A wafer heating device and a wafer heating method

Abstract

This invention relates to the field of wafer processing technology, specifically to a wafer heating device and a wafer heating method. The wafer heating device includes a frame with a support plate on the frame, and a furnace tube heating plate and a laser annealing plate on the support plate; a support connected to a drive structure mounted on the support plate, the drive structure being able to drive the support to move horizontally and vertically relative to the support plate; a rotating structure mounted on the support, with two sets of opposing electron adsorption devices connected to the rotating structure; and a drive assembly mounted on the support, the drive assembly including a connecting structure and a pulling structure. The connecting structure is connected to the electron adsorption devices, and the pulling structure is able to pull the lower connecting structure, so that the lower electron adsorption device can be misaligned with the upper electron adsorption device, thereby improving production quality.

Description

Technical Field

[0001] This invention relates to the field of wafer processing technology, specifically to a wafer heating device and a wafer heating method. Background Technology

[0002] In the field of wafer processing technology, it is often necessary to perform different heating processes on the front and back sides of the wafer. For example, the furnace tube is used to heat the wafer to diffuse nickel atoms and form low-resistivity silicides, and then laser annealing is used to suppress excessive silicide formation. In existing equipment, mechanical grippers or single-sided adsorption devices are usually used to grab the wafer and realize its transfer and flipping between heating stations.

[0003] However, this method has its shortcomings. During the 180° flip, the wafer is only fixed by adsorption on one side, which can easily cause the wafer to shake or even fall off due to the shift in the center of gravity or vibration, affecting the processing stability and yield. Furthermore, when the wafer is placed on the heating plate, the adsorption device or other actuators located below may interfere with the heating plate or the wafer, causing equipment damage or wafer breakage. To solve the above interference problem, some equipment introduces additional sensors and control systems to coordinate the action sequence of the upper and lower adsorption devices. However, this not only increases the hardware cost and debugging difficulty, but also reduces the operating efficiency of the equipment and affects the rapid processing of wafers. Summary of the Invention

[0004] The purpose of this invention is to provide a wafer heating device and a wafer heating method to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: A wafer heating device, comprising: A frame, on which a support plate is provided, and on which a furnace tube heating plate and a laser annealing plate are provided; The bracket is connected to a drive structure disposed on the support plate, the drive structure being able to drive the bracket to move horizontally and vertically relative to the support plate; A rotating structure is mounted on the support, and two sets of opposing electronic adsorption devices are connected to the rotating structure. A driving assembly is disposed on the bracket. The driving assembly includes a connecting structure and a pulling structure. The connecting structure is connected to the electronic adsorption device. The pulling structure can pull the connecting structure located below, so that the electronic adsorption device below can be misaligned with the electronic adsorption device above.

[0006] The wafer heating equipment described above: the driving structure includes a linear drive module disposed on the support plate, a lifting plate is connected to the actuating end of the linear drive module, and the lifting plate is connected to the bracket; The drive structure also includes a lifting kit for driving the lifting plate to perform lifting actions.

[0007] The wafer heating equipment as described above: the lifting kit includes multiple sets of guide rods disposed on the linear drive module, the guide rods being slidably connected to the lifting plate; The lifting kit also includes a first electric telescopic rod mounted on the linear drive module, the actuating end of the first electric telescopic rod being connected to the lifting plate.

[0008] As described above, the wafer heating device includes an annular groove on the support and an embedded disk rotatably disposed within the annular groove. Two sets of sliding grooves are symmetrically arranged on the embedded disk, and the connecting structure is disposed within the sliding grooves. The rotating structure also includes an action kit for driving the embedded disk to rotate within the annular groove.

[0009] The wafer heating device as described above: the actuation kit includes a first gear coaxially connected to the embedded disk and a second gear rotatably mounted on the support, the first gear meshing with the second gear, and the shaft of the second gear being connected to a drive device mounted on the support.

