Image sensor and electronic device including the same

Abstract

An image sensor and an electronic device including the image sensor are provided. The image sensor includes: a nanophotonic lens array, the nanophotonic lens array comprising unit elements, each unit element comprising a first element region, a second element region, a third element region, and a fourth element region, each of the first to fourth element regions comprising a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region, each of the first to fourth sub-regions having at least one nanostructure disposed therein, in the first to fourth element regions of the peripheral elements surrounding the nanophotonic lens array, as the azimuth angle of the peripheral elements increases from 0 degrees to 90 degrees, the distance by which the nanostructures of the first and second sub-regions are offset in a first direction decreases, and as the azimuth angle of the peripheral elements increases from 0 degrees to 90 degrees, the distance by which the nanostructures of the first and third sub-regions are offset in a second direction increases.

Description

Technical Field

[0001] This disclosure relates to an image sensor including a nanophotonic lens array and an electronic device including the image sensor. Background Technology

[0002] Image sensors typically sense the color of incident light using color filters. However, color filters can have low light utilization efficiency because they absorb light of colors other than their corresponding colors. For example, when using a red-green-blue (RGB) color filter, only 1 / 3 of the incident light passes through, while the remaining 2 / 3 is absorbed. Therefore, the light utilization efficiency is only about 33%. A significant portion of the light loss in an image sensor occurs within the color filter. Therefore, a method is sought to separate colors into each pixel of an image sensor without using color filters. Summary of the Invention

[0003] An image sensor is provided, comprising an array of nanophotonic lenses capable of separating and focusing incident light according to wavelength.

[0004] An image sensor comprising a nanophotonic lens array is provided, which has low performance variation according to the principal ray angle (CRA).

[0005] Other aspects will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0006] According to one aspect of this disclosure, an image sensor is provided, comprising: a sensor substrate including a plurality of unit pixel groups, each of the plurality of unit pixel groups including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nanophotonic lens array including a plurality of nanostructures configured to separate incident light according to wavelength and focus the incident light onto the first pixel, the second pixel, the third pixel, and the fourth pixel, respectively, wherein the nanophotonic lens array includes a plurality of unit groups, each of the plurality of unit groups including a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel, wherein each of the first element region, the second element region, the third element region, and the fourth element region includes a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region, wherein at least one nanostructure may be provided in each of the first sub-region, the second sub-region, the third sub-region, and the fourth sub-region. In the array, multiple unit tuples include a central tuple located at the center of the nanophotonic lens array and multiple peripheral tuples located at the periphery of the nanophotonic lens array. In the first, second, third, and fourth element regions of the multiple peripheral tuples, the nanostructure of the first sub-region and the nanostructure of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset in the first direction with opposite displacements. The nanostructure of the first sub-region and the nanostructure of the third sub-region adjacent to the first sub-region in a second direction are symmetrically offset in the second direction with opposite displacements. As the azimuth angle of the corresponding one of the multiple peripheral tuples increases from 0 degrees to 90 degrees, the first distance offset by the nanostructures of the first and second sub-regions in the first direction decreases, and as the azimuth angle of the corresponding one of the multiple peripheral tuples increases from 0 degrees to 90 degrees, the second distance offset by the nanostructures of the first and third sub-regions in the second direction increases.

[0007] Each of the first pixel, the second pixel, the third pixel, and the fourth pixel may include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel arranged in a two-dimensional array in the form of a 2×2 array, and each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel may be configured to independently sense incident light.

[0008] The multiple nanostructures of the nanophotonic lens array can have dimensions, cross-sectional shapes, heights, and arrangements for focusing light of a first wavelength band onto each of the first, second, third, and fourth sub-pixels of a first pixel and each of the first, second, third, and fourth sub-pixels of a fourth pixel, focusing light of a second wavelength band onto the first, second, third, and fourth sub-pixels of a second pixel, and focusing light of a third wavelength band onto the first, second, third, and fourth sub-pixels of a third pixel, and the first, second, third, and fourth sub-pixels of a third pixel, and the first, second, and third wavelength bands can be different from each other.

[0009] Each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel may include a plurality of photosensitive units configured to independently sense light.

[0010] Compared to the first element region of the central tuple, the first element region of one or more of the peripheral tuples may be offset by a first displacement in a first direction and by a second displacement in a second direction; compared to the second element region of the central tuple, the second element region of one or more of the peripheral tuples may be offset by a third displacement in a first direction and by a fourth displacement in a second direction; compared to the third element region of the central tuple, the third element region of one or more of the peripheral tuples may be offset by a fifth displacement in a first direction and by a sixth displacement in a second direction; and compared to the fourth element region of the central tuple, the fourth element region of one or more of the peripheral tuples may be offset by a seventh displacement in a first direction and by an eighth displacement in a second direction.

[0011] The gap between the first and second regions in a central tuple may differ from the gap between the first and second regions in one or more of the peripheral tuples. The gap between the first and third regions in a central tuple may differ from the gap between the first and third regions in one or more of the peripheral tuples. The gap between the second and fourth regions in a central tuple may differ from the gap between the second and fourth regions in one or more of the peripheral tuples. Alternatively, the gap between the third and fourth regions in a central tuple may differ from the gap between the third and fourth regions in one or more of the peripheral tuples.

[0012] The gap between the first nanostructure in the first region of the central tuple and the second nanostructure in the second region of the central tuple may be different from the gap between the third nanostructure in the first region of the first peripheral tuple located at the same position as the first nanostructure of the central tuple and the fourth nanostructure in the first peripheral tuple located at the same position as the second nanostructure of the central tuple.

[0013] Multiple peripheral elements may include a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and the gap between the first nanostructure in the first element region of the first peripheral element and the second nanostructure in the second element region of the first peripheral element may be different from the gap between the third nanostructure in the first element region of the second peripheral element located at the same position relative to the first nanostructure of the first peripheral element and the fourth nanostructure in the second element region of the second peripheral element located at the same position relative to the second nanostructure of the first peripheral element.

[0014] Each of the multiple unit tuples may include a boundary nanostructure located at the boundaries of all first, second, third, and fourth unit regions, and the boundary nanostructure in one or more of the multiple peripheral tuples may be offset by the average of the first, second, third, fourth, fifth, sixth, seventh, and eighth displacements.

[0015] The gap in the first direction between the first and second sub-regions in the first region of the central tuple may be different from the gap in the first direction between the first and second sub-regions in the first region of the central tuple. The gap in the first direction between the third and fourth sub-regions in the first region of the central tuple may be different from the gap in the first direction between the third and fourth sub-regions in the first region of the first peripheral tuple.

[0016] The gap between the first and third sub-regions in the first element region of the central tuple in the second direction intersecting the first direction can be the same as the gap between the first and third sub-regions in the first element region of the first peripheral tuple in the second direction, and the gap between the second and fourth sub-regions in the first element region of the central tuple in the second direction can be the same as the gap between the second and fourth sub-regions in the first element region of the first peripheral tuple in the second direction.

[0017] The gap between the first and third sub-regions in the first element region of the central element in the second direction intersecting the first direction may be different from the gap between the first and third sub-regions in the first element region of the second peripheral element set at an azimuth angle of 90 degrees in the second element region of the multiple peripheral elements, and the gap between the second and fourth sub-regions in the first element region of the central element in the second direction may be different from the gap between the second and fourth sub-regions in the first element region of the second peripheral element in the second direction.

[0018] The gap in the first direction between the first and second sub-regions in the first region of the central tuple can be the same as the gap in the first direction between the first and second sub-regions in the first region of the second peripheral tuple. The gap in the first direction between the third and fourth sub-regions in the first region of the central tuple can be the same as the gap in the first direction between the third and fourth sub-regions in the first region of the second peripheral tuple.

[0019] The gap between the first nanostructure in the first sub-region of the first elemental region of the central element and the second nanostructure in the second sub-region of the first elemental region of the central element can be different from the gap between the third nanostructure in the first elemental region of the first peripheral element, which is located at the same position relative to the first nanostructure of the central element, and the fourth nanostructure in the first elemental region of the first peripheral element, which is located at the same position relative to the second nanostructure of the central element.

[0020] Multiple peripheral elements may include a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and the gap between the first nanostructure of the first sub-region of the first element of the first peripheral element and the second nanostructure of the second sub-region of the first element of the first peripheral element may be different from the gap between the third nanostructure in the first element of the second peripheral element located at the same position relative to the first nanostructure of the first peripheral element and the fourth nanostructure in the first element of the second peripheral element located at the same position relative to the second nanostructure of the first peripheral element.

[0021] Each of the multiple unit tuples may include a boundary nanostructure located at the boundary of all first sub-regions, second sub-regions, third sub-regions, and fourth sub-regions in the first unit region, and the gap between the boundary nanostructure of the central tuple and the first nanostructure within the first sub-region of the first unit region of the central tuple may be different from the gap between the boundary nanostructure of the first peripheral tuple in the multiple peripheral tuples and the second nanostructure of the first peripheral tuple located at the same position relative to the first nanostructure of the central tuple.

[0022] Multiple peripheral elements may include a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and the gap between the boundary nanostructure of the first peripheral element and the first nanostructure within the first sub-region of the first element region of the first peripheral element may be different from the gap between the boundary nanostructure of the second peripheral element and the second nanostructure of the second peripheral element located at the same position relative to the first nanostructure of the first peripheral element.

[0023] Each of the multiple unit tuples may include a boundary nanostructure located at the boundary between the third and fourth sub-regions in the first unit region, and the gap in the first direction between the boundary nanostructure of the central tuple and the first nanostructure in the third sub-region of the first unit region of the central tuple may be different from the gap in the first direction between the boundary nanostructure of the first peripheral tuple and the second nanostructure of the first peripheral tuple located at the same position relative to the first nanostructure of the central tuple.

[0024] The first and fourth element regions are symmetrically offset from each other about ±45 degrees in one or more of the multiple outer elements.

[0025] According to another aspect of this disclosure, an electronic device may be provided, the electronic device comprising: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and a processor configured to process the electrical signal generated by the image sensor, wherein the image sensor includes a plurality of unit pixel groups, each of the plurality of unit pixel groups including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nanophotonic lens array including a plurality of nanostructures configured to separate incident light according to wavelength and focus the incident light onto the first pixel, the second pixel, the third pixel, and the fourth pixel respectively, wherein the nanophotonic lens array includes a plurality of unit elements, each of the plurality of unit elements including a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel, wherein each of the first element region, the second element region, the third element region, and the fourth element region includes a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region, wherein at least one nano-... The structure can be provided in each of the first, second, third, and fourth sub-regions, wherein the plurality of unit tuples includes a central tuple located at the central portion of the nanophotonic lens array and a plurality of peripheral tuples located at the periphery of the nanophotonic lens array, wherein in the first, second, third, and fourth sub-regions of the plurality of peripheral tuples, the nanostructure of the first sub-region and the nanostructure of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset in the first direction with opposite displacements, and the nanostructure of the first sub-region and the nanostructure of the third sub-region adjacent to the first sub-region in a second direction are symmetrically offset in the second direction with opposite displacements, wherein as the azimuth angle of the corresponding one of the plurality of peripheral tuples increases from 0 degrees to 90 degrees, the first distance offset by the nanostructure of the first sub-region and the nanostructure of the second sub-region in the first direction decreases, and as the azimuth angle of the corresponding one of the plurality of peripheral tuples increases from 0 degrees to 90 degrees, the second distance offset by the nanostructure of the first sub-region and the nanostructure of the third sub-region in the second direction increases. Attached Figure Description

[0026] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0027] Figure 1 This is a schematic block diagram of an image sensor according to an embodiment;

[0028] Figure 2A and Figure 2B This is a schematic cross-sectional view illustrating the structure of a pixel array in an image sensor according to an embodiment;

[0029] Figure 3 The pixel arrangement of a sensor substrate according to an embodiment is shown;

[0030] Figure 4 The pixel arrangement of a sensor substrate according to another embodiment is shown;

[0031] Figure 5 The pixel arrangement of a sensor substrate according to another embodiment is shown;

[0032] Figure 6 The color filter arrangement of the color filter layer according to an embodiment is shown;

[0033] Figure 7 The arrangement of the meta-regions of a nanophotonic lens array according to an embodiment is shown;

[0034] Figure 8 An arrangement of multiple nanostructures in a unit cell of a nanophotonic lens array according to an embodiment is shown;

[0035] Figure 9A The phase distribution of blue light passing through a nanophotonic lens array is shown. Figure 9B The phase distribution of green light passing through the nanophotonic lens array is shown. Figure 9C The phase distribution of red light passing through a nanophotonic lens array is shown;

[0036] Figure 10 This is a cross-sectional view showing the phase distribution and focusing effect of red light through a nanophotonic lens array according to an embodiment;

[0037] Figure 11A The image shows the area where blue light is concentrated, formed on the sensor substrate. Figure 11B The region of green light concentration formed on the sensor substrate is shown, and Figure 11C The region where red light is concentrated, formed on the sensor substrate, is shown;

[0038] Figure 12 This is a cross-sectional view showing the offset of the element region of the nanophotonic lens array at the periphery of the array.

[0039] Figure 13 The offset direction of the unit element of the nanophotonic lens array is shown based on the azimuth position of the periphery of the nanophotonic lens array.

[0040] Figure 14 The offset of each element region within the outermost tuple of the nanophotonic lens array is shown;

[0041] Figure 15 and Figure 16The relative displacements of subregions within the first elemental region at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array are shown respectively.

[0042] Figure 17 and Figure 18 The relative displacements of subregions in the second-dimensional region at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array are shown respectively.

[0043] Figure 19 and Figure 20 The relative displacements of sub-regions in the third-dimensional region at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array are shown respectively.

[0044] Figure 21 and Figure 22 The relative displacements of subregions in the fourth-element region at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array are shown respectively.

[0045] Figure 23 The relationship between offset distance and azimuth angle of sub-regions within the outermost tuple of the nanophotonic lens array is shown;

[0046] Figure 24 This is a cross-sectional view showing the phase distribution and focusing effect of the red light generated by the nanophotonic lens array at the periphery of the array.

[0047] Figure 25 This is a cross-sectional view showing the meta-region of the nanophotonic lens array at the periphery of the nanophotonic lens array and the offset of the color filter in the color filter layer according to another embodiment;

[0048] Figure 26 This is a cross-sectional view showing the meta-region of the nanophotonic lens array at the periphery of the nanophotonic lens array and the offset of the color filter in the color filter layer according to another embodiment;

[0049] Figure 27 This is a block diagram of an electronic device including an image sensor according to an embodiment;

[0050] Figure 28 yes Figure 27 A block diagram of the camera module in the image;

[0051] Figure 29 It is a block diagram of an electronic device including a multi-camera module; and

[0052] Figure 30 yes Figure 29 Detailed block diagram of a multi-camera module in an electronic device. Detailed Implementation

[0053] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain various aspects. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…” modify the entire column of elements, rather than a single element within that column, when following a list of elements.

[0054] In the following, an image sensor including a nanophotonic lens array and an electronic device including the image sensor will be described in detail with reference to the accompanying drawings. The embodiments described herein are subject to various modifications and can be embodied in many different forms. In the drawings, the same reference numerals denote the same elements, and for ease of explanation, the dimensions of the elements in the drawings may be exaggerated.

[0055] In the example where a layer, film, region, or panel is referred to as being "above / below" another element, it can be directly above / below / left / right of another layer or substrate, or an intermediate layer may also exist.

[0056] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various elements, these terms are only used to distinguish one element from another. These terms do not limit the elements to being different in material or structure.

[0057] Unless they have a distinctly different meaning in the context, expressions used in the singular include expressions used in the plural. It will be further understood that when a part is said to "include" another element, that part may not exclude the other element, but may further include it, unless the context otherwise indicates.

[0058] Furthermore, terms such as “…unit” and “module” used in this document refer to units that perform functions or operations and can be implemented by hardware, software, or a combination of hardware and software.

[0059] The use of the term "the" and similar indicative terms can correspond to both the singular and plural forms.

[0060] Furthermore, unless otherwise stated herein or clearly contradicted by the context, all methods described herein may be performed in any suitable order. Additionally, all exemplary terms (e.g., etc.) are used only to describe the spirit of the art, and the scope of the claims is not limited by these terms unless the context is limited by the claims.

[0061] Figure 1 This is a schematic block diagram of an image sensor 1000 according to an embodiment. (Refer to...) Figure 1 The image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a line decoder 1020, and an output circuit 1030. The image sensor 1000 may be a charge-coupled device (CCD) image sensor or a complementary metal-oxide-semiconductor (CMOS) image sensor.

[0062] Pixel array 1100 includes a plurality of pixels PX arranged in a two-dimensional configuration of multiple rows and columns. Row decoder 1020 selects a row in pixel array 1100 based on (or in response to) a row address signal output from T / C 1010. Output circuit 1030 outputs photosensitive signals from the plurality of pixels PX arranged in the selected row, column by column. For this purpose, output circuit 1030 may include column decoder and analog-to-digital converter (ADC). For example, output circuit 1030 may include multiple ADCs arranged in columns between column decoder and pixel array 1100, or a single ADC at the output of column decoder. T / C 1010, row decoder 1020, and output circuit 1030 may be implemented as a single chip or in separate chips. A processor for processing the image signals output from output circuit 1030 may be implemented as a single chip along with T / C 1010, row decoder 1020, and output circuit 1030.

[0063] Figure 2A and Figure 2B This is a schematic cross-sectional view illustrating the structure of the pixel array 1100 in the image sensor 1000 according to an embodiment. Figure 2A A cross-section of the pixel array 1100 in a first direction (e.g., the X-axis direction) is shown, and Figure 2B It shows that in relation to Figure 2A The cross-section of the pixel array 1100 at different positions along a second direction perpendicular to the first direction (e.g., the Y-axis direction) is a cross-section of the pixel array 1100 in the first direction (e.g., the X-axis direction). (Refer to...) Figure 2A and Figure 2BThe pixel array 1100 may include a sensor substrate 110, a color filter layer 120 disposed on the sensor substrate 110, a spacer layer 130 disposed on the color filter layer 120, and a nanophotonic lens array 140 disposed on the spacer layer 130. Furthermore, the pixel array 1100 may include an anti-reflection layer 150 disposed on the nanophotonic lens array 140. The color filter layer 120 may be disposed between the sensor substrate 110 and the nanophotonic lens array 140 in a third direction (e.g., the Z-axis direction) perpendicular to the first and second directions. The spacer layer 130 may be disposed between the color filter layer 120 and the nanophotonic lens array 140 in a third-direction orientation. The nanophotonic lens array 140 may be disposed between the spacer layer 130 and the anti-reflection layer 150 in a third-direction orientation.

[0064] According to an embodiment, the pixel array 1100 may further include an etch stop layer disposed between the spacer layer 130 and the nanophotonic lens array 140. The etch stop layer can prevent the spacer layer 130 from being etched during the process of forming the nanophotonic lens array 140 on the spacer layer 130.

[0065] Figure 3 The pixel arrangement of the sensor substrate 110 according to an embodiment is shown. (Refer to...) Figure 3 The sensor substrate 110 may include a plurality of unit pixel groups 110G arranged in two dimensions in a first direction and a second direction. According to an embodiment, a unit pixel group 110G of the sensor substrate 110 may include a first pixel 111, a second pixel 112, a third pixel 113, and a fourth pixel 114. The first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 may be arranged in a two-dimensional array in the first and second directions. A plurality of first pixels 111 and a plurality of second pixels 112 may be alternately arranged in a row along the first direction on the sensor substrate 110, and a plurality of third pixels 113 and a plurality of fourth pixels 114 may be alternately arranged in a row along the first direction, with different positions in the second direction perpendicular to the first direction. Furthermore, a plurality of first pixels 111 and a plurality of fourth pixels 114 may be alternately arranged in a first diagonal direction, and a plurality of second pixels 112 and a plurality of third pixels 113 may be alternately arranged in a second diagonal direction intersecting the first diagonal direction.

[0066] First pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 can sense different colors of light. In one example, first pixel 111 and fourth pixel 114 can be green pixels that sense green light, second pixel 112 can be blue pixels that sense blue light, and third pixel 113 can be red pixels that sense red light. In another example, first pixel 111 and fourth pixel 114 can be yellow pixels that sense yellow light (or yellow-based light), second pixel 112 can be blue pixels that sense blue light, and third pixel 113 can be red pixels that sense red light. In yet another example, first pixel 111 and fourth pixel 114 can be yellow pixels, second pixel 112 can be cyan pixels that sense cyan (or cyan-based) light, and third pixel 113 can be magenta pixels that sense magenta (or magenta-based) light.

