Light emitting element, electronic device including the same, and method of manufacturing light emitting element

Abstract

This invention relates to a light-emitting element, an electronic device including the same, and a method for manufacturing the light-emitting element. One embodiment of the method includes: forming a hole transport region on a first electrode; forming a light-emitting layer including quantum dots on the hole transport region; forming an electron transport region on the light-emitting layer; and forming a second electrode on the electron transport region. At least one of the steps of forming the light-emitting layer and forming the electron transport region includes multiple steps of forming sublayers. The step of forming sublayers includes a step of providing a preliminary sublayer and a step of drying the preliminary sublayer. This method can be used to manufacture a light-emitting element that suppresses porosity in the light-emitting layer and / or the electron transport region and has improved element characteristics.

Description

Technical Field

[0001] This invention relates to a light-emitting element, an electronic device, and a method for manufacturing the light-emitting element. More specifically, it relates to a light-emitting element with reduced porosity in the electron transport region or light-emitting layer, an electronic device including the same, and a method for manufacturing such a light-emitting element. Background Technology

[0002] Multimedia electronic devices such as televisions, mobile phones, tablet computers, navigation devices, game consoles, and wearable devices may include display modules for displaying images. Display modules include light-emitting elements; recently, quantum dot light-emitting element technology has been developed.

[0003] In the manufacturing process of light-emitting elements, a printing technique can be used to fabricate the elements by stacking layers. However, a problem arises where material volume decreases and porosity is generated during the drying process of the electron transport region or the light-emitting layer. When porosity occurs, the mass of the light-emitting element and the electronic devices containing it decreases due to particle diffusion from adjacent layers. Therefore, research on reducing porosity in light-emitting elements is currently underway. Summary of the Invention

[0004] The object of the present invention is to provide a light-emitting element with reduced porosity and an electronic device including the same.

[0005] The purpose of this invention is to provide a method for manufacturing a light-emitting element with reduced porosity.

[0006] One embodiment provides a method for manufacturing a light-emitting element, comprising: forming a hole transport region on a first electrode; forming a light-emitting layer including quantum dots on the hole transport region; forming an electron transport region on the light-emitting layer; and forming a second electrode on the electron transport region. At least one of the steps of forming the light-emitting layer and forming the electron transport region includes multiple steps of forming sublayers. The step of forming the sublayers includes a step of providing a preliminary sublayer and a step of drying the preliminary sublayer.

[0007] Alternatively, the initial sublayer may be provided via inkjet printing.

[0008] It is possible that the multiple sublayers formed by repeating the steps of forming the sublayers are organic-inorganic composite layers.

[0009] The steps of forming the sublayer may be repeated two to five times.

[0010] It is possible that the material of the initial sublayer is the same in multiple steps of forming the sublayer.

[0011] It is possible to repeat the steps of forming the sublayer multiple times to form multiple sublayers of the same thickness.

[0012] It may be possible to include a step of forming a blocklayer before at least one of the steps of forming the light-emitting layer, forming the electron transport region, and forming the second electrode.

[0013] One embodiment provides a light-emitting element, comprising: a first electrode; a hole transport region disposed on the first electrode; a light-emitting layer disposed on the hole transport region and comprising quantum dots; an electron transport region disposed on the light-emitting layer; and a second electrode disposed on the electron transport region, wherein the light-emitting layer and at least one of the electron transport regions comprise a plurality of sublayers divided in a thickness direction, and an H concentration measured along the thickness direction of the plurality of sublayers has a minimum or maximum value at the interface between the plurality of sublayers.

[0014] Yes, the multiple sub-layers can be organic-inorganic composite layers.

[0015] It is possible that the multiple sub-layers have the same thickness.

[0016] It is possible that the number of the multiple sub-layers is two or more but less than five.

[0017] Alternatively, the plurality of sublayers may each include pores, wherein the length of the pores in the thickness direction of the sublayer is less than the thickness of each of the sublayers.

[0018] Alternatively, the plurality of sub-layers may each include pores, and the pores are not connected to the pores of adjacent sub-layers.

[0019] Alternatively, the light-emitting element may further include a blocking layer, which is directly disposed on at least one of the surfaces above the light-emitting layer, below the light-emitting layer, above the electron transport region, and below the electron transport region.

[0020] Alternatively, the plurality of sublayers may each independently include at least one of Al2O3, TiO2, SiO2, BaSO4, Ta2O5, PbCl2, PbBr2, PbI2, ITO (indium tin oxide), Ag, ZnO, SnCl2, SnBr2, SnI2, SnO, PVP (polyvinylpyrrolidone), and PMMA (polymethyl methacrylate).

[0021] One embodiment provides an electronic device, comprising: a display device including a display module for displaying images, the display module including a plurality of light-emitting elements, each of the light-emitting elements including: a first electrode; a hole transport region disposed on the first electrode; a light-emitting layer disposed on the hole transport region and including quantum dots; an electron transport region disposed on the light-emitting layer; and a second electrode disposed on the electron transport region, wherein at least one of the light-emitting layer and the electron transport region includes a plurality of sublayers divided in a thickness direction, and an H concentration measured along the thickness direction of the plurality of sublayers has a minimum or maximum value at the interface between the plurality of sublayers.

[0022] Yes, the multiple sub-layers can be organic-inorganic composite layers.

[0023] It is possible that the number of the multiple sub-layers is two or more but less than five.

[0024] Alternatively, the electronic device may also include at least one of a processor, a memory, and a power module.

[0025] The electronic device may be a television set, monitor, billboard, personal computer, laptop computer, personal digital terminal, vehicle device, game console, smartphone, tablet, smartwatch, or camera.

[0026] It is possible that at least one of the steps of forming the light-emitting layer and forming the electron transport region in the light-emitting element manufacturing method of one embodiment includes multiple steps of forming sub-layers. The steps of forming the sub-layers respectively include the step of providing a preliminary sub-layer and the step of drying the preliminary sub-layer, thereby manufacturing a light-emitting element for suppressing the generation of porosity in the light-emitting layer and / or the electron transport region and having improved element characteristics.

[0027] In one embodiment, the light-emitting layer and at least one of the electron transport regions of the light-emitting element include a plurality of sub-layers divided in the thickness direction. The H concentration measured along the thickness direction of the plurality of sub-layers has a minimum or maximum value at the interface between the plurality of sub-layers. Therefore, the generation of pores in the light-emitting layer and / or the electron transport region is suppressed to suppress the diffusion of material from adjacent layers such as the second electrode through the pores.

[0028] An electronic device of one embodiment may include the light-emitting element to exhibit improved display quality and reliability characteristics. Attached Figure Description

[0029] Figure 1a This is a block diagram of an electronic device according to an embodiment.

[0030] Figure 1b These are schematic diagrams of electronic devices according to various embodiments.

[0031] Figure 2 This is a perspective view of an electronic device according to an embodiment.

[0032] Figure 3 This is a perspective view of a display module according to one embodiment.

[0033] Figure 4 This is a cross-sectional view of a display module according to one embodiment.

[0034] Figure 5 This is a cross-sectional view of a display module according to one embodiment.

[0035] Figure 6 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0036] Figure 7 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0037] Figure 8 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0038] Figure 9 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0039] Figure 10 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0040] Figure 11 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0041] Figure 12 This is a cross-sectional view of a light-emitting element according to one embodiment.

[0042] Figure 13 This is a flowchart illustrating a method for manufacturing a light-emitting element according to an embodiment.

[0043] Figure 14 This is a flowchart illustrating a portion of a method for manufacturing a light-emitting element according to an embodiment. Figure 15 This is a flowchart illustrating a portion of a method for manufacturing a light-emitting element according to an embodiment.

