Supramolecular polymer materials, composite films and their applications in dielectric materials

Abstract

This invention proposes supramolecular polymer materials, composite films, and their applications in dielectric materials. The supramolecular polymer material is prepared by combining polyimide with 5-25% by mass of thiocyanate aromatic polyurea, wherein the thiocyanate aromatic polyurea is selected from at least one of polyphenylthiourea, polyphenylselenourea, and polyphenyltellurium. The supramolecular polymer material is obtained by assembling and bonding thiocyanate aromatic polyurea with polyimide. It possesses significantly superior dielectric properties such as dielectric constant, breakdown field strength, and energy storage density, and can significantly improve flame retardancy. Even after direct exposure to open flame, it can still maintain significant energy storage performance, combining high energy storage density, thermal stability, and intrinsic safety. It provides an important material source for the fabrication of next-generation electronic devices and has significant application prospects.

Description

Technical Field

[0001] This invention relates to the field of polymer dielectric materials, specifically supramolecular polymer materials, composite films, and their applications in dielectric materials. Background Technology

[0002] Dielectric capacitors are core components in advanced electronic and electrical systems, enabling energy storage and pulsed power output. With the continuous growth in electrification demands in transportation and aerospace, there is an urgent need for dielectric materials that can operate stably above 150 °C. The operating temperature of commercial polymer dielectrics (such as biaxially oriented polypropylene, BOPP) is limited to below 100 °C, which has driven research into high-temperature alternatives such as polyimide (PI). While PI possesses excellent intrinsic thermal stability, its high-temperature performance is severely limited by a sharp increase in conduction losses, leading to low charge / discharge efficiency. η ) and energy storage density ( U d (It dropped rapidly.)

[0003] To address these issues, researchers have explored strategies such as crosslinking, inorganic filling, and side-chain modification. However, these methods often come at the cost of sacrificing the material's processability, flexibility, or dielectric properties. Furthermore, the planar conjugated backbone of PI easily leads to the delocalization of π electrons, which is the fundamental reason for its high conductivity current under thermo-electric coupling. Our previous work employed a hydrogen-bonded supramolecular strategy to distort the PI backbone, successfully decoupling the dielectric constant from the breakdown strength and obtaining a supramolecular polymer with high energy density. However, the thermal stability of hydrogen bonds inherently limits its application under more extreme conditions.

[0004] Developing polymer dielectrics that can operate stably under extreme conditions and possess high energy density, thermal stability, and intrinsic safety remains a key challenge for next-generation electronic devices. Summary of the Invention

[0005] The purpose of this invention is to propose supramolecular polymer materials for use in dielectric materials to meet the performance requirements of high energy density, thermal stability and intrinsic safety.

[0006] The technical solution of this invention is implemented as follows: The first aspect of the present invention is to provide a supramolecular polymer material prepared by polyimide and 5-25% by mass of thiocyanate aromatic polyurea, wherein the thiocyanate aromatic polyurea is selected from at least one of polyphenylthiourea, polyphenylselenourea, and polyphenyltellurium. The structural formula of the polyimide is: ; The polyphenylthiourea, polyphenylselenourea, and polyphenyltellurium respectively have structural formulas of Formula I, Formula II, and Formula III: , , .

[0007] Further, the mass percentage of the thioaromatic polyurea is 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24% or 25%.

[0008] Furthermore, the mass percentage of the thiocyanate aromatic polyurea is 10-20%.

[0009] Preferably, the thiocyanate aromatic polyurea is polyphenylthiourea, accounting for 15% by mass.

[0010] Furthermore, the thiocyanate aromatic polyurea is obtained by polymerizing m-phenylenediamine with thiocyanate-substituted diphenyl carbonate.

[0011] Furthermore, the polymerization process is carried out under vacuum conditions and at a temperature of 90-120 °C.

[0012] A second aspect of the invention is to provide a composite film obtained by casting from the supramolecular polymer material described in the first aspect.

[0013] Furthermore, the composite film is prepared by coating a supramolecular polymer material solution onto a substrate, heating to remove the solvent, curing, annealing, and then peeling off the substrate to obtain the composite film.

