A rectifier integrated circuit

Abstract

This application discloses a rectifier integrated circuit, relating to the field of power conversion product technology. The circuit is applied to a synchronous rectification branch scenario. The rectifier integrated circuit includes multiple synchronous rectification functional modules arranged in parallel within the same package structure. Each synchronous rectification functional module has multiple external leads connected to the synchronous rectification branch scenario. The multiple synchronous rectification functional modules can execute in parallel and independently. Each synchronous rectification functional module includes a switching transistor and control circuitry. The control circuitry of the multiple synchronous rectification functional modules is disposed on one or more wafers. One or more wafers are packaged within the package structure to form a control circuit wafer area. The control circuitry is used to control the on / off state of the switching transistors in the same synchronous rectification functional module. This application achieves high-efficiency rectification, saves PCB space, reduces packaging and assembly costs, reduces application design difficulty, and promotes product miniaturization through the co-package structure of multiple synchronous rectification functional modules.

Description

Technical Field

[0001] This application relates to the field of power conversion product technology, and in particular to a rectifier integrated circuit. Background Technology

[0002] As power conversion products such as power converters, adapters, and chargers develop towards higher efficiency, lower heat generation, and miniaturization, traditional diode rectification schemes, due to their relatively fixed forward voltage drop, exhibit significant conduction losses and temperature rise under large rectified currents. Synchronous rectification technology replaces diodes with controlled switching transistors. By turning on low-on-resistance switching devices such as MOSFETs under appropriate current direction or voltage conditions, the rectified voltage drop can be reduced and the overall efficiency improved. Currently, extensive research has been conducted on synchronous rectification technology, with related technologies mainly focusing on single-channel synchronous rectification control optimization, single-channel rectification integration, full-bridge rectification topology control, synchronous rectification packaging structure improvement, and high-power rectified power modules. Specifically, publications such as CN121886955A and CN121124574A disclose control schemes such as synchronous rectification threshold detection and adaptive gate drive adjustment, which optimize the single-channel rectification efficiency by optimizing the conduction timing and drive voltage of a single synchronous rectifier transistor. However, the improvements only address the control algorithm and drive strategy for independent single-channel synchronous rectification, without involving the integrated packaging design of multi-channel synchronous rectification functional modules. Public documents such as CN119483287A and CN121602787A disclose single-chip integration of synchronous rectification controllers and switching transistors, as well as power supply secondary function integration schemes, enabling the integration of single-channel synchronous rectification functions and reducing the number of external devices for single-channel rectification. However, these solutions are only applicable to single-channel rectification applications and do not disclose an integrated packaging structure for independently working multi-channel synchronous rectification functional modules, failing to meet the requirements of multiple independent rectification branches for full-wave and full-bridge rectification. Public documents such as CN121813880A and CN121689853A disclose full-bridge synchronous rectification circuits and active bridge control schemes, mainly optimizing the drive logic, phase detection, dead-time control, and operational reliability of the full-bridge topology. However, their improvements are limited to the circuit topology and control method level and do not achieve integrated design of multi-channel synchronous rectification functional modules from the perspective of device packaging. Publications CN218274587U, CN218274586U, and CN218274588U optimize the lead frame, base island structure, and built-in capacitor support structure of synchronous rectifier devices, aiming to improve the packaging stability and structural compactness of single-channel synchronous rectifier devices. However, their optimization targets single-channel rectifier devices and do not disclose the co-package structure of multiple independent synchronous rectifier functional modules. CN220692017U discloses a three-phase full-bridge rectifier MOSFET power module, mainly targeting high-power industrial rectification scenarios, focusing on optimizing the module's structural strength, heat dissipation performance, and parasitic parameters. This type of power module is large in size, high in cost, and has a special packaging form, which does not match the miniaturization and low-cost application requirements of small and medium power consumer power supplies and cannot be directly adapted to the full-wave and full-bridge rectification scenarios of conventional switching power supplies.In summary, existing technologies have the following technical shortcomings: traditional diode rectification suffers from high losses and high temperatures, failing to meet the demands of high-efficiency power supplies; conventional discrete synchronous rectification solutions involve a large number of components, occupy a large PCB area, and have high wiring and assembly complexity and poor consistency; existing single-channel integrated synchronous rectification devices can only achieve single-channel rectification, and multiple devices are still required in full-wave and full-bridge multi-channel rectification scenarios, limiting miniaturization and integration improvements; existing full-bridge synchronous rectification technology only optimizes the circuit control logic and does not solve the integration and packaging problem of multiple rectification channels; high-power rectifier power modules have poor adaptability and high costs, making them unsuitable for small and medium power miniaturized power supply products. Summary of the Invention

