A method, system, equipment, and medium for constructing a potassium iron tantalate niobate electrothermal switching device based on electric field control.

Abstract

This application discloses a method, system, equipment, and medium for constructing a potassium tantalate-niobate iron electrothermal switch device based on electric field control. It mainly relates to the field of ferroelectric thermal switch device technology, aiming to solve the problems of existing thin-film electrically tunable thermal switches having relatively fixed Curie temperatures, some far below room temperature, limiting their application environment; and low thermal switching ratios, making it difficult to meet the requirements of efficient thermal management. The method includes: obtaining the application Curie temperature of the potassium tantalate-niobate iron electrothermal switch device; determining the molar ratio of tantalum and niobium in potassium tantalate-niobate, sputtering parameters, preset electric field, and preset alternating electric field based on the application Curie temperature; inputting the sputtering parameters into a preset electrode preparation device; depositing ITO transparent conductive films on both sides of a potassium tantalate-niobate wafer with the corresponding molar ratio using the preset electrode preparation device; and leading wires from the ITO transparent conductive films on both sides to construct the initial potassium tantalate-niobate iron electrothermal switch device.

Description

Technical Field

[0001] This application relates to the field of electrothermal switching device technology, and in particular to a method, system, device and medium for constructing a potassium iron tantalate niobate electrothermal switching device based on electric field control. Background Technology

[0002] Existing thermal management schemes in computer systems generally rely on preset thresholds or open-loop control strategies, making it difficult to adjust the allocation of heat dissipation resources based on real-time dynamic feedback of thermal conductivity. Although some systems introduce temperature sensors and fan speed control mechanisms, their control logic does not establish a data closed loop with the intrinsic transport characteristics of heat exchange materials, making it impossible to achieve adaptive regulation based on the thermal response state of the materials. This results in response lag and energy efficiency redundancy issues in scenarios with sudden load changes or heterogeneous computing.

[0003] Currently, the performance evaluation of thermal switching devices lacks an automated judgment mechanism integrated with the manufacturing system. Key parameters such as thermal conductivity, on / off ratio, and electrical fatigue must be collected step-by-step using external instruments. This prevents the generation of structured evaluation data and the triggering of decision-making logic in real time during the construction process, resulting in low device selection efficiency and difficulty in ensuring consistency. This severely restricts the large-scale deployment and iterative optimization of intelligent thermal management hardware. Furthermore, the ferroelectric materials corresponding to potassium tantalate niobate ferroelectric thermal switching devices suffer from the following problems: their Curie temperatures are relatively fixed, some being far below room temperature, limiting their application environments; and their thermal on / off ratios are low, making it difficult to meet the requirements of efficient thermal management. Summary of the Invention

[0004] This application provides a method, system, equipment, and medium for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control, in order to solve the problems of the lack of an automated judgment mechanism for performance evaluation of current thermal switch devices that is integrated with the manufacturing system; the relatively fixed Curie temperature point of existing thin-film electrically tunable thermal switches, some of which are far below room temperature, limiting the application environment; and the low thermal switching ratio, which makes it difficult to meet the requirements of efficient thermal management.

[0005] In a first aspect, this application provides a method for constructing a potassium tantalate niobate electrothermal switch device based on electric field control. The method includes: a data processing unit acquiring the application Curie temperature of the potassium tantalate niobate electrothermal switch device, performing parameter matching calculations, and determining the tantalum-niobium molar ratio, sputtering parameters, preset DC electric field parameters, and preset alternating electric field parameters of potassium tantalate niobate. The data processing unit encapsulates the sputtering parameters into structured control commands and sends them to the preset electrode preparation device. The preset electrode preparation device is then controlled to deposit ITO transparent conductive films on both sides of the potassium tantalate niobate wafer with the corresponding tantalum-niobium molar ratio and complete wire bonding to obtain the initial potassium tantalate niobate iron electrothermal switch device. The data processing unit sends a constant temperature control command to the temperature control unit. Under the condition that the ambient temperature stabilizes at the application Curie temperature, it sequentially sends a DC electric field control command and an alternating electric field switching command to the electric field control unit. Simultaneously, it calls the thermal conductivity measurement module to collect the initial steady-state thermal conductivity data of the potassium tantalate niobate electrothermal switch device, and performs calculations on the instantaneous thermal conductivity values ​​within the preset measurement cycle to obtain the thermal switching ratio. After completing the preset number of measurement cycles, it triggers the PE hysteresis loop test process and performs calculations on the collected hysteresis loop data to obtain quantitative data on the degree of electrical fatigue. The data processing unit inputs the obtained thermal conductivity, thermal switching ratio, and electrical fatigue degree into the preset judgment module, performs automatic comparison calculation with the preset qualified threshold range, and generates the device construction qualified judgment result; when it is judged that the construction is not completed, the abnormal data packet containing the measured parameters and the qualified range is output to the preset construction terminal through the data transmission link.

[0006] In one implementation of this application, the data processing unit obtains the application Curie temperature of the potassium tantalate niobate electrothermal switch device, performs parameter matching calculations, and determines the tantalum-niobium molar ratio, sputtering parameters, preset DC electric field parameters, and preset alternating electric field parameters of the potassium tantalate niobate, specifically including: After obtaining the application Curie temperature, the data processing unit calls the local preset corresponding relationship database and calculates the tantalum-niobium molar ratio corresponding to the application Curie temperature through linear interpolation. Using the calculated tantalum-niobium molar ratio as the search criteria, a pre-defined corresponding database is searched to match the ITO thin film sputtering parameters suitable for the wafer composition; the sputtering parameters include structured parameter fields such as sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time; Continue searching the preset correspondence database to extract the preset DC electric field strength parameters corresponding to the tantalum-niobium molar ratio, as well as the preset alternating electric field frequency and amplitude parameters.

