A rapid thermal annealing method and apparatus

Abstract

This invention relates to a rapid thermal annealing method and apparatus. The rapid thermal annealing method includes: providing a wafer to be processed; placing the wafer into a graphite box; and placing the graphite box into a rapid thermal treatment apparatus for a rapid thermal annealing process. The rapid thermal annealing process includes preheating, heat treatment, and cooling. No gas is introduced during the preheating and heat treatment processes, and the chamber pressure of the rapid thermal treatment apparatus is <50 mtorr. This invention increases the uniformity of wafer heating and reduces heating anomalies caused by airflow disturbances by placing the wafer in a graphite box for heat treatment. Furthermore, the emissivity of the graphite box coating increases from the center to the edge of the graphite box, compensating for uneven emissivity and achieving uniform wafer heating.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a rapid thermal annealing method and apparatus. Background Technology

[0002] Rapid thermal annealing is a type of single-wafer heat treatment process primarily using lamp heating. Its purpose is to minimize the process thermal budget by shortening the heat treatment time and temperature, or simply shortening the heat treatment time. To achieve a minimized thermal budget and ensure effective doping activation and lattice repair, rapid thermal annealing relies on high heating rates and short processing times. Its core principle is ensuring uniform temperature distribution within the wafer. Uneven heating can lead to localized overheating or underheating, causing problems such as uneven doping distribution, stress concentration, and thin film cracking, severely impacting device performance consistency. Furthermore, in conventional atmospheric processes, excessive oxygen content, large local temperature differences, and unstable airflow can result in significant differences in metal morphology before and after annealing.

[0003] Current conventional methods for improving heating uniformity include using zoned infrared halogen lamps with independent power adjustment modules to form a multi-zone independent temperature control system, dynamically adjusting the heating intensity of each zone, or monitoring the wafer surface temperature in real time and using PID algorithms to adjust the lamp output power for precise temperature control. While these methods can achieve precise wafer temperature control, they are costly and complex to maintain: multi-zone light sources and high-precision sensors increase system complexity and maintenance difficulty, limiting their adoption in small and medium-sized production lines.

[0004] Therefore, providing a rapid thermal annealing method and apparatus is of great significance. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a rapid thermal annealing method and apparatus, which can increase the uniformity of wafer heating and reduce the abnormal heating caused by airflow disturbance by placing the wafer in a graphite box for heat treatment.

[0006] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides a rapid thermal annealing method, comprising: A wafer to be processed is provided, which is then placed into a graphite box, and the graphite box is placed into a rapid thermal processing apparatus for a rapid thermal annealing process; wherein, The rapid thermal annealing process includes preheating, heat treatment, and cooling. No gas is introduced during the preheating and heat treatment processes, and the chamber pressure of the rapid heat treatment device is <50 mtorr.

[0007] In this invention, the wafer to be processed is placed in a graphite box, which is then placed in a rapid thermal processing apparatus for rapid thermal annealing. Therefore, the wafer's heating process does not directly depend on the thermal radiation from the heating lamps in the rapid thermal processing apparatus, avoiding uneven heating of the wafer caused by uneven spatial density distribution of the heating lamps. Furthermore, placing the wafer in the graphite box reduces abnormal heating caused by airflow disturbances. In addition, no gas is introduced during the preheating and heat treatment processes, and the chamber pressure of the rapid thermal processing apparatus is <50 mtorr. The chamber pressure can be 10 mtorr, 20 mtorr, 30 mtorr, or 40 mtorr. Maintaining a certain vacuum state during preheating and heat treatment prevents abnormal heating of the wafer due to airflow disturbances and avoids oxidation reactions between oxygen present in the chamber and the metal in the wafer.

[0008] Preferably, the preheating process includes preheating the graphite box to 180-220°C and maintaining it for 50-80 seconds. The preheating temperature can be 180°C, 190°C, 200°C, 210°C, or 220°C; the maintenance time can be 50 seconds, 60 seconds, 70 seconds, or 80 seconds. In this invention, the wafer to be processed is placed in the graphite box for preheating. The graphite box may crack during rapid heating. The preheating process in the rapid thermal annealing process can avoid cracking of the graphite box during heating, increasing the reliability of the process.