[0014] A third aspect of the invention is to provide the use of the supramolecular polymer material described in the first aspect or the composite film described in the second aspect in dielectric materials.

[0015] A fourth aspect of the present invention is to provide a dielectric capacitor comprising a dielectric film; said dielectric film being a composite film as described in the second aspect, or made of a supramolecular dielectric polymer material as described in the first aspect.

[0016] Furthermore, the thickness of the dielectric film is 5-10 μm.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention obtains a supramolecular polymer material by assembling and bonding thiocyanate aromatic polyurea and polyamide. It has significantly superior dielectric properties such as dielectric constant, breakdown field strength and energy storage density, and can significantly improve flame retardancy. Even after direct exposure to open flame, it can still maintain significant energy storage performance. It has high energy storage density, thermal stability and intrinsic safety, providing an important material source for the fabrication of next-generation electronic devices and has significant application prospects. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a gel permeation chromatography (GPC) chromatogram of polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU) prepared in Example 1 of the present invention.

[0020] Figure 2 The Fourier transform infrared (FT-IR) spectra of polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU) prepared in Example 1 of this invention are shown.

[0021] Figure 3 The images show the nuclear magnetic resonance (NMR) spectra of polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU) prepared in Example 1 of this invention.

[0022] Figure 4 These are physical images of different composite films in the stretched and rolled states in Embodiment 2 of the present invention.

[0023] Figure 5 The images show the FT-IR spectra of different composite films in Example 2 of this invention.

[0024] Figure 6 The results show the cycle durability and stability test results of different composite films in Example 3 of the present invention. Detailed Implementation

[0025] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0026] This invention provides a supramolecular polymer material prepared from polyimide and thiocyanate aromatic polyurea, wherein the thiocyanate aromatic polyurea is selected from at least one of polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU); The structural formula of the polyimide is: ; The polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU) have structural formulas of Formula I, Formula II, and Formula III, respectively: , , .

[0027] The supramolecular polymer material utilizes chalcogenides as superior supramolecular building blocks. Chalcogenides originate from the interactions of electron-deficient regions (σ-holes) on sulfur, selenium, and tellurium atoms, exhibiting high directionality and strength comparable to or even exceeding that of hydrogen bonds. Introducing chalcogenides into the PI-based supramolecular structure not only enhances intermolecular stacking and charge-blocking capabilities but also endows the material with crucial flame-retardant auxiliary functions. By introducing chalcogen aromatic polyureas into PI-based supramolecular structures, the dielectric constant, breakdown field strength, and energy storage density of the supramolecular structure can be significantly improved, along with its flame-retardant properties. Even after direct exposure to open flame, it maintains significant energy storage performance, combining high energy storage density, thermal stability, and intrinsic safety, providing an important material source for the fabrication of next-generation electronic devices.

[0028] In a preferred embodiment, the thiocyanate aromatic polyurea in the supramolecular polymer material comprises 5-25% by mass, more preferably 10-20%, exhibiting higher dielectric constant, energy storage density, and breakdown field strength, as well as flame retardant properties. Specifically, it satisfies a dielectric constant greater than 6.0, a breakdown field strength greater than 600 MV / m, and a high-temperature energy storage density (250 °C) greater than 2.0 J / cm³. 3 Performance metrics.

[0029] In the aforementioned supramolecular polymer materials, under the premise of adding the same mass percentage, the contribution of the chalcogenide aromatic polyurea to dielectric properties such as dielectric constant, breakdown field strength, leakage current, and energy storage density, as well as flame retardant properties, is in the following order: polyphenylthiourea (S-PU) > polyphenylselenourea (Se-PU) > polyphenyltellurium urea (Te-PU). Those skilled in the art can select one or more chalcogenide aromatic polyureas and adapt them to different proportions to meet actual performance requirements. For example, it is preferable to add 10-20 w% of polyphenylthiourea (S-PU), 10-15 w% of polyphenylselenourea (Se-PU), and 15 w% of polyphenyltellurium urea (Te-PU) to achieve a dielectric constant greater than 6.0, a breakdown field strength greater than 600 MV / m, and a high-temperature energy storage density (250 ℃) greater than 2.0 J / cm². 3 It can be used in new energy vehicles, aerospace and capacitor energy storage.

