Nv color center array addressing apparatus and method

Abstract

This invention relates to an addressing device and method for NV color center arrays. The device includes an optical field localization array and a microwave control array. The optical field localization array includes multiple optical antenna elements corresponding to the NV color centers in the array. These optical antenna elements are configured to localize the incident light field into a local electric field to excite the target NV color centers and collect the fluorescence signals emitted by them. The microwave control array includes multiple microwave antenna elements corresponding to the NV color centers in the array. These microwave antenna elements are configured to apply a near-field microwave magnetic field to the target NV color centers to manipulate their spin states. This invention overcomes the diffraction limit through near-field optical localization and achieves spatial isolation through a near-field microwave magnetic field, solving the problems of limited optical resolution and microwave crosstalk in independent addressing of high-density NV color center arrays.

Description

Technical Field

[0001] This invention relates to the field of quantum information technology, and in particular to an NV color center array addressing device and method. Background Technology

[0002] In the fields of solid-state quantum computing and quantum sensing, diamond nitrogen-vacancy (NV) centers show promising application prospects due to their long coherence time at room temperature and optical readability. NV-center-based quantum computing devices primarily utilize magnetic dipole-dipole interactions to achieve coupling between qubits. Since the strength of the magnetic dipole-dipole interaction varies with distance... by The amplitude attenuation. Therefore, to achieve effective coupling, a large number of NV color centers need to be densely arranged with nanometer-level spacing to control the spacing between NV color centers within a small range.

[0003] However, in dense arrays, independent addressing of individual NV centers faces two major physical obstacles: First, traditional optical addressing is limited by the optical diffraction limit, with a spatial resolution typically around half the excitation wavelength. This makes it impossible to distinguish adjacent NV centers with spacing less than 100 nanometers or even reaching 30 nanometers, resulting in severe spatial crosstalk between optical excitation and fluorescence collection. Second, the wavelength of the microwave signal used for spin state manipulation is much larger than the physical size of the NV center array. Under far-field microwave radiation, all NV centers in the array experience almost the same microwave field strength, making selective manipulation of individual target NV centers difficult. Furthermore, electromagnetic coupling crosstalk easily occurs between adjacent microwave control units, severely reducing the fidelity of quantum logic gates. Therefore, a technical solution that can overcome the optical diffraction limit and effectively suppress microwave crosstalk is urgently needed to achieve crosstalk-free independent addressing of nanometer-spacing NV center arrays.

[0004] There is currently no effective solution to the problem that high-density NV color center arrays are difficult to achieve crosstalk-free independent addressing due to optical diffraction limits and microwave wavelength limitations. Summary of the Invention

[0005] The present invention provides an NV color center array addressing device and method, which at least solves the problem in the related art that it is difficult to achieve crosstalk-free independent addressing of high-density NV color center arrays due to optical diffraction limit and microwave wavelength limitation.

[0006] An embodiment of the present invention provides an NV color center array addressing device, comprising: The light field localization array includes multiple optical antenna units corresponding to the NV color centers in the NV color center array. The optical antenna units are configured to localize the incident light field into a local electric field to excite the target NV color center and collect the fluorescence signal emitted by the target NV color center. The microwave control array includes multiple microwave antenna elements corresponding to the NV color centers in the NV color center array. The microwave antenna elements are configured to apply a near-field microwave magnetic field to the target NV color center to manipulate the spin state of the target NV color center.

[0007] In some embodiments, the optical antenna unit includes a metal nanoantenna configured to generate a localized surface plasmon resonance effect under illumination by an incident light field, thereby forming a localized electric field for pumping the target NV color center from the ground state to the excited state.

[0008] In some embodiments, the metal nanoantenna is configured as a bowtie antenna disposed on top of the NV color center array. The bowtie antenna includes two opposing metal nanostructures having opposing tips, with a nano gap formed between the two tips.

[0009] In some embodiments, the width of the nanogap is 10 nm to 20 nm; and / or, the bowtie antenna is made of gold.

[0010] In some embodiments, the field enhancement factor of the metal nanoantenna is:

[0011] In the formula: Indicates local electric field, Indicates the incident light field. Indicates the width of the nanometer gap. This represents the plasma resonance quality factor. This represents the wavelength of the incident light field.

[0012] In some embodiments, the microwave antenna element is configured as a loop microwave antenna, which is disposed at the bottom of the NV color center array; The loop microwave antenna is configured to apply a microwave magnetic field that matches the crystallographic orientation of the target NV color center to the target NV color center, and to selectively manipulate the spin state of the target NV color center based on the frequency of the microwave magnetic field, wherein the frequency of the microwave magnetic field is set based on the Zeeman resonance frequency of the target NV color center.

[0013] In some embodiments, the frequency range of the microwave magnetic field is 2.5 GHz to 3.5 GHz.

[0014] In some embodiments, the device further includes an electromagnetic shielding structure disposed on the outer periphery of the ring microwave antenna; The electromagnetic shielding structure is configured to generate a mirror magnetic field through induced eddy currents, thereby suppressing the leakage electromagnetic radiation of the ring microwave antenna.

[0015] In some embodiments, the electromagnetic shielding structure is made of nickel-chromium alloy or copper; and / or, the electromagnetic shielding structure is grounded.

[0016] In some embodiments, the apparatus further includes a crosstalk compensation module configured to apply a crosstalk compensation signal to adjacent optical antenna elements of the optical antenna element corresponding to the target NV color center based on a pre-calibrated crosstalk coefficient matrix, so as to cancel the residual crosstalk of the adjacent optical antenna elements to the target NV color center.

[0017] In some embodiments, the mathematical expression for the crosstalk compensation signal is:

[0018] In the formula, This indicates the applied compensation signal. Represents the crosstalk coefficient. Indicates the original control signal. and This indicates the number of the optical antenna element and the NV color center.

[0019] In some embodiments, the device further includes a CMOS driving circuit, wherein each of the microwave antenna elements is connected to the CMOS driving circuit via a through-silicon via, and the CMOS driving circuit is configured to inject microwave signals into the microwave antenna elements through the through-silicon vias to form a near-field microwave magnetic field through the microwave antenna elements.