[0009] Preferably, the heat treatment process includes: heating to a specified temperature at a heating rate of 30-50℃ / s and maintaining it for 50-80s.

[0010] Preferably, the specified temperature is 700-800℃.

[0011] In this invention, the heating rate of the heat treatment can be 30℃ / s, 40℃ / s, or 50℃ / s. The specified temperature reached during heat treatment can be 700℃, 710℃, 720℃, 730℃, 740℃, 750℃, 760℃, 770℃, 780℃, 790℃, or 800℃. The holding time after heating can be 50s, 60s, 70s, or 80s. The settings of the heating rate, the specified temperature, and the holding time after heating in this invention can densify the thin film structure and reduce defects and interface states. During annealing, thermal energy activates the atoms inside the thin film, promotes short-range atomic diffusion, fills micropores, vacancies, and gaps generated by deposition, releases internal stress in the thin film, and achieves shrinkage and densification of the microstructure; at the same time, it drives the migration, recombination, and annihilation of lattice point defects such as vacancies and dislocations, promotes grain growth, purifies grain boundaries, and removes adsorbed water vapor and residual gas from the film layer, significantly reducing primary defects in the bulk. In addition, annealing can alleviate lattice mismatch and interfacial strain between the thin film and the substrate, reconstruct unsaturated dangling bonds at the interface, neutralize charge traps in combination with atmospheric passivation, reduce fixed charges and defect energy levels at the interface, effectively reduce the interface state density, improve the interface electrical properties, and enhance device performance and process yield.

[0012] Preferably, during the cooling process, heating is stopped, and Ar is introduced at a flow rate of 10-30 SLM to rapidly cool the graphite box. In this invention, the Ar flow rate can be 10 SLM, 20 SLM, or 30 SLM. The use of a large flow rate of Ar to purge the graphite box rapidly in this invention reduces the thermal budget.

[0013] Preferably, the surface of the graphite box is coated with a ceramic-based composite coating, the graphite box thickness uniformity is ≤±0.3mm, and the surface roughness Ra≤1.6μm.

[0014] Preferably, the emissivity of the ceramic-based composite coating increases from the center to the edge of the graphite box, ranging from 0.85 to 0.92.

[0015] Because the spatial layout density of the heating lamp array is sparse in the center and dense at the edges, the radiant power received per unit area of ​​the graphite box has an uneven power distribution with a center-edge gradient. This results in spatial non-uniformity of the temperature field on the surface of the graphite box, and the surface characteristics of the graphite box have spatial distribution differences, which leads to spatial differences in surface emissivity. Under the same temperature conditions, the radiative exitance of different regions of the graphite box is inconsistent, resulting in a spatial gradient in the heat flux density distribution received by different regions of the silicon wafer, and ultimately an imbalance in the heat flux density distribution transferred to the silicon wafer.

[0016] The requirements for the surface coating, thickness uniformity, and surface roughness of the graphite box in this invention enable the graphite box surface to establish a uniform microstructure, thereby controlling the uniformity of the spatial distribution of surface emissivity. To further compensate for the spatial differences in surface emissivity and ensure consistent radiation energy across all regions of the wafer, this invention limits the emissivity of the ceramic-based composite coating of the graphite box. The emissivity of the ceramic-based composite coating increases from the center to the edge of the graphite box, ranging from 0.85 to 0.92.

[0017] Preferably, the rapid thermal annealing method includes: (1) Provide a wafer to be processed, place the wafer to be processed into a graphite box, and place the graphite box into a rapid heat treatment device; (2) Evacuate the chamber of the rapid heat treatment device, and maintain the chamber pressure <50 mtorr for 20-40 s. (3) Preheat the graphite box to 180-220°C and maintain it for 50-80 seconds; (4) Heat to 700-800℃ at a heating rate of 30-50℃ / s and maintain for 50-80s; No gas is introduced in steps (3)-(4), and the chamber pressure is <50 mtorr; (5) Stop heating and introduce 10-30 SLM of Ar to cool down quickly.

