A microelectronic component cutting blade

Abstract

This invention discloses a microelectronic component cutting blade and its manufacturing method, belonging to the field of precision cutting tool technology. Addressing the problem that existing cutting blades have stress concentration inflection points at the transition section and blade body connection, making them unsuitable for precision cutting of microelectronic components, this invention's blade includes a carbide blade substrate, a blade body disposed on the blade substrate, and a cutting edge disposed on the blade body. A gradient curvature transition structure is provided between the cutting edge and the blade body. The radius of curvature R1 of the blade tip region is 0.1μm to 0.5μm, and the radius of curvature of the connection region linearly increases from R1 to R2, satisfying 0.5μm < R2 ≤ 1.0μm. The cutting edge angle is 20° ± 0.5°, and the total length of the transition structure is 8μm to 12μm. The manufacturing method includes roughing, finishing, online laser detection closed-loop compensation, and sandblasting-type cutting edge passivation. This invention eliminates stress concentration inflection points through gradient curvature and, in conjunction with synergistic optimization of cutting edge parameters, achieves precision cutting of microelectronic components with dimensions of 0201 and below.

Description

Technical Field

[0001] This invention relates to the field of precision cutting tool technology, specifically to a cutting blade including a cutting body for cutting micro multilayer ceramic capacitors and semiconductor micro-components, and more particularly to a cemented carbide cutting blade with a gradient curvature transition structure and its manufacturing method. Background Technology

[0002] As consumer electronics, smart wearables, medical electronics, and automotive electronics move towards miniaturization and lightweighting, the size of microelectronic components continues to shrink. 0201-size (0.2mm × 0.1mm) multilayer ceramic capacitors (MLCCs) have become standard equipment in products such as smartphones, while 01005-size (0.1mm × 0.05mm) and even 008004-size micro-components are beginning to be used in high-end smart wearables and medical electronic devices. This places extremely stringent requirements on the precision, lifespan, and stability of cutting tools.

[0003] Currently, the blades used for cutting microelectronic components mainly include the following types.

[0004] Option 1 is a standard cutting insert with no curvature transition, where the cutting edge and body are directly formed without any curvature transition section. This option is simple to manufacture and inexpensive, suitable for cutting components of 0402 and larger sizes. However, when cutting components of 0201 and smaller sizes, stress concentration at the root of the cutting edge is severe, easily leading to micro-chipping. The tool life is typically only around 10,000 cycles, and the cut deviation rate is as high as about 5%.

[0005] Option two involves a cutting insert with a single fixed curvature transition section, where a circular arc transition section with a fixed radius of curvature (e.g., R=0.5μm) is set between the cutting edge and the cutting body. This option alleviates the stress concentration problem at the root of the cutting edge to some extent, increasing the tool life to approximately 11,500 cycles. However, this option still has a fundamental flaw: at the junction of the circular arc transition section and the cutting body, the curvature abruptly changes from a fixed value to infinity (i.e., a plane), forming a distinct inflection point. When the cutting impact load is transmitted along the curvature surface to this inflection point, it cannot continue to be evenly distributed, leading to a re-concentration of local stress, and this area becomes a new weak point.

[0006] In addition, Chinese invention patent application CN115697657A discloses a cutting blade made of superhard alloy, the outer surface of which is composed of a quadratic curve. Definition, by controlling the first point ( =1.00μm) and the second point ( The constant at ( =5.00μm) The ratio is used to optimize the cutting edge shape, and it is explicitly stated that the curve shape can be a composite R shape with multiple radii of curvature. This scheme implicitly realizes the change of the cutting edge curvature through a quadratic function, but the curvature change law is determined by the mathematical properties of the quadratic function, and it is impossible to independently and explicitly parameterize the gradient change of the radius of curvature. In actual manufacturing, it is difficult to accurately control the gradual distribution of the radius of curvature along the arc length.