[0010] The wafer heating device as described above: the connection structure includes a slider that is slidably disposed in the slide groove and a side plate that is fixedly installed on the embedded disk. A telescopic rod is slidably disposed in the slider. One end of the telescopic rod is connected to the electronic adsorption device, and the other end is connected to a guide kit. The telescopic rod is provided with a convex shaft, which is slidably engaged with an inclined groove provided on the side plate; The guide kit is adapted to the traction structure; The connection structure also includes a cylindrical spring that connects the guide kit and the slider.

[0011] As described above, the wafer heating device includes a sliding connection portion disposed at one end of the telescopic rod away from the electron adsorption device and an extension rod slidably disposed on the sliding connection portion. One end of the extension rod is provided with a guide portion, which is slidably connected to a guide member disposed on the first gear.

[0012] As described above, the wafer heating equipment includes a second electric telescopic rod mounted on the support. A hook is connected to the actuating end of the second electric telescopic rod. A recess is provided at the upper end of the hook. The extension rod can pass through the recess and move from one side of the hook to the other side.

[0013] A method for heating a wafer, using the aforementioned wafer heating equipment, includes the following steps: Step 1: Place the wafer to be heated on the furnace tube heating plate and use the heat generated by the furnace tube heating plate to heat one side of the wafer, so that nickel atoms diffuse at high temperature and react with the silicon substrate to form a low-resistivity initial silicide. Step 2: After one side of the wafer is heated and cooled, the drive structure drives the support to move toward the wafer, and the electronic adsorption device above the wafer adsorbs the wafer, and then drives the wafer to move upward. Step 3: After the wafer rises to the predetermined height, the electron adsorption device below the wafer moves upward under the action of the driving component and comes into contact with the lower surface of the wafer. Step 4: The rotating structure drives the wafer to rotate 180°, and then the electron adsorption device located below the wafer separates from the wafer; Step 5: The drive structure drives the support downward again and places the wafer on the laser annealing disk. Then, the electron adsorption device located on the top of the wafer separates from the wafer. Subsequently, the laser annealing disk heats the other side of the wafer, inhibiting further diffusion of nickel and preventing over-siliconization.

[0014] Compared with the prior art, the beneficial effects of the present invention are: By setting up electronic adsorption devices on both sides of the wafer, the electronic adsorption device located below the wafer can actively move aside during placement, preventing interference between the electronic adsorption device and the wafer, furnace heating plate, and laser annealing plate. Furthermore, during the 180° rotation of the wafer, the electronic adsorption devices on both sides of the wafer remain in contact with the wafer, resulting in good stability during the 180° rotation and preventing the wafer from falling off during the deflection process. By using a pull structure, only the electron adsorption device located below the wafer moves relative to the wafer. This allows the pull structure to automatically engage with the corresponding connection structure when the wafer is rotated 180°, ensuring that only the electron adsorption device located below the wafer can move aside without the need for an additional control system. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a wafer heating device; Figure 2 This is a schematic diagram of the structure of a wafer heating equipment after the rack has been removed. Figure 3 This is a schematic diagram of the wafer heating equipment from another angle after the rack has been removed. Figure 4 for Figure 3 Enlarged view of the structure at point A in the middle; Figure 5 This is a schematic diagram of the support, rotating structure, and drive components in a wafer heating device. Figure 6 This is a schematic diagram of the support and rotating structure in a wafer heating device. Figure 7 This is a schematic diagram of the structure of the first gear, embedded disk, slide, slider and electronic adsorption device in a wafer heating equipment; Figure 8 This is a schematic diagram of the drive assembly in a wafer heating device. Figure 9 An exploded view of a portion of the drive assembly in a wafer heating device; Figure 10 This is a schematic diagram of the pulling structure in a wafer heating device.