[0067] Each of the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may include sub-pixels grouped and arranged in a 2×2 array in a first direction and a second direction. For example, the first pixel 111 may include a first sub-pixel P1, a second sub-pixel P2, a third sub-pixel P3, and a fourth sub-pixel P4, which are grouped and arranged in a two-dimensional 2×2 array in both the first and second directions. The first sub-pixel P1 may contact the second sub-pixel P2 in the first direction and the third sub-pixel P3 in the second direction. The second sub-pixel P2 may contact the fourth sub-pixel P4 in the second direction, and the third sub-pixel P3 may contact the fourth sub-pixel P4 in the first direction. Similarly, each of the second pixel 112, the third pixel 113, and the fourth pixel 114 may include the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4.

[0068] The first sub-pixel P1, second sub-pixel P2, third sub-pixel P3, and fourth sub-pixel P4 of each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 can be configured to independently sense incident light. According to an example embodiment, a color image can be obtained in two different ways. In the example, each of the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3, and fourth sub-pixel P4 can operate as an independent channel. In this case, each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 can have four independent channels, and a unit pixel group 110G can output 16 independent signals. For example, the first pixel 111 can have four independent green channels, the second pixel 112 can have four independent blue channels, the third pixel 113 can have four independent red channels, and the fourth pixel 114 can have four independent green channels. During image signal processing, the processor can individually use the signals output from the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 to perform operations, such as noise reduction, color correction, etc., and generate a color image. In this example, the processor may be included in the image sensor 1000, or it may be a component included in an electronic device that includes the image sensor 1000.

[0069] In another example, a binning mode operation can be performed to increase sensitivity in low-light environments. Binning mode is an image processing method that adds the outputs of first sub-pixels P1, P2, P3, and P4. For example, a first green image signal can be generated by summing the output signals of the first sub-pixels P1, P2, P3, and P4 of the first pixel 111; a blue image signal can be generated by summing the output signals of the first sub-pixels P1, P2, P3, and P4 of the second pixel 112; a red image signal can be generated by summing the output signals of the first sub-pixels P1, P2, P3, and P4 of the third pixel 113; and a second green image signal can be generated by summing the output signals of the first sub-pixels P1, P2, P3, and P4 of the fourth pixel 114. The processor can generate a color image by performing image signal processing on the summed image signals.

[0070] In a high-illumination environment, the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 can each individually output a first green image signal. Therefore, the first pixel 111 can output four first green image signals with different spatial information. Similarly, the second pixel 112 can output four blue image signals with different spatial information from the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4, respectively; the third pixel 113 can output four red image signals with different spatial information from the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4, respectively; and the fourth sub-pixel 114 can output four second green image signals with different spatial information from the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4, respectively.

[0071] Figure 4 The pixel arrangement of a sensor substrate 110 according to another embodiment is shown. For convenience, Figure 4 Only one unit pixel group, 110G, is shown. Like... Figure 3 Similarly, the sensor substrate 110 may include multiple unit pixel groups 110G arranged in a two-dimensional manner. (See reference...) Figure 4 Each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 may include a first photosensitive unit PD1 and a second photosensitive unit PD2 that independently sense incident light. For example, in each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4, the first photosensitive unit PD1 and the second photosensitive unit PD2 may be arranged adjacent to each other in a first direction. In this case, an autofocus signal can be obtained from the difference between the output signals of the first photosensitive unit PD1 and the second photosensitive unit PD2. A general image signal can be obtained by summing the output signals of the first photosensitive unit PD1 and the second photosensitive unit PD2, or by treating each of the output signals of the first photosensitive unit PD1 and the second photosensitive unit PD2 as a separate image signal.

[0072] Figure 5 The pixel arrangement of a sensor substrate 110 according to another embodiment is shown. For convenience, Figure 5 Only one unit pixel group, 110G, is shown. Like... Figure 3 Similarly, the sensor substrate 110 may include multiple unit pixel groups 110G arranged in a two-dimensional manner. (See reference...) Figure 5Each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 may include multiple photosensitive units, which are grouped and arranged in a two-dimensional 2×2 array in a first direction and a second direction. For example, each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 may include a first photosensitive unit PD1, a second photosensitive unit PD2, a third photosensitive unit PD3, and a fourth photosensitive unit PD4 arranged in a two-dimensional 2×2 array. Each of the first photosensitive unit PD1, the second photosensitive unit PD2, the third photosensitive unit PD3, and the fourth photosensitive unit PD4 can independently sense incident light.

[0073] Figure 4 and Figure 5 The illustration shows that each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 includes two or four photosensitive units, but this disclosure is not limited thereto. Depending on the needs of the image sensor 1000, each of the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 may include a variety of different numbers of photosensitive units.

[0074] According to an embodiment, various autofocus signals can be obtained from the differences between the output signals of adjacent photosensitive units using a phase detection method. For example, an autofocus signal in a first direction can be generated based on the differences between the output signals of the first photosensitive unit PD1 and the second photosensitive unit PD2, the differences between the output signals of the third photosensitive unit PD3 and the fourth photosensitive unit PD4, or the differences between the sum of the output signals of the first and third photosensitive units PD1 and PD3 and the sum of the output signals of the second and fourth photosensitive units PD2 and PD4. Furthermore, an autofocus signal in a second direction can be generated based on the differences between the output signals of the first and third photosensitive units PD1 and PD3, the differences between the output signals of the second and fourth photosensitive units PD2 and PD4, or the differences between the sum of the output signals of the first and second photosensitive units PD1 and PD2 and the sum of the output signals of the third and fourth photosensitive units PD3 and PD4.

[0075] Figure 6 The color filter arrangement of the color filter layer 120 according to an embodiment is shown. (Refer to...) Figure 6The color filter layer 120 may include a plurality of unit color filter groups 120G arranged two-dimensionally in a first direction and a second direction. Each unit color filter group 120G may include a plurality of color filters disposed between the sensor substrate 110 and the nanophotonic lens array 140 to transmit light in a specific wavelength band and absorb light in another wavelength band. For example, each unit color filter group 120G may include: a first color filter 121 that transmits light in a first wavelength band and absorbs light in another wavelength band; a second color filter 122 that transmits light in a second wavelength band different from the first wavelength band and absorbs light in another wavelength band; a third color filter 123 that transmits light in a third wavelength band different from the first and second wavelength bands and absorbs light in another wavelength band; and a fourth color filter 124 that transmits light in the first wavelength band and absorbs light in another wavelength band. The first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124 may be grouped and arranged in a 2×2 array in the first and second directions. For example, the first color filter 121 may contact the second color filter 122 in a first direction and the third color filter 123 in a second direction. The second color filter 122 may contact the fourth color filter 124 in a second direction, and the third color filter 123 may contact the fourth color filter 124 in a first direction.

[0076] Multiple first color filters 121 and multiple second color filters 122 can be arranged alternately in a row along a first direction on the color filter layer 120, and multiple third color filters 123 and multiple fourth color filters 124 can be arranged alternately in rows with different positions in a second direction along the first direction. Additionally, multiple first color filters 121 and multiple fourth color filters 124 can be arranged alternately along a first diagonal direction, and multiple second color filters 122 and multiple third color filters 123 can be arranged alternately along a second diagonal direction intersecting the first diagonal direction.

[0077] The first color filter 121 can be configured to face the first pixel 111 in the third direction (Z-axis direction), the second color filter 122 can be configured to face the second pixel 112 in the third direction, the third color filter 123 can be configured to face the third pixel 113 in the third direction, and the fourth color filter 124 can be configured to face the fourth pixel 114 in the third direction. Therefore, the first pixel 111 can sense light that has passed through the first wavelength band of the first color filter 121. The second pixel 112 can sense light that has passed through the second wavelength band of the second color filter 122, the third pixel 113 can sense light that has passed through the third wavelength band of the third color filter 123, and the fourth pixel 114 can sense light that has passed through the first wavelength band of the fourth color filter 124.

[0078] For example, the first color filter 121 and the fourth color filter 124 can be green color filters that transmit green light, the second color filter 122 can be blue color filters that transmit blue light, and the third color filter 123 can be red color filters that transmit red light. In another example, the first color filter 121 and the fourth color filter 124 can be yellow color filters that transmit yellow light (or yellow-based light), the second color filter 122 can be blue color filters, and the third color filter 123 can be red color filters. In yet another example, the first color filter 121 and the fourth color filter 124 can be yellow color filters, the second color filter 122 can be cyan color filters, and the third color filter 123 can be magenta color filters.

[0079] Figure 6 The dashed lines shown indicate the separators between the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4. Figure 6 As shown, the first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124 can be configured in a third-order orientation to face all sub-pixels of their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. In other words, the first color filter 121 can cover all sub-pixels of the first pixel 111, the second color filter 122 can cover all sub-pixels of the second pixel 112, the third color filter 123 can cover all sub-pixels of the third pixel 113, and the fourth color filter 124 can cover all sub-pixels of the fourth pixel 114.

[0080] Each of the first color filter 121, second color filter 122, third color filter 123, and fourth color filter 124 in the color filter layer 120 may include, for example, an organic polymer material. For example, each of the first color filter 121, second color filter 122, third color filter 123, and fourth color filter 124 may include a colorant, adhesive resin, polymeric photoresist, etc. The first color filter 121 and fourth color filter 124 may be organic color filters including green organic dyes or green organic pigments as colorants, the second color filter 122 may be an organic color filter including blue organic dyes or blue organic pigments as colorants, and the third color filter 123 may be an organic color filter including red organic dyes or red organic pigments as colorants. Although not explicitly stated in the original text... Figure 2A , Figure 2B and Figure 6 As shown, however, the color filter layer 120 may also include a black matrix disposed at the boundaries between the first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124. The black matrix may include, for example, carbon black.

[0081] Return to reference Figure 2A and Figure 2BA spacer layer 130 disposed between the color filter layer 120 and the nanophotonic lens array 140 can provide a flat surface for forming the nanophotonic lens array 140 on the spacer layer 130. The spacer layer 130 may comprise an organic polymer material adapted to be stacked on the color filter layer 120 comprising organic materials and readily forming a flat surface. The organic polymer material forming the spacer layer 130 may be transparent relative to visible light. For example, the spacer layer 130 may comprise at least one organic polymer material selected from epoxy resin, polyimide, polycarbonate, polyacrylate, or polymethyl methacrylate (PMMA). The spacer layer 130 may be formed on the color filter layer 120 by, for example, spin coating and may have a flat upper surface by heat treatment. However, this disclosure is not limited thereto; therefore, according to another embodiment, the spacer layer 130 may comprise an inorganic material. For example, the spacer layer 130 may include a dielectric material, such as spin-coated glass based on siloxane (SOG), SiO2, Si3N4, Al2O3, etc., which has a lower refractive index than the nanostructure NP described below and has a low absorption rate in the visible light wavelength band.

[0082] Furthermore, the spacer layer 130 can be used to maintain a constant distance or gap between the sensor substrate 110 and the nanophotonic lens array 140. Additionally, the spacer layer 130 can provide sufficient distance for light to be color-separated by the nanophotonic lens array 140. For example, the thickness of the spacer layer 130 can be approximately 0.25 times or more and approximately 0.5 times or less the spacing between each pixel.

[0083] The nanophotonic lens array 140 can be disposed on the spacer layer 130. Although Figure 2A and Figure 2B The nanophotonic lens array 140 is shown to be directly disposed on the spacer layer 130, but an etch stop layer can be disposed on the spacer layer 130 to prevent the spacer layer 130 from being damaged during the formation of the nanophotonic lens array 140, and the nanophotonic lens array 140 can be disposed on the etch stop layer.

[0084] Figure 7 The arrangement of the meta-regions of the nanophotonic lens array 140 according to an embodiment is shown. (Refer to...) Figure 7The nanophotonic lens array 140 may include a plurality of unit pixels 110G arranged in two dimensions in a first direction and a second direction. Each of the plurality of unit pixels 110G may include a first pixel region 141, a second pixel region 142, a third pixel region 143, and a fourth pixel region 144. The first pixel region 141, the second pixel region 142, the third pixel region 143, and the fourth pixel region 144 may be grouped and arranged in a 2×2 array in the first direction and the second direction. For example, the first pixel region 141 may contact the second pixel region 142 in the first direction and contact the third pixel region 143 in the second direction. The second pixel region 142 may contact the fourth pixel region 144 in the second direction, and the third pixel region 143 may contact the fourth pixel region 144 in the first direction.

[0085] Multiple first-element regions 141 and multiple second-element regions 142 can be alternately arranged in a row in a first direction on the nanophotonic lens array 140, and multiple third-element regions 143 and multiple fourth-element regions 144 can be alternately arranged in a row with different positions in a second direction in the first direction. Additionally, multiple first-element regions 141 and multiple fourth-element regions 144 can be alternately arranged in a first diagonal direction, and multiple second-element regions 142 and multiple third-element regions 143 can be alternately arranged in a second diagonal direction intersecting the first diagonal direction.

[0086] The first meta-region 141 can be provided facing the first pixel 111 and the first color filter 121 in a third-party upward orientation. The second meta-region 142 can be configured to face the second pixel 112 and the second color filter 122 in a third-party upward orientation. The third meta-region 143 can be configured to face the third pixel 113 and the third color filter 123 in a third-party upward orientation. The fourth meta-region 144 can be configured to face the fourth pixel 114 and the fourth color filter 124 in a third-party upward orientation.

[0087] The nanophotonic lens array 140 can be configured to separate light of a first wavelength band from incident light incident on the nanophotonic lens array 140 and focus the separated light of the first wavelength band onto the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3 and fourth sub-pixel P4 of the first pixel 111 and the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3 and fourth sub-pixel P4 of the fourth pixel 114; separate light of a second wavelength band and focus the separated light of the second wavelength band onto the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3 and fourth sub-pixel P4 of the second pixel 112; and separate light of a third wavelength band and focus the separated light of the third wavelength band onto the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3 and fourth sub-pixel P4 of the third pixel 113. In other words, the nanophotonic lens array 140 can be configured such that light of the first wavelength band forms four concentration regions in the first pixel 111, light of the first wavelength band forms four concentration regions in the fourth pixel 114, light of the second wavelength band forms four concentration regions in the second pixel 112, and light of the third wavelength band forms four concentration regions in the third pixel 113.

[0088] The nanophotonic lens array 140 may include a plurality of nanostructures NP configured to perform the operations described above. Furthermore, the nanophotonic lens array 140 may also include a dielectric material DL filling the spaces between the plurality of nanostructures NP. Figure 8 The arrangement of a plurality of nanostructures NP in the unit group 140G of the nanophotonic lens array 140 according to an embodiment is shown.

[0089] Reference Figure 8Each of the first subregion 141, the second subregion 142, the third subregion 143, and the fourth subregion 144 may include a plurality of subregions grouped in a first direction and arranged in a two-dimensional 2×2 array. For example, the first subregion 141 may include a first subregion 141R1, a second subregion 141R2, a third subregion 141R3, and a fourth subregion 141R4 grouped in a two-dimensional 2×2 array. The first subregion 141R1 may be adjacent to the second subregion 141R2 in the first direction and to the third subregion 141R3 in the second direction, the second subregion 141R2 may be adjacent to the fourth subregion 141R4 in the second direction, and the third subregion 141R3 may be adjacent to the fourth subregion 141R4 in the first direction. The first sub-region 141R1 can contact the second sub-region 141R2 in a first direction and the third sub-region 141R3 in a second direction. The second sub-region 141R2 can contact the fourth sub-region 141R4 in the second direction, and the third sub-region 141R3 can contact the fourth sub-region 141R4 in the first direction. Additionally, the second sub-region 142 may include the first sub-region 142R1, the second sub-region 142R2, the third sub-region 142R3, and the fourth sub-region 142R4, which are grouped and arranged in a two-dimensional 2×2 array. The third sub-region 143 may include the first sub-region 143R1, the second sub-region 143R2, the third sub-region 143R3, and the fourth sub-region 143R4, which are grouped and arranged in a two-dimensional 2×2 array. Furthermore, the fourth sub-region 144 may include the first sub-region 144R1, the second sub-region 144R2, the third sub-region 144R3, and the fourth sub-region 144R4, which are grouped and arranged in a two-dimensional 2×2 array.

[0090] The first sub-region 141R1, second sub-region 141R2, third sub-region 141R3, and fourth sub-region 141R4 of the first meta-region 141 can be provided as first sub-pixels P1, P2, P3, and P4 of the first pixel 111, respectively, in a third-order direction. The first sub-regions 142R1, P2, P3, and P4 of the second meta-region 142 can be configured to face the first sub-pixels P1, P2, P3, and P4 of the second pixel 112, respectively, in a third-order direction. The first sub-regions 143R1, P2, P3, and P4 of the third meta-region 143 can be provided as first sub-pixels P1, P2, P3, and P4 of the third pixel 113, respectively, in a third-order direction. Additionally, the first sub-region 144R1, the second sub-region 144R2, the third sub-region 144R3, and the fourth sub-region 144R4 of the fourth sub-region 144 can be configured to face the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 of the fourth pixel 114 respectively in the third direction.

[0091] The first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 may each include a plurality of nanostructures NP arranged according to a specific rule, so as to concentrate the color-separated light as described above in the first sub-pixel P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 of the first pixel 111, the second pixel 112, the third pixel 113, and the fourth sub-pixel P4 of the fourth pixel 114 of the sensor substrate 110. Additionally, each of the first sub-regions 141R1, 141R2, 141R3, and 141R4 of the first meta-region 141, the first sub-regions 142R1, 142R2, 142R3, and 142R4 of the second meta-region 142, the first sub-regions 143R1, 143R2, 143R3, and 143R4 of the third meta-region 143, and the first sub-regions 144R1, 144R2, 144R3, and 144R4 of the fourth meta-region 144 may include at least one nanostructure NP.

[0092] Multiple nanostructures (NPs) can be arranged to alter the phase of transmitted light passing through the nanophotonic lens array 140 based on their positions on the array. The phase profile of the transmitted light achieved by the nanophotonic lens array 140 can be determined based on the size, cross-sectional shape, and height of each nanostructure NP, as well as the arrangement of the multiple nanostructure NPs. For example, the size can be the cross-sectional width or diameter. Furthermore, the behavior of light transmitted through the nanophotonic lens array 140 can be determined based on the phase profile. For example, multiple nanostructures (NPs) can be arranged to form a phase profile such that light transmitted through the nanophotonic lens array 140 is separated according to wavelength and focused onto the sub-pixels of the corresponding pixels.

[0093] The nanostructure NP can have dimensions (e.g., cross-sectional width or cross-sectional diameter) that are subwavelength. Subwavelength refers to a wavelength smaller than the wavelength band of light focused by the nanophotonic lens array 140. In instances where the incident light is visible light, the diameter of the cross-section of the nanostructure NP can have dimensions, for example, less than 400 nm, 300 nm, or 200 nm. The height of the nanostructure NP can be from about 300 nm to about 1500 nm and can be greater than the diameter of the cross-section.

[0094] Nanostructured NPs can include materials with relatively high refractive index and relatively low absorption rate in the visible light band compared to their surrounding materials. For example, nanostructured NPs can include c-Si, p-Si, a-Si, III-V compound semiconductors (GaP, GaN, GaAs, etc.), SiC, TiO2, SiN3, ZnS, ZnSe, Si3N4, and / or combinations thereof. The periphery of the nanostructured NP can be filled with a dielectric material DL that has a relatively low refractive index and relatively low absorption rate in the visible light band compared to the nanostructured NP. For example, the periphery of the nanostructured NP can be filled with SOG, SiO2, Si3N4, Al2O3, air, etc.

[0095] The refractive index of the high-refractive-index nanostructure NP can be about 2.0 or greater for light with a wavelength of approximately 630 nm, while the refractive index of the low-refractive-index dielectric material DL can be about 1.0 or greater but less than about 2.0 for light with a wavelength of approximately 630 nm. Furthermore, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric material DL can be about 0.5 or greater. The nanostructure NP, with its refractive index difference from the surrounding material, can alter the phase of light passing through it. This is due to the phase delay caused by the subwavelength shape and size of the nanostructure NP, and the degree of phase delay is determined by the detailed shape and size, arrangement, etc., of the nanostructure NP.