[0007] In one implementation of this application, the data processing unit encapsulates the sputtering parameters into structured control instructions and sends them to a preset electrode fabrication device. The preset electrode fabrication device then deposits an ITO transparent conductive film on both sides of a potassium tantalate niobate wafer with a corresponding tantalum-niobium molar ratio and completes wire bonding to obtain an initial potassium tantalate niobate iron electrothermal switch device, specifically including: The data processing unit sends the packaged sputtering parameter data packet to the embedded control unit of the preset electrode preparation device via the industrial Ethernet protocol; the sputtering parameter data packet contains resolvable sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time data fields; After the preset electrode preparation device completes the parameter package verification, it sends a ready signal back to the data processing unit and automatically executes the cavity vacuuming and wafer transfer heating process to reduce the background vacuum of the cavity to below the preset threshold and heat the potassium tantalate niobate wafer to the preset deposition temperature. After the data processing unit collects the ready status signals of all workstations, it sends a sputtering start command to the preset electrode preparation device to trigger the magnetron sputtering process and deposit an ITO transparent conductive film on both sides of the potassium tantalate niobate wafer. After deposition, the data processing unit sends a wire bonding control command to control the preset electrode preparation device to fix metal wires on the surface of the ITO thin film on both sides, thus constructing the initial potassium iron tantalate niobate electrothermal switch device.

[0008] In one implementation of this application, the data processing unit sends a constant temperature control command to the temperature control unit. Under the condition that the ambient temperature stabilizes at the application Curie temperature, it sequentially sends a DC electric field control command and an alternating electric field switching command to the electric field control unit. Simultaneously, it calls the thermal conductivity measurement module to collect the initial steady-state thermal conductivity data of the potassium tantalate-niobate electrothermal switching device, and performs calculations on the instantaneous thermal conductivity values ​​within a preset measurement period to obtain the thermal switching ratio, specifically including: The data processing unit sends a constant temperature control command to the temperature control unit, stabilizes the device ambient temperature to the application Curie temperature and completes the constant temperature maintenance, and then sends a DC electric field application command to the electric field control unit. The electric field control unit outputs a preset DC electric field to the ITO electrodes on both sides of the device according to the instruction. When the preset domain structure stability judgment condition is met, the data processing unit triggers the thermal conductivity measurement module to start the measurement, collects and stores the steady-state thermal conductivity value of the potassium tantalate niobate wafer under the electric field state. The data processing unit sends an electric field mode switching command to the electric field control unit, switches the output mode to a preset alternating electric field, and outputs a periodic alternating electric field according to the matched frequency and amplitude parameters; at the same time, it controls the thermal conductivity measurement module to continuously collect the instantaneous value of thermal conductivity at a fixed sampling interval within a preset measurement period, generates a time-series thermal conductivity dataset, and sends it back to the data processing unit. The data processing unit calls the built-in thermal switching ratio calculation module to extract the thermal conductivity extreme values ​​within the measurement period from the time-series thermal conductivity dataset. Using the steady-state thermal conductivity under a DC electric field as the benchmark value, the thermal switching ratio is calculated according to the preset calculation formula.

[0009] In one implementation of this application, the data processing unit inputs the obtained thermal conductivity, thermal on / off ratio, and electrical fatigue degree into a preset judgment module, performs automatic comparison calculations with a preset qualified threshold range, and generates a device construction qualified judgment result; when the construction is determined to be incomplete, an abnormal data packet containing the measured parameters and the qualified range is output to a preset construction terminal through a data transmission link, specifically including: After the data processing unit acquires the measured data sets of thermal conductivity, thermal switching ratio and electrical fatigue degree, it retrieves the qualified range of thermal conductivity, qualified threshold of thermal switching ratio and qualified threshold of electrical fatigue degree corresponding to the tantalum-niobium molar ratio from the process database; it performs range comparison operation and numerical comparison operation respectively to generate Boolean judgment results corresponding to the three items of thermal conductivity, thermal switching ratio and electrical fatigue degree. When all three judgment results are qualified, the device construction is deemed complete, a construction completion identifier is generated, the device component parameters, all measurement data and judgment results are written to the device status database for persistent storage, and the construction control process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal data encapsulation process is triggered, which encapsulates the unqualified item identifier, the measured value of each parameter, the corresponding qualified threshold range and the judgment timestamp into a structured abnormal instruction data packet. The data processing unit transmits the abnormal instruction data packet to the preset construction terminal via a wired or wireless communication network.

[0010] Secondly, this application provides a system for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control, the system comprising: Central server, and a preset electrode preparation device, an electric field control unit, and preset measuring devices connected to the central server; The central server is used to obtain the application Curie temperature of the potassium tantalate niobate electrothermal switching device, and to determine the ratio of tantalum to niobium in potassium tantalate niobate, sputtering parameters, preset electric field and preset alternating electric field based on the application Curie temperature; and to input the sputtering parameters into the preset electrode preparation device. A preset electrode preparation device is used to deposit ITO transparent conductive films on both sides of a potassium tantalate niobate wafer with a corresponding ratio, and to draw wires from the ITO transparent conductive films on both sides to construct an initial potassium tantalate niobate iron electrothermal switch device. An electric field control unit is used to apply a preset electric field to an initial potassium niobate electrothermal switching device at the applied Curie temperature using an electric field control unit connected to a wire. A preset measuring device is used to measure the thermal conductivity of potassium tantalate niobate wafers; a preset alternating electric field is applied, and the thermal switching ratio is measured within a preset measurement period. The central server is also used to determine whether the construction of the potassium tantalate niobate electrothermal switching device is complete based on whether the thermal conductivity and thermal switching ratio are within the preset qualified range corresponding to potassium tantalate niobate; when the construction is not completed, it outputs an abnormal command containing thermal conductivity and thermal switching ratio to the preset construction terminal.