[0020] This invention provides an NV color center array addressing method, comprising: The incident light field is localized into a local electric field by an optical field localization array, and the target NV color center is excited by the local electric field to initialize the spin of the target NV color center to the ground state. A near-field microwave magnetic field is applied to the target NV color center by a microwave control array to manipulate the ground state spin of the target NV color center; The target NV center is re-excited based on the local electric field, and the fluorescence signal emitted by the target NV center is received through the optical field localization array to read out the spin state of the target NV center.

[0021] The NV center array addressing device and method provided by this invention localizes the incident light field into a local electric field through optical antenna elements in the optical field localization array, confining the light field energy to the target NV center region at the nanoscale. This breaks through the Abbe diffraction limit of traditional far-field optical systems, achieving high-precision independent optical excitation and fluorescence signal collection of nanoscale-spaced NV centers. Simultaneously, a near-field microwave magnetic field is applied to the target NV center through microwave antenna elements in the microwave control array. Utilizing the physical characteristic of rapid attenuation of the near-field magnetic field with distance, the microwave manipulation range is strictly limited to a local region of the target NV center, effectively avoiding non-selective interference of traditional far-field microwave radiation to neighboring NV centers and significantly suppressing microwave crosstalk. This invention, through the synergistic cooperation of near-field optical field localization and near-field microwave manipulation, solves the problem in related technologies where high-density NV center arrays are difficult to achieve crosstalk-free independent addressing due to optical diffraction limits and microwave wavelength limitations, significantly improving the spatial resolution and control fidelity of multi-qubit independent addressing. Attached Figure Description

[0022] To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention, and those skilled in the art can obtain other embodiments based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the overall structure of an NV color center array addressing device according to an embodiment of the present invention.

[0024] Figure 2 This is a partial structural schematic diagram of an NV color center array addressing device according to an embodiment of the present invention.

[0025] Figure 3 This is a schematic diagram of the bowtie-type antenna according to an embodiment of the present invention.

[0026] Figure 4 This is a schematic flowchart of an NV color center addressing method according to an embodiment of the present invention.

[0027] Explanation of reference numerals in the attached figures: 100. NV color center array addressing device; 110. Optical field localization array; 111. Bowtie antenna; 112. Metal nanostructure; 113. Nano gap; 120. Microwave control array; 121. Loop microwave antenna; 122. Metal shielding ring; 123. Through silicon via; 130. CMOS driving circuit; 200. NV color center array; 210. NV color center. Detailed Implementation

[0028] Embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. While some embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of protection of the present invention.

[0029] In related technologies, the magnetic dipole-dipole coupling strength between different NV color centers in an NV (nitrogen-vacancy) color center array With NV color center spacing by The amplitude attenuation. In order to achieve effective Ising-type coupling ( ), the NV color center spacing needs to be adjusted. The wavelength is controlled to be <30 nm. However, with such a dense arrangement, independent addressing of a single NV color center presents two major physical obstacles: optical diffraction limit and microwave crosstalk. Optical diffraction limit: The resolution of far-field optics is constrained by the Abbe diffraction limit.

[0030] The excitation and readout of the NV color centers were performed using 532nm excitation light (i.e., green light, numerical aperture NA=1), with a minimum resolution distance of [missing information]. This is approximately nine times greater than a 30nm spacing. This means that traditional far-field optics (such as confocal microscopes and optical cavities) are simply unable to distinguish adjacent NV color centers with a spacing of <30nm.

[0031] Microwave crosstalk: The manipulation of NV color centers utilizes a 2.87GHz microwave wavelength, which is the NV color center spacing ( )of The difference is several times. Under far-field microwave illumination, all NV color centers experience almost the same microwave field, making it impossible to achieve independent microwave manipulation of individual spins.

[0032] To address the problem in related technologies that high-density NV color center arrays are limited by optical diffraction limits and affected by microwave crosstalk, making it difficult to achieve crosstalk-free independent addressing, the embodiments of this invention provide an NV color center array addressing device and method that can solve the above problems.

[0033] like Figure 1 and Figure 2As shown, an embodiment of the present invention provides an NV color center array addressing device 100, including an optical field localization array 110 and a microwave control array 120. Specifically, the NV color center array addressing device 100 adopts a three-dimensional integrated architecture, with the optical field localization array 110, the microwave control array 120, and the NV color center array 200 arranged in layers.

[0034] Specifically, the light field localization array 110 created in this invention includes a plurality of optical antenna units corresponding to the NV color centers 210 in the NV color center array 200. The optical antenna units are configured to localize the incident light field into a local electric field to excite the target NV color centers and collect the fluorescence signals emitted by the target NV color centers. It can be understood that "localization" in this embodiment refers to using the optical antenna units to localize the incident light field propagating in free space. The light energy is converted into a near-field mode dominated by evanescent waves (high spatial frequency), which confines the light energy to a nanoscale region much smaller than the diffraction limit, forming a local electric field. Compared to traditional diffraction-limited far-field optics which only carry low spatial frequencies... (Cutoff frequency) Evanescent waves above this frequency attenuate exponentially in the far field, leading to loss of subwavelength details and limited resolution. This invention creates a method to localize the incident light field using an optical field localization array 110. Localized into a near-field local electric field It directly captures the incident light field without relying on far-field imaging. Localization to the nanoscale overcomes the diffraction limit, enabling direct excitation and readout (fluorescence signal collection) of target NV centers, allowing independent addressing of target NV centers without affecting other NV centers 210. Multiple optical antenna elements in the optical field localization array 110 are arranged in a one-to-one correspondence with multiple NV centers 210 in the NV center array 200. This one-to-one spatial relationship ensures the localized electric field generated during independent addressing. Covering only the target NV color center without affecting adjacent NV color centers 210 can reduce crosstalk between optical antenna elements and ensure the reliability of independent addressing of NV color centers.