[0007] Chinese invention patent CN202410038321.4 discloses an ultrathin passivated cutting tool for processing semiconductor materials, comprising a substrate, a first transition section, a second transition section, and a cutting edge connected in sequence. The cutting edge consists of a cutting body and a cutting edge connected to the cutting body, with the cutting edge forming a parabola connecting the two ends of the first transition line. This solution achieves load transfer between the substrate and the cutting edge through a two-segment fixed-radius arc combination of a concave arc transition section and a convex arc transition section. However, each transition segment is a single arc with a fixed radius of curvature (e.g., R1=5.5mm, R2=0.03mm), and abrupt curvature changes still exist at the junctions of the segments, making it difficult to fundamentally eliminate the inflection point effect of stress concentration.

[0008] Therefore, how to achieve a gradual change in the radius of curvature to eliminate stress concentration inflection points at the transition section, while adapting to the precision cutting requirements of microelectronic components of 0201 and below, is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0009] The present invention aims to solve the technical problems of stress concentration inflection points at the junction of the transition section and the blade body in existing cutting blades due to abrupt curvature changes, and the fact that the cutting edge geometry parameters are not optimized for microelectronic components, resulting in the inability to adapt to the precision cutting of microelectronic components with a size of 0201 and below.

[0010] To achieve the above objectives, the present invention adopts the following technical solution: A microelectronic component cutting blade includes a blade substrate and a cutting edge disposed on the blade substrate. The cutting edge has a cutting edge, and the blade substrate is formed of cemented carbide. A gradient variable curvature transition structure is provided between the cutting edge and the cutting edge. The gradient variable curvature transition structure includes a cutting tip region and a connecting region extending from the cutting tip region toward the cutting edge. The radius of curvature of the cutting tip region is R1, which is 0.1 μm to 0.5 μm. The radius of curvature of the connecting region increases linearly from R1 to R2, where R2 satisfies 0.5 μm < R2 ≤ 1.0 μm. The included angle of the cutting edge is 20° ± 0.5°, and the total length of the gradient variable curvature transition structure is 8 μm to 12 μm.

[0011] Furthermore, the cemented carbide is an ultrafine-grained cemented carbide, with a WC grain size of less than 0.5 μm.

[0012] Furthermore, the surface roughness Ra of the gradient curvature transition structure is no greater than 0.02 μm.

[0013] Preferably, the radius of curvature R1 of the cutting tip region is 0.1μm to 0.3μm, and the radius of curvature R2 of the connecting region is 0.5μm to 0.8μm, to adapt to the cutting of 0201 or 01005 specification multilayer ceramic capacitors.

[0014] Furthermore, an R-shaped transition structure is provided between the cutting body and the blade base.

[0015] A method for manufacturing cutting blades for the aforementioned microelectronic components includes: S1, rough machining: using a first diamond grinding wheel to rough machine the blade substrate, forming an initial contour of the cutting edge and a gradient curvature transition structure; S2, finish machining: using a second diamond grinding wheel with a diameter smaller than the first diamond grinding wheel to finish machine the initial contour, forming the final contour of the cutting edge and the gradient curvature transition structure; S3, online laser detection and closed-loop compensation: performing online laser detection on the curvature radius of the finished gradient curvature transition structure to obtain a measured curvature value; comparing the measured curvature value with the target curvature and calculating the deviation; when the deviation exceeds a preset threshold of ±0.05μm, adjusting the feed speed or cutting depth of the second diamond grinding wheel according to the magnitude and direction of the deviation until the curvature deviation returns to within the preset threshold.

[0016] Furthermore, in the S1 roughing process, the diameter of the first diamond grinding wheel is 0.5 mm, the rotation speed is 8000 rpm, the feed rate is 50 mm / min, and the cutting depth is 5 μm.

[0017] Furthermore, in the S2 finishing process, the diameter of the second diamond grinding wheel is 0.2 mm, the rotation speed is 12000 rpm, the feed rate is 20 mm / min, and the depth of cut is 1 μm.