[0003] The purpose of this application is to provide a rectifier integrated circuit that integrates multiple synchronous rectification function modules with independent control lines and switching transistors into the same small package device. By using a single chip, it can be applied to synchronous rectification branch scenarios. While retaining the low loss advantage of synchronous rectification, it reduces the number of system components, shrinks the PCB layout area, reduces assembly complexity and production costs, and meets the application requirements of high efficiency, miniaturization and low cost of switching power supplies.

[0004] To achieve the above objectives, this application provides the following solution: This application provides a rectifier integrated circuit, which is applied to a synchronous rectification branch scenario. The rectifier integrated circuit includes: multiple synchronous rectification functional modules; Multiple synchronous rectification function modules are arranged in parallel within the same package structure; Each of the aforementioned synchronous rectification functional modules is provided with multiple external interfaces, and is connected to the synchronous rectification branch scenario through the multiple external interfaces; Multiple synchronous rectification function modules can be executed in parallel or independently. Each of the aforementioned synchronous rectification functional modules includes: a switching transistor and a control circuit; The control circuits of multiple synchronous rectification function modules are disposed on one or more wafers; one or more wafers are packaged in the packaging structure to form the control circuit wafer area; The control circuit is used to control the on / off state of the switching transistors in the same synchronous rectification functional module.

[0005] Optionally, the switching transistor is a controllable power switching device.

[0006] Optionally, the switching transistor is a MOSFET.

[0007] Optionally, the external interfaces include: a VCC interface, a DRAIN interface, and a GND interface.

[0008] Optionally, the control circuit specifically includes: a power supply voltage generator, a bandgap reference source, logic circuits, and a drive circuit; The input terminal of the power supply voltage generator is connected to the output terminal of the bandgap reference source; The output terminal of the power supply voltage generator is connected to the drain of the switching transistor to form a DRAIN interface; The source of the switching transistor is grounded; The output terminal of the logic circuit is connected to the input terminal of the driving circuit; The output terminal of the driving circuit is connected to the gate of the switching transistor; The power supply voltage generator is used to create internal power supply conditions for the control circuit. The bandgap reference source is used to generate a stable reference. The logic circuit is used to generate a switch control logic signal based on the detection result; the detection result is the drain voltage of the switch transistor; the working principle of the logic circuit is to control the switch transistor to turn on when the drain voltage is lower than the turn-on threshold, and to control the switch transistor to turn off when the drain voltage is higher than the turn-off threshold. The driving circuit is used to drive the switching transistor according to the switching control logic signal.

[0009] Optionally, the control circuit further includes: a clamping circuit; One end of the clamping circuit is connected to the input terminal of the power supply voltage generator and the output terminal of the bandgap reference source to form a VCC interface; The other end of the clamping circuit is connected to the source of the switching transistor to form a GND interface; The clamping circuit is used to clamp and protect the relevant nodes.

[0010] Optionally, the number of synchronous rectification function modules is 2; The rectifier integrated circuit is applied in a dual synchronous rectifier branch scenario; The dual synchronous rectifier branch scenario is full-wave rectification.

[0011] Optionally, the packaging structure is SOP7, SOP8, or a compatible package.

[0012] Optionally, the number of synchronous rectification function modules is 4; The rectifier integrated circuit is applied to a four-synchronous rectifier branch scenario; The scenario described above is a full-bridge rectification.

[0013] Optionally, the packaging structure is SOP12, SOP14, SOP16 or a compatible package.