[0044] (Explanation of reference numerals in the attached diagram)

[0045] EA: Electronic Devices

[0046] ED: Light-emitting element

[0047] PR: Processor

[0048] PM: Power Module

[0049] DM: Display Module

[0050] MR: Memory

[0051] DD: Display device

[0052] HAU: Shell

[0053] EA-IS: Display Surface

[0054] AA: Active Area

[0055] NAA: Border Area

[0056] DA: Display Area

[0057] NDA: Non-display area

[0058] PXA: Pixel area

[0059] NPXA: Surrounding Area

[0060] PP: Optical components

[0061] DP: Display Panel

[0062] TFE: Encapsulation layer

[0063] EDL: Display Layer

[0064] DP-CL: Circuit Layer

[0065] BS: Basal layer

[0066] ED-R, ED-G, ED-B: Light-emitting elements

[0067] CFL: Color filter layer

[0068] CF-R, CF-G, CF-B: First to third color filters

[0069] PDL: Pixel Delimiter

[0070] IOL1, IOL2: Encapsulating inorganic film

[0071] OL: Encapsulated organic membrane

[0072] BFL: Buffer Layer

[0073] PP-BL: Substrate

[0074] AE: First electrode

[0075] HTR: Hole Transport Region

[0076] EML: Emissive Layer

[0077] ETR: Electron Transport Region

[0078] CE: Second electrode

[0079] CPL: Overlay

[0080] SL: Sub-layer

[0081] W SL-ETR1 W SL-ETR2 W SL-ETR3 W SL-ETR(n-1) W SL-ETRn W SL-EML1 W SL-EML2 Sublayer thickness

[0082] PH1, PH2, PH3: Pores

[0083] L PH1 L PH2 L PH3 : Length of the pore in the thickness direction

[0084] BL: Barrier Layer

[0085] S10: A method for manufacturing a light-emitting element according to an embodiment

[0086] S100: Steps for forming a hole transport region

[0087] S200: Steps for forming the light-emitting layer

[0088] S300: Steps for forming the electron transport region

[0089] S400: Steps for forming the second electrode

[0090] S210, S220, S310, S320, S330: Steps for forming sublayers

[0091] S211, S221, S311, S321, S331: Steps to provide the initial sublayer

[0092] S212, S222, S312, S322, S332: Steps for drying the initial sublayer Detailed Implementation

[0093] This invention can be modified in various ways and can take many forms. Specific embodiments will be illustrated in the accompanying drawings and described in detail herein. However, it should be understood that these are not intended to limit the invention to the specific forms disclosed, but rather to include all modifications, equivalents, and substitutions that are included within the concept and scope of the invention.

[0094] In this specification, when a constituent element (or region, layer, part, etc.) is referred to as being "on", "connected to", or "integrated with" another constituent element, it means that the constituent element can be directly configured / connected / integrated on the other constituent element, or a third constituent element can be configured between them.

[0095] The same reference numerals refer to the same constituent elements. Furthermore, in the drawings, the thickness, scale, and dimensions of the constituent elements are enlarged for the purpose of effectively illustrating the technical content. "And / or" includes all combinations that can be defined for the relevant constituent elements.

[0096] The terms "first," "second," etc., can be used to describe multiple constituent elements, but the constituent elements described above are not limited by these terms. These terms are used only to distinguish one constituent element from others. For example, without departing from the scope of this invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element. Singular expressions include plural expressions unless explicitly stated otherwise in the context.

[0097] In addition, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationship between the constituent elements shown in the accompanying drawings. These terms are relative concepts and are explained based on the directions indicated in the accompanying drawings.

[0098] Terms such as “including” or “having” should be understood as indicating the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof as described in the specification, and do not preclude the presence or additional possibilities of one or more other features or figures, steps, operations, constituent elements, components, or combinations thereof.

[0099] In this specification, "direct configuration" may mean that no layer, film, region, plate, etc., is added between it and other parts. For example, "direct configuration" may mean configuration without the use of additional components such as adhesive parts between two layers or two components.

[0100] In this specification, "regions / parts corresponding to each other" means "overlapping each other," and is not limited to having the same area and / or the same shape. Additionally, in this specification, "regions / parts overlapping each other" includes cases where overlapping regions / parts are indicated to at least partially overlap when viewed in a plane.

[0101] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning in the context of the relevant art, and shall not be construed as having overly idealized or formalistic meanings unless explicitly defined herein.

[0102] Hereinafter, with reference to the accompanying drawings, a light-emitting element according to an embodiment, an electronic device according to an embodiment, and a method for manufacturing a light-emitting element according to an embodiment will be described.

[0103] Figure 1a This is a block diagram of an electronic device according to one embodiment. (Refer to...) Figure 1a According to one embodiment, the electronic device EA may include a display module DM, a processor PR, a memory MR, and a power module PM.

[0104] The processor PR may include at least one of the following: central processing unit (CPU), application processor (AP), graphics processing unit (GPU), communication processor (CP), image signal processor (ISP), and controller.

[0105] The memory (MR) can store the data information required for the operation of the processor (PR) or the display module (DM). For example, if the processor (PR) runs an application program stored in the memory (MR), image data signals and / or input control signals are transmitted to the display module (DM), which processes the received signals to output image information through the display screen.

[0106] A power module PM may include a power supply module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of an electronic device EA.

[0107] At least one of the components of the aforementioned electronic device EA may be included within a display device according to one embodiment. Alternatively, a portion of a separate module functionally included in a single module may be included within the display device, while another portion may be provided separately from the display device. For example, the display device may include a display module DM according to an embodiment described later. The processor PR, memory MR, and power module PM may be provided as other devices not within the electronic device EA, but as a display device.

[0108] Figure 1b These are schematic diagrams of electronic devices according to various embodiments.

[0109] Reference Figure 1bThe various electronic devices applicable to the display device according to one embodiment may include not only image display electronic devices such as smartphones EA_1a, tablet PCs EA_1b, laptop computers EA_1c, TVs EA_1d, and desktop monitors EA_1e, but also wearable electronic devices including display modules such as smart glasses EA_2a, head-mounted displays EA_2b, and smartwatches EA_2c; vehicle electronic devices including display modules such as car dashboards, central dashboards, CIDs (Center Information Displays) configured on instrument panels, and room mirror displays EA_3.

[0110] The display device according to one embodiment can be applied to various electronic devices. In addition to the display device, the electronic device according to one embodiment may also include modules or devices with other additional functions.

[0111] Figure 2 This is a perspective view showing an electronic device according to an embodiment.

[0112] One embodiment of the electronic device EA may include a display device DD that displays an image via a display surface EA-IS. The display device DD may be housed within a housing HAU. The electronic device EA may include the display device DD and a control unit that controls the operation of the display device DD.

[0113] The display surface EA-IS of the electronic device EA can be rectangular in shape on a plane, the rectangular shape having a long side extending in a first direction DR1 and a short side extending in a second direction DR2 intersecting the first direction DR1. However, it is not limited to this, the display surface EA-IS can have various shapes such as circles or polygons.

[0114] In this specification, the third direction DR3 can be defined as a direction substantially perpendicular to the plane defined by the first direction DR1 and the second direction DR2. The front (or top) and back (or bottom) sides of the components constituting the electronic device EA can be opposite each other along the third direction DR3, and the normal direction of each of the front and back sides can be substantially parallel to the third direction DR3. The spacing between the front and back sides defined along the third direction DR3 can correspond to the thickness of the component.

[0115] In this specification, "on a plane" can be defined as the state observed in the third direction DR3. That is, "on a plane" can be described with reference to the plane defined by the first direction DR1 and the second direction DR2 together. In this specification, "on a cross section" can be defined as the state observed in the first direction DR1 or the second direction DR2. The directions indicated by the first to third directions DR1, DR2, and DR3 are relative concepts and can be converted to other directions.

[0116] exist Figure 2 The example shown is a tablet terminal as an electronic device EA. Electronic modules, camera modules, power modules, etc., mounted on the motherboard can be configured together with the display device DD in a bracket / housing HAU, etc., to form a tablet terminal. The embodiments are not limited thereto; the display device DD and display module according to one embodiment described below can be applied to large electronic devices such as televisions, monitors, or outdoor billboards, as well as small and medium-sized electronic devices such as personal computers, laptops, personal digital terminals, car navigation units, game consoles, smartphones, tablets, smartwatches, and cameras. Furthermore, these are merely illustrative examples; the display device DD according to one embodiment can also be used as other electronic devices without departing from the concept of the invention. The electronic device EA including the display device DD can also be referred to as a display device.

[0117] In one embodiment, an electronic device EA is shown, including a display device DD having a planar display surface, but is not limited thereto. The electronic device EA may also include a curved display surface or a three-dimensional display surface. For example, a three-dimensional display surface may also include multiple display areas indicating different directions from each other, and include a curved display surface. The electronic device EA according to this embodiment may be a flexible electronic device. A flexible electronic device may be a foldable electronic device capable of being folded.

[0118] like Figure 2 As shown, the display surface EA-IS includes an active area AA for displaying images and a border area NAA adjacent to the active area AA. The border area NAA is the area where no images are displayed. Figure 2 The icon image is shown as an example of an image. The active area AA can refer to the display area of ​​the display device DD, and the border area NAA can refer to the non-display area of ​​the display device DD.

[0119] like Figure 2 As shown, the active region AA can be a substantially quadrilateral shape. The term "substantially quadrilateral shape" includes not only quadrilateral shapes in the mathematical sense, but also quadrilateral shapes where the boundaries of curves are defined without defining vertices in the vertex region (or corner region).

[0120] The border region NAA can surround the active region AA. However, it is not limited to this, and the shape of the border region NAA can be deformed. For example, the border region NAA can be configured only on one side of the active region AA.

[0121] Figure 3 This is a perspective view of a display module according to an embodiment of the present invention. Figure 4 This is a cross-sectional view of a display module according to one embodiment. Figure 5 This is a cross-sectional view showing a display module according to one embodiment in further detail. It can be... Figure 4 Is with Figure 3 The cross-sectional view corresponding to the I-I' line. Figure 5 Is with Figure 3 The cross-sectional view corresponding to line II-II'. Refer to... Figure 3 The display module DM according to one embodiment, as described above, may include: Figure 2 The display device DD shown above.

