A preparation process method of a DFB laser

Abstract

This application provides a fabrication process for a DFB laser. The method includes: bonding a DFB chip to a substrate using a refrigerated, passive temperature drift compensation packaging process to obtain an optical component; bonding the DFB chip to a housing and welding the optical fiber and housing under low-temperature vacuum conditions; aligning the optical component to the housing using two-dimensional mechanics; filling the housing with nitrogen gas and sealing it using a parallel seam welding process; and fabricating the DFB laser after testing. In this application, the refrigerated, passive temperature drift compensation packaging process is used, eliminating reliance on TEC active cooling; welding the optical fiber and housing under low-temperature vacuum conditions improves airtightness; and the coupling method does not employ three-dimensional active peak finding, but rather a two-dimensional mechanical method to achieve optical coupling, improving alignment efficiency.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a fabrication process method for a DFB laser. Background Technology

[0002] Existing fabrication processes for distributed feedback (DFB) lasers generally rely on active cooling using thermoelectric coolers (TECs), resulting in high power consumption, large size, significant thermal stress, and substantial temperature drift. Hermetic packaging often employs high-temperature brazing / glass sealing, which can easily damage the chip and leads to poor hermeticity consistency. Optical coupling depends on three-dimensional active peak finding, which is inefficient, has poor batch-to-batch consistency, and is difficult to scale up for mass production. Summary of the Invention

[0003] This application provides a fabrication process for a DFB laser, aiming to solve the technical problems of existing DFB laser fabrication processes that rely on TEC active cooling, have poor gas tightness consistency, and rely on three-dimensional active peak finding for optical coupling.

[0004] In a first aspect, embodiments of this application provide a method for fabricating a DFB laser, the method comprising:

[0005] An optical component is obtained by bonding a DFB chip to a substrate using a cooling-free, passive temperature drift compensation packaging process.

[0006] The DFB chip and the housing are bonded together, and the optical fiber and the housing are welded together in a low-temperature vacuum environment.

[0007] The optical components are aligned with the tube shell using two-dimensional mechanics;

[0008] Nitrogen gas was introduced into the tube shell, and the shell was sealed using a parallel seam welding process. After passing the test, the DFB laser was obtained.

[0009] Optionally, the DFB chip is bonded to the substrate using a non-cooling, passive temperature drift compensation packaging process to obtain an optical component, including:

[0010] Select a substrate;

[0011] The chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss of the substrate are processed;

[0012] The DFB chip is attached to the chip carrier stage of the substrate;

[0013] The DFB chip was optically calibrated.

[0014] The substrate is stress-fixed;

[0015] The optical fiber is fixed in the positioning V-groove of the substrate to obtain the optical component.

[0016] Optionally, the chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss for processing the substrate include:

[0017] A chip carrier stage, an optical path transition stage, a positioning V-groove, and a limiting boss are fabricated on the substrate surface;

[0018] The substrate is subjected to alkaline ultrasonic cleaning, deionized water rinsing, and acid washing;

[0019] The cleaned substrate was dried with nitrogen gas.

[0020] The substrate is subjected to plasma activation treatment.

[0021] Optionally, attaching the DFB chip to the chip carrier stage on the substrate includes:

[0022] Conductive silver paste is selected;

[0023] A dispensing machine is used to dispense adhesive into the central area of ​​the chip carrier platform.

[0024] Use a vacuum nozzle to pick up the DFB chip;

[0025] Align the DFB chip with the chip carrier stage so that the DFB chip is attached to the chip carrier stage of the substrate;

[0026] The substrate is subjected to a heating and curing process.

[0027] Optionally, the optical path calibration of the DFB chip includes:

[0028] The optical path transition stage on the substrate is pre-installed with a mode conversion waveguide and a lens;

[0029] An optical adhesive is applied between the light-emitting surface of the DFB chip and the lens;

[0030] The DFB chip is used for optical path calibration.