[0014] According to the specific embodiments provided in this application, the following technical effects are disclosed: This application provides a rectifier integrated circuit that employs synchronous rectification functional modules. By replacing the forward voltage drop loss of traditional diodes with the low conduction loss of switching transistors, heat generation can be reduced and overall system efficiency improved. Multiple synchronous rectification functional modules are packaged together into a small-size chip device. Compared to multiple independent synchronous rectification controllers, switching transistors, or single-channel synchronous rectification devices, this reduces PCB component footprint and wiring area, facilitating power supply product miniaturization. With multiple synchronous rectification functional modules centrally packaged, application manufacturers can reduce the number of components purchased, the number of mounting operations, and the complexity of external connections. Simultaneously, packaging resources can be shared by multiple rectifier branches, thereby reducing production costs. This application integrates the control circuitry and switching transistors required for each synchronous rectification functional module within the package. The application side can complete the rectification branch connection simply by connecting the functional pins, reducing the design difficulty of parameter matching, layout and routing, and driver connection for discrete components. Adjusting the number of synchronous rectification functional modules can accommodate multi-rectification path scenarios, resulting in higher system integration compared to single-channel synchronous rectification devices. The package pins can be flexibly defined according to actual application requirements. Multiple control circuits can be manufactured on the same wafer or multiple wafers, facilitating process and cost optimization for different product series. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of a rectifier integrated circuit package according to an embodiment of this application; Figure 2 This is a schematic diagram of the control circuit in one embodiment of this application; Figure 3 This is a schematic diagram of the working process of a rectifier integrated circuit in one embodiment of this application; Figure 4 A schematic diagram of the package of a rectifier integrated circuit with two synchronous rectification function modules in one embodiment of this application; Figure 5 This is a schematic diagram of the package of a rectifier integrated circuit with four synchronous rectification function modules in one embodiment of this application. Detailed Implementation

[0017] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application. To make the above-mentioned objects, features and advantages of this application more apparent and understandable, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0018] In one exemplary embodiment, such as Figure 1 As shown, a rectifier integrated circuit is provided, which is applied to a synchronous rectification branch scenario. The rectifier integrated circuit includes: multiple synchronous rectification functional modules; multiple synchronous rectification functional modules are arranged in parallel within the same package structure; each synchronous rectification functional module is provided with multiple external leads and is connected to the synchronous rectification branch scenario through multiple external leads; multiple synchronous rectification functional modules can execute in parallel and independently; each of the multiple synchronous rectification functional modules includes: a switching transistor and control circuitry; the control circuitry of the multiple synchronous rectification functional modules is disposed on one or more wafers; one or more wafers are packaged within the package structure to form a control circuitry wafer region; the control circuitry is used to control the on / off state of the switching transistors in the same synchronous rectification functional module.

[0019] The switching transistor is a controllable power switching device. Specifically, it is a MOSFET.

[0020] In addition, the external interfaces include: VCC interface, DRAIN interface and GND interface.

[0021] like Figure 2The control circuit specifically includes: a power supply voltage generator (VCC GENERATOR), a bandgap reference source (BANDGAP), a logic circuit (LOGIC), and a driver circuit (DRIVER). The input terminal of the power supply voltage generator is connected to the output terminal of the bandgap reference source; the output terminal of the power supply voltage generator is connected to the drain of the switching transistor, forming a DRAIN interface; the source of the switching transistor is grounded; the output terminal of the logic circuit is connected to the input terminal of the driver circuit; the output terminal of the driver circuit is connected to the gate of the switching transistor; the power supply voltage generator is used to form the internal power supply conditions for the control circuit; the bandgap reference source is used to generate a stable reference; the logic circuit is used to generate switch control logic signals based on the detection results; the detection result is the drain voltage of the switching transistor; the working principle of the logic circuit is to control the switching transistor to turn on when the drain voltage is lower than the turn-on threshold, and to control the switching transistor to turn off when the drain voltage is higher than the turn-off threshold; the driver circuit is used to drive the switching transistor according to the switch control logic signals. The control circuit also includes: a clamping circuit (CLAMP); one end of the clamping circuit is connected to the input terminal of the power supply voltage generator and the output terminal of the bandgap reference source to form a VCC interface; the other end of the clamping circuit is connected to the source of the switching transistor to form a GND interface; the clamping circuit is used to clamp and protect the relevant nodes.

[0022] When the number of synchronous rectification function modules is 2; the rectifier integrated circuit is applied to a dual synchronous rectification branch scenario; the dual synchronous rectification branch scenario is full-wave rectification. The package structure is SOP7, SOP8 or compatible package.

[0023] When the number of synchronous rectification function modules is 4; the rectifier integrated circuit is applied to a four-synchronous rectification branch scenario; the four-synchronous rectification branch scenario is a full-bridge rectification. The package structure is SOP12, SOP14, SOP16 or a compatible package.