[0122] Reference Figure 3 It can be that the display module DM includes a display surface IS, through which the display module DM displays images. The display surface IS of the display module DM can be connected to the electronic device EA ( Figure 2 EA-IS display surface Figure 2 Corresponding to.

[0123] The display surface IS can include a display area DA and a non-display area NDA. Multiple pixel areas PXA can be configured within the display area DA. Peripheral areas NPXA are configured around the pixel areas PXA. Pixel areas PXA can refer to luminescent areas, and peripheral areas NPXA can refer to non-luminescent areas.

[0124] Alternatively, no pixel region may be configured in the non-display area NDA of the display surface IS, and the non-display area NDA may surround the display area DA. However, it is not limited to this. In one embodiment of the present invention, the non-display area NDA may be omitted or configured only on one side of the display area DA.

[0125] Reference Figure 4 as well as Figure 5 According to one embodiment, the display module DM may include a display panel DP. The display panel DP may be a component that substantially generates image data. In one embodiment, the display panel DP may be included in an electronic device EA (...) in one embodiment. Figure 2 The display panel DP is a component that displays images. In one embodiment, the display panel DP can be a light-emitting display panel. In another embodiment, the display panel DP may include inorganic light-emitting materials such as quantum dots.

[0126] The display panel DP may include a substrate layer BS, a circuit layer DP-CL, a display layer EDL, and a packaging layer TFE, which are stacked sequentially on the third-party DR3.

[0127] The display layer (EDL) may include light-emitting elements (ED-R, ED-G, ED-B). Multiple pixel regions (PXA) Figure 3 Each of them can be a region from which light is emitted from each of the light-emitting elements ED-R, ED-G, and ED-B.

[0128] The encapsulation layer TFE can be directly disposed on the display layer EDL. The encapsulation layer TFE can cover the light-emitting elements ED-R, ED-G, and ED-B of the display layer EDL.

[0129] According to one embodiment, the display module DM may further include an optical component PP. The optical component PP may be disposed on the display panel DP. The optical component PP may be disposed on the display panel DP to control the reflected light at the display panel DP caused by external light.

[0130] According to one embodiment, the display module DM may include repeatedly configured in the display area DA. Figure 3 The entire display module DM comprises multiple pixel regions PXA. In one embodiment, the pixel regions PXA can be arranged in a stripe pattern on a plane. (See reference...) Figure 3 Multiple pixel regions PXA can be aligned along either the first direction DR1 or the second direction DR2. However, the embodiments are not limited to this, and the arrangement of pixel regions PXA can be pentiline. Arrangement or diamond (Diamond) Arrangement format.

[0131] In addition, Figure 3 The areas of the pixel regions PXA on the plane are similar as shown in the examples, but the embodiments are not limited to this. The areas of the pixel regions PXA on the plane can be different from each other depending on the wavelength range of the emitted light.

[0132] Reference Figure 3 as well as Figure 5 The pixel region PXA may include first to third pixel regions PXA-R, PXA-G, and PXA-B. In a display module DM according to one embodiment, the first to third pixel regions PXA-R, PXA-G, and PXA-B may be regions that are divided into each other on a plane and emit light of different wavelength regions.

[0133] Additionally, according to one embodiment, the display module DM may include a peripheral region NPXA disposed around the first to third pixel regions PXA-R, PXA-G, and PXA-B. The peripheral region NPXA defines the boundaries of the first to third pixel regions PXA-R, PXA-G, and PXA-B. The peripheral region NPXA may surround each of the first to third pixel regions PXA-R, PXA-G, and PXA-B. Structures preventing color mixing between the first to third pixel regions PXA-R, PXA-G, and PXA-B may be overlapped within the peripheral region NPXA, such as pixel delimiting films (PDLs).

[0134] Each of the first to third pixel regions PXA-R, PXA-G, and PXA-B can be a region defined by a pixel boundary layer (PDL). The peripheral region NPXA can be the region between adjacent first to third pixel regions PXA-R, PXA-G, and PXA-B, and is the region corresponding to the pixel boundary layer (PDL).

[0135] Each of the first to third pixel regions PXA-R, PXA-G, and PXA-B can be an area where light emitted from each of the first to third light-emitting elements ED-R, ED-G, and ED-B is emitted. The first to third pixel regions PXA-R, PXA-G, and PXA-B can be separated from each other on a plane.

[0136] The pixel defining film (PDL) can divide the first to third light-emitting elements ED-R, ED-G, and ED-B. The light-emitting layers EML-R, EML-G, and EML-B of the first to third light-emitting elements ED-R, ED-G, and ED-B can be disposed within the pixel openings OH defined in the pixel defining film (PDL) for division.

[0137] Pixel defining film (PDL) can be formed from polymeric resins. For example, PDL can be formed from polyacrylate or polyimide resins. In addition to polymeric resins, PDL can also include inorganic materials. PDL can be formed from light-absorbing substances or from black pigments or dyes. A PDL formed from black pigments or dyes can achieve a black pixel defining film. Carbon black or similar materials can be used as the black pigment or dye when forming the PDL, but the embodiments are not limited to this.

[0138] Furthermore, the pixel defining film (PDL) can be formed from inorganic materials. For example, the pixel defining film (PDL) can be made of silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) xN y Inorganic substances such as ) are formed.

[0139] The first to third pixel regions PXA-R, PXA-G, and PXA-B can be divided according to the color of the light generated from the first to third light-emitting elements ED-R, ED-G, and ED-B. For example, in a display module DM according to one embodiment, the first pixel region PXA-R corresponds to a red light-emitting region, the second pixel region PXA-G corresponds to a green light-emitting region, and the third pixel region PXA-B corresponds to a blue light-emitting region.

[0140] In a display module DM according to one embodiment, light-emitting elements ED-R, ED-G, and ED-B can emit light in different wavelength ranges from each other. For example, in one embodiment, the first light-emitting element ED-R may be equivalent to a red light-emitting element that emits red light, the second light-emitting element ED-G may be equivalent to a green light-emitting element that emits green light, and the third light-emitting element ED-B may be equivalent to a blue light-emitting element that emits blue light.

[0141] exist Figure 5 The diagram shows three pixel regions PXA-R, PXA-G, and PXA-B that are divided from each other, but the embodiment is not limited to this. According to one embodiment, the display module DM may also include four or more light-emitting regions that have different light-emitting characteristics from each other.

[0142] In a display panel (DP), the substrate layer (BS) can be a component that provides a base surface for configuring the display layer (EDL) and the circuit layer (DP-CL). The substrate layer (BS) can be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments are not limited to these; the substrate layer (BS) can be an inorganic layer, an organic layer, or a composite material layer.

[0143] In one embodiment, the circuit layer DP-CL may be disposed on the substrate layer BS, and the circuit layer DP-CL may include a plurality of transistors (not shown). The transistors (not shown) may each include a control electrode, an input electrode, and an output electrode. For example, the circuit layer DP-CL may include switching transistors and driving transistors for driving the light-emitting elements ED-R, ED-G, and ED-B of the display layer EDL.

[0144] The TFE encapsulation layer can cover the light-emitting elements ED-R, ED-G, and ED-B. The TFE encapsulation layer can seal the EDL display layer. The TFE encapsulation layer can be a thin-film encapsulation layer. Multiple TFE encapsulation layers can be stacked.

[0145] According to one embodiment, the encapsulation layer TFE may include at least one inorganic film (hereinafter, encapsulation inorganic film) and at least one organic film (hereinafter, encapsulation organic film). In one embodiment, the encapsulation layer TFE may include a first encapsulation inorganic film IOL1, an encapsulation organic film OL, and a second encapsulation inorganic film IOL2 sequentially disposed on the display layer EDL.

[0146] It is permissible to encapsulate inorganic films IOL1 and IOL2 to protect the EDL display layer from moisture / oxygen, and encapsulate organic films IOL to protect the EDL display layer from foreign matter such as dust particles. The encapsulated inorganic films IOL1 and IOL2 can include silicon nitrides, silicon oxynitrides, silicon oxides, titanium oxides, or aluminum oxides, etc., without any particular limitation.

[0147] According to one embodiment, the display module DM may further include an optical component PP. The optical component PP may be a reflection reduction layer that reduces reflectivity caused by external light. For example, the optical component PP may include a polarizing film containing a phase retarder and / or polarizer, a multilayer reflective layer for destructive interference reflected light, or a color filter configured corresponding to the pixel arrangement and emission color of the display panel DP. Alternatively, in one embodiment, the optical component PP may be omitted.

[0148] Reference Figure 5 In one embodiment, the optical component PP may include a substrate PP-BL and a color filter layer CFL.

[0149] The substrate PP-BL can be a component that provides a base surface for configuring color filter layers such as CFLs. The substrate PP-BL can be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments are not limited to these, and the substrate PP-BL can be an inorganic layer, an organic layer, or a composite material layer.

