A semiconductor package structure and a manufacturing method

Abstract

The present application belongs to the technical field of semiconductor packaging, and particularly relates to a semiconductor packaging structure and a manufacturing method. The present application provides a manufacturing method of a semiconductor packaging structure, comprising: preparing a substrate; wherein the substrate has a first surface and a second surface opposite along the thickness direction thereof, and the substrate is processed with a cavity penetrating through the first surface and the second surface; placing a component in the cavity of the substrate; covering the first surface with an encapsulation film and filling the cavity; pressing a build-up film on the encapsulation film and the second surface to form a first dielectric layer on the first surface, thereby obtaining an initial packaging structure; obtaining the position of the initial packaging structure by a laser scanning device, and generating a preset scanning path; moving a laser beam along the preset scanning path to ablate the surface of the first dielectric layer, thereby obtaining a first dielectric layer with a target thickness. The whole thinning process adopts non-contact processing, the laser scanning device is not in contact with the first dielectric layer, and the processing surface of the first dielectric layer is not subjected to mechanical stress.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor packaging technology, and in particular relates to a semiconductor packaging structure and manufacturing method. Background Technology

[0002] ABF, as an important insulating multilayer dielectric material, is widely used in the semiconductor packaging field due to its excellent insulation, flatness and high resolution.

[0003] Due to the different requirements of ABF dielectric layer thickness for different products or in order to improve heat dissipation performance, the ABF dielectric layer needs to be thinned during the fabrication of semiconductor packaging structures. Existing thinning processes usually use mechanical grinding of the ABF dielectric layer. Contact processing introduces mechanical stress, which can easily lead to separation or cracking of the ABF dielectric layer from the inner layer structure. Summary of the Invention

[0004] The technical problem to be solved by the present invention is: to address the problem that thinning of existing semiconductor packaging structures can easily lead to separation or cracking of the ABF dielectric layer and the inner structure, and to provide a semiconductor packaging structure and manufacturing method.

[0005] To address the aforementioned technical problems, in one aspect, embodiments of the present invention provide a method for manufacturing a semiconductor packaging structure, comprising the following steps: Fabricating a substrate; wherein the substrate has a first surface and a second surface opposite to each other along its thickness direction, and the substrate is processed with a cavity penetrating the first surface and the second surface; The components are placed inside the cavity of the substrate; The encapsulation film covers the first surface and fills the cavity; An extension film is laminated onto the encapsulation film and the second surface, and a first dielectric layer is formed on the first surface to obtain an initial encapsulation structure. The laser scanning device acquires the position of the initial packaging structure and generates a preset scanning path; The laser beam moves along the preset scanning path and ablates the surface of the first dielectric layer to obtain the first dielectric layer of the target thickness.

[0006] Optionally, the preparation of the substrate specifically includes: A substrate is obtained, the substrate having a first surface and a second surface opposite to each other along its thickness direction; Multiple alignment targets and through cavities are processed on the substrate; The laser scanning device acquires the position of the initial packaging structure, specifically including: A first coordinate system is established on the initial packaging structure, and the coordinate values ​​of the alignment target in the first coordinate system are obtained; Capture the coordinates of the alignment target in the second coordinate system of the laser scanning device; By comparing the coordinate values ​​of the alignment target in the first coordinate system and the coordinate values ​​in the second coordinate system, the deformation compensation value of the initial packaging structure is obtained, thereby determining the position of the initial packaging structure in the second coordinate system.

[0007] Optionally, the process of fabricating multiple alignment targets and through cavities on the substrate specifically includes: The alignment target and the outline of the cavity to be processed are etched on the first and second surfaces by an exposure-development-etching process. The laser beam cuts out the desired cavity along the outer contour of the cavity.

[0008] Optionally, the laser beam moves along the preset scanning path to ablate the surface of the first dielectric layer to obtain the first dielectric layer of the target thickness, specifically including: The laser beam moves along the preset scanning path and repeats multiple times to ablate the first dielectric layer layer by layer. With each ablation layer, the first dielectric layer is thinned by a set ablation thickness. Through the accumulation of multiple set ablation thicknesses, the first dielectric layer reaches the target thickness.

[0009] Optionally, the laser beam moves along the preset scanning path and repeats this process multiple times, specifically including: The thickness measurement laser head measures the thickness of the first dielectric layer that has just been ablated. The measured thickness data is compared with the target thickness of the first dielectric layer to obtain the thickness difference. The number of ablation layers of the first dielectric layer and the ablation thickness of the next ablation layer are adjusted according to the thickness difference.