[0024] This application provides a rectifier integrated circuit. The integrated circuit includes two or four synchronous rectification (SR) functional modules. Each SR functional module includes control lines and a switching transistor. The control lines detect the drain voltage VDRAIN of the corresponding rectification path and control the switching transistor SW to turn on or off according to preset turn-on threshold Von and turn-off threshold Voff to achieve synchronous rectification. When the integrated circuit includes two SR functional modules, it can be used in applications requiring two synchronous rectification paths, such as full-wave rectification, and can be packaged in SOP7, SOP8, or functionally equivalent small-size packages. When the integrated circuit includes four SR functional modules, it can be used in applications requiring four synchronous rectification paths, such as full-bridge rectification, and can be packaged in SOP12, SOP14, SOP16, or functionally equivalent small-size packages. Multiple SR functional modules are packaged together to form a compact device. The control lines of multiple SR functional modules can typically be fabricated on the same wafer, or they can be fabricated on multiple wafers depending on process, voltage level, heat dissipation, or cost requirements, and then co-packaged with the corresponding switching transistors. Each SR functional module forms an external interface during packaging. The interface needs to be connected to external pins during packaging. In this example, there are three interfaces: VCC, GND, and DRAIN. The SOP package pins can be flexibly defined according to actual application requirements.

[0025] Module Function Description: (1) SR Functional Module The SR functional module is the basic integrated unit of this application. Each SR functional module includes at least a control circuit and a switching transistor. The control circuit detects and judges the DRAIN voltage corresponding to the module, and the switching transistor serves as a low on-resistance switching element in the synchronous rectification channel. Multiple SR functional modules are arranged in parallel within a single package and can respectively undertake the synchronous rectification function of different rectification branches.

[0026] (2) Control circuit The control circuit may include sub-circuits such as VCC GENERATOR, BANDGAP, CLAMP, LOGIC, and DRIVER, used to establish power supply, reference, protection, logic judgment, and driving capabilities. VCC GENERATOR is used to establish internal power supply conditions for the control circuit; BANDGAP is used to generate a stable reference; CLAMP is used to clamp and protect relevant nodes; LOGIC is used to generate switching control logic based on detection results; and DRIVER is used to convert logic signals into driving capabilities suitable for driving switching transistors.

[0027] The core function of the control circuit is to determine synchronous rectification based on the DRAIN (drain) voltage. When the DRAIN voltage is lower than the turn-on threshold Von, the control circuit controls the switch SW to turn on, allowing current to flow through the low-resistance switching path; when the DRAIN voltage is higher than the turn-off threshold Voff, the control circuit controls SW to turn off to avoid reverse current or incorrect conduction.

[0028] In the example, Von can be set to approximately -150mV and Voff can be set to approximately -5mV. The actual thresholds can be designed according to the device process, application voltage, current level, and anti-interference requirements.

[0029] (3) Switching transistor The switching transistor can be a controllable power switching device such as a MOSFET. This switching transistor, together with the corresponding control circuitry, forms a complete SR functional module. Compared to traditional diodes, the switching transistor has a lower equivalent voltage drop during conduction, which helps reduce heat generation and rectification losses.

[0030] (4) External pin area Each SR functional module can form multiple external interfaces. In the example, each module includes three types of interfaces: VCC, GND, and DRAIN. The package pins can be arranged according to the specific topology; for example, two SR functional modules can be arranged in SOP8, and four SR functional modules can be arranged in SOP16. The pin order of SOP8 and SOP16 is not limited to a fixed order and can be flexibly defined according to application requirements, wiring convenience, heat dissipation, and packaging technology.

[0031] (5) Control circuit wafer area The control circuitry for multiple SR functional modules can be fabricated on the same wafer to improve consistency and reduce manufacturing costs; alternatively, it can be fabricated on multiple wafers according to requirements for withstand voltage, heat dissipation, yield, or process compatibility, and then packaged together with the switching transistors in the same chip device. This arrangement allows this application to cover different power levels and package specifications.

[0032] System process as follows Figure 3 As shown, this process is executed independently or in parallel within each SR functional module. In an implementation with two SR functional modules, each module corresponds to one of the two rectifier branches; in an implementation with four SR functional modules, each module corresponds to one of the four synchronous rectifier branches in the full-bridge rectifier. Each module performs switching control based on its own DRAIN voltage, thus adapting to the conduction timing of different branches.

