X-band high-power high-efficiency rectifier circuit and method

Abstract

This invention provides a high-power, high-efficiency rectifier circuit and method in the X-band. By employing a microstrip harmonic suppression network and three open-circuit stubs to suppress the fundamental, second, and third harmonics, parasitic losses are reduced, and rectification efficiency is improved. GaN diodes are selected for performance optimization. Harmonic balance simulation analysis of diode characteristics enhances conversion efficiency. Single-stub matching technology improves circuit input impedance matching and reduces energy reflection. ADS field-circuit co-simulation analysis of the microstrip line coupling effect improves rectification efficiency within the input range, demonstrating broadband performance and realizing the energy conversion function of a high-frequency rectifier circuit. This achieves multiple breakthroughs in power capacity, frequency adaptability, and conversion efficiency. It avoids congested mobile communication frequency bands, providing a cleaner electromagnetic environment for the system.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic applications and microwave technology, specifically relating to an X-band high-power high-efficiency rectifier circuit and method. Background Technology

[0002] The development of traditional wireless power transfer rectifier circuits has long been limited by the overlap between their operating frequency bands and those of communication systems. Early rectifier circuits were mostly designed in the S-band (2-4 GHz) and C-band (4-8 GHz) frequency ranges, which coincide significantly with modern mobile communication systems (such as the Sub-6 GHz band of 4G / 5G), leading to serious electromagnetic compatibility problems in practical applications. This frequency conflict not only causes signal interference, affecting communication quality, but also forces the system to add additional filtering modules to suppress interference, thereby increasing circuit complexity and manufacturing costs. More importantly, this frequency limitation greatly restricts the application potential of rectifier circuits in dense communication environments (such as urban centers and industrial parks), making it difficult to widely promote technologies such as microwave wireless power transfer.

[0003] Traditional rectifier circuits have significant limitations in power handling capabilities. Their typical input power is usually below 30 dBm (approximately 1 watt), a power level that is insufficient to meet the high-power energy transfer requirements of modern industrial applications, such as long-distance wireless charging and power supply for industrial sensor networks. When the input power reaches higher levels, the inherent nonlinear characteristics of the rectifier diodes become more pronounced, leading to a sharp drop in energy conversion efficiency. Real-world measurement data shows that traditional circuits can experience efficiency fluctuations exceeding 20% ​​within a power fluctuation range of ±5 dBm. This instability severely restricts their reliability in real-time applications. Furthermore, the traditional λ / 4 microstrip line pass-through filter structure exhibits significant parasitic effects; its limited bandwidth makes it difficult to effectively suppress high-order harmonics, resulting in considerable energy loss, with typical efficiencies often below 50%.

[0004] Furthermore, traditional designs are sensitive to changes in the operating environment. The circuit's performance is highly dependent on a fixed operating frequency and load conditions. Even slight frequency shifts or load changes can easily lead to impedance mismatch, resulting in a deterioration in the reflection coefficient (typically exceeding -5 dB). This sensitivity makes traditional rectifier circuits difficult to adapt to complex real-world application environments and limits their applicability in different scenarios. Narrowband characteristics are another significant drawback; the effective operating bandwidth of traditional designs is typically less than 1 GHz, failing to cover a wider frequency range, which is particularly inadequate in modern wireless systems requiring frequency adaptability. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide an X-band high-power high-efficiency rectifier circuit and method for energy conversion in high-frequency rectifier circuits.

[0006] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows: 1. An X-band high-power high-efficiency rectifier circuit, including a multi-stub microstrip harmonic suppression network, including a cross microstrip line, a T-junction and a microstrip line connected in series between two terminals, and an open-circuit microstrip line connected to the cross microstrip line or the T-junction.

[0007] According to the above scheme, the multi-segment microstrip harmonic suppression network includes a three-segment open-circuit structure with electrical lengths of λ / 4, λ / 8, and λ / 12, which are used to suppress the fundamental, second, and third harmonics, respectively.

[0008] According to the above scheme, a rectifier diode based on GaN material is used, and the nonlinear characteristics of the diode are analyzed through harmonic balance simulation to optimize the operating point; The circuit is impedance matched using a single stub matching technique. The coupling effect of microstrip lines is analyzed using a field-circuit co-simulation method; Optimize load adaptability and frequency range to ensure circuit stability and efficiency in different scenarios.