[0011] In one implementation of this application, the central server includes a query engine module. After obtaining the application Curie temperature, it accesses a preset corresponding relationship database and determines the tantalum-niobium molar ratio corresponding to the application Curie temperature through interpolation calculation. Based on the tantalum-niobium molar ratio, a pre-defined corresponding database is consulted to obtain the ITO thin film sputtering parameters suitable for tantalum-niobium molar ratio-composition wafers; among which, the sputtering parameters include sputtering power, argon-oxygen flow ratio, working gas pressure, and deposition time; The preset electric field and preset alternating electric field applicable to the tantalum-niobium molar ratio composition wafers are obtained by querying the preset correspondence database.

[0012] In one implementation of this application, the central server includes a qualification determination module. After receiving the measurement result data set, it retrieves the preset thermal conductivity acceptable range, preset thermal switching ratio acceptable threshold, and electrical fatigue degree acceptable threshold corresponding to the tantalum-niobium molar ratio from the process database; it compares the measured thermal conductivity with the preset thermal conductivity acceptable range, compares the measured thermal switching ratio with the preset thermal switching ratio acceptable threshold, and compares the measured electrical fatigue degree with the preset electrical fatigue degree acceptable threshold, generating thermal conductivity judgment results, thermal switching ratio judgment results, and electrical fatigue degree judgment results respectively. When the thermal conductivity, thermal switching ratio, and electrical fatigue degree are all qualified, the device construction is considered complete, a construction completion identifier is generated, the device parameters, measurement data, and judgment results are written into the device status database, and the construction process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal instruction generation process is triggered. The name of the unqualified item, the measured thermal conductivity value, the measured thermal switching ratio, the measured electrical fatigue degree, the corresponding preset qualified range, and the judgment timestamp are encapsulated into a structured abnormal instruction data packet.

[0013] Thirdly, this application provides a device for constructing a potassium niobate electrothermal switch device based on electric field modulation, the device comprising: processor; And a memory storing executable code, which, when executed, causes the processor to execute a method for constructing a potassium iron tantalate niobate electrothermal switching device based on electric field control, as described above.

[0014] Fourthly, this application provides a non-volatile computer storage medium storing computer instructions, which, when executed, implement a method for constructing a potassium niobate electrothermal switch device based on electric field control as described above.

[0015] As can be seen from the above technical solutions, this application has the following advantages: By embedding modules for acquiring, calculating, and judging thermal conductivity, thermal on / off ratio, and electrical fatigue into the device manufacturing process, an end-to-end automated evaluation system has been established for the first time in the manufacturing stage of potassium ferrotantalate niobate electric heating switch devices. Traditional methods rely on external instruments for step-by-step measurements, resulting in severe data silos. In contrast, this solution, after temperature control stabilization, uses the electric field control unit to link the thermal conductivity measurement module and the PE loop test process, achieving continuous, synchronous, and structured acquisition of key parameters, which are then directly input into a preset judgment module for compliance comparison. This mechanism eliminates the delays caused by manual intervention and cross-device data integration, thus improving device screening efficiency.

[0016] By regulating potassium tantalum niobate (KTa) 1-x Nb x By adjusting the molar ratio of tantalum to niobium in PbTiO3 (O3KTN) and setting the Curie temperature, the ferroelectric phase transition point of the material is shifted to a range close to room temperature or other application temperatures, thereby reducing the driving electric field strength required to induce ferroelectric domain wall rearrangement. This design directly avoids the drawback of traditional PbTiO3 materials requiring a high-voltage electric field due to the excessively high Curie temperature (490℃), enabling the electric field control unit to achieve stable domain structure switching under low voltage conditions, simplifying the driving circuit architecture, and reducing system power consumption.

[0017] By adjusting the molar ratio of tantalum to niobium in potassium tantalate and combining it with interpolation calculations from a pre-defined database of corresponding relationships, the Curie temperature can be set, overcoming the limitation that the Curie temperature of traditional ferroelectric materials is fixed and generally below room temperature. This method allows for flexible design of the operating point of the device within the range of room temperature to high temperature, broadening the applicability of thermal switching devices under different ambient temperatures and meeting the core requirement of temperature adaptability in complex thermal management scenarios.

[0018] Based on the tantalum-niobium molar ratio, the system automatically matches the optimal sputtering and electric field parameters to construct a ferroelectric thermal switching device with a highly consistent ITO electrode structure. Under the action of a preset electric field and an alternating electric field, the thermal conductivity is reversibly switched by adjusting the ferroelectric domain wall density, and the thermal on / off ratio can stably reach the preset acceptable range. This mechanism avoids the stringent dependence of traditional phase change materials on the quenching rate and overcomes the inherent defects of low on / off ratios in mechanisms such as MIT and CDW, providing a stable and repeatable control method for efficient thermal management. Attached Figure Description

[0019] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1This is a flowchart illustrating a method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control, as provided in an embodiment of this application.

[0021] Figure 2 The thermal conductivity variation curves of KTN under different electric field intensities are provided for embodiments of this application.

[0022] Figure 3 The relationship between the KTN thermal switching ratio and the electric field strength is provided in the embodiments of this application.

[0023] Figure 4 The dynamic response curve of thermal conductivity as the electric field changes in real time is provided for the embodiments of this application.