[0016] In the diagram: 1. Frame; 2. Bearing plate; 3. Linear drive module; 4. Actuating rod; 5. Lifting plate; 6. First electric telescopic rod; 7. Bracket; 701. Annular groove; 8. First gear; 9. Embedded disc; 901. Slide groove; 10. Slider; 11. Telescopic rod; 12. Protruding shaft; 13. Sliding connection; 14. Cylindrical spring; 15. Electronic adsorption device; 16. Second gear; 17. Drive device; 18. Side plate; 1801. Inclined groove; 19. Extension rod; 1901. Guide part; 20. Guide component; 21. Second electric telescopic rod; 22. Hook part; 2201. Recess. Detailed Implementation

[0017] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0018] Please see Figures 1-10 As an embodiment of the present invention, the wafer heating device includes: a frame 1, a support 7, a rotating structure, and a drive assembly.

[0019] The frame 1 is provided with a support plate 2, and the support plate 2 is provided with a furnace tube heating plate and a laser annealing plate; The support 7 is connected to a drive structure mounted on the support plate 2. The drive structure can drive the support 7 to move horizontally and vertically relative to the support plate 2. The drive structure includes a linear drive module 3 mounted on the support plate 2. A lifting plate 5 is connected to the actuating end of the linear drive module 3. The lifting plate 5 is connected to the support 7. When the wafer is gripped by the electron adsorption device 15, the linear drive module 3 can drive the support 7 connected to it to move through the lifting plate 5, so that the wafer can be switched from above the furnace tube heating plate to above the laser annealing plate, thereby realizing the transfer of the wafer and ensuring that the two sides of the wafer can be subjected to different temperatures. That is, it ensures that the nickel atoms on one side of the wafer diffuse at high temperature and react with the silicon substrate to form a low-resistance initial silicide, and also prevents the nickel elements from further diffusing due to high temperature when heating the other side of the wafer, thus preventing over-silicide formation.

[0020] The drive structure also includes a lifting kit for driving the lifting plate 5 to perform lifting actions. The lifting kit includes multiple sets of actuating rods 4 disposed on the linear drive module 3. The actuating rods 4 are slidably connected to the lifting plate 5. The lifting kit also includes a first electric telescopic rod 6 mounted on the linear drive module 3, the actuating end of the first electric telescopic rod 6 being connected to the lifting plate 5.

[0021] In this embodiment, the first electric telescopic rod 6 can drive the lifting plate 5 to move along the length direction of the actuating rod 4, so that the wafer can be lifted after the electronic adsorption device 15 has finished gripping the wafer, so that the wafer will not interfere with the furnace tube heating plate or laser annealing plate during the process of the rotating structure driving the wafer to rotate 180°.

[0022] Furthermore, after the wafer is transferred from the furnace heating plate to the laser annealing plate, the electronic adsorption device 15 above the wafer will release the wafer. At this time, the laser annealing plate will perform annealing with the wafer. In order to prevent the high temperature from affecting the suction cup on the electronic adsorption device 15, after the wafer is placed on the laser annealing plate, the first electric telescopic rod 6 will drive the electronic adsorption device 15 to move upward to separate it from the wafer, so as to ensure that the suction cup will not be affected by the high temperature when the wafer is annealed by the laser annealing plate.

[0023] Please see Figures 4-6The rotating structure is mounted on the support 7, and two sets of opposing electronic adsorption devices 15 are connected to the rotating structure. The rotating structure includes an annular groove 701 mounted on the support 7 and an embedded disk 9 rotatably mounted in the annular groove 701. Two sets of sliding grooves 901 are symmetrically arranged on the embedded disk 9. The connecting structure is mounted in the sliding grooves 901. When the wafer is transferred to the laser annealing disk, the connecting structure can preferentially drive the electronic adsorption device 15 below the wafer to perform a movement away from the wafer, so that the electronic adsorption device 15 below the wafer can be misaligned with the wafer, ensuring that the electronic adsorption device 15 below the wafer will not obstruct the wafer when the wafer is placed on the laser annealing disk.

[0024] The rotating structure also includes an action kit for driving the embedded disk 9 to rotate within the annular groove 701. The action kit includes a first gear 8 coaxially connected to the embedded disk 9 and a second gear 16 rotatably mounted on the bracket 7. The first gear 8 meshes with the second gear 16, and the shaft of the second gear 16 is connected to a drive device 17 mounted on the bracket 7.