[0009] A high-power, high-efficiency rectification method for the X-band includes the following steps: S1: Design and optimization of harmonic suppression networks; S2: Integrated GaN diode with impedance matching; S3: Perform field-path joint simulation and verify performance; S4: Implement process and calibration testing; S5: Optimize iterations and verify reliability.

[0010] Furthermore, in step S1, the specific steps are as follows: S11: A through filter based on a microstrip line structure is designed as the core module for harmonic suppression; a three-stub open-circuit structure is adopted, and the characteristic impedance is controlled by adjusting the stub width; electromagnetic simulation software is used to analyze the coupling effect between stubs and optimize the stub spacing to reduce parasitic resonance. S12: Verify the filter performance through harmonic balance simulation; if harmonic suppression is insufficient, fine-tune the stub length or add grounding vias to improve the Q value.

[0011] Furthermore, in step S2, the specific steps are as follows: Select a GaN Schottky diode; extract the diode's nonlinear model through large-signal S-parameter simulation, and determine the optimal operating point impedance at a 35 dBm input. The matching network adopts a single-stub microstrip line structure, optimizes the stub position and length, and transforms the diode impedance to a 50Ω system impedance. After matching, the reflection coefficient is scanned within a certain range to ensure that it is lower than the preset value across the entire frequency band. If the high-frequency matching is not good, a stub is connected in parallel to compensate for the capacitive component.

[0012] Furthermore, in step S3, the specific steps are as follows: A field-circuit co-simulation platform was built to jointly solve the electromagnetic models of the harmonic suppression network, diodes, and matching network with the circuit model; the sweep frequency range, input power gradient, step size, and load resistance sweep range were set.

[0013] Furthermore, in step S4, the specific steps are as follows: A substrate with a characteristic impedance of 50 Ω was achieved by selecting a substrate and setting the microstrip linewidth. The system was calibrated to the probe end face using a vector network analyzer. The actual S-parameters of the GaN diode were measured and compared with the simulation. If the measured efficiency was lower than the simulation value, the following checks were performed in sequence: if the diode soldering was faulty and caused heat loss, it was re-soldered; if the frequency shift was caused by the substrate dielectric constant tolerance, the board was remade; if the stub processing error caused harmonic suppression degradation, the stub was replaced.

[0014] Furthermore, in step S5, the specific steps are as follows: Based on test data, reverse optimization is performed. If the efficiency drops at a specific frequency, the stub length is fine-tuned using the ADS parameter tuning function. If the power capacity is insufficient, a diode is connected in parallel to share the current. Finally, the efficiency stability of the circuit under extreme environments is verified through high and low temperature cycling tests.

[0015] A computer memory storing a computer program executable by a computer processor, the computer program performing an X-band high-power, high-efficiency rectification method.

[0016] The beneficial effects of this invention are as follows: 1. This invention provides an X-band high-power, high-efficiency rectifier circuit and method. By replacing the traditional λ / 4 microstrip line with a capacitor structure with a microstrip harmonic suppression network, it suppresses the fundamental, second, and third harmonics through three open-circuit stubs (lengths λ / 4, λ / 8, and λ / 12, respectively), reducing parasitic losses and improving rectification efficiency. GaN diodes are selected for performance optimization. GaN-based diodes have high reverse breakdown voltage and are suitable for high-power input (0-40dBm). By analyzing the diode characteristics through harmonic balance simulation, the conversion efficiency reached 43.3% at a 40dBm input, and increased to 74.2% after adding a pass-through filter. By employing single-stub matching technology (such as the DA_SSMatch control) to match the circuit input impedance to 50Ω, the reflection coefficient was below -10dB in the 25-40dBm input range, significantly reducing energy reflection. By analyzing the microstrip line coupling effect through ADS field-circuit co-simulation, the rectification efficiency was greater than 60% in the 33-40dBm input range, and reached 68.4% at a load of 77Ω. The efficiency was higher than 60% in the 7.6-10.2GHz frequency range, demonstrating broadband performance and realizing the energy conversion function of the high-frequency rectifier circuit.

[0017] 2. This invention achieves multiple breakthroughs in power capacity, frequency adaptability, and conversion efficiency. With the increasing demand for wireless power supply, this high-performance rectifier circuit is expected to play a significant role in industrial automation, power supply for IoT devices, and remote monitoring systems, driving related technologies towards greater efficiency and reliability.