[0018] Furthermore, after S3 online laser detection closed-loop compensation, it also includes: S4, sandblasting edge passivation: sandblasting edge passivation surface treatment.

[0019] Compared with the prior art, the present invention has the following beneficial effects: 1. By setting a gradient variable curvature transition structure, the radius of curvature R1 of the cutting tip region is 0.1μm to 0.5μm, and the radius of curvature of the connecting region increases linearly from R1 to R2 (0.5μm < R2 ≤ 1.0μm). This ensures that the cutting impact load is evenly distributed along the gradient surface, eliminating the abrupt curvature inflection point at the junction of the transition section and the cutting body in a single fixed curvature design. Compared to ordinary cutting edge inserts without curvature transition, tool life is increased by approximately 35%; compared to inserts with a single fixed curvature transition, tool life is further increased by approximately 17%.

[0020] 2. By optimizing the blade angle to 20°±0.5° and combining it with the total length of the gradient curvature transition structure from 8μm to 12μm, the synergistic optimization of the blade geometry and the gradient curvature structure was achieved. In the cutting of 0201 MLCCs, the perpendicularity of the component end face was improved by about 15%, and the skew defect rate was reduced from about 5% to about 0.6% (test conditions: cutting speed 120 times / minute, cutting pressure 0.5N, sample size 500 0201 MLCC components, cutting depth of 50% of component thickness).

[0021] 3. By employing a three-stage progressive machining method (roughing, finishing, and online laser detection closed-loop compensation), the surface roughness Ra of the gradient variable curvature transition structure is ensured to reach 0.02μm, and the curvature deviation is controlled within ±0.05μm, meeting the stringent requirements for blade surface quality in the precision cutting of microelectronic components.

[0022] 4. The insert uses ultra-fine grain cemented carbide as the matrix material, with WC grain size less than 0.5μm, which provides the insert with high hardness and excellent wear resistance, further extending the tool life.

[0023] 5. By setting an R-shaped transition structure between the blade body and the blade base, the transmission of cutting impact load from the blade body to the blade base is further dispersed, reducing stress concentration at the blade base connection. Attached Figure Description

[0024] Figure 1 A schematic diagram of the overall structure of a cutting blade for microelectronic components; Figure 2 This is a magnified cross-sectional view of a gradient curvature transition structure. Figure 3 A comparison diagram of a traditional single fixed curvature transition structure and the gradient variable curvature transition structure of the present invention; Figure 4 A comparison chart of the curvature radius versus arc length variation curves; Figure 5 This is a flowchart of a three-stage progressive manufacturing process.

[0025] List of reference numerals in the attached figures: 1—blade body; 2—cutting edge; 3—gradient variable curvature transition structure; 3a—cutting tip region; 3b—connection region; 4—blade body; 5—R-shaped arc transition structure; R1—radius of curvature of the cutting tip region; R2—radius of curvature of the end of the connection region; θ—cutting edge angle; L—total length of the gradient variable curvature transition structure; S1—roughing; S2—finishing; S3—online laser detection closed-loop compensation; S4—sandblasting-type cutting edge passivation. Detailed Implementation

[0026] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention. The embodiments are only used to explain the present invention and do not constitute a limitation on the scope of protection of the present invention.

[0027] like Figures 1 to 4 As shown, the microelectronic component cutting blade of the present invention includes a blade substrate 1, a cutting edge 4, and a cutting edge 2. The cutting edge 4 is disposed on the blade substrate 1, and an R-shaped transition structure 5 is provided between the cutting edge 4 and the blade substrate 1 to disperse the transmission of cutting impact load from the cutting edge 4 to the blade substrate 1. The cutting edge 2 is disposed on the cutting edge 4. The blade substrate 1 is formed of ultrafine-grained cemented carbide (WC-Co), with WC grain size less than 0.5 μm, providing the blade with high hardness and excellent wear resistance. The cutting edge 2 is used to directly contact and cut microelectronic components.