[0010] Optionally, the thickness-measuring laser head measures the thickness of the first dielectric layer that has just been ablated, specifically including: The surface of the first dielectric layer facing away from the substrate is divided into multiple ablation regions. The laser beam moves along the preset scanning path to each ablation region. After one layer of ablation is completed, the thickness measuring laser head measures the thickness of the corresponding ablation region. The subsequent step involves comparing the measured thickness data with the target thickness of the first dielectric layer to obtain a thickness difference. Based on this thickness difference, the number of ablation layers in the first dielectric layer and the ablation thickness of the next ablation layer are adjusted. Specifically, this includes: The measured thickness data is compared with the target thickness of the first dielectric layer to obtain the thickness difference. The number of ablation layers in the ablation region and the ablation thickness when ablation the next layer are adjusted according to the thickness difference.

[0011] Optionally, the preset scanning path is a bidirectional scanning path, which means that after the laser beam drills a hole at one end of the ablation region along the first direction, it moves to the other end of the ablation region along the first direction to drill a hole. or, The preset scanning path is a spiral scanning path.

[0012] Optionally, the energy density of the laser beam is 100% to 110% of the ablation threshold of the first dielectric layer.

[0013] Optionally, the laser beam is an ultrashort pulse laser; and / or, the laser beam is a flat-top beam.

[0014] On the other hand, the present invention provides a semiconductor packaging structure, which is prepared by the above-described semiconductor packaging structure manufacturing method.

[0015] This invention discloses a method for manufacturing a semiconductor packaging structure. An encapsulation film on the first surface of a substrate embeds components within a cavity of the substrate. An uplayer film bonded to the encapsulation film forms a first dielectric layer together with the encapsulation film. Before thinning the first dielectric layer using laser, a laser scanning device acquires the actual position of the first dielectric layer, obtaining the outline of the first dielectric layer to be thinned, thereby generating a preset scanning path. This prevents the laser beam from deviating to the outside of the first dielectric layer, ensuring the accuracy of the processing position. Adjacent spots of the laser beam moving along the preset scanning path overlap to thin the first dielectric layer, obtaining a first dielectric layer of the target thickness.

[0016] The entire thinning process is non-contact. The laser scanning device does not contact the first dielectric layer, and the processing surface of the first dielectric layer is not subjected to mechanical stress. This effectively avoids the risks of stress, warping, and delamination caused by mechanical grinding, and prevents damage to internal components. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of step S11 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 2 This is a schematic diagram of step S12 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 3 This is a schematic diagram of step S21 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 4 This is a schematic diagram of step S22 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 5 This is a schematic diagram of step S3 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 6 This is a schematic diagram of step S4 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 7 This is a schematic diagram of step S6 in a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention.

[0018] The reference numerals in the accompanying drawings are as follows: 1. Substrate; 11. First surface; 12. Second surface; 13. Cavity; 2. Component; 3. Encapsulation film; 4. Addition film; 5. First dielectric layer; 6. Temporary carrier. Detailed Implementation

[0019] To make the technical problems solved, the technical solutions, and the beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0020] Due to the different requirements of ABF dielectric layer thickness for different products or in order to improve heat dissipation performance, the ABF dielectric layer needs to be thinned during the fabrication of semiconductor packaging structures. Existing thinning processes usually use mechanical grinding of the ABF dielectric layer. Contact processing introduces mechanical stress, which can easily lead to separation or cracking of the ABF dielectric layer from the inner layer structure, and may even damage the built-in components. Furthermore, uniformity is difficult to control.

[0021] To address the above problems, one embodiment of the present invention provides a method for manufacturing a semiconductor packaging structure.

[0022] like Figures 1 to 3 As shown, an embodiment of the present invention provides a method for manufacturing a semiconductor packaging structure, comprising the following steps: S1: As Figure 1 and Figure 2 As shown, a substrate 1 is prepared; wherein the substrate 1 has a first surface 11 and a second surface 12 opposite to each other along its thickness direction, and the substrate 1 is processed with a through cavity 13.

[0023] Specifically, the substrate 1 uses FR-4 or other high-frequency substrates, and is covered with 18~35um copper foil on both sides.

[0024] S2: As Figure 3 and Figure 4 As shown, component 2 is placed inside cavity 13 of substrate 1.

[0025] Preferably, the encapsulation film 3 is an ABF film.