[0150] In one embodiment, the color filter layer CFL may include first to third color filters CF-R, CF-G, and CF-B. Each of the first to third color filters CF-R, CF-G, and CF-B may be configured to correspond to a first to third light-emitting element ED-R, ED-G, or ED-B. For example, the first color filter CF-R may be a red filter, the second color filter CF-G a green filter, and the third color filter CF-B a blue filter. Each of the first to third color filters CF-R, CF-G, and CF-B may be configured to correspond to a first to third pixel region PXA-R, PXA-G, or PXA-B.

[0151] Additionally, multiple color filters CF-R, CF-G, and CF-B, which transmit different types of light, can be overlapped with the surrounding area NPXA located between pixel areas PXA-R, PXA-G, and PXA-B. In the thickness direction, i.e., the third direction DR3, the multiple color filters CF-R, CF-G, and CF-B can be overlapped to delineate the boundaries between adjacent pixel areas PXA-R, PXA-G, and PXA-B. This increases the light-blocking effect of external light, achieving functions such as a black matrix. The overlapping structure of multiple color filters CF-R, CF-G, and CF-B can also prevent color mixing.

[0152] Each of the first to third color filters CF-R, CF-G, and CF-B may include a polymeric photosensitive resin and a pigment or dye. For example, the first color filter CF-R may include a red pigment or red dye, the second color filter CF-G may include a green pigment or green dye, and the third color filter CF-B may include a blue pigment or blue dye. However, the embodiments are not limited thereto; the third color filter CF-B may not include a pigment or dye. The third color filter CF-B may include a polymeric photosensitive resin but may not include a pigment or dye. The third color filter CF-B may be transparent. The third color filter CF-B may be formed from a transparent photosensitive resin.

[0153] The color filter layer CFL may also include a buffer layer BFL. For example, the buffer layer BFL may be a protective layer for the first to third color filters CF-R, CF-G, and CF-B. The buffer layer BFL may be an inorganic layer comprising at least one inorganic material selected from silicon nitride, silicon oxide, and silicon oxynitride. The buffer layer BFL may be formed from a single layer or multiple layers.

[0154] Additionally, the first color filter CF-R and the second color filter CF-G can be yellow filters. The first color filter CF-R and the second color filter CF-G can also be provided as a single unit, without being separate from each other.

[0155] Although not shown, the color filter layer CFL may also include a light-shielding portion (not shown). The light-shielding portion may be a black matrix. The light-shielding portion may be formed by organic or inorganic light-shielding materials containing black pigments or black dyes. The light-shielding portion can prevent light leakage and define the boundaries between adjacent color filters CF-R, CF-G, and CF-B.

[0156] In addition, with Figure 5 Unlike the cases shown, the optical component PP of the display module DM according to one embodiment may not include the color filter layer CFL.

[0157] In a display module DM according to one embodiment, each of the first to third light-emitting elements ED-R, ED-G, and ED-B may include a first electrode AE, a hole transport region HTR, a light-emitting layer EML-R, EML-G, EML-B, an electron transport region ETR, and a second electrode CE. Additionally, each of the light-emitting elements ED-R, ED-G, and ED-B may also include a cover layer CPL disposed on the second electrode CE.

[0158] The first electrode AE ​​can be exposed at the pixel opening OH of the pixel defining film PDL.

[0159] The second electrode CE can be disposed on the first electrode AE. The second electrode CE can be disposed opposite to the first electrode AE ​​through light-emitting layers EML-R, EML-G, and EML-B. The second electrode CE can be a cathode or an anode. In one embodiment, when the first electrode AE ​​is an anode, the second electrode CE can be a cathode; when the first electrode AE ​​is a cathode, the second electrode CE can be an anode. The second electrode CE can be a common electrode. The second electrode CE can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0160] The first electrode AE ​​can be configured corresponding to each of the pixel regions PXA-R, PXA-G, and PXA-B. The second electrode CE can be provided as a common layer for the entire pixel regions PXA-R, PXA-G, and PXA-B.

[0161] Alternatively, a hole transport region (HTR) can be configured between the first electrode AE ​​and the light-emitting layers EML-R, EML-G, and EML-B, and an electron transport region (ETR) can be configured between the light-emitting layers EML-R, EML-G, and EML-B and the second electrode CE. (Refer to...) Figure 5 The hole transport region (HTR) and electron transport region (ETR) can be provided as a common layer across the entire pixel regions PXA-R, PXA-G, and PXA-B, respectively. However, the embodiments are not limited to this; the hole transport region (HTR) and electron transport region (ETR) can be configured to correspond independently to each of the pixel regions PXA-R, PXA-G, and PXA-B.

[0162] exist Figure 5 In one embodiment shown, the emissive layers EML-R, EML-G, and EML-B of each of the first to third light-emitting elements ED-R, ED-G, and ED-B can be disposed within the pixel opening OH. That is, in one embodiment, the emissive layers EML-R, EML-G, and EML-B can be configured to correspond to each of the pixel regions PXA-R, PXA-G, and PXA-B. In one embodiment, the emissive layers EML-R, EML-G, and EML-B may include quantum dots.

[0163] In one embodiment, each of the first to third light-emitting elements ED-R, ED-G, and ED-B may further include a capping layer CPL. The capping layer CPL may be disposed above the second electrode CE. The capping layer CPL may comprise multiple layers or a single layer. (See reference...) Figure 5 In one embodiment of the display module DM, the overlay layer CPL can be provided as a common layer across the pixel regions PXA-R, PXA-G, and PXA-B.

[0164] exist Figure 5 In each of the first to third light-emitting elements ED-R, ED-G, and ED-B shown in the figure, the stacked structure of the hole transport region HTR, the light-emitting layers EML-R, EML-G, EML-B, and the electron transport region ETR disposed between the first electrode AE ​​and the second electrode CE can be referred to as a light-emitting unit. Figure 5 The illustration shows each of the first to third light-emitting elements ED-R, ED-G, and ED-B comprising one light-emitting unit, but the embodiments are not limited thereto. In one embodiment, the first to third light-emitting elements ED-R, ED-G, and ED-B may each independently comprise multiple light-emitting units stacked in the thickness direction between the first electrode AE ​​and the second electrode CE. For example, the first to third light-emitting elements ED-R, ED-G, and ED-B may each independently be a series-connected light-emitting element comprising multiple light-emitting layers stacked in the thickness direction.

[0165] Figures 6 to 9 These are cross-sectional views of a light-emitting element according to one embodiment. Figures 6 to 9 An exemplary embodiment includes a display module DM ( Figure 3 One of the multiple light-emitting elements in a structure. Figures 6 to 9 The light-emitting elements ED, ED-a, ED-b, and ED-c shown represent those included in Figure 5 The cross-sectional view is exemplarily shown for the first to third light-emitting elements ED-R, ED-G, and ED-B in the display layer EDL.

[0166] Reference Figure 6 According to one embodiment, the light-emitting element ED may include a first electrode AE, a second electrode CE facing the first electrode AE, a hole transport region HTR disposed between the first electrode AE ​​and the second electrode CE, a light-emitting layer EML, and an electron transport region ETR. Additionally, the light-emitting element ED may also include a capping layer CPL disposed on the second electrode CE.

[0167] The first electrode AE ​​is conductive. The first electrode AE ​​can be formed of a metallic material, a metallic alloy, or a conductive compound. The first electrode AE ​​can be an anode or a cathode. Alternatively, the first electrode AE ​​can be a pixel electrode. The first electrode AE ​​can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The first electrode AE ​​can include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn, and Zn, a compound selected from two or more of these, a mixture selected from two or more of these, or an oxide thereof.

[0168] When the first electrode AE ​​is a transmissive electrode, the first electrode AE ​​may include a transparent metal oxide, such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. When the first electrode AE ​​is a semi-transmissive electrode or a reflective electrode, the first electrode AE ​​may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg) or materials having two or more multilayer structures selected from them (such as LiF / Ca (a stacked structure of LiF and Ca), LiF / Al (a stacked structure of LiF and Al)). Alternatively, the first electrode AE ​​can be a multi-layer structure comprising a reflective or semi-transparent film formed from the aforementioned materials and a transparent conductive film formed from ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. For example, the first electrode AE ​​can have a three-layer structure of ITO / Ag / ITO, but is not limited thereto.

[0169] The second electrode CE can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. When the second electrode CE is a transmissive electrode, it can be formed of a transparent metal oxide, such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc.

[0170] When the second electrode CE is a semi-transparent or reflective electrode, the second electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, Yb, W, or compounds or mixtures thereof (e.g., AgMg, AgYb, or MgYb) or materials having two or more multilayer structures selected from them (such as LiF / Ca, LiF / Al). Alternatively, the second electrode CE may be a multilayer structure including a reflective or semi-transparent film formed from the aforementioned materials and a transparent conductive film formed from ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. For example, the second electrode CE may include the aforementioned metallic materials, a combination of two or more metallic materials selected from the aforementioned metallic materials, or oxides of the aforementioned metallic materials, etc.