[0035] Specifically, the microwave control array 120 of this invention includes a plurality of microwave antenna elements corresponding to the NV color centers 210 in the NV color center array 200. The microwave antenna elements are configured to apply a near-field microwave magnetic field (microwave signal) to the target NV color center to manipulate its spin state. Specifically, due to the microwave wavelength (wavelength of 2.87 GHz microwave)... The distance between the optical and optical fields is much greater than the NV center spacing (30nm), making it impossible for traditional far-field microwaves to spatially distinguish adjacent NV centers 210. This embodiment generates a near-field microwave magnetic field with extremely rapid spatial decay through microwave antenna elements. The field strength decreases exponentially or exponentially with distance, thus limiting the effective control range to a small area containing the target NV center. Each microwave antenna element corresponds to one NV center 210, meaning one microwave antenna element controls one NV center 210 to perform spin-flipping. It should be understood that the microwave control array 120 and the optical field localization array 110 are physically decoupled, meaning they can be fabricated in different dielectric layers, avoiding direct interference between the optical path and the microwave circuit. However, functionally, they coordinate with the NV center array 200, meaning the same NV center 210 can be independently excited by its top optical antenna element and independently controlled by its bottom microwave antenna element. This dual-array independent correspondence architecture ensures the scalability and control fidelity of the high-density qubit array.

[0036] In this embodiment, the incident light propagating in free space is converted into a near-field localized electric field dominated by evanescent waves by the optical field localization array 110, so that the light field energy is concentrated in the target NV color center region at the nanoscale, thereby breaking through the limitation of the far-field optical diffraction limit on addressing resolution at the physical level; at the same time, the near-field microwave magnetic field with extremely fast spatial decay is generated by the microwave control array 120, realizing the selective manipulation of the spin state of a single NV color center 210, and avoiding the non-selective interference of far-field microwave radiation on neighboring qubits.

[0037] In some embodiments, the optical antenna unit includes a metallic nanoantenna configured to generate a localized surface plasmon resonance (LSPR) effect under illumination by an incident light field, forming a localized electric field for pumping the target NV color center from the ground state to the excited state. This embodiment utilizes the collective oscillation characteristics of free electrons in metallic materials to excite surface plasmons under illumination of a specific wavelength, compressing the light energy into a subwavelength-scale mode volume, significantly enhancing the photon density of states at the target location, thereby improving the excitation efficiency and fluorescence collection signal-to-noise ratio of a single NV color center 210.

[0038] Specifically, the localized surface plasmon resonance effect refers to the phenomenon where the incident light field... When the frequency matches the collective oscillation frequency of the free electrons in the metal nanoantenna, a coherent electronic oscillation mode is excited on the metal surface of the metal nanoantenna. This oscillation mode can divert the incident light field... The energy is compressed and confined within a tiny volume on the metal surface, forming an intensity far exceeding that of the incident light field. The near-field evanescent wave. Since the spatial distribution of the formed near-field evanescent wave depends only on the geometry and shape of the metallic nanoantenna (e.g., skin depth). This is not limited by the wavelength of the incident light. Thus, this embodiment fundamentally breaks through the Abbe diffraction limit of traditional far-field optical systems through the localized surface plasmon resonance effect, enabling the optical addressing resolution to be improved from the hundreds of nanometers to the nanometers, thereby achieving selective excitation of high-density arranged target NV color centers and improving the addressing accuracy and efficiency of NV color centers 210.

[0039] like Figure 1 and Figure 3 As shown, the metal nanoantenna created in this invention is configured as a bowtie antenna. The bowtie antenna 111 is disposed on top of the NV color center array 200. The bowtie antenna 111 includes two oppositely arranged metal nanostructures 112, each with opposing tips, forming a nano gap 113 between the two tips. In this embodiment, through the superposition of the tip lightning rod effect of the bowtie structure and the gap coupling effect, an extremely high-intensity electric field is formed at the center of the nano gap 113. The spatial distribution of this electric field is determined only by the geometric structure and is not limited by the incident light wavelength, ensuring a high degree of matching between the optical addressing accuracy and the position of the NV color center 210.

[0040] Specifically, when the incident light field When the light shines on the bowtie antenna 111, it excites localized surface plasmon resonance of free electrons on its surface. The free electrons in the incident light field... This generates collective oscillations in the PHz frequency band under driving force. For example... Figure 3 As shown, the two metal nanostructures 112 can be configured as a triangular structure, where charges accumulate at their tips, forming an extremely strong electric field in the central region of the nanogap 113. The spatial frequency of this region far exceeds the cutoff frequency of free-space light and is not constrained by the diffraction limit (250 nm). The spatial distribution of this electric field is mainly determined by the geometry (width and tip curvature radius) of the nanogap 113, rather than the wavelength of the incident light field. In this embodiment, the arrangement of the bowtie antenna 111 on top of the NV color center array 200 not only benefits the incident light field... The axial coupling and upward collection of fluorescence signals also avoid the blockage and interference of the microwave control array 120 at the bottom of the NV color center array 200 on the optical path between the optical field localization array 110 and the NV color center array 200, thus improving the addressing reliability of the NV color center array 200.

[0041] In some embodiments, the width of the nanogap 113 is 10 nm to 20 nm. Specifically, the width of the nanogap 113 of the bowtie antenna 111 is a key parameter determining the degree of optical field localization and the enhancement factor. When the width of the nanogap 113 is in the range of 10 nm to 20 nm, it can not only ensure the incident light field... It can be fully compressed to the subwavelength scale to meet the low crosstalk addressing requirements of the NV center array 200 with a 30nm NV center spacing; it can also avoid the field enhancement saturation problem caused by quantum tunneling effect when the nano-gap 113 is too small (e.g., less than 10nm), while taking into account the yield and repeatability of existing electron beam lithography or focused ion beam processing technology. For example, when the width of the nano-gap 113 is 10nm, an extremely high field enhancement factor can be obtained, which is suitable for single-photon readout scenarios with extremely high excitation efficiency requirements; while when the width of the nano-gap 113 is 20nm, although the field enhancement is slightly reduced, the processing tolerance is larger, making it more suitable for large-scale NV center arrays 200.

[0042] In some embodiments, the bowtie antenna 111 is made of gold (Au). Specifically, gold has low ohmic loss and excellent chemical stability in the visible light band (near the wavelength of the incident light field at 532nm), is not easily oxidized or sulfided, and can maintain high-quality plasmon resonance characteristics for a long time, ensuring the long-term reliability of the NV color center array addressing device 100. Of course, in other embodiments, highly conductive metal materials such as silver (Ag), aluminum (Al), or copper (Cu) can be selected according to actual needs, or novel plasmonic materials such as titanium nitride (TiN) can be used to adapt to different operating bands or integration process requirements.