[0031] Optionally, the stress fixation of the substrate includes:

[0032] Apply epoxy adhesive to the edges of the substrate;

[0033] The substrate is then cured.

[0034] Optionally, the step of fixing the optical fiber in the positioning V-groove of the substrate to obtain the optical component includes:

[0035] The optical fiber is placed in the positioning V-groove of the substrate;

[0036] The optical fiber is cured using UV adhesive and thermosetting adhesive to obtain the optical component;

[0037] The optical components are subjected to wide-temperature calibration and passive compensation locking.

[0038] The optical components are placed in a vacuum oven for baking.

[0039] Optionally, the bonding process between the DFB chip and the casing includes:

[0040] Clean the chip electrodes, transition pads, and lead pins of the DFB chip;

[0041] Following the order of chip electrodes, transition pads, and case pins, gold wire is used to bond the DFB chip to the case.

[0042] Optionally, the welding of the optical fiber and the tube shell in a low-temperature vacuum environment includes:

[0043] The optical fiber is pretreated, and then chemically plated with nickel or gold.

[0044] The inner wall of the through hole in the tube shell is gold-plated.

[0045] The optical fiber is inserted into the through hole of the tube shell, so that the metal layer of the optical fiber is attached to the metal layer of the through hole;

[0046] The optical fiber and the tube shell are placed in a vacuum furnace for heat preservation, thereby achieving the welding of the optical fiber and the tube shell.

[0047] Optionally, aligning the optical component with the housing using two-dimensional mechanics includes:

[0048] Clean the optical components and the housing;

[0049] The alignment of the substrate and the tube shell is achieved by using the positioning V-groove and limiting boss of the substrate in the optical component in two-dimensional mechanics.

[0050] UV-curable adhesive is applied to the coupling interface between the substrate and the shell to complete the initial curing.

[0051] The substrate and the casing are subjected to step curing;

[0052] A buffer adhesive is filled between the DFB chip and the optical fiber, and then cured.

[0053] This application provides a fabrication process for a DFB laser, comprising: bonding a DFB chip to a substrate using a refrigerated, passive temperature drift compensation packaging process to obtain an optical component; bonding the DFB chip to a housing and welding the optical fiber and housing under low-temperature vacuum conditions; aligning the optical component to the housing using two-dimensional mechanics; filling the housing with nitrogen gas and sealing it using a parallel seam welding process; and, after testing, fabricating the DFB laser. In this application, the refrigerated, passive temperature drift compensation packaging process is used, eliminating reliance on TEC active cooling; welding the optical fiber and housing under low-temperature vacuum conditions improves hermeticity; and the coupling method does not employ three-dimensional active peak finding, but rather a two-dimensional mechanical method to achieve optical coupling, improving alignment efficiency. Attached Figure Description

[0054] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0055] Figure 1 This is a flowchart of a fabrication process for a DFB laser provided in an embodiment of this application. Detailed Implementation

[0056] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0057] See Figure 1 , Figure 1 This is a flowchart of a fabrication process for a DFB laser provided in an embodiment of this application, as shown below. Figure 1 As shown, the method includes the following steps:

[0058] Step 101: Using a cooling-free, passive temperature drift compensation packaging process, the DFB chip is bonded to the substrate to obtain the optical component.

[0059] Step 102: Bond the DFB chip to the housing, and weld the optical fiber and the housing in a low-temperature vacuum environment.

[0060] Step 103: Align the optical component with the tube shell using two-dimensional mechanics.

[0061] Step 104: Nitrogen gas is introduced into the tube shell and the shell is sealed using a parallel seam welding process. After passing the test, the DFB laser is obtained.

[0062] In this embodiment, a passive temperature drift compensation packaging process without cooling is used to bond the DFB chip to the substrate to obtain an optical component.

[0063] Optionally, the substrate is a ceramic substrate.

[0064] The DFB chip and the housing are bonded; optionally, gold wire can be used to bond the DFB chip and the housing. The optical fiber and the housing are then welded in a low-temperature vacuum environment. For specific implementation details, please refer to subsequent embodiments. Optionally, the housing described above is a butterfly-shaped housing.

