A cleaning method for removing black deposits from ceramic components of semiconductor etching equipment

Abstract

This invention discloses a cleaning method for removing black deposits from ceramic components of semiconductor etching equipment, belonging to the field of semiconductor equipment component cleaning technology. The process first uses an 800# oilstone to mechanically polish the surface of the ceramic component, removing loose, thick layers of black deposits. Then, the ceramic component is immersed in a 1:1 volume ratio electronic-grade sulfuric acid and hydrogen peroxide mixture cleaning solution at room temperature for 15-30 minutes. This process thoroughly removes residual dense black deposits through strong chemical oxidation. Finally, the component is rinsed with ultrapure water and dried to complete the cleaning. This invention employs a composite process combining mechanical pretreatment and chemical cleaning, overcoming the technical challenge of conventional cleaning methods failing to completely remove black deposits from ceramic components. The cleaning is thorough, without substrate damage, simple, and low-cost. It effectively restores the performance of ceramic components in etching equipment, extends component lifespan, reduces semiconductor equipment maintenance costs, and meets the cleanliness requirements of precision components in the semiconductor industry.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor equipment component cleaning technology, specifically relating to a cleaning method for removing black deposits from ceramic components of semiconductor etching equipment, applicable to the cleaning and refurbishment of ceramic structural components of semiconductor etching machines after use. Background Technology

[0002] Semiconductor etching is one of the core processes in chip manufacturing. Etching equipment uses a large number of ceramic components such as alumina and aluminum nitride. With the characteristics of high temperature resistance, corrosion resistance, good insulation and high mechanical strength of ceramic materials, it can meet the harsh working environment requirements of etching processes such as high temperature, plasma bombardment and chemical corrosion.

[0003] During long-term operation of etching equipment, mixed impurities such as polymers, carbides, and metal compounds generated during wafer etching will continuously deposit on the surface of ceramic components under plasma reaction conditions, forming a dense black deposit. This black deposit has strong adhesion, complex composition, and adheres tightly to the surface of the ceramic substrate.

[0004] Currently, the industry's conventional cleaning methods for semiconductor ceramic components mostly employ methods such as immersion in a single chemical solution, high-pressure rinsing with pure water, and wiping with a regular brush. However, conventional chemical cleaning solutions cannot decompose the high-molecular-weight carbonaceous components in the black deposits, resulting in limited cleaning effectiveness. Pure water rinsing and brush wiping can only remove surface dust and loose impurities, failing to peel off the dense, solidified black deposit layer. Long-term residual black deposits can lead to decreased insulation performance and excessive surface flatness in ceramic components, thereby affecting the process stability of etching equipment, causing uneven wafer etching, reduced yield, and other problems. Furthermore, excessively thick deposit buildup can directly lead to the scrapping of ceramic components, significantly increasing the maintenance costs of semiconductor equipment.

[0005] In summary, existing cleaning processes suffer from technical defects such as incomplete removal of black deposits, poor cleaning effect, and inability to meet the standards for reuse of ceramic parts. There is an urgent need to develop a specialized cleaning process that is highly targeted, thoroughly cleans, and does not damage the ceramic substrate. Summary of the Invention

[0006] The purpose of this invention is to solve the problems in existing semiconductor etching equipment ceramic component cleaning technology, such as the difficulty in completely removing dense black deposits, poor cleaning effect, and easy impact on equipment performance. This invention provides a cleaning method for removing black deposits from ceramic components of semiconductor etching equipment, achieving complete removal of black deposits from the surface of ceramic components while ensuring no damage to the ceramic substrate, and meeting the process requirements for repeated use of components.

[0007] The technical solution of this invention is: a cleaning method for removing black deposits from ceramic components of semiconductor etching equipment, the specific steps of which are as follows:

[0008] Step S1: Mechanical grinding pretreatment;

[0009] Step S2: Chemical soaking and thorough washing;

[0010] Prepare a cleaning solution of sulfuric acid and hydrogen peroxide in a volume ratio of 1:1. Immerse the ceramic parts that have undergone mechanical grinding pretreatment in step S1 completely in the cleaning solution and soak for 15-30 minutes. Utilize the synergistic effect of strong acid and strong oxidation of hydrogen peroxide to thoroughly decompose and peel off the dense black deposits remaining on the ceramic surface.

[0011] Step S3: Cleaning treatment;

[0012] After the chemical soaking and cleaning in step S2 is completed, the ceramic parts are removed and their surfaces are thoroughly rinsed with ultrapure water to remove residual cleaning solution and deposits. Then, they are dried to complete the cleaning process of the ceramic parts.