[0024] Figure 5 10 provided for embodiments of this application 6 Polarization intensity change curve after one cycle.

[0025] Figure 6 This is a schematic diagram of the internal structure of a system for constructing a potassium niobate electrothermal switch device based on electric field control, provided in an embodiment of this application.

[0026] Figure 7 This is a schematic diagram of the internal structure of a device for constructing a potassium niobate electrothermal switch device based on electric field control, provided in an embodiment of this application. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] Those skilled in the art should understand that the embodiments described below are merely preferred embodiments of this disclosure and do not imply that this disclosure can only be implemented through these preferred embodiments. These preferred embodiments are merely used to explain the technical principles of this disclosure and are not intended to limit the scope of protection of this disclosure. Based on the preferred embodiments provided by this disclosure, all other embodiments obtained by those skilled in the art without creative effort should still fall within the scope of protection of this disclosure.

[0029] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0030] The technical solutions proposed in the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0031] The embodiment provides a method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control, such as Figure 1 As shown in the embodiments of this application, the method mainly includes the following steps: Step 110: The data processing unit obtains the application Curie temperature of the potassium tantalate niobate electrothermal switch device, performs parameter matching calculation, and determines the tantalum-niobium molar ratio, sputtering parameters, preset DC electric field parameters, and preset alternating electric field parameters of potassium tantalate niobate.

[0032] In some embodiments, this step may specifically be as follows: After obtaining the application Curie temperature, the data processing unit calls the local preset corresponding relationship database and calculates the tantalum-niobium molar ratio corresponding to the application Curie temperature through linear interpolation. Using the calculated tantalum-niobium molar ratio as the search criteria, a pre-defined corresponding database is searched to match the ITO thin film sputtering parameters suitable for the wafer composition; the sputtering parameters include structured parameter fields such as sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time; Continue searching the preset correspondence database to extract the preset DC electric field strength parameters corresponding to the tantalum-niobium molar ratio, as well as the preset alternating electric field frequency and amplitude parameters.

[0033] As a specific example, when applying a Curie temperature of 25°C, suitable for room temperature applications, KTa0.6Nb0.4O3 single crystals were grown using the Czochralski method (crystal growth: single crystals were grown using the Czochralski method, with high-purity K2CO3, Ta2O5, and Nb2O5 powders prepared according to stoichiometric ratios, synthesized into polycrystalline material through solid-state reaction, and then placed in a platinum crucible. Growth parameters: Czochralski speed 1.5 mm / h, rotation speed 15 rpm, temperature gradient 25°C / cm, yielding a high-quality single crystal rod with a diameter of 30 mm and a length of 50 mm); sputtering parameters: argon atmosphere, working pressure 1.0 Pa, sputtering power 80 W, deposition time 20 min, film thickness 100 nm. After deposition, annealing was performed at 350°C for 30 min to improve the electrode-crystal interface contact; preset electric field strength range 0-20 kV / cm; preset alternating electric field ±20 kV / cm alternating electric field.

[0034] It should be further explained that this application achieves intrinsic tunability of the Curie temperature through continuous control of the potassium tantalate / niobate composition: potassium tantalate / niobate is a continuous solid solution system, and its crystal structure undergoes systematic distortion with changes in the molar ratio (x) of tantalum to niobium, leading to continuous changes in the ferroelectric phase transition energy barrier, thereby determining the intrinsic Curie temperature of the material. When the niobium content increases (x decreases), the lattice constant increases, the soft mode frequency decreases, and the Curie temperature decreases accordingly; conversely, increasing the tantalum content (x increases) increases the lattice rigidity, causing the Curie temperature to rise. Therefore, by setting a specific tantalum-niobium molar ratio, the intrinsic phase transition temperature of the material can be directly locked, achieving continuous coverage of the Curie point from low to high temperature ranges, without relying on external thermal management or composite structures, providing a material-level physical basis for the stable operation of devices under different ambient temperatures.

[0035] As a specific example, a sample table in the pre-defined relational database is provided:

[0036] Step 120: The data processing unit encapsulates the sputtering parameters into structured control commands and sends them to the preset electrode preparation device. The preset electrode preparation device is controlled to deposit ITO transparent conductive films on both sides of the potassium tantalate niobate wafer with the corresponding tantalum-niobium molar ratio and complete wire bonding to obtain the initial potassium tantalate niobate iron electrothermal switch device.

[0037] It should be noted that the potassium tantalate niobate wafer is a rectangular wafer cut from a single crystal rod along the

[001] direction into 5 mm × 4 mm × 2 mm, and is polished on both sides. The final surface roughness Ra = 0.8 nm and parallelism < 5 μm.

[0038] In some embodiments, this step may include: The data processing unit sends the packaged sputtering parameter data packet to the embedded control unit of the preset electrode preparation device via the industrial Ethernet protocol; the sputtering parameter data packet contains resolvable sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time data fields; After the preset electrode preparation device completes the parameter package verification, it sends a ready signal back to the data processing unit and automatically executes the cavity vacuuming and wafer transfer heating process to reduce the background vacuum of the cavity to below the preset threshold and heat the potassium tantalate niobate wafer to the preset deposition temperature. The preset electrode fabrication apparatus triggers the sputtering process based on the ready status signal, depositing an ITO transparent conductive film on both sides of a potassium tantalate niobate wafer with a corresponding ratio (for example, the vacuum level is evacuated to <5×10⁻⁶). -4 High-purity argon gas (Ar, purity 99.999%) was introduced, and the working pressure was adjusted to 1.0 Pa. The RF power supply was turned on, and the sputtering power was set to 80 W. Pre-sputtering was performed for 5 min to clean the target surface, followed by formal deposition for 20 min. The film thickness was confirmed to be 100 nm by a profilometer. After deposition, the film was annealed in air at 350 °C for 30 min at a heating rate of 5 °C / min, and then allowed to cool naturally to room temperature. A potassium tantalate niobate wafer with ITO transparent conductive films deposited on both sides is transferred to the wire bonding station. The preset electrode fabrication device uses conductive silver paste or ultrasonic bonding process to fix metal wires on the surface of the ITO film on both sides to construct the initial potassium tantalate niobate iron electric heating switch device, and the device ready signal is sent back.