[0065] Furthermore, two-dimensional mechanics is used to align the optical components with the housing. Optionally, a mechanical structure can be used to achieve self-positioning between the optical components and the housing.

[0066] Finally, nitrogen gas is introduced into the tube shell, and the cap is sealed using a parallel seam welding process. Specifically:

[0067] The encapsulation cavity of the tube shell is cleaned with a nitrogen / hydrogen mixed plasma, with a cleaning power of 50-80W and a time of 5-15 seconds, and the internal particle size is controlled to be less than or equal to 0.3μm.

[0068] High-purity nitrogen gas is introduced into the tube shell at a flow rate of 50-100 sccm for 10-20 seconds to stabilize the internal pressure at 1.05-1.1 atm, thus providing anti-oxidation protection.

[0069] Parallel seam welding is used for capping, with an electrode pressure of 80-150gf, a welding current of 30-60A, a welding speed of 2-5mm / s, and a welding temperature of 280-320℃, to ensure that the weld is continuous, without incomplete welds or cracks.

[0070] Furthermore, the finished product undergoes airtightness re-inspection and optical parameter testing. After passing 100 cycles of high and low temperature cycling and 10-2000Hz vibration tests, a DFB laser was successfully fabricated.

[0071] In this embodiment, a non-cooled, passive temperature drift compensation packaging process is adopted, which does not rely on TEC active cooling; the optical fiber and the tube shell are welded in a low-temperature vacuum environment to improve airtightness; the coupling method does not adopt a three-dimensional active peak finding method, but adopts a two-dimensional mechanical method to achieve optical coupling, thereby improving alignment efficiency.

[0072] Optionally, the DFB chip is bonded to the substrate using a non-cooling, passive temperature drift compensation packaging process to obtain an optical component, including:

[0073] Select a substrate;

[0074] The chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss of the substrate are processed;

[0075] The DFB chip is attached to the chip carrier stage of the substrate;

[0076] The DFB chip was optically calibrated.

[0077] The substrate is stress-fixed;

[0078] The optical fiber is fixed in the positioning V-groove of the substrate to obtain the optical component.

[0079] In this embodiment, a zirconia microcrystalline glass composite ceramic substrate can be selected, whose coefficient of thermal expansion is less than or equal to 1. .

[0080] The chip carrier stage, optical path transition stage, positioning V-groove and limiting boss are integrally machined on the substrate.

[0081] The DFB chip is attached to the chip carrier stage of the substrate, and the DFB chip is optically calibrated. Subsequently, the substrate is stress-fixed, and the optical fiber is cured in the positioning V-groove of the substrate, thereby obtaining the optical component. For specific implementation methods of fabricating the optical component, please refer to subsequent embodiments.

[0082] Optionally, the chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss for processing the substrate include:

[0083] A chip carrier stage, an optical path transition stage, a positioning V-groove, and a limiting boss are fabricated on the substrate surface;

[0084] The substrate is subjected to alkaline ultrasonic cleaning, deionized water rinsing, and acid washing;

[0085] The cleaned substrate was dried with nitrogen gas.

[0086] The substrate is subjected to plasma activation treatment.

[0087] In this embodiment, the chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss are integrally fabricated on the substrate. The substrate flatness is ensured to be less than or equal to 0.1 μm, the positioning V-groove spacing accuracy to be ±0.2 μm, and the perpendicularity of each assembly surface to be less than or equal to ±0.01°. The substrate is then subjected to a series of steps: alkaline ultrasonic cleaning for 10 minutes, deionized water rinsing, acid pickling for 5 minutes, dehydration with anhydrous ethanol, and nitrogen drying. Subsequently, plasma activation treatment is performed using an argon / oxygen mixed atmosphere at a power of 80-120W, a chamber pressure of 50-100Pa, and a treatment time of 15-30 seconds, achieving an ISO 3 cleanliness level, free of oil, oxide layer, and particles.