[0025] After the wafer is heated and cooled by the furnace heating plate, the electronic adsorption device 15 located above the wafer will grasp the wafer. Then, the support 7 will drive the grasped wafer to move upward. After the wafer rises to a predetermined height, the drive device 17 will rotate and drive the second gear 16 connected to it to rotate. The second gear 16 is in a meshing state with the first gear 8, so that the first gear 8 will also rotate during the rotation of the second gear 16, thereby enabling the wafer to rotate 180°. When the wafer is transferred to the laser annealing plate, the laser annealing plate can perform annealing on the other side of the wafer to ensure the processing quality of the wafer.

[0026] Please see Figure 6 , 8 9. The driving component is disposed on the support 7. The driving component includes a connecting structure and a pulling structure. The connecting structure is connected to the electronic adsorption device 15. The pulling structure can pull the connecting structure located below so that the electronic adsorption device 15 below can be misaligned with the electronic adsorption device 15 above, preventing the electronic adsorption device 15 located below the wafer from interfering with the wafer's position when the wafer is placed on the laser annealing tray.

[0027] It should be noted that the above-mentioned connection structure is provided in two sets, which are respectively connected to the two sets of electron adsorption devices 15 on the upper and lower parts of the wafer.

[0028] The connection structure includes a slider 10 slidably disposed in the slide groove 901 and a side plate 18 fixedly installed on the embedded disk 9. A telescopic rod 11 is slidably disposed in the slider 10. One end of the telescopic rod 11 is connected to the electronic adsorption device 15, and the other end is connected to a guide kit. The telescopic rod 11 is provided with a convex shaft 12, which is slidably engaged with the inclined groove 1801 provided on the side plate 18. Specifically, the sliding direction of the slider 10 in the groove 901 is perpendicular to the sliding direction of the telescopic rod 11 in the slider 10. This allows the slider 10 to move relative to the groove 901 when the convex shaft 12 moves in the inclined groove 1801, and the telescopic rod 11 can also move relative to the slider 10. That is, the electron adsorption device 15 located below the wafer is in a state of tilting away from the wafer, and ultimately the electron adsorption device 15 can be misaligned with the wafer, ensuring that the electron adsorption device 15 below the wafer will not interfere with the wafer in position.

[0029] The guide kit is adapted to the traction structure. The guide kit includes a sliding connection part 13 disposed at one end of the telescopic rod 11 away from the electronic adsorption device 15 and an extension rod 19 slidably disposed on the sliding connection part 13. One end of the extension rod 19 is provided with a guide part 1901. The guide part 1901 is slidably connected to the guide member 20 disposed on the first gear 8. When the extension rod 19 moves, it can move along the length direction of the guide member 20. During this process, the sliding connection part 13 will move along the length direction of the inclined groove 1801, so that the sliding connection part 13 will slide relative to the extension rod 19. This ensures that when the extension rod 19 moves, it can drag the telescopic rod 11 to change the relative position of the electronic adsorption device 15.

[0030] The connection structure also includes a cylindrical spring 14 connecting the guide kit and the slider 10. The cylindrical spring 14 is in a stretched state in the initial state. At this time, under the tension provided by the cylindrical spring 14, the convex shaft 12 is located at one end of the inclined groove 1801 near the embedded disk 9. At this time, when the electronic adsorption device 15 acts on the wafer, the elastic force provided by the cylindrical spring 14 can ensure that there is sufficient elastic contact force between the electronic adsorption device 15 and the wafer, so as to avoid the wafer directly pushing the electronic adsorption device 15 upward when the two are in contact, and there is a gap between the two, which would cause the electronic adsorption device 15 to be unable to stably adsorb the wafer when it is in action.