[0030] In a more preferred embodiment, the supramolecular polymer material is composed of polyimide and polyphenylthiourea of ​​Formula I, with a mass ratio of 15%. This enables the supramolecular material to exhibit groundbreaking comprehensive performance: achieving breakthrough high energy storage density and breakdown field strength at 250 °C, a dielectric constant of 7.8, a dielectric loss of less than 0.0022, and a breakdown field strength of 500 MV / m, while also possessing excellent flame retardancy (limiting oxygen index (LOI): 45.7%). It can be used to develop next-generation dielectric materials that combine ultra-high energy storage density, high-temperature reliability, and intrinsic safety to meet the most demanding application requirements.

[0031] Notably, this material exhibits unprecedented post-fire stability, maintaining significant energy storage performance even after direct exposure to open flame. By replacing the chalcogen elements from the S system with Se and Te, this invention verifies the core role of chalcogen bonds. This invention opens up a new direction for the cross-integration of deep learning and supramolecular chemistry, providing new ideas for creating safe and high-performance polymer dielectrics for extremely demanding energy storage applications.

[0032] In a preferred embodiment, the thiocyanate aromatic polyurea is obtained by polymerizing m-phenylenediamine with thiocyanate-substituted diphenyl carbonate, and the specific preparation route is shown below.

[0033] ; When the substituent X is S, Se or Te, the resulting thiocyanate aromatic polyurea are polyphenylthiourea (S-PU) as shown in Formula I, polyphenylselenourea (Se-PU) as shown in Formula II, and polyphenyltellurium (Te-PU) as shown in Formula III.

[0034] This invention also provides a composite film, which is prepared by coating a substrate with the aforementioned supramolecular polymer material solution, removing the solvent by heating, curing, annealing, and then peeling off the substrate. This composite film exhibits good toughness and is suitable for preparing dielectric capacitors, satisfying numerous performance requirements such as high energy density, thermal stability, and safety.

[0035] In a preferred embodiment, the thickness of the composite film is 5-10 μm, preferably 5-8 μm.

[0036] The following are preferred embodiments of the present invention, which verify the technical solution of the present invention. Unless otherwise specified, the reagents used are commercially available in the art, and the experimental methods used are techniques well-known to those skilled in the art.

[0037] Example 1: Preparation and Characterization of Thio Aromatic Polyurea

[0038] 1) Polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium urea (Te-PU) are respectively obtained by polymerizing diphenyl thiocarbonate, diphenyl selenocarbonate, and diphenyl tellurate with m-phenylenediamine in N,N-dimethylformamide solvent under vacuum of 0.5 mmHg and at 100 °C for 10 h, followed by post-treatment.

[0039] Of these, diphenyl thiocarbonate was a commercially available reagent, while diphenyl selenocarbonate and diphenyl tellurate were prepared in the laboratory. The specific preparation steps were as follows: a) Selenium powder / tellurium powder (Se / Te) and sodium borohydride (NaBH4) were reacted in ethanol to generate NaHSe / NaHTe; b) Phenyl chloroformate (PhOCOCl) was added dropwise to the NaHSe / NaHTe solution, and a nucleophilic substitution reaction was carried out to generate diphenyl selenocarbonate / diphenyl tellurate (PhO-C(=X)-OPh, X=Se / Te).

[0040] 2) Structural characterization

[0041] The polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU) prepared above were analyzed by gel permeation chromatography (GPC), Fourier transform infrared spectroscopy (FT-IR), and nuclear magnetic resonance spectroscopy (NMR), respectively. The results are shown below. Figure 1 , Figure 2 and Figure 3 As shown.