[0088] Optionally, attaching the DFB chip to the chip carrier stage on the substrate includes:

[0089] Conductive silver paste is selected;

[0090] A dispensing machine is used to dispense adhesive into the central area of ​​the chip carrier platform.

[0091] Use a vacuum nozzle to pick up the DFB chip;

[0092] Align the DFB chip with the chip carrier stage so that the DFB chip is attached to the chip carrier stage of the substrate;

[0093] The substrate is subjected to a heating and curing process.

[0094] In this embodiment, a low-modulus, low-shrinkage, high thermal and electrical conductivity silver paste is selected, wherein the elastic modulus of the conductive silver paste is less than or equal to 5 MPa. A high-precision jet dispensing machine is used to dispense the paste onto the central area of ​​the DFB chip carrier platform. Optionally, the paste diameter is 0.3-0.5 mm, and the paste thickness is 8-12 μm, ensuring no bubbles, no breaks, and no overflow. After dispensing, the paste is pre-baked in a 60℃ oven for 5 minutes to allow the paste layer to reach a semi-cured state.

[0095] Use a vacuum nozzle to pick up the DFB chip and align it with the chip carrier stage. After alignment, apply a vertical pressure of 0.08-0.15 MPa to the DFB chip and hold the pressure for 15-30 seconds to ensure that the DFB chip and adhesive layer are evenly bonded, without tilting or voids.

[0096] Furthermore, a three-stage stepped heating and curing process is adopted to avoid the introduction of internal stress by rapid heating:

[0097] The first stage of stepped heating and curing involves holding at 60℃ for 30 minutes to achieve initial shaping.

[0098] The second stage of stepped temperature curing involves holding at 90℃ for 40 minutes for deep curing.

[0099] The third stage of stepped temperature curing involves holding at 120℃ for 30 minutes until fully cured. After curing, the DFB chip adhesion strength is >6MPa, and the shear stress is less than 3MPa.

[0100] Optionally, the optical path calibration of the DFB chip includes:

[0101] The optical path transition stage on the substrate is pre-installed with a mode conversion waveguide and a lens;

[0102] An optical adhesive is applied between the light-emitting surface of the DFB chip and the lens;

[0103] The DFB chip is used for optical path calibration.

[0104] In this embodiment, a mode-spot conversion waveguide and lens are pre-mounted on the optical path transition stage of the substrate to ensure coaxiality with the emitting surface of the DFB chip is less than or equal to ±0.2μm. Optionally, the lens is a passive collimating lens. A 3-5μm thick layer of nano-flexible optical adhesive is coated between the emitting surface of the DFB chip and the lens to form a stress buffer layer, blocking the transmission of packaging stress to the active area of ​​the chip. Finally, the optical path is calibrated at room temperature of 25°C to ensure that the initial coupling loss is less than or equal to 0.25dB, which serves as the temperature drift compensation benchmark.

[0105] Optionally, the stress fixation of the substrate includes:

[0106] Apply epoxy adhesive to the edges of the substrate;

[0107] The substrate is then cured.

[0108] In this embodiment, the inner wall of the tube shell limiting groove is processed to have a roughness of less than or equal to 0.05 μm.

[0109] Furthermore, a three-point micro-dispensing method using low-thermal-stress epoxy adhesive is employed at the edge of the substrate, with each dispensing amount being 0.1-0.2 μL, to avoid full-coverage fixation.

[0110] The substrate is cured by holding it at 80°C for 60 minutes, which allows the substrate to expand and contract slightly within the constraints, thus eliminating thermal mismatch stress.

[0111] In this embodiment, a low thermal expansion composite ceramic substrate, a flexible chip mounting process, an optical path stress buffering process, and a three-point low-stress fixing process for the substrate are selected to achieve... No cooling, no passive, and no wireless broadband degradation.