[0026] It is understood that by embedding the component 2 in the cavity 13 of the substrate 1, the thickness of the semiconductor package structure can be reduced compared to mounting the component 2 on the substrate 1.

[0027] S3: As Figure 5 As shown, the encapsulation film 3 covers the first surface 11 and fills the cavity 13.

[0028] Specifically, after covering the first surface 11 with a certain thickness of encapsulation film 3, a vacuum lamination and baking process is used for filling and leveling. Because there is a difference between the height of component 2 and the depth of cavity 13, after the encapsulation film 3 melts and flows, some of the material from the encapsulation film 3 fills the cavity 13. This results in the thickness of the encapsulation material on the first surface 11 being less than the original thickness of the encapsulation film 3, failing to achieve the target thickness required for the first dielectric layer 5 of the subsequent semiconductor packaging structure. Therefore, in the subsequent S4 step, an additional layer of build-up film 4 needs to be laminated.

[0029] S4: As Figure 6 As shown, an extension film 4 is laminated onto the encapsulation film 3 and the second surface 12, and a first dielectric layer 5 is formed on the first surface 11 to obtain the initial encapsulation structure.

[0030] In this process, the encapsulation material on the first surface 11 and the build-up film 4 together form the first dielectric layer 5. At this time, the thickness of the first dielectric layer 5 in the initial encapsulation structure is greater than the target thickness of the first dielectric layer 5 in the required semiconductor encapsulation structure. Therefore, the first dielectric layer 5 needs to be thinned.

[0031] Preferably, the added layer 4 is an ABF film.

[0032] S5: The laser scanning device acquires the position of the initial packaging structure and generates a preset scanning path.

[0033] Specifically, the initial packaging structure is fixed to the laser processing platform by vacuum adsorption and two panel clamps to prevent the initial packaging structure from shaking and causing positional deviation.

[0034] S6: As Figure 7 As shown, the laser beam moves along a preset scanning path to ablate the surface of the first dielectric layer 5, so as to obtain the first dielectric layer 5 of the target thickness.

[0035] In steps S5 and S6, since the actual position of the initial packaging structure will deviate from the theoretical position due to the deformation in steps S1 to S4, the laser scanning device re-acquires the actual position of the first dielectric layer 5, obtaining the outline of the first dielectric layer 5 that needs to be thinned. The laser scanning device generates a preset scanning path based on the outline of the first dielectric layer 5, avoiding the laser beam from deviating to the outside of the first dielectric layer 5, thereby ensuring the accuracy of the processing position. Adjacent spots of the laser beam moving along the preset scanning path overlap to thin the first dielectric layer 5, obtaining the first dielectric layer 5 of the target thickness.

[0036] The entire thinning process is non-contact. The laser scanning device does not contact the first dielectric layer 5, and the processing surface of the first dielectric layer 5 is not subjected to mechanical stress, which can effectively avoid the risks of stress, warping and delamination caused by mechanical grinding.

[0037] Moreover, compared to mechanical grinding, where uniformity is difficult to guarantee due to fluctuations in tool condition and cutting force, laser processing in this application can achieve consistent material removal efficiency through precise energy control, thereby ensuring the flatness and uniformity of the processed surface.

[0038] In one embodiment, step S1 specifically includes: S11: As Figure 1 As shown, a substrate 1 is obtained, the substrate 1 having a first surface 11 and a second surface 12 opposite to each other along its thickness direction; S12: As Figure 2 As shown, multiple alignment targets and a through cavity 13 are fabricated on the substrate 1.

[0039] In step S5, the laser scanning device obtains the location of the initial packaging structure, specifically including: S51: Establish a first coordinate system on the initial packaging structure and obtain the coordinate values ​​of the alignment target in the first coordinate system; S52: Capture the coordinates of the target in the second coordinate system of the laser scanning device; S53: Compare the coordinate values ​​of the alignment target in the first coordinate system and the coordinate values ​​in the second coordinate system to obtain the deformation compensation value of the initial packaging structure, so as to determine the position of the initial packaging structure in the second coordinate system.

[0040] Specifically, before laser processing, the laser scanning device uses a high-resolution vision system and a specific wavelength illumination source to penetrate the first dielectric layer 5, capture the actual position of the comparison target in the second coordinate system in the initial packaging structure, and compare the coordinate position of the alignment target in the second coordinate system with the coordinate position in the first coordinate system to establish a precise relationship between the first and second coordinate systems. This compensates for the deformation error of the initial packaging structure, thereby adjusting the coordinate position of the first dielectric layer 5 of the initial packaging structure in the second coordinate system, offsetting the deformation effect, and improving the positioning accuracy of laser processing.