[0171] In one embodiment, the overlay CPL may include multiple layers or a single layer.

[0172] In one embodiment, the capping layer CPL can be an organic layer or an inorganic layer. For example, when the capping layer CPL includes inorganic materials, the inorganic materials may include alkali metal compounds such as LiF, alkaline earth metal compounds such as MgF2, SiON, and SiN. X SiO y wait.

[0173] For example, when the capping layer CPL includes an organic compound, the organic compound may include α-NPD, NPB, TPD, m-MTDATA, Alq3, CuPc, TPD15 (N4,N4,N4',N4'-tetra(biphenyl-4-yl)biphenyl-4,4'-diamine; N4,N4,N4',N4'-tetra(biphenyl-4-yl)biphenyl-4,4'-diamine), TCTA (4,4',4"-tris(carbazol-9-yl)triphenylamine; 4,4',4"-Tris(carbazol sol-9-yl)triphenylamine), or may include epoxy resins or acrylate resins such as methacrylates. However, the embodiments are not limited thereto, and the capping layer CPL may include at least one of compounds P1 to P5 as shown below.

[0174]

[0175] The refractive index of the capping layer CPL can be 1.6 or higher. Specifically, for light in the wavelength range of 550 nm to 660 nm, the refractive index of the capping layer CPL can be 1.6 or higher.

[0176] A hole transport region (HTR) can be configured between the first electrode (AE) and the light-emitting layer (EML). The hole transport region (HTR) can include known hole transport materials.

[0177] When the light-emitting element is manufactured in a manner that, according to the method described later, only the electron transport region (ETR) comprises multiple sublayers (SL), the hole transport region (HTR) can be formed by known methods. For example, the hole transport region (HTR) can be formed using various methods such as vacuum evaporation, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and laser thermal transfer.

[0178] The hole transport region (HTR) can have a single layer formed of a single material, a single layer formed of multiple different materials, or a multilayer structure with multiple layers formed of multiple different materials. The hole transport region (HTR) can include at least one of a hole injection layer, a hole transport layer, a buffer layer or a light-emitting auxiliary layer, and an electron blocking layer.

[0179] Hole transport region (HTR) may include phthalocyanine compounds such as copper phthalocyanine, and DNTPD (N 1 N 1' -([1,1'-biphenyl]-4,4'-diyl)bis(N) 1 -Phenyl-N 4 N 4' -di-m-tolylphenyl-1,4-diamine);

[0180] N 1 N 1' -([1,1'-biphenyl]-4,4'-diyl)bis(N 1 -phenyl-N 4 N 4'-di-m-tolylbenzene-1,4-diamine)), m-MTDATA(4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine; 4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine), TDATA(4,4',4"-tris(N,N-diphenylamino)triphenylamine; 4,4',4"-Tris(N,N-diphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris[N-(2- [Naphthyl]-N-phenylamino]-triphenylamine; 4,4',4"-tris[N-(2-naphthyl)-N-phenylamino]-triphenylamine), PEDOT / PSS (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate); Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), PANI / DBSA (polyaniline / dodecylbenzenesulfonic acid); PANI / CSA (polyaniline / camphor sulfonic acid). sulfonicacid), PANI / PSS (polyaniline / poly(4-styrenesulfonate); Polyaniline / Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine; N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), polyetherketones including triphenylamine (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetra(pentafenyl)] [4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate]], HATCN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile), etc.

[0181] Hole transport region (HTR) can also include carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, and TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine; N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine). Triphenylamine derivatives such as TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), and TAPC (4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline]). Examples of such products include bis[N,N-bis(4-methylphenyl)benzenamine], HMTPD(4,4'-bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl; 4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), and mCP(1,3-bis(N-carbazolyl)benzene).

[0182] In addition, the hole transport region (HTR) may include CzSi (9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole; 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole), CCP (9-phenyl-9H-3,9'-bicarbazole; 9-phenyl-9H-3,9'-bicarbazole) or mDCP (1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene; 1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene), etc.

[0183] The light-emitting layer (EML) comprises quantum dots. In this specification, quantum dot refers to a crystallization of a semiconductor compound. Quantum dots can emit light of various wavelengths depending on the size of the crystal. Furthermore, quantum dots can emit light of various wavelengths by adjusting the elemental ratios within the semiconductor compound.

[0184] The diameter of quantum dots can range from, for example, about 1 nm to 10 nm. Quantum dots can be synthesized through wet chemical processes, organometallic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes.

[0185] The wet chemical process in quantum dot manufacturing involves growing quantum dot crystals by mixing organic solvents and precursor materials. During quantum dot crystal growth, the organic solvent naturally acts as a dispersant on the surface of the quantum dot crystals, regulating the growth process. Therefore, the wet chemical process is easier and more cost-effective than vapor deposition methods such as organometallic chemical vapor deposition or molecular beam epitaxy, allowing for better control of quantum dot particle growth.

[0186] The nucleus of a quantum dot can be selected from group II-VI compounds, group III-V compounds, group III-VI compounds, group I-III-VI compounds, group IV-VI compounds, group II-IV-V compounds, group IV elements, group IV compounds, and combinations thereof.

[0187] Group II-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; and compounds selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, C Ternary compounds selected from the group consisting of dZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof, and quaternary compounds selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. Group II-VI semiconductor compounds may also include Group I metals and / or Group IV elements. Group I-II-VI compounds may include CuZnS, and Group II-IV-VI compounds may include ZnSnS, etc. Group I-II-IV-VI compounds can be selected from the following quaternary compounds: those selected from the group consisting of Cu2ZnSnS2, Cu2ZnSnS4, Cu2ZnSnSe4, Ag2ZnSnS2 and mixtures thereof.

[0188] III-VI group compounds may include binary compounds such as In2S3 and In2Se3, ternary compounds such as InGaS3 and InGaSe3, or any combination thereof.

[0189] Group I-III-VI compounds can be selected from the following compounds: ternary compounds selected from the group consisting of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2 and mixtures thereof, or quaternary compounds such as AgInGaS2 and CuInGaS2.

[0190] Group III-V compounds may be selected from the following groups of compounds: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Group III-V compounds may also include Group II metals. For example, InZnP, etc., can be selected as a group III-II-V compound.

[0191] Group IV-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0192] Examples of II-IV-V group compounds can be ternary compounds selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, CdGeP2, and mixtures thereof.

[0193] As a group IV element, it can be selected from the group consisting of Si, Ge, and mixtures thereof. As a group IV compound, it can be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0194] The elements in multi-component compounds, such as binary, ternary, and quaternary compounds, can exist in particles at uniform or non-uniform concentrations. That is, the chemical formula for quantum dots indicates the types of elements included in the quantum dot compound, and the element ratios within the compound can vary.

[0195] At this point, binary, ternary, or quaternary compounds can exist within the particle at a uniform concentration, or exist within the same particle in states with partially different concentration distributions. Alternatively, a core / shell structure can exist with one quantum dot surrounding other quantum dots. In the core / shell structure, there can be a concentration gradient where the concentration of the element in the shell decreases as it moves towards the core.

[0196] The shell of a quantum dot can function as a protective layer to prevent chemical denaturation of the nucleus and maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. Examples of shells for quantum dots include oxides of metals or non-metals, semiconductor compounds, or combinations thereof.

[0197] For example, metal or non-metal oxides can be exemplified as binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0198] In addition, examples of semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0199] For example, when the quantum dots of group III-V compounds have a core / shell structure, the core may include InP or InZnP, and the shell may include ZnSeS or a double-shell structure having ZnSe / ZnS. However, the embodiments are not limited to this, and the quantum dots may have a combination of core and shell selected from the above-described semiconductor compounds.

[0200] Quantum dots can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, which can improve color purity or color reproducibility. In addition, light emitted by such quantum dots can be emitted in all directions, thereby improving the wide viewing angle.

[0201] In addition, the form of quantum dots (QDPs) is not particularly limited to the forms commonly used in the field, but more specifically, quantum dots can be in the form of spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplates, etc.

[0202] Quantum dots can have their band gap adjusted by regulating their size or the elemental ratios within the quantum dot compound, thus enabling the acquisition of light across various wavelength ranges within a quantum dot-based light-emitting layer. Therefore, by using quantum dots as described above (using quantum dots of different sizes or with different elemental ratios within the quantum dot compound), light-emitting elements emitting various wavelengths of light can be realized. Specifically, the size of the quantum dots or the elemental ratios within the quantum dot compound can be adjusted to emit red, green, and / or blue light. Furthermore, quantum dots can be configured to combine various colors of light to emit white light.