[0112] Optionally, the step of fixing the optical fiber in the positioning V-groove of the substrate to obtain the optical component includes:

[0113] The optical fiber is placed in the positioning V-groove of the substrate;

[0114] The optical fiber is cured using UV adhesive and thermosetting adhesive to obtain the optical component;

[0115] The optical components are subjected to wide-temperature calibration and passive compensation locking.

[0116] The optical components are placed in a vacuum oven for baking.

[0117] In this embodiment, the optical fiber is placed in the positioning V-groove of the substrate to ensure that the coaxiality between the optical fiber and the chip's light-emitting axis is less than or equal to ±0.5μm, and the gap between the optical fiber end face and the optical path element is controlled at 10-20μm. Optionally, the optical fiber is a Ni / Au metallized optical fiber.

[0118] Use elastic clamps to gently hold the optical fiber, ensuring that the clamping pressure is less than or equal to 0.1 MPa, and avoid rigid compression.

[0119] A dual-curing system using UV adhesive and thermosetting adhesive is employed for positioning. This means that the adhesive is first quickly fixed by UV irradiation, and then cured at a low temperature of 80℃ to prevent relative displacement caused by high temperature.

[0120] Furthermore, the linewidth, output power, and center wavelength were tested at 25°C as reference parameters. The optical components were then placed in a high and low temperature chamber and subjected to sequential testing... Maintain the temperature for 30 minutes, then at 85℃ for 30 minutes, repeating this cycle twice, and monitor the optical path offset. If there is a slight deviation in the optical path offset (this slight deviation can be customized), a micro-angle correction is performed using localized laser heating without altering the structure or components. After correction, maintain the temperature at 100℃ for 20 minutes to complete the final curing, ensuring that the temperature drift coefficient is less than or equal to ±0.02dB / ℃ and the linewidth fluctuation is less than 50Hz.

[0121] Finally, the optical components were placed in a vacuum oven and baked at 85°C and a vacuum of less than or equal to 10 Pa for 24 hours to fully remove the gas and residual stress escaping from the material.

[0122] Optionally, the bonding process between the DFB chip and the casing includes:

[0123] Clean the chip electrodes, transition pads, and lead pins of the DFB chip;

[0124] Following the order of chip electrodes, transition pads, and case pins, gold wire is used to bond the DFB chip to the case.

[0125] In this embodiment, the substrate with the patch installed is inserted into the tube housing positioning fixture, and the clamping force is adjusted to ensure that the parallelism error between the substrate and the tube housing is less than 5μm and the coaxiality error is less than 1μm.

[0126] Argon plasma micro-cleaning is performed on the chip electrodes, transition pads, and lead pins of the DFB chip. The cleaning power is 30-50W and the cleaning time is 3-10 seconds to remove the surface oxide layer and contaminants.

[0127] Ultrasonic thermoforming bonding was performed using 25μm diameter gold wire, sequentially completing the bonding process from chip electrodes, transition pads, to shell leads. The bonding parameters included: ultrasonic power of 80-120mW, pressure of 80-120gf, bonding time of 30-80ms, and hot-stage temperature of 120-150℃.

[0128] After bonding, a tensile test is performed to ensure that the gold wire tensile strength is greater than or equal to 8gf, and the product is inspected by AOI automatic optical inspection to remove defective products such as poor soldering, collapsed wires, short circuits, and broken wires.

[0129] Optionally, the welding of the optical fiber and the tube shell in a low-temperature vacuum environment includes:

[0130] The optical fiber is pretreated, and then chemically plated with nickel or gold.

[0131] The inner wall of the through hole in the tube shell is gold-plated.

[0132] The optical fiber is inserted into the through hole of the tube shell, so that the metal layer of the optical fiber is attached to the metal layer of the through hole;

[0133] The optical fiber and the tube shell are placed in a vacuum furnace for heat preservation, thereby achieving the welding of the optical fiber and the tube shell.