[0096] exist Figure 8 In the example shown, multiple nanostructures NP can be arranged in a double-symmetric structure within the first subregion 141. In other words, the multiple nanostructures NP within the first subregion 141 can be arranged to have mirror symmetry with respect to the center of the first subregion 141 in a first direction and a second direction. Furthermore, the nanostructures NP in the first subregion 141R1, the second subregion 141R2, the third subregion 141R3, and the fourth subregion 141R4 can be arranged to have mirror symmetry with respect to the boundaries of the other subregions adjacent to the first or second direction.

[0097] For example, the nanostructure NP in the first sub-region 141R1 and the nanostructure NP in the second sub-region 141R2 of the first sub-region 141 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 141R1 and the second sub-region 141R2. The nanostructure NP in the first sub-region 141R1 and the nanostructure NP in the third sub-region 141R3 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 141R1 and the third sub-region 141R3. The nanostructure NP in the second sub-region 141R2 and the nanostructure NP in the fourth sub-region 141R4 can be arranged to have mirror symmetry with respect to the boundary between the second sub-region 141R2 and the fourth sub-region 141R4. Furthermore, the nanostructure NP in the third sub-region 141R3 and the nanostructure NP in the fourth sub-region 141R4 can be arranged to have mirror symmetry with respect to the boundary between the third sub-region 141R3 and the fourth sub-region 141R4.

[0098] Furthermore, the nanostructures NP in the diagonally oriented sub-regions within the first sub-region 141 can be arranged with rotational symmetry relative to the center of the first sub-region 141. For example, the nanostructures NP in the first sub-region 141R1 and the fourth sub-region 141R4 can be arranged with 180-degree rotational symmetry relative to the center of the first sub-region 141. Similarly, the nanostructures NP in the second sub-region 141R2 and the third sub-region 141R3 can be arranged with 180-degree rotational symmetry relative to the center of the first sub-region 141.

[0099] The multiple nanostructures NPs arranged in the second subregion 142 can be arranged in a four-fold symmetry structure. In other words, the multiple nanostructures NPs within the second subregion 142 can be arranged to have mirror symmetry in the first direction, the second direction, and the two diagonal directions relative to the center of the second subregion 142. Furthermore, the nanostructures NPs in the first subregion 142R1, the second subregion 142R2, the third subregion 142R3, and the fourth subregion 142R4 can be arranged to have mirror symmetry with respect to the boundaries of other subregions adjacent in the first or second direction and the nanostructures NPs in other subregions adjacent in the first or second direction.

[0100] For example, the nanostructures NP in the first sub-region 142R1 and the second sub-region 142R2 of the second sub-region 142 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 142R1 and the second sub-region 142R2. The nanostructures NP in the first sub-region 142R1 and the nanostructures NP in the third sub-region 142R3 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 142R1 and the third sub-region 142R3. The nanostructures NP in the second sub-region 142R2 and the nanostructures NP in the fourth sub-region 142R4 can be arranged to have mirror symmetry with respect to the boundary between the second sub-region 142R2 and the fourth sub-region 142R4. Furthermore, the nanostructures NP in the third sub-region 142R3 and the nanostructures NP in the fourth sub-region 142R4 can be arranged to have mirror symmetry with respect to the boundary between the third sub-region 142R3 and the fourth sub-region 142R4.

[0101] Furthermore, the nanostructures NP in the diagonally facing sub-regions within the second sub-region 142 can be arranged with mirror symmetry relative to the center of the second sub-region 142. For example, the nanostructures NP in the first sub-region 142R1 and the fourth sub-region 142R4 can be arranged with mirror symmetry relative to the center of the second sub-region 142. Similarly, the nanostructures NP in the second sub-region 142R2 and the third sub-region 142R3 can be arranged with mirror symmetry relative to the center of the second sub-region 142.

[0102] Multiple nanostructures NPs arranged in the third-dimensional region 143 can be arranged in a four-fold symmetry structure. In other words, multiple nanostructures NPs within the third-dimensional region 143 can be arranged to have mirror symmetry with respect to the center of the third-dimensional region 143 in the first direction, the second direction, and both diagonal directions. Furthermore, nanostructures NPs in the first sub-region 143R1, the second sub-region 143R2, the third sub-region 143R3, and the fourth sub-region 143R4 can be arranged to have mirror symmetry with respect to the boundaries of other sub-regions adjacent to the first or second direction.

[0103] For example, the nanostructures NP in the first sub-region 143R1 and the second sub-region 143R2 of the third sub-region 143 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 143R1 and the second sub-region 143R2. The nanostructures NP in the first sub-region 143R1 and the nanostructures NP in the third sub-region 143R3 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 143R1 and the third sub-region 143R3. The nanostructures NP in the second sub-region 143R2 and the nanostructures NP in the fourth sub-region 143R4 can be arranged to have mirror symmetry with respect to the boundary between the second sub-region 143R2 and the fourth sub-region 143R4. Furthermore, the nanostructures NP in the third sub-region 143R3 and the nanostructures NP in the fourth sub-region 143R4 can be arranged to have mirror symmetry with respect to the boundary between the third sub-region 143R3 and the fourth sub-region 143R4.

[0104] Furthermore, the nanostructures NP in the diagonally facing sub-regions within the third-dimensional region 143 can be arranged with mirror symmetry relative to the center of the third-dimensional region 143. For example, the nanostructures NP in the first sub-region 143R1 and the fourth sub-region 143R4 can be arranged with mirror symmetry relative to the center of the third-dimensional region 143. Similarly, the nanostructures NP in the second sub-region 143R2 and the third sub-region 143R3 can be arranged with mirror symmetry relative to the center of the third-dimensional region 143.

[0105] The size and arrangement of the multiple nanostructures NP in the third-dimensional region 143 can differ from the size and arrangement of the multiple nanostructures NP in the second-dimensional region 142. For example, the cross-sectional diameter of the nanostructure NP located near the center of the second-dimensional region 142 can be different from the diameter of the nanostructure NP located near the center of the third-dimensional region 143. Furthermore, the number of nanostructures NP arranged in the second-dimensional region 142 and the number of nanostructures NP arranged in the third-dimensional region 143 can be different from each other. The positions of the nanostructures NP within the second-dimensional region 142 and the third-dimensional region 143 can also differ.

[0106] Multiple nanostructures NPs arranged in the fourth-element region 144 can be arranged in a double-symmetric structure. In other words, the multiple nanostructures NPs within the fourth-element region 144 can be arranged to have mirror symmetry with respect to the center of the fourth-element region 144 in a first direction and a second direction. Furthermore, the nanostructures NPs in the first sub-region 144R1, the second sub-region 144R2, the third sub-region 144R3, and the fourth sub-region 144R4 can be arranged to have mirror symmetry with respect to the boundaries of the other sub-regions adjacent to the first or second direction.

[0107] For example, the nanostructure NPs in the first sub-region 144R1 and the second sub-region 144R2 of the fourth sub-region 144 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 144R1 and the second sub-region 144R2. The nanostructure NPs in the first sub-region 144R1 and the third sub-region 144R3 can be arranged to have mirror symmetry with respect to the boundary between the first sub-region 144R1 and the third sub-region 144R3. The nanostructure NPs in the second sub-region 144R2 and the fourth sub-region 144R4 can be arranged to have mirror symmetry with respect to the boundary between the second sub-region 144R2 and the fourth sub-region 144R4. Furthermore, the nanostructure NPs in the third sub-region 144R3 and the fourth sub-region 144R4 can be arranged to have mirror symmetry with respect to the boundary between the third sub-region 144R3 and the fourth sub-region 144R4.

[0108] Furthermore, the nanostructures NP in the diagonally oriented sub-regions within the fourth element region 144 can be arranged with rotational symmetry relative to the center of the fourth element region 144. For example, the nanostructures NP in the first sub-region 144R1 and the nanostructures NP in the fourth sub-region 144R4 can be arranged with 180-degree rotational symmetry relative to the center of the fourth element region 144. The nanostructures NP in the second sub-region 144R2 and the nanostructures NP in the third sub-region 144R3 can also be arranged with 180-degree rotational symmetry relative to the center of the fourth element region 144. For example, the arrangement of multiple nanostructures NP in the fourth element region 144 can be rotated 90 degrees relative to the arrangement of multiple nanostructures NP in the first element region 141.

[0109] Figure 8 The nanostructure NP is shown to have a cylindrical shape, but the cross-sectional shape of the nanostructure NP is not limited to this. According to the design of the nanophotonic lens array 140, the nanostructure NP can have a cylindrical shape with various cross-sections, such as rectangular, triangular, cross-shaped, or elliptical shapes.

[0110] Figure 9A The phase distribution of blue light passing through the nanophotonic lens array 140 is shown. Figure 9B The phase distribution of green light passing through the nanophotonic lens array 140 is shown. Figure 9C The phase distribution of red light passing through the nanophotonic lens array 140 is shown. For convenience, Figure 9A , Figure 9B and Figure 9C Only one unit tuple 140G is shown.

[0111] refer to Figure 9A The phase delay of blue light in the transmitted light can be maximized in the second-dimensional region 142 immediately following the incident light passing through the nanophotonic lens array 140 (i.e., at the lower surface of the nanophotonic lens array 140). For example, the phase delay of blue light can be maximized at the center of each of the first sub-regions 142R1, 142R2, 142R3, and 142R4 of the second-dimensional region 142. The phase delay of blue light can decrease away from the center of each of the first sub-regions 142R1, 142R2, 142R3, and 142R4 of the second-dimensional region 142, and can be minimized at the center of the third-dimensional region 143.

[0112] refer to Figure 9BIn the first-element region 141 and the fourth-element region 144, the phase delay of the green light in the transmitted light can be maximized at a position immediately following the incident light passing through the nanophotonic lens array 140, i.e., at the lower surface of the nanophotonic lens array 140. For example, the phase delay of the green light can be maximized at the center of each of the first sub-regions 141R1, 141R2, 141R3, and 141R4 in the first-element region 141, and at the center of each of the first sub-regions 144R1, 144R2, 144R3, and 144R4 in the fourth-element region 144. The phase delay of the green light can be reduced away from the center of each of the first sub-regions 141R1, second sub-region 141R2, third sub-region 141R3 and fourth sub-region 141R4 of the first sub-region 141 and away from the center of each of the first sub-regions 144R1, second sub-region 144R2, third sub-region 144R3 and fourth sub-region 144R4 of the fourth sub-region 144, and can be minimized at the center of the second sub-region 142 and the center of the third sub-region 143.

[0113] refer to Figure 9C The phase delay of red light in the transmitted light can be maximized in the third-element region 143, immediately following the incident light passing through the nanophotonic lens array 140, i.e., at the lower surface of the nanophotonic lens array 140. For example, the phase delay of red light can be maximized at the center of each of the first sub-regions 143R1, 143R2, 143R3, and 143R4 of the third-element region 143. The phase delay of red light can decrease away from the center of each of the first sub-regions 143R1, 143R2, 143R3, and 143R4 of the third-element region 143, and can be minimized at the center of the second-element region 142.

[0114] Figure 10 This is a cross-sectional view showing the phase distribution and focusing effect of red light generated by the nanophotonic lens array 140 according to an embodiment. See also Figure 10 The red light L incident on the nanophotonic lens array 140 can have a red light phase distribution PPR, which has two peaks in the third-element region 143 and is minimum at the center of the first direction in the fourth-element region 144. Although in Figure 10The cross-sectional view is not shown, but the red light phase distribution PPR can have two other peaks in different cross-sections in the second direction. These four phase delay peaks of the red light phase distribution PPR can be used as four convex lenses relative to the red light to form four red light focusing regions in the third pixel 113, respectively. For example, the red light focusing regions can be formed near the centers of the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3, and fourth sub-pixel P4 of the third pixel 113, which respectively face the first sub-region 143R1, the second sub-region 143R2, the third sub-region 143R3, and the fourth sub-region 143R4. According to one embodiment, not only red light incident on the third sub-region 143, but also red light incident on other sub-regions adjacent to the third sub-region 143 can be concentrated on the third pixel 113.

[0115] According to the embodiments, with Figure 10 The principle or characteristics of the phase distribution of red light shown can be applied to the phase distribution of blue light and green light by the nanophotonic lens array 140. For example, not only green light incident on the first element region 141, but also green light incident on other element regions adjacent to the first element region 141 can be focused onto each of the four sub-pixels of the first pixel 111; not only blue light incident on the second element region 142, but also blue light incident on other element regions adjacent to the second element region 142 can be focused onto each of the four sub-pixels of the second pixel 112; and not only green light incident on the fourth element region 144, but also green light incident on other element regions adjacent to the fourth element region 144 can be focused onto each of the four sub-pixels of the fourth pixel 114.

[0116] Figure 11A The image shows a region where blue light is concentrated, formed on the sensor substrate 110. Figure 11B This shows the area where green light is concentrated, formed on the sensor substrate 110. Figure 11C The region where red light is concentrated, formed on the sensor substrate 110, is shown. For convenience, Figure 11A , Figure 11B and Figure 11C Only one unit pixel group, 110G, is shown. (Reference) Figure 11A , 11BLike 11C, the nanophotonic lens array 140 can form four green light gathering regions in the first pixel 111, four blue light gathering regions in the second pixel 112, four red light gathering regions in the third pixel 113, and four green light gathering regions in the fourth pixel 114. For example, the nanophotonic lens array 140 can form gathering regions at the centers of the first sub-pixels P1, P2, P3, and P4 of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. In addition, the average position of the four concentration regions in each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 can coincide with the center of each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. In other words, the four concentration regions of each of the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 can be located at the same distance from the center of each of the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114. The image sensor 1000 according to the embodiment can have improved light utilization efficiency because the nanophotonic lens array 140 performs color separation of the incident light and focuses the color-separated light onto the sub-pixels of each pixel without absorbing or reflecting the incident light.

[0117] at the same time, Figure 2A , Figure 2B and Figure 10 A cross-section of the central portion of the nanophotonic lens array 140 is shown, where incident light is perpendicularly incident on the nanophotonic lens array 140, i.e., the principal ray angle (CRA) is 0 degrees. According to an embodiment, the boundaries of the first pixel 111, the first color filter 121, and the first meta-region 141 facing each other in a third direction at the central portion of the image sensor 1000, the central portion of the pixel array 1100, or the central portion of the nanophotonic lens array 140 where the incident light is perpendicularly incident can coincide with each other in a first direction and a second direction. Similarly, the boundaries of the second pixel 112, the second color filter 122, and the second meta-region 142 facing each other in a third direction at the central portion of the nanophotonic lens array 140 can coincide with each other in a first direction and a second direction; the boundaries of the third pixel 113, the third color filter 123, and the third meta-region 143 facing each other in a third direction can coincide with each other in a first direction and a second direction; and the boundaries of the fourth pixel 114, the fourth color filter 124, and the fourth meta-region 144 facing each other in a third direction can coincide with each other in a first direction and a second direction.

[0118] According to an embodiment, at the periphery of the nanophotonic lens array 140 on which incident light is obliquely incident, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 may be offset to compensate for phase delay changes according to the incident angle and to prevent or reduce the degradation of image quality, sensitivity, and autofocus characteristics. For example, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 may be offset towards the center of the nanophotonic lens array 140 relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. For example, the first element region 141 can be offset relative to the first pixel 111 towards the center of the nanophotonic lens array 140, the second element region 142 can be offset relative to the second pixel 112 towards the center of the nanophotonic lens array 140, the third element region 143 can be offset relative to the third pixel 113 towards the center of the nanophotonic lens array 140, and the fourth element region 144 can be offset relative to the fourth pixel 114 towards the center of the nanophotonic lens array 140.

[0119] Here, the periphery can be defined as all regions where the incident light's CRA is greater than 0 degrees, but is not limited to this. Considering manufacturing convenience, even if the incident light's CRA is not exactly 0 degrees, a portion of the region near the center of the nanophotonic lens array 140 can be defined as the central region. For example, a region where the incident light's CRA is within 5 degrees can be defined as the central region of the nanophotonic lens array 140, and a region where the incident light's CRA is greater than 5 degrees can be defined as the periphery of the nanophotonic lens array 140. However, this disclosure is not limited to this; therefore, according to another embodiment, a region where the incident light's CRA is within 10 degrees can be defined as the central region of the nanophotonic lens array 140, and a region where the incident light's CRA is greater than 10 degrees can be defined as the periphery of the nanophotonic lens array 140. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, the CRA of the incident light used to define the central region and the periphery can be determined differently based on the optical characteristics of the nanophotonic lens array 140.

[0120] Figure 12 This is a cross-sectional view showing the offset of the elemental region of the nanophotonic lens array 140 at its periphery. (Reference) Figure 12On the periphery of the nanophotonic lens array 140 or the pixel array 1100 where the incident light L is incident at an angle, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 can be offset relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 in the direction of light incidence. In other words, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 can be offset relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 toward the center of the pixel array 1100 or the center of the nanophotonic lens array 140.

[0121] For example, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 can be offset by a first distance d1 relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 towards the center of the nanophotonic lens array 140 or the center of the pixel array 1100. Therefore, on the periphery of the nanophotonic lens array 140 or the periphery of the pixel array 1100, the boundaries of the corresponding pixels and element regions do not coincide with each other in the first and second directions.

[0122] Figure 13 The offset direction of the unit elements of the nanophotonic lens array 140 according to the azimuth position of the periphery of the nanophotonic lens array 140 is shown. For convenience, Figure 13 The central tuple CG and the unit pixel group 110G are shown in an oblique direction, such that both the central tuple CG and the unit pixel group 110G are shown. The unit elements of the nanophotonic lens array 140 can be classified into central tuple CG and peripheral tuple PG according to their position on the nanophotonic lens array 140. The central tuple CG can be defined as the unit element located in the central portion of the nanophotonic lens array 140, and the peripheral tuple PG can be defined as the peripheral unit elements spaced apart from the central portion of the nanophotonic lens array 140. Although... Figure 13 A central tuple CG is shown, but multiple central tuple CGs can exist depending on the design of the nanophotonic lens array 140.

[0123] Reference Figure 13The central element CG in the unit element of the nanophotonic lens array 140 can be overlapped and aligned with the unit pixel group 110G facing the central element CG. In other words, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the central element CG can be overlapped and aligned with the corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 of the unit pixel group 110G, respectively.

[0124] The peripheral tuple PG can be offset from its corresponding unit pixel group 110G. The offset direction can be towards the center of the nanophotonic lens array 140. For example, the peripheral tuple PG spaced apart from the center of the nanophotonic lens array 140 in a first direction can be offset towards the center of the nanophotonic lens array 140 by a first distance d1x in the first direction. Furthermore, the peripheral tuple PG spaced apart from the center of the nanophotonic lens array 140 in a second direction can be offset towards the center of the nanophotonic lens array 140 by a first distance d1y in the second direction. The peripheral tuple PG spaced apart from the center of the nanophotonic lens array 140 in a diagonal direction can be offset towards the center of the nanophotonic lens array 140 by a first distance d1xy in the diagonal direction.

[0125] The larger the CRA of the incident light, for example, the greater the distance from the center of the nano-optical lens array 140, the greater the distance that the peripheral tuple PG is offset from the corresponding unit pixel group 110G. For example, the first distance d1 offset by the peripheral tuple PG from the corresponding unit pixel group 110G at the periphery of the nano-photonic lens array 140 can be expressed as follows.

[0126] d1 = h × tan(CRA')

[0127] Here, h is the shortest straight-line distance in the third direction between the lower surface of the nanophotonic lens array 140 and the upper surface of the sensor substrate 110. Therefore, the first distance d1 can be proportional to the distance in the third direction between the nanophotonic lens array 140 and the sensor substrate 110. CRA' represents the angle of incidence of light incident on the sensor substrate 110. In the example case where the angle of incidence of light incident on the nanophotonic lens array 140 is CRA, CRA' can be expressed as follows.

[0128] CRA' = sin -1 (n × sin CRA)

[0129] Here, n represents the average effective refractive index of the layer disposed between the nanophotonic lens array 140 and the sensor substrate 110.