[0013] Furthermore, in step S1, the mechanical polishing pretreatment is as follows: Select an 800# oilstone and use manual grinding to uniformly polish the surface of the ceramic component to be cleaned in the semiconductor etching equipment, focusing on polishing the area covered with black deposits. Remove the loose, thick black deposits attached to the ceramic surface by mechanical polishing, while retaining the densely adhered residual deposit layer on the substrate surface.

[0014] Furthermore, in step S1, the 800# oilstone is a conventional silicon carbide oilstone. During the polishing process, it polishes at a uniform speed along the surface texture of the ceramic part, polishing all deposited areas without dead angles, and removing more than 80% of the thick black deposits after polishing.

[0015] Furthermore, in step S2, the sulfuric acid used is electronic-grade concentrated sulfuric acid, and the hydrogen peroxide is electronic-grade hydrogen peroxide solution. This conforms to the clean production standards of the semiconductor industry, preventing contamination of ceramic components by impurities in the chemical solutions.

[0016] Furthermore, in step S2, the cleaning solution is kept still during the soaking process without stirring. This avoids damage to the ceramic parts caused by liquid impact.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] 1. Thorough Cleaning Effect: This invention adopts a composite cleaning process of "mechanical grinding + chemical oxidation soaking". First, the thick, loose black deposits on the surface are removed by grinding with an 800# oilstone, which solves the problem that single chemical cleaning cannot remove thick deposits. Then, the strong oxidative decomposition effect of a 1:1 sulfuric acid and hydrogen peroxide mixture is used to completely peel off the dense residual deposit layer on the surface of the substrate. This can achieve 100% removal of black deposits on the surface of ceramic parts, and the cleaning effect is far superior to conventional single cleaning processes.

[0019] 2. No damage to the substrate and strong applicability: The 800# oilstone has a moderate grit size and the grinding force can be controlled. It will not scratch or wear the ceramic substrate and can completely preserve the surface flatness and structural performance of the ceramic parts. When used with electronic grade chemical solution immersion, there are no problems with substrate corrosion or oxidation damage. The various performance parameters of the cleaned ceramic parts meet the equipment reuse standards.

[0020] 3. Simple process and low cost: The overall process steps are simple and easy to operate. No special large-scale precision cleaning equipment is required. The operation can be completed at room temperature and pressure. The cost of cleaning consumables is low. It is suitable for cleaning and refurbishing ceramic parts of various specifications of etching equipment, which can effectively reduce the maintenance and component replacement costs of semiconductor equipment.

[0021] 4. Adaptable to semiconductor cleanliness requirements: Electronic-grade cleaning solutions are used, leaving no impurities after the cleaning process. The surface cleanliness of the components after cleaning is high, which will not contaminate the subsequent etching process, ensuring the stability of the machine operation and the yield of wafer production. Attached Figure Description

[0022] Figure 1: Schematic diagram of the state of ceramic components in semiconductor etching equipment before cleaning;

[0023] Figure 2: Schematic diagram of the state of ceramic components after cleaning in semiconductor etching equipment. Detailed Implementation

[0024] The present invention will be further described in detail below with reference to specific embodiments.

[0025] Example 1

[0026] This embodiment provides a cleaning process for removing black deposits from ceramic components of semiconductor etching equipment, including the following steps:

[0027] 1. Mechanical grinding pretreatment: Select 800# silicon carbide oilstone to uniformly grind the ceramic parts with black deposits on the surface after the etching equipment has been used. Focus on grinding the areas with thick deposits on the surface of the parts. Grind gently and evenly to remove most of the loose black deposit layer on the surface. After grinding, blow away the grinding debris.

[0028] 2. Preparation of chemical cleaning solution: Measure electronic grade concentrated sulfuric acid and electronic grade hydrogen peroxide separately according to a volume ratio of 1:1, and slowly mix and stir evenly to prepare a mixed cleaning solution.

[0029] 3. Immersion treatment: Immerse the polished ceramic parts completely in the mixed cleaning solution and let them stand at room temperature for 20 minutes.

[0030] 4. Post-treatment: After soaking, remove the ceramic parts and rinse the surface of the parts continuously with ultrapure water for 3-5 minutes to thoroughly remove residual chemicals and sediment. Place the rinsed ceramic parts in a drying device and dry them at low temperature to complete the cleaning.