[0134] In this embodiment, the optical fiber undergoes pretreatment, which includes: removing an 8-12 mm length of the coating layer using fiber strippers; wiping the fiber three times with lint-free paper soaked in anhydrous ethanol to ensure no adhesive residue or scratches; immersing the bare fiber in a micro-etching solution for 30-60 seconds at a temperature of 25-35°C to improve surface roughness; and then immersing it in a palladium activating solution for 10-30 seconds to impart chemical plating catalytic activity to the fiber surface.

[0135] The optical fiber is chemically plated with nickel or gold.

[0136] In the chemical nickel plating method for optical fibers, the plating bath temperature is 40-60℃, the pH value is 8.0-9.0, and the time is 10-20 minutes, forming a dense nickel layer of 300-600nm.

[0137] In the chemical gold plating process for optical fibers, the plating bath temperature is 50-70℃, the pH value is 6.0-7.0, and the time is 5-15 minutes, forming a gold layer of 200-400nm. It is ensured that the metal layer is free of pinholes and peeling, and that the adhesion is greater than or equal to 5MPa.

[0138] Gold plating is performed on the inner wall of the through-hole of the shell. The thickness of the gold layer is 100 - 300 nm, which improves the bonding force and conductivity of subsequent diffusion welding.

[0139] Finally, insert the optical fiber into the through-hole of the shell, adjust the position of the optical fiber so that the coaxiality error is less than 1 μm, and the end face of the optical fiber extends 0.5 - 1.0 mm out of the outer wall of the shell. Apply an axial pre-tightening force of 0.1 - 0.3 MPa using a special fixture to make the metal layer of the optical fiber closely fit with the metal layer of the through-hole. Place the optical fiber and the shell into a vacuum furnace, and keep it warm for 30 - 60 minutes under the condition that the vacuum degree is less than or equal to 、the temperature is 150 - 180 °C to complete the Ni / Au interatomic diffusion welding. After welding, helium mass spectrometry leak detection is performed, and the leak rate is less than , and it is determined that the welding is qualified.

[0140] In this embodiment, atomic-level diffusion bonding without solder and glass is achieved at 150 - 180 °C, and a low-temperature vacuum diffusion welding airtight process is realized.

[0141] Optionally, the alignment of the optical component and the shell by using two-dimensional machinery includes:

[0142] Clean the optical component and the shell;

[0143] Through the positioning V-groove and the limiting boss of the substrate in the optical component, use two-dimensional machinery to achieve the alignment of the substrate and the shell;

[0144] Apply UV curable glue at the coupling interface of the substrate and the shell and complete the preliminary curing;

[0145] Perform stepwise curing on the substrate and the shell;

[0146] Fill buffer glue between the DFB chip and the optical fiber and perform curing treatment.

[0147] In this embodiment, argon plasma cleaning is performed on the optical path component and the shell for 3 - 10 seconds to remove micro-particles and organic substances. And calibrate the positioning tooling to ensure that the repeated positioning accuracy of the positioning V-groove is ±0.1 μm.

[0148] Through the positioning V-groove and the limiting boss of the substrate in the optical component, self-positioning is achieved by relying on the mechanical structure. Among them, the pitch and deflection angle errors are less than 0.05°, so that coarse alignment can be completed without active peak searching.

[0149] Apply 0.1-0.3 μL of low-shrinkage UV-curable adhesive to the coupling interface between the substrate and the shell, ensuring no overflow. Irradiate with a UV LED light source for 30-60 seconds to achieve initial fixation, followed by step curing. The step curing method involves holding at 80℃ for 60 minutes and then at 120℃ for 30 minutes to eliminate internal stress in the adhesive.

[0150] A flexible silicone buffer is filled between the DFB chip and the optical fiber. The buffer has a thickness of 0.2-0.5 mm and completely covers the stress concentration area. It is cured at 60-80℃ for 30-60 minutes to form a stress isolation layer.

[0151] In this embodiment, the alignment of the substrate and the shell is achieved through two-dimensional mechanical self-positioning, eliminating the need for active peak finding, thereby reducing coupling loss and improving coupling efficiency.