[0018] 3. This invention shifts the operating frequency band to the X-band (7.6-10.2 GHz), avoiding congested mobile communication frequency bands and providing a cleaner electromagnetic environment for the system. The X-band not only has more abundant spectrum resources but also supports a wider operating bandwidth, enabling circuit design to break through traditional narrowband limitations and achieve superior frequency adaptability.

[0019] 4. This invention solves the problems of frequency band conflict between rectifier circuit and communication frequency band, narrow bandwidth of traditional through-pass filter, large parasitic loss, and low efficiency caused by harmonic energy loss due to diode nonlinearity.

[0020] Of course, any product implementing this invention does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a diagram of the harmonic suppression network structure according to an embodiment of the present invention.

[0023] In the diagram: 1. Port 1; 2. Microstrip open transmission line 1; 3. Microstrip cross branch line; 4. Microstrip open transmission line 2; 5. Microstrip T-junction; 6. Microstrip open transmission line 3; 7. Microstrip line; 8. Port 2.

[0024] Figure 2 This is a simulation result diagram of the through filter according to an embodiment of the present invention.

[0025] Figure 3 This is a schematic diagram of the field-circuit joint simulation of the rectifier circuit according to an embodiment of the present invention.

[0026] In the diagram: 1. Microstrip open-circuit transmission line 1; 2. Microstrip cross branch line; 3. Microstrip open-circuit transmission line 2; 4. Microstrip line; 5. Microstrip T-junction; 6. Microstrip open-circuit transmission line 3; 7. Microstrip line.

[0027] Figure 4 This is a graph showing the relationship between efficiency and load / frequency in an embodiment of the present invention. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0029] Example 1 See Figure 1 A high-power, high-efficiency rectifier circuit for the X-band has the following characteristics: (1) Innovative DC filter design In terms of circuit structure, this embodiment abandons the traditional λ / 4 microstrip line with capacitor filter design and innovatively adopts a multi-stub microstrip harmonic suppression network. Through a carefully designed three-stub structure (lengths of λ / 4, λ / 8, and λ / 12 respectively), effective suppression of the fundamental, second, and third harmonics is achieved. This design not only significantly reduces parasitic losses but also improves the rectification efficiency from the baseline level of 43.3% to 74.2% at a 40 dBm input. Combined with single-stub impedance matching technology, the circuit maintains good impedance matching across a wide power range of 25-40 dBm, with the reflection coefficient consistently below -10 dB, ensuring efficient energy transfer.

[0030] (2) GaN diode optimization and nonlinear characteristic management In terms of component selection, this embodiment uses a rectifier diode based on GaN (gallium nitride) material. Its high reverse breakdown voltage characteristic enables the circuit to support a wide power input range of 0-40 dBm, greatly improving power handling capability. Through harmonic balance simulation analysis of the diode's nonlinear characteristics and optimization of the operating point, the efficiency was improved from 43.3% to 74.2% at a 40 dBm input.

[0031] (3) Impedance matching network design The circuit input impedance is precisely matched to 50Ω using single-stub matching technology.

[0032] Within the 25-40dBm input range, the reflection coefficient is below -10dB, minimizing energy reflection and improving power transmission stability.

[0033] (4) Field-circuit joint simulation and broadband performance verification To verify the reliability of the design, an advanced field-circuit co-simulation method was employed, and the microstrip line coupling effect was precisely analyzed using ADS software. Simulation results show that the rectifier circuit maintains a conversion efficiency of over 60% within an input power range of 33-40 dBm, with a peak efficiency of 68.4% under a 77Ω load. More notably, the circuit maintains an efficiency above 60% across a wide frequency range of 7.6-10.2 GHz, demonstrating excellent broadband characteristics.

[0034] (5) Load and frequency robustness design By optimizing load adaptability and frequency range, the stability and efficiency of the circuit are ensured in different scenarios.

[0035] Example 2 The steps in this embodiment are the same as in Embodiment 1, except that each step is applied to a specific instance. Specifically, it includes the following steps: Step 1: Design and Optimization of Harmonic Suppression Network First, a pass-through filter based on a microstrip line structure is designed as the core module for harmonic suppression. A three-stub open-circuit structure is adopted, with the electrical lengths of each stub set to λ / 4, λ / 8, and λ / 12, respectively. The characteristic impedance is controlled by adjusting the stub width. During the design process, electromagnetic simulation software is used to analyze the coupling effect between stubs, and the stub spacing is optimized to within 0.1λ to reduce parasitic resonances.