[0130] The peripheral element PG is offset by a first distance d1 relative to the corresponding unit pixel group 110G on the periphery of the nanophotonic lens array 140 towards the center of the nanophotonic lens array 140, thus enabling effective color separation even at locations with a large CRA. Therefore, the deviation in color separation efficiency between the central portion and the periphery of the nanophotonic lens array 140 can be reduced.

[0131] Simultaneously, the diffraction and refraction characteristics of light passing through the nanophotonic lens array 140 can vary depending on the wavelength of the light. As a result, the average position of the four concentration regions formed in each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 at the periphery of the sensor substrate 110 can deviate from the center of each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. Furthermore, the distance and direction between the average position of the four concentration regions and the center of each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 can vary for each of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114. According to one embodiment, considering the differences in characteristics based on the wavelength of incident light, the first element region 141, second element region 142, third element region 143, and fourth element region 144 corresponding to pixels of different colors in the peripheral tuple PG can be offset by different distances in different directions to reduce color difference.

[0132] In an example where a density region is formed in each of the first sub-pixels P1, P2, P3, and P4 of the first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114, the density region may be offset from the center of each of the first sub-pixels P1, P2, P3, and P4 at the periphery of the sensor substrate 110. According to an embodiment, the four sub-regions of each of the first meta-region 141, second meta-region 142, third meta-region 143, and fourth meta-region 144 of the peripheral tuple PG can be individually offset, such that even at the periphery of the sensor substrate 110, the density region can be precisely formed at the center of each of the first sub-pixels P1, P2, P3, and P4.

[0133] Figure 14 The offsets of individual regions within the peripheral tuple PG of the nanophotonic lens array 140 are shown. (Refer to...) Figure 14The relative positional relationships among the first region 141, second region 142, third region 143, and fourth region 144 in the outer tuple PG may differ from the relative positional relationships among the first region 141, second region 142, third region 143, and fourth region 144 in the central tuple CG. For example, compared to the first region 141, second region 142, third region 143, and fourth region 144 in the central tuple CG, the first region 141, second region 142, third region 143, and fourth region 144 in the outer tuple PG may be offset in a first direction and / or a second direction. Therefore, the gaps between the first element region 141 and the second element region 142, the gaps between the first element region 141 and the third element region 143, the gaps between the second element region 142 and the fourth element region 144, and the gaps between the third element region 143 and the fourth element region 144 in the central tuple CG can be different from the gaps between the first element region 141 and the second element region 142, the gaps between the first element region 141 and the third element region 143, the gaps between the second element region 142 and the fourth element region 144, and the gaps between the third element region 143 and the fourth element region 144 in the peripheral tuple PG. For example, the gap between the first meta-region 141 and the second meta-region 142 in the central tuple CG may be different from the gap between the first meta-region 141 and the second meta-region 142 in the peripheral tuple PG; the gap between the first meta-region 141 and the third meta-region 143 in the central tuple CG may be different from the gap between the first meta-region 141 and the third meta-region 143 in the peripheral tuple PG; the gap between the second meta-region 142 and the fourth meta-region 144 in the central tuple CG may be different from the gap between the second meta-region 142 and the fourth meta-region 144 in the peripheral tuple PG; and the gap between the third meta-region 143 and the fourth meta-region 144 in the central tuple CG may be different from the gap between the third meta-region 143 and the fourth meta-region 144 in the peripheral tuple PG.

[0134] In other words, the gap between the first region 141 and the second region 142 in the central tuple CG can be different from the gap between the first region 141 and the second region 142 in the peripheral tuple PG; the gap between the first region 141 and the third region 143 in the central tuple CG can be different from the gap between the first region 141 and the third region 143 in the peripheral tuple PG; the gap between the second region 142 and the fourth region 144 in the central tuple CG can be different from the gap between the second region 142 and the fourth region 144 in the peripheral tuple PG; and / or the gap between the third region 143 and the fourth region 144 in the central tuple CG can be different from the gap between the third region 143 and the fourth region 144 in the peripheral tuple PG.

[0135] For example, the first region 141 of the outer tuple PG can be offset by ΔG1 relative to the center of the outer tuple PG, the second region 142 can be offset by ΔB relative to the center of the outer tuple PG, the third region 143 can be offset by ΔR relative to the center of the outer tuple PG, and the fourth region 144 can be offset by ΔG2 relative to the center of the outer tuple PG. ΔG1, ΔB, ΔR, and ΔG2 indicate the relative displacements of the first region 141, the second region 142, the third region 143, and the fourth region 144 relative to the center of the outer tuple PG, respectively. Figure 14 The arrows shown in ΔG1, ΔB, ΔR, and ΔG2 only exemplarily illustrate the offsets of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144, respectively. The actual offset directions and distances may differ from the arrow directions. As described above, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 at the periphery of the nanophotonic lens array 140 can be offset towards the center of the nanophotonic lens array 140 together with the peripheral element group PG. Furthermore, they can be further offset relative to each other within the peripheral element group PG.

[0136] Furthermore, the four sub-regions in each of the first, second, third, and fourth element regions 141, 142, 143, and 144 may be offset symmetrically relative to each other in the opposite direction to other adjacent sub-regions belonging to the same element region. For example, in each of the first, second, third, and fourth element regions 141, two adjacent sub-regions on the X-axis may be offset by the same distance in opposite directions on the X-axis, and two adjacent sub-regions on the Y-axis may be offset by the same distance in opposite directions on the Y-axis. For example, two adjacent sub-regions on the X-axis (e.g., a first direction) may be offset by opposite displacements in the first direction, and two adjacent sub-regions on the Y-axis (e.g., a second direction) may be offset by opposite displacements in the second direction. The offset of a sub-region may be defined relative to the centerline of the element region to which it belongs. In other words, a sub-region may be offset together with the element region by ΔG1, ΔB, ΔR, or ΔG2, and further offset may be made differently relative to each other within the respective element region.

[0137] The relative offset directions of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 within the peripheral tuple PG, as well as the relative offset directions of the sub-regions within these regions, can be determined primarily based on the position of the peripheral tuple PG at its azimuth angle φ on the nanophotonic lens array 140. The azimuth angle φ can be defined relative to a reference axis (e.g., the X-axis) that passes through the center C of the nanophotonic lens array 140 and is parallel to a first direction. For example, the azimuth angle φ of the peripheral tuple PG can be determined as the counterclockwise angle between the reference axis and the line segment connecting the center of the peripheral tuple PG to the center of the nanophotonic lens array 140.

[0138] Figure 15 and Figure 16 The relative displacements of subregions in the first element region 141 at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array 140 are shown respectively.

[0139] Reference Figure 15 At a position with an azimuth angle of 0 degrees (i.e., on the X-axis), the first element region 141 can be offset by a first displacement ΔG1x relative to the center of the outer element PG in a first direction (e.g., the X-axis). Figure 15In the diagram, the first displacement ΔG1x is indicated by an arrow pointing to the left, but this disclosure is not limited thereto. For example, depending on the design of the nanostructure NP of the nanophotonic lens array 140, G1x can have a positive or negative value. In the following, a positive value or positive direction is defined as a direction closer to the center of the nanophotonic lens array 140, and a negative value or negative direction is defined as a direction farther from the center of the nanophotonic lens array 140.

[0140] Furthermore, within the first sub-region 141, the first sub-region 141R1 and the second sub-region 141R2, which are adjacent to each other on the X-axis, can be further offset in opposite directions on the X-axis, and the third sub-region 141R3 and the fourth sub-region 141R4, which are adjacent to each other on the X-axis, can also be further offset in opposite directions on the X-axis. The offset distances of the first sub-region 141R1, the second sub-region 141R2, the third sub-region 141R3, and the fourth sub-region 141R4 in the first direction can be the same. For example, the first sub-region 141R1 and the third sub-region 141R3 can be offset by a positive first sub-displacement (+ΔG1'x) in the first direction, and the second sub-region 141R2 and the fourth sub-region 141R4 can be offset by a negative first sub-displacement (-ΔG1'x) in the first direction. Therefore, the first sub-region 141R1 and the second sub-region 141R2 can be provided symmetrically with respect to the center line of the second direction (e.g., the Y-axis) of the first sub-region 141, and the third sub-region 141R3 and the fourth sub-region 141R4 can be provided symmetrically with respect to the center line of the second direction of the first sub-region 141. Here, the center line of the second direction of the first sub-region 141 can be defined as a straight line passing through the center of the first sub-region 141 in the second direction.

[0141] according to Figure 15 In the embodiment shown, the first sub-region 141R1 and the second sub-region 141R2 move away from each other in a first direction, and the third sub-region 141R3 and the fourth sub-region 141R4 move away from each other in the first direction, but this disclosure is not limited thereto. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, the first sub-displacement ΔG1'x can have a positive or negative value. In other words, depending on the design of the nanostructure NP of the nanophotonic lens array 140, the first sub-region 141R1 and the second sub-region 141R2 can move closer to each other in the first direction, and the third sub-region 141R3 and the fourth sub-region 141R4 can move closer to each other in the first direction.

[0142] Therefore, at a position with an azimuth angle φ of 0 degrees, within the first element region 141, the first sub-region 141R1 and the third sub-region 141R3 can be offset by ΔG1x + ΔG1'x in the first direction relative to the center of the outer tuple PG to which the first element region 141 belongs, and the second sub-region 141R2 and the fourth sub-region 141R4 can be offset by ΔG1x - ΔG1'x in the first direction relative to the center of the outer tuple PG to which the first element region 141 belongs. Furthermore, within the first element region 141, the first sub-region 141R1 and the third sub-region 141R3 can be offset by d2x + (ΔG1x + ΔG1'x) in the first direction relative to the corresponding first sub-pixel P1 and third sub-pixel P3 of the first pixel 111, and the second sub-region 141R2 and the fourth sub-pixel 141R4 can be offset by d2x + (ΔG1x - ΔG1'x) in the first direction relative to the corresponding second sub-pixel P2 and fourth sub-pixel P4 of the first pixel 111.

[0143] At an azimuth angle φ of 0 degrees, the first element region 141 may not be offset relative to the center of the outer element PG in the second direction. Furthermore, the first sub-region 141R1, second sub-region 141R2, third sub-region 141R3, and fourth sub-region 141R4 within the first element region 141 may not be offset relative to each other in the second direction. For example, at an azimuth angle φ of 0 degrees, the gaps in the second direction between the first sub-region 141R1 and the third sub-region 141R3, and between the second sub-region 141R2 and the fourth sub-region 141R4, may remain unchanged.

[0144] Therefore, the gap in the first direction between the first sub-region 141R1 and the second sub-region 141R2 in the first meta-region 141 of the central tuple CG can be different from the gap in the first direction between the first sub-region 141R1 and the second sub-region 141R2 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle of 0 degrees. Similarly, the gap in the first direction between the third sub-region 141R3 and the fourth sub-region 141R4 in the first meta-region 141 of the central tuple CG can be different from the gap in the first direction between the third sub-region 141R3 and the fourth sub-region 141R4 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the first sub-region 141R1 and the third sub-region 141R3 in the first meta-region 141 of the central tuple CG can be the same as the gap in the second direction between the first sub-region 141R1 and the third sub-region 141R3 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap between the second sub-region 141R2 and the fourth sub-region 141R4 in the first sub-region 141 of the central tuple CG in the second direction can be the same as the gap between the second sub-region 141R2 and the fourth sub-region 141R4 in the second direction of the first sub-region 141 of the peripheral tuple PG located at an azimuth angle of 0 degrees.

[0145] Reference Figure 16 At a position with an azimuth angle φ of 90 degrees (e.g., on the Y-axis), the first element region 141 can be offset by a second displacement ΔG1y in the second direction relative to the center of the outer element PG. Figure 16 In the diagram, the second displacement ΔG1y is indicated by a downward-pointing arrow, but this disclosure is not limited thereto. For example, depending on the design of the nanostructure NP of the nanophotonic lens array 140, G1y can have a positive or negative value.

[0146] Furthermore, within the first sub-region 141, the first sub-region 141R1 and the third sub-region 141R3, which are adjacent to each other on the Y-axis, can be further offset in opposite directions on the Y-axis, and the second sub-region 141R2 and the fourth sub-region 141R4, which are adjacent to each other on the Y-axis, can also be further offset in opposite directions on the Y-axis. The offset distances of the first sub-region 141R1, the second sub-region 141R2, the third sub-region 141R3, and the fourth sub-region 141R4 in the second direction can be the same. For example, the first sub-region 141R1 and the second sub-region 141R2 can be offset by a negative second sub-displacement (-ΔG1'y) in the second direction, and the third sub-region 141R3 and the fourth sub-region 141R4 can be offset by a positive second sub-displacement (+ΔG1'y) in the second direction. Therefore, the first sub-region 141R1 and the third sub-region 141R3 can be symmetrically arranged with respect to the first direction centerline of the first sub-region 141, and the second sub-region 141R2 and the fourth sub-region 141R4 can be symmetrically arranged with respect to the first direction centerline of the first sub-region 141. Here, the first direction centerline of the first sub-region 141 can be defined as a straight line passing through the center of the first sub-region 141 in the first direction.

[0147] according to Figure 16 In the embodiment shown, the first sub-region 141R1 and the third sub-region 141R3 move away from each other in the second direction, and the second sub-region 141R2 and the fourth sub-region 141R4 move away from each other in the second direction, but this disclosure is not limited thereto. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, the second sub-displacement ΔG1'y can have a positive or negative value. In other words, depending on the design of the nanostructure NP of the nanophotonic lens array 140, the first sub-region 141R1 and the third sub-region 141R3 can move closer to each other in the second direction, and the second sub-region 141R2 and the fourth sub-region 141R4 can move closer to each other in the second direction.

[0148] As a result, at an azimuth angle φ of 90 degrees, within the first element region 141, the first sub-region 141R1 and the second sub-region 141R2 can be offset by ΔG1y-ΔG1′y in the second direction relative to the center of the outer tuple PG to which the first element region 141 belongs, and the third sub-region 141R3 and the fourth sub-region 141R4 can be offset by ΔG1y + ΔG1′y in the second direction relative to the center of the outer tuple PG to which the first element region 141 belongs. Furthermore, within the first element region 141, the first sub-region 141R1 and the second sub-region 141R2 can be offset by d2y+(ΔG1y-ΔG1′y) relative to the corresponding first sub-pixel P1 and the second sub-pixel P2 of the first pixel 111, and the third sub-region 141R3 and the fourth sub-pixel 141R4 can be offset by d2y+(ΔG1y+ΔG1′y) relative to the corresponding third sub-pixel P3 and the fourth sub-pixel P4 of the first pixel 111.

[0149] At an azimuth angle φ of 90 degrees, the first element region 141 may not be offset relative to the center of the outer element PG in the first direction. Furthermore, the first sub-regions 141R1, 141R2, 141R3, and 141R4 within the first element region 141 may not be offset relative to each other in the first direction. For example, at an azimuth angle φ of 90 degrees, the gaps in the first direction between the first and second sub-regions 141R1 and 141R2, and between the third and fourth sub-regions 141R3 and 141R4, may remain unchanged.

[0150] Therefore, the gap in the second direction between the first sub-region 141R1 and the third sub-region 141R3 in the first meta-region 141 of the central tuple CG can be different from the gap in the second direction between the first sub-region 141R1 and the third sub-region 141R3 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. The gap in the second direction between the second sub-region 141R2 and the fourth sub-region 141R4 in the first meta-region 141 of the central tuple CG can be different from the gap in the second direction between the second sub-region 141R2 and the fourth sub-region 141R4 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap in the first direction between the first sub-region 141R1 and the second sub-region 141R2 in the first meta-region 141 of the central tuple CG can be the same as the gap in the first direction between the first sub-region 141R1 and the second sub-region 141R2 in the first meta-region 141 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap between the third sub-region 141R3 and the fourth sub-region 141R4 in the first sub-region 141 of the central tuple CG in the first direction can be the same as the gap between the third sub-region 141R3 and the fourth sub-region 141R4 in the first sub-region 141 of the peripheral tuple PG located at an azimuth angle of 90 degrees in the first direction.

[0151] Figure 17 and Figure 18 The relative displacements of subregions in the second element region 142 at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array 140 are shown respectively.

[0152] Reference Figure 17 At a position with an azimuth angle φ of 0 degrees, the second element region 142 can be offset by a third displacement ΔBx relative to the center of the outer element PG in a first direction. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, Bx can have a positive or negative value.

[0153] Furthermore, in the second sub-region 142, the first sub-region 142R1 and the second sub-region 142R2, which are adjacent to each other on the X-axis, can be offset by the same distance in opposite directions on the X-axis, and the third sub-region 142R3 and the fourth sub-region 142R4, which are adjacent to each other on the X-axis, can also be offset by the same distance in opposite directions on the X-axis. For example, the first sub-region 142R1 and the third sub-region 142R3 can be offset by a positive third sub-displacement (+ΔB'x) in the first direction, while the second sub-region 142R2 and the fourth sub-region 142R4 can be offset by a negative third sub-displacement (-ΔB'x) in the first direction. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, the third sub-displacement ΔB'x can have a positive or negative value.

[0154] As a result, at a position with an azimuth angle φ of 0 degrees, within the second element region 142, the first sub-region 142R1 and the third sub-region 142R3 can be offset by ΔBx + ΔB'x in the first direction relative to the center of the outer tuple PG to which the second element region 142 belongs, and the second sub-region 142R2 and the fourth sub-region 142R4 can be offset by ΔBx - ΔB'x in the first direction relative to the center of the outer tuple PG to which the second element region 142 belongs. Furthermore, within the second element region 142, the first sub-region 142R1 and the third sub-region 142R3 can be offset by d2x + (ΔBx + ΔB'x) relative to the corresponding first sub-pixel P1 and third sub-pixel P3 of the second pixel 112, and the second sub-region 142R2 and the fourth sub-pixel 142R4 can be offset by d2x + (ΔBx - ΔB'x) relative to the corresponding second sub-pixel P2 and fourth sub-pixel P4 of the second pixel 112.

[0155] At a position with an azimuth angle φ of 0 degrees, the second element region 142 may not be offset relative to the center of the outer element PG in the second direction. In addition, the first sub-region 142R1, the second sub-region 142R2, the third sub-region 142R3, and the fourth sub-region 142R4 within the second element region 142 may not be offset relative to each other in the second direction.

[0156] Therefore, the gap in the first direction between the first sub-region 142R1 and the second sub-region 142R2 in the second region 142 of the central tuple CG can be different from the gap in the first direction between the first sub-region 142R1 and the second sub-region 142R2 in the second region 142 of the peripheral tuple PG located at an azimuth angle of 0 degrees. Similarly, the gap in the first direction between the third sub-region 142R3 and the fourth sub-region 142R4 in the second region 142 of the central tuple CG can be different from the gap in the first direction between the third sub-region 142R3 and the fourth sub-region 142R4 in the second region 142 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the first sub-region 142R1 and the third sub-region 142R3 in the second region 142 of the central tuple CG can be the same as the gap in the second direction between the first sub-region 142R1 and the third sub-region 142R3 in the second region 142 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the second sub-region 142R2 and the fourth sub-region 142R4 in the second sub-region 142 of the central tuple CG can be the same as the gap in the second direction between the second sub-region 142R2 and the fourth sub-region 142R4 in the second sub-region 142 of the peripheral tuple PG located at an azimuth angle of 0 degrees.

[0157] Reference Figure 18 The second element region 142 can be offset by a fourth displacement ΔBy relative to the center of the outer element PG at an azimuth angle φ of 90 degrees. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, By can have a positive or negative value.

[0158] Furthermore, within the second sub-region 142, the first sub-region 142R1 and the third sub-region 142R3, which are adjacent to each other on the Y-axis, can be further offset by the same distance in opposite directions on the Y-axis, and the second sub-region 142R2 and the fourth sub-region 142R4, which are adjacent to each other on the Y-axis, can also be further offset by the same distance in opposite directions on the Y-axis. For example, the first sub-region 142R1 and the second sub-region 142R2 can be offset by a negative fourth sub-displacement (-ΔB'y) in the second direction, and the third sub-region 142R3 and the fourth sub-region 142R4 can be offset by a positive fourth sub-displacement (+ΔB'y) in the second direction. Depending on the design of the nanostructure NP of the nanophotonic lens array 140, the fourth sub-displacement ΔB'y can have a positive or negative value.