[0152] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0153] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0154] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A fabrication process for a DFB laser, characterized in that, The method includes: An optical component is obtained by bonding a DFB chip to a substrate using a cooling-free, passive temperature drift compensation packaging process. The DFB chip and the housing are bonded together, and the optical fiber and the housing are welded together in a low-temperature vacuum environment. The optical components are aligned with the tube shell using two-dimensional mechanics; Nitrogen gas was introduced into the tube shell, and the shell was sealed using a parallel seam welding process. After passing the test, the DFB laser was obtained.

2. The method according to claim 1, characterized in that, The aforementioned passive temperature drift compensation packaging process without cooling is used to bond the DFB chip to a substrate to obtain an optical component, including: Select a substrate; The chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss of the substrate are processed; The DFB chip is attached to the chip carrier stage of the substrate; The DFB chip was optically calibrated. The substrate is stress-fixed; The optical fiber is fixed in the positioning V-groove of the substrate to obtain the optical component.

3. The method according to claim 2, characterized in that, The chip carrier stage, optical path transition stage, positioning V-groove, and limiting boss for processing the substrate include: A chip carrier stage, an optical path transition stage, a positioning V-groove, and a limiting boss are fabricated on the substrate surface; The substrate is subjected to alkaline ultrasonic cleaning, deionized water rinsing, and acid washing; The cleaned substrate was dried with nitrogen gas. The substrate is subjected to plasma activation treatment.

4. The method according to claim 2, characterized in that, The step of attaching the DFB chip to the chip carrier stage on the substrate includes: Conductive silver paste is selected; A dispensing machine is used to dispense adhesive into the central area of ​​the chip carrier platform. Use a vacuum nozzle to pick up the DFB chip; Align the DFB chip with the chip carrier stage so that the DFB chip is attached to the chip carrier stage of the substrate; The substrate is subjected to a heating and curing process.

5. The method according to claim 2, characterized in that, The optical path calibration of the DFB chip includes: The optical path transition stage on the substrate is pre-installed with a mode conversion waveguide and a lens; An optical adhesive is applied between the light-emitting surface of the DFB chip and the lens; The DFB chip is used for optical path calibration.

6. The method according to claim 2, characterized in that, The stress fixation of the substrate includes: Apply epoxy adhesive to the edges of the substrate; The substrate is then cured.

7. The method according to claim 2, characterized in that, The process of fixing the optical fiber in the positioning V-groove of the substrate to obtain the optical component includes: The optical fiber is placed in the positioning V-groove of the substrate; The optical fiber is cured using UV adhesive and thermosetting adhesive to obtain the optical component; The optical components are subjected to wide-temperature calibration and passive compensation locking. The optical components are placed in a vacuum oven for baking.

8. The method according to claim 1, characterized in that, The bonding process between the DFB chip and the casing includes: Clean the chip electrodes, transition pads, and lead pins of the DFB chip; Following the order of chip electrodes, transition pads, and case pins, gold wire is used to bond the DFB chip to the case.

9. The method according to claim 1, characterized in that, The welding of the optical fiber and the tube shell in a low-temperature vacuum environment includes: The optical fiber is pretreated, and then chemically plated with nickel or gold. The inner wall of the through hole in the tube shell is gold-plated. The optical fiber is inserted into the through hole of the tube shell, so that the metal layer of the optical fiber is attached to the metal layer of the through hole; The optical fiber and the tube shell are placed in a vacuum furnace for heat preservation, thereby achieving the welding of the optical fiber and the tube shell.

10. The method according to claim 1, characterized in that, The method of aligning the optical component with the housing using two-dimensional mechanics includes: Clean the optical components and the housing; The alignment of the substrate and the tube shell is achieved by using the positioning V-groove and limiting boss of the substrate in the optical component in two-dimensional mechanics. UV-curable adhesive is applied to the coupling interface between the substrate and the shell to complete the initial curing. The substrate and the casing are subjected to step curing; A buffer adhesive is filled between the DFB chip and the optical fiber, and then cured.

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