[0033] In one embodiment, the high-efficiency rectifier integrated circuit includes two SR functional modules, SR1 and SR2, packaged in an SOP7, SOP8, or a functionally equivalent small package. Both SR1 and SR2 include control lines and switching transistors, and each forms VCC, GND, DRAIN, and other lead-out interfaces. In the SOP8 embodiment, GND1, VCC1, DRAIN1 and GND2, VCC2, DRAIN2 pins can be arranged on both sides of the package, allowing the two SR functional modules to be connected to corresponding nodes in a full-wave rectification or dual-branch synchronous rectification topology. The pin order can be adjusted according to PCB routing, heat dissipation, and topology connection requirements. By encapsulating two SR functional modules into one device, the application does not need to place two independent synchronous rectification devices on the PCB, thereby saving area and reducing assembly difficulty.

[0034] like Figure 4 Taking two SR functional modules encapsulated in SOP8 as an example: This high-efficiency rectifier integrated circuit comprises two SR functional modules, SR1 and SR2. SR1 includes control line 1 and switch SW1, while SR2 includes control line 2 and switch SW2. The two control lines can be fabricated on the same wafer or on different wafers. SR1 and SR2 form VCC, GND, and DRAIN interfaces, respectively, and are brought out in an SOP8 package. The actual pinouts can be defined as GND1, VCC1, DRAIN1, GND2, VCC2, DRAIN2, etc., depending on the application topology, and unused pins, heat dissipation pins, or multiplexed pins can be reserved. This device can be used in full-wave rectification scenarios requiring two synchronous rectifier branches. During operation, SR1 and SR2 each detect their own DRAIN voltage. When the DRAIN voltage of a module is lower than its turn-on threshold Von, the corresponding SW is turned on; when the DRAIN voltage of a module is higher than its turn-off threshold Voff, the corresponding SW is turned off. The two modules independently control the rectifier branches within the same package.

[0035] In another embodiment, the high-efficiency rectifier integrated circuit includes four SR functional modules SR1, SR2, SR3, and SR4, packaged in SOP12, SOP14, SOP16, or equivalent small-size packages. Each module includes control lines and switching transistors, forming external interfaces such as VCC, GND, and DRAIN. In the SOP16 embodiment, the four SR functional modules can correspond to the four synchronous rectifier branches of a full-bridge rectifier. The package pins may include functional pins such as GND1, VCC1, DRAIN1, GND2, VCC2, DRAIN2, GND3, VCC3, DRAIN3, GND4, VCC4, and DRAIN4. Unused or reused pins can be defined according to actual packaging and application requirements. The co-package of the four modules reduces the number of discrete components and trace lengths in full-bridge synchronous rectification applications, improving product miniaturization.

[0036] like Figure 5 Taking two SR functional modules encapsulated in SOP8 as an example: The high-efficiency rectifier integrated circuit includes four SR functional modules: SR1, SR2, SR3, and SR4. These four modules correspond to the four synchronous rectifier branches in a full-bridge rectifier. Each module includes control circuitry and a switching transistor, and forms VCC, GND, and DRAIN interfaces respectively. The SOP16 package pinout can be arranged according to the full-bridge topology as GND1, VCC1, DRAIN1, GND2, VCC2, DRAIN2, GND3, VCC3, DRAIN3, GND4, VCC4, and DRAIN4 functional pins, and some pins can be reserved for heat dissipation, multiplexing, unused pins, or internal connections depending on the actual application. Because the four synchronous rectifier functional modules form a complete device within one package, the application can use a single chip to replace multiple single-channel synchronous rectifier devices, thereby reducing PCB area and assembly steps.

[0037] Manufacturing and Packaging of Control Circuits: Control circuits for multiple SR functional modules can be manufactured on the same wafer, meaning multiple control circuit units are formed on a single wafer and then connected to the corresponding switching transistors during the packaging stage. This method helps improve the consistency of threshold values ​​and control timing among multiple modules. In another embodiment, multiple control circuits can also be manufactured on multiple wafers and then packaged together in the same device. This method can be used when different channels require different processes, different voltage ratings, different heat dissipation paths, or higher yield options. Regardless of whether a single-wafer or multi-wafer approach is used, the final package forms a small-size, high-efficiency rectifier integrated circuit containing two or four SR functional modules.