[0043] In some embodiments, the field enhancement factor of the metal nanoantenna is:

[0044] In the formula: Indicates local electric field, Indicates the incident light field. This represents the width of the nanometer gap 113. This represents the plasma resonance quality factor. This represents the wavelength of the incident light field. Specifically, the field enhancement factor is inversely proportional to the square of the width of the nanogap 113, meaning that a small reduction in the size of the nanogap 113 can lead to a significant increase in field strength.

[0045] For example, at the wavelength of the incident light field Plasma resonance quality factor The width of the 113 nanometer gap Under the given conditions, the field enhancement factor can be calculated using the above formula as follows: The plasmonic resonance quality factor in this embodiment This reflects the ability of the metallic nanoantenna to store electromagnetic energy; a higher value indicates a narrower resonance peak and higher energy localization efficiency. The plasma resonance quality factor can be optimized by precisely controlling the geometry of the metallic nanostructure 112 (such as base length, height, and tip angle). Combined with the precise design of the width of the 113 nanometer gap, it can achieve field enhancement of up to several thousand times, ensuring that sufficient fluorescence counting rate can still be obtained under extremely low incident light field intensity, providing a solid physical basis for high-fidelity, low-crosstalk quantum state readout.

[0046] Understandably, crosstalk typically exists between adjacent metallic nanoantennas in the optical field localization array 110, and the plasma near field... Attenuation (skin depth) Material: Au; Incident light wavelength: 532 nm. Antenna spacing. At that time, the crosstalk between metal nanoantennas is approximately:

[0047] Antenna spacing At that time, the crosstalk is approximately:

[0048] By combining this with a subwavelength grating (SWG) directional suppression structure, crosstalk can be reduced to... .

[0049] In some embodiments, the microwave antenna element is configured as a loop microwave antenna 121, which is disposed at the bottom of the NV color center array 200.

[0050] Specifically, when microwave current flows through the microwave antenna element, according to the Biot-Savart law, a highly concentrated axial magnetic field component is generated in the direction of the ring's central axis. For the NV color center 210 in the (111) crystal plane diamond quantum layer, its spin quantization axis is usually perpendicular to the surface of the NV color center array 200. The axial magnetic field generated by the ring microwave antenna 121 is exactly parallel to this quantization axis, thus enabling the spin flipping to be driven with the maximum overlap integral, significantly improving the Rabi frequency and control efficiency. At the same time, arranging the ring microwave antenna 121 at the bottom of the NV color center array 200 forms an axial spatial decoupling with the optical antenna element located at the top. This avoids the blocking and absorption of the incident light field and fluorescence signal by the metal microwave circuit, and utilizes the NV color center array 200 as an intermediate dielectric layer to achieve the function of a natural optical-electrical isolation buffer, further optimizing the system's signal-to-noise ratio. It should be understood that although a loop antenna is preferred in this embodiment, in other embodiments, microwave transmission line structures that can generate local near-field magnetic fields, such as open-loop resonators, spiral inductors, or coplanar waveguides, can also be used, as long as the direction of the magnetic field vector generated can effectively couple the spin state of the target NV color center.

[0051] Specifically, the loop microwave antenna 121 is configured to apply a microwave magnetic field matching the crystallographic orientation of the target NV center to it. The frequency of the microwave magnetic field is used to selectively manipulate the spin state of the target NV center, and the frequency of the microwave magnetic field is set based on the Zeeman resonance frequency of the target NV center. This embodiment utilizes the matching between the axial magnetic field component generated by the loop current and the spin transition selection rule of the NV center 210 to achieve efficient spin flipping. Combined with the frequency coding mechanism of Zeeman splitting, even in spatially overlapping microwave fields, frequency addressing can further distinguish NV centers at different locations, improving the orthogonality of the manipulation. This frequency-selective mechanism utilizes the Zeeman splitting characteristic of the ground-state spin triplet of the NV center 210 under an external bias magnetic field. Even if adjacent NV centers 210 are extremely close in space, their resonance frequencies will shift as long as there are slight differences in their local magnetic field environments (e.g., introduced by gradient magnetic fields or inherent stress inhomogeneities). At this point, by precisely adjusting the signal frequency injected into the loop microwave antenna 121, only the target NV color center at a specific frequency can be excited, while the detuned neighboring color centers are not effectively controlled. This increases the addressing orthogonality of the frequency dimension on the basis of physical spatial isolation, and greatly improves the independent control fidelity of the high-density array.

[0052] In some embodiments, the frequency range of the microwave magnetic field is 2.5 GHz to 3.5 GHz. This band fully covers the ground-state spin splitting frequency of NV color center 210 under zero-field conditions (approximately 2.87 GHz) and the Zeeman frequency shift under conventional experimental bias magnetic fields (e.g., 0 to 100 mT). That is, there exists a microwave feed frequency of This wideband design ensures that the NV color center array addressing device 100 has universal control capability for NV color centers 210 with different growth batches, different stress states, and different working magnetic field environments, without the need to redesign microwave circuit parameters for each sample, thus enhancing the robustness and versatility of the system.

[0053] In some embodiments, the NV color center array addressing device 100 of the present invention further includes an electromagnetic shielding structure disposed on the outer periphery of the ring microwave antenna 121. The electromagnetic shielding structure is configured to generate a mirror magnetic field through induced eddy currents, thereby suppressing the outward electromagnetic radiation of the ring microwave antenna 121. This embodiment utilizes the principle of electromagnetic induction to generate a mirror current in the electromagnetic shielding structure that is opposite in direction to the source magnetic field, thereby forming destructive interference in the far-field region, significantly reducing the mutual inductive coupling between adjacent microwave antenna elements, and ensuring the microwave isolation of the high-density array from a hardware perspective.

[0054] like Figure 2 As shown, the electromagnetic shielding structure surrounds the ring microwave antenna 121, forming a coaxial nested layout. Its working principle is not a simple reflection or absorption, but rather an active cancellation mechanism based on electromagnetic induction: when an alternating microwave current flows through the ring microwave antenna 121, its outwardly diffused stray magnetic field passes through the electromagnetic shielding structure. According to Faraday's law of electromagnetic induction and Lenz's law, eddy currents opposite in direction to the source current are induced within the shielding. These eddy currents then generate a mirror magnetic field with the opposite phase and equivalent amplitude to the original leaking magnetic field. The two fields interfere destructively in a region far from the antenna, thus forcibly confining the microwave energy to the near-field region inside the ring microwave antenna 121. This dynamic shielding mechanism based on the mirror effect, compared to traditional static magnetic shielding materials, has a superior suppression effect on microwave radiation in the GHz band, reducing microwave crosstalk between adjacent units by more than 30 dB, effectively ensuring the independence of parallel manipulation of multiple qubits at nanometer-level spacing.