[0031] In this embodiment, in the initial state, the corresponding extension rods 19 on the two sets of electronic adsorption devices 15 are respectively located at the upper and lower parts of the traction structure. The extension rod 19 located at the upper part will not generate relative force with the traction structure. Only the extension rod 19 located at the lower part abuts against the traction structure. When the traction structure pulls the extension rod 19 to move, it can drive the convex shaft 12 on the telescopic rod 11 connected to it to be at the end of the inclined groove 1801 away from the embedded disk 9. At this time, the electronic adsorption device 15 located at the lower part of the wafer is in a state of misalignment with the wafer, ensuring that the lower electronic adsorption device 15 will not interfere with the furnace tube heating plate and the laser annealing plate.

[0032] When one side of the wafer has been heated and cooled, the upper electronic adsorption device 15 will grab the wafer. At this time, the traction structure moves in the opposite direction, so that the lower electronic adsorption device 15 can be reset and pressed against the lower surface of the wafer. This means that during the process of the rotating structure driving the wafer to rotate, both sides of the wafer are fixed by the electronic adsorption device 15, thereby improving the stability of the wafer during the 180° flip process.

[0033] After the wafer completes a 180° flip, the positions of the two sets of electron adsorption devices 15 and the connecting structure will also change relative to the pulling structure. When the pulling structure moves, it can drive the connecting structure located below the wafer to move again, causing the electron adsorption device 15 located below the wafer to move aside. This ensures that the corresponding electron adsorption device 15 can move aside stably during the two heating processes of the wafer, preventing interference.

[0034] Please see Figure 9 , 10 The traction structure includes a second electric telescopic rod 21 mounted on the bracket 7. A hook portion 22 is connected to the actuating end of the second electric telescopic rod 21. A recessed portion 2201 is provided at the upper end of the hook portion 22. The extension rod 19 can pass through the recessed portion 2201 and move from one side of the hook portion 22 to the other side.

[0035] In this embodiment, the second electric telescopic rod 21 can drive the hook part 22 connected to it to move. Specifically, in the initial state, the extension rods 19 located above and below the wafer are both in a state of protruding from the sliding connection part 13, but the end of the upper extension rod 19 is just at the recess 2201 of the hook part 22, so that when the hook part 22 moves, only the lower extension rod 19 can move relative to the wafer.

[0036] Similarly, when the wafer rotates 180°, when the hook part 22 moves again, it will drive another set of extension rods 19 to move. However, this extension rod 19 was originally located on the upper part of the wafer but has been switched to the lower part of the wafer. That is, the hook part 22 always drives the extension rod 19 below the wafer to move, ensuring that the electronic adsorption device 15 located at the lower part of the wafer can stably separate from the wafer.

[0037] As an embodiment of the present invention, a wafer heating method is also proposed, which uses the wafer heating equipment and includes the following steps: Step 1: Place the wafer to be heated on the furnace tube heating plate and use the heat generated by the furnace tube heating plate to heat one side of the wafer, so that nickel atoms diffuse at high temperature and react with the silicon substrate to form a low-resistivity initial silicide. Step 2: After one side of the wafer is heated and cooled, the drive structure drives the support 7 to move toward the wafer, and uses the electronic adsorption device 15 above the wafer to adsorb the wafer, and then drives the wafer to move upward. Step 3: After the wafer rises to the predetermined height, the electron adsorption device 15 below the wafer moves upward under the action of the driving component and comes into contact with the lower surface of the wafer. Step 4: The rotating structure drives the wafer to rotate 180°, and then the electron adsorption device 15 located below the wafer separates from the wafer; Step 5: The drive structure drives the support 7 downward again and places the wafer on the laser annealing disk. Then, the electronic adsorption device 15 located on the upper part of the wafer separates from the wafer. Subsequently, the laser annealing disk heats the other side of the wafer, inhibiting further diffusion of nickel and preventing over-siliconization.