[0036] Subsequently, the filter performance was verified through harmonic balance simulation: at a fundamental frequency of 7.6 GHz, the second harmonic suppression needs to be better than 25 dB, and the third harmonic suppression needs to be better than 30 dB. If the harmonic suppression is insufficient, the stub length (±5%λ) can be fine-tuned or grounding vias can be added to improve the Q value.

[0037] Step 2: GaN Diode Integration and Impedance Matching A GaN Schottky diode with a reverse breakdown voltage ≥100 V was selected, suitable for 40 dBm input power. The diode's nonlinear model was extracted through large-signal S-parameter simulation, and the optimal operating point impedance was determined to be 19.655 + j5.607 Ω at a 35 dBm input.

[0038] The matching network employs a single-stub microstrip line structure, using the DA_SSMatch control to optimize stub position and length, transforming the diode impedance to a 50 Ω system impedance. After matching, the reflection coefficient needs to be scanned within the 25-40 dBm range to ensure it remains below -10 dB across the entire frequency band. If the high-frequency matching is poor, a stub can be connected in parallel to compensate for the capacitive component.

[0039] Step 3: Field-Circuit Joint Simulation and Performance Verification A field-circuit co-simulation platform was built in ADS: the electromagnetic models of the harmonic suppression network, diodes, and matching network were solved together with the circuit model. The sweep frequency range was set to 7-12 GHz, the input power gradient was set to 5 dBm steps, and the load resistance sweep range was set to 50-100 Ω.

[0040] Step 4: Process Implementation and Testing / Calibration The Rogers 4350B substrate was selected for PCB fabrication, with a microstrip linewidth of 1.2 mm to achieve a characteristic impedance of 50 Ω. After soldering the GaN diodes, a vector network analyzer was used to calibrate the system to the probe end face, and the actual S-parameters were measured and compared with the simulation.

[0041] If the measured efficiency is lower than the simulated value, check the following in order: heat loss caused by poor soldering of diodes; frequency shift caused by substrate dielectric constant tolerance; and harmonic suppression degradation caused by stub processing errors.

[0042] Step 5: Optimization Iteration and Reliability Verification The design was optimized based on test data: if efficiency drops at a specific frequency, the stub length can be fine-tuned using the ADS parameter tuning function; if the power capacity is insufficient, diodes can be connected in parallel to share the current. Finally, the efficiency stability of the circuit under extreme environments was verified through high and low temperature cycling tests, requiring a temperature drift of less than 3%.

[0043] This embodiment ensures that the circuit performance reaches international advanced levels through a closed-loop process encompassing design, simulation, PCB fabrication, and testing. All simulation and test data must be archived and saved for future productization reference.

[0044] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0045] It should be noted that, depending on the implementation needs, the various steps / components described in this application can be broken down into more steps / components, or two or more steps / components or parts of the operation of steps / components can be combined into new steps / components to achieve the purpose of this invention.

[0046] This embodiment also includes a processor, a communication interface, a memory, and a communication bus; wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; the memory stores a computer program, and when the program is executed by the processor, the processor performs the steps of an X-band high-power high-efficiency rectification method.

[0047] This embodiment also provides a computer-readable storage medium storing executable instructions that, when executed by a processor, enable the processor to implement an X-band high-power, high-efficiency rectification method.

[0048] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects.

[0049] Furthermore, this application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0050] This application is described with reference to the flowchart of the method and computer program product according to Embodiment 1 and the block diagram of the device (system) according to Embodiment 3. It should be understood that each step or block in the flowchart or block diagram, as well as combinations of steps or blocks in the flowchart or block diagram, can be implemented by computer program instructions.

[0051] These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing device to produce a machine, such that the instructions, which are executable by the processor of the computer or other programmable data processing device, produce instructions for implementing the process. Figure 1 One or more processes or boxes Figure 1 An X-band high-power, high-efficiency rectifier circuit that specifies the functions in one or more boxes.

[0052] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes or boxes Figure 1The function specified in one or more boxes.

[0053] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes or boxes Figure 1 The steps of an X-band high-power, high-efficiency rectification method are specified in one or more boxes.