[0041] The alignment target provides an alignment reference for laser processing. The laser scanning device uses the alignment target as a reference to calculate the actual coordinates of the initial packaging structure, making the position of the initial packaging structure more accurate.

[0042] In other embodiments, the outline of the first dielectric layer 5 can be directly scanned using a vision system.

[0043] In one embodiment, step S12 specifically includes: S121: The alignment target and the outline of the cavity 13 to be processed are etched on the first surface 11 and the second surface 12 by an exposure-development-etching process.

[0044] S122: The laser beam cuts out the required cavity 13 along the outer contour of the cavity 13.

[0045] Compared to machining or chemical corrosion, laser beam cutting of cavity 13 is a non-contact process with no mechanical stress. It eliminates machining errors caused by tool wear, eliminates the need for frequent tool replacements, achieves higher machining accuracy, and avoids environmental concerns.

[0046] In one embodiment, step S2 specifically includes: S21: As Figure 3 As shown, a temporary carrier plate 6 that meets the adhesion requirements is attached to the second surface 12 to seal one side of the cavity 13. S22: As Figure 4 As shown, component 2 is inserted into cavity 13 from one side of the first surface 11 and attached to temporary carrier plate 6.

[0047] The subsequent S4 steps specifically include: like Figure 6 As shown, an extension film 4 is laminated onto the encapsulation film 3; Remove the temporary carrier plate 6 from the second surface 12 and press a layer of enhancement film 4 onto the second surface 12.

[0048] In one embodiment, step S6 specifically includes: S61: The laser beam moves along the preset scanning path and repeats multiple times to ablate the first dielectric layer 5 in layers. Each time a layer is ablated, the first dielectric layer 5 is thinned by a set ablation thickness. Through the accumulation of multiple set ablation thicknesses, the first dielectric layer 5 reaches the target thickness.

[0049] Compared to the total thickness required to ablate the first dielectric layer 5 in a single layer, this application employs layered ablation. By using a multi-pass, small-increment ablation method, the set ablation thickness of each layer is controlled to a manageable thickness. This reduces the energy of the laser beam, decreases the heat-affected zone, effectively controls the accumulation of thermal energy during single-layer ablation, avoids thermal damage or carbonization of the first dielectric layer 5, precisely controls the ablation depth, and protects the surrounding structure.

[0050] Moreover, layered ablation can achieve phased heat dissipation, with a short cooling time reserved after each layer is ablated, reducing heat accumulation.

[0051] In one embodiment, step S61, in which the laser beam moves along a preset scanning path and is repeated multiple times, specifically includes: S611: The thickness measurement laser head measures the thickness of the first dielectric layer 5 that has just been ablated. S612: Compare the measured thickness data with the target thickness of the first dielectric layer 5 to obtain the thickness difference, and adjust the number of ablation layers of the first dielectric layer 5 and the ablation thickness of the next ablation layer according to the thickness difference.

[0052] During layered ablation, the thickness is measured in real time after each layer is ablated. If there is a processing deviation in the ablation thickness of a certain layer, the laser beam parameters for the next layer can be adjusted or rework can be performed in time to avoid the risk of scrap in advance.

[0053] Specifically, a thickness measuring laser head is clamped behind or near the laser head of the laser scanning device that emits a laser beam to ablate the first dielectric layer 5, and a sensor is linked to it. When the thickness measuring laser beam emitted by the thickness measuring laser head comes into contact with the first dielectric layer 5, it is reflected. The sensor receives the reflected thickness measuring laser beam, so as to use the time difference between the emission and reception of the thickness measuring laser to realize distance measurement. The distance between the thickness measuring laser head and the first dielectric layer 5 is calculated based on the time difference between the emission and reception time, and then the thickness of the first dielectric layer 5 is obtained.

[0054] In one embodiment, step S611 specifically includes: The surface of the first dielectric layer 5 facing away from the substrate 1 is divided into multiple ablation regions. The laser beam moves along a preset scanning path to each ablation region. After one layer of ablation is completed, the thickness measuring laser head measures the thickness of the corresponding ablation region.

[0055] Step S612 specifically includes: The measured thickness data is compared with the target thickness of the first dielectric layer 5 to obtain the thickness difference. The number of ablation layers in the ablation region and the ablation thickness when ablation the next layer are adjusted according to the thickness difference.