[0038] The turn-on threshold Von for each SR functional module is set to approximately -150mV, and the turn-off threshold Voff is set to approximately -5mV. When the DRAIN voltage is below approximately -150mV, the control circuit determines that the rectifier branch should enter the conduction state and turns on SW; when the DRAIN voltage is above approximately -5mV, the control circuit determines that the rectifier branch should exit the conduction state and turns off SW. The above values ​​are only used to illustrate the control logic and are not intended to limit the scope of protection of the claims.

[0039] Key technical parameters: (1) Number of SR functional modules: N=2 or N=4.

[0040] When N=2, it is suitable for scenarios with dual synchronous rectifier branches such as full-wave rectifier; when N=4, it is suitable for scenarios with four synchronous rectifier branches such as full-bridge rectifier.

[0041] (2) Package type: When N=2, SOP7, SOP8 or compatible packages can be used; when N=4, SOP12, SOP14, SOP16 or compatible packages can be used. The specific number of package pins can be adjusted according to whether the power supply pin, ground pin or reserved pin is combined.

[0042] (3) Individual SR functional module interface: Each module can have VCC, GND, DRAIN and other interfaces. According to the packaging and application requirements, similar pins can be brought out independently, brought out together or reused.

[0043] (4) Turn-on conditions: When the corresponding module detects that the DRAIN voltage is lower than the turn-on threshold Von, the control circuit drives the corresponding SW to turn on. Example Von can be about -150mV, and the actual value can be set according to the process and application conditions.

[0044] (5) Shutdown condition: When the corresponding module detects that the DRAIN voltage is higher than the shutdown threshold Voff, the control line drives the corresponding SW to shut down. Example Voff can be about -5mV, and the actual value can be set according to the requirements of reverse current suppression, conduction loss and noise immunity.

[0045] (6) Control circuit sub-module: The control circuit may include sub-circuits such as VCCGENERATOR, BANDGAP, CLAMP, LOGIC, DRIVER, etc., and may also add undervoltage protection, overvoltage clamping, dead zone control or anti-ringing judgment circuits according to the application.

[0046] (7) Manufacturing method: Multiple control circuits can be located on the same wafer or multiple wafers; the switching transistors can be packaged together with the control circuits to form a complete SR functional module.

[0047] The following alternatives exist for this application: (1) The packaging form can be replaced. In addition to being packaged in SOP7 and SOP8, the two SR functional modules can also be packaged in SSOP, TSSOP, DFN, QFN, PDFN or other equivalent small-size packages, depending on the number of pins, heat dissipation capacity and application space requirements; in addition to being packaged in SOP12, SOP14 and SOP16, the four SR functional modules can also be packaged in QFN, TSSOP, PDFN, multi-chip module packages or other packaging forms with sufficient pins and heat dissipation capacity. As long as multiple SR functional modules can be packaged together and the functional terminals such as VCC, GND, and DRAIN can be reliably brought out, the purpose of this application can be achieved.

[0048] (2) The manufacturing method of the control circuit can be replaced. The control circuits of multiple SR functional modules can be manufactured on the same wafer, or they can be manufactured on multiple wafers and then packaged together; or the high voltage detection part, low voltage logic control part, and drive part can be set on different bare dies and then packaged together with the corresponding switching transistors. All of the above methods can realize the centralized packaging and control of multiple synchronous rectification channels.

[0049] (3) Switch type can be replaced. The switch in each SR functional module can be a MOSFET, or, depending on the application voltage, current, on-resistance, switching speed and cost requirements, a low on-resistance power MOSFET, trench MOSFET, PMOS / NMOS combination device, or other controllable power switching devices that can be driven by the control circuit and realize synchronous rectification function.

[0050] (4) Pin definition methods can be replaced. The VCC, GND, DRAIN, and other pins of each SR functional module can be brought out independently, or some VCC or GND pins can be shared, merged, reused, or reserved according to actual application requirements. The arrangement order of package pins can also be adjusted according to PCB routing, heat dissipation, packaging process, or full-wave / full-bridge topology connection requirements.

[0051] (5) The turn-on and turn-off judgment methods can be replaced. The control circuit can control the turn-on and turn-off of SW by comparing the DRAIN voltage with the Von and Voff thresholds, or it can use drain-source voltage detection, current detection, hysteresis comparison, adaptive threshold, gate voltage adjustment, or a combination of the above methods to determine the turn-on and turn-off timing of the synchronous rectifier. As long as the switching transistor can be turned on during the forward conduction phase and turned off during the reverse or non-conducting phase, the purpose of synchronous rectification can be achieved.