[0055] Specifically, the field distribution of the axial magnetic field generated at the center of the loop microwave antenna 121 in this invention can be expressed as follows:

[0056] in, Indicates the axial magnetic field strength. This represents the radial distance from the loop microwave antenna 121 to the target NV color center. Represents the permeability of free space. Represents microwave current. This indicates the diameter of the loop microwave antenna 121. This represents the axial distance from the ring microwave antenna 121 to the target NV color center.

[0057] Among them, when hour, Approximately uniform; but in Location (near the location of the ring microwave antenna 121). It will decay rapidly. Induced eddy currents are generated in the electromagnetic shielding structure, thus creating a mirror magnetic field, which further cancels out leakage radiation.

[0058] In some embodiments, the electromagnetic shielding structure employs a metal shielding ring 122. Specifically, when the metal shielding ring 122 is too close to the loop microwave antenna 121, the reverse magnetic field generated by the induced eddy currents in the ring will intrude into the effective operating area of ​​the loop microwave antenna 121, weakening the axial magnetic field strength sensed by the target NV color center. A predetermined safety gap is maintained between the inner diameter of the metal shielding ring 122 and the edge of the loop microwave antenna 121, ensuring that the normal operation of the near-field region of the loop microwave antenna 121 is not affected. Since the metal shielding ring 122 must be located within the "perceptible" range of the leakage field of the loop microwave antenna 121, the transverse magnetic field of the loop microwave antenna 121 varies with radial distance. Rapid attenuation occurs when the outer diameter of the metal shielding ring 122 is too large. This results in insufficient magnetic flux penetrating the ring, inadequate eddy current amplitude, and a significantly reduced mirror magnetic field cancellation effect, failing to achieve 30dB isolation. Therefore, the size of the metal shielding ring 122 should be set within a reasonable range relative to the size of the loop microwave antenna 121 to ensure it does not interfere with the near-field region of the loop microwave antenna 121 and that the metal shielding ring 122 can effectively couple the leakage field.

[0059] In some embodiments, the shielding effect (isolation) of the metal shielding ring 122 is represented by the microwave crosstalk suppression ratio, which can be further expressed as:

[0060] in, This represents the axial magnetic field at the center of the loop antenna. This represents the axial magnetic field at the edge of the inner diameter of the metal shielding ring 122. The inner diameter of the metal shielding ring 122 is represented. The first term in the formula can be used to represent the spatial attenuation of the field of the loop microwave antenna 121 itself (when unshielded), and the second term can be used to represent the additional attenuation introduced by the metal shielding ring 122. Under the design parameters, the isolation is >30 dB (<0.1% crosstalk).

[0061] In some embodiments, the electromagnetic shielding structure is made of nickel-chromium alloy (NiCr) or copper (Cu). Understandably, the material selection for the electromagnetic shielding structure in this embodiment takes into account conductivity, skin depth, and process compatibility. For example, copper has extremely high conductivity, generating a strong eddy current response, making it suitable for scenarios with extremely high shielding effectiveness requirements; while nickel-chromium alloy, although having slightly lower conductivity, has moderate resistivity, which helps dampen high-frequency parasitic oscillations and prevents the shield itself from ringing due to excessively high Q values. Furthermore, it has superior corrosion resistance and thermal stability, making it suitable for long-term quantum sensing systems.

[0062] In some embodiments, the electromagnetic shielding structure is grounded. This invention, by grounding the electromagnetic shielding structure, provides a low-impedance discharge path for induced charge accumulation, preventing the electromagnetic shielding structure from developing a floating potential due to charge accumulation, thus avoiding its transformation into a new secondary radiation source.

[0063] In some embodiments, the NV color center array addressing device 100 of the present invention further includes a crosstalk compensation module (not shown in the figure). The crosstalk compensation module is configured to apply a crosstalk compensation signal to the adjacent optical antenna elements of the optical antenna element corresponding to the target NV color center based on a pre-calibrated crosstalk coefficient matrix, so as to cancel the residual crosstalk of the adjacent optical antenna elements to the target NV color center.

[0064] Specifically, although the electromagnetic shielding structure in the above embodiments has significantly suppressed microwave crosstalk at the hardware level, a small amount of non-ideal residual coupling still exists during actual fabrication and operation due to factors such as nanofabrication tolerances, material inhomogeneities, and environmental temperature drift. Without treatment, this residual coupling accumulates and leads to a decrease in quantum logic gate fidelity during the parallel manipulation of a large-scale NV color center array of 200. This embodiment introduces a crosstalk compensation module, concretizing the abstract crosstalk suppression function into an executable mathematical model and digital signal processing flow, achieving "algorithm sinking" and hardware-software synergy. This crosstalk compensation module does not replace the electromagnetic shielding structure but serves as a second line of defense, specifically targeting dynamic or static errors that cannot be completely eliminated by hardware, thereby ensuring the stability and accuracy of the system during long-term operation.

[0065] Specifically, the core operation of the crosstalk compensation module relies on accurate crosstalk coefficient matrix calibration. The calibration process is typically performed during device initialization or periodic calibration and includes the following steps: First, individual antenna elements in the optical field localization array 110 or microwave control array 120 transmit test signals one by one, while simultaneously acquiring the fluorescence response or spin state readout signals of all NV color centers 210; second, a system response matrix is ​​constructed based on the test results, where the diagonal elements represent the self-response of the target element, and the off-diagonal elements represent the crosstalk response of neighboring elements to the target; finally, the crosstalk coefficient matrix characterizing the coupling strength between elements is extracted by normalizing or inversely operating the response matrix. It should be understood that this calibration process is applicable not only to the measurement of optical crosstalk but also to the characterization of microwave crosstalk, and multiple sets of coefficient matrices can be established under different frequencies and power conditions to adapt to diverse control scenarios.