[0056] Understandably, compared to the situation where heat cannot be dissipated in time during large-area continuous scanning ablation, which can easily lead to carbonization of the first dielectric layer 5, in this application, the single-layer thinning area of ​​the first dielectric layer 5 is divided into multiple ablation areas for partitioned ablation, so that each ablation area can be ablated in batches and at intervals. There is a time interval between the ablation of adjacent ablation areas, and the first dielectric layer 5 has enough time to dissipate heat and avoid heat accumulation.

[0057] Moreover, compared to the situation where excessive deflection angle of laser polarization during large-area scanning can lead to insufficient edge ablation due to spot distortion and energy attenuation in the edge region of the first dielectric layer 5, in this application, the scanning path of the small ablation area is shorter, the overlap rate of the laser spot is easier to control, and the energy density distribution within the same ablation area is more uniform, which is beneficial for processing a uniform and smooth thinned surface.

[0058] In one embodiment, the preset scanning path is a bidirectional scanning path, which means that after the laser beam drills a hole at one end of the ablation region along the first direction, it moves to the other end of the ablation region along the first direction to drill a hole.

[0059] The reason for adopting a bidirectional scanning path is that during the process of the laser moving from one end of the hole to the other end, the heat of the processed hole can be dissipated quickly, leaving enough heat dissipation space and time between the processing areas of adjacent holes, and avoiding the situation where the heat from the ablation of the previous hole has not been dissipated and the adjacent hole is processed, which would cause the local temperature to be too high and cause local warping of the substrate 1.

[0060] In other embodiments, the preset scanning path is a spiral scanning path.

[0061] In one embodiment, the energy density of the laser beam is 100% to 110% of the ablation threshold of the first dielectric layer 5.

[0062] If the energy density of the laser beam is lower than the ablation threshold of the first dielectric layer 5, the material in the first dielectric layer 5 cannot be effectively removed. If it is much higher than the ablation threshold of the first dielectric layer 5, excess heat will be generated, leading to thermal accumulation and carbonization of the first dielectric layer 5. Therefore, in this application, the energy density of the laser beam is set to 100% to 110% of the ablation threshold of the first dielectric layer 5, so that the energy density of the laser beam is slightly higher than the ablation threshold of the first dielectric layer 5. This can effectively ablate the material while suppressing thermal damage.

[0063] In one embodiment, the laser beam is an ultrashort pulse laser.

[0064] Ultrashort pulse lasers have extremely short pulse widths, enabling extremely high peak power densities. This allows the laser spot to be precisely focused on tiny areas, achieving point-to-point material removal and high-precision ablation. Furthermore, the surface of the first dielectric layer 5 processed by ultrashort pulse lasers has high cleanliness, with no burrs or carbon residue at the edges, allowing it to directly proceed to subsequent processes such as electroplating and photolithography, significantly simplifying the process and improving yield.

[0065] Picosecond and femtosecond lasers are preferred for ultrashort pulse lasers. Lasers in this wavelength range are easily and efficiently absorbed by the resin material of the first dielectric layer 5, and the heat-affected zone is small.

[0066] In one embodiment, the laser beam is a flat-top beam.

[0067] The flat-top beam utilizes beam shaping technology to convert a traditional Gaussian-distributed beam into a uniformly flat-topped beam. This flat-top beam exhibits uniform energy distribution within its focal plane, resulting in consistent depth of the bottom wall of the machined hole. This allows for the removal of material from the entire machining area of ​​the first dielectric layer 5 at the same rate, avoiding the "center machined, edge unmachined" situation encountered with Gaussian beam machining. Ultimately, this results in a smooth ablation surface. Furthermore, the uniform energy of the flat-top beam can cover a larger machining area, far exceeding the effective machining range of a Gaussian beam, leading to higher thinning efficiency for the first dielectric layer 5.

[0068] In addition, one embodiment of the present invention also provides a semiconductor packaging structure, such as Figure 7 As shown, it is prepared using the manufacturing method of the semiconductor packaging structure in any of the above embodiments.

[0069] This semiconductor packaging structure embeds the component 2 within the cavity 13 of the substrate 1, which reduces the thickness of the semiconductor packaging structure compared to mounting the component 2 onto the substrate 1. Furthermore, the first dielectric layer 5, with its target thickness, is thinned using a laser ablation process. During this thinning process, the laser scanning device does not contact the first dielectric layer 5, and the processed surface of the first dielectric layer 5 is not subjected to mechanical stress. This effectively avoids the risks of stress, warping, and delamination associated with mechanical polishing, and prevents damage to the embedded component 2.

