plasma grid according to claim 3, characterized in that, It also includes a circumferential drive member, which is disposed at least once between the edge ring member and the window structure, and between the edge ring member and the center ring member; Alternatively, the circumferential drive member may be located at at least one of the two adjacent sub-edge ring members and the two adjacent sub-center members.

9. The adjustable plasma grid according to claim 8, characterized in that, The circumferential drive component includes a rotating part, a first drive part, and several second drive parts; The first mating portion and the second mating portion are respectively formed between the sub-edge ring member and the inner sidewall of the window structure, between two adjacent sub-edge ring members, between two adjacent sub-center members, and between the sub-center member and the sub-edge ring member; The first docking part has a recessed support groove that extends circumferentially and is annular. The second docking part is fixedly provided with the rotating part, and the rotating part is slidably disposed in the support groove circumferentially. The first driving part is disposed in the rotating part, and a plurality of second driving parts are circumferentially spaced on the inner wall of the support groove. The first driving part and the plurality of second driving parts are respectively connected to an independent power supply. By controlling the power on and off of each second driving part, the first driving part is attracted and driven to rotate circumferentially with the sub-edge ring and / or the sub-center part.

10. The adjustable plasma grid according to claim 3, characterized in that, Also includes: A support member is fixed to the inner wall of the window structure and located below the first grid body, and the support member extends radially. Several axial drive components are fixed to the top of the support component at radial intervals, and each axial drive component is arranged in a one-to-one correspondence with each sub-edge ring component and / or each sub-center component; Several locking components are fixed one-to-one with the driving end of each of the axial driving components, and move up and down under the drive of the axial driving components to abut against the bottom of the sub-edge ring component or the bottom of the sub-center component to lock or unlock.

11. The adjustable plasma grid according to claim 10, characterized in that, An elastic pad is fixed to the top of the locking member, and the top of the elastic pad is configured as a round head structure.

12. A semiconductor processing apparatus, characterized in that, The device includes a processing chamber, a medium window, and a fixed base, as well as an adjustable plasma grid as described in any one of claims 1 to 11, wherein the fixed base is disposed between the processing chamber and the medium window, and the first grid body and the second grid body within the adjustable plasma grid are respectively installed on the window structure at the top of the processing chamber.

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