[0066] In some embodiments, the mathematical expression for the crosstalk compensation signal is:

[0067] In the formula, This indicates the applied compensation signal (such as light intensity or microwave amplitude). Represents the crosstalk coefficient. Indicates the original control signal. and This indicates the numbering of the optical antenna element and NV color center 210. This formula establishes a linear decoupling model for the multi-channel coupled system. In actual implementation, the crosstalk compensation module will superimpose the calculated compensation signal onto the [missing information - likely a specific signal or component]. On the original driving signal of each channel, the net field strength acting on the target NV color center is equal to the ideal value plus the residual amount after mutual cancellation, thus mathematically approximating the zero crosstalk state.

[0068] To more clearly illustrate the crosstalk compensation mechanism of the above-mentioned crosstalk compensation module, a 3×3 NV color center array is used as an example. Assume that the NV color center 210 (numbered A5) located at the center of this array is the target object to be manipulated, and the eight surrounding NV color centers 210 (numbered A1-A4, A6-A9) are potential interference sources. When the system needs to apply a manipulation signal to A5 alone, due to near-field coupling, the neighboring NV color centers 210 such as A2, A4, A6, and A8 may induce parasitic fields and, in turn, affect A5, or generate an unexpected background field at the A5 location. In this case, the crosstalk compensation module will calculate in real time, based on a preset crosstalk coefficient, the reverse compensation signal that needs to be applied to these neighboring units. For example, if the crosstalk coefficient of A6 to A5 is measured to be 0.02, and the original drive signal of A6 is currently 0 (it should not be working), but because there is actually a small induced voltage in the circuit crosstalk, or to prevent interference to A5 when it is turned on in the future, the system can pre-inject a negative bias proportional to the induced voltage into A6, or dynamically adjust the baseline level of the NV color center 210 of the adjacent channel when it is turned on. Through this active feedforward compensation, even if the hardware isolation is only 30dB (on the order of 0.1%), the effective crosstalk after algorithm correction can be further reduced to 0.01% or even lower, meeting the stringent error rate requirements of high-fidelity quantum computing.

[0069] In some embodiments, the NV color center array addressing device created by the present invention further includes a CMOS driving circuit 130, and each microwave antenna element is connected to the CMOS driving circuit 130 through a through silicon via 123 (TSV). The CMOS driving circuit 130 is configured to inject microwave signals into the microwave antenna elements through the through silicon via 123 to form a near-field microwave magnetic field through the microwave antenna elements.

[0070] Specifically, such as Figure 2 As shown in the cross-sectional view, the CMOS (Complementary Metal-Oxide-Semiconductor) driver circuit 130, serving as the signal source and control core of the entire addressing device, is located at the bottom layer of the three-dimensional integrated architecture, while the microwave antenna unit is located in the metallization layer above the CMOS driver circuit 130. The two are not connected via conventional planar wire bonding or surface mounting, but rather through silicon vias 123 to achieve axial electrical interconnection. Understandably, a silicon via 123 is a conductive channel penetrating the silicon substrate and the intermediate dielectric layer, typically filled with a high-conductivity metal (such as copper or tungsten), and has an insulating layer on its sidewalls to prevent signal leakage to the substrate. In this embodiment, this three-dimensional heterogeneous integrated architecture allows for the tight spatial stacking of classical control circuitry and quantum sensor devices, enabling each microwave antenna unit to receive an independent and direct drive signal from the bottom-layer CMOS driver circuit 130, thereby achieving true pixel-level parallel addressing capability.

[0071] Understandably, this three-dimensional stacked structure offers significant technical advantages over traditional planar wiring. First, in the microwave band (2.5GHz to 3.5GHz), parasitic inductance and capacitance of signal transmission lines severely affect pulse rise time and impedance matching, leading to signal distortion and power loss. The axial interconnect paths of the Through-Silicon Via 123 are extremely short (typically only a few micrometers to tens of micrometers), which, compared to the millimeter-long lengths of planar traces, can reduce parasitic inductance by more than an order of magnitude, thus ensuring microwave pulse fidelity and energy transmission efficiency. Second, the high-density NV color center array 200 requires each qubit to have an independent control channel. If planar fan-out wiring is used, wiring congestion and crosstalk problems will worsen exponentially as the array size increases. The Through-Silicon Via 123 utilizes Z-axis space resources, liberating signal routing from a two-dimensional plane to three-dimensional space, significantly increasing I / O density per unit area. This provides the necessary hardware foundation for building quantum processors with hundreds or even thousands of qubits. In addition, the CMOS driver circuit 130 can also integrate functional modules such as digital-to-analog conversion, timing control and feedback processing to further shorten signal loop delay and improve the overall response speed of the system.

[0072] Specifically, to ensure efficient microwave signal injection, the dimensions and process parameters of the through-silicon via (TSV) 123 need to be carefully designed. For example, in a preferred embodiment of this application, the aspect ratio of the TSV 123 is set between 5:1 and 10:1. This ensures sufficient current carrying capacity and low DC resistance without occupying too much effective area or introducing excessive parasitic capacitance due to an excessively large aperture. The TSV 123 is filled with electroplated copper or chemical vapor deposition tungsten to ensure that there are no voids or gaps inside the TSV 123, avoiding microwave signal reflection or thermal failure caused by defects. It should be understood that in practical applications, the dimensions of the TSV 123 can be flexibly adjusted within a suitable range according to the microwave frequency, current requirements, and process capabilities. Furthermore, the TSV 123 can not only be used to transmit microwave drive signals but also multiplexed to transmit optical modulation signals or bias voltages, thereby achieving vertical integration of multifunctional signals.

[0073] like Figure 4 As shown, an embodiment of the present invention provides an NV color center array addressing method, comprising the following steps: S201, the incident light field is localized into a local electric field through the light field localization array 110, and the target NV color center is excited by the local electric field to initialize the spin of the target NV color center to the ground state.

[0074] Specifically, when the optical antenna elements in the light field localization array 110 convert the incident light field with a wavelength of 532 nm into a highly localized near-field evanescent wave, the target NV color center located in this near-field region is excited. Because a non-radiative intersystem crossing channel exists during the relaxation process from the excited state to the ground state of the target NV color center, and this channel is selective for spin states (preferably relaxing from the ms=±1 state to the ms=0 state), after several excitation-relaxation cycles, the electron spin of the target NV color center will be polarized and initialized to the ground state sub-level of ms=0. During this process, the spatial localization range of the light field is confined within the nanometer gap 113 (10 nm-20 nm), ensuring that other NV color centers adjacent to the target NV color center are almost not excited because they are outside the evanescent wave attenuation region, thus guaranteeing the independence of the initialization operation at the physical level. Compared to traditional far-field optical pumping, this near-field initialization method not only eliminates the risk of misoperation of neighboring qubits, but also significantly shortens the initialization time due to the field enhancement effect, thereby improving the overall addressing rate.