[0203] When the luminescent layer (EML) and / or the electron transport region (ETR) comprises multiple sublayers (SLs, as described later), these sublayers can be organic-inorganic composite layers. Organic-inorganic composite layers are layers formed by a combination of organic and inorganic substances. Organic substances can be selected from Alq3 (Tris(8-hydroxyquinolinato)aluminum), TPBi (2,2′,2″-(1,3,5-benzyl)-tris(1-phenyl-1-H-benzimidazole), and BPhen (Bathophenanthroline), etc., while inorganic substances can be selected from ZnO, TiO2, and Cs2CO3, etc. However, the organic and inorganic materials are not limited to these.

[0204] An electron transport region (ETR) can be configured between the light-emitting layer (EML) and the second electrode (CE). The ETR can include known electron transport materials.

[0205] When the light-emitting element is manufactured by the manufacturing method of the embodiment described later, such that only the light-emitting layer EML comprises multiple sublayers SL, the electron transport region ETR can be formed by known methods. For example, the electron transport region ETR can be formed using various methods such as vacuum evaporation, spin coating, casting, LB (Langmuir-Blodgett) method, inkjet printing, laser printing, and laser thermal transfer.

[0206] The electron transport region (ETR) can have a single layer formed of a single material, a single layer formed of multiple different materials, or a multilayer structure having multiple layers formed of multiple different materials. The ETR can include stacked electron transport layers and electron injection layers. Additionally, the ETR can include at least one of a hole blocking layer, an electron transport layer, a buffer layer, and an electron injection layer.

[0207] In one embodiment, the electron transport region (ETR) may include a metal oxide. The ETR may include at least one type of metal oxide such as Li₂O, BaO, ZnO, ZnMgO, or MgO.

[0208] The electron transport region (ETR) may also include other known electron transport materials. For example, the ETR may include Alq3 (tris(8-hydroxyquinolinato)aluminum), 1,3,5-tris[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzo) (2-(4-(N-phenylbenzoimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene), TPBi(1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene), BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline). nthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ (4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole). -triazole), tBu-PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole; 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum; Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(bis(benzoquinoline-10-hydroxy)beryllium;berylliumbis (benzoquinolin-10-olate), ADN (9,10-di(naphthalene-2-yl)anthracene), BmPyPhB (1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene), and mixtures thereof, or Liq (8-hydroxyl-Lithium quinolate), etc.

[0209] In addition, the electron transport region (ETR) can include metal halides such as LiF, NaCl, CsF, RbCl, RbI, CuI, and KI, lanthanide metals such as Yb, and co-evaporation materials of the aforementioned metal halides and lanthanide metals. For example, as co-evaporation materials, the ETR can include KI:Yb, RbI:Yb, LiF:Yb, etc.

[0210] The electron transport region (ETR) can also be formed from a mixture of an electron transport material and an insulating organometallic salt. The organometallic salt can be a material with a band gap of approximately 4 eV or higher. Specifically, for example, the organometallic salt can include metal acetates, metal benzoates, metal acetoacetates, metal acetylacetones, or metal stearates.

[0211] In addition to the materials mentioned above, the electron transport region (ETR) may also include at least one of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), TSPO1 (diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide), and Bphen (4,7-diphenyl-1,10-phenanthroline), but the examples are not limited thereto.

[0212] In one embodiment of the light-emitting element ED, at least one of the light-emitting layer EML and the electron transport region ETR includes a plurality of sublayers SL divided in the thickness direction. Figure 6 The diagram shows that the electron transport region (ETR) comprises n sublayers (SL) divided along the thickness direction. Figure 7 The example illustrates an electron transport region (ETR) comprising three sublayers SL-a divided in the thickness direction. Figure 8The example illustrates a light-emitting layer EML comprising two sublayers SL-b divided in the thickness direction. Figure 9 The example illustrates an electron transport region (ETR) comprising three sub-layers SL-cETR divided in the thickness direction, and an emissive layer (EML) comprising two sub-layers SL-cEML divided in the thickness direction. However, the embodiments are not limited thereto.

[0213] The H concentration, measured along the thickness direction of multiple sublayers SL, has a minimum or maximum value at the interface between the multiple sublayers SL. The "thickness direction" can be a third direction DR3. Therefore, even if the multiple sublayers SL are made of the same material, they can be separated from each other by the interfaces between them. For example, when the H concentration is measured along the thickness direction of the multiple sublayers SL, there is a change in H concentration at the interface between the first sublayer SL-ETR1 and the second sublayer SL-ETR2, where the H concentration has a minimum or maximum value, thus allowing the first sublayer SL-ETR1 and the second sublayer SL-ETR2 to be separated.

[0214] The change in H concentration at the interface between sublayers SL can be due to the formation of multiple sublayers SL using a discontinuous printing method. A discontinuous printing method refers to a method in which the provision and drying of the preliminary sublayer are not done in a single step, but rather through multiple repetitions during the formation of the light-emitting layer EML and / or electron transport region ETR by inkjet printing. That is, the change in H concentration at the interface between sublayers SL can be due to the fact that the steps for forming each sublayer SL-ETR1 to SL-ETRn include a step of providing a preliminary sublayer and a step of drying the preliminary sublayer. For example, the step of forming the first sublayer SL-ETR1 includes a step of drying the first preliminary sublayer after the step of providing the first preliminary sublayer; however, during the drying process, the H concentration on the first preliminary sublayer may decrease or increase due to evaporation or contamination. Therefore, when a second preliminary sublayer is provided on top of the first sublayer SL-ETR1 after the formation of the first sublayer SL-ETR1, and the second preliminary sublayer is dried to provide the second sublayer SL-ETR2, the H concentration at the interface between the first sublayer SL-ETR1 and the second sublayer SL-ETR2 can have a minimum or maximum value. However, the reasons for the change in H concentration at the interface between sublayers SL are not limited to the manufacturing method described above.

[0215] For the same reason, variations in F concentration may occur at the interfaces between sublayers (SL). That is, when measuring F concentration along the thickness direction, multiple sublayers (SL) may have minimum or maximum values ​​at the interfaces between them.

[0216] In one embodiment, the multiple sublayers SL can be organic-inorganic composite layers. The light-emitting layer EML and / or the electron transport region ETR can be layers comprising both organic and inorganic materials. In this case, the light-emitting elements ED, ED-a, ED-b, and ED-c can exhibit excellent optical properties.

[0217] In one embodiment, the thickness of multiple sublayers SL can be the same. (See reference...) Figure 6 When the electron transport region ETR has multiple sublayers SL, the first thickness W of the first sublayer SL-ETR1 is... SL-ETR1 up to the nth thickness W of the nth sublayer SL-ETRn SL-ETRn They can be the same.

[0218] Reference Figure 7 When the electron transport region ETR has multiple sublayers SL-a, the first thickness W of the first sublayer SL-ETR1 SL-ETR1 The second thickness W of the second sublayer SL-ETR2 SL-ETR2 and the third thickness W of the third sublayer SL-ETR3 SL-ETR3 They can be the same.

[0219] Reference Figure 8 When the light-emitting layer EML has multiple sublayers SL-b, the first thickness W of the first sublayer SL-EML1 is... SL-EML1 And the second thickness W of the second sublayer SL-EML2 SL-EML2 They can be the same.

[0220] Reference Figure 9 It can be that when the electron transport region ETR has multiple sublayers SL-cETR and the light-emitting layer EML also has multiple sublayers SL-cEML, the first thickness W of the first sublayer SL-ETR1 in the electron transport region ETR is... SL-ETR1 The second thickness W of the second sublayer SL-ETR2 SL-ETR2 And the third thickness W of the third sublayer SL-ETR3 SL-ETR3 Similarly, in the light-emitting layer EML, the first thickness W of the first sublayer SL-EML1 SL-EML1 And the second thickness W of the second sublayer SL-EML2 SL-EML2 The same. However, the thickness W of each sublayer SL-ETR1, SL-ETR2, and SL-ETR3 in the electron transport region ETR is the same. SL-ETR1 W SL-ETR2 W SL-ETR3 And the thickness W of each sublayer in the light-emitting layer EML SL-EML1 W SL-EML2 They can be the same as or different from each other. Figures 6 to 9In this context, when the thicknesses of multiple sublayers SL, SL-a, SL-b, SL-cETR, and SL-cEML are the same, the display quality of light-emitting elements ED, ED-a, ED-b, and ED-c can be excellent.

[0221] In one embodiment, the number of sub-layers SL can be more than two and less than five. When the number of sub-layers SL is more than six, the thickness of each sub-layer SL-ETR1 to SL-ETRn may become excessively thin, making it difficult to manufacture a uniform thickness, which may reduce the display quality of the light-emitting element.

[0222] Figure 10 This is a cross-sectional view of a light-emitting element according to one embodiment. Figure 10 Detailed illustration Figure 7 Electronic Transmission Region (ETR) in the region.

[0223] Reference Figure 10 Multiple sublayers SL-a may include pores PH1, PH2, and PH3. The first sublayer SL-ETR1 may include a first pore PH1. The second sublayer SL-ETR2 may include a second pore PH2. The third sublayer SL-ETR3 may include a third pore PH3. Each pore PH1, PH2, and PH3 may have a length L in the thickness direction of the multiple sublayers SL-a. PH1 L PH2 L PH3 .