[0054] The above embodiments are only used to illustrate the design concept and features of the present invention, and their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. The protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes or modifications made based on the principles and design ideas disclosed in the present invention are within the protection scope of the present invention.

Claims

1. A high-power, high-efficiency rectifier circuit for the X-band, characterized in that: It includes a multi-strip harmonic suppression network, comprising a cross microstrip line, a T-junction and a microstrip line connected in series between two terminals, and an open-circuit microstrip line connected to the cross microstrip line or the T-junction.

2. The X-band high-power high-efficiency rectifier circuit according to claim 1, characterized in that: The multi-segment microstrip harmonic suppression network includes three-segment open-circuit structures with electrical lengths of λ / 4, λ / 8, and λ / 12, which are used to suppress the fundamental, second, and third harmonics, respectively.

3. The X-band high-power high-efficiency rectifier circuit according to claim 1, characterized in that: A GaN-based rectifier diode was used, and its nonlinear characteristics were analyzed through harmonic balance simulation to optimize the operating point. The circuit is impedance matched using a single stub matching technique. The coupling effect of microstrip lines is analyzed using a field-circuit co-simulation method; Optimize load adaptability and frequency range to ensure circuit stability and efficiency in different scenarios.

4. An X-band high-power high-efficiency rectifying method based on the X-band high-power high-efficiency rectifying circuit according to any one of claims 1 to 3, characterized in that: Includes the following steps: S1: Design and optimization of harmonic suppression networks; S2: Integrated GaN diode with impedance matching; S3: Perform field-path joint simulation and verify performance; S4: Implement process and calibration testing; S5: Optimize iterations and verify reliability.

5. The method of claim 4, wherein: The specific steps in step S1 are as follows: S11: A through filter based on a microstrip line structure is designed as the core module for harmonic suppression; a three-stub open-circuit structure is adopted, and the characteristic impedance is controlled by adjusting the stub width; electromagnetic simulation software is used to analyze the coupling effect between stubs and optimize the stub spacing to reduce parasitic resonance. S12: Verify the filter performance through harmonic balance simulation; if harmonic suppression is insufficient, fine-tune the stub length or add grounding vias to improve the Q value.

6. The method of claim 4, wherein: The specific steps in step S2 are as follows: Select a GaN Schottky diode; extract the diode's nonlinear model through large-signal S-parameter simulation, and determine the optimal operating point impedance at a 35 dBm input. The matching network adopts a single-stub microstrip line structure, optimizes the stub position and length, and transforms the diode impedance to a 50 Ω system impedance. After matching, the reflection coefficient is scanned within a certain range to ensure that it is lower than the preset value across the entire frequency band. If the high-frequency matching is not good, a short stub is connected in parallel to compensate for the capacitive component.

7. The method of claim 4, wherein the X-band high power high efficiency rectifier is characterized by: The specific steps in step S3 are as follows: A field-circuit co-simulation platform was built to jointly solve the electromagnetic models of the harmonic suppression network, diodes, and matching network with the circuit model; the sweep frequency range, input power gradient, step size, and load resistance sweep range were set.

8. The X-band high-power high-efficiency rectification method according to claim 4, characterized in that: The specific steps in step S4 are as follows: A substrate with a characteristic impedance of 50 Ω was achieved by selecting a substrate and setting the microstrip linewidth. The system was calibrated to the probe end face using a vector network analyzer. The actual S-parameters of the GaN diode were measured and compared with the simulation. If the measured efficiency was lower than the simulation value, the following checks were performed in sequence: if the diode soldering was faulty and caused heat loss, it was re-soldered; if the frequency shift was caused by the substrate dielectric constant tolerance, the board was remade; if the stub processing error caused harmonic suppression degradation, the stub was replaced.

9. The method of claim 4, wherein: The specific steps in step S5 are as follows: Based on test data, reverse optimization is performed. If the efficiency drops at a specific frequency, the stub length is fine-tuned using the ADS parameter tuning function. If the power capacity is insufficient, a diode is connected in parallel to share the current. Finally, the efficiency stability of the circuit under extreme environments is verified through high and low temperature cycling tests.

10. A computer memory, characterized by: It contains a computer program that can be executed by a computer processor, which performs an X-band high-power high-efficiency rectification method as described in any one of claims 4 to 9.

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