[0075] In step S202, a near-field microwave magnetic field is applied to the target NV color center via the microwave control array 120 to manipulate the ground-state spin of the target NV color center. Specifically, after spin initialization, the ring microwave antenna 121 in the microwave control array 120 injects a microwave signal with a specific frequency, amplitude, and phase into the target NV color center according to preset quantum logic gate instructions (e.g., π / 2 or π pulses corresponding to Hadamard gates, CNOT gates, etc.). Since the magnetic field generated by the ring microwave antenna 121 is mainly concentrated in the near-field region near the central axis of the ring and decays rapidly with a high power of distance, only the target NV color center located at the top of the ring microwave antenna 121 experiences an effective Rabi driving field, thereby realizing single-qubit rotation or two-qubit entanglement operation. At the same time, combined with the frequency selectivity mechanism mentioned in the above embodiment, even if there is weak spatial crosstalk in extreme cases, it can be further distinguished by accurately matching the Zeeman resonance frequency of the target NV color center, forming a dual addressing protection of "space + frequency". It should be understood that the parameters of the microwave pulse can be dynamically adjusted according to the specific quantum algorithm requirements, and the microwave manipulation and excitation / readout of the target NV color center are set with nanosecond-level timing intervals to avoid mutual interference between the light field and the microwave field.

[0076] Step S203: The target NV center is re-excited based on the local electric field, and the fluorescence signal emitted by the target NV center is received through the optical field localization array 110 to read out the spin state of the target NV center.

[0077] Specifically, after manipulating the NV center 210, a local electric field is generated using an optical antenna unit to re-excite the target NV center. Since the fluorescence intensity of the ms=0 state is significantly higher than that of the ms=±1 state (by approximately 30%), the final spin state of the target NV center after microwave manipulation can be inferred by collecting and integrating the photon counts during this time period. Similarly, thanks to the nanoscale localization of the light field, the fluorescence signal collection has an extremely high spatial signal-to-noise ratio, effectively avoiding background fluorescence interference from neighboring NV centers 210. Furthermore, since the readout process reuses the optical channel from the initialization phase, no additional alignment or optical path switching is required, which not only simplifies the system complexity but also ensures a high degree of overlap between the initialization and readout positions, eliminating measurement errors caused by light spot drift.

[0078] To further verify the technical effectiveness of the NV color center array addressing device 100 and addressing method created by this invention, this embodiment further provides a specific application case based on a 10×10 NV color center array. The hardware configuration of this application case is: a CVD diamond substrate with crystal orientation (111) (size: ), The addressing device comprises an NV color center array, an NV color center spacing of 50 nm (both row and column spacing are 50 nm), a light field localization array 110 including 100 bowtie antennas 111 (nanometer gaps 113 are 15 nm), and a microwave control array 120 including 100 loop microwave antennas 121. The fabrication process of this addressing device is as follows: First, high-purity (111) crystal-oriented CVD diamond is selected as the substrate, and high-precision alignment marks are defined on the surface using electron beam lithography (EBL). Subsequently, a focused ion beam (FIB) system is used to perform nitrogen ion (… Implantation was performed at an energy level controlled at approximately 10 keV, with about 10 ions injected at each point to achieve deterministic generation of a single NV color center 210. During this process, the implantation position accuracy of the focused ion beam was controlled within 5 nm to ensure precise alignment between the subsequent optical antenna unit and the NV color center 210, allowing the NV color center 210 to be precisely positioned directly below the optical antenna unit. After implantation, the sample was subjected to 10... -6A high-temperature annealing process at 800°C for 2 hours under a vacuum of mbar promotes the bonding of injected nitrogen atoms with vacancies in the diamond lattice to form NV color centers 210. Next, electron beam lithography is used again to define the pattern of the bowtie antenna 111, and SEM / AFM joint positioning technology is used to perform a secondary alignment between the center of the nano-gap 113 and the actual position of the NV color center 210 below, with the alignment deviation controlled within 10nm. Finally, a 30nm gold film evaporation and lift-off process is used to form the light field localization array 110. The microwave control array 120 is fabricated on the bottom of the NV color center 210 using standard photolithography and metallization processes, and interconnected with the CMOS driving circuit 130 through through-silicon vias 123 (TSVs).

[0079] Furthermore, after fabrication, optical addressing tests were performed to determine the corresponding performance parameters. For example, when a 532nm wavelength laser was incident, the full width at half maximum (FWHM) of the local electric field distribution at the nano-gap 113 of the bowtie antenna 111 was approximately 20nm, representing the resolution of optical addressing. Subwavelength-scale optical resolution was successfully achieved. The width of the nano-gap 113 was 15nm, and the plasmonic resonance quality factor was... Under the condition of 10, the theoretically calculated field enhancement factor is approximately 2000 times. The measured fluorescence count rate of a single NV center 210 is about 50 times higher than that of a bare diamond sample without integrated antennas. This is highly consistent with the theoretical expectation of increased radiation rate and excitation efficiency due to the Purcell effect, i.e., Purcell enhancement can be achieved. More importantly, in the optical crosstalk test of adjacent NV centers 210, the original optical crosstalk at a 50nm spacing is about 3% without algorithm compensation; however, after enabling the crosstalk compensation module in the above embodiment, by applying a compensation signal based on the calibration matrix calculation, the residual optical crosstalk of adjacent NV centers 210 is further suppressed to below 0.1%, meeting the requirements of high-fidelity quantum readout.

[0080] In terms of microwave manipulation, the near-field magnetic field generated by the loop microwave antenna 121 at 2.87 GHz exhibits excellent spatial selectivity. Without electromagnetic shielding, microwave crosstalk between adjacent loop microwave antennas 121 is approximately -15 dB; however, after introducing a nickel-chromium alloy or copper metal shielding ring 122 and grounding it, the microwave crosstalk is significantly reduced to below -30 dB (i.e., power coupling coefficient less than 0.1%). This result verifies the effectiveness of the image current cancellation mechanism in the above embodiment. Combined with the frequency-selective addressing strategy, even with an extremely small spacing of 50 nm, independent π-pulse flipping of the spin state of a single NV color center 210 can still be achieved, with Rabi oscillation contrast maintained above 90%, demonstrating the high purity and low interference characteristics of the microwave channel.