[0039] It should be further explained that the corresponding ITO sputtering parameters are automatically retrieved based on the tantalum-niobium molar ratio, so that the thin film deposition conditions (such as argon-oxygen flow rate ratio, working gas pressure, and deposition time) are directly related to the surface energy and lattice matching requirements of the potassium tantalate-niobate wafer, thus avoiding interfacial stress mismatch or lattice distortion caused by parameter generalization.

[0040] Step 130: The data processing unit sends a constant temperature control command to the temperature control unit. Under the condition that the ambient temperature is stable to the application Curie temperature, it sequentially sends a DC electric field control command and an alternating electric field switching command to the electric field control unit. Simultaneously, it calls the thermal conductivity measurement module to collect the steady-state thermal conductivity data of the initial potassium tantalate niobate electrothermal switch device, and performs calculations on the instantaneous thermal conductivity values ​​within the preset measurement cycle to obtain the thermal switching ratio. After completing the preset number of measurement cycles, it triggers the PE hysteresis test process and performs calculations on the collected hysteresis hysteresis data to obtain the quantitative data of electrical fatigue.

[0041] In some embodiments, this step may include: The data processing unit sends a constant temperature control command to the temperature control unit, stabilizes the device ambient temperature to the application Curie temperature and completes the constant temperature maintenance, and then sends a DC electric field application command to the electric field control unit. The electric field control unit outputs a preset DC electric field to the ITO electrodes on both sides of the device according to the instruction. When the preset domain structure stability judgment condition is met, the data processing unit triggers the thermal conductivity measurement module to start the measurement, collects and stores the steady-state thermal conductivity value of the potassium tantalate niobate wafer under the electric field state. A field switching command is sent to the electric field control unit to switch the output mode from DC electric field to a preset alternating electric field. A periodic alternating electric field is applied to the device according to preset frequency and amplitude parameters, driving the ferroelectric domains to reciprocate under the action of the alternating electric field. A preset measuring device continuously acquires the instantaneous value of the thermal conductivity of the potassium tantalate-niobate wafer at fixed sampling intervals within a preset measurement period, obtaining the thermal conductivity, and transmitting it back in real time to (e.g., ...). Figure 2 As shown, the zero-field thermal conductivity measurement was performed by placing the packaged device on a test bench at a temperature controlled at 300 K and measuring the thermal conductivity under zero electric field conditions. This was repeated five times and the average value was taken, yielding k_off = 7.12 ± 0.15 W·m. - ¹·K - ¹; Electric field controlled thermal conductivity measurement: A DC electric field is applied along the

[001] direction, with the electric field strength gradually increasing from 0 to 20 kV / cm in step size of 5 kV / cm. The thermal conductivity is measured after each electric field point has been stabilized for 5 min. After receiving the thermal conductivity, the thermal switching ratio calculation module is invoked to extract the minimum and maximum values ​​of thermal conductivity within a preset measurement period. Using the thermal conductivity benchmark value under a preset electric field as a reference, the thermal switching ratio is calculated according to a preset algorithm (e.g., ...). Figure 3 The relationship between the thermal switching ratio and the electric field strength is shown.

[0042] Specifically, an alternating electric field of ±20 kV / cm with a frequency of 1 Hz is applied, meaning the electric field direction is switched every 0.5 s, and the operation continues continuously. Every 10 5 The test is paused for one cycle (approximately 28 hours) to measure the current thermal on / off ratio (where the dynamic response curve of thermal conductivity as the electric field changes in real time is shown in Figure 1). Figure 4 (As shown), record the performance degradation. Complete 10. 6 After one cycle, a PE hysteresis test is performed to compare the saturation polarization values ​​before and after the cycle and assess the degree of electrical fatigue (wherein, 10... 6 The polarization intensity change curve after the second cycle is as follows: Figure 5 (As shown).

[0043] Step 140: The data processing unit inputs the obtained thermal conductivity, thermal switching ratio and electrical fatigue degree into the preset judgment module, performs automatic comparison calculation with the preset qualified threshold range, and generates the device construction qualified judgment result; when it is judged that the construction is not completed, the abnormal data packet containing the measured parameters and the qualified range is output to the preset construction terminal through the data transmission link.

[0044] In some embodiments, this step may include: After the data processing unit acquires the measured data sets of thermal conductivity, thermal switching ratio and electrical fatigue degree, it retrieves the qualified range of thermal conductivity, qualified threshold of thermal switching ratio and qualified threshold of electrical fatigue degree corresponding to the tantalum-niobium molar ratio from the process database; it performs range comparison operation and numerical comparison operation respectively to generate Boolean judgment results corresponding to the three items of thermal conductivity, thermal switching ratio and electrical fatigue degree. When all three judgment results are qualified, the device construction is deemed complete, a construction completion identifier is generated, the device component parameters, all measurement data and judgment results are written to the device status database for persistent storage, and the construction control process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal data encapsulation process is triggered, which encapsulates the unqualified item identifier, the measured value of each parameter, the corresponding qualified threshold range and the judgment timestamp into a structured abnormal instruction data packet. The data processing unit transmits the abnormal instruction data packet to the preset construction terminal via a wired or wireless communication network.