[0018] Preferably, the wafer to be processed is a Ni-containing wafer. The rapid thermal annealing method in this invention avoids the oxidation reaction of metals in the wafer, local temperature differences in the wafer, and the effects of airflow disturbances during the rapid thermal annealing process. It is particularly suitable for the rapid thermal annealing of Ni-containing wafers and can solve the problem of large differences in Ni morphology before and after annealing.

[0019] On the other hand, the present invention provides a rapid thermal annealing apparatus, which is applicable to the rapid thermal annealing method described in the first aspect.

[0020] Traditional hot annealing processes, due to their stringent temperature control precision requirements, often necessitate the configuration of multi-dimensional temperature sensors, real-time feedback adjustment systems, and complex gas flow control modules. This not only increases equipment procurement costs but also presents numerous challenges for daily maintenance, such as sensor calibration and system debugging. The rapid hot annealing method of this invention boasts the core advantages of a simple process and easily achievable parameters, thus significantly simplifying the adaptable device structure. It eliminates the need for additional precision detection and control components, fundamentally reducing equipment maintenance costs.

[0021] Compared with the prior art, the present invention has the following beneficial effects: This invention increases the uniformity of wafer heating and reduces heating anomalies caused by airflow disturbance by placing the wafer in a graphite box for heat treatment, and the operation is simple. In this invention, the emissivity of the graphite box coating increases from the center to the edge of the graphite box, compensating for the uneven emissivity of the graphite box and achieving uniform heating of the wafer. The heat treatment process in this invention is simple and applicable to rapid thermal annealing devices with simple structure and low maintenance costs. Attached Figure Description

[0022] Figure 1 This is a surface morphology diagram of the wafer after rapid thermal annealing in Example 1.

[0023] Figure 2 This is a surface morphology image of the wafer after rapid thermal annealing in Comparative Example 1. Detailed Implementation

[0024] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0025] The scope of this invention can be defined by lower and upper limits. The selected lower and upper limits define the boundaries of a specific range. The range defined in this way can be defined by the inclusion or exclusion of endpoints. Any endpoint can be independently selected for inclusion or exclusion, and all lower and upper limits can be arbitrarily combined to form new ranges. That is, any lower limit can be combined with any upper limit to form an effective range. For example, if the ranges of 60~120 and 80~110 are listed for specific parameters, it should be understood that the ranges of 60~110 and 80~120 also fall within the scope of this invention. In addition, if the minimum range values ​​1 and 2 are listed, and the maximum range values ​​3, 4 and 5 are also listed, then all ranges of 1~3, 1~4, 1~5, 2~3, 2~4 and 2~5 fall within the scope of this invention. In this invention, the numerical range "a~b" represents a shortened representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0~5" means that all real numbers between 0 and 5 have been fully listed in this document, and "0~5" is only a shortened representation of this set of numerical combinations. When a parameter is expressed as an integer ≥2, it is equivalent to listing positive integers that meet the requirements, such as 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. When a parameter is expressed as an integer selected from "2~10", it is equivalent to listing any integer among 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0026] In this invention, "a combination of at least two" refers to a quantity greater than or equal to 2 unless otherwise specified. For example, "any one or a combination of at least two" means that any one of the listed items can be selected, or a combination of at least two of the listed items formed in a manner that does not conflict and enables the implementation of this invention. In this invention, unless otherwise specified, the features or solutions corresponding to "and / or" cover any one of two or more related listed items, as well as any and all combinations of the related listed items. The arbitrary and all combinations include any two related listed items, any more related listed items, or a combination of all related listed items. For example, "A and / or B" means a set consisting of A, B, and combinations of A and B, where "containing A and / or B" can be understood, depending on the context of the statement, as containing A, containing B, or simultaneously containing both A and B. In this invention, "optional" means that the corresponding feature, component, step or solution is not necessary, that is, it is selected from either "with" or "without". If there are multiple "optional" limitations in a technical solution, unless otherwise specified and there is no technical conflict or mutual constraint, each "optional" limitation is independent and does not affect the others.