[0159] As a result, at an azimuth angle φ of 90 degrees, within the second element region 142, the first sub-region 142R1 and the second sub-region 142R2 can be offset by ΔBy-ΔB'y in the second direction relative to the center of the outer tuple PG to which the second element region 142 belongs. The third sub-region 142R3 and the fourth sub-region 142R4 can be offset by ΔBy + ΔB'y in the second direction relative to the center of the outer tuple PG to which the second element region 142 belongs. Furthermore, within the second element region 142, the first sub-region 142R1 and the second sub-region 142R2 can be offset by d2y+(ΔBy-ΔB′y) relative to the corresponding first sub-pixel P1 and the second sub-pixel P2 of the second pixel 112. The third sub-region 142R3 and the fourth sub-pixel 142R4 can be offset by d2y+(ΔBy+ΔB′y) relative to the corresponding third sub-pixel P3 and the fourth sub-pixel P4 of the second pixel 112.

[0160] At an azimuth angle φ of 90 degrees, the second element region 142 may not be offset relative to the center of the outer element PG in the first direction. In addition, the first sub-region 142R1, the second sub-region 142R2, the third sub-region 142R3, and the fourth sub-region 142R4 may not be offset relative to each other in the first direction within the second element region 142.

[0161] Therefore, the gap in the second direction between the first sub-region 142R1 and the third sub-region 142R3 in the second region 142 of the central tuple CG can be different from the gap in the second direction between the first sub-region 142R1 and the third sub-region 142R3 in the second region 142 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. The gap in the second direction between the second sub-region 142R2 and the fourth sub-region 142R4 in the second region 142 of the central tuple CG can be different from the gap in the second direction between the second sub-region 142R2 and the fourth sub-region 142R4 in the second region 142 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap in the first direction between the first sub-region 142R1 and the second sub-region 142R2 in the second region 142 of the central tuple CG can be the same as the gap in the first direction between the first sub-region 142R1 and the second sub-region 142R2 in the second region 142 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap between the third sub-region 142R3 and the fourth sub-region 142R4 in the second sub-region 142 of the central tuple CG in the first direction can be the same as the gap between the third sub-region 142R3 and the fourth sub-region 142R4 in the second sub-region 142 of the peripheral tuple PG located at an azimuth angle of 90 degrees in the first direction.

[0162] Figure 19 and Figure 20 The relative displacements of subregions in the third element region 143 at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array 140 are shown respectively.

[0163] Figure 17 and Figure 18 The description of the second-dimensional region 142 can be similarly applied to Figure 19 and Figure 20 The third region is 143. (Refer to...) Figure 19 At a position with an azimuth angle φ of 0 degrees, the third element region 143 can be offset by a fifth displacement ΔRx on the X-axis relative to the center of the outer element PG. Within the third element region 143, the first sub-region 143R1 and the second sub-region 143R2 can be further offset by the same distance in opposite directions on the X-axis, and the third sub-region 143R3 and the fourth sub-region 143R4 can also be further offset by the same distance in opposite directions on the X-axis. For example, the first sub-region 143R1 and the third sub-region 143R3 can be offset by a positive fifth sub-displacement (+ΔR'x) in the first direction, and the second sub-region 143R2 and the fourth sub-region 143R4 can be offset by a negative fifth sub-displacement (-ΔR'x) in the first direction.

[0164] As a result, at a position with an azimuth angle φ of 0 degrees, within the third element region 143, the first sub-region 143R1 and the third sub-region 143R3 can be offset by ΔRx + ΔR'x in the first direction relative to the center of the outer tuple PG to which the third element region 143 belongs, and the second sub-region 143R2 and the fourth sub-region 143R4 can be offset by ΔRx - ΔR'x in the first direction relative to the center of the outer tuple PG to which the third element region 143 belongs. Within the third element region 143, the first sub-region 143R1 and the third sub-region 143R3 can be offset by d2x + (ΔRx + ΔR'x) relative to the corresponding first sub-pixel P1 and third sub-pixel P3 of the third pixel 113, and the second sub-region 143R2 and the fourth sub-pixel 143R4 can be offset by d2x + (ΔRx - ΔR'x) relative to the corresponding second sub-pixel P2 and fourth sub-pixel P4 of the third pixel 113.

[0165] At a position with an azimuth angle φ of 0 degrees, the third element region 143 may not be offset relative to the center of the outer element PG in the second direction. In addition, the first sub-region 143R1, the second sub-region 143R2, the third sub-region 143R3, and the fourth sub-region 143R4 within the third element region 143 may not be offset relative to each other in the second direction.

[0166] Therefore, the gap in the first direction between the first sub-region 143R1 and the second sub-region 143R2 in the third region 143 of the central tuple CG can be different from the gap in the first direction between the first sub-region 143R1 and the second sub-region 143R2 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 0 degrees. Similarly, the gap in the first direction between the third sub-region 143R3 and the fourth sub-region 143R4 in the third region 143 of the central tuple CG can be different from the gap in the first direction between the third sub-region 143R3 and the fourth sub-region 143R4 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the first sub-region 143R1 and the third sub-region 143R3 in the third region 143 of the central tuple CG can be the same as the gap in the second direction between the first sub-region 143R1 and the third sub-region 143R3 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the second sub-region 143R2 and the fourth sub-region 143R4 in the third region 143 of the central tuple CG can be the same as the gap in the second direction between the second sub-region 143R2 and the fourth sub-region 143R4 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 0 degrees.

[0167] Reference Figure 20The third element region 143 can be offset by a sixth displacement ΔRy in the second direction relative to the center of the outer element PG at an azimuth angle φ of 90 degrees. Furthermore, within the third element region 143, the first sub-region 143R1 and the third sub-region 143R3 can be further offset by the same distance in the opposite direction on the Y-axis, and the second sub-region 143R2 and the fourth sub-region 143R4 can also be further offset by the same distance in the opposite direction on the Y-axis. For example, the first sub-region 143R1 and the second sub-region 143R2 can be offset by a negative sixth sub-displacement (-ΔR'y) in the second direction, and the third sub-region 143R3 and the fourth sub-region 143R4 can be offset by a positive sixth sub-displacement (+ΔR'y) in the second direction.

[0168] As a result, at an azimuth angle φ of 90 degrees, within the third element region 143, the first sub-region 143R1 and the second sub-region 143R2 can be offset by ΔRy-ΔR'y in the second direction relative to the center of the outer tuple PG to which the third element region 143 belongs, and the third sub-region 143R3 and the fourth sub-region 143R4 can be offset by ΔRy+ΔR'y in the second direction relative to the center of the outer tuple PG to which the third element region 143 belongs. Furthermore, within the third element region 143, the first sub-region 143R1 and the second sub-region 143R2 can be offset by d2y+(ΔRy-ΔR′y) relative to the corresponding first sub-pixel P1 and the second sub-pixel P2 of the third pixel 113, and the third sub-region 143R3 and the fourth sub-pixel 143R4 can be offset by d2y+(ΔRy+ΔR′y) relative to the corresponding third sub-pixel P3 and the fourth sub-pixel P4 of the third pixel 113.

[0169] At an azimuth angle φ of 90 degrees, the third element region 143 may not be offset relative to the center of the outer element PG in the first direction. In addition, the first sub-region 143R1, the second sub-region 143R2, the third sub-region 143R3, and the fourth sub-region 143R4 within the third element region 143 may not be offset relative to each other in the first direction.

[0170] Therefore, the gap in the second direction between the first sub-region 143R1 and the third sub-region 143R3 in the third region 143 of the central tuple CG can be different from the gap in the second direction between the first sub-region 143R1 and the third sub-region 143R3 in the third region 143 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. Similarly, the gap in the second direction between the third sub-region 143R2 and the fourth sub-region 143R4 in the third region 143 of the central tuple CG can be different from the gap in the second direction between the second sub-region 143R2 and the fourth sub-region 143R4 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap in the first direction between the first sub-region 143R1 and the second sub-region 143R2 in the third region 143 of the central tuple CG can be the same as the gap in the first direction between the first sub-region 143R1 and the second sub-region 143R2 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 90 degrees. The gap in the first direction between the third sub-region 143R3 and the fourth sub-region 143R4 in the third region 143 of the central tuple CG can be the same as the gap in the first direction between the third sub-region 143R3 and the fourth sub-region 143R4 in the third region 143 of the peripheral tuple PG located at an azimuth angle of 90 degrees.

[0171] Figure 21 and Figure 22 The relative displacements of subregions in the fourth element region 144 at azimuth angles of 0 degrees and 90 degrees on the periphery of the nanophotonic lens array 140 are shown respectively.

[0172] Figure 15 and Figure 16 The description of the first-order region 141 can be similarly applied to Figure 21 and Figure 22 The fourth region is 144. (Refer to...) Figure 21 At a position with an azimuth angle φ of 0 degrees, the fourth element region 144 can be offset by a seventh displacement ΔG2x on the X-axis relative to the center of the outer element PG. Within the fourth element region 144, the first sub-region 144R1 and the second sub-region 144R2 can be further offset by the same distance in opposite directions on the X-axis, and the third sub-region 144R3 and the fourth sub-region 144R4 can also be further offset by the same distance in opposite directions on the X-axis. For example, the first sub-region 144R1 and the third sub-region 144R3 can be offset by a positive seventh sub-displacement (+ΔG2'x) on the X-axis, and the second sub-region 144R2 and the fourth sub-region 144R4 can be offset by a negative seventh sub-displacement (-ΔG2'x) in the first direction.

[0173] As a result, at a position with an azimuth angle φ of 0 degrees, within the fourth element region 144, the first sub-region 144R1 and the third sub-region 144R3 can be offset by ΔG2x+ΔG2'x in the first direction relative to the center of the outer tuple PG to which the fourth element region 144 belongs, and the second sub-region 144R2 and the fourth sub-region 144R4 can be offset by ΔG2x-ΔG2'x in the first direction relative to the center of the outer tuple PG to which the fourth element region 144 belongs. Within the fourth element region 144, the first sub-region 144R1 and the third sub-region 144R3 can be offset by d2x+(ΔG2x+ΔG2'x) relative to the corresponding first sub-pixel P1 and third sub-pixel P3 of the fourth pixel 114, and the second sub-region 144R2 and the fourth sub-pixel 144R4 can be offset by d2x+(ΔG2x-ΔG2'x) relative to the corresponding second sub-pixel P2 and fourth sub-pixel P4 of the fourth pixel 114.

[0174] At a position with an azimuth angle φ of 0 degrees, the fourth element region 144 may not be offset relative to the center of the outer element PG in the second direction. In addition, the first sub-region 144R1, the second sub-region 144R2, the third sub-region 144R3, and the fourth sub-region 144R4 within the fourth element region 144 may not be offset relative to each other in the second direction.

[0175] Therefore, the gap in the first direction between the first sub-region 144R1 and the second sub-region 144R2 in the fourth element region 144 of the central tuple CG may be different from the gap in the first direction between the first sub-region 144R1 and the second sub-region 144R2 in the fourth element region 144 of the peripheral tuple PG located at an azimuth angle of 0 degrees. Similarly, the gap in the first direction between the third sub-region 144R3 and the fourth sub-region 144R4 in the fourth element region 144 of the central tuple CG may be different from the gap in the first direction between the third sub-region 144R3 and the fourth sub-region 144R4 in the fourth element region 144 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the first sub-region 144R1 and the third sub-region 144R3 in the fourth element region 144 of the central tuple CG may be the same as the gap in the second direction between the first sub-region 144R1 and the third sub-region 144R3 in the fourth element region 144 of the peripheral tuple PG located at an azimuth angle of 0 degrees. The gap in the second direction between the second sub-region 144R2 and the fourth sub-region 144R4 in the fourth sub-region 144 of the central tuple CG can be the same as the gap in the second direction between the second sub-region 144R2 and the fourth sub-region 144R4 in the fourth sub-region 144 of the peripheral tuple PG located at an azimuth angle of 0 degrees.

[0176] Reference Figure 22The fourth element region 144 can be offset by an eighth displacement ΔG2y relative to the center of the outer element PG at an azimuth angle φ of 90 degrees. Furthermore, within the fourth element region 144, the first sub-region 144R1 and the third sub-region 144R3 can be further offset by the same distance in opposite directions on the Y-axis, and the second sub-region 144R2 and the fourth sub-region 144R4 can be further offset by the same distance in opposite directions on the Y-axis. For example, the first sub-region 144R1 and the second sub-region 144R2 can be offset by a negative eighth sub-displacement (-ΔG2'y) in the second direction, and the third sub-region 144R3 and the fourth sub-region 144R4 can be offset by a positive eighth sub-displacement (+ΔG2'y) in the second direction.

[0177] As a result, at an azimuth angle φ of 90 degrees, within the fourth element region 144, the first sub-region 144R1 and the second sub-region 144R2 can be offset by ΔG2y-ΔG2'y in the second direction relative to the center of the outer tuple PG to which the fourth element region 144 belongs, and the third sub-region 144R3 and the fourth sub-region 144R4 can be offset by ΔG2y+ΔG2'y in the second direction relative to the center of the outer tuple PG to which the fourth element region 144 belongs. Furthermore, within the fourth element region 144, the first sub-region 144R1 and the second sub-region 144R2 can be offset by d2y+(ΔG2y-ΔG2′y) relative to the corresponding first sub-pixel P1 and the second sub-pixel P2 of the fourth pixel 114, and the third sub-region 144R3 and the fourth sub-pixel 144R4 can be offset by d2y+(ΔG2y+ΔG2′y) relative to the corresponding third sub-pixel P3 and the fourth sub-pixel P4 of the fourth pixel 114.

[0178] At an azimuth angle φ of 90 degrees, the fourth element region 144 may not be offset relative to the center of the outer element PG in the first direction. In addition, the first sub-region 144R1, the second sub-region 144R2, the third sub-region 144R3, and the fourth sub-region 144R4 within the fourth element region 144 may not be offset relative to each other in the first direction.

[0179] Therefore, the gap in the second direction between the first sub-region 144R1 and the third sub-region 144R3 in the fourth region 144 of the central tuple CG may be different from the gap in the second direction between the first sub-region 144R1 and the third sub-region 144R3 in the fourth region 144 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. Similarly, the gap in the second direction between the third sub-region 144R2 and the fourth sub-region 144R4 in the fourth region 144 of the central tuple CG may be different from the gap in the second direction between the second sub-region 144R2 and the fourth sub-region 144R4 in the fourth region 144 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. The gap in the first direction between the first sub-region 144R1 and the second sub-region 144R2 in the fourth element region 144 of the central tuple CG can be the same as the gap in the first direction between the first sub-region 144R1 and the second sub-region 144R2 in the fourth element region 144 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees. The gap in the first direction between the third sub-region 144R3 and the fourth sub-region 144R4 in the fourth element region 144 of the central tuple CG can be the same as the gap in the first direction between the third sub-region 144R3 and the fourth sub-region 144R4 in the fourth element region 144 of the peripheral tuple PG located at an azimuth angle φ of 90 degrees.

[0180] Simultaneously, the absolute value of the seventh displacement ΔG2x of the fourth element region 144 can be the same as the absolute value of the second displacement ΔG1y of the first element region 141, and the absolute value of the seventh sub-displacement ΔG2'x of the fourth element region 144 can be the same as the absolute value of the second sub-displacement ΔG1'y of the first element region 141. Furthermore, the absolute value of the eighth displacement ΔG2y of the fourth element region 144 can be the same as the absolute value of the first displacement ΔG1x of the first element region 141, and the absolute value of the eighth sub-displacement ΔG2'y of the fourth element region 144 can be the same as the absolute value of the first sub-displacement ΔG1'x of the first element region 141. Therefore, the first element region 141 and the fourth element region 144 in the outer tuple PG can be symmetrically offset from each other with respect to an azimuth angle φ of ±45 degrees.

[0181] At the periphery of the nanophotonic lens array 140 with azimuth angles φ between 0 and 90 degrees, the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 can be offset relative to the center of the peripheral element PG in a first direction and a second direction. Furthermore, each of the four sub-regions of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 can also be offset in the first and second directions. The offset distance in the first direction can be proportional to the cosine of the azimuth angle, and the offset distance in the second direction can be proportional to the sine of the azimuth angle. Therefore, in each of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the outer tuple PG, the offset distance between adjacent first and second sub-regions in the first direction and the offset distance between adjacent third and fourth sub-regions in the first direction can decrease as the azimuth angle φ of the outer tuple PG increases from 0 degrees to 90 degrees, and the offset distance between adjacent first and third sub-regions in the second direction and the offset distance between adjacent second and fourth sub-regions in the second direction can increase as the azimuth angle φ of the outer tuple PG increases from 0 degrees to 90 degrees.

[0182] Figure 23 The relationship between the offset distance and azimuth angle of the sub-regions of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 within the outer element group PG of the nanophotonic lens array 140 is shown. (Refer to...) Figure 23 The first sub-region 141R1 of the first element region 141 can be offset by G11×cos(φ) in the first direction and by G22×sin(φ) in the second direction. The second sub-region 141R2 of the first element region 141 can be offset by G12×cos(φ) in the first direction and by G22×sin(φ) in the second direction. The third sub-region 141R3 of the first element region 141 can be offset by G11×cos(φ) in the first direction and by G21×sin(φ) in the second direction. The fourth sub-region 141R4 of the first element region 141 can be offset by G12×cos(φ) in the first direction and by G21×sin(φ) in the second direction.

[0183] The first subregion 142R1 of the second subregion 142 can be offset by B1×cos(φ) in the first direction and by B2×sin(φ) in the second direction. The second subregion 142R2 of the second subregion 142 can be offset by B2×cos(φ) in the first direction and by B2×sin(φ) in the second direction. The third subregion 142R3 of the second subregion 142 can be offset by B1×cos(φ) in the first direction and by B1×sin(φ) in the second direction. The fourth subregion 142R4 of the second subregion 142 can be offset by B2×cos(φ) in the first direction and by B1×sin(φ) in the second direction.

[0184] The first subregion 143R1 of the third-dimensional region 143 can be offset by R1×cos(φ) in the first direction and by R2×sin(φ) in the second direction. The second subregion 143R2 of the third-dimensional region 143 can be offset by R2×cos(φ) in the first direction and by R2×sin(φ) in the second direction. The third subregion 143R3 of the third-dimensional region 143 can be offset by R1×cos(φ) in the first direction and by R1×sin(φ) in the second direction. The fourth subregion 143R4 of the third-dimensional region 143 can be offset by R2×cos(φ) in the first direction and by R1×sin(φ) in the second direction.

[0185] The first subregion 144R1 of the fourth-element region 144 can be offset by G21×cos(φ) in the first direction and by G12×sin(φ) in the second direction. The second subregion 144R2 of the fourth-element region 144 can be offset by G22×cos(φ) in the first direction and by G12×sin(φ) in the second direction. The third subregion 144R3 of the fourth-element region 144 can be offset by G21×cos(φ) in the first direction and by G11×sin(φ) in the second direction. The fourth subregion 144R4 of the fourth-element region 144 can be offset by G22×cos(φ) in the first direction and by G11×sin(φ) in the second direction.

[0186] Here, G11 = Gx_sym + Gx_asym, G12 = Gx_sym - Gx_asym, G21 = Gy_sym + Gy_asym, G22 = Gy_sym - Gy_asym, B1 = B_sym + B_asym, B2 = B_sym - B_asym, R1 = R_sym + R_asym, R2 = R_sym - R_asym. For example, considering the differences in characteristics based on the wavelength of the incident light, Gx_sym, Gy_sym, B_sym, and R_sym can respectively indicate the offsets of the first region 141, the second region 142, the third region 143, and the fourth region 144 within the outer tuple PG. Additionally, Gx_asym, Gy_asym, B_asym, and R_asym can respectively indicate the amount by which the four sub-regions of each of the first sub-region 141, second sub-region 142, third sub-region 143, and fourth sub-region 144 of the outer tuple PG are individually offset, so as to form a clustered region at the center of each of the first sub-pixel P1, second sub-pixel P2, third sub-pixel P3, and fourth sub-pixel P4.