[0045] In addition, this application Figure 6 This application provides a system for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control. For example... Figure 6 As shown in the embodiments of this application, the system mainly includes: Central server 210, preset electrode preparation device 220, electric field control unit 230, and preset measuring device 240 connected to central server 210; The central server 210 is used to obtain the application Curie temperature of the potassium tantalate niobate electrothermal switching device, and to determine the ratio of tantalum to niobium in potassium tantalate niobate, sputtering parameters, preset electric field and preset alternating electric field based on the application Curie temperature; and to input the sputtering parameters into the preset electrode preparation device 220. Central server 210 includes a query engine module. After obtaining the application Curie temperature, it accesses a preset corresponding relationship database and determines the tantalum-niobium molar ratio corresponding to the application Curie temperature through interpolation calculation. Based on the tantalum-niobium molar ratio, a pre-defined corresponding database is consulted to obtain the ITO thin film sputtering parameters suitable for tantalum-niobium molar ratio-composition wafers; among which, the sputtering parameters include sputtering power, argon-oxygen flow ratio, working gas pressure, and deposition time; The preset electric field and preset alternating electric field applicable to the tantalum-niobium molar ratio composition wafers are obtained by querying the preset correspondence database.

[0046] Preset electrode preparation device 220 is used to deposit ITO transparent conductive films on both sides of a potassium tantalate niobate wafer with a corresponding ratio, and to draw wires from the ITO transparent conductive films on both sides to construct an initial potassium tantalate niobate iron electrothermal switch device. The electric field control unit 230 is used to apply a preset electric field to the initial potassium niobate electrothermal switch device at the applied Curie temperature using the electric field control unit 230 connected to the wire. A preset measuring device 240 is used to measure the thermal conductivity of potassium tantalate niobate wafers; a preset alternating electric field is applied, and the thermal switching ratio is measured within a preset measurement period. The central server 210 is also used to determine whether the construction of the potassium tantalate niobate electrothermal switching device is completed based on whether the thermal conductivity and thermal switching ratio are within the preset qualified range corresponding to potassium tantalate niobate; when the construction is not completed, it outputs an abnormal command containing thermal conductivity and thermal switching ratio to the preset construction terminal.

[0047] Central server 210 includes a pass / fail determination module. After receiving the measurement result data set, it retrieves the preset thermal conductivity acceptable range, preset thermal switching ratio acceptable threshold, and electrical fatigue degree acceptable threshold corresponding to the tantalum-niobium molar ratio from the process database; it compares the measured thermal conductivity with the preset thermal conductivity acceptable range, compares the measured thermal switching ratio with the preset thermal switching ratio acceptable threshold, and compares the measured electrical fatigue degree with the preset electrical fatigue degree acceptable threshold, generating thermal conductivity judgment results, thermal switching ratio judgment results, and electrical fatigue degree judgment results respectively. When the thermal conductivity, thermal switching ratio, and electrical fatigue degree are all qualified, the device construction is considered complete, a construction completion identifier is generated, the device parameters, measurement data, and judgment results are written into the device status database, and the construction process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal instruction generation process is triggered. The name of the unqualified item, the measured thermal conductivity value, the measured thermal switching ratio, the measured electrical fatigue degree, the corresponding preset qualified range, and the judgment timestamp are encapsulated into a structured abnormal instruction data packet.

[0048] The above are method embodiments of this application. Based on the same inventive concept, this application also provides a device for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control. Figure 7 As shown, the device includes: a processor; and a memory storing executable code, which, when executed, causes the processor to perform a method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control as described in the above embodiment.

[0049] Specifically, the server obtains the application Curie temperature of the potassium tantalate-niobate iron heating switch device through the data processing unit. Based on the application Curie temperature, it performs parameter matching calculations to determine the molar ratio of tantalum and niobium in potassium tantalate-niobate, sputtering parameters, preset electric field, and preset alternating electric field. The sputtering parameters are encapsulated as structured control commands and input into the preset electrode fabrication device. Using the preset electrode fabrication device, ITO transparent conductive films are deposited on both sides of the potassium tantalate-niobate wafer with the corresponding molar ratio. Wires are led out from the ITO transparent conductive films on both sides to construct the initial potassium tantalate-niobate iron heating switch device. Under the condition that the temperature control unit stabilizes the ambient temperature to the application Curie temperature, the preset electric field is applied to the initial potassium tantalate-niobate iron heating switch device through the electric field control unit, and the device is activated. The thermal conductivity measurement module collects steady-state thermal conductivity data from the potassium tantalate niobate wafer; it switches the output mode to apply a preset alternating electric field, continuously collects instantaneous thermal conductivity values ​​within a preset measurement cycle, and calculates the thermal switching ratio. After completing a preset number of preset measurement cycles, it automatically triggers the PE loop test process, collects and calculates quantitative data on electrical fatigue; it inputs the thermal conductivity, thermal switching ratio, and electrical fatigue level into a preset judgment module, and automatically compares them with the preset qualified range corresponding to the potassium tantalate niobate iron electric heating switch to determine whether the construction of the potassium tantalate niobate iron electric heating switch device is complete; when it is determined that the construction is incomplete, an abnormal instruction data packet containing thermal conductivity, thermal switching ratio, and electrical fatigue level is output to the preset construction terminal through the data transmission link.

[0050] In addition, this application embodiment also provides a non-volatile computer storage medium storing executable instructions, which, when executed, implement the above-described method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control.