[0224] In one embodiment, the length L of each pore PH1, PH2, PH3 in the thickness direction of the plurality of sublayers SL-a is... PH1 L PH2 L PH3 It can be the thickness W of each sublayer SL-ETR1, SL-ETR2, SL-ETR3 SL-ETR1 W SL-ETR2 W SL-ETR3 Below is the length L of the first pore PH1 in the thickness direction. PH1 It can be the first thickness W of the first sublayer SL-ETR1 SL-ETR1 Below. The length L of the second pore PH2 in the thickness direction. PH2 It can be the second thickness W of the second sublayer SL-ETR2 SL-ETR2 Below. The length L of the third pore PH3 in the thickness direction. PH3 It can be the third thickness W of the third sublayer SL-ETR3 SL-ETR3 Below. When the length L of each pore PH1, PH2, PH3 in the thickness direction of multiple sublayers SL-a... PH1 L PH2 L PH3The thickness W of each sublayer SL-ETR1, SL-ETR2, and SL-ETR3 SL-ETR1 W SL-ETR2 W SL-ETR3 In this way, the diffusion of material in layers directly disposed with multiple sublayers SL-a can be suppressed, thereby enabling the light-emitting element ED-a to exhibit excellent light-emitting characteristics. For example, as Figure 10 As shown, when the length L of the first pore PH1 in the electron transport region ETR in the thickness direction is... PH1 The first thickness W of the first sublayer SL-ETR1 SL-ETR1 The following can suppress the diffusion path of material from the emissive layer (EML) to the electron transport region (ETR). For example, such as... Figure 10 As shown, when the length L of the third pore PH3 in the electron transport region ETR in the thickness direction is... PH3 The third thickness W of the third sublayer SL-ETR3 SL-ETR3 The following can suppress the diffusion path of the material of the second electrode (CE) into the electron transport region (ETR). This can also be achieved when the light-emitting layer (EML) comprises multiple sublayers. Figure 8 The case where both the light-emitting layer (EML) and the electron transport region (ETR) consist of multiple sublayers ( Figure 9 The same principle applies below.

[0225] In one embodiment, the pores PH1, PH2, and PH3 may not be connected to the pores of the adjacent sublayers SL-ETR1, SL-ETR2, and SL-ETR3. The first pore PH1 may not be connected to the second pore PH2. The second pore PH2 may not be connected to the third pore PH3. When the pores in the light-emitting layer EML and / or the electron transport region ETR are connected, material from adjacent layers may flow in through the connected pores. This can lead to a decrease in the quality of the light-emitting element. Conversely, in the light-emitting element ED-a of one embodiment, the pores PH1, PH2, and PH3 are not connected to each other and are each disconnected, thereby blocking the diffusion path of material from adjacent layers. Therefore, the light-emitting element ED-a of one embodiment can have excellent display quality and reliability.

[0226] Figure 11 as well as Figure 12 These are cross-sectional views of a light-emitting element according to one embodiment.

[0227] In one embodiment, the light-emitting elements ED-d and ED-e may further include a blocking layer BL directly disposed on at least one of the surfaces above the light-emitting layer EML, below the light-emitting layer EML, above the electron transmission region ETR, and below the electron transmission region ETR. Figure 11 An exemplary illustration also includes a barrier layer BL disposed directly above the electronic transmission region ETR. Figure 12An example is shown that a blocking layer BL is also included, which is disposed directly on top of the light-emitting layer EML, but is not limited thereto.

[0228] The barrier layer (BL) is a layer in light-emitting elements (ED-d) and ED-e that blocks the diffusion of interlayer materials. Because the barrier layer BL in ED-d and ED-e elements prevents interlayer material diffusion, the ED-d and ED-e elements can exhibit excellent device characteristics. The barrier layer BL can be an organic film, an inorganic film, or an organic-inorganic composite film. The material of the barrier layer BL can include, but is not limited to, Yb, Ag, Mg, etc.

[0229] Reference Figure 11 In one embodiment of the light-emitting element ED-d, a blocking layer BL can be disposed between the electron transport region ETR and the second electrode CE to suppress the diffusion of the metal material of the second electrode CE, such as Ag, into the electron transport region ETR, and thus the diffusion of interlayer materials such as blocking layer materials. (See reference...) Figure 12 In one embodiment of the light-emitting element ED-e, the blocking layer BL can be disposed between the light-emitting layer EML and the electron transport region ETR to suppress the diffusion of quantum dot components such as Se in the light-emitting layer EML into the electron transport region ETR, and thus block the diffusion of interlayer materials.

[0230] In one embodiment of the light-emitting elements ED-d and ED-e, the multiple sublayers SL-d and SL-e may each independently further include at least one of Al2O3, TiO2, SiO2, BaSO4, Ta2O5, PbCl2, PbBr2, PbI2, ITO (indium tin oxide), Ag, ZnO, SnCl2, SnBr2, SnI2, SnO, PVP (polyvinylpyrrolidone), and PMMA (polymethyl methacrylate). In one embodiment of the light-emitting element ED-d, when the electron transport region ETR includes multiple sublayers SL-d, in addition to the electron transport material, the sublayers SL-d may independently include at least one of Al2O3, TiO2, SiO2, BaSO4, Ta2O5, PbCl2, PbBr2, PbI2, ITO (indium tin oxide), Ag, ZnO, SnCl2, SnBr2, SnI2, SnO, PVP (polyvinylpyrrolidone), and PMMA (polymethyl methacrylate). In addition, in one embodiment of the light-emitting element ED-e, when the light-emitting layer EML includes multiple sub-layers SL-e, in addition to the light-emitting material, the sub-layers SL-e may independently include at least one of Al2O3, TiO2, SiO2, BaSO4, Ta2O5, PbCl2, PbBr2, PbI2, ITO (indium tin oxide), Ag, ZnO, SnCl2, SnBr2, SnI2, SnO, PVP (polyvinylpyrrolidone), and PMMA (polymethyl methacrylate).

[0231] The substances such as Al2O3 included as additional materials in the sublayers can function as density-increasing additives. Al2O3 and similar substances can increase the physical density of multiple sublayers SL-d and SL-e, thereby preventing the inflow of material into adjacent layers into the light-emitting layer EML and / or the electron transport region ETR, thus improving the material purity of each layer in the light-emitting element.

[0232] Reference Figures 6 to 12 The light-emitting elements ED, ED-a, ED-b, ED-c, ED-d, and ED-e described in one embodiment may be included in an electronic device of one embodiment.

[0233] Reference Figure 2 as well as Figure 3 Alternatively, in one embodiment, the electronic device EA may include a display device DD comprising a display module DM that displays images. The display module DM includes a plurality of light-emitting elements, each of which includes the features of a light-emitting element in one embodiment described above.

[0234] An electronic device according to one embodiment may include the light-emitting element of one embodiment described above to exhibit excellent display quality and excellent reliability characteristics.

[0235] The following is for reference Figures 13 to 15 A method for manufacturing a light-emitting element according to an embodiment will be described below. In the description of the method for manufacturing a light-emitting element according to an embodiment, the method described above will not be the same as that described with reference to the present invention. Figures 6 to 12 The content related to the light-emitting element of one embodiment described herein is repeated, and the main difference is explained.

[0236] Figure 13 This is a flowchart illustrating a method for manufacturing a light-emitting element according to an embodiment. Figure 14 as well as Figure 15 These are diagrams illustrating detailed steps in a method for manufacturing a light-emitting element according to one embodiment.

[0237] Reference Figures 13 to 15One embodiment of the manufacturing method (S10) of the light-emitting element includes the steps of forming a hole transport region (S100), forming a light-emitting layer (S200), forming an electron transport region (S300), and forming a second electrode (S400). Specifically, a method for manufacturing a light-emitting element (S10) in one embodiment includes the steps of forming a hole transport region on a first electrode (S100), forming a light-emitting layer including quantum dots on the hole transport region (S200), forming an electron transport region on the light-emitting layer (S300), and forming a second electrode on the electron transport region (S400). At least one of the steps of forming the light-emitting layer and forming the electron transport region includes multiple steps of forming sublayers (S210, S220, S310, S320, S330). The step of forming sublayers (S210, S220, S310, S320, S330) includes the steps of providing a preliminary sublayer (S211, S221, S311, S321, S331) and drying the preliminary sublayer (S212, S222, S312, S322, S332).

[0238] Figure 14 The illustration shows a step (S200) in a method for manufacturing a light-emitting element in which the light-emitting layer comprises a plurality of sub-layers divided in the thickness direction. An exemplary method for manufacturing a light-emitting element whose light-emitting layer includes a first sub-layer and a second sub-layer is shown, but the number of steps for forming the sub-layers is not limited thereto. The step of forming the first sub-layer (S210) includes a step of providing a first preliminary sub-layer (S211) and a step of drying the first preliminary sub-layer (S212). The step of forming the second sub-layer (S220) includes a step of providing a second preliminary sub-layer (S221) and a step of drying the second preliminary sub-layer (S222).