[0042] Figure 1 In the figure, figure a is the gel permeation chromatogram of polyphenylthiourea (S-PU), figure b is the gel permeation chromatogram of polyphenylselenourea (Se-PU), and figure c is the gel permeation chromatogram of polyphenyltellurium (Te-PU).

[0043] Figure 2 In the figure, figure a is the FT-IR spectrum of polyphenylthiourea (S-PU), figure b is the FT-IR spectrum of polyphenylselenourea (Se-PU), and figure c is the FT-IR spectrum of polyphenyltellurium (Te-PU).

[0044] Figure 3 In the middle, figure a shows polyphenylthiourea (S-PU). 1 H NMR spectrum (left) 13 Figure b shows the C10 NMR spectrum (right), and Figure c shows polyphenyl selenourea (Se-PU). 1 H NMR spectrum (left) 13 C10 NMR spectrum (right), C10 NMR spectrum is polyphenyl telluride (Te-PU). 1 H NMR spectrum (left) 13 C NMR spectrum (right).

[0045] The above characterization results fully verify the successful preparation of polyphenylthiourea (S-PU), polyphenylselenourea (Se-PU), and polyphenyltellurium (Te-PU).

[0046] Example 2: Preparation and Characterization of Composite Thin Films

[0047] 1) Preparation of composite films

[0048] A 0.2 wt% polyimide (PI, purchased from Aladdin) solution, and 0.2 wt% S-PU, Se-PU, and Te-PU solutions were prepared, all in DMF. The solutions were rotated on a turntable for 12 hours to ensure complete dissolution. Then, the 0.2 wt% PI solution was mixed with each of the S-PU, Se-PU, and Te-PU solutions separately to prepare mixed solutions of different proportions, such as PI / S-PU 5% (PI:S-PU mass ratio of 95:5). Films with different mass fractions were cast onto a glass plate using a casting method. The glass plate was placed in an oven and heated at 70 °C for 12 hours to remove the solvent, then heated at 100 °C for 12 hours to cure the film, and finally annealed at 120 °C for 24 hours to obtain composite films of different mass fractions of PI / S-PU, PI / Se-PU, and PI / Te-PU. The thickness of the obtained films ranged from 5 to 8 μm. The resulting composite film (7 × 5 cm) was... 2 )like Figure 4 As shown.

[0049] Figure 4 Figure a shows the stretched state, and Figure b shows the curled state. It is clear that the composite film has good toughness.

[0050] 2) Characterization of composite thin films

[0051] Using FT-IR spectroscopy, we quantitatively characterized the formation and strength of chalcogenide bonds. For example... Figure 5 As shown, the characteristic carbonyl (C=O) stretching vibration peak of the imide group in pure PI is located at 1675 cm⁻¹. -1 After the composite film is formed, the peak shifts significantly to lower wavenumbers: PI / Te-PU shifts to 1650 cm⁻¹. -1 PI / Se-PU moved to 1638 cm -1 PI / S-PU moved to 1620 cm -1 This redshift is a direct indication of the redistribution of electron density caused by the interaction of C=O bonds with chalcogen atoms (S, Se, Te). The magnitude of the shift follows the order PI / S-PU > PI / Se-PU > PI / Te-PU, providing clear spectroscopic evidence for the intensity gradient of chalcogen bonds, with the S...O bonds being the strongest.

[0052] Example 3: Verification of Dielectric and Thermal Properties

[0053] Composite films were prepared by mixing PI solution with S-PU solution, Se-PU solution and Te-PU solution in different mass ratios and following the method in Example 2. The dielectric and thermal properties of each film were then tested.

[0054] 1) The specific proportions and properties of the dielectric are shown in Table 1-3.