[0081] The NV center array addressing device and method provided by the embodiments of the present invention, by employing an optical field localization array corresponding to the NV center to localize the incident light field into a nanoscale local electric field to excite the target NV center and collect fluorescence signals, and by employing a microwave control array corresponding to the NV center to apply a near-field microwave magnetic field to the target NV center to manipulate its spin state, can overcome the limitation of addressing resolution imposed by the diffraction limit of traditional far-field optical systems, and effectively suppress microwave crosstalk between adjacent NV centers by utilizing the rapid spatial decay characteristics of the near-field microwave magnetic field, thereby achieving high-precision, high-fidelity independent addressing of each quantum bit in a high-density NV center array.

[0082] It should be noted that the term "comprising" and its variations used in the embodiments of this invention are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The modifications of "one" and "a plurality" mentioned in the embodiments of this invention are illustrative and not restrictive, and those skilled in the art should understand that unless explicitly indicated otherwise in the context, they should be understood as "one or more".

[0083] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in the embodiments of this invention are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions, and corresponding operation entry points are provided for users to choose to authorize or refuse.

[0084] The steps described in the method embodiments provided by the present invention can be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of protection of the present invention is not limited in this respect.

[0085] The term "embodiment" in this specification refers to a specific feature, structure, or characteristic described in connection with an embodiment that may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily imply the same embodiment, nor does it imply independence or alternativeity from other embodiments. The various embodiments in this specification are described in a related manner, with reference to each other for similar or identical parts. In particular, for apparatus, device, and system embodiments, since they are substantially similar to method embodiments, the description is relatively simple, and relevant details are referred to in the description of the method embodiments.

[0086] The above-described embodiments are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of protection. It should be noted that those skilled in the art can make various modifications and improvements without departing from the inventive concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the appended claims.

Claims

1. An NV color center array addressing device, characterized in that, include: The light field localization array includes multiple optical antenna units corresponding to the NV color centers in the NV color center array. The optical antenna units are configured to localize the incident light field into a local electric field to excite the target NV color center and collect the fluorescence signal emitted by the target NV color center. The microwave control array includes multiple microwave antenna elements corresponding to the NV color centers in the NV color center array. The microwave antenna elements are configured to apply a near-field microwave magnetic field to the target NV color center to manipulate the spin state of the target NV color center.

2. The NV color center array addressing device according to claim 1, characterized in that, The optical antenna unit includes a metal nanoantenna, which is configured to generate a localized surface plasmon resonance effect under the illumination of the incident light field, forming a localized electric field for pumping the target NV color center from the ground state to the excited state.

3. The NV color center array addressing device according to claim 2, characterized in that, The metal nanoantenna is configured as a bowtie antenna, which is disposed on top of the NV color center array. The bowtie antenna includes two metal nanostructures arranged opposite each other, each metal nanostructure having opposing tips, with a nano gap formed between the two tips.

4. The NV color center array addressing device according to claim 3, characterized in that, The width of the nanogap is 10 nm to 20 nm; and / or, the bowtie antenna is made of gold.

5. The NV color center array addressing device according to claim 2, characterized in that, The field enhancement factor of the metal nanoantenna is: In the formula: Indicates local electric field, Indicates the incident light field. Indicates the width of the nanometer gap. This represents the plasma resonance quality factor. This represents the wavelength of the incident light field.

6. The NV color center array addressing device according to claim 1, characterized in that, The microwave antenna unit is configured as a loop microwave antenna, and the loop microwave antenna is located at the bottom of the NV color center array; The loop microwave antenna is configured to apply a microwave magnetic field that matches the crystallographic orientation of the target NV color center to the target NV color center, and to selectively manipulate the spin state of the target NV color center based on the frequency of the microwave magnetic field, wherein the frequency of the microwave magnetic field is set based on the Zeeman resonance frequency of the target NV color center.

7. The NV color center array addressing device according to claim 6, characterized in that, The frequency range of the microwave magnetic field is 2.5 GHz to 3.5 GHz.

8. The NV color center array addressing device according to claim 6, characterized in that, The device also includes an electromagnetic shielding structure, which is disposed on the outer periphery of the ring microwave antenna. The electromagnetic shielding structure is configured to generate a mirror magnetic field through induced eddy currents, thereby suppressing the leakage electromagnetic radiation of the ring microwave antenna.

9. The NV color center array addressing device according to claim 8, characterized in that, The electromagnetic shielding structure is made of nickel-chromium alloy or copper; and / or, the electromagnetic shielding structure is grounded.

10. The NV color center array addressing device according to claim 1, characterized in that, The device further includes a crosstalk compensation module, which is configured to apply a crosstalk compensation signal to the adjacent optical antenna elements of the optical antenna element corresponding to the target NV color center based on a pre-calibrated crosstalk coefficient matrix, so as to cancel the residual crosstalk of the adjacent optical antenna elements to the target NV color center.

11. The NV color center array addressing device according to claim 10, characterized in that, The mathematical expression for the crosstalk compensation signal is: In the formula, This indicates the applied compensation signal. Represents the crosstalk coefficient. Indicates the original control signal. and This indicates the number of the optical antenna element and the NV color center.

12. The NV color center array addressing device according to claim 1, characterized in that, The device further includes a CMOS driving circuit, and each of the microwave antenna elements is connected to the CMOS driving circuit through a through-silicon via. The CMOS driving circuit is configured to inject microwave signals into the microwave antenna elements through the through-silicon vias to form a near-field microwave magnetic field through the microwave antenna elements.

13. An NV color center array addressing method, characterized in that, include: The incident light field is localized into a local electric field by an optical field localization array, and the target NV color center is excited by the local electric field to initialize the spin of the target NV color center to the ground state. A near-field microwave magnetic field is applied to the target NV color center by a microwave control array to manipulate the ground state spin of the target NV color center; The target NV center is re-excited based on the local electric field, and the fluorescence signal emitted by the target NV center is received through the optical field localization array to read out the spin state of the target NV center.

Images