[0239] Figure 15 The following step (S300) is illustrated in a method for manufacturing a light-emitting element in which the electron transport region comprises multiple sub-layers divided in the thickness direction. An exemplary method for manufacturing a light-emitting element whose electron transport region comprises first to third sub-layers is shown, but the number of steps for forming sub-layers is not limited thereto. The step of forming the first sub-layer (S310) includes a step of providing a first preliminary sub-layer (S311) and a step of drying the first preliminary sub-layer (S312). The step of forming the second sub-layer (S320) includes a step of providing a second preliminary sub-layer (S321) and a step of drying the second preliminary sub-layer (S322). The step of forming the third sub-layer (S330) includes a step of providing a third preliminary sub-layer (S331) and a step of drying the third preliminary sub-layer (S332).

[0240] In the steps of drying the preliminary sublayer (S212, S222, S312, S322, S332), the H concentration on the surface of the preliminary sublayer may decrease or increase due to evaporation or contamination. Therefore, in a light-emitting element manufactured by the light-emitting element manufacturing method of one embodiment, the H concentration measured along the thickness direction of the multiple sublayers can have a maximum or minimum value at the interface between the multiple sublayers. In the steps of drying the preliminary sublayer (S212, S222, S312, S322, S332), the F concentration on the surface of the preliminary sublayer may decrease or increase due to evaporation or contamination. Therefore, in a light-emitting element manufactured by the light-emitting element manufacturing method of one embodiment, the F concentration measured along the thickness direction of the multiple sublayers can have a maximum or minimum value at the interface between the multiple sublayers.

[0241] In the steps of drying the preliminary sublayer (S212, S222, S312, S322, S332), pores can be generated in the sublayer. Conventionally, if the light-emitting layer and / or electron transport region are formed only once, long pores are generated in the thickness direction of the light-emitting layer and / or electron transport region during the drying process, leading to diffusion of adjacent layer material during lamination and thus a decrease in the display quality of the light-emitting element. When the light-emitting layer and / or electron transport region are formed multiple times, multiple laminations and drying processes are performed, which has the effect of filling the pores of the lower layer when the upper layer is laminated, thus enabling the manufacture of a light-emitting element with a reduced number of pores. Furthermore, the different locations of the pores between the upper and lower layers can block the diffusion path of material from adjacent layers. Therefore, the light-emitting element manufactured by the light-emitting element manufacturing method of one embodiment exhibits excellent display quality and reliability.

[0242] In one embodiment, the initial sublayer can be provided by inkjet printing. Pores are generated during the drying process of the initial sublayer provided by inkjet printing, but when multiple sublayers are formed to provide a light-emitting layer or electron transport region, it can have the effect of filling the pores of the lower layers when the upper layers are stacked, thereby minimizing pore formation.

[0243] In one embodiment, the multiple sublayers formed by repeating the sublayer formation steps can be organic-inorganic composite layers. The light-emitting layer (EML) and / or the electron transport region (ETR) can both be layers comprising organic and inorganic materials. In this case, the light-emitting element can exhibit excellent optical properties.

[0244] In one embodiment, the step of forming sublayers may be repeated two to five times. When the step of forming sublayers is repeated more than six times, the thickness of each sublayer may become excessively thin, making it difficult to manufacture a uniform thickness, which may reduce the display quality of the light-emitting element.

[0245] In one embodiment, the material of the initial sublayer provided in the multiple steps of forming the sublayer can be the same. During the manufacturing process, it is possible to stack multiple sublayers without changing the material, thus enabling the large-area fabrication of the light-emitting element in a rapid manner.

[0246] In one embodiment, the thickness of the multiple sub-layers can be the same. When the thickness of the multiple sub-layers is the same, the display quality of the light-emitting element can be excellent.

[0247] In one embodiment, at least one of the steps before forming the light-emitting layer (S200), before forming the electron transport region (S300), and before forming the second electrode (S400) may further include the step of forming a barrier layer. Therefore, the barrier layer can be directly disposed on at least one of the surfaces above the light-emitting layer, below the light-emitting layer, above the electron transport region, and below the electron transport region to block the diffusion of interlayer material in the light-emitting element, thus the light-emitting element of one embodiment exhibits excellent element characteristics.

[0248] The present invention has been described above with reference to preferred embodiments. However, it will be understood by those skilled in the art or those with ordinary knowledge of the art that various modifications and alterations can be made to the present invention without departing from the concept and scope of the invention as set forth in the appended claims.

[0249] Therefore, the technical scope of this invention is not limited by the details described in the specification, but rather by the claims.

Claims

1. A method for manufacturing a light-emitting element, wherein include: The step of forming a hole transport region on the first electrode; The step of forming a light-emitting layer comprising quantum dots on the hole transport region; The step of forming an electron transport region on the light-emitting layer; as well as The step of forming a second electrode on the electron transport region, At least one of the steps of forming the light-emitting layer and forming the electron transport region includes multiple steps of forming sublayers. The steps of forming the sublayer include providing a preliminary sublayer and drying the preliminary sublayer.

2. The method for manufacturing a light-emitting element according to claim 1, wherein, The initial sublayer is provided via inkjet printing.

3. The method for manufacturing a light-emitting element according to claim 1, wherein, The multiple sublayers formed by repeating the steps of forming the sublayers multiple times are organic-inorganic composite layers.

4. The method for manufacturing a light-emitting element according to claim 1, wherein, The process of forming the sublayer is repeated two to five times.

5. The method for manufacturing a light-emitting element according to claim 1, wherein, The material of the initial sublayer provided in each of the multiple steps of forming the sublayer is the same.

6. The method for manufacturing a light-emitting element according to claim 1, wherein, The steps of forming the sublayers are repeated multiple times to form multiple sublayers of the same thickness.

7. The method for manufacturing a light-emitting element according to claim 1, wherein, The step of forming a barrier layer is included before at least one of the steps of forming the light-emitting layer, forming the electron transport region, and forming the second electrode.

8. A light emitting element, wherein, include: First electrode; A hole transport region is disposed on the first electrode; A light-emitting layer, disposed on the hole transport region, includes quantum dots; An electron transport region is disposed on the light-emitting layer; as well as The second electrode is disposed on the electron transport region. The light-emitting layer and at least one of the electron transport regions include multiple sub-layers divided in the thickness direction. The H concentration measured along the thickness direction of the plurality of sublayers has a minimum or maximum value at the interface between the plurality of sublayers.

9. The light-emitting element according to claim 8, wherein, The multiple sub-layers are organic-inorganic composite layers.

10. The light-emitting element according to claim 8, wherein, The thickness of each of the multiple sub-layers is the same.

11. The light-emitting element according to claim 8, wherein, The number of the multiple sub-layers is two or more and five or less.

12. The light-emitting element according to claim 8, wherein, Each of the multiple sub-layers includes pores. The length of the pore in the thickness direction of the sublayer is less than the thickness of each of the sublayers.

13. The light-emitting element according to claim 8, wherein, Each of the multiple sub-layers includes pores. The pores are not connected to the pores of the adjacent sublayers.

14. The light-emitting element according to claim 8, wherein, The light-emitting element also includes: A blocking layer is disposed directly on at least one of the surfaces above the light-emitting layer, below the light-emitting layer, above the electron transmission region, and below the electron transmission region.

15. The light-emitting element according to claim 8, wherein, Each of the multiple sublayers independently includes at least one of Al2O3, TiO2, SiO2, BaSO4, Ta2O5, PbCl2, PbBr2, PbI2, ITO, Ag, ZnO, SnCl2, SnBr2, SnI2, SnO, PVP, and PMMA.

16. An electronic device, wherein, Includes a display device, the display device comprising a display module for displaying images. The display module includes multiple light-emitting elements. Each of the light-emitting elements includes: First electrode; A hole transport region is disposed on the first electrode; A light-emitting layer, disposed on the hole transport region, includes quantum dots; An electron transport region is disposed on the light-emitting layer; and The second electrode is disposed on the electron transport region. The light-emitting layer and at least one of the electron transport regions include multiple sub-layers divided in the thickness direction. The H concentration measured along the thickness direction of the plurality of sublayers has a minimum or maximum value at the interface between the plurality of sublayers.

17. The electronic device according to claim 16, wherein, The multiple sub-layers are organic-inorganic composite layers.

18. The electronic device according to claim 16, wherein, The number of the multiple sub-layers is two or more and five or less.

19. The electronic device according to claim 16, wherein, The electronic device also includes: At least one of the processor, memory, and power module.

20. The electronic device according to claim 16, wherein, The electronic device is a television set, monitor, billboard, personal computer, laptop computer, personal digital terminal, vehicle device, game console, smartphone, tablet, smartwatch, or camera.

Images