[0031] Testing revealed that the ceramic components cleaned in this embodiment had no black deposits remaining on their surface, were smooth without scratches or corrosion damage, and their insulation performance and structural strength met the equipment usage standards, allowing them to be directly reused.

[0032] Example 2

[0033] This embodiment provides a cleaning process for removing black deposits from ceramic components of semiconductor etching equipment, including the following steps:

[0034] 1. Mechanical grinding pretreatment: Use an 800# oilstone to thoroughly grind the ceramic parts of the waste etching equipment, completely removing surface protrusions and thick black deposits, ensuring that there are no obvious deposits or lumps on the surface of the parts after grinding.

[0035] 2. Prepare a 1:1 electronic grade sulfuric acid and hydrogen peroxide mixed cleaning solution.

[0036] 3. Immerse the ceramic parts in the cleaning solution and let them stand at room temperature for 15 minutes.

[0037] 4. Rinse with ultrapure water and dry at low temperature to complete the cleaning.

[0038] This embodiment is designed for ceramic parts with relatively thin deposits. It shortens the soaking time, ensures that the parts are clean enough after cleaning without damaging the substrate, and efficiently completes the cleaning operation.

[0039] Example 3

[0040] This embodiment provides a cleaning process for removing black deposits from ceramic components of semiconductor etching equipment, including the following steps:

[0041] 1. Use an 800# oilstone to evenly polish ceramic parts with heavy black stains on the surface to remove the thick layer of deposited impurities.

[0042] 2. Prepare a cleaning solution with a volume ratio of 1:1 of sulfuric acid and hydrogen peroxide.

[0043] 3. Immerse the ceramic parts completely for 30 minutes to fully decompose the stubborn, dense black deposits.

[0044] 4. Rinse and dry with ultrapure water.

[0045] This embodiment is designed for heavily soiled ceramic parts. By extending the soaking time, stubborn black deposits can be thoroughly removed, resulting in a complete cleaning effect while leaving the substrate intact.

[0046] Before and after cleaning comparison: Figure 1 The ceramic component to be cleaned (before cleaning) has obvious black deposits attached to its edge area. Figure 2 The black deposits on the surface of the ceramic component after cleaning using the process of this invention have been completely removed, the ceramic substrate is clean and undamaged, and the surface of the component has been restored to its original flatness.

[0047] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A cleaning method for removing black deposits from ceramic components of a semiconductor etching device, characterized in that, The specific steps are as follows: Step S1: Mechanical grinding pretreatment; Step S2: Chemical soaking and thorough washing; Prepare a cleaning solution with a volume ratio of 1:1 of sulfuric acid and hydrogen peroxide. Immerse the ceramic parts that have undergone mechanical grinding pretreatment in step S1 completely in the cleaning solution for 15-30 minutes. Utilize the synergistic effect of strong acid and strong oxidation of hydrogen peroxide to thoroughly decompose and peel off the dense black deposits remaining on the ceramic surface. Step S3: Cleaning treatment; After the chemical soaking and cleaning in step S2 is completed, the ceramic parts are removed and their surfaces are thoroughly rinsed with ultrapure water to remove residual cleaning solution and deposits. Then, they are dried to complete the cleaning process of the ceramic parts.

2. The cleaning method for removing black deposits from ceramic components of a semiconductor etching equipment according to claim 1, characterized in that: In step S1, the mechanical polishing pretreatment is as follows: Select an 800# oilstone and use manual grinding to uniformly polish the surface of the ceramic component to be cleaned in the semiconductor etching equipment, focusing on polishing the area covered with black deposits. Remove the loose, thick black deposits attached to the ceramic surface by mechanical polishing, while retaining the densely adhered residual deposit layer on the substrate surface.

3. The cleaning method for removing black deposits from ceramic components of a semiconductor etching equipment according to claim 2, characterized in that: In step S1, the 800# oilstone is a conventional silicon carbide oilstone. During the polishing process, it polishes at a uniform speed along the surface texture of the ceramic part, polishing all deposited areas without dead angles. After polishing, more than 80% of the thick black deposits are removed.

4. The cleaning method for removing black deposits from ceramic components of a semiconductor etching equipment according to claim 1, characterized in that: In step S2, the sulfuric acid used is electronic grade concentrated sulfuric acid, and the hydrogen peroxide is electronic grade hydrogen peroxide solution.

5. The cleaning method for removing black deposits from ceramic components of a semiconductor etching equipment according to claim 1, characterized in that: In step S2, the cleaning solution is kept still during the soaking process and no stirring is required.

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