[0027] In this invention, technical features or solutions described using open-ended terms such as "comprising" or "including" do not exclude additional non-conflicting elements beyond the listed elements unless otherwise specified. They are considered to disclose both closed-ended features or solutions consisting solely of the listed elements and open-ended features or solutions that may include additional non-conflicting elements beyond the listed elements. For example, if A includes a1, a2, and a3, unless otherwise specified, this means that A can consist only of a1, a2, and a3, or it can include other non-conflicting elements based on a1, a2, and a3. This corresponds to the disclosure of technical solutions such as "A consists of a1, a2, and a3," "A is selected from a1, a2, and a3," and "A not only includes a1, a2, and a3, but may also include other non-conflicting elements." All embodiments and optional embodiments of this invention, unless otherwise specified and without technical conflict, can be combined to form new technical solutions, and such combinations fall within the scope of this invention. The term "embodiment" as used in this invention means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of the invention. The appearance of this phrase in various locations throughout the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will understand, explicitly and implicitly, that the embodiments described in this invention can be combined with other embodiments that do not conflict with the technology. The ordinal numbers "first," "second," "third," and "fourth," etc., used in the expressions "first aspect," "second aspect," "third aspect," and "fourth aspect" in this invention are for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly specifying the importance or quantity of the indicated technical features. They serve only as a non-exhaustive enumeration and do not constitute a closed limitation on quantity.

[0028] In this invention, the order in which the steps are written in the methods described in each embodiment does not imply a strict execution order. The actual execution order of each step should be determined based on its function and possible internal logic. Unless otherwise specified, all steps of this invention can be executed in the order they are written, or in any order without technical conflict. For example, if the method includes steps (a) and (b), it means that the method may include steps (a) and (b) executed sequentially, or it may include steps (b) and (a) executed sequentially. If the method also includes step (c), then step (c) can be added to the method in any order without conflict, including but not limited to the execution order of steps (a), (b), and (c), steps (a), (c), and (b), steps (c), (a), and (b), etc.

[0029] In the rapid thermal annealing apparatus of this invention, the surface of the graphite box is coated with a ceramic-based composite coating. The thickness uniformity of the graphite box is ≤±0.3mm, and the surface roughness Ra≤1.6μm. The emissivity of the ceramic-based composite coating increases from the center to the edge of the graphite box, ranging from 0.85 to 0.92.

[0030] The rapid thermal annealing method of this invention uses the above-mentioned graphite box, including: (1) Provide the wafer to be processed, place the wafer to be processed into a graphite box, and place the graphite box into a rapid heat treatment device; (2) Evacuate the chamber of the rapid heat treatment device and maintain the chamber pressure <50 mtorr for 20-40 s; (3) Preheat the graphite box to 180-220℃ and maintain it for 50-80 seconds; (4) Heat to 700-800℃ at a heating rate of 30-50℃ / s and maintain for 50-80s; No gas is introduced in steps (3)-(4), and the chamber pressure is <50 mtorr; (5) Stop heating and introduce 10-30 SLM of Ar to cool down quickly.

[0031] Example 1 This embodiment provides a rapid thermal annealing method, including: (1) Provide a Ni-containing wafer to be processed, place the Ni-containing wafer to be processed into a graphite box, and place the graphite box into a rapid heat treatment device; (2) Evacuate the chamber of the rapid heat treatment device until the chamber pressure is 30 mtorr, and maintain it for 30 s; (3) Preheat the graphite box to 200°C and maintain it for 60 seconds; (4) Heat to 750℃ at a heating rate of 40℃ / s and maintain for 60s; No gas is introduced in steps (3)-(4), and the chamber pressure is <50 mtorr; (5) Stop heating and introduce 20SLM of Ar to cool down quickly.

[0032] Example 2 This embodiment provides a rapid thermal annealing method. Except for step (2), in which the chamber of the rapid heat treatment device is evacuated and the chamber pressure is 70 mtorr, and then maintained for 60 s, the rest is the same as in embodiment 1.

[0033] Example 3 This embodiment provides a rapid thermal annealing method. Except for step (3), in which the graphite box is preheated to 100°C and maintained for 10 seconds, the rest is the same as in embodiment 1.

[0034] Example 4 This embodiment provides a rapid thermal annealing method. Except for step (4), in which the temperature is raised to 800°C at a rate of 50°C / s and maintained for 80s, the rest is the same as in embodiment 1.