[0051] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for constructing a potassium ferrotantalate niobate electrothermal switch device based on electric field control, characterized in that, The method includes: The data processing unit obtains the application Curie temperature of the potassium tantalate niobate electrothermal switch device, performs parameter matching calculations, and determines the tantalum-niobate molar ratio, sputtering parameters, preset DC electric field parameters, and preset alternating electric field parameters of potassium tantalate niobate. The data processing unit encapsulates the sputtering parameters into structured control commands and sends them to the preset electrode preparation device. The preset electrode preparation device is then controlled to deposit ITO transparent conductive films on both sides of the potassium tantalate niobate wafer with the corresponding tantalum-niobium molar ratio and complete wire bonding to obtain the initial potassium tantalate niobate iron electrothermal switch device. The data processing unit sends a constant temperature control command to the temperature control unit. Under the condition that the ambient temperature stabilizes at the application Curie temperature, it sequentially sends a DC electric field control command and an alternating electric field switching command to the electric field control unit. Simultaneously, it calls the thermal conductivity measurement module to collect the initial steady-state thermal conductivity data of the potassium tantalate niobate electrothermal switch device, and performs calculations on the instantaneous thermal conductivity values ​​within the preset measurement cycle to obtain the thermal switching ratio. After completing the preset number of measurement cycles, it triggers the PE hysteresis loop test process and performs calculations on the collected hysteresis loop data to obtain quantitative data on the degree of electrical fatigue. The data processing unit inputs the obtained thermal conductivity, thermal switching ratio, and electrical fatigue degree into the preset judgment module, performs automatic comparison calculation with the preset qualified threshold range, and generates the device construction qualified judgment result; when it is judged that the construction is not completed, the abnormal data packet containing the measured parameters and the qualified range is output to the preset construction terminal through the data transmission link.

2. The method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control according to claim 1, characterized in that, The data processing unit acquires the application Curie temperature of the potassium tantalate-niobate electrothermal switching device, performs parameter matching calculations, and determines the tantalum-niobate molar ratio, sputtering parameters, preset DC electric field parameters, and preset alternating electric field parameters of the potassium tantalate-niobate, specifically including: After obtaining the application Curie temperature, the data processing unit calls the local preset corresponding relationship database and calculates the tantalum-niobium molar ratio corresponding to the application Curie temperature through linear interpolation. Using the calculated tantalum-niobium molar ratio as the search criteria, a pre-defined corresponding database is searched to match the ITO thin film sputtering parameters suitable for the wafer composition; the sputtering parameters include structured parameter fields such as sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time; Continue searching the preset correspondence database to extract the preset DC electric field strength parameters corresponding to the tantalum-niobium molar ratio, as well as the preset alternating electric field frequency and amplitude parameters.

3. The method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control according to claim 1, characterized in that, The data processing unit encapsulates the sputtering parameters into structured control commands and sends them to the preset electrode fabrication device. This device then deposits an ITO transparent conductive film on both sides of a potassium tantalate niobate wafer with the corresponding tantalum-niobium molar ratio and completes wire bonding, resulting in an initial potassium tantalate niobate iron electrothermal switch device, specifically including: The data processing unit sends the packaged sputtering parameter data packet to the embedded control unit of the preset electrode preparation device via the industrial Ethernet protocol; the sputtering parameter data packet contains resolvable sputtering power, argon-oxygen flow ratio, working gas pressure and deposition time data fields; After the preset electrode preparation device completes the parameter package verification, it sends a ready signal back to the data processing unit and automatically executes the cavity vacuuming and wafer transfer heating process to reduce the background vacuum of the cavity to below the preset threshold and heat the potassium tantalate niobate wafer to the preset deposition temperature. After the data processing unit collects the ready status signals of all workstations, it sends a sputtering start command to the preset electrode preparation device to trigger the magnetron sputtering process and deposit an ITO transparent conductive film on both sides of the potassium tantalate niobate wafer. After deposition, the data processing unit sends a wire bonding control command to control the preset electrode preparation device to fix metal wires on the surface of the ITO thin film on both sides, thus constructing the initial potassium iron tantalate niobate electrothermal switch device.

4. The method for constructing a potassium iron tantalate niobate electrothermal switch device based on electric field control according to claim 1, characterized in that, The data processing unit sends a constant temperature control command to the temperature control unit. Once the ambient temperature stabilizes at the application Curie temperature, it sequentially sends a DC electric field control command and an alternating electric field switching command to the electric field control unit. Simultaneously, it calls the thermal conductivity measurement module to collect the initial steady-state thermal conductivity data of the potassium tantalate-niobate electrothermal switching device, and performs calculations on the instantaneous thermal conductivity values ​​within a preset measurement period to obtain the thermal switching ratio, specifically including: The data processing unit sends a constant temperature control command to the temperature control unit, stabilizes the device ambient temperature to the application Curie temperature and completes the constant temperature maintenance, and then sends a DC electric field application command to the electric field control unit. The electric field control unit outputs a preset DC electric field to the ITO electrodes on both sides of the device according to the instruction. When the preset domain structure stability judgment condition is met, the data processing unit triggers the thermal conductivity measurement module to start the measurement, collects and stores the steady-state thermal conductivity value of the potassium tantalate niobate wafer under the electric field state. The data processing unit sends an electric field mode switching command to the electric field control unit, switches the output mode to a preset alternating electric field, and outputs a periodic alternating electric field according to the matched frequency and amplitude parameters; at the same time, it controls the thermal conductivity measurement module to continuously collect the instantaneous value of thermal conductivity at a fixed sampling interval within a preset measurement period, generates a time-series thermal conductivity dataset, and sends it back to the data processing unit. The data processing unit calls the built-in thermal switching ratio calculation module to extract the thermal conductivity extreme values ​​within the measurement period from the time-series thermal conductivity dataset. Using the steady-state thermal conductivity under a DC electric field as the benchmark value, the thermal switching ratio is calculated according to the preset calculation formula.