[0028] A gradient variable curvature transition structure 3 is provided between the cutting edge 2 and the cutting body 4. The gradient variable curvature transition structure 3 includes a cutting tip region 3a that directly contacts the workpiece and a connecting region 3b extending from the cutting tip region 3a towards the cutting body 4. The radius of curvature of the cutting tip region 3a is R1, and the value of R1 ranges from 0.1μm to 0.5μm. The radius of curvature of the connecting region 3b increases linearly from R1 to R2, where R2 satisfies 0.5μm < R2 ≤ 1.0μm. This curvature gradient allows the cutting impact load to be uniformly distributed along the gradient surface, eliminating the curvature abrupt change in inflection point at the junction of the transition section and the cutting body in a single fixed curvature design, fundamentally solving the stress concentration problem.

[0029] The total length L of the gradient curvature transition structure 3 is 8 μm to 12 μm. The included angle θ of the cutting edge 2 is 20° ± 0.5°. The preferred range of included angle θ, in conjunction with the total length L of the gradient curvature transition structure, enables the blade to meet the precision cutting requirements of 0201 size and smaller microelectronic components.

[0030] like Figure 2 As shown, the geometric parameters of the gradient variable curvature transition structure 3 can be determined in the following way: defining the arc length parameter starting from the tip of the blade. radius of curvature Let be a monotonically increasing function of arc length s, such that , In a preferred embodiment, It is a linear function, that is .

[0031] In one specific embodiment (Embodiment 1), the blade is used to cut 0201 specification MLCCs. The radius of curvature R1 of the tip region 3a is 0.3 μm, and the radius of curvature R2 of the connecting region 3b is 0.8 μm. The radius of curvature of the connecting region 3b changes linearly from R1 to R2. The cutting edge angle θ is 20°, and the total length L of the gradient curvature transition structure 3 is 10 μm. The blade substrate 1 is made of ultrafine-grained cemented carbide with a WC grain size of 0.3 μm. Testing showed that the blade in this embodiment has a cutting life of 13,500 cuts, a skew defect rate of less than 0.6%, and an improvement of approximately 15% in component end face perpendicularity compared to traditional blades.

[0032] In another specific embodiment (Embodiment 2), the blade is used to cut 01005 specification MLCCs. The radius of curvature R1 of the tip region 3a is 0.1 μm, and the radius of curvature R2 of the connecting region 3b is 0.5 μm, with the radius of curvature changing linearly from R1 to R2. The cutting edge angle θ is 19.5°, and the total length L of the gradient curvature transition structure 3 is 8 μm. Testing showed that the blade in this embodiment has a cutting life of 11,000 cuts, with the curvature deviation controlled within ±0.05 μm.

[0033] In another specific embodiment (Embodiment 3), the blade is used to cut semiconductor micro-components. The radius of curvature R1 of the tip region 3a is 0.5 μm, and the radius of curvature R2 of the connecting region 3b is 1.0 μm, with the radius of curvature changing linearly from R1 to R2. The blade edge angle θ is 20.5°, and the total length L of the gradient curvature transition structure 3 is 12 μm. Testing showed that the blade in this embodiment has a cutting life of 12,000 cuts.