[0055] Table 1. Dielectric properties of PI / S-PU films with different ratios at 25℃ and 1 kHz

[0056] Table 2. Dielectric properties of PI / Se-PU films with different ratios at 25℃ and 1 kHz

[0057] Table 3. Dielectric properties of PI / Te-PU films with different ratios at 25℃ and 1 kHz

[0058] As shown in Tables 1-3, the PI / S-PU composite film significantly improved the dielectric constant while maintaining low dielectric loss. Notably, at room temperature and 1 kHz, in the composition ratio of the PI and S-PU blend film, with increasing S-PU addition, the dielectric constant and breakdown field strength of the PI / S-PU gradually increased, while the dielectric loss gradually decreased. When the S-PU addition was the optimal 15 wt%, the dielectric constant of the composite material was [value missing]. K It reached 8.0, with a dielectric loss of only 0.0019; while pure PI... KFor 3.3, pure S-PU K The K value was 4.3. Further increasing the S-PU content led to a gradual decrease in the K value, possibly because excessive aggregation disrupted the continuity of the supramolecular network. The improvement in dielectric properties followed a clear trend dominated by the strength of chalcogen bonds: at the same 15 wt% addition, the maximum dielectric strength of the PI / Se-PU and PI / Te-PU composites was [missing value]. K The values ​​are approximately 7.2 and 6.5, respectively. This dielectric constant gradient (PI / S-PU > PI / Se-PU > PI / Te-PU) is directly related to the strength of the directional chalcogen-oxygen interaction.

[0059] Furthermore, Weber breakdown analysis results show that the PI / S-PU composite film containing 15 wt% S-PU has a breakdown field strength ( E b The S-PU addition reached 877 MV / m, significantly higher than the 425 MV / m of pure PI. This trend is consistent with the dielectric constant; both properties peaked at 15 wt% S-PU addition and subsequently decreased with increasing content, indicating an optimal balance between introducing polarizable / charge-blocking units and maintaining structural uniformity. The universality of the chalcogenide strategy was validated in a series of materials: the Eb values ​​exhibited a clear gradient (PI / S-PU 877 MV / m > PI / Se-PU 778 MV / m > PI / Te-PU 676 MV / m), precisely corresponding to the decreasing S...O interaction strength and the diminishing increase in dielectric constant. This parallel relationship confirms that strongly oriented chalcogenides are the core mechanism for simultaneously breaking the inherent trade-off between high polarizability and high insulation in polymer dielectrics.

[0060] 2) High-temperature energy storage performance

[0061] The dielectric properties of different composite films were measured at 200 ℃ and 250 ℃, and the results are shown in Table 4-5.

[0062] Table 4. Dielectric properties of different composite films at 200 °C

[0063] Table 5. Dielectric properties of different composite films at 250 °C

[0064] Based on its excellent dielectric insulation and thermal management capabilities, the optimal PI / S-PU (15 wt%) composite film exhibits superior energy storage performance at high temperatures. At 250℃, the efficiency (…) η When the energy storage density is 90%, its energy storage density is ( U dThe energy density reached 7.90 J / cm³, which is significantly better than pure PI, PI / Se-PU (4.44 J / cm³), and PI / Te-PU (1.32 J / cm³) composite films under the same conditions, directly reflecting the crucial role of chalcogen bond strength in high-temperature stability. Compared with the most advanced polymer dielectrics reported in the literature at 250 °C, the PI / S-PU composite material is one of the best systems in terms of overall energy density and efficiency, making it a leading candidate material for extreme condition applications. Through rigorous testing, we further confirmed the practical reliability of this performance: the composite material exhibits excellent cycle durability at 250 °C and an electric field of 200 MV / m, after 10... 5 After one charge-discharge cycle, it can still maintain a stable value of 1.57 J / cm³. U d With more than 90% η ( Figure 6 a). The local stability of the composite film is well maintained. Figure 6 b).

[0065] 3) Flame retardant properties

[0066] The flame retardant properties of the composite films were evaluated using the limiting oxygen index (LOI), and the results of the flame retardant properties of different composite films are shown in Table 6.

[0067] Table 6. Flame retardant properties and energy storage density after vertical combustion of the composite film

[0068] As shown in Table 6, the introduction of S-PU, Se-PU, and Te-PU significantly improved the LOI value of PI. The peak value of the PI / S-PU composite material containing 15 wt% S-PU reached 45.7%, which is much higher than the 36.3% of pure PI. Furthermore, a clear trend was observed: PI / S-PU (45.7%) > PI / Se-PU (41.6%) > PI / Te-PU (39.4%), and vertical combustion achieved a V-0 rating, which is consistent with the effectiveness of different elements in promoting char formation.