5. The method for constructing a potassium niobate electrothermal switch device based on electric field control according to claim 1, characterized in that, The data processing unit inputs the obtained thermal conductivity, thermal switching ratio and electrical fatigue degree into the preset judgment module, performs automatic comparison calculation with the preset qualified threshold range, and generates the device construction qualified judgment result; When the build is determined to be incomplete, an abnormal data packet containing measured parameters and acceptable ranges will be output to the preset build terminal via the data transmission link. Specifically, this includes: After the data processing unit acquires the measured data sets of thermal conductivity, thermal switching ratio and electrical fatigue degree, it retrieves the qualified range of thermal conductivity, qualified threshold of thermal switching ratio and qualified threshold of electrical fatigue degree corresponding to the tantalum-niobium molar ratio from the process database; it performs range comparison operation and numerical comparison operation respectively to generate Boolean judgment results corresponding to the three items of thermal conductivity, thermal switching ratio and electrical fatigue degree. When all three judgment results are qualified, the device construction is deemed complete, a construction completion identifier is generated, the device component parameters, all measurement data and judgment results are written to the device status database for persistent storage, and the construction control process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal data encapsulation process is triggered, which encapsulates the unqualified item identifier, the measured value of each parameter, the corresponding qualified threshold range and the judgment timestamp into a structured abnormal instruction data packet. The data processing unit transmits the abnormal instruction data packet to the preset construction terminal via a wired or wireless communication network.

6. A system for constructing a potassium ferrotantalate niobate electrothermal switching device based on electric field control, characterized in that, The system includes: Central server, and a preset electrode preparation device, an electric field control unit, and preset measuring devices connected to the central server; The central server is used to obtain the application Curie temperature of the potassium tantalate niobate electrothermal switching device, and to determine the ratio of tantalum to niobium in potassium tantalate niobate, sputtering parameters, preset electric field and preset alternating electric field based on the application Curie temperature; and to input the sputtering parameters into the preset electrode preparation device. A preset electrode preparation device is used to deposit ITO transparent conductive films on both sides of a potassium tantalate niobate wafer with a corresponding ratio, and to draw wires from the ITO transparent conductive films on both sides to construct an initial potassium tantalate niobate iron electrothermal switch device. An electric field control unit is used to apply a preset electric field to an initial potassium niobate electrothermal switching device at the applied Curie temperature using an electric field control unit connected to a wire. A preset measuring device is used to measure the thermal conductivity of potassium tantalate niobate wafers; a preset alternating electric field is applied, and the thermal switching ratio is measured within a preset measurement period. The central server is also used to determine whether the construction of the potassium tantalate niobate electrothermal switching device is complete based on whether the thermal conductivity and thermal switching ratio are within the preset qualified range corresponding to potassium tantalate niobate; when the construction is not completed, it outputs an abnormal command containing thermal conductivity and thermal switching ratio to the preset construction terminal.

7. The system for constructing a potassium ferrotantalate niobate electrothermal switch device based on electric field control according to claim 6, characterized in that, The central server includes a query engine module. After obtaining the application Curie temperature, it accesses a preset corresponding relationship database and determines the tantalum-niobium molar ratio corresponding to the application Curie temperature through interpolation calculation. Based on the tantalum-niobium molar ratio, a pre-defined corresponding database is consulted to obtain the ITO thin film sputtering parameters suitable for tantalum-niobium molar ratio-composition wafers; among which, the sputtering parameters include sputtering power, argon-oxygen flow ratio, working gas pressure, and deposition time; The preset electric field and preset alternating electric field applicable to the tantalum-niobium molar ratio composition of the wafer are obtained by querying the preset correspondence database.

8. The system for constructing a potassium ferrotantalate niobate electrothermal switch device based on electric field control according to claim 6, characterized in that, The central server includes a pass / fail determination module. After receiving the measurement result data set, it is used to retrieve the preset thermal conductivity qualified range, preset thermal switching ratio qualified threshold and electrical fatigue degree qualified threshold corresponding to the tantalum-niobium molar ratio from the process database. The measured thermal conductivity is compared with the preset acceptable range of thermal conductivity, the measured thermal switching ratio is compared with the preset acceptable threshold of thermal switching ratio, and the measured electrical fatigue degree is compared with the preset acceptable threshold of electrical fatigue degree. The results of thermal conductivity judgment, thermal switching ratio judgment and electrical fatigue degree judgment are generated respectively. When the thermal conductivity, thermal switching ratio, and electrical fatigue degree are all qualified, the device construction is considered complete, a construction completion identifier is generated, the device parameters, measurement data, and judgment results are written into the device status database, and the construction process ends. When any judgment result is unqualified, the judgment device has not been completed and the abnormal instruction generation process is triggered. The name of the unqualified item, the measured thermal conductivity value, the measured thermal switching ratio, the measured electrical fatigue degree, the corresponding preset qualified range, and the judgment timestamp are encapsulated into a structured abnormal instruction data packet.

9. A device for constructing a potassium tantalate niobate electrothermal switch based on electric field control, characterized in that, The device includes: processor; And a memory storing executable code, which, when executed, causes the processor to perform a method for constructing a potassium iron tantalate niobate electrothermal switching device based on electric field control as described in any one of claims 1-5.

10. A non-volatile computer storage medium, characterized in that, It stores computer instructions, which, when executed, implement a method for constructing a potassium iron tantalate niobate electrothermal switching device based on electric field control as described in any one of claims 1-5.

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