[0034] The manufacturing method of this invention employs a three-stage progressive processing technology, such as... Figure 5As shown: S1, Roughing: The insert base 1 is roughed using a first diamond grinding wheel to form the initial contour of the cutting edge 2 and the gradient curvature transition structure 3. Preferably, the diameter of the first diamond grinding wheel is 0.5 mm, the rotation speed is 8000 rpm, the feed rate is 50 mm / min, and the depth of cut is 5 μm. S2, Finishing: The initial contour is finished using a second diamond grinding wheel with a diameter smaller than the first diamond grinding wheel to form the final contour of the cutting edge 2 and the gradient curvature transition structure 3. Preferably, the diameter of the second diamond grinding wheel is 0.2 mm, the rotation speed is 12000 rpm, the feed rate is 20 mm / min, and the depth of cut is 1 μm. S3, Online Laser Detection and Closed-Loop Compensation: The radius of curvature of the finished gradient curvature transition structure 3 is detected online using a laser. When the curvature deviation exceeds a preset threshold (±0.05 μm), closed-loop compensation correction is automatically triggered. The feedback mechanism for closed-loop compensation correction includes: comparing the measured curvature value obtained from online laser detection with the target curvature and calculating the deviation; automatically adjusting the feed speed or cutting depth of the second diamond grinding wheel according to the magnitude and direction of the deviation until the curvature deviation returns to within a preset threshold of ±0.05μm to ensure curvature accuracy. Closed-loop compensation correction stops when the curvature deviation from three consecutive online laser detections is within the preset threshold of ±0.05μm. S4, Sandblasting edge passivation: Sandblasting passivation surface treatment is applied to cutting edge 2. The sandblasting medium is alumina microparticles with a particle size of #5000 to #8000, the sandblasting pressure is 0.2MPa to 0.5MPa, and the processing time is 30s to 120s. Sandblasting edge passivation eliminates micro-defects that may occur during processing, further improving the consistency of the cutting edge.

[0035] The cutting life and skew defect rate tests of the above embodiments were conducted under the following conditions: cutting speed of 120 times / minute, cutting pressure of 0.5N, a test sample size of 500 MLCC components of corresponding specifications for each embodiment (0201 specification for Embodiment 1 and Embodiment 3, and 01005 specification for Embodiment 2), and a cutting depth of 50% of the component thickness. The online laser detection sampling frequency for curvature deviation was 10Hz.

[0036] Through the above three-level progressive processing and online laser detection closed-loop compensation, the surface roughness Ra of the gradient variable curvature transition structure 3 can reach 0.02μm, and the curvature deviation is controlled within ±0.05μm, which meets the stringent requirements of precision cutting of micro electronic components for the surface quality of the blade.

[0037] The following description, in conjunction with specific variations, further illustrates the possible implementations of the present invention.

[0038] As an unproven alternative, besides the linear gradient already experimentally verified in the embodiments of this invention, the curvature radius gradient of the connecting region 3b could theoretically also employ a gradient using continuously monotonically increasing functions such as exponential or quadratic functions. However, the effectiveness of these nonlinear gradient methods has not been experimentally verified in terms of cutting life and cutting deviation rate. If a nonlinear gradient method such as an exponential or quadratic function is used, then in the exponential function gradient method, the curvature radius function... This method results in a gentler curvature change in the region 3a near the cutting edge, better protecting the cutting edge; in the quadratic function gradual change method, the radius of curvature function... This method results in a smoother curvature change near the connection endpoint, which can further reduce the transition impact with the blade.

[0039] Regarding material replacement, in addition to WC-Co, the cemented carbide material for the blade substrate 1 can also be WC-TiC-Co cemented carbide or WC-TaC-Co cemented carbide. Among them, the addition of TiC in WC-TiC-Co cemented carbide can improve the blade's resistance to diffusion wear, making it suitable for cutting electronic components containing titanium; the addition of TaC in WC-TaC-Co cemented carbide can improve the blade's resistance to thermal shock, making it suitable for high-speed continuous cutting scenarios.

[0040] Regarding parameter range variations, the radius of curvature and the cutting edge angle can be adjusted accordingly for cutting electronic components of different sizes. For example, for a 008004-sized micro-component, R1 can be further reduced to 0.05μm to 0.1μm, R2 can be adjusted to 0.3μm to 0.5μm, the cutting edge angle θ can be adjusted to 18° to 19°, and the total length L of the gradient curvature transition structure can be adjusted to 6μm to 8μm.

[0041] Regarding the adjustment of the step sequence, the S4 sandblasting-type cutting edge passivation can be performed after S2 finishing and before S3 online laser inspection, depending on the characteristics of the cutting edge material. Alternatively, two passivation processes can be performed simultaneously: a pre-passivation after S2 to eliminate finishing burrs, and a final passivation after S3 closed-loop compensation correction to ensure cutting edge consistency.