[0069] Notably, the PI / S-PU composite material exhibited excellent fire resistance, maintaining its functional dielectric properties even after direct exposure to open flame. After 3 seconds of direct exposure to open flame followed by cooling, we tested the PI / S-PU film at 250°C: the energy storage density after combustion (…). UdAt this temperature, the energy density remains as high as 4.82 J / cm³, with an efficiency exceeding 90%. In stark contrast, pure PI and PI / Te-PU composites experienced catastrophic dielectric failure after combustion. This superior resilience is attributed to the formation of a coherent sulfonated carbon layer during combustion, which acts as a protective barrier, maintaining the structural and functional integrity of the underlying material. This highlights the unique combination of high energy density, excellent high-temperature stability, outstanding flame retardancy, and post-fire dielectric reliability in PI / S-PU composites—a combination of properties extremely rare among polymer dielectric materials.

[0070] In summary, the high-temperature energy storage performance of dielectric polymers can be improved by adjusting their dielectric constant, dielectric loss, and breakdown field strength. By adjusting different ratios of PI and PU, the dielectric constant, breakdown field strength, and energy density can be further increased, allowing for the fabrication of large-area, high-quality films with uniform dielectric and capacitive properties. When the dielectric constant is greater than 6.0, the breakdown field strength is greater than 600 MV / m, and the high-temperature energy density (250 ℃) is greater than 2.0 J / cm². 3 This invention holds significant scientific importance and practical application value in the fields of new energy vehicles, aerospace, and capacitor energy storage. Simultaneously, the composite film exhibits excellent flame retardancy, with a limiting oxygen index exceeding 45%. Furthermore, the materials and preparation method provided by this invention possess high versatility. Due to the readily available raw materials and simple film processing, this all-organic composite strategy is crucial for its successful commercialization and practical application in high-temperature electronics and energy storage devices.

[0071] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A supramolecular polymer material, characterized in that, It is prepared by polyimide and 5-25% by mass of thiocyanate aromatic polyurea, wherein the thiocyanate aromatic polyurea is selected from at least one of polyphenylthiourea, polyphenylselenourea, and polyphenyltellurium. The structural formula of the polyimide is: ； The polyphenylthiourea, polyphenylselenourea, and polyphenyltellurium respectively have structural formulas of Formula I, Formula II, and Formula III: 、 、 。 2. The supramolecular polymer material as described in claim 1, characterized in that, The mass percentage of the thiocyanate aromatic polyurea is 10-20%.

3. The supramolecular polymer material as described in claim 1, characterized in that, The thiocyanate aromatic polyurea is polyphenylthiourea, accounting for 15% by mass.

4. The supramolecular polymer material as described in claim 1, characterized in that, The thiocyanate aromatic polyurea is obtained by polymerizing m-phenylenediamine with thiocyanate-substituted diphenyl carbonate.

5. The supramolecular polymer material as described in claim 4, characterized in that, The polymerization process is carried out under vacuum conditions and at a temperature of 90-120°C.

6. A composite film, characterized in that, It is obtained by casting from the supramolecular polymer material described in any one of claims 1-5.

7. The composite film as described in claim 6, characterized in that, The composite film is prepared by coating a supramolecular polymer material solution onto a substrate, heating to remove the solvent, curing, annealing, and then peeling off the substrate to obtain the composite film.

8. The use of the supramolecular polymer material according to any one of claims 1-5 or the composite film according to claim 6 or 7 in dielectric materials.

9. A dielectric capacitor, characterized in that, Includes a dielectric thin film; the dielectric thin film is the composite thin film of claim 6 or 7, or is made from the supramolecular dielectric polymer material of any one of claims 1-5.

10. The dielectric capacitor as claimed in claim 9, characterized in that, The thickness of the dielectric film is 5-10 μm.

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