[0187] For example, Gx_sym×cos(φ) can be compared with the reference Figure 15 The first displacement ΔG1x described is the same, and Gx_asym×cos(φ) can be compared with the reference. Figure 15 The first sub-displacement ΔG1'x described is the same. Gy_sym×sin(φ) can be compared with the reference. Figure 16 The second displacement ΔG1y described is the same, and Gy_asym×sin(φ) can be compared with the reference. Figure 16 The second sub-displacement ΔG1'y described is the same. B_sym×cos(φ) can be compared with the reference... Figure 17 The third displacement ΔBx described is the same, and B_asym×cos(φ) can be compared with the reference. Figure 17 The third sub-displacement ΔB'x is described as the same. B_sym×sin(φ) can be compared with the reference... Figure 18 The fourth displacement ΔBy is described as the same, and B_asym×sin(φ) can be compared with the reference. Figure 18 The fourth sub-displacement ΔB'y described is the same. R_sym×cos(φ) can be compared with the reference. Figure 19 The fifth displacement ΔRx is described as the same, and R_asym×cos(φ) can be compared with the reference. Figure 19 The fifth sub-displacement ΔR'x described is the same. R_sym×sin(φ) can be compared with the reference. Figure 20 The sixth displacement ΔRy is described as the same, and R_asym×sin(φ) can be compared with the reference. Figure 20The sixth sub-displacement ΔR'y described is the same. Gy_sym×cos(φ) can be compared with the reference. Figure 21 The seventh displacement ΔG2x is described as the same, and Gy_asym×cos(φ) can be compared with the reference. Figure 21 The seventh sub-displacement ΔG2'x is described in the same way. Gx_sym×sin(φ) can be compared with the reference. Figure 22 The eighth displacement ΔG2y is described as the same, and Gx_asym×sin(φ) can be compared with the reference. Figure 22 The eighth sub-displacement ΔG2'y is described in the same way. The actual values ​​of Gx_sym, Gy_sym, B_sym, R_sym, Gx_asym, Gy_asym, B_asym, and R_asym can vary depending on the design of the multiple nanostructures NP of the nanophotonic lens array 140.

[0188] As described above, in the example case where the peripheral tuple PG is offset according to the CRA at the periphery of the nanophotonic lens array 140, the position of the nanostructure NP belonging to the peripheral tuple PG can be offset. Furthermore, in the example case where the first region 141, the second region 142, the third region 143, and the fourth region 144 are offset within the peripheral tuple PG to reduce chromatic aberration, the relative positions between the nanostructure NPs belonging to each of the first region 141, the second region 142, the third region 143, and the fourth region 144 can be changed. Additionally, in the example case where the sub-regions of each of the first region 141, the second region 142, the third region 143, and the fourth region 144 are offset to form a clustered region at the center of each of the first region 141, the second region 142, the third region 143, and the fourth region 144, the relative positions between the nanostructure NPs belonging to the sub-regions of each of the first region 141, the second region 142, the third region 143, and the fourth region 144 can be changed. Here, the offset of the outer tuple PG can refer to the offset of all nanostructures belonging to the outer tuple PG, the offset of each of the first tuple region 141, the second tuple region 142, the third tuple region 143, and the fourth tuple region 144 can refer to the offset of the nanostructure NP belonging to each of the first tuple region 141, the second tuple region 142, the third tuple region 143, and the fourth tuple region 144, and the offset of the subregion of each of the first tuple region 141, the second tuple region 142, the third tuple region 143, and the fourth tuple region 144 can refer to the offset of the nanostructure NP belonging to each subregion.

[0189] For example, return to reference Figure 8 , Figure 8 The unit tuple 140G shown can be the central tuple CG. Within the outer tuple PG, Figure 8The nanostructure NP shown can be offset and positioned relative to the unit pixel group 110G corresponding to the peripheral tuple PG towards the center of the nanophotonic lens array 140. Furthermore, within the peripheral tuple PG, the nanostructure NP belonging to the first element region 141 can be offset by a first displacement ΔG1x and a second displacement ΔG1y; the nanostructure NP belonging to the second element region 142 can be offset by a third displacement ΔBx and a fourth displacement ΔBy; the nanostructure NP belonging to the third element region 143 can be offset by a fifth displacement ΔRx and a sixth displacement ΔRy; and the nanostructure NP belonging to the fourth element region 144 can be offset by a seventh displacement ΔG2x and an eighth displacement ΔG2y.

[0190] Therefore, the gaps between nanostructures NP belonging to different meta-regions within the central tuple CG can be different from the gaps between nanostructures NP belonging to different meta-regions within the peripheral tuple PG. In other words, the gap between the first and second nanostructures belonging to different meta-regions in the central tuple CG can be different from the gaps between the third nanostructure in the peripheral tuple PG that is in the same position relative to the first nanostructure in the central tuple CG, and the fourth nanostructure in the peripheral tuple PG that is in the same position relative to the second nanostructure in the central tuple CG.

[0191] Because the offset direction and offset amount of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 can vary according to the azimuth direction, the gaps between nanostructures NP belonging to different element regions within the outer element group PG with different azimuth angles can be different. In other words, the gap between the fifth and sixth nanostructures belonging to different element regions in the first outer element group can be different from the gap between the seventh nanostructure in the second outer element group that is in the same position relative to the fifth nanostructure in the first outer element group and the eighth nanostructure in the second outer element group that is in the same position relative to the sixth nanostructure in the first outer element group. The first outer element group can have a first azimuth angle, and the second outer element group can have a second azimuth angle different from the first azimuth angle.

[0192] In each of the first subregion 141, second subregion 142, third subregion 143, and fourth subregion 144 of the peripheral tuple PG, nanostructures NP belonging to different subregions can be offset by the same distance in opposite directions relative to nanostructures NP belonging to adjacent subregions. Therefore, the gaps between nanostructures NP belonging to different subregions within a subregion of the central tuple CG can be different from the gaps between nanostructures NP belonging to different subregions within a subregion of the peripheral tuple PG. For example, the gap between the ninth nanostructure of the first subregion 141R1 of the first subregion 141 of the central tuple CG and the tenth nanostructure of the second subregion 141R2 of the first subregion 141 of the central tuple CG can be different from the gap between the eleventh nanostructure in the first subregion 141 of the peripheral tuple PG, which is positioned opposite to the ninth nanostructure of the central tuple CG, and the twelfth nanostructure in the first subregion 141 of the peripheral tuple PG, which is positioned opposite to the tenth nanostructure of the central tuple CG.

[0193] Because the offset direction and offset amount of the sub-regions of the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 can vary according to the azimuth direction, the gaps between nanostructures NP belonging to different sub-regions within the outer element group PG with different azimuth angles can also be different. For example, the gap between the thirteenth nanostructure of the first sub-region 141R1 of the first element region 141 of the first outer element group and the fourteenth nanostructure of the second sub-region 141R2 of the first outer element group can be different from the gap between the fifteenth nanostructure in the first element region 141 of the second outer element group, which is in the same position relative to the thirteenth nanostructure of the first outer element group, and the sixteenth nanostructure in the first element region 141 of the second outer element group, which is in the same position relative to the fourteenth nanostructure of the first outer element group. The first outer element group can have a first azimuth angle, and the second outer element group can have a second azimuth angle different from the first azimuth angle.

[0194] According to one embodiment, the nanostructure NP at the boundary between meta-regions or between sub-regions within the unit tuple 140G can be offset by the average offset of other adjacent nanostructure NPs. (Refer to...) Figure 8The first boundary nanostructure NP1, located at the center of the unit tuple 140G, can be situated at the boundaries of all the first, second, third, and fourth unit regions 141, 142, 143, and 144. In the peripheral tuple PG, the first boundary nanostructure NP1 can be offset by the average of the offsets of the first, second, third, and fourth unit regions 141, 142, 143, and 144. Therefore, the first boundary nanostructure NP1 in the peripheral tuple PG can be offset by the average of the first displacement ΔG1x, second displacement ΔG1y, third displacement ΔBx, fourth displacement ΔBy, fifth displacement ΔRx, sixth displacement ΔRy, seventh displacement ΔG2x, and eighth displacement ΔG2y. Here, the average value can be the average of both direction and magnitude. In the example case where the first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 are symmetrically offset relative to each other, the relative position of the first boundary nanostructure NP1 within the outer tuple PG can remain unchanged and can be the same as the relative position of the first boundary nanostructure NP1 within the central tuple CG.

[0195] The second boundary nanostructure NP2, located at the center of the first sub-region 141, can be situated at the boundaries of all four sub-regions: the first sub-region 141R1, the second sub-region 141R2, the third sub-region 141R3, and the fourth sub-region 141R4. Therefore, the sub-displacement of the second boundary nanostructure NP2 can be the average of the sub-displacements of the first sub-region 141R1, the second sub-region 141R2, the third sub-region 141R3, and the fourth sub-region 141R4. Because the first sub-region 141R1, the second sub-region 141R2, the third sub-region 141R3, and the fourth sub-region 141R4 are symmetrically offset relative to each other, the sub-displacement of the second boundary nanostructure NP2 can be zero. Therefore, the second boundary nanostructure NP2 can be offset along the first sub-region 141 by only the first displacement ΔG1x and the second displacement ΔG1y, and can be left unoffset.

[0196] Therefore, the gap between the second boundary nanostructure NP2 and any one of the nanostructures in the first sub-region 141R1, second sub-region 141R2, third sub-region 141R3, and fourth sub-region 141R4 can vary depending on the position of the unit tuple 140G. For example, the gap between the second boundary nanostructure NP2 in the central tuple CG and the seventeenth nanostructure in the first sub-region 141R1 of the first unit region 141 in the central tuple CG can be different from the gap between the second boundary nanostructure NP2 in the peripheral tuple PG and the eighteenth nanostructure in the peripheral tuple PG that is positioned opposite to the seventeenth nanostructure of the central tuple CG. Furthermore, the gap between the second boundary nanostructure NP2 and the nineteenth nanostructure in the first sub-region 141R1 of the first unit region 141 in the first peripheral tuple with a first azimuth angle can be different from the gap between the second boundary nanostructure NP2 and the twentieth nanostructure in the second peripheral tuple with a second azimuth angle that is positioned opposite to the nineteenth nanostructure of the first peripheral tuple.

[0197] Since the third sub-region 141R3 and the fourth sub-region 141R4 are symmetrically offset in opposite directions along the X-axis, the sub-displacement of the third boundary nanostructure NP3 provided at the boundary between the third sub-region 141R3 and the fourth sub-region 141R4 in the first element region 141 can be zero on the X-axis. Therefore, the gap in the first direction between the third boundary nanostructure NP3 in the central element CG and the twenty-first nanostructure within the third sub-region 141R3 of the first element region 141 in the central element CG can be different from the gap in the first direction between the third boundary nanostructure NP3 in the peripheral element PG and the twenty-second nanostructure in the peripheral element PG that is at the same position relative to the twenty-first nanostructure of the central element CG. The third boundary nanostructure NP3 can be offset together with the third sub-region 141R3 and the fourth sub-region 141R4 by a second sub-displacement ΔG1'y in the second direction.

[0198] Since the first sub-region 141R1 and the third sub-region 141R3 are symmetrically offset in opposite directions along the Y-axis, the sub-displacement of the fourth boundary nanostructure NP4 provided at the boundary between the first sub-region 141R1 and the third sub-region 141R3 in the first element region 141 can be zero on the Y-axis. Therefore, the gap in the second direction between the fourth boundary nanostructure NP4 in the central tuple CG and the twenty-third nanostructure within the first sub-region 141R1 of the first element region 141 can be different from the gap in the second direction between the fourth boundary nanostructure NP4 in the peripheral tuple PG and the twenty-fourth nanostructure in the peripheral tuple PG that is at the same position relative to the twenty-third nanostructure of the central tuple CG. The fourth boundary nanostructure NP4 can be offset by a first sub-displacement ΔG1'x in the first direction together with the first sub-region 141R1 and the third sub-region 141R3.

[0199] Figure 24 This is a cross-sectional view showing the phase distribution and focusing effect of the red light generated by the nanophotonic lens array 140 at its periphery. (Reference) Figure 24 The red light L incident on the nanophotonic lens array 140 can have a red light phase distribution PPR' that has two peaks in the third element region 143 and is minimum at the center of the fourth element region 144 in the first direction. Figure 24 The red phase distribution PPR' shown can be compared with... Figure 10 The red phase distribution PPR shown is different. For example, the red phase distribution PPR' can have a shape that slopes downward toward the center of the nanophotonic lens array 140, and can have a curved shape that is asymmetrical with respect to the two phase retardation peaks. Furthermore, the two phase retardation peaks are offset toward the center of the nanophotonic lens array 140. According to an embodiment, by forming as... Figure 24 The red light phase distribution PPR' shown can form a red light gathering region around the center of each of the first sub-pixels P1, the second sub-pixel P2, the third sub-pixel P3, and the fourth sub-pixel P4 of the third pixel 113, even at the periphery of the nanophotonic lens array 140 where the incident light is incident at an angle.

[0200] Figure 25 This is a cross-sectional view showing the offset of the meta-region of the nanophotonic lens array 140 and the color filter of the color filter layer 120 at the periphery of the nanophotonic lens array 140 according to another embodiment. See also Figure 25Not only the pixel region of the nanophotonic lens array 140, but also the color filters of the color filter layer 120 can be offset along the direction of the corresponding pixel at the periphery of the pixel array 1100 or the periphery of the nanophotonic lens array 140. In other words, the first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124 of the color filter layer 120 can be offset relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 toward the center of the pixel array 1100 or the center of the nanophotonic lens array 140.

[0201] For example, the first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124 of the color filter layer 120 can be offset by a second distance d2 relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 towards the center of the nanophotonic lens array 140 or the center of the pixel array 1100. The first element region 141, the second element region 142, the third element region 143, and the fourth element region 144 of the nanophotonic lens array 140 can be offset by a first distance d1 relative to their corresponding first pixel 111, second pixel 112, third pixel 113, and fourth pixel 114 towards the center of the nanophotonic lens array 140 or the center of the pixel array 1100. The first distance d1 can be greater than the second distance d2. In other words, the offset distances of the first meta-region 141, the second meta-region 142, the third meta-region 143, and the fourth meta-region 144 can be greater than the offset distances of the first color filter 121, the second color filter 122, the third color filter 123, and the fourth color filter 124, respectively. Therefore, at the periphery of the nanophotonic lens array 140 or the periphery of the pixel array 1100, the boundaries of the corresponding pixels, color filters, and meta-regions can not coincide with each other in the first and second directions.

[0202] Figure 25 This is a cross-sectional view showing the offset of the meta-region of the nanophotonic lens array 140 and the color filter of the color filter layer 120 at the periphery of the nanophotonic lens array 140 according to another embodiment. Reference Figure 26 The nanophotonic lens array 140 may have a multilayer structure with two or more layers. For example, the nanophotonic lens array 140 may include a first nanophotonic lens array layer 140a disposed on the spacer layer 130 and a second nanophotonic lens array layer 140b disposed on the first nanophotonic lens array layer 140a. The first nanophotonic lens array layer 140a may include a plurality of first-layer nanostructures NPL1, and the second nanophotonic lens array layer 140b may include a plurality of second-layer nanostructures NPL2.

[0203] The element regions of the first nanophotonic lens array layer 140a can be offset by a first distance d1 relative to their corresponding first pixels 111, second pixels 112, third pixels 113, and fourth pixels 114 towards the center of the nanophotonic lens array 140 or the center of the pixel array 1100. The element regions of the second nanophotonic lens array layer 140b can be offset by a third distance d3 relative to their corresponding first pixels 111, second pixels 112, third pixels 113, and fourth pixels 114 towards the center of the nanophotonic lens array 140 or the center of the pixel array 1100. The third distance d3 can be greater than the first distance d1. In other words, the offset distance of the element regions of the second nanophotonic lens array layer 140b can be greater than the offset distance of the element regions of the first nanophotonic lens array layer 140a.

[0204] Furthermore, the primitive regions and sub-regions of the first nanophotonic lens array layer 140a and the primitive regions and sub-regions of the second nanophotonic lens array layer 140b can be independently offset. For example, the values ​​of Gx_sym, Gy_sym, B_sym, R_sym, Gx_asym, Gy_asym, B_asym, and R_asym in the first nanophotonic lens array layer 140a can be different from the values ​​of Gx_sym, Gy_sym, B_sym, R_sym, Gx_asym, Gy_asym, B_asym, and R_asym in the second nanophotonic lens array layer 140b, respectively.

[0205] The image sensor 1000 according to the embodiment can have improved light utilization efficiency. Furthermore, the image sensor 1000 according to the above embodiment can provide a more improved autofocus signal and maintain relatively uniform sensitivity and performance across multiple pixels. The image sensor 1000 according to the embodiment can be used together with modular lenses having various properties to form a camera module and can be used in various electronic devices.

[0206] Figure 27 This is a block diagram illustrating an example of an electronic device ED01 including an image sensor 1000. (Reference) Figure 27In the network environment ED00, electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (such as a short-range wireless communication network), or with another electronic device ED04 and / or server ED08 via a second network ED99 (such as a long-range wireless communication network). Electronic device ED01 can communicate with electronic device ED04 via server ED08. Electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a user identification module ED96, and / or an antenna module ED97. In electronic device ED01, some components (such as the display device ED60) may be omitted, or another component may be added. Some components may be configured as an integrated circuit. For example, sensor modules ED76 (fingerprint sensors, iris sensors, illuminance sensors, etc.) can be embedded and implemented in display devices ED60 (displays, etc.).

[0207] Processor ED20 can control one or more components (hardware and software components, etc.) of electronic device ED01 connected to processor ED20 by executing software (program ED40, etc.), and can perform various data processing or operations. As part of data processing or operations, processor ED20 can load commands and / or data received from another component (sensor module ED76, communication module ED90, etc.) into volatile memory ED32, can process the commands and / or data stored in volatile memory ED32, and can store the result data in non-volatile memory ED34. Processor ED20 may include a main processor ED21a (central processing unit, application processor, etc.) and an auxiliary processor ED23 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently of or with the main processor ED21. Auxiliary processor ED23 can use less power than the main processor ED21 and can perform specialized functions.

[0208] When the main processor ED21 is inactive (sleep state), the auxiliary processor ED23 acts on behalf of the main processor ED21; or when the main processor ED21 is active (application execution state), the auxiliary processor ED23, together with the main processor ED21, can control the functions and / or states related to some components in the electronic device ED01 (display device ED60, sensor module ED76, communication module ED90, etc.). The auxiliary processor ED23 (image signal processor, communication processor, etc.) can be implemented as part of another component functionally related to it (camera module ED80, communication module ED90, etc.).

[0209] The memory ED30 can store various data required by the components of the electronic device ED01 (processor ED20, sensor module ED76, etc.). This data may include, for example, input and / or output data of the software (program ED40, etc.) and related commands. The memory ED30 may include volatile memory ED32 and / or non-volatile memory ED34.

[0210] The program ED40 can be stored as software in the memory ED30 and may include the operating system ED42, middleware ED44 and / or application ED46.

[0211] Input device ED50 can receive commands and / or data from outside the electronic device ED01 (such as from a user) to be used in components of the electronic device ED01 (such as processor ED20). Input device ED50 may include a microphone, mouse, keyboard, and / or digital pen (stylus).

[0212] The sound output device ED55 can output sound signals to the external electronic device ED01. The sound output device ED55 may include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia reproduction or recording playback, and the receiver can be used to receive calls. The receiver can be connected as part of the speaker or can be implemented as a stand-alone device.

[0213] Display device ED60 can provide visual information to the outside of electronic device ED01. Display device ED60 may include a display, hologram device or projector and control circuitry for controlling the corresponding device. Display device ED60 may include touch circuitry configured to sense touch and / or sensor circuitry configured to measure the intensity of the force generated by touch (pressure sensor, etc.).

[0214] The audio module ED70 can convert sound into electrical signals and vice versa. The audio module ED70 can obtain sound through the input device ED50, or output sound through the sound output device ED55 and / or the speaker and / or headphones of another electronic device (such as electronic device ED02) directly or wirelessly connected to electronic device ED01.

[0215] Sensor module ED76 can sense the operating status (power, temperature, etc.) or external environmental status (user status, etc.) of electronic device ED01, and can generate electrical signals and / or data values ​​corresponding to the sensed status. Sensor module ED76 may include gesture sensors, gyroscope sensors, pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) ray sensors, body sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0216] Interface ED77 can support one or more specified protocols that can be used, so that electronic device ED01 can be connected directly or wirelessly to another electronic device (electronic device ED02, etc.). Interface ED77 may include High Definition Multimedia Interface (HDMI), Universal Serial Bus (USB) interface, SD card interface and / or audio interface.