[0035] Example 5 This embodiment provides a rapid thermal annealing method. Except for step (4), in which the temperature is raised to 700°C at a rate of 30°C / s and maintained for 50s, the rest is the same as in embodiment 1.

[0036] Example 6 This embodiment provides a rapid thermal annealing method. Except for stopping heating in step (5) and introducing 30SLM of Ar to rapidly cool down, the rest is the same as in embodiment 1.

[0037] Comparative Example 1 The rapid thermal annealing method provided in this comparative example is the same as that in Example 1, except that the Ni-containing wafer to be processed is directly placed into the rapid thermal processing device in step (1) without a graphite box.

[0038] Comparative Example 2 The rapid thermal annealing method provided in this comparative example is the same as that in Example 1, except that the graphite box in step (1) is a common graphite box.

[0039] Comparative Example 3 The rapid thermal annealing method provided in this comparative example is the same as that in Example 1, except that the graphite box preheating treatment in step (3) is not performed.

[0040] Comparative Example 4 The rapid thermal annealing method provided in this comparative example is the same as that in Example 1, except that the vacuuming process in step (2) is not performed.

[0041] Comparative Example 5 The rapid thermal annealing method provided in this comparative example is the same as that in Example 1, except that the Ar introduction process in step (5) is not performed.

[0042] The Ni-containing wafers after rapid thermal annealing in all the above embodiments and comparative examples were tested using scanning electron microscopy (SEM). The results of rapid thermal annealing are shown in Table 1. The surface morphology of the wafer after rapid thermal annealing in Example 1 is as follows: Figure 1 As shown, the surface morphology of the wafer after rapid thermal annealing in Example 1 is as follows. Figure 2 As shown.

[0043] Table 1 Example 1 The appearance remained basically unchanged. 167.41 162.85 Example 2 The morphological changes are relatively small 139.74 168.14 Example 3 Small morphological changes 126.83 146.34 Example 4 Small morphological changes 142.81 128.56 Example 5 Small morphological changes 128.57 146.23 Example 6 The appearance remained basically unchanged. 154.95 151.38 Comparative Example 1 The appearance varies greatly 99.17 168.71 Comparative Example 2 Great variation in morphology 118.57 171.59 Comparative Example 3 The morphological changes are relatively small 172.56 148.12 Comparative Example 4 Great variation in morphology 125.17 178.43 Comparative Example 5 The morphological changes are relatively small 133.56 168.12

[0044] Before rapid thermal annealing, the film thickness on the wafer was generally uniform. However, after rapid thermal annealing, Ni reacted with the substrate to form nickel silicide. However, if the wafer is heated unevenly during the rapid thermal annealing process, the thickness of the Ni-Si layer formed on the wafer will be uneven, resulting in inconsistent thickness at different locations on the wafer after rapid thermal annealing. The average thickness on both sides of the wafer after rapid thermal annealing was measured, and the absolute difference in thickness between the two sides was used to characterize the morphological change of the wafer. An absolute difference below 10 indicates almost no change in wafer morphology; an absolute difference between 10 and 20 indicates a small change in wafer morphology; an absolute difference between 20 and 30 indicates a relatively small change in wafer morphology; an absolute difference between 30 and 40 indicates a relatively large change in wafer morphology; an absolute difference between 50 and 60 indicates a large change in wafer morphology; and an absolute difference above 60 indicates a very large change in wafer morphology.

[0045] As can be seen from the test results of Examples 1, 6 and Comparative Example 5 in Table 1, when rapid thermal annealing is followed by cooling and high-flow-rate Ar purging, the surface morphology of the wafer before and after heat treatment does not change much, and the alloy layer is uniform and flat. However, if rapid thermal annealing is followed by cooling and high-flow-rate Ar purging is not used, the surface morphology of the wafer before and after heat treatment changes significantly, and the uniformity and flatness of the alloy layer decreases. Therefore, rapid thermal annealing followed by cooling and high-flow-rate Ar purging not only cools the graphite box quickly, but also reduces Ni oxidation, resulting in a uniform and flat alloy layer.