[0052] (6) Module integration is an alternative. Two or four SR functional modules can be packaged as independent units, or they can be implemented using a common control die combined with multiple switching dies, or multiple single-channel SR dies can be co-packaged. All of the above methods can form a compact device containing multiple synchronous rectification channels. In summary, the above alternative solutions can all achieve the goals of high-efficiency rectification, reduced heat generation, reduced number of devices, and PCB space saving to varying degrees, but the preferred solution is still to package two or four SR functional modules containing control lines and switching transistors together in a small integrated circuit.

[0053] Compared to traditional diode rectification, this application reduces conduction losses, heat generation, and improves efficiency by using synchronous rectification switching transistors. Compared to discrete synchronous rectification controllers and external MOSFET combinations, this application reduces the number of devices, packages, and PCB trace area. Compared to using multiple single-channel synchronous rectification devices side-by-side, this application further improves integration and reduces application design complexity by co-packaging two or four SR functional modules.

[0054] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A rectifier integrated circuit, characterized by comprising: The rectifier integrated circuit is applied to a synchronous rectification branch scenario, and the rectifier integrated circuit includes: multiple synchronous rectification functional modules; Multiple synchronous rectification function modules are arranged in parallel within the same package structure; Each of the aforementioned synchronous rectification functional modules is provided with multiple external interfaces, and is connected to the synchronous rectification branch scenario through the multiple external interfaces; Multiple synchronous rectification function modules can be executed in parallel or independently. Each of the aforementioned synchronous rectification functional modules includes: a switching transistor and a control circuit; The control circuits of multiple synchronous rectification function modules are disposed on one or more wafers; one or more wafers are packaged in the packaging structure to form the control circuit wafer area; The control circuit is used to control the on / off state of the switching transistors in the same synchronous rectification functional module.

2. The rectifier integrated circuit according to claim 1, wherein The switching transistor is a controllable power switching device.

3. The rectifier integrated circuit according to claim 2, wherein The switching transistor is a MOSFET.

4. The rectifier integrated circuit according to claim 1, wherein The external interfaces include: VCC interface, DRAIN interface and GND interface.

5. The rectifier integrated circuit according to claim 4, wherein The control circuit specifically includes: a power supply voltage generator, a bandgap reference source, logic circuits, and a drive circuit; The input terminal of the power supply voltage generator is connected to the output terminal of the bandgap reference source; The output terminal of the power supply voltage generator is connected to the drain of the switching transistor to form a DRAIN interface; The source of the switching transistor is grounded; The output terminal of the logic circuit is connected to the input terminal of the driving circuit; The output terminal of the driving circuit is connected to the gate of the switching transistor; The power supply voltage generator is used to create internal power supply conditions for the control circuit; The bandgap reference source is used to generate a stable reference. The logic circuit is used to generate a switch control logic signal based on the detection result; the detection result is the drain voltage of the switch transistor; the working principle of the logic circuit is to control the switch transistor to turn on when the drain voltage is lower than the turn-on threshold, and to control the switch transistor to turn off when the drain voltage is higher than the turn-off threshold. The driving circuit is used to drive the switching transistor according to the switching control logic signal.

6. The rectifier integrated circuit according to claim 5, wherein The control circuit also includes: a clamping circuit; One end of the clamping circuit is connected to the input terminal of the power supply voltage generator and the output terminal of the bandgap reference source to form a VCC interface; The other end of the clamping circuit is connected to the source of the switching transistor to form a GND interface; The clamping circuit is used to clamp and protect the relevant nodes.

7. The rectifier integrated circuit according to claim 1, characterized in that, The number of synchronous rectification function modules is 2; The rectifier integrated circuit is applied in a dual synchronous rectifier branch scenario; The dual synchronous rectifier branch scenario is full-wave rectification.

8. The rectifier integrated circuit according to claim 7, wherein The packaging structure is SOP7, SOP8 or a compatible package.

9. The rectifier integrated circuit according to claim 1, wherein The number of synchronous rectification function modules is 4; The rectifier integrated circuit is applied to a four-synchronous rectifier branch scenario; The scenario described above is a full-bridge rectification.

10. The rectifier integrated circuit according to claim 9, wherein The packaging structure is SOP12, SOP14, SOP16 or a compatible package.

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