[0217] The connection terminal ED78 may include a connector through which electronic device ED01 can be physically connected to another electronic device (electronic device ED02, etc.). The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0218] The haptic module ED79 can convert electrical signals into mechanical stimuli (vibration, motion, etc.) or electrical stimuli that a user can sense through touch or motion. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0219] The ED80 camera module can capture still images and video. The ED80 camera module may include a lens assembly containing one or more lenses. Figure 1 The image sensor 1000, image signal processor, and / or flash are included. The lens assembly included in the camera module ED80 can collect light emitted from the object to be captured.

[0220] The power management module ED88 manages the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a power management integrated circuit (PMIC).

[0221] Battery ED89 can supply power to the components of electronic device ED01. Battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0222] Communication module ED90 can support the establishment of direct (wired) and / or wireless communication channels between electronic device ED01 and another electronic device (electronic device ED02, electronic device ED04, server ED08, etc.), and perform communication through the established communication channels. Communication module ED90 can operate independently of processor ED20 (application processor, etc.) and can include one or more communication processors that support direct and / or wireless communication. Communication module ED90 may include wireless communication module ED92 (cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS) communication module) and / or wired communication module ED94 (local area network (LAN) communication module, power line communication module, etc.). Within the communication module, the corresponding communication module can communicate with another electronic device through a first network ED98 (a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network ED99 (a long-range communication network such as a cellular network, the Internet, or computer network (LAN, WAN, etc.). Such communication modules can be integrated into a single component (a single chip, etc.) or implemented as multiple separate components (multiple chips). The wireless communication module ED92 can identify and authenticate electronic devices ED01 in communication networks (such as the first network ED98 and / or the second network ED99) by using subscriber information (International Mobile Subscriber Identifier (IMSI), etc.) stored in the subscriber identification module ED96.

[0223] Antenna module ED97 can transmit signals and / or power to or from an external source (another electronic device, etc.). The antenna may include a radiator formed as a conductive pattern on a substrate (PCB, etc.). Antenna module ED97 may include one or more antennas. In the example case where antenna module ED97 includes multiple antennas, communication module ED90 can select from the multiple antennas an antenna suitable for the type of communication used in a communication network such as first network ED98 and / or second network ED99. Signals and / or power can be transmitted between communication module ED90 and another electronic device via the selected antenna. Components other than antennas (RFIC, etc.) may be included as part of antenna module ED97.

[0224] Some components can be connected to each other through communication methods between peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and can exchange signals (commands, data, etc.).

[0225] Commands or data can be sent or received between electronic device ED01 and external electronic device ED04 via server ED08 connected to the second network ED99. Other electronic devices ED02 and ED04 can be devices of the same or different kinds as electronic device ED01. All or some operations performed in electronic device ED01 can be performed in one or more of the other electronic devices ED02, ED04, and ED08. In example cases where electronic device ED01 needs to perform a specific function or service, electronic device ED01 can request one or more other electronic devices to perform some or all of the function or service, instead of performing the function or service itself. The one or more electronic devices receiving the request perform additional functions or services related to the request and can transmit the results of the execution to electronic device ED01. For this purpose, cloud computing technology, distributed computing technology, or client-server computing technology can be used.

[0226] Figure 28 It is shown that it includes Figure 27 A block diagram of an example camera module ED80 in the electronic device ED01. (Refer to...) Figure 28 The camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (buffer memory, etc.), and / or an image signal processor 1160. The lens assembly 1110 can capture light emitted from an object whose image will be captured. The camera module ED80 may include multiple lens assemblies 1110, and in this case, the camera module ED80 may include a dual-camera module, a 360-degree camera, or a spherical camera. Some of the multiple lens assemblies 1110 may have the same lens performance (angle of view, focal length, autofocus, f-number, optical zoom, etc.) or different lens performance. The lens assembly 1110 may include a wide-angle lens or a telephoto lens.

[0227] The flash unit 1120 can emit light to enhance light emitted or reflected from an object. The flash unit 1120 can emit visible light or infrared light. The flash unit 1120 may include one or more light-emitting diodes (red-green-blue (RGB) LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or a xenon lamp. The image sensor 1000 can be as described above. Figure 1 The image sensor described converts light emitted or reflected from an object and transmitted through the lens assembly 1110 into electrical signals to obtain an image corresponding to the object.

[0228] Image stabilizer 1140 can respond to movement of camera module ED80 or electronics 1101 including camera module ED80 by moving image sensor 1000 or one or more lenses included in lens assembly 1110 in a specific direction, or by controlling the operating characteristics of image sensor 1000 (adjusting readout timing, etc.) to compensate for the negative effects of movement. Image stabilizer 1140 can sense movement of camera module ED80 or electronics ED01 using a gyroscope sensor or accelerometer sensor disposed inside or outside camera module ED80. Image stabilizer 1140 can be implemented as an optical type.

[0229] The memory 1150 can store some or all of the image data acquired by the image sensor 1000 for use in the next image processing operation. In the example case of acquiring multiple images at high speed, multiple images can be used to store the acquired raw data (Bayer pattern data, high-resolution data, etc.) in the memory 1150, display only the low-resolution image, and then transmit the raw data of the selected image (user selection, etc.) to the image signal processor 1160. The memory 1150 can be integrated with the memory ED30 of the electronic device ED01, or it can include an additional memory that operates independently.

[0230] Image signal processor 1160 can perform image processing operations on images acquired by image sensor 1000 or image data stored in memory 1150. Image processing operations may include depth map generation, 3D modeling, panorama generation, feature extraction, image combination, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). Image signal processor 1160 can perform control (exposure time control, readout timing control, etc.) on components (image sensor 1000, etc.) included in camera module ED80. Furthermore, image signal processor 1160 can generate a panchromatic image by executing the aforementioned demosaic algorithm. For example, when executing the demosaic algorithm to generate a panchromatic image, image signal processor 1160 can reconstruct most of the spatial resolution information using image signals from the green or yellow channels with a high spatial sampling rate.

[0231] Images processed by image signal processor 1160 can be stored again in memory 1150 for further processing, or they can be provided to external components of camera module ED80 (e.g., memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). Image signal processor 1160 can be integrated with processor ED20, or it can be configured as an additional processor operating independently of processor ED20. In the example case where image signal processor 1160 is configured as an additional processor separate from processor ED20, the image processed by image signal processor 1160 can undergo additional image processing performed by processor ED20 and then be displayed on display device ED60.

[0232] Furthermore, the image signal processor 1160 can independently receive two output signals from adjacent photosensitive units in each pixel or subpixel of the image sensor 1000, and can generate an autofocus signal from the difference between the two output signals. The image signal processor 1160 can control the lens assembly 1110 such that the focus of the lens assembly 1110 can be precisely formed on the surface of the image sensor 1000 based on the autofocus signal.

[0233] The electronic device ED01 may also include one or more camera modules with different performance or functions. The camera modules may include... Figure 23 The components of the camera module ED80 are similar to those of the other camera module, and the image sensor included in the camera module can be implemented as a CCD sensor and / or a CMOS sensor, and can include one or more sensors selected from image sensors with different performance characteristics, such as RGB sensors, black-and-white (BW) sensors, IR sensors, or UV sensors. In this case, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front-facing camera, and another camera module ED80 may include a rear-facing camera.

[0234] Figure 29 This is a block diagram of an electronic device 1200 that includes a multi-camera module. Figure 30 yes Figure 29 Detailed block diagram of a multi-camera module in an electronic device.

[0235] refer to Figure 29 The electronic device 1200 may include a camera module group 1300, an application processor 1400, a PMIC 1500, an external memory 1600, and an image generator 1700.

[0236] Camera module group 1300 may include multiple camera modules 1300a, 1300b, and 1300c. The accompanying drawings illustrate an example with three camera modules 1300a, 1300b, and 1300c arranged, but the implementation is not limited thereto. In some embodiments, camera module group 1300 may be modified to include only two camera modules. Additionally, in some embodiments, camera module group 1300 may be modified to include n camera modules (n is a natural number of 4 or greater).

[0237] In the following text, see below for reference. Figure 30 The detailed configuration of a camera module 1300b is described in detail, but the description provided below can also be applied to other camera modules 1300a and 1300c according to the embodiments.

[0238] Reference Figure 30 The camera module 1300b may include a prism 1305, an optical path folding element (OPFE) 1310, an actuator 1330, an image sensing device 1340, and a storage device 1350.

[0239] The prism 1305 may include a reflective surface 1307 of light-reflecting material and may deform the path of light L incident from the outside.

[0240] In some embodiments, prism 1305 can change the path of light L incident in the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). Additionally, prism 1305 can rotate the reflective surface 1307, which has a reflective material, about the central axis 1306 in direction A or about the central axis 1306 in direction B, such that the path of light L incident in the first direction (X direction) can be changed to a second direction (Y direction) perpendicular to the first direction (X direction). Here, OPFE 1310 can also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0241] In some embodiments, as shown in the figure, the maximum rotation angle of the prism 1305 in direction A is 15 degrees or less in the positive direction A and greater than 15 degrees in the negative direction A, but the embodiments are not limited thereto.

[0242] In some embodiments, the prism 1305 can be moved by an angle of about 20 degrees in the positive or negative B direction, or between 10 and 20 degrees, or between 15 and 20 degrees. Here, the angle of movement is the same in the positive or negative B direction, or can be similar within a range of about 1 degree.

[0243] In some embodiments, the prism 1305 can move the reflective surface 1307 of the light-reflecting material in a third direction (e.g., the Z direction) parallel to the direction in which the central axis 1306 extends.

[0244] OPFE 1310 may include, for example, an array of m optical lenses (where m is a natural number). These m lenses can move in a second direction (Y direction) and change the optical zoom ratio of camera module 1300b. In the example case where the basic optical zoom ratio of camera module 1300b is Z and the m optical lenses in OPFE 1310 are movable, the optical zoom ratio of camera module 1300b can be changed to 3Z, 5Z, or 10Z or greater.

[0245] Actuator 1330 can move OPFE 1310 or optical lens (hereinafter referred to as optical lens) to a specific position. For example, actuator 1330 can adjust the position of optical lens so that image sensor 1342 can be located at the focal length of optical lens for precise sensing operation.

[0246] Image sensing device 1340 may include image sensor 1342, control logic 1344, and memory 1346. Image sensor 1342 can sense an image of a target using light L provided through an optical lens. Control logic 1344 can control the overall operation of camera module 1300b. For example, control logic 1344 can control the operation of camera module 1300b according to control signals provided via control signal line CSLb.

[0247] For example, image sensor 1342 may include the aforementioned color-separating lens array or nanophotonic lens array. Image sensor 1342 can receive more signals separated according to the wavelength in each pixel by using a nanostructure-based color-separating lens array. Due to this effect, the light intensity required to produce high-resolution and low-light high-quality images can be ensured.

[0248] The memory 1346 may store information required for the operation of the camera module 1300b, such as calibration data 1347. Calibration data 1347 may include information required to generate image data using light L provided externally through the camera module 1300b. Calibration data 1347 may include, for example, information about the aforementioned rotation, information about the focal length, information about the optical axis, etc. In the example case where the camera module 1300b is implemented as a multi-state camera (whose focal length changes according to the position of the optical lens), calibration data 1347 may include information related to the focal length value of the autofocus optical lens according to each position (or state).

[0249] Storage 1350 can store image data sensed by image sensor 1342. Storage 1350 can be located external to image sensing device 1340 and stacked with sensor chip included in image sensing device 1340. In some embodiments, storage 1350 can be implemented as electrically erasable programmable read-only memory (EEPROM), but embodiments are not limited thereto.

[0250] Reference Figure 29 and Figure 30 In some embodiments, each of the plurality of camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Therefore, depending on the operation of the actuator 1330 included therein, each of the plurality of camera modules 1300a, 1300b, and 1300c may include calibration data 1347 that is the same as or different from that of the other camera modules.

[0251] In some embodiments, one of the plurality of camera modules 1300a, 1300b and 1300c (e.g. 1300b) may be a folding lens type camera module including the prism 1305 and OPFE 1310 described above, and the other camera modules (e.g. 1300a and 1300c) may be vertical camera modules excluding the prism 1305 and OPFE 1310, but the embodiments are not limited thereto.

[0252] In some embodiments, one of the plurality of camera modules 1300a, 1300b and 1300c (e.g. 1300c) may be a vertical depth camera that extracts depth information by using infrared (IR).

[0253] In some embodiments, at least two camera modules (e.g., 1300a and 1300b) of the plurality of camera modules 1300a, 1300b and 1300c may have different fields of view. In this case, for example, the optical lenses of at least two camera modules (e.g., 1300a and 1300b) of the plurality of camera modules 1300a, 1300b and 1300c may be different from each other, but the implementation is not limited thereto.

[0254] Additionally, in some embodiments, the multiple camera modules 1300a, 1300b, and 1300c may have different fields of view from each other. In this case, the optical lenses included in the multiple camera modules 1300a, 1300b, and 1300c may be different from each other, but the embodiments are not limited thereto.

[0255] In some embodiments, the multiple camera modules 1300a, 1300b, and 1300c can be physically separated from each other. That is, the sensing area of ​​an image sensor 1342 may not be divided and used by the multiple camera modules 1300a, 1300b, and 1300c, but rather the multiple camera modules 1300a, 1300b, and 1300c may each have an independent image sensor 1342 disposed therein.

[0256] Return to reference Figure 29 The application processor 1400 may include an image processing device 1410, a memory controller 1420, and internal memory 1430. The application processor 1400 may be implemented separately from the multiple camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the multiple camera modules 1300a, 1300b, and 1300c may be implemented as separate semiconductor chips.

[0257] The image processing apparatus 1410 may include a plurality of image processors 1411, 1412 and 1413 and a camera module controller 1414.

[0258] Image data generated by each of the camera modules 1300a, 1300b, and 1300c can be provided to the image processing device 1410 via separate image signal lines ISL1, ISL2b, and ISL3c, respectively. For example, image data transmission can be performed using a Camera Serial Interface (CSI) based on the Mobile Industry Processor Interface (MIPI), but the embodiments are not limited thereto.

[0259] Image data transmitted to image processing device 1410 may be stored in external memory 1600 before being transmitted to image processors 1411 and 1412. The image data stored in external memory 1600 may be provided to image processors 1411 and / or 1412. Image processor 1411 may correct the image data to generate video. Image processor 1412 may correct the image data to generate still images. For example, image processors 1411 and 1412 may perform preprocessing operations on the image data, such as color calibration and gamma calibration.

[0260] Image processor 1411 may include subprocessors. In an example where the number of subprocessors is equal to the number of camera modules 1300a, 1300b, and 1300c, each subprocessor can process image data provided from one camera module. In an example where the number of subprocessors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one of the subprocessors can process image data provided from multiple camera modules using time-sharing processing. Image data processed by image processor 1411 and / or image processor 1412 may be stored in external memory 1600 before being transferred to image processor 1413. Image data stored in external memory 1600 may be transferred to image processor 1412. Image processor 1412 can perform post-processing operations such as noise calibration, sharpening calibration, etc., on the image data.

[0261] Image data processed in image processor 1413 can be provided to image generator 1700. Image generator 1700 can generate a final image based on image generation information or pattern signals using the image data provided from image processor 1413.

[0262] Specifically, the image generator 1700 can generate an output image by merging at least a portion of image data generated by camera modules 1300a, 1300b, and 1300c, which have different fields of view, based on image generation information or a pattern signal. Alternatively, the image generator 1700 can generate an output image by selecting one of multiple image data sets generated by camera modules 1300a, 1300b, and 1300c, which have different fields of view, based on image generation information or a pattern signal.

[0263] In some embodiments, image generation information may include a zoom signal or zoom factor. Additionally, in some embodiments, the mode signal may be, for example, a signal based on a mode selected by the user.

[0264] In the example where the image generation information is a zoom signal (zoom factor) and camera modules 1300a, 1300b, and 1300c have different fields of view (angles of view), the image generator 1700 can perform different operations depending on the type of zoom signal. In the example where the zoom signal is a first signal, the image generator 1700 can merge the image data output from camera module 1300a with the image data output from camera module 1300c, and then generate an output image using the merged image signal and image data output from camera module 1300b that was not used in the merging. In the example where the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform image data merging, and can then generate an output image by selecting one image data line output from each of camera modules 1300a, 1300b, and 1300c, respectively. However, the embodiments are not limited to this, and the method of processing image data can be modified as needed.

[0265] The camera module controller 1414 can provide control signals to each of the camera modules 1300a, 1300b, and 1300c. The control signals generated by the camera module controller 1414 can be provided to the respective camera modules 1300a, 1300b, and 1300c via separate control signal lines CSLa, CSLb, and CSLc.

[0266] In some embodiments, control signals provided from camera module controller 1414 to a plurality of camera modules 1300a, 1300b, and 1300c may include mode information based on mode signals. The plurality of camera modules 1300a, 1300b, and 1300c may operate in a first operating mode and a second operating mode related to sensing speed based on the mode information.

[0267] In the first operating mode, multiple camera modules 1300a, 1300b, and 1300c can generate image signals at a first speed (e.g., generate image signals at a first frame rate), encode the image signals at a second speed faster than the first speed (e.g., encode image signals at a second frame rate greater than the first frame rate), and send the encoded image signals to the application processor 1400. In this respect, the second speed can be 30 times faster than the first speed or less.

[0268] Application processor 1400 can store the received image signal (i.e., the encoded image signal) in internal memory 1430 or external memory 1600 located outside application processor 1400, then read the encoded signal from internal memory 1430 or external memory 1600 and decode the encoded signal, and display image data generated based on the decoded image signal. For example, image processors 1411 and 1412 in image processing device 1410 can perform decoding and perform image processing on the decoded image signal.

[0269] In the second operating mode, multiple camera modules 1300a, 1300b, and 1300c can generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate) and send the image signals to the application processor 1400. The image signals provided to the application processor 1400 can be unencoded signals. The application processor 1400 can perform image processing on the received image signals or store the image signals in internal memory 1430 or external memory 1600.

[0270] The PMIC 1500 can supply power (e.g., power supply voltage) to each of the multiple camera modules 1300a, 1300b, and 1300c. For example, under the control of the application processor 1400, the PMIC 1500 can supply a first power to camera module 1300a via power signal line PSLa, a second power to camera module 1300b via power signal line PSLb, and a third power to camera module 1300c via power signal line PSLc.

[0271] The PMIC 1500 can generate and adjust the power levels corresponding to each of the plurality of camera modules 1300a, 1300b, and 1300c based on (or in response to) the power control signal PCON from the application processor 1400. The power control signal PCON can include power regulation signals for each operating mode of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the operating mode may include a low-power mode, and the power control signal PCON may include information about the camera module operating in low-power mode and the set power level. The power levels supplied to the plurality of camera modules 1300a, 1300b, and 1300c may be equal or different from each other. Additionally, the power levels can be changed dynamically.

[0272] According to an embodiment, an image sensor may include: a sensor substrate including a plurality of unit pixel groups, each unit pixel group including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nanophotonic lens array including a plurality of nanostructures configured to separate incident light according to wavelength and focus the incident light onto the first pixel, the second pixel, the third pixel, and the fourth pixel respectively, wherein the nanophotonic lens array includes a plurality of unit groups, each unit group including a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel, each of the first element region, the second element region, the third element region, and the fourth element region including a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region, and at least one sub-region is provided in each of the first sub-region, the second sub-region, the third sub-region, and the fourth sub-region. The plurality of unit units comprise a central unit located at the center of the nanophotonic lens array and peripheral units located at the periphery of the nanophotonic lens array. In the first, second, third, and fourth sub-regions of the peripheral units, the nanostructures of the first sub-region and the nanostructures of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset in the first direction with opposite displacements, and the nanostructures of the first sub-region and the nanostructures of the third sub-region adjacent to the first sub-region in a second direction are symmetrically offset in the second direction with opposite displacements. As the azimuth angle of the peripheral units increases from 0 degrees to 90 degrees, the offset distance of the nanostructures of the first and second sub-regions in the first direction decreases, and as the azimuth angle of the peripheral units increases from 0 degrees to 90 degrees, the offset distance of the nanostructures of the first and third sub-regions in the second direction increases.