[0046] The test results of Example 1, Comparative Example 1, and Comparative Example 2 show that placing the wafer in a common graphite box for rapid heat treatment can, to some extent, mitigate the uneven heating of the wafer caused by the uneven spatial density distribution of the heating lamp, thereby reducing the surface morphology changes before and after heat treatment and increasing the uniformity and flatness of the alloy layer. If the graphite box used for rapid heat treatment is the graphite box of this invention, the surface morphology changes before and after heat treatment are further reduced, and the uniformity and flatness of the alloy layer are further increased. This is because the graphite box of this invention can compensate for the spatial distribution differences in the emissivity of the graphite box surface, ensuring that the radiation energy received by each area of ​​the wafer is consistent, thus guaranteeing uniform heating of the wafer during rapid heat treatment.

[0047] As can be seen from the test results of Examples 1-2 and Comparative Example 4 in Table 1, the absence of gas introduction and the maintenance of a certain vacuum state in the chamber during preheating and heat treatment resulted in minimal changes in the surface morphology of the wafer before and after heat treatment, and increased uniformity and smoothness of the alloy layer. This is because a high vacuum environment can prevent airflow disturbances from causing abnormal heating of the wafer and avoid oxidation reactions between oxygen in the chamber and the metal in the wafer.

[0048] As can be seen from the test results of Examples 1, 4 and 5 in Table 1, the surface morphology changes are small within the range of the heating rate, the temperature to the specified temperature and the holding time after heating in the heat treatment of the present invention. The setting of the heating rate, the temperature to the specified temperature and the holding time after heating in the heat treatment of the present invention can densify the film structure and realize the shrinkage and densification of the microstructure.

[0049] As can be seen from the test results of Examples 1, 3 and Comparative Example 3 in Table 1, the preheating of the graphite box can not only avoid the graphite box from cracking during rapid heating and increase the reliability of the process, but also effectively reduce the interface state density, resulting in smaller changes in surface morphology.

[0050] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A rapid thermal annealing method, characterized by, The rapid thermal annealing method includes: A wafer to be processed is provided, which is then placed into a graphite box, and the graphite box is placed into a rapid thermal processing apparatus for a rapid thermal annealing process; wherein, The rapid thermal annealing process includes preheating, heat treatment, and cooling. No gas is introduced during the preheating and heat treatment processes, and the chamber pressure of the rapid heat treatment device is <50 mtorr.

2. The rapid thermal annealing method according to claim 1, wherein The preheating process includes preheating the graphite box to 180-220°C and maintaining it for 50-80 seconds.

3. The rapid thermal annealing method according to claim 1, wherein The heat treatment process includes: heating to a specified temperature at a heating rate of 30-50℃ / s and maintaining it for 50-80s.

4. The rapid thermal annealing method according to claim 1, wherein The specified temperature is 700-800℃.

5. The rapid thermal annealing method according to claim 1, wherein During the cooling process, heating is stopped, and Ar is introduced at a flow rate of 10-30 SLM to rapidly cool the temperature.

6. The rapid thermal annealing method according to claim 1, wherein The graphite box is coated with a ceramic-based composite coating. The graphite box has a thickness uniformity of ≤±0.3mm and a surface roughness Ra≤1.6μm.

7. The rapid thermal annealing method according to claim 5, wherein The emissivity of the ceramic-based composite coating increases from the center to the edge of the graphite box, ranging from 0.85 to 0.

92.

8. The rapid thermal annealing method according to claim 1, wherein The rapid thermal annealing method includes: (1) Provide a wafer to be processed, place the wafer to be processed into a graphite box, and place the graphite box into a rapid heat treatment device; (2) Evacuate the chamber of the rapid heat treatment device and maintain the chamber pressure <50 mtorr for 20-40 s; (3) Preheat the graphite box to 180-220°C and maintain it for 50-80 seconds; (4) Heat to 700-800℃ at a heating rate of 30-50℃ / s and maintain for 50-80s; No gas is introduced in steps (3)-(4), and the chamber pressure is <50 mtorr; (5) Stop heating and introduce 10-30 SLM of Ar to cool down quickly.

9. The rapid thermal annealing method according to Claim 1, wherein The wafer to be processed is a Ni-containing wafer.

10. A rapid thermal annealing apparatus, characterized by comprising: Applicable to the rapid thermal annealing method according to any one of claims 1-9.

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