[0042] Regarding the deformation of the connection relationship, the blade base 1 and the cutting edge 2 can be an integrally formed structure or a separate connection structure—the blade base 1 and the cutting edge preforms are manufactured separately first, and then the two are fixed together by welding or mechanical connection. The separate structure allows the cutting edge 2 to be made of a different material than the blade base 1. For example, the cutting edge 2 can be made of cemented carbide with finer grains to improve local hardness and wear resistance.

[0043] The above-described specific embodiments are merely preferred embodiments of the present invention and are not intended to limit the present invention.

Claims

1. A microelectronic component cutting blade, comprising: The blade substrate is formed of cemented carbide. The blade body is disposed on the blade base; The cutting edge is provided on the blade body; A gradient variable curvature transition structure is disposed between the cutting edge and the cutting body. The gradient variable curvature transition structure includes a cutting tip region and a connecting region extending from the cutting tip region toward the cutting body. Wherein, the radius of curvature of the tip region is R1, which is 0.1μm to 0.5μm, and the radius of curvature of the connecting region increases linearly from R1 to R2, where R2 satisfies 0.5μm < R2 ≤ 1.0μm; The included angle of the cutting edge is 20°±0.5°, and the total length of the gradient variable curvature transition structure is 8μm to 12μm.

2. The microelectronic component cutting blade according to claim 1, characterized in that, The cemented carbide is an ultrafine-grained cemented carbide with a WC grain size of less than 0.5 μm.

3. The microelectronic component cutting blade according to claim 1, characterized in that, The surface roughness Ra of the gradient curvature transition structure is no greater than 0.02 μm.

4. The microelectronic component cutting blade according to claim 1, characterized in that, The radius of curvature R1 of the cutting tip region is 0.1μm to 0.3μm, and the radius of curvature R2 of the connecting region is 0.5μm to 0.8μm, to adapt to the cutting of 0201 or 01005 specification multilayer ceramic capacitors.

5. The microelectronic component cutting blade according to claim 1, characterized in that, An R-shaped transition structure is provided between the blade body and the blade base.

6. A method for manufacturing the microelectronic component cutting blade of claim 1, comprising: S1. Rough machining: The first diamond grinding wheel is used to rough machine the insert base to form the initial contour of the cutting edge and gradient curvature transition structure; S2. Finishing: The initial contour is finished using a second diamond wheel with a diameter smaller than the first diamond wheel to form the final contour of the cutting edge and the gradient curvature transition structure. S3. Online laser detection closed-loop compensation: The radius of curvature of the finished gradient curvature transition structure is detected online by laser to obtain the measured curvature value; the measured curvature value is compared with the target curvature and the deviation is calculated; when the deviation exceeds a preset threshold of ±0.05μm, the feed speed of the second diamond grinding wheel is adjusted according to the magnitude and direction of the deviation until the curvature deviation returns to within the preset threshold.

7. The manufacturing method according to claim 6, characterized in that, In the S1 roughing process, the diameter of the first diamond grinding wheel is 0.5 mm, the rotation speed is 8000 rpm, the feed rate is 50 mm / min, and the cutting depth is 5 μm.

8. The manufacturing method according to claim 6, characterized in that, In the S2 finishing process, the diameter of the second diamond grinding wheel is 0.2 mm, the rotation speed is 12000 rpm, the feed rate is 20 mm / min, and the cutting depth is 1 μm.

9. The manufacturing method according to claim 6, characterized in that, Following the S3 online laser detection closed-loop compensation, the following is also included: S4. Sandblasting edge passivation: The cutting edge is subjected to sandblasting edge passivation surface treatment.

10. The manufacturing method according to claim 6, characterized in that, In step S3, the cutting depth of the second diamond grinding wheel is adjusted according to the magnitude and direction of the deviation, instead of adjusting the feed rate.

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