[0273] Each of the first pixel, second pixel, third pixel, and fourth pixel may include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel that are grouped and arranged in a two-dimensional 2×2 array, and each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel may be configured to independently sense incident light.

[0274] The multiple nanostructures of the nanophotonic lens array can have different sizes, cross-sectional shapes, heights, and arrangements to focus light of a first wavelength band incident on the nanophotonic lens array onto each of the first, second, third, and fourth sub-pixels of a first pixel and each of the first, second, third, and fourth sub-pixels of a fourth pixel; focus light of a second wavelength band different from the first wavelength band onto the first, second, third, and fourth sub-pixels of a second pixel; and focus light of a third wavelength band different from the first and second wavelength bands onto the first, second, third, and fourth sub-pixels of a third pixel.

[0275] Each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel may include a plurality of photosensitive units configured to independently sense light.

[0276] Compared to the first element region of the central tuple, the first element region of the outer tuple can be offset by a first displacement in the first direction and by a second displacement in the second direction. Compared to the second element region of the central tuple, the second element region of the outer tuple can be offset by a third displacement in the first direction and by a fourth displacement in the second direction. Compared to the third element region of the central tuple, the third element region of the outer tuple can be offset by a fifth displacement in the first direction and by a sixth displacement in the second direction. Compared to the fourth element region of the central tuple, the fourth element region of the outer tuple can be offset by a seventh displacement in the first direction and by an eighth displacement in the second direction.

[0277] The gap between the first and second regions in the central tuple is different from the gap between the first and second regions in the outer tuple; the gap between the first and third regions in the central tuple is different from the gap between the first and third regions in the outer tuple; the gap between the second and fourth regions in the central tuple is different from the gap between the second and fourth regions in the outer tuple; or the gap between the third and fourth regions in the central tuple and the gap between the third and fourth regions in the outer tuple can be different from each other.

[0278] The gap between the first and second nanostructures belonging to different meta-regions in the central tuple can be different from the gap between the third nanostructure in the peripheral tuple that is located at the same position relative to the first nanostructure in the central tuple and the fourth nanostructure in the peripheral tuple that is located at the same position relative to the second nanostructure in the central tuple.

[0279] The peripheral tuple may include a first peripheral tuple having a first azimuth angle and a second peripheral tuple having a second azimuth angle different from the first azimuth angle, and the gap between the fifth nanostructure and the sixth nanostructure belonging to different meta-regions in the first peripheral tuple may be different from the gap between the seventh nanostructure in the second peripheral tuple that is located at the same position relative to the fifth nanostructure in the first peripheral tuple and the eighth nanostructure in the second peripheral tuple that is located at the same position relative to the sixth nanostructure in the first peripheral tuple.

[0280] Each of the plurality of unit tuples may include a first boundary nanostructure located at the boundaries of all first, second, third, and fourth unit regions, and the first boundary nanostructure in the peripheral tuples is offset by the average of the first, second, third, fourth, fifth, sixth, seventh, and eighth displacements.

[0281] The gap between the first and second sub-regions in the first region of the central tuple in the first direction may be different from the gap between the first and second sub-regions in the first region of the peripheral tuple located at an azimuth angle of 0 degrees in the first direction, and the gap between the third and fourth sub-regions in the first region of the central tuple in the first direction may be different from the gap between the third and fourth sub-regions in the first region of the peripheral tuple located at an azimuth angle of 0 degrees in the first direction.

[0282] The gap between the first and third sub-regions in the first element region of the central element in the second direction intersecting the first direction can be the same as the gap between the first and third sub-regions in the second direction in the first element region of the peripheral element located at an azimuth angle of 0 degrees. Similarly, the gap between the second and fourth sub-regions in the first element region of the central element in the second direction can be the same as the gap between the second and fourth sub-regions in the second direction in the first element region of the peripheral element located at an azimuth angle of 0 degrees.

[0283] The gap between the first and third sub-regions in the first element region of the central element in the second direction intersecting the first direction may be different from the gap between the first and third sub-regions in the second direction in the first element region of the peripheral element located at an azimuth angle of 90 degrees. Similarly, the gap between the second and fourth sub-regions in the first element region of the central element in the second direction may be different from the gap between the second and fourth sub-regions in the second direction in the first element region of the peripheral element located at an azimuth angle of 90 degrees.

[0284] The gap between the first and second sub-regions in the first element region of the central element in the first direction can be the same as the gap between the first and second sub-regions in the first element region of the peripheral element located at an azimuth angle of 90 degrees in the first direction. Furthermore, the gap between the third and fourth sub-regions in the first element region of the central element in the first direction can be the same as the gap between the third and fourth sub-regions in the first element region of the peripheral element located at an azimuth angle of 90 degrees in the first direction.

[0285] The gap between the ninth nanostructure in the first sub-region of the first element region of the central element and the tenth nanostructure in the second sub-region of the first element region of the central element can be different from the gap between the eleventh nanostructure in the first element region of the peripheral element, which is located at the same position as the ninth nanostructure of the central element, and the twelfth nanostructure in the first element region of the peripheral element, which is located at the same position as the tenth nanostructure of the central element.

[0286] The peripheral tuple may include a first peripheral tuple having a first azimuth angle and a second peripheral tuple having a second azimuth angle different from the first azimuth angle, and the gap between the thirteenth nanostructure of the first sub-region of the first element region of the first peripheral tuple and the fourteenth nanostructure of the second sub-region of the first element region of the first peripheral tuple may be different from the gap between the fifteenth nanostructure in the first element region of the second peripheral tuple that is located at the same position relative to the thirteenth nanostructure of the first peripheral tuple and the sixteenth nanostructure in the first element region of the second peripheral tuple that is located at the same position relative to the fourteenth nanostructure of the first peripheral tuple.

[0287] Each of the multiple unit tuples may include a second boundary nanostructure located at the boundary of all first sub-regions, second sub-regions, third sub-regions, and fourth sub-regions in the first unit region, and the gap between the second boundary nanostructure of the central tuple and the seventeenth nanostructure within the first sub-region of the first unit region of the central tuple may be different from the gap between the second boundary nanostructure of the peripheral tuple and the eighteenth nanostructure of the peripheral tuple located at the same position relative to the seventeenth nanostructure of the central tuple.

[0288] The peripheral tuple may include a first peripheral tuple having a first azimuth angle and a second peripheral tuple having a second azimuth angle different from the first azimuth angle, and the gap between the second boundary nanostructure of the first peripheral tuple and the nineteenth nanostructure within the first sub-region of the first meta-region of the first peripheral tuple may be different from the gap between the second boundary nanostructure of the second peripheral tuple and the twentieth nanostructure of the second peripheral tuple located at the same position relative to the nineteenth nanostructure of the first peripheral tuple.

[0289] Each of the multiple unit tuples may include a third boundary nanostructure located at the boundary between the third and fourth sub-regions in the first unit region, and the gap in the first direction between the third boundary nanostructure of the central tuple and the twenty-first nanostructure within the third sub-region of the first unit region may be different from the gap in the first direction between the third boundary nanostructure of the peripheral tuple and the twenty-second nanostructure of the peripheral tuple located at the same position relative to the twenty-first nanostructure of the central tuple.

[0290] The first and fourth element regions can be offset symmetrically from each other in the outer element with respect to an azimuth angle of ±45 degrees.

[0291] According to another embodiment, an electronic device may include: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and a processor configured to process the signal generated by the image sensor, wherein the image sensor includes: a sensor substrate including a plurality of unit pixel groups, each unit pixel group including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nanophotonic lens array including a plurality of nanostructures configured to separate incident light according to wavelength and focus the incident light onto the first pixel, the second pixel, the third pixel, and the fourth pixel respectively, the nanophotonic lens array including a plurality of unit elements, each unit element including a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel, each of the first element region, the second element region, the third element region, and the fourth element region including a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region. Four sub-regions, each of which provides at least one nanostructure, and multiple unit tuples including a central tuple located at the center of the nanophotonic lens array and peripheral tuples located at the periphery of the nanophotonic lens array, wherein in the first, second, third, and fourth sub-regions of the peripheral tuples, the nanostructures of the first sub-region and the nanostructures of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset in the first direction with opposite displacements, and the nanostructures of the first sub-region and the nanostructures of the third sub-region adjacent to the first sub-region in a second direction are symmetrically offset in the second direction with opposite displacements, the offset distance of the nanostructures of the first and second sub-regions in the first direction decreases as the azimuth angle of the peripheral tuple increases from 0 degrees to 90 degrees, and the offset distance of the nanostructures of the first and third sub-regions in the second direction increases as the azimuth angle of the peripheral tuple increases from 0 degrees to 90 degrees.

[0292] According to an embodiment, the nanophotonic lens array can separate and focus incident light according to wavelength without absorbing or blocking the incident light, thus improving the light utilization efficiency of the image sensor.

[0293] Furthermore, the nanostructure of the nanophotonic lens array can be designed with consideration of the CRA (Constant Radiation Arrangement) of incident light incident at an angle onto the periphery of the image sensor. This can reduce sensitivity deviations between pixels of different colors, sensitivity deviations between sub-pixels within the same color pixel, and autofocus characteristic deviations. Therefore, image quality and autofocus performance of the image sensor can be improved.

[0294] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the following claims.

[0295] Cross-references to related applications

[0296] This application is based on and claims priority to Korean Patent Application No. 10-2025-0017229, filed on February 11, 2025, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. An image sensor, comprising: A sensor substrate includes multiple unit pixel groups, each of which includes a first pixel, a second pixel, a third pixel, and a fourth pixel; as well as A nanophotonic lens array comprising multiple nanostructures configured to separate incident light according to wavelength and focus the incident light onto a first pixel, a second pixel, a third pixel, and a fourth pixel, respectively. The nanophotonic lens array comprises multiple unit tuples, each of which includes a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel. Each of the first element region, the second element region, the third element region, and the fourth element region includes a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region. At least one nanostructure is disposed in each of the first sub-region, the second sub-region, the third sub-region, and the fourth sub-region. The plurality of unit tuples includes a central tuple located at the center of the nanophotonic lens array and a plurality of peripheral tuples located at the periphery of the nanophotonic lens array. In the first, second, third, and fourth element regions of the plurality of peripheral elements, the nanostructure of the first sub-region and the nanostructure of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset with opposite displacements in the first direction; and the nanostructure of the first sub-region and the nanostructure of the third sub-region adjacent to the first sub-region in a second direction intersecting the first direction are symmetrically offset with opposite displacements in the second direction. As the azimuth angle of the corresponding one of the plurality of peripheral elements increases from 0 degrees to 90 degrees, the first distance by which the nanostructures of the first sub-region and the nanostructures of the second sub-region are offset in the first direction decreases, and as the azimuth angle of the corresponding one of the plurality of peripheral elements increases from 0 degrees to 90 degrees, the second distance by which the nanostructures of the first sub-region and the nanostructures of the third sub-region are offset in the second direction increases.

2. The image sensor according to claim 1, wherein, Each of the first pixel, the second pixel, the third pixel, and the fourth pixel includes a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel arranged in a two-dimensional array in the form of a 2×2 array, and Each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel is configured to independently sense incident light.

3. The image sensor according to claim 2, wherein, The plurality of nanostructures in the nanophotonic lens array have dimensions, cross-sectional shapes, heights, and arrangements for focusing light of a first wavelength band onto each of the first, second, third, and fourth sub-pixels of the first pixel and each of the first, second, third, and fourth sub-pixels of the fourth pixel; focusing light of a second wavelength band onto the first, second, third, and fourth sub-pixels of the second pixel; and focusing light of a third wavelength band onto the first, second, third, and fourth sub-pixels of the third pixel. The first wavelength band, the second wavelength band, and the third wavelength band are different from each other.

4. The image sensor according to claim 2, wherein, Each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel includes a plurality of photosensitive units configured to independently sense light.

5. The image sensor according to claim 1, wherein, Compared to the first element region of the central tuple, the first element region of one or more of the plurality of peripheral tuples is offset by a first displacement in the first direction and offset by a second displacement in the second direction. Compared to the second element region of the central tuple, the second element region of one or more of the peripheral tuples is offset by a third displacement in the first direction and by a fourth displacement in the second direction. Compared to the third region of the central tuple, the third region of one or more of the peripheral tuples is offset by a fifth displacement in the first direction and by a sixth displacement in the second direction, and Compared to the fourth element region of the central tuple, the fourth element region of one or more of the plurality of peripheral tuples is offset by a seventh displacement in the first direction and by an eighth displacement in the second direction.

6. The image sensor according to claim 5, wherein, The gap between the first and second element regions in the central tuple is different from the gap between the first and second element regions in one or more of the plurality of peripheral tuples; the gap between the first and third element regions in the central tuple is different from the gap between the first and third element regions in one or more of the plurality of peripheral tuples; the gap between the second and fourth element regions in the central tuple is different from the gap between the second and fourth element regions in one or more of the plurality of peripheral tuples; or the gap between the third and fourth element regions in the central tuple is different from the gap between the third and fourth element regions in one or more of the plurality of peripheral tuples.

7. The image sensor according to claim 6, wherein, The gap between the first nanostructure in the first meta-region of the central tuple and the second nanostructure in the second meta-region of the central tuple is different from the gap between the third nanostructure in the first meta-region of the first periphery tuple located at the same position as the first nanostructure of the central tuple and the fourth nanostructure in the first periphery tuple located at the same position as the second nanostructure of the central tuple.

8. The image sensor according to claim 6, wherein, The plurality of peripheral elements includes a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and The gap between the first nanostructure in the first meta-region of the first periphery group and the second nanostructure in the second meta-region of the first periphery group is different from the gap between the third nanostructure in the first meta-region of the second periphery group that is located at the same position as the first nanostructure in the first periphery group and the fourth nanostructure in the second meta-region of the second periphery group that is located at the same position as the second nanostructure in the first periphery group.

9. The image sensor according to claim 5, wherein, Each of the plurality of unit tuples includes a boundary nanostructure located at the boundaries of all first, second, third, and fourth unit regions, and the boundary nanostructure in one or more of the peripheral tuples is offset by the average of the first, second, third, fourth, fifth, sixth, seventh, and eighth displacements.

10. The image sensor according to claim 1, wherein, The gap in the first direction between the first sub-region and the second sub-region in the first element region of the central element is different from the gap in the first direction between the first sub-region and the second sub-region in the first element region of the first peripheral element located at the azimuth angle of 0 degrees among the plurality of peripheral elements, and The gap in the first direction between the third sub-region and the fourth sub-region in the first element region of the central element is different from the gap in the first direction between the third sub-region and the fourth sub-region in the first element region of the first peripheral element.

11. The image sensor according to claim 10, wherein, The gap in the second direction between the first sub-region and the third sub-region in the first element region of the central tuple is the same as the gap in the second direction between the first sub-region and the third sub-region in the first element region of the first peripheral tuple. The gap in the second direction between the second sub-region and the fourth sub-region in the first element region of the central element is the same as the gap in the second direction between the second sub-region and the fourth sub-region in the first element region of the first peripheral element.

12. The image sensor according to claim 10, wherein, The gap in the second direction between the first sub-region and the third sub-region in the first element region of the central element is different from the gap in the second direction between the first sub-region and the third sub-region in the first element region of the second peripheral element located at the 90-degree azimuth angle among the plurality of peripheral elements, and The gap in the second direction between the second sub-region and the fourth sub-region in the first element region of the central element is different from the gap in the second direction between the second sub-region and the fourth sub-region in the first element region of the second peripheral element.

13. The image sensor according to claim 12, wherein, The gap in the first direction between the first sub-region and the second sub-region in the first element region of the central element is the same as the gap in the first direction between the first sub-region and the second sub-region in the first element region of the second peripheral element. The gap in the first direction between the third and fourth sub-regions in the first element region of the central element is the same as the gap in the first direction between the third and fourth sub-regions in the first element region of the second peripheral element.

14. The image sensor according to claim 1, wherein, The gap between the first nanostructure in the first sub-region of the first elemental region of the central element and the second nanostructure in the second sub-region of the first elemental region of the central element is different from the gap between the third nanostructure in the first elemental region of the first peripheral element, which is located at the same position as the first nanostructure of the central element, and the fourth nanostructure in the first elemental region of the first peripheral element, which is located at the same position as the second nanostructure of the central element.

15. The image sensor according to claim 1, wherein, The plurality of peripheral elements includes a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and The gap between the first nanostructure in the first sub-region of the first element belonging to the first peripheral element and the second nanostructure in the second sub-region of the first peripheral element is different from the gap between the third nanostructure in the first element of the second peripheral element, which is located at the same position as the first nanostructure of the first peripheral element, and the fourth nanostructure in the first element of the second peripheral element, which is located at the same position as the second nanostructure of the first peripheral element.

16. The image sensor according to claim 1, wherein, Each of the plurality of unit tuples includes a boundary nanostructure located at the boundaries of all the first sub-regions, the second sub-regions, the third sub-regions, and the fourth sub-regions within the first unit region, and The gap between the boundary nanostructure of the central element and the first nanostructure within the first sub-region of the first element region of the central element is different from the gap between the boundary nanostructure of the first peripheral element and the second nanostructure of the first peripheral element located at the same position relative to the first nanostructure of the central element.

17. The image sensor according to claim 1, wherein, The plurality of peripheral elements includes a first peripheral element having a first azimuth angle and a second peripheral element having a second azimuth angle different from the first azimuth angle, and The gap between the boundary nanostructure of the first peripheral element and the first nanostructure within the first sub-region of the first element region of the first peripheral element is different from the gap between the boundary nanostructure of the second peripheral element and the second nanostructure of the second peripheral element located at the same position relative to the first nanostructure of the first peripheral element.

18. The image sensor according to claim 1, wherein, Each of the plurality of unit tuples includes a boundary nanostructure located at the boundary between the third sub-region and the fourth sub-region in the first unit region, and The gap in the first direction between the boundary nanostructure of the central element and the first nanostructure within the third sub-region of the first element region of the central element is different from the gap in the first direction between the boundary nanostructure of the first peripheral element and the second nanostructure of the first peripheral element located at the same position relative to the first nanostructure of the central element.

19. The image sensor of claim 1, wherein the first element region and the fourth element region are symmetrically offset from each other with respect to an azimuth angle of ±45 degrees in one or more of the plurality of peripheral elements.

20. An electronic device comprising: Lens assembly, configured to form an optical image of an object; An image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; as well as The processor is configured to process the electrical signals generated by the image sensor. The image sensor mentioned above includes: A sensor substrate includes multiple units of pixel groups, each of which includes a first pixel, a second pixel, a third pixel, and a fourth pixel; and A nanophotonic lens array comprising multiple nanostructures configured to separate incident light according to wavelength and focus the incident light onto a first pixel, a second pixel, a third pixel, and a fourth pixel, respectively. The nanophotonic lens array comprises multiple unit tuples, each of which includes a first element region corresponding to the first pixel, a second element region corresponding to the second pixel, a third element region corresponding to the third pixel, and a fourth element region corresponding to the fourth pixel. Each of the first element region, the second element region, the third element region, and the fourth element region includes a first sub-region, a second sub-region, a third sub-region, and a fourth sub-region. In each of the first sub-region, the second sub-region, the third sub-region, and the fourth sub-region, at least one nanostructure is provided. The plurality of unit tuples includes a central tuple located at the center of the nanophotonic lens array and a plurality of peripheral tuples located at the periphery of the nanophotonic lens array. In the first, second, third, and fourth element regions of the plurality of peripheral elements, the nanostructure of the first sub-region and the nanostructure of the second sub-region adjacent to the first sub-region in a first direction are symmetrically offset with opposite displacements in the first direction; and the nanostructure of the first sub-region and the nanostructure of the third sub-region adjacent to the first sub-region in a second direction intersecting the first direction are symmetrically offset with opposite displacements in the second direction. As the azimuth angle of the corresponding one of the plurality of peripheral tuples increases from 0 degrees to 90 degrees, the first distance by which the nanostructures of the first sub-region and the nanostructures of the second sub-region are offset in the first direction decreases, and as the azimuth angle of the corresponding one of the plurality of peripheral tuples increases from 0 degrees to 90 degrees, the second distance by which the nanostructures of the first sub-region and the nanostructures of the third sub-region are offset in the second direction increases.

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