[0038] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0039] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A wafer heating device, characterized in that, include: A frame, on which a support plate is provided, and on which a furnace tube heating plate and a laser annealing plate are provided; The bracket is connected to a drive structure mounted on the support plate, the drive structure being able to drive the bracket to move horizontally and vertically relative to the support plate; A rotating structure is mounted on the support, and two sets of opposing electronic adsorption devices are connected to the rotating structure. A driving assembly is disposed on the bracket. The driving assembly includes a connecting structure and a pulling structure. The connecting structure is connected to the electronic adsorption device. The pulling structure can pull the connecting structure located below, so that the electronic adsorption device below can be misaligned with the electronic adsorption device above.

2. The wafer heating device according to claim 1, characterized in that, The drive structure includes a linear drive module disposed on the support plate, and a lifting plate is connected to the actuating end of the linear drive module. The lifting plate is connected to the bracket. The drive structure also includes a lifting kit for driving the lifting plate to perform lifting actions.

3. The wafer heating device according to claim 2, characterized in that, The lifting kit includes multiple sets of actuating rods disposed on the linear drive module, and the actuating rods are slidably connected to the lifting plate; The lifting kit also includes a first electric telescopic rod mounted on the linear drive module, the actuating end of the first electric telescopic rod being connected to the lifting plate.

4. The wafer heating device according to claim 1, characterized in that, The rotating structure includes an annular groove on the bracket and an embedded disk rotatably disposed in the annular groove. Two sets of sliding grooves are symmetrically arranged on the embedded disk, and the connecting structure is disposed in the sliding groove. The rotating structure also includes an action kit for driving the embedded disk to rotate within the annular groove.

5. The wafer heating apparatus of claim 4, wherein The actuation kit includes a first gear coaxially connected to the embedded disc and a second gear rotatably mounted on the bracket. The first gear meshes with the second gear, and the shaft of the second gear is connected to a drive device mounted on the bracket.

6. The wafer heating apparatus of claim 5, wherein The connection structure includes a slider that is slidably disposed in the groove and a side plate that is fixedly installed on the embedded disk. A telescopic rod is slidably disposed in the slider. One end of the telescopic rod is connected to the electronic adsorption device, and the other end is connected to a guide kit. The telescopic rod is provided with a convex shaft, which is slidably engaged with an inclined groove provided on the side plate; The guide kit is adapted to the traction structure; The connection structure also includes a cylindrical spring that connects the guide kit and the slider.

7. The wafer heating apparatus of claim 6, wherein The guide kit includes a sliding connection portion disposed at one end of the telescopic rod away from the electronic adsorption device and an extension rod slidably disposed on the sliding connection portion. One end of the extension rod is provided with a guide portion, which is slidably connected to a guide member disposed on the first gear.

8. A wafer heating device according to claim 7, characterized in that, The traction structure includes a second electric telescopic rod mounted on the bracket. A hook is connected to the actuating end of the second electric telescopic rod. A recess is provided at the upper end of the hook. The extension rod can pass through the recess and move from one side of the hook to the other side.

9. A method for heating a wafer, using the wafer heating apparatus as described in any one of claims 1-8, characterized in that, Includes the following steps: Step 1: Place the wafer to be heated on the furnace tube heating plate and use the heat generated by the furnace tube heating plate to heat one side of the wafer, so that nickel atoms diffuse at high temperature and react with the silicon substrate to form a low-resistivity initial silicide. Step 2: After one side of the wafer is heated and cooled, the drive structure drives the support to move toward the wafer, and the electronic adsorption device above the wafer adsorbs the wafer, and then drives the wafer to move upward. Step 3: After the wafer rises to the predetermined height, the electron adsorption device below the wafer moves upward under the action of the driving component and comes into contact with the lower surface of the wafer. Step 4: The rotating structure drives the wafer to rotate 180°, and then the electron adsorption device located below the wafer separates from the wafer; Step 5: The drive structure drives the support downward again and places the wafer on the laser annealing disk. Then, the electron adsorption device located on the top of the wafer separates from the wafer. Subsequently, the laser annealing disk heats the other side of the wafer, inhibiting further diffusion of nickel and preventing over-siliconization.

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