[0070] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A method of manufacturing a semiconductor package structure, characterized by, Includes the following steps: Fabricating a substrate; wherein the substrate has a first surface and a second surface opposite to each other along its thickness direction, and the substrate is processed with a cavity penetrating the first surface and the second surface; The components are placed inside the cavity of the substrate; The encapsulation film covers the first surface and fills the cavity; An extension film is laminated onto the encapsulation film and the second surface, and a first dielectric layer is formed on the first surface to obtain an initial encapsulation structure. The laser scanning device acquires the position of the initial packaging structure and generates a preset scanning path; The laser beam moves along the preset scanning path and ablates the surface of the first dielectric layer to obtain the first dielectric layer of the target thickness.

2. The method of manufacturing a semiconductor package structure according to claim 1, wherein The preparation of the substrate specifically includes: A substrate is obtained, the substrate having a first surface and a second surface opposite to each other along its thickness direction; Multiple alignment targets and through cavities are processed on the substrate; The laser scanning device acquires the position of the initial packaging structure, specifically including: A first coordinate system is established on the initial packaging structure, and the coordinate values ​​of the alignment target in the first coordinate system are obtained; Capture the coordinates of the alignment target in the second coordinate system of the laser scanning device; By comparing the coordinate values ​​of the alignment target in the first coordinate system and the coordinate values ​​in the second coordinate system, the deformation compensation value of the initial packaging structure is obtained, thereby determining the position of the initial packaging structure in the second coordinate system.

3. The method of manufacturing a semiconductor package structure according to claim 2, wherein The process of fabricating multiple alignment targets and through cavities on the substrate specifically includes: The alignment target and the outline of the cavity to be processed are etched on the first and second surfaces by an exposure-development-etching process. The laser beam cuts out the desired cavity along the outer contour of the cavity.

4. The method of manufacturing a semiconductor package structure according to claim 1, wherein The laser beam moves along the preset scanning path to ablate the surface of the first dielectric layer to obtain the first dielectric layer of the target thickness, specifically including: The laser beam moves along the preset scanning path and repeats multiple times to ablate the first dielectric layer layer by layer. With each ablation, the first dielectric layer is thinned by a set ablation thickness. Through the accumulation of multiple set ablation thicknesses, the first dielectric layer reaches the target thickness.

5. The method of manufacturing a semiconductor package structure according to claim 4, wherein The laser beam moves along the preset scanning path and repeats this process multiple times, specifically including: The thickness measurement laser head measures the thickness of the first dielectric layer that has just been ablated. The measured thickness data is compared with the target thickness of the first dielectric layer to obtain the thickness difference. The number of ablation layers of the first dielectric layer and the ablation thickness of the next ablation layer are adjusted according to the thickness difference.

6. The method of manufacturing a semiconductor package structure according to claim 5, wherein The thickness-measuring laser head measures the thickness of the first dielectric layer that has just been ablated, specifically including: The surface of the first dielectric layer facing away from the substrate is divided into multiple ablation regions. The laser beam moves along the preset scanning path to each ablation region. After one layer of ablation is completed, the thickness measuring laser head measures the thickness of the corresponding ablation region. The subsequent step involves comparing the measured thickness data with the target thickness of the first dielectric layer to obtain a thickness difference. Based on this thickness difference, the number of ablation layers in the first dielectric layer and the ablation thickness of the next ablation layer are adjusted. Specifically, this includes: The measured thickness data is compared with the target thickness of the first dielectric layer to obtain the thickness difference. The number of ablation layers in the ablation region and the ablation thickness when ablation the next layer are adjusted according to the thickness difference.

7. The method of manufacturing a semiconductor package structure according to claim 6, wherein The preset scanning path is a bidirectional scanning path, which means that after the laser beam drills a hole at one end of the ablation region along the first direction, it moves to the other end of the ablation region along the first direction to drill a hole. or, The preset scanning path is a spiral scanning path.

8. The method of manufacturing a semiconductor package structure according to claim 1, wherein The energy density of the laser beam is 100% to 110% of the ablation threshold of the first dielectric layer.

9. The method of manufacturing a semiconductor package structure according to claim 1, wherein The laser beam is an ultrashort pulse laser; and / or, the laser beam is a flat-top beam.

10. A semiconductor package structure, comprising: It is prepared by the manufacturing method of the semiconductor packaging structure as described in any